Samsung electronics co., ltd. (20240128335). SEMICONDUCTOR DEVICES simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES
SEMICONDUCTOR DEVICES
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Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128335 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the patent application includes a unique contact plug structure that improves the performance and reliability of the device. Here are some key points to understand the innovation:
- The contact plug consists of a metal-semiconductor compound layer and a barrier layer, which are designed to ensure proper electrical contact and prevent unwanted reactions at the interface.
- The barrier layer has first and second ends that protrude towards the gate structure, providing additional protection and stability to the contact plug.
- The positioning of the metal-semiconductor compound layer and the barrier layer ensures that the uppermost portion of the contact plug is at a level higher than the source/drain region, optimizing the electrical connection.
Potential Applications
The technology described in this patent application could be applied in various semiconductor devices, such as transistors, diodes, and integrated circuits, to improve their performance and reliability.
Problems Solved
This innovation addresses issues related to contact resistance, reliability, and electrical performance in semiconductor devices, providing a more efficient and stable solution for connecting different regions within the device.
Benefits
Some of the benefits of this technology include improved electrical conductivity, reduced contact resistance, enhanced device performance, and increased reliability, leading to better overall functionality of semiconductor devices.
Potential Commercial Applications
The innovative contact plug structure could find applications in the manufacturing of advanced semiconductor devices for various industries, including electronics, telecommunications, automotive, and aerospace.
Possible Prior Art
One possible prior art in this field could be the use of different contact plug structures with varying materials and configurations to improve the electrical connections in semiconductor devices.
Unanswered Questions
How does the new contact plug structure impact the overall size of the semiconductor device?
The patent application does not provide specific information on how the new contact plug structure affects the size of the semiconductor device. Further research or analysis may be needed to understand the potential impact on device dimensions.
What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing processes?
The patent application does not discuss the challenges that may arise when implementing this technology in mass production. Understanding the practical implications and limitations of the innovation in real-world manufacturing settings could be crucial for its successful adoption.
Original Abstract Submitted
a semiconductor device includes an active region on a substrate, a plurality of channel layers spaced apart from each other, a gate structure on the substrate, a source/drain region on at least one side of the gate structure, and a contact plug connected to the source/drain region. the contact plug includes a metal-semiconductor compound layer and a barrier layer on the metal-semiconductor compound layer. the contact plug includes a first inclined surface and a second inclined surface positioned where the metal-semiconductor compound layer and the barrier layer directly contact each other. the barrier layer includes first and second ends protruding towards the gate structure. the first and second ends are positioned at a level higher than an upper surface of an uppermost channel layer. an uppermost portion of the metal-semiconductor compound layer is positioned at a level higher than an upper surface of the source/drain region.
