Samsung electronics co., ltd. (20240135987). BIT LINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME simplified abstract
Contents
- 1 BIT LINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BIT LINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to traditional sense amplifiers in terms of speed and efficiency?
- 1.11 What are the potential challenges in implementing this technology on a larger scale in memory devices?
- 1.12 Original Abstract Submitted
BIT LINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME
Organization Name
Inventor(s)
BIT LINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240135987 titled 'BIT LINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME
Simplified Explanation
The abstract describes a bit line sense amplifier for a semiconductor memory device that includes sense amplifier blocks with driver circuits, column selection units, complimentary column selection units, column selection lines, and complimentary column selection lines.
- Sense amplifier blocks detect and amplify signal differences between a bit line and a complimentary bit line.
- Column selection units connect the bit line and a local input/output line based on a first column selection signal.
- Complimentary column selection units connect the complimentary bit line and a complimentary local input/output line based on a second column selection signal.
- Column selection lines transmit the first column selection signal to each column selection unit.
- Complimentary column selection lines transmit the second column selection signal to each complimentary column selection unit.
- The column selection units and complimentary column selection units may be distributed between the sense amplifier blocks.
Potential Applications
This technology can be applied in various semiconductor memory devices to improve the efficiency and speed of data read and write operations.
Problems Solved
This technology helps in enhancing the performance of semiconductor memory devices by efficiently detecting and amplifying signal differences between bit lines.
Benefits
The benefits of this technology include faster data access, improved reliability, and increased data processing speed in semiconductor memory devices.
Potential Commercial Applications
The potential commercial applications of this technology include use in computer systems, mobile devices, servers, and other electronic devices requiring high-speed memory operations.
Possible Prior Art
One possible prior art for this technology could be existing bit line sense amplifiers used in semiconductor memory devices.
Unanswered Questions
How does this technology compare to traditional sense amplifiers in terms of speed and efficiency?
This article does not provide a direct comparison between this technology and traditional sense amplifiers in terms of speed and efficiency. Further research or testing may be needed to determine the specific advantages of this innovation.
What are the potential challenges in implementing this technology on a larger scale in memory devices?
The article does not address the potential challenges in implementing this technology on a larger scale in memory devices. Factors such as cost, compatibility, and scalability could be important considerations that need to be explored further.
Original Abstract Submitted
a bit line sense amplifier of a semiconductor memory device includes: sense amplifier blocks including a pmos driver or an nmos driver that detects and amplifies a signal difference between a bit line and a complimentary bit line, and sequentially arranged in a bit line extending direction; column selection units that connect the bit line and a local input/output line according to a first column selection signal; complimentary column selection units that connect the complimentary bit line and a complimentary local input/output line according to a second column selection signal; column selection lines that transmit the first column selection signal to each of the column selection units; and complimentary column selection lines that transmit the second column selection signal to each of the complimentary column selection units. the column selection units and the complimentary column selection units may be disposed to be distributed between the sense amplifier blocks.
