Samsung electronics co., ltd. (20240105776). SEMICONDUCTOR DEVICES simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105776 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with an active region, a gate structure intersecting the active region, a recessed region, multiple channel layers, and a source/drain region connected to the channel layers.
- The semiconductor device has an active region with a recessed region at least on one side of the gate structure.
- The device includes multiple channel layers on the active region, spaced apart from each other and partially surrounded by the gate structure.
- A source/drain region is located in the recessed region of the active region and connected to the channel layers.
Potential Applications
The technology described in this patent application could be applied in:
- Semiconductor manufacturing
- Integrated circuits
- Electronics industry
Problems Solved
This technology helps to:
- Improve performance of semiconductor devices
- Enhance efficiency of electronic components
- Increase functionality of integrated circuits
Benefits
The benefits of this technology include:
- Higher speed and performance
- Better integration of components
- Enhanced reliability and durability
Potential Commercial Applications
A potential commercial application for this technology could be:
- Production of advanced semiconductor devices for consumer electronics
- Development of cutting-edge integrated circuits for various industries
Possible Prior Art
One possible prior art related to this technology is:
- Previous patents on semiconductor device structures with similar features and functionalities
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This technology offers improved performance and efficiency compared to existing semiconductor device structures due to its unique design and configuration.
What are the potential challenges in implementing this technology on a larger scale for commercial production?
Some potential challenges in implementing this technology on a larger scale for commercial production could include manufacturing complexities, cost considerations, and scalability issues.
Original Abstract Submitted
a semiconductor device includes a substrate including an active region extending in a first direction, a gate structure intersecting the active region on the substrate and extending in a second direction, where the active region includes a recessed region at at least one side of the gate structure, a plurality of channel layers on the active region, spaced apart from each other in a third direction that is substantially perpendicular to an upper surface of the substrate, and at least partially surrounded by the gate structure and a source/drain region in the recessed region of the active region and connected to the plurality of channel layers.
