Samsung electronics co., ltd. (20240128319). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Jaeseoung Park of Suwon-si (KR)
Jeonghyuk Yim of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128319 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit device described in the abstract includes a complex structure of conductive and insulating patterns that allow for efficient vertical connections within the device.
- The device features a first conductive pattern on a substrate, a second conductive pattern surrounding and partially covering the first conductive pattern, and an upper insulating structure covering both patterns.
- An upper conductive pattern extends vertically through the upper insulating structure, with a main plug portion overlapping the first and second conductive patterns and a vertical extension portion covering the sidewall of the first conductive pattern.
- The vertical extension portion also overlaps the second conductive pattern, providing a vertical connection between the different layers of the device.
Potential Applications
This technology could be used in advanced semiconductor devices, such as microprocessors and memory chips, to improve performance and efficiency.
Problems Solved
This innovation solves the problem of limited vertical connectivity in integrated circuits, allowing for more complex and compact designs.
Benefits
The benefits of this technology include increased speed and efficiency in data processing, as well as the potential for smaller and more powerful electronic devices.
Potential Commercial Applications
This technology could be applied in the development of high-performance computing devices, data storage solutions, and other advanced electronics.
Possible Prior Art
One possible prior art for this technology could be the use of through-silicon vias (TSVs) in semiconductor devices to enable vertical connections between different layers.
Unanswered Questions
How does this technology compare to existing vertical connection methods in terms of performance and reliability?
This article does not provide a direct comparison between this technology and other vertical connection methods in terms of performance and reliability. Further research or testing may be needed to address this question.
What are the potential challenges in scaling up this technology for mass production in semiconductor manufacturing facilities?
The article does not discuss the potential challenges in scaling up this technology for mass production. Factors such as cost, yield rates, and compatibility with existing manufacturing processes could be important considerations in addressing this question.
Original Abstract Submitted
an integrated circuit device includes a first conductive pattern on a substrate, a second conductive pattern surrounding at least a portion of the first conductive pattern and covering a lower portion of a sidewall of the first conductive pattern, an upper insulating structure on the first conductive pattern and the second conductive pattern, and an upper conductive pattern extending in a vertical direction through the upper insulating structure. the upper conductive pattern includes a main plug portion overlapping the first conductive pattern and the second conductive pattern in the vertical direction, and a vertical extension portion extending from a local region of the main plug portion toward the substrate, the vertical extension portion covering an upper portion of the sidewall of the first conductive pattern and overlapping the second conductive pattern in the vertical direction.
