Samsung electronics co., ltd.. (20240105457). SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Organization Name
samsung electronics co., ltd..
Inventor(s)
Myoung Jae Seo of Suwon-si (KR)
Sung Gil Kang of Suwon-si (KR)
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105457 titled 'SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a substrate processing method that involves generating a preliminary etchant from a process gas through plasma ignition, controlling the composition ratio of the etchant, and performing selective etching of the substrate.
- The method involves providing a process gas and generating a preliminary etchant through plasma ignition.
- The preliminary etchant includes a first etchant and a second etchant.
- By controlling the composition ratio of the preliminary etchant, a process etchant is generated.
- The process etchant is used for selective etching of the substrate.
Potential Applications
This technology can be applied in the semiconductor industry for fabricating semiconductor devices with precise etching capabilities.
Problems Solved
This technology solves the problem of achieving selective etching of substrates with controlled composition ratios of etchants.
Benefits
The benefits of this technology include improved precision in substrate processing, enhanced control over etching processes, and potentially higher quality semiconductor devices.
Potential Commercial Applications
One potential commercial application of this technology is in semiconductor manufacturing processes for producing advanced electronic devices.
Possible Prior Art
Prior art in the field of semiconductor processing may include methods for etching substrates using various etchants and plasma ignition techniques.
Unanswered Questions
How does the composition ratio of the preliminary etchant affect the selectivity of the etching process?
The abstract mentions controlling the composition ratio of the preliminary etchant, but it does not provide specific details on how this affects the selectivity of the etching process.
What are the specific parameters for generating the process etchant based on the composition ratio of the preliminary etchant?
While the abstract mentions controlling the composition ratio of the preliminary etchant to generate the process etchant, it does not elaborate on the specific parameters or methods involved in this process.
Original Abstract Submitted
a substrate processing apparatus, a substrate processing method, and a method of fabricating a semiconductor device are provided. the substrate processing method includes providing a process gas, generating a preliminary etchant, which includes a first etchant and a second etchant, from the process gas through plasma ignition, generating a process etchant by controlling a composition ratio of the preliminary etchant, and performing a selective etching of the substrate with the process etchant.
