Samsung display co., ltd. (20240240320). PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD simplified abstract
Contents
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
Organization Name
Inventor(s)
Myung-Soo Huh of Suwon-si (KR)
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240240320 titled 'PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
The abstract describes a plasma processing apparatus with a chamber for substrate processing, a substrate stage with electrodes, a gas supply unit, and a thermal control unit to maintain electrode temperature.
- Simplified Explanation:
This patent application describes a plasma processing apparatus that uses radio frequency signals and a heat transfer medium to process substrates effectively.
- Key Features and Innovation:
- Chamber for substrate processing - Substrate stage with electrodes receiving radio frequency signals - Gas supply unit for process gas delivery - Thermal control unit maintaining electrode temperature
- Potential Applications:
- Semiconductor manufacturing - Thin film deposition - Surface modification processes
- Problems Solved:
- Inefficient substrate processing - Inconsistent electrode temperature control
- Benefits:
- Improved processing efficiency - Enhanced substrate quality - Precise temperature control
- Commercial Applications:
Plasma processing apparatus can be used in semiconductor fabrication facilities, research laboratories, and industrial manufacturing plants for various substrate processing applications.
- Questions about Plasma Processing Apparatus:
1. How does the thermal control unit contribute to the efficiency of substrate processing? 2. What are the advantages of using radio frequency signals in plasma processing?
- Frequently Updated Research:
Ongoing research focuses on optimizing the thermal control system and exploring new applications for the plasma processing apparatus in different industries.
Original Abstract Submitted
a plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.
