Samsung electronics co., ltd. (20240161790). MEMORY DEVICE INCLUDING PAGE BUFFER CIRCUIT simplified abstract
Contents
- 1 MEMORY DEVICE INCLUDING PAGE BUFFER CIRCUIT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE INCLUDING PAGE BUFFER CIRCUIT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE INCLUDING PAGE BUFFER CIRCUIT
Organization Name
Inventor(s)
Daeseok Byeon of Suwon-si (KR)
MEMORY DEVICE INCLUDING PAGE BUFFER CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240161790 titled 'MEMORY DEVICE INCLUDING PAGE BUFFER CIRCUIT
Simplified Explanation
The memory device described in the abstract includes a memory cell array with multiple memory cells and a page buffer circuit with multiple page buffer units connected to the memory cells through bit lines. Each page buffer unit is connected to a sensing node, and auxiliary wires near the sensing node help reduce coupling problems caused by the low capacitance of the sensing node.
- The memory device includes a memory cell array and a page buffer circuit with multiple page buffer units.
- Each page buffer unit is connected to a sensing node to improve performance.
- Auxiliary wires near the sensing node help reduce coupling problems caused by the low capacitance of the sensing node.
Potential Applications
The technology described in the patent application could be applied in:
- Solid-state drives
- Embedded systems
- Mobile devices
Problems Solved
This technology helps address issues related to coupling problems caused by the low capacitance of sensing nodes in memory devices.
Benefits
The benefits of this technology include:
- Improved memory device performance
- Enhanced reliability
- Reduced interference
Potential Commercial Applications
The potential commercial applications of this technology could include:
- Memory device manufacturing companies
- Electronics manufacturers
- Data storage companies
Possible Prior Art
One possible prior art related to this technology could be the use of auxiliary wires to reduce coupling problems in memory devices.
Unanswered Questions
1. How does the use of auxiliary wires impact the overall cost of manufacturing memory devices? 2. Are there any potential limitations or drawbacks to using auxiliary wires in memory devices for reducing coupling problems?
Original Abstract Submitted
a memory device includes a memory cell array including a plurality of memory cells, and a page buffer circuit including a plurality of page buffer units respectively connected with the memory cells through a plurality of bit lines. a sensing node is connected to a bit line for each buffer circuit. the plurality of page buffer units are respectively connected with sensing nodes, each of the plurality of page buffer units includes at least one transistor. one or more auxiliary wires in the proximity of the sensing node are used to reduce coupling problems caused by a low capacitance of the sensing node.
