Samsung electronics co., ltd. (20240157472). WAFER PROCESSING APPARATUS AND WAFER DICING METHOD simplified abstract
Contents
- 1 WAFER PROCESSING APPARATUS AND WAFER DICING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WAFER PROCESSING APPARATUS AND WAFER DICING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
WAFER PROCESSING APPARATUS AND WAFER DICING METHOD
Organization Name
Inventor(s)
Youngchul Kwon of Suwon-si (KR)
WAFER PROCESSING APPARATUS AND WAFER DICING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240157472 titled 'WAFER PROCESSING APPARATUS AND WAFER DICING METHOD
Simplified Explanation
The wafer processing apparatus described in the patent application utilizes a laser source to generate a laser beam with specific parameters, a wafer support to hold the wafer in place, and a beam transmission optical system to transfer the laser beam to the wafer. The laser beam is designed to be collected inside the wafer through a self-condensing phenomenon as it moves along the inside of the wafer.
- Laser source generates laser beam with specific parameters
- Wafer support holds wafer in place
- Beam transmission optical system transfers laser beam to wafer
- Laser beam collected inside wafer through self-condensing phenomenon
Potential Applications
The technology could be applied in the semiconductor industry for wafer processing, such as cutting, drilling, or marking.
Problems Solved
This technology allows for more precise and efficient processing of wafers compared to traditional methods.
Benefits
- Higher precision in wafer processing - Increased efficiency in manufacturing processes - Reduced material waste
Potential Commercial Applications
"Advanced Laser Wafer Processing Technology for Semiconductor Industry"
Possible Prior Art
There may be prior art related to laser processing of wafers in the semiconductor industry, but specific examples are not provided in the patent application.
Unanswered Questions
How does the self-condensing phenomenon work inside the wafer?
The patent application does not provide detailed information on the mechanism behind the self-condensing phenomenon.
What are the specific parameters set by the laser source for optimal performance?
The patent application mentions that the laser source sets parameters for the laser beam, but does not specify what these parameters are.
Original Abstract Submitted
provided is a wafer processing apparatus including a laser source for generating a laser beam including a plurality of pulses, a wafer support configured to support a wafer, and a beam transmission optical system for transferring the laser beam output from the laser source to the wafer, wherein the laser source sets parameters of the laser beam so that the laser beam is collected inside the wafer by a self-condensing phenomenon while moving along the inside of the wafer.
