Samsung display co., ltd. (20240212625). GATE DRIVING CIRCUIT simplified abstract
Contents
GATE DRIVING CIRCUIT
Organization Name
Inventor(s)
Youngwan Seo of Yongin-si (KR)
GATE DRIVING CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240212625 titled 'GATE DRIVING CIRCUIT
Simplified Explanation: The patent application describes a gate driving circuit that minimizes leakage current in turned-off transistors when pull-down transistors output low-level voltage signals.
Key Features and Innovation:
- Two transistors in series to reduce leakage current in the off state.
- Inclusion of capacitors to further reduce leakage current.
- Better control of voltages at nodes for stable output gate and carry voltages.
Potential Applications: The technology can be applied in various electronic devices requiring stable gate signals, such as integrated circuits, microprocessors, and memory modules.
Problems Solved: The technology addresses the issue of leakage current in turned-off transistors, ensuring stable gate signals are output even when pull-down transistors are active.
Benefits:
- Improved stability of gate signals.
- Enhanced control of output voltages.
- Increased reliability of electronic devices.
Commercial Applications: The technology can be utilized in the semiconductor industry for manufacturing high-performance electronic components with improved efficiency and reliability.
Prior Art: Readers can start searching for prior art related to this technology in the field of semiconductor device design and gate driving circuits.
Frequently Updated Research: Stay updated on the latest advancements in gate driving circuit technology and semiconductor device design to enhance the performance of electronic devices.
Questions about Gate Driving Circuit Technology: 1. What are the key advantages of minimizing leakage current in gate driving circuits? 2. How does the inclusion of capacitors help reduce leakage current in turned-off transistors?
Original Abstract Submitted
a gate driving circuit from which stable gate signals may be output by minimizing a leakage current of turned-off transistors in case that pull-down transistors output a gate signal and a carry signal of a low-level voltage. some transistors in the gate driving circuit include two transistors in series to reduce leakage current in an off state, and capacitors are further included to reduce leakage current. therefore voltages at nodes can be better controlled, and so that the output gate and carry voltages can be stably controlled.
