Samsung electronics co., ltd. (20240157472). WAFER PROCESSING APPARATUS AND WAFER DICING METHOD simplified abstract

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WAFER PROCESSING APPARATUS AND WAFER DICING METHOD

Organization Name

samsung electronics co., ltd.

Inventor(s)

Youngchul Kwon of Suwon-si (KR)

Goonwoo Kim of Suwon-si (KR)

WAFER PROCESSING APPARATUS AND WAFER DICING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240157472 titled 'WAFER PROCESSING APPARATUS AND WAFER DICING METHOD

Simplified Explanation

The wafer processing apparatus described in the patent application utilizes a laser source to generate a laser beam with specific parameters, a wafer support to hold the wafer in place, and a beam transmission optical system to transfer the laser beam to the wafer. The laser beam is designed to be collected inside the wafer through a self-condensing phenomenon as it moves along the inside of the wafer.

  • Laser source generates laser beam with specific parameters
  • Wafer support holds wafer in place
  • Beam transmission optical system transfers laser beam to wafer
  • Laser beam collected inside wafer through self-condensing phenomenon

Potential Applications

The technology could be applied in the semiconductor industry for wafer processing, such as cutting, drilling, or marking.

Problems Solved

This technology allows for more precise and efficient processing of wafers compared to traditional methods.

Benefits

- Higher precision in wafer processing - Increased efficiency in manufacturing processes - Reduced material waste

Potential Commercial Applications

"Advanced Laser Wafer Processing Technology for Semiconductor Industry"

Possible Prior Art

There may be prior art related to laser processing of wafers in the semiconductor industry, but specific examples are not provided in the patent application.

Unanswered Questions

How does the self-condensing phenomenon work inside the wafer?

The patent application does not provide detailed information on the mechanism behind the self-condensing phenomenon.

What are the specific parameters set by the laser source for optimal performance?

The patent application mentions that the laser source sets parameters for the laser beam, but does not specify what these parameters are.


Original Abstract Submitted

provided is a wafer processing apparatus including a laser source for generating a laser beam including a plurality of pulses, a wafer support configured to support a wafer, and a beam transmission optical system for transferring the laser beam output from the laser source to the wafer, wherein the laser source sets parameters of the laser beam so that the laser beam is collected inside the wafer by a self-condensing phenomenon while moving along the inside of the wafer.