Samsung electronics co., ltd. (20240120177). SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Dong Hyeon Na of Suwon-si (KR)
Myeong Soo Shin of Suwon-si (KR)
Woong Jin Cheon of Suwon-si (KR)
Kyung-Sun Kim of Suwon-si (KR)
Seung Bo Shim of Suwon-si (KR)
SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120177 titled 'SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The substrate processing method involves loading a substrate onto a substrate support inside a chamber, forming a plasma, providing a first DC pulse signal to an electromagnet generating a magnetic field, and processing the substrate with the plasma.
- The first DC pulse signal is repeated at a first period with a first section and a second section, having different levels during each section.
- Explanation:
- Loading substrate onto support in chamber - Forming plasma - Providing DC pulse signal to electromagnet - Processing substrate with plasma - DC pulse signal repeated with different levels
Potential Applications: - Semiconductor manufacturing - Thin film deposition - Surface cleaning and etching processes
Problems Solved: - Improved control over plasma processing - Enhanced uniformity and efficiency in substrate treatment
Benefits: - Increased precision in plasma processing - Higher quality and consistency in substrate treatment - Reduced processing time and costs
Potential Commercial Applications: - Semiconductor industry - Electronics manufacturing - Solar panel production
Possible Prior Art: - Previous methods of substrate processing using plasma and magnetic fields - Research on DC pulse signals for controlling plasma parameters
Unanswered Questions: 1. What specific materials are most suitable for processing using this method? 2. How does the use of DC pulse signals impact the overall efficiency of the substrate treatment process?
Original Abstract Submitted
a substrate processing method is provided. the substrate processing method comprises loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first dc pulse signal to an electromagnet that generates a magnetic field inside the chamber and processing the substrate with the plasma, wherein the first dc pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, the first dc pulse signal has a first level during the first section, and the first dc pulse signal has a second level different from the first level during the second section.
