Samsung electronics co., ltd. (20240128321). SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE
Organization Name
Inventor(s)
Jongryeol Yoo of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128321 titled 'SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE
Simplified Explanation
The semiconductor device described in the abstract includes an active region with two portions, an isolation region, stacked active layers, an epitaxial structure, a gate structure, and a gate spacer. The epitaxial structure consists of a blocking layer and a source/drain structure, with active blocking portions and bent portions connecting to the gate spacer.
- Active region with two portions: The device has an active region divided into a first portion and a second portion.
- Stacked active layers: Multiple active layers are stacked and spaced apart vertically on the first portion of the active region.
- Epitaxial structure: Positioned on the second portion of the active region, connected to the active layers, and overlapping the isolation region in the vertical direction.
- Gate structure: Extends by intersecting the active region and surrounds each of the active layers.
- Gate spacer: Located on a side surface of the gate structure.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and communication systems.
Problems Solved
This innovation addresses the need for improved performance and efficiency in semiconductor devices by optimizing the structure and functionality of the active and isolation regions.
Benefits
The benefits of this technology include enhanced device performance, increased integration density, reduced power consumption, and improved reliability in semiconductor applications.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for manufacturing high-performance integrated circuits and electronic devices.
Possible Prior Art
One possible prior art related to this technology could be the development of semiconductor devices with stacked active layers and epitaxial structures for improved device performance and functionality.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This technology offers improved performance and efficiency compared to existing structures by optimizing the active and isolation regions, but further comparative analysis with existing technologies is needed for a comprehensive evaluation.
What are the potential challenges or limitations in implementing this technology on a larger scale for commercial production?
While the technology shows promise for enhancing semiconductor device performance, potential challenges in scalability, manufacturing costs, and integration with existing processes may need to be addressed for successful commercial production.
Original Abstract Submitted
a semiconductor device includes an active region including a first portion and a second portion; an isolation region on a side surface of the active region; a plurality of active layers stacked and spaced apart from each other in a vertical direction on the first portion of the active region; an epitaxial structure disposed on the second portion of the active region, connected to the plurality of active layers, and overlapping the isolation region in the vertical direction; a gate structure extending by intersecting the active region and surrounding each of the plurality of active layers; and a gate spacer on a side surface of the gate structure. the epitaxial structure includes a blocking layer and a source/drain structure on the blocking layer. the blocking layer includes a plurality of active blocking portions contacting the plurality of active layers, respectively, and at least one first bent portion bent and extending from at least one of the plurality of active blocking portions and contacting the gate spacer.
