Samsung electronics co., ltd. (20240128264). SEMICONDUCTOR DEVICES simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Heon Jong Shin of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128264 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the abstract includes active patterns, gate electrodes, trenches, an active cut, and a flowable material layer. Here is a simplified explanation of the patent application:
- The semiconductor device has active patterns on a substrate.
- Gate electrodes are positioned on the active patterns.
- Trenches separate the active patterns and contain an active cut.
- A flowable material layer is present in the trenches.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and automotive systems.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the isolation and connectivity between different components on the substrate.
Benefits
The benefits of this technology include increased functionality, higher integration density, improved reliability, and enhanced electrical performance of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for producing next-generation integrated circuits and electronic devices.
Possible Prior Art
One possible prior art could be the use of similar trench structures in semiconductor devices for isolation and connectivity purposes.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements offered by this technology.
What are the specific electronic applications that could benefit the most from this technology?
The article does not specify the particular electronic applications that could benefit the most from the implementation of this semiconductor device technology.
Original Abstract Submitted
a semiconductor device includes a substrate, first and second active patterns extending in a first horizontal direction on the substrate, first and second gate electrodes extending in a second horizontal direction on the first and second active patterns, respectively, a first trench extending in the second horizontal direction between the first and second gate electrodes and separating the first and second active patterns, at least part of the first trench is in the substrate, an active cut extending along sidewalls and a bottom surface of the first trench and contacting each of the first and second active patterns, a second trench on the active cut in the first trench, and a flowable material layer in at least part of the second trench, the flowable material layer including a flowable insulating material and not being in contact with each of the substrate and the first and second active patterns.
