Samsung electronics co., ltd. (20240120007). SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Chul Min Choi of Suwon-si (KR)
Chang Hoon Byeon of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120007 titled 'SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The patent application describes a semiconductor memory device with various structures to improve performance and reliability.
- Cell substrate
- Mold structure with stacked gate electrodes
- Channel structure penetrating the mold structure
- String select line on the mold structure
- String select channel structure contacting the channel structure
- Anti-arcing contact penetrating the mold structure
- Insulating pattern between the anti-arcing contact and gate electrodes
- Anti-arcing insulating pattern in contact with the anti-arcing contact
Potential Applications
The technology described in this patent application could be applied in various semiconductor memory devices, such as flash memory, to enhance performance and reliability.
Problems Solved
This technology addresses issues related to performance and reliability in semiconductor memory devices by incorporating anti-arcing contacts and insulating patterns to prevent arcing and improve overall device functionality.
Benefits
The benefits of this technology include improved performance, increased reliability, and potentially longer lifespan for semiconductor memory devices.
Potential Commercial Applications
The technology described in this patent application could have commercial applications in the semiconductor industry for manufacturing advanced memory devices with enhanced performance and reliability.
Possible Prior Art
One possible prior art related to this technology could be the use of anti-arcing contacts in semiconductor devices to prevent electrical arcing and improve device reliability.
What materials are used in the insulating pattern?
The materials used in the insulating pattern are not specified in the abstract. Further details from the full patent application may provide information on the specific materials used.
How does the anti-arcing contact improve device reliability?
The abstract mentions the anti-arcing contact as a feature in the semiconductor memory device, but it does not elaborate on how exactly it improves device reliability. Further information from the full patent application may provide insights into the mechanism behind this improvement.
Original Abstract Submitted
a semiconductor memory device may include a cell substrate; a mold structure including a plurality of gate electrodes stacked on the cell substrate; a channel structure penetrating the mold structure; a string select line on the mold structure; a string select channel structure penetrating the string select line and contacting the channel structure; an anti-arcing contact penetrating the mold structure; an insulating pattern between the anti-arcing contact and the plurality of gate electrodes; and an anti-arcing insulating pattern penetrating the string select line to be in contact with the anti-arcing contact.
