Samsung electronics co., ltd. (20240105604). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE simplified abstract

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Sung-Hun Lee of Yongin-si (KR)

Seokjung Yun of Iksan-si (KR)

Chang-Sup Lee of Hwaseong-si (KR)

Seong Soon Cho of Suwon-si (KR)

Jeehoon Han of Hwaseong-si (KR)

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105604 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a three-dimensional semiconductor device with a unique stack structure that includes first and second stacks on a substrate. Each stack consists of a first electrode and a second electrode, with specific horizontal spacing between the electrodes in each stack and between the two stacks.

• The semiconductor device has a stack structure with first and second stacks on a substrate.
• Each stack includes a first electrode and a second electrode.
• The second electrode of the first stack is horizontally spaced apart from the second electrode of the second stack by a specific distance.
• The first electrode is horizontally spaced apart from the second electrode within each stack by another specific distance.
• The second distance between the first and second electrodes is smaller than half of the first distance.

Potential Applications

The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as high-performance computing, telecommunications, and consumer electronics.

Problems Solved

This innovation addresses the challenge of optimizing the performance and efficiency of three-dimensional semiconductor devices by carefully designing the stack structure to improve electrical properties and reduce interference between components.

Benefits

The benefits of this technology include enhanced device performance, increased energy efficiency, and improved reliability due to the optimized stack structure design. Additionally, the smaller spacing between electrodes allows for more compact device designs.

Potential Commercial Applications

• High-performance computing systems
• Telecommunications infrastructure
• Consumer electronics devices

Possible Prior Art

There may be prior art related to three-dimensional semiconductor devices with stack structures, but specific examples are not provided in the abstract.

How does this technology compare to existing semiconductor device designs in terms of performance and efficiency?

The abstract does not provide a direct comparison with existing semiconductor device designs, so it is unclear how this technology stacks up against current solutions in the market.

What specific manufacturing processes are required to implement this stack structure in semiconductor devices?

The abstract does not mention the manufacturing processes involved in creating the unique stack structure described, leaving a gap in understanding the practical implementation of this technology.

Original Abstract Submitted

a three-dimensional (3d) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. each of the first and second stacks includes a first electrode and a second electrode on the first electrode. a sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. a sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. the second distance is smaller than a half of the first distance.