Samsung electronics co., ltd. (20240160732). MEMORY DEVICE, OPERATING METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM simplified abstract

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MEMORY DEVICE, OPERATING METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM

Organization Name

samsung electronics co., ltd.

Inventor(s)

Youngjae Park of Suwon-si (KR)

Seungki Hong of Suwon-si (KR)

Hyunbo Kim of Suwon-si (KR)

Insu Choi of Suwon-si (KR)

MEMORY DEVICE, OPERATING METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240160732 titled 'MEMORY DEVICE, OPERATING METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM

Simplified Explanation

The memory device described in the abstract includes a memory cell array with multiple memory cell rows grouped into segments, a row decoder connected to the memory cell rows, and a refresh control circuit that generates a refresh control signal for managing a refresh operation on the memory cell rows.

  • Memory device with memory cell array grouped into segments
  • Row decoder connected to memory cell rows
  • Refresh control circuit for refresh operation control

Potential Applications

The technology described in this patent application could be applied in:

  • Computer memory systems
  • Mobile devices
  • Embedded systems

Problems Solved

This technology helps in:

  • Improving memory performance
  • Enhancing memory reliability
  • Extending memory lifespan

Benefits

The benefits of this technology include:

  • Efficient memory management
  • Enhanced data retention
  • Increased system stability

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Memory chip manufacturing
  • Electronic devices production
  • Data storage solutions

Possible Prior Art

One possible prior art related to this technology is the use of row decoders in memory devices to access specific memory cell rows efficiently.

Unanswered Questions

How does the refresh control circuit determine the timing and frequency of the refresh operation?

The abstract does not provide details on how the refresh control circuit calculates the optimal timing and frequency for the refresh operation.

What specific types of memory cells are used in the memory cell array?

The abstract does not mention the specific types of memory cells utilized in the memory cell array.


Original Abstract Submitted

provided is a memory device including a memory cell array including a plurality of memory cell rows, the plurality of memory cell rows being grouped into a plurality of segments, a row decoder connected to the plurality of memory cell rows, and a refresh control circuit configured to generate a refresh control signal for controlling a refresh operation on the plurality of memory cell rows.