Samsung Electronics Co., Ltd. patent applications on May 30th, 2024
Patent Applications by Samsung Electronics Co., Ltd. on May 30th, 2024
Samsung Electronics Co., Ltd.: 168 patent applications
Samsung Electronics Co., Ltd. has applied for patents in the areas of H04W72/23 (14), H01L23/00 (13), H10B80/00 (13), H10B43/27 (12), H10B43/35 (8)
With keywords such as: device, including, based, layer, substrate, configured, electronic, semiconductor, information, and communication in patent application abstracts.
Patent Applications by Samsung Electronics Co., Ltd.
Inventor(s): Stefan van der Hoff of Mountain View CA (US) for samsung electronics co., ltd., Philipp Schoessler of Scotts Valley CA (US) for samsung electronics co., ltd., Daeeop Kim of Cupertino CA (US) for samsung electronics co., ltd., Hanna Fuhrmann of San Francisco CA (US) for samsung electronics co., ltd., Tara Sriram of Sunnyvale CA (US) for samsung electronics co., ltd., Curtis Aumiller of San Jose CA (US) for samsung electronics co., ltd., Cathy Kim of Palo Alto CA (US) for samsung electronics co., ltd., Jiawei Zhang of Sunnyvale CA (US) for samsung electronics co., ltd.
IPC Code(s): A45C11/00, G09G3/20, H04M1/04
Abstract: in one embodiment, an apparatus includes at least three sides forming an open enclosure, the at least three sides comprising a back side, a top, and a front side. the apparatus further includes a holder coupled to the inner surface of the back side and configured to secure a mobile client device to the apparatus. at least a portion of the front side opposite the holder includes a substantially transparent material.
20240172852.COVER OF ELECTRONIC DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Dokhwan CHA of Suwon-si (KR) for samsung electronics co., ltd., Jaecheon KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A45C11/00, A45C13/00, G06F1/16, H04M1/04
Abstract: an electronic device is provided. the electronic device includes a first cover fixing the electronic device, a second cover rotatably connected to the first cover, and a strap having one end connected to the first cover, wherein the strap includes a first region including a first end rotatably connected to the first cover, a second region including a first magnetic body and including a second end portion which is at least partially bendable, and a third region connecting the first region and the second region, wherein the second cover may include a second magnetic body positioned at an end portion of the second cover and configured to be magnetically coupled to the first magnetic body.
Inventor(s): Chang Soon PARK of Suwon-si (KR) for samsung electronics co., ltd., Ui Kun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Young Soo Kim of Suwon-si (KR) for samsung electronics co., ltd., Hye Rim Lim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A61B5/021, A61B5/00, A61B5/029
Abstract: an apparatus for estimating blood pressure may include: a photoplethysmogram (ppg) sensor configured to measure a ppg signal from a user; and a processor configured to: extract a cardiovascular feature from the ppg signal; calculate a first variation in the extracted cardiovascular feature compared to a reference cardiovascular feature measured at a reference time; determine a measurement posture of the ppg signal based on a time interval between two waveform components of the ppg signal; in response to the measurement posture corresponding to the reference posture, estimate the blood pressure based on the first variation; and in response to the measurement posture not corresponding to the reference posture, obtain a second variation by correcting the first variation; and estimate blood pressure based on the second variation.
Inventor(s): Bok Soon KWON of Suwon-si (KR) for samsung electronics co., ltd., Kyeongha KWON of Daejeon (KR) for samsung electronics co., ltd., Do Yun PARK of Seoul (KR) for samsung electronics co., ltd., Young Min SIM of Daejeon (KR) for samsung electronics co., ltd., Chulyoon JUNG of Daejeon (KR) for samsung electronics co., ltd., Sang Kyu KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungho KIM of Suwon-si (KR) for samsung electronics co., ltd., So Young LEE of Suwon-si (KR) for samsung electronics co., ltd., Ho Taik LEE of Suwon-si (KR) for samsung electronics co., ltd., Hong Soon RHEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A61B5/026, A61B5/00, A61B5/0205, A61B5/145
Abstract: an electronic device for estimating body temperature may include: a sensor including a heat source, a pair of first temperature sensors horizontally spaced apart from each other at two opposing sides of the heat source, and a pair of second temperature sensors vertically spaced apart from the pair of first temperature sensors in a thickness direction of the electronic device; and at least one processor configured to estimate a blood temperature difference based on temperatures measured by the pair of first temperature sensors and the pair of second temperature sensors, and estimate blood flow information based on the estimated blood temperature difference.
Inventor(s): Soohan YOO of Suwon-si (KR) for samsung electronics co., ltd., Hyunjun JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A61B5/0295, A61B5/00, A61B5/01
Abstract: according to an embodiment, an electronic device includes: a photoplethysmography (ppg) sensor, a temperature sensor, a memory, and a processor. the processor is configured to store first information on blood flow of a user, as associated with second information on temperature of a part of the user's body. the processor is configured to change a state of the temperature sensor from active state to inactive state. the processor is configured to identify that a first value representing the blood flow of the user is out of a first range. the processor is configured to change the state of the temperature sensor from the inactive state to the active state. the processor is configured to, based on identifying that a second value representing the temperature of the part of the user's body is out of the second range, provide a notification.
Inventor(s): Yoon Jae KIM of Suwon-si (KR) for samsung electronics co., ltd., Jin Young PARK of Suwon-si (KR) for samsung electronics co., ltd., Hyun Seok MOON of Suwon-si (KR) for samsung electronics co., ltd., Kun Sun EOM of Suwon-si (KR) for samsung electronics co., ltd., Myoung Hoon JUNG of Suwon-si (KR) for samsung electronics co., ltd., Jeong Eun HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A61B5/145, A61B5/00, A61B5/1455, G06N20/00
Abstract: provided is an apparatus configured to estimate an antioxidant component, the apparatus including a storage configured to store first antioxidant concentrations estimated at a first body part and second antioxidant concentrations estimated at a second body part, and a processor configured to estimate the first antioxidant concentrations at the first body part, to extract, as training data, data pairs of the first antioxidant concentrations and the second antioxidant concentrations from the storage based on learning conditions, and generate a transformation model configured to transfer the second antioxidant concentrations into a reference index based on the training data.
Inventor(s): Mikyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Kitae PARK of Suwon-si (KR) for samsung electronics co., ltd., Jonghan KIM of Suwon-si (KR) for samsung electronics co., ltd., Seong Joong KIM of Suwon-si (KR) for samsung electronics co., ltd., Chisung BAE of Suwon-si (KR) for samsung electronics co., ltd., Hyeokki HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A61B5/25
Abstract: a three-dimensional (3d) nanoprobe device includes a body portion including a plurality of body layers that are stacked, a plurality of nanoprobes respectively extending longitudinally from the body portion, with each of the plurality of nanoprobes comprising a plurality of extension layers that are stacked, and an electrode portion disposed on a portion of the body portion.
20240173192.MOTION ASSISTANCE APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jaehong KIM of Suwon-si (KR) for samsung electronics co., ltd., Minhyung LEE of Suwon-si (KR) for samsung electronics co., ltd., Seungyong HYUNG of Suwon-si (KR) for samsung electronics co., ltd., Byungjune CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A61H1/02, A61H3/00
Abstract: a wearable motion assistance apparatus may include: a waist plate positioned on a rear surface of a user's waist; a base frame extending from opposite ends of the waist plate and capable of accommodating a user's lumbar part therein; a main belt mounted on the base frame and capable of surrounding a user's abdomen; and a main band which is connected to the main belt and may be brought into elastic close contact with the user's lumbar part.
Inventor(s): Seungjoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Sangyoon Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A61H3/00, A61H1/02, G08C17/02, G16H40/67
Abstract: an electronic device may establish a first connection with a first wearable device which includes a first actuator and is worn by a first user of the electronic device, establish a second connection with an external electronic device connected with a second wearable device which includes a second actuator and is worn by a second user, while the first connection and the second connection are maintained, obtain first movement information of the electronic device and second movement information of the external electronic device, based on the first movement information and the second movement information, identify a first mode in which the first wearable device is configured to operate using the first actuator and a second mode in which the second wearable device is configured to operate using the second actuator, transmit, to the first wearable device through the first connection, a first request signal for operating the first mode, and transmit, to the external electronic device through the second connection, a second request signal for operating the second mode.
Inventor(s): Raveendran Vaidhyanathan of Rockaway NJ (US) for samsung electronics co., ltd., Viktor Kopyrin of Grosse Pointe Shores MI (US) for samsung electronics co., ltd.
IPC Code(s): B01D33/48, B01D33/27, B01D33/46, D06F39/10
Abstract: a microplastic filter includes a housing including an inlet configured to receive water. the microplastic filter also includes a fine filter disposed to rotate within the housing and configured to filter residues from the water. the microplastic filter further includes an inside wiper disposed within the fine filter. the inside wiper includes a center post disposed along a rotational axis of the fine filter and a helical curved wall spirally extending between the center post and the fine filter, where the helical curved wall is configured to guide a portion of the water to backflow through the fine filter and force away at least some filtered residues from pores of the fine filter to prevent fouling or clogging of the fine filter. in addition, the microplastic filter includes an outside wiper spirally disposed around the fine filter and configured to dislodge other filtered residues from the fine filter as the fine filter rotates.
Inventor(s): Daeok Kim of Suwon-si (KR) for samsung electronics co., ltd., Dongyeun Koh of Daejeon (KR) for samsung electronics co., ltd., David Kim of Suwon-si (KR) for samsung electronics co., ltd., Jeong-Un Jang of Daejeon (KR) for samsung electronics co., ltd.
IPC Code(s): B01D61/36, B01D69/02, B01D69/04, C01F5/28, C01F7/50, C01F11/22, C02F1/44, C02F1/66
Abstract: a method for treating wastewater containing fluorine is disclosed. the method for treating wastewater includes applying a vacuum to a membrane unit including a membrane having a hollow, injecting wastewater into the membrane unit so that the wastewater contacts an outer surface of the membrane, recovering hydrofluoric acid gas by evaporating hydrofluoric acid (hf) in the wastewater based on a vacuum applied to the inner surface of the membrane and moving the evaporated hydrofluoric acid (hf) to the inner surface through the membrane, injecting sweep gas into the membrane unit to discharge hydrofluoric acid gas remaining on the inner surface of the membrane, and forming a metal fluoride by reacting the recovered hydrofluoric acid gas with a metal oxide or metal hydroxide using a scrubbing process.
Inventor(s): Su Keun KUK of Suwon-si (KR) for samsung electronics co., ltd., Hyun Chul LEE of Suwon-si (KR) for samsung electronics co., ltd., Sang Min JI of Suwon-si (KR) for samsung electronics co., ltd., Sungwoo KANG of Suwon-si (KR) for samsung electronics co., ltd., Dong Sik YANG of Suwon-sI (KR) for samsung electronics co., ltd.
IPC Code(s): B01J35/00, A61L9/20, B01J35/02
Abstract: a p-n heterojunction photocatalyst, an air purifier including the p-n heterojunction photocatalyst, and a method of preparing the p-n heterojunction photocatalyst. the p-n heterojunction photocatalyst includes a granule type composite which includes: first compound particles; and second compound particles on at least a portion of surfaces of the first compound particles, wherein the composite has a size of about 0.9 �m to about 5 �m based on a major axis, a standard deviation of the size is about �0.9 �m or less, and upon exposure to energy irradiation, the composite generates a reactive oxygen species of singlet oxygen (o) to induce photolysis of gaseous pollutants.
Inventor(s): SANGJINE PARK of Suwon-si (KR) for samsung electronics co., ltd., Ji Hwan PARK of Suwon-si (KR) for samsung electronics co., ltd., KUNTACK LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B08B3/02, B08B3/08, F26B5/00, G03F7/38, H01L21/02
Abstract: a method of processing a substrate includes wetting a substrate, supplying a supercritical fluid onto the wetted substrate to dry the substrate, and cleaning the dried substrate. the cleaning of the substrate includes supplying a cleaning solution onto a top surface of the substrate, and supplying a cleaning solution onto a bottom surface of the substrate.
Inventor(s): DONGHOON KWON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B24B37/24, B24B1/00
Abstract: a chemical mechanical polishing apparatus includes a polishing platen that includes an electromagnet and is rotatable; a lower polishing pad that is positioned on the polishing platen, the lower polishing pad including a first area and a second area, the first area including a first magnetic material and the second area including a non-magnetic material, wherein the first area overlaps the electromagnet; an upper polishing pad that is positioned on the lower polishing pad, includes a second magnetic material, and overlaps the first area; and a polishing head configured to provide a wafer on the upper polishing pad and is rotatable.
Inventor(s): Yeonsu Go of Suwon-si (KR) for samsung electronics co., ltd., Donghoon Kwon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B24B53/12, B24B1/04, B24B53/017
Abstract: provided is a conditioner including a conditioning arm on a polishing pad that is configured to chemically mechanically polish a substrate based on slurry, a conditioning disk on the conditioning arm that is configured to condition the polishing pad, a dilution solution injector on a first side of the conditioning arm and configured to inject a dilution solution to the slurry introduced into a space under the conditioning disk, and a sonicator on a second side of the conditioning arm and configured to apply an ultrasonic wave to debris generated from the polishing pad.
Inventor(s): Kyung-Rock KIM of Yongin-si (KR) for samsung electronics co., ltd., Youngbo Shim of Seoul (KR) for samsung electronics co., ltd., Sunghwan Ahn of Seoul (KR) for samsung electronics co., ltd., Jusuk Lee of Hwaseong-si (KR) for samsung electronics co., ltd., Bokman Lim of Yongin-si (KR) for samsung electronics co., ltd., Jun-Won Jang of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): B25J9/00, A61B5/00, A61B5/11, A61H1/02, A61H3/00, G01P13/00
Abstract: a method and apparatus for recognizing a motion of a user are provided. the apparatus may map each of right leg angle information and left leg angle information to context information by comparing each of the right leg angle information and left leg angle information to a comparison value and/or preset threshold, may generate a motion event corresponding to the context information based on a criterion, and may recognize the motion of the user based on the motion event and a previous motion of the user.
Inventor(s): Mun Ja KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Byungchul YOO of Yongin-si (KR) for samsung electronics co., ltd., Haeshin LEE of Daejeon (KR) for samsung electronics co., ltd., Chang Young JEONG of Yongin-si (KR) for samsung electronics co., ltd., Yunhan LEE of Daejeon (KR) for samsung electronics co., ltd.
IPC Code(s): C09J129/04, C08K3/04, C08K3/36, C08K5/05, G03F1/64
Abstract: an adhesive composition, a method for preparing the same, a reticle assembly including the same, and a method for fabricating the reticle assembly including the same are provided. the adhesive composition includes a polyphenol compound including tannic acid, a polymer including polyvinyl alcohol, and a solvent including water and alcohol.
Inventor(s): Hyundong HA of Suwon-si (KR) for samsung electronics co., ltd., Yuho WON of Suwon-si (KR) for samsung electronics co., ltd., Taehyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Nayoun WON of Suwon-si (KR) for samsung electronics co., ltd., Hogeun CHANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C09K11/62, C09D11/037, C09D11/50, C09K11/02, H01L33/00, H01L33/06
Abstract: a semiconductor nanoparticle, a method of manufacturing the semiconductor nanoparticle, a composite including the semiconductor nanoparticle, a color conversion panel, and a display panel. the semiconductor nanoparticle includes silver, indium, gallium, and sulfur, and is configured to emit blue light, and exhibits a quantum yield of greater than or equal to about 40% and a full width at half maximum of less than 70 nm.
Inventor(s): Yuho WON of Suwon-si (KR) for samsung electronics co., ltd., Yongwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Peter Reiss of Grenoble (FR) for samsung electronics co., ltd., Avijit Saha of Grenoble (FR) for samsung electronics co., ltd., Ranjana Yadav of Grenoble (FR) for samsung electronics co., ltd.
IPC Code(s): C09K11/64, C09K11/62, G02F1/1335, H10K50/115, H10K59/38
Abstract: a nanocrystal particle includes a group iii-vi compound including gallium and sulfur, wherein the nanocrystal particle is configured to emit a first light, a maximum emission peak of the first light is in a wavelength range of greater than or equal to about 300 nanometers and less than or equal to about 485 nanometers, an absolute quantum efficiency of the nanocrystal particle is greater than or equal to about 26%, and a full width at half maximum of the maximum emission peak of the first light is greater than or equal to about 10 nanometers and less than or equal to about 70 nanometers, when analyzed by photoluminescence spectroscopy.
20240174969.DEVICE WITH CELL ANALYSIS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jonghan KIM of Suwon-si (KR) for samsung electronics co., ltd., Chisung BAE of Suwon-si (KR) for samsung electronics co., ltd., Mikyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Takhyung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C12M1/34, G01N33/50
Abstract: a computing device is provided. the computing device includes an electrode layer comprising a plurality of microelectrode arrays (meas), each mea being configured with electrodes for stimulation and sensing of biological cells; an interposer layer comprising an interposer for a wiring connection between the plurality of meas and a substrate of the computing device; a circuit layer comprising a plurality of circuit chips configured to stimulate the cells and store excitement of the cells in response to the stimulation by corresponding electrodes; and a controller configured to control whether or how to connect the plurality of circuit chips to the plurality of meas.
20240175619.REFRIGERATOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jaepil Cho of Suwon-si (KR) for samsung electronics co., ltd., Hyoju Han of Suwon-si (KR) for samsung electronics co., ltd., Byungkwan Yang of Suwon-si (KR) for samsung electronics co., ltd., Jooyong Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F25C1/24
Abstract: a refrigerator includes a main body, a freezing compartment and a refrigerating compartment disposed inside the main body, an evaporator disposed in a cooling flow path and provided to supply cold air to the freezing compartment, a freezing compartment duct disposed in the freezing compartment to supply cold air generated by the evaporator to the freezing compartment, an ice maker disposed inside the main body, a water supply pipe provided to penetrate the cooling flow path to be directed to the ice maker, and a cover member coupled to the freezing compartment duct to block a movement of air between a cooling flow path and the freezing compartment.
Inventor(s): SANGJINE PARK of Suwon-si (KR) for samsung electronics co., ltd., Ji Hwan PARK of Suwon-si (KR) for samsung electronics co., ltd., KUNTACK LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F26B5/00, F26B25/16
Abstract: disclosed are substrate processing baffles, substrate processing apparatuses, and substrate processing apparatus fabrication methods. the substrate processing baffle comprises a plate body having a central axis that extends in a first direction, and an upper body on the plate body. the upper body includes an upper flow path connected to a top surface of the upper body. the plate body includes a lower flow path connected to the upper flow path and a bottom surface of the plate body, and a coupling hole extending through a top surface of the plate body. the coupling hole includes a placement hole. the placement hole includes a position setting aperture whose width decreases with decreasing distance from the top surface of the plate body.
20240175750.IMAGE SENSOR AND METHOD OF OPERATING_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Radwanul Hasan SIDDIQUE of Pasadena CA (US) for samsung electronics co., ltd., Daniel ASSUMPCAO of Issaquah WA (US) for samsung electronics co., ltd., Hyuck CHOO of Yongin-Si (KR) for samsung electronics co., ltd., Hyochul KIM of Yongin-si, Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): G01J3/28, G01J3/02, G01J3/18, G01J3/44
Abstract: optical spectrometers may be used to determine the spectral components of electromagnetic waves. spectrometers may be large, bulky devices and may require waves to enter at a nearly direct angle of incidence in order to record a measurement. what is disclosed is an ultra-compact spectrometer with nanophotonic components as light dispersion technology. nanophotonic components may contain metasurfaces and bragg filters. each metasurface may contain light scattering nanostructures that may be randomized to create a large input angle, and the bragg filter may result in the light dispersion independent of the input angle. the spectrometer may be capable of handling about 200 nm bandwidth. the ultra-compact spectrometer may be able to read image data in the visible (400-600 nm) and to read spectral data in the near-infrared (700-900 nm) wavelength range. the surface area of the spectrometer may be about 1 mm, allowing it to fit on mobile devices.
Inventor(s): Seong Seob SHIN of Suwon-si (KR) for samsung electronics co., ltd., Soon lL Kwon of Suwon-si (KR) for samsung electronics co., ltd., Soo Yong Park of Suwon-si (KR) for samsung electronics co., ltd., Tae-Hwan Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01R31/28
Abstract: a test device includes a main board. first and second device under test (dut) boards are disposed on the main board. first and second semiconductor devices are mounted on the first and second dut boards, respectively. the first and second semiconductor devices are duts. first and second connectors are respectively disposed at a first end and a second end of the first dut board. the first and second connectors are spaced apart from each other and respectively transmit first and second signals. the first signal forms a first electrical path along which the first signal is input to the first dut board via the first connector. the second signal forms a second electrical path along which the second signal is output from the first dut board and input to the second dut board via the second connector.
Inventor(s): SEKYE JEON of SUWON-SI (KR) for samsung electronics co., ltd., JINWOO LEE of SUWON-SI (KR) for samsung electronics co., ltd., JONGCHEON SUN of SUWON-SI (KR) for samsung electronics co., ltd., SUYOUNG LEE of SUWON-SI (KR) for samsung electronics co., ltd., HYEONGCHEOL LEE of SUWON-SI (KR) for samsung electronics co., ltd., CHUNGSAM JUN of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G01R31/28
Abstract: in a substrate inspection method, a substrate is provided on a substrate stage, the substrate having internal wires and connection wires, the internal wires respectively provided between stacked insulating layers, the connection wires respectively extending from the internal wires and exposed to an upper surface of the substrate. an electric circuit of the internal wires in the substrate is modeled to generate a circuit model. ac power is applied to the substrate stage to obtain measured capacitance values of the internal wires through currents that are obtained from the connection wires. dc power is applied to the substrate stage to obtain measured resistance values of the internal wires through voltages that are obtained from the connection wires. impedance values of the internal wires are calculated through the measured capacitance values and the measured resistance values. the impedance values and the circuit model are compared to determine reliability of the substrate.
Inventor(s): Kunyoung CHOI of Suwon-si (KR) for samsung electronics co., ltd., Doosuk KANG of Suwon-si (KR) for samsung electronics co., ltd., Moonseok KANG of Suwon-si (KR) for samsung electronics co., ltd., Hyunchul KIM of Suwon-si (KR) for samsung electronics co., ltd., Yi YANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01S3/04, G01S3/02
Abstract: an electronic device is provided. the electronic device includes an ultra-wideband (uwb) communication circuit including at least one antenna for acquiring signals from an external electronic device, a processor operatively connected with the uwb communications circuit, and memory operatively connected with the processor. the memory may store one or more instructions which, when executed, cause the processor to obtain at least one signal from the at least one antenna, determine a phase-difference-of-arrival of the at least one signal, obtain information related to the state of the electronic device, obtain a calibration value corresponding to the obtained state information of the electronic device from the memory, and determine the angle-of-arrival of the at least one signal based on the phase-difference-of-arrival of the at least one signal and the calibration value.
Inventor(s): Changyoung PARK of Suwon-si (KR) for samsung electronics co., ltd., Sanghun Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02F1/017, G02F1/365, H01L31/0216
Abstract: provided is an infrared modulator including a silicon substrate, a multiple buffer layer on the silicon substrate, the multiple buffer layer including indium phosphide (inp), a first type semiconductor layer on the multiple buffer layer, the first type semiconductor layer including inp, a light absorption layer on the first type semiconductor layer, the light absorption layer including a quantum well structure including indium gallium arsenic phosphide (ingaasp), and a second type semiconductor layer on the light absorption layer, the second type semiconductor layer including inp.
Inventor(s): Tae Gon KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Garam PARK of Seoul (KR) for samsung electronics co., ltd., Jooyeon AHN of Suwon-si (KR) for samsung electronics co., ltd., Shang Hyeun PARK of Yongin-si (KR) for samsung electronics co., ltd., Shin Ae JUN of Seongnam-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02F1/017, B82Y20/00, C09K11/02, C09K11/08, C09K11/62, C09K11/88, H01L33/06, H01L33/28, H01L33/30, H01L33/34, H10K50/115
Abstract: a quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.
Inventor(s): HEUNGSUK OH of Suwon-si (KR) for samsung electronics co., ltd., Joobyoung KIM of San Jose CA (US) for samsung electronics co., ltd., SANGWOOK KIM of Suwon-si (KR) for samsung electronics co., ltd., HEE-JUN LEE of Suwon-si (KR) for samsung electronics co., ltd., JEEEUN JUNG of Suwon-si (KR) for samsung electronics co., ltd., KYU-BIN HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F1/36, H01L21/32
Abstract: a photomask fabrication method comprising performing an optical proximity correction (opc) on a design pattern to generate a correction pattern, and manufacturing the photomask having the correction pattern. the step of performing the opc includes dividing the design pattern into a plurality of segments, producing a hash value for each of the plurality of segments, and generating the correction pattern by applying a first correction bias to ones of the plurality of segments having a same hash value, wherein at least two of the plurality of segments have the same hash value. the step of producing the hash value includes generating a key segment in a target segment, creating a query region around the key segment, and producing the hash value for the target segment based on a pattern image in the query region.
Inventor(s): Hachul Shin of Suwon-si (KR) for samsung electronics co., ltd., Dohyung Kim of Suwon-si (KR) for samsung electronics co., ltd., Jooon Park of Suwon-si (KR) for samsung electronics co., ltd., Sanghwan Lee of Suwon-si (KR) for samsung electronics co., ltd., Seongchul Hong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F1/70
Abstract: there is provided an extreme ultraviolet (euv) overlay correcting method capable of effectively correcting an overlay error in an euv exposure process and a method of manufacturing a semiconductor device including the same. the euv overlay correcting method includes forming a first photoresist (pr) pattern on a wafer by performing an euv exposure process using a reticle, inspecting an euv overlay for the first pr pattern and obtaining a first overlay for a first overlay parameter in which an overlay three-dimensionally increases away from a center to opposing sides of the first pr pattern in a first direction perpendicular to a scan direction, calculating deformation data of the reticle based on the first overlay, applying a voltage to a clamp electrode of a reticle stage to create the reticle into a deformed reticle, and forming a second pr pattern on the wafer by performing an euv exposure process using the deformed reticle.
Inventor(s): EUNHEE JEANG of SUWON-SI (KR) for samsung electronics co., ltd., JEONGGIL KIM of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/00
Abstract: an extreme ultraviolet (euv) light uniformity control apparatus includes a plurality of nano thin-films each having a band shape extending in a first direction that is a scanning direction of euv exposure equipment and linearly arranged under a reticle of the euv exposure equipment in a second direction that is perpendicular to the first direction. the apparatus further includes thin film mounts fixing the nano thin-films on both sides in the first direction, and a thin film control device connected to the thin film mounts and controlling the nano thin-films. euv light from the euv exposure equipment is projected onto a wafer that is an exposure target, after passing through the nano thin-films twice by being incident to and reflected from the reticle, and the euv light projected on the wafer is uniformly adjusted by using the thin film control device.
Inventor(s): Jaeyoung JUNG of Suwon-si (KR) for samsung electronics co., ltd., Heungryong OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G05D1/247, A47L9/28, G05D1/661, G05D105/10, G05D107/40, G05D111/30
Abstract: a robot cleaner is disclosed. the robot cleaner comprises: a wireless communication module comprising wireless communication circuitry; a uwb communication module comprising uwb communication circuitry; and at least one processor, comprising processing circuitry, individually and/or collectively, configured to: identify whether at least one electronic device capable of uwb communication and at least one electronic device capable of wireless communication are present in a space where the robot cleaner is located, and based on the presence of a first electronic device capable of uwb communication and a second electronic device capable of wireless communication being identified, identify a first distance between the first electronic device and the robot cleaner using the uwb communication module, identify a second distance between the second electronic device and the robot cleaner using the wireless communication module, identify a third distance between a charging station, located in the space and capable of uwb communication, and the robot cleaner using the uwb communication module, and identify the location of the robot cleaner based on the first distance, the second distance, the third distance, the location of the first electronic device, the location of the second electronic device, and the location of the charging station, wherein wireless communication includes a communication scheme different from uwb communication.
Inventor(s): Junyoung Maeng of Suwon-si (KR) for samsung electronics co., ltd., Jaewoo Park of Suwon-si (KR) for samsung electronics co., ltd., Myoungbo Kwak of Suwon-si (KR) for samsung electronics co., ltd., Junghwan Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F1/10
Abstract: an apparatus and method for timing skew calibration. for example, the apparatus may include an analog-to-digital conversion circuit configured to sample an input signal based on a clock signal and convert the sampled input signal into a digital code, a skew detection circuit configured to calculate a first sum of standard deviations for respective levels of the digital code, compare the first sum of the standard deviations with a previously calculated second sum of standard deviations, and select a smaller value from among the first sum and the second sum, and a compensation circuit configured to compensate for a skew of the clock signal based on the selected one of the first sum and the second sum.
Inventor(s): Suhwan JIN of Suwon-si (KR) for samsung electronics co., ltd., Kunsok KANG of Suwon-si (KR) for samsung electronics co., ltd., Daeyeon YUN of Suwon-si (KR) for samsung electronics co., ltd., Seungil YOON of Suwon-si (KR) for samsung electronics co., ltd., Eungsik YOON of Suwon-si (KR) for samsung electronics co., ltd., Taedon HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/01, G06F3/041
Abstract: an operating method of the display device includes detecting, through at least one sensor, at least one sensing value corresponding to the at least one sensor, identifying a touch area on the display device that is touched by a mobile device, based on the at least one sensing value, receiving status information about an operation that is being executed by the mobile device, from the mobile device, and performing a function corresponding to the identified touch area, based on the received status information.
Inventor(s): Jihwan NAM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/01, G06V40/20, H04N7/14
Abstract: an electronic device is provided. the electronic device includes memory storing instructions, a camera module, a communication module, a display module, and at least one processor operatively connected to the memory, the camera module, the communication module, and the display module. the instructions, that when executed by the at least one processor, cause the electronic device to identify a reception event of a video call based on the communication module, hook one or more images captured based on the camera module to provide image information corresponding to the hooked one or more images to a first application, identify a gesture based on information output from the first application, by inputting the image information to the first application, and perform at least one operation corresponding to the identified gesture.
Inventor(s): Sung-Jin YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/0481, G06F3/0482, G06F3/04842, G06F3/04847, G06F3/0488, G06F3/04883
Abstract: a user interface (ui) display method is provided. the ui display method includes displaying an operation window including one or more setting items on a screen, and if a first one of the setting items is inputted, causing at least a part or all of the remaining operation window part except for the first item not to be displayed on the screen.
20240176458.SCREEN CONTROLLING METHOD AND DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yeonjoo JWA of Suwon-si (KR) for samsung electronics co., ltd., Minho YANG of Suwon-si (KR) for samsung electronics co., ltd., Eunsil LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/0481, G06F3/04847
Abstract: according to an example embodiment, a method and device for controlling a screen displayed on a display is provided. the method includes: based on a layout of a split screen displayed on the display, verifying a trigger region in the split screen; based on a first input controlling a handle region of a pop-up window displayed on an upper layer of the split screen, detecting that at least a portion of the trigger region is overlaid with the pop-up window; changing the layout of the split screen based on at least one of a position of the portion of the trigger region overlaid with the pop-up window, a relative position of the handle region and a divider of the layout; and displaying a region in the split screen in which the pop-up window is to be arranged.
Inventor(s): Nguyen Van KHANH of Bac Ninh province (VN) for samsung electronics co., ltd., Do Thi Phuong THAO of Bac Ninh province (VN) for samsung electronics co., ltd., Ha Thanh LUAN of Bac Ninh province (VN) for samsung electronics co., ltd., Bui Thi Le QUYEN of Bac Ninh province (VN) for samsung electronics co., ltd., Nguyen Tien DAT of Bac Ninh province (VN) for samsung electronics co., ltd.
IPC Code(s): G06F3/04845, G06F16/583
Abstract: an electronic device is provided. the electronic device includes memory, a display, and a processor. the memory stores at least one instruction configured to cause, when executed by the processor, the electronic device to, according to an embodiment, when a first input for capturing screenshot for information displayed on the display is identified, obtain data related to an application providing the information, as metadata of the captured screenshot. the memory stores at least one instruction configured to cause, when executed by the processor, the electronic device to, according to an embodiment, when a second input for editing the captured screenshot is identified, identify whether an edit template associated with metadata of the captured screenshot exists in the memory. the memory stores at least one instruction configured to cause, when executed by the processor, the electronic device to, according to an embodiment, when an edit template associated with metadata of the captured screenshot exists in the memory, edit the captured screenshot based on the edit template and control the display to display the edited screenshot.
Inventor(s): Jooyoung JEON of Suwon-si (KR) for samsung electronics co., ltd., Sangheon KIM of Suwon-si (KR) for samsung electronics co., ltd., Taeyong MOON of Suwon-si (KR) for samsung electronics co., ltd., Dongjun LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyesoon JEONG of Suwon-si (KR) for samsung electronics co., ltd., Yeunwook LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/0486, G06F3/01, G06F3/04817, G06F3/0488
Abstract: an electronic device is provided. the electronic device includes a touch screen display, memory, and one or more processors communicatively coupled to the touch screen display and the memory, wherein the memory store one or more computer programs including computer-executable instructions that, when executed by the one or more processors, cause the electronic device to detect a long press input in response to elapsing of a predetermined first touch time from a first touch for selecting an object displayed on the touch screen display, after the long press input is received, receive a drag signal indicating a move of the first touch in a certain direction, in case that the drag signal does not deviate from any of a drag movement time or a drag movement distance, maintain a selected object in a fixed state, and in case that the drag signal deviates from both the predetermined drag movement time and the drag movement distance, change the object selected by the first touch to a floating state from a time point of the deviation from both the predetermined drag movement time and the drag movement distance, and perform control such that a drag movement of the floating object starts in response to the drag signal.
Inventor(s): Jun-Ho SEO of Suwon-si (KR) for samsung electronics co., ltd., Seongyong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
Abstract: a method of operating a storage device for programming data into a flash memory before a surface mount technology (smt) process is provided. the method includes: comparing program states of first memory cells connected to a first word line with program states of second memory cells connected to a second word line; changing the program states of the second memory cells according to a result of the comparing; and multi-bit programming the data and changed state information into the second memory cells.
Inventor(s): Beomsig Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
Abstract: a storage device includes one or more ports that form an electrical connection with an external device, one or more physical functions including physical resources, and exposed through the one or more ports to communicate with the external device, a storage controller that controls an operation of the storage device, and communicates with the external device through the one or more ports and the one or more physical functions, nonvolatile memories controlled by the storage controller, and a first buffer memory controlled by the storage controller. when the storage device is accessed by the external device, the first buffer memory is used by the one or more ports and the one or more physical functions to temporarily store data for the external device.
Inventor(s): Youngil KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeongjae CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
Abstract: in a method of operating a storage device, first information associated with operation of the storage device is received from a host device. second information internally generated based on write requests, read requests, and operation of the storage device is received. program commands and read commands are transmitted to nonvolatile memories. suspension commands are transmitted to at least one of nonvolatile memories. the suspension commands are generated based on the first and second information and are used to temporarily stop program operations performed based on the program commands. the number and timing of transmitting the suspension commands are controlled based on the first and second information. in response to changing at least one of the write requests and the read requests, the number and timing of transmitting the suspension commands are adaptively changed.
Inventor(s): Youngjoo SEO of SUWON-SI (KR) for samsung electronics co., ltd., Youngdeok SEO of SUWON-SI (KR) for samsung electronics co., ltd., Sangkwon MOON of SUWON-SI (KR) for samsung electronics co., ltd., Hyunkyo OH of SUWON-SI (KR) for samsung electronics co., ltd., Hee-Tai OH of SUWON-SI (KR) for samsung electronics co., ltd., Heewon LEE of SUWON-SI (KR) for samsung electronics co., ltd., Jisoo KIM of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/10, G06F11/07
Abstract: an operation method of a storage controller, which is configured to control a nonvolatile memory device, includes initiating a first instance of a respective reliability operation for a respective memory block included in the nonvolatile memory device, the respective reliability operation including detecting a degradation level of the respective memory block and setting a respective skip reference value based on the detected degradation level; determining whether a respective number of consecutively skipped instances of the respective reliability operation is less than the respective skip reference value; and selectively skipping or performing a next instance of the respective reliability operation based on the determination result.
Inventor(s): Yunho YOUM of Suwon-si (KR) for samsung electronics co., ltd., Yongmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungho LEE of Suwon-si (KR) for samsung electronics co., ltd., Jiman JEONG of Suwon-si (KR) for samsung electronics co., ltd., Myungsik CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/22
Abstract: a storage device is provided. the storage device includes: a first memory configured to store a plurality of pieces of debug information; and a controller configured to: check an access level of target debug information among the plurality of pieces of debug information according to a debug information read command provided by a host device; and perform a security operation for the target debug information based on the access level of the target debug information.
Inventor(s): Sooyoung JI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/0862, G06F12/02
Abstract: a storage device comprising a nonvolatile memory device, and a storage controller configured to control the nonvolatile memory device wherein the storage controller is configured to, detect a logical address pattern repeatedly requested by a host, divide the logical address pattern into input logical addresses and predictive logical addresses, and generate a reproduction model for generating reproduction data corresponding to the predictive logical addresses in the data pattern when the predictive logical addresses are input using machine learning, and in response to a read request for the input logical addresses from the host, predict the predictive logical addresses using the input logical addresses, generate the reproduction data by inputting the predictive logical addresses into the reproduction model, and prefetch the generated reproduction data to a buffer memory included in the storage controller.
Inventor(s): Oscar P. PINTO of San Jose CA (US) for samsung electronics co., ltd., William MARTIN of Roseville CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F12/14, G06F21/62
Abstract: provided are systems, methods, and apparatuses for managing memory on a computational storage device is described. the method can include: receiving, by a controller, a command specifying an amount of computational resources and an amount of memory resources associated with a program; and processing the command by the controller, wherein the processing includes dynamically assigning a portion of one or more computational resources and assigning a portion of one or more memory resources based on the command for use by the program.
Inventor(s): Jangsu LEE of Suwon-si (KR) for samsung electronics co., ltd., Jehun JEON of Suwon-si (KR) for samsung electronics co., ltd., Jiseung JEONG of Suwon-si (KR) for samsung electronics co., ltd., Inkyu CHOI of Suwon-si (KR) for samsung electronics co., ltd., GyuBum HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F16/33
Abstract: disclosed is an entity linking method. a method includes: extracting an entity from an input context including text stored in a memory; obtaining candidate entities corresponding to, and based on, the extracted entity; determining a keyword based on the input context; generating keyword-based entity information based on the keyword and based on the extracted entity; and determining a top-matching entity corresponding to the entity based on the keyword-based entity information and the plurality of candidate entities.
Inventor(s): Ji-hun PARK of Seoul (KR) for samsung electronics co., ltd., Myung-Jae KIM of Suwon-si (KR) for samsung electronics co., ltd., Young-jun RYU of Suwon-si (KR) for samsung electronics co., ltd., Jang-ho JIN of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F16/683, G06F3/16, G06F16/638, G06F16/9535, G10L19/018, G11B27/10, G11B27/34
Abstract: a background music providing method includes: based on a user command for executing a content recognition mode being received, obtaining a data corresponding to the content, reproduced on the display apparatus, in the content recognition mode; transmitting the obtained data to an external source; obtaining information corresponding to the content based on the data from the external source; and displaying a result ui corresponding to the obtained information on the display apparatus.
Inventor(s): Younsung CHU of Suwon-si (KR) for samsung electronics co., ltd., Jisoo KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F21/57, G06F21/79
Abstract: provided is a system including a memory device including an interface configured to receive a measurement value generation request signal from a host and transmit a first measurement value and a second measurement value to the host, attester firmware configured to receive measurement values for a plurality of pieces of firmware, a bootloader configured to perform booting, a first register configured to record a first measurement value of the bootloader, and a second register configured to record a second measurement value for the attester firmware in response to the first measurement value being recorded, and the host including processing circuitry configured to receive the first measurement value and the second measurement value, and determine whether to falsify the bootloader or the attester firmware based on at least one of (1) the first measurement value and first reference values or (2) the second measurement value and second refence values.
Inventor(s): Mostafa EL-KHAMY of San Diego CA (US) for samsung electronics co., ltd., Minsu CHO of New York NY (US) for samsung electronics co., ltd., Kee-Bong SONG of San Diego CA (US) for samsung electronics co., ltd.
IPC Code(s): G06N3/0442, G06N3/086, G06N3/092
Abstract: a system and a method are disclosed for performing a neural architecture search. the method includes sampling a discrete network search space a first time, determining a differential architecture network sampled from a super-network using continuous relaxation of the discrete network search space over operators in the super-network, calculating a reward based on a proxy accuracy or a proxy complexity of the differential architecture network, updating a distribution of the discrete network search space based on the reward, and determining an updated differential architecture network based on the reward.
Inventor(s): Moonkyu SONG of Suwon-si (KR) for samsung electronics co., ltd., Hanju JE of Suwon-si (KR) for samsung electronics co., ltd., Yongjoo KWON of Suwon-si (KR) for samsung electronics co., ltd., Joohwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Junseo LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N20/00
Abstract: provided is a learning data generation method including selecting first data and second data, each of the first data and the second data having a similarity to registered biometric data that is greater than or equal to a first threshold, determining a matching degree between the first data and the second data, and generating learning data based on matching the first data to the second data in response to a determination that the matching degree is greater than or equal to a second threshold.
Inventor(s): Kwanki AHN of Suwon-si (KR) for samsung electronics co., ltd., Saeeun CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06Q30/0601
Abstract: a computing device obtains first metadata information related to a plurality of items of content and content viewing history information related to a user, generates a first feature vector for the user based on second metadata information related to at least one item of content viewed by the user in the content viewing history information related to the user, generates a plurality of second feature vectors, each of the plurality of second feature vectors corresponding to one of the plurality of items of content based on the first metadata information related to the plurality of items of content, and generate a recommendation including at least one item of content to the user, among the plurality of items of content, based on a result of a comparison between first feature vector for the user and the plurality of second feature vectors of the plurality of items of content.
Inventor(s): Taewon DO of Suwon-si (KR) for samsung electronics co., ltd., Yongtae KIM of Suwon-si (KR) for samsung electronics co., ltd., Hoonjae LEE of Suwon-si (KR) for samsung electronics co., ltd., Gautam TUSHAR of Suwon-si (KR) for samsung electronics co., ltd., Hyeyoung JUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T3/4046, G06T5/50
Abstract: an electronic device is provided. the electronic device includes memory, a camera module, a communication module, and at least one processor operatively connected to the memory, the camera module, and the communication module. the memory, when executed by the at least one processor, cause the electronic device to establish a call connection with a network based on the communication module, identify a first image captured based on the camera module, identify first information associated with a first bitrate corresponding to the first image, based on a communication environment between the network and the electronic device, identify a second image corresponding to the first image output from an artificial intelligence model for down-scaling, trained to receive information associated with a high-resolution image and a bitrate as an input value to output a low-resolution image, by inputting the first image and the first information to the artificial intelligence model, and transmit the second image through the call connection.
Inventor(s): Aleksei Aleksandrovich IVAKHNENKO of Moscow (RU) for samsung electronics co., ltd., Polina Vladimirovna KARPIKOVA of Moscow (RU) for samsung electronics co., ltd., Anastasiia Sergeevna IASHCHENKO of Moscow (RU) for samsung electronics co., ltd., Andrei Nikolaevich SPIRIDONOV of Moscow (RU) for samsung electronics co., ltd., Ekaterina Yurievna RADIONOVA of Moscow (RU) for samsung electronics co., ltd., Riccardo FABBRICATORE of Moscow (RU) for samsung electronics co., ltd., Leonid Igorevich KOSTIUSHKO of Moscow (RU) for samsung electronics co., ltd.
IPC Code(s): G06T5/60
Abstract: a system for obtaining output images having a quality index selectable by a user includes an electronic device including at least one processor and a memory storing input images and a set of generative artificial neural networks (gans), the at least one processor being configured to perform artificial neural network operations. each gan is selectable by the user from the set of gans stored in the memory, for obtaining an image with predefined quality index, each gan is pre-trained and includes a plurality of earlier exit branches each of which is connected after each calculating module, each earlier exit branch contains as many calculating modules as remain in the backbone from a connection point of that earlier exit branch to a backbone exit, and each calculating module of each earlier exit branch performs a same function as a corresponding remaining calculating module in the backbone.
20240177278.Restoring Images Using Deconvolution_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Changgeng Liu of San Jose CA (US) for samsung electronics co., ltd., Luxi Zhao of Toronto (CA) for samsung electronics co., ltd., Ziwen Jiang of Sunnyvale CA (US) for samsung electronics co., ltd., Abdelrahman Abdelhamed of Toronto (CA) for samsung electronics co., ltd., Abhijith Punnappurath of North York (CA) for samsung electronics co., ltd., Ye Zhao of Sunnyvale CA (US) for samsung electronics co., ltd., Ernest Rehmatulla Post of San Francisco CA (US) for samsung electronics co., ltd., Michael Brown of Toronto (CA) for samsung electronics co., ltd., Sajid Sadi of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06T5/00, G06T5/50
Abstract: in one embodiment, a method includes generating, from an accessed image, one or more image patches, and for each image patch: (1) accessing a set of point-spread functions (psfs), wherein each psf in the set of psfs corresponds to one of a plurality of points in the image patch; (2) generating a set of deconvolved image patches by deconvolving the image patch with each psf from the set of psfs for that patch; (3) determining, for each of one or more portions of the image patch, a set of weights, wherein each weight in the set of weights is associated with one of the deconvolved image patches; and (4) generating a restored image patch by interpolating the set of deconvolved image patches based on the set of weights.
Inventor(s): Sol NAMKUNG of Suwon-si (KR) for samsung electronics co., ltd., Seungwon CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jongseong CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T5/00, G06F3/14, G06V10/50, G06V10/60, G06V10/75
Abstract: an image processing apparatus includes a luminance calculator configured to convert input image data into luminance image data including luminance values of a plurality of pixels, a noise calculator configured to generate sum values obtained by adding noise values corresponding to neighboring pixels around a target pixel of the plurality of pixels, to the luminance values of the neighboring pixels, a tone mapper configured to generate first and second mapping data by applying a first tone curve and a second tone curve to a luminance value of the target pixel and the sum values of the neighboring pixels, a characteristic value calculator configured to calculate first and second weights for the first and second mapping data, a gain blender configured to adjust the first and second weights and generate output image data, and a display device configured to display the output image data.
Inventor(s): Mostafa EL-KHAMY of San Diego CA (US) for samsung electronics co., ltd., Hai SU of San Diego CA (US) for samsung electronics co., ltd., Qingfeng LIU of San Diego CA (US) for samsung electronics co., ltd.
IPC Code(s): G06T7/12
Abstract: disclosed is a method including receiving, in a semantic segmentation network, input data from a plurality of frames, computing a ground truth label on the plurality of frames, generating a ground truth temporal semantic boundary map from the ground truth label on the plurality of frames, generating a predicted temporal semantic boundary map based on an output of the input data, and determining a loss based on the ground truth temporal semantic boundary map and the predicted temporal semantic boundary map.
Inventor(s): Yoonjung CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung KANG of Suwon-si (KR) for samsung electronics co., ltd., Chaekyung LEE of Suwon-si (KR) for samsung electronics co., ltd., Seungyong LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T11/00, G06F1/16, G06F3/01, G06T7/70, G06V10/764, G10L25/51, H04R1/02
Abstract: according to an embodiment, a processor of a wearable device may identify a first visual object among a plurality of visual objects in a first image frame displayed through the display. the processor may identify, based on identifying the first visual object, a second visual object associated with the first visual object. the processor may obtain, after the second visual object is identified, a second image frame via the camera. the processor may modify at least a portion of the second image frame in which at least one of other visual objects of the plurality of visual objects different from the first visual object and the second visual object is removed. the processor may display, via the display, the second image frame including the modified portion.
Inventor(s): Jinwoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Nahyup KANG of Suwon-si (KR) for samsung electronics co., ltd., Jiyeon KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T15/50, G06T7/73, G06T11/00, G06T15/06
Abstract: an electronic device includes: one or more processors configured to: extract, using an implicit neural representation (inr) model, a global geometry feature and information indicating whether a point is on a surface from a viewpoint and a view direction corresponding to an image pixel corresponding to a two-dimensional (2d) scene at the viewpoint within a field of view (fov); determine an object surface position corresponding to the viewpoint and the view direction and normal information of the object surface position based on the information indicating whether the point is on the surface; estimate, using an albedo estimation model, albedo information independent of the view direction from the global geometry feature, the object surface position, and the normal information; and estimate, using a specular estimation model, specular information dependent on the view direction from the global geometry feature, the object surface position, the normal information, and the view direction.
Inventor(s): Jinsuk LEE of Suwon-si (KR) for samsung electronics co., ltd., Junsik JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T19/00, G02B27/01, G06F3/01, G06T7/70, G06V40/10
Abstract: an electronic device is provided. the electronic device may comprise at least one processor, a tracking sensor, a communication circuit, and a display. the at least one processor may obtain first tracking information for a movement of a user through the tracking sensor. the at least one processor may receive, from an external electronic device through the communication circuit, image property information to request a rendering. the at least one processor may identify a tracking property of a first image based on the image property information. the at least one processor may determine a rendering start timing for the first image having the tracking property based on a rendering processing time. the at least one processor may transmit, to the external electronic device through the communication circuit, a message including the image property information of the first image and the first tracking information, based on the rendering start timing for the first image. the at least one processor may receive, from the external electronic device through the communication circuit, a first rendering image rendered based on the image property information of the first image and the first tracking information. the at least one processor may display, through the display, a second rendering image generated based on the first rendering image. the image property information of the first image may comprise information on whether an object included in the first image is rendered based on tracking information.
Inventor(s): Xiansong SONG of Beijing (CN) for samsung electronics co., ltd., Lei Cao of Beijing (CN) for samsung electronics co., ltd., Li Zuo of Beijing (CN) for samsung electronics co., ltd., Jaekeun Na of Suwon-si (KR) for samsung electronics co., ltd., Wei Wen of Beijing (CN) for samsung electronics co., ltd., Changwei Wang of Beijing (CN) for samsung electronics co., ltd., Mengmeng Bai of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): G06V10/80, G06T7/194, G06V10/26
Abstract: a method performed by an electronic apparatus, includes: determining a local frame sequence from a video; obtaining a feature map sequence of the local frame sequence by encoding the local frame sequence; determining a feature flow sequence of the local frame sequence based on the feature map sequence of the local frame sequence and a mask image sequence regarding an object to be removed, the mask image sequence being corresponding to the feature map sequence; obtaining an updated feature map sequence of the local frame sequence, by performing, based on the feature flow sequence, feature fusion between adjacent feature maps in the feature map sequence; and obtaining a processed local frame sequence, by decoding the updated feature map sequence of the local frame sequence.
Inventor(s): Ho-Ik CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jahoo KOO of Suwon-si (KR) for samsung electronics co., ltd., Youngwan SEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V20/56, G06T7/70
Abstract: a method performed by one or more processors includes: obtaining an original intensity map including original elements having respective signal intensities with respect to a road surface, the signal intensities based on sensing of a vision sensor arranged on a moving object that is moving on a road including the road surface, wherein each of the original elements has a respective local neighborhood of neighboring original elements; generating a local intensity map by determining local values respectively corresponding to the original elements of the original intensity map, wherein the local values are determined based on the original elements in the respectively corresponding local neighborhoods; generating a normalized intensity map by normalizing the original intensity map based on the local intensity map; and recognizing the road surface based on the normalized intensity map.
Inventor(s): Wei LIU of Beijing (CN) for samsung electronics co., ltd., Lei YANG of Beijing (CN) for samsung electronics co., ltd., Lufen TAN of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): G10L21/0308, G10L25/60
Abstract: the present disclosure provides a method performed by an electronic device and an apparatus. a method performed by an electronic device may include: obtaining an audio signal comprising a speech signal uttered by at least one sound source; determining a target audio segment of the audio signal, wherein the target audio segment is determined based on a speech quality of at least one audio segment, wherein the at least audio segment is divided from the audio signal; and performing speech separation on the audio signal based on the target audio segment to obtain at least one separated speech signal corresponding to the at least one sound source.
Inventor(s): Chinam Kim of Suwon-si (KR) for samsung electronics co., ltd., Tae-Kyeong Ko of Suwon-si (KR) for samsung electronics co., ltd., Cholmin Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C7/10
Abstract: a semiconductor memory system includes a memory device including plural banks, and a memory controller that generates an offset address for a first bank among the plural banks and a command indicating the offset address, based on a first request. the memory device generates a first address by adding the offset address to a base address for the first bank, according to the command, and performs a memory operation on the first address of the first bank according to the command.
Inventor(s): Yunseok Yang of Suwon-si (KR) for samsung electronics co., ltd., Eungchang Lee of Suwon-si (KR) for samsung electronics co., ltd., Seula Ryu of Suwon-si (KR) for samsung electronics co., ltd., Minhwan An of Suwon-si (KR) for samsung electronics co., ltd., Yunkyeong Jeong of Suwon-si (KR) for samsung electronics co., ltd., Chul-Hwan Choo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C7/10, G11C5/06
Abstract: a memory device includes a base die that includes a data signal bump configured to receive a data signal, a first memory stack that includes first memory dies sequentially stacked on the base die, and a second memory stack that includes second memory dies sequentially stacked on the base die and spaced from the first memory stack in a direction parallel to an upper surface of the base die. the base die is configured to selectively provide the data signal received through the data signal bump to one of the first memory stack or the second memory stack based on a selection signal.
Inventor(s): Byoungkon JO of Suwon-si (KR) for samsung electronics co., ltd., Gyesik OH of Suwon-si (KR) for samsung electronics co., ltd., Wangyong IM of Suwon-si (KR) for samsung electronics co., ltd., Duk Sung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jangseok CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C7/10, G11C5/06
Abstract: a semiconductor memory device, includes, a cell array including a plurality of memory banks, a command decoder configured to decode a read/write command, a read command, and a write command that are input from outside of the semiconductor memory devide, an address decoder receiving a read address and a write address, an input receiver configured to transmit write data input through a write data pad to a global input/output driver of a memory bank corresponding to the write address, and an output driver configured to transmit read data output from an input/output sense amplifier of a memory bank corresponding to the read address to a read data pad, wherein the write data is input via the write data pad in a single data rate method and transmitted to the global input/output driver without deserialization processing, and the read data is transmitted from the input/output sense amplifier to the read data pad without serialization processing. in some embodiments, the semiconductor memory device is electrically and physically coupled to a central processing unit by hybrid copper bonding.
Inventor(s): Su Chang Jeon of Suwon-si (KR) for samsung electronics co., ltd., Woohyun Kang of Suwon-si (KR) for samsung electronics co., ltd., Seungkyung Ro of Suwon-si (KR) for samsung electronics co., ltd., Sangkwon Moon of Suwon-si (KR) for samsung electronics co., ltd., Heewon Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/408, G06F3/06
Abstract: disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. the address decoder is further configured to provide the compensation read voltage to the selected word line.
Inventor(s): MI JI JANG of SUWON-SI (KR) for samsung electronics co., ltd., YOUNG HUN SEO of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4091
Abstract: a memory device including a memory cell array which includes a plurality of memory cells connected to each of a plurality of bit lines and word lines, a first bit line sense amplifier electrically connected to a first bit line through a first memory cell and a first connecting wiring and a second bit line sense amplifier electrically connected to a second bit line through a second connecting wiring having a length different from that of the first connecting wiring. a first compensation load of the first bit line and a second compensation load of the second bit line are adjusted to equalize rc loads of the first bit line and the second bit line.
Inventor(s): Seungchul JUNG of Suwon-si (KR) for samsung electronics co., ltd., Seok Ju YUN of Suwon-si (KR) for samsung electronics co., ltd., Soon-Wan KWON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/412, H03K19/20, H03K19/21
Abstract: an apparatus includes a static random access memory (sram) cell including a first inverter and a second inverter, and a third inverter including a first inverter transistor and a second inverter transistor. an output terminal of the first inverter is connected to a source terminal of the second inverter transistor.
Inventor(s): Soyeon CHOI of SUWON-SI (KR) for samsung electronics co., ltd., Zhe WU of SUWON-SI (KR) for samsung electronics co., ltd., Chungman KIM of SUWON-SI (KR) for samsung electronics co., ltd., Seunggeun YU of SUWON-SI (KR) for samsung electronics co., ltd., Jabin LEE of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G11C13/00
Abstract: an operating method of a self-selecting memory device, includes an operation of applying a first write pulse corresponding to a first state to a first memory cell during a first pulse width, and an operation of applying a second write pulse corresponding to a second state to a second memory cell during a second pulse width, wherein the first write pulse and the second write pulse have substantially opposite polarities, wherein the first pulse width is longer than the second pulse width.
Inventor(s): Jesung Kim of Suwon-si (KR) for samsung electronics co., ltd., Haemin Park of Suwon-si (KR) for samsung electronics co., ltd., Heejae Nam of Suwon-si (KR) for samsung electronics co., ltd., Junggeun Shin of Suwon-si (KR) for samsung electronics co., ltd., Junho Yoon of Suwon-si (KR) for samsung electronics co., ltd., Jungho Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/304, B23K26/53, H01L21/683, H01L21/78
Abstract: a wafer dicing method includes preparing a wafer having a plurality of device formation areas and a scribe lane area defining the plurality of device formation areas, forming a plurality of semiconductor devices in the plurality of device formation areas of the wafer, forming, in the scribe lane area, a plurality of first grooves partially passing through at least a portion of the wafer in a vertical direction, forming a plurality of second grooves by planarizing lower surfaces of the plurality of first grooves, forming one or more internal cracks in the wafer by radiating a laser beam along lower surfaces of the plurality of second grooves, and separating the plurality of semiconductor devices from each other along the one or more internal cracks.
Inventor(s): Sangjine Park of Suwon-si (KR) for samsung electronics co., ltd., Jihwan Park of Suwon-si (KR) for samsung electronics co., ltd., Kuntack Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/67
Abstract: provided is a substrate processing apparatus including a processing container having a processing space, a substrate support configured to support a substrate, a fluid supplier configured to supply a processing fluid in a supercritical state to the processing space, a shower head assembly configured to diffuse the processing fluid, a first laser portion configured to measure a horizontal alignment between the processing container and the shower head assembly, a second laser portion configured to measure a vertical alignment between the processing container and the shower head assembly, and a controller configured to correct the position of one of the substrate, the shower head assembly, and the processing container, based on the measured horizontal and vertical alignments, wherein the first and second laser portions are configured to be positioned within the processing container and to move above the substrate.
Inventor(s): Hyunwoong Choi of Suwon-si (KR) for samsung electronics co., ltd., Kongwoo Lee of Suwon-si (KR) for samsung electronics co., ltd., Beomsoo Hwang of Suwon-si (KR) for samsung electronics co., ltd., Myungki Song of Suwon-si (KR) for samsung electronics co., ltd., Kyusang Lee of Suwon-si (KR) for samsung electronics co., ltd., Jinhyuk Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/67, H01L21/677, H01L21/68
Abstract: a semiconductor processing device includes a stage configured to receive a bare wafer placed thereon, a laser sensor located above the stage in a vertical direction, orthogonal to an upper surface of the bare wafer, a camera sensor located above the stage in a first direction, a lighting device radiating an imaging region imaged by camera sensor with light, and a controller, configured to rotate the bare wafer using the stage, obtain a plurality of sub-images of the bare wafer captured by the camera sensor to generate an original image of the bare ware, and detect a first defect of the bare wafer using the original image, wherein the controller is configured to detect a second defect of the bare wafer by measuring a distance between the laser sensor and the bare wafer, while rotating the bare wafer using the stage.
20240178061.INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Donghee SEO of Suwon-si (KR) for samsung electronics co., ltd., Rakhwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeongik KIM of Suwon-si (KR) for samsung electronics co., ltd., Chunghwan SHIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/768, H01L23/522, H01L23/532
Abstract: an integrated circuit device includes a middle insulating structure on a substrate, a first contact structure passing through the middle insulating structure and extending by a first vertical length from a top surface of the middle insulating structure toward the substrate, and a second contact structure passing through the middle insulating structure. the middle insulating structure may have a top surface extending in a lateral direction at a first vertical level. the second contact structure may extend by a second vertical length greater than the first vertical length from the top surface of the middle insulating structure toward the substrate. the first contact structure may have a first top surface extending planar along an extension line of the top surface of the middle insulating structure. the second contact structure may have a second top surface, which may be convex in a direction away from the substrate.
Inventor(s): Seungju HWANG of Suwon-si (KR) for samsung electronics co., ltd., Shigenobu Maeda of Suwon-si (KR) for samsung electronics co., ltd., Myoungkyu PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/8234, H01L21/762, H01L27/088
Abstract: a method of manufacturing a semiconductor device includes: forming a plurality of first mandrel patterns at a first mandrel pitch on a substrate; forming a first fin group and a first dummy fin group by patterning the substrate, wherein the first fin group is adjacent to the first dummy fin group in a first direction; and removing the first dummy fin group, wherein the first fin group includes a first fin and a second fin adjacent to each other and arranged at a first fin pitch in the first direction. the first dummy fin group includes a first dummy fin and a second dummy fin adjacent to each other and arranged at the first fin pitch in the first direction. the second fin and the first dummy fin, which is adjacent to the second fin, are arranged at a second fin pitch that is greater than the first fin pitch.
Inventor(s): KYOUNG LIM SUK of Suwon-si (KR) for samsung electronics co., ltd., DONGKYU KIM of Suwon-si (KR) for samsung electronics co., ltd., JI HWANG KIM of Suwon-si (KR) for samsung electronics co., ltd., HYEONJEONG HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L21/56, H01L23/00
Abstract: disclosed are semiconductor packages and their fabrication methods. the semiconductor package comprises a lower semiconductor chip on a first redistribution substrate and including a through via, a lower molding layer on the first redistribution substrate and surrounding the lower semiconductor chip, a lower post on the first redistribution substrate and laterally spaced apart from the lower semiconductor chip, an upper semiconductor chip on the lower semiconductor chip and coupled to the through via, an upper molding layer on the lower molding layer and surrounding the upper semiconductor chip, an upper post on the lower molding layer and laterally spaced apart from the upper semiconductor chip, and a second redistribution substrate on the upper molding layer and coupled to the upper post. a top surface of the lower molding layer is at a level higher than that of a top surface of the lower semiconductor chip.
20240178117.SEMICONDUCTOR PACKAGES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Myung Sam KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L23/15, H01L25/065
Abstract: a semiconductor package comprises a first redistribution layer including a first conductive pattern; a connection module on an upper surface of the first redistribution layer; a glass core extending around the connection module on the upper surface of the first redistribution layer; a through via extended in the glass core; a second insulating layer on the glass core, wherein a portion of the second insulating layer is in the through via; a second redistribution layer on an upper surface of the glass core, wherein the second redistribution layer includes a via pad; and a first semiconductor chip and a second semiconductor chip space apart from each other on an upper surface of the second redistribution layer, wherein the via pad is in contact with the through via, and wherein the first semiconductor chip and the second semiconductor chip are electrically connected to each other through the connection module.
20240178122.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kyung Don MUN of Suwon-si (KR) for samsung electronics co., ltd., Sangjin BAEK of Suwon-si (KR) for samsung electronics co., ltd., Kyoung Lim SUK of Suwon-si (KR) for samsung electronics co., ltd., Shang-Hoon SEO of Suwon-si (KR) for samsung electronics co., ltd., Inhyung SONG of Suwon-si (KR) for samsung electronics co., ltd., Yeonho JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L23/31, H01L25/10
Abstract: a semiconductor package, including a first redistribution substrate, a semiconductor chip on the first redistribution substrate, a connection structure on the first redistribution substrate and spaced apart from the semiconductor chip, the connection structure including a connection substrate and a post on the connection substrate, a second redistribution substrate on the semiconductor chip and the connection structure, and a molding layer between the first redistribution substrate and the second redistribution substrate, the molding layer encapsulating the semiconductor chip and the connection structure, wherein the connection substrate includes a conductive pattern that vertically penetrates the connection substrate, the post is in contact with a top surface of the conductive pattern, and a width of the post is less than a width of the connection substrate.
Inventor(s): Sunoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Shaofeng Ding of Suwon-si (KR) for samsung electronics co., ltd., Jeonghoon Ahn of Suwon-si (KR) for samsung electronics co., ltd., Jaehee Oh of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/522, H01L21/768, H01L23/00, H01L23/48, H01L23/528
Abstract: a semiconductor device includes: a semiconductor substrate; an integrated circuit layer disposed on the semiconductor substrate; a first metal wiring layer to an n-th metal wiring layer sequentially disposed on the semiconductor substrate and the integrated circuit layer, wherein n is a positive integer; a plurality of wiring vias connecting the first to n-th metal wiring layers to each other, and a through-via extending in a vertical direction from a via connection pad, which is any one of the first metal wiring layer to the n-th metal wiring layer, toward the semiconductor substrate and penetrating the semiconductor substrate, wherein the via connection pad is a capping-type via connection pad formed on an upper surface of the through-via.
20240178138.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yong Jin SHIN of Suwon-si (KR) for samsung electronics co., ltd., Dong Woo KIM of Suwon-si (KR) for samsung electronics co., ltd., Mun Jun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jun Kwan KIM of Suwon-si (KR) for samsung electronics co., ltd., On Yu BAE of Suwon-si (KR) for samsung electronics co., ltd., Kyoung Min WOO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/528, H01L21/768, H01L23/532
Abstract: a semiconductor device includes a substrate having a cell region and a peripheral region surrounding the cell region, a lower electrode extending in a vertical direction on the cell region of the substrate, an upper electrode surrounding a sidewall and a top surface of the lower electrode, a capacitor dielectric layer disposed between the lower electrode and the upper electrode, a first barrier layer disposed on the upper electrode, the first barrier layer in contact with each of a sidewall and a top surface of the upper electrode, a first interlayer insulating layer covering the first barrier layer, the first interlayer insulating layer including a material different from the first barrier layer, and a first contact penetrating through the first barrier layer and the first interlayer insulating layer in the vertical direction, the first contact connected to the upper electrode.
Inventor(s): Keunwook SHIN of Suwon-si (KR) for samsung electronics co., ltd., Hyeonjin SHIN of Suwon-si (KR) for samsung electronics co., ltd., Sangwon KIM of Suwon-si (KR) for samsung electronics co., ltd., Changhyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Baekwon PARK of Suwon-si (KR) for samsung electronics co., ltd., Kyung-Eun BYUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/532
Abstract: an interconnect structure may include a first dielectric layer including a trench, a first conductive layer in the trench and including a plurality of first graphene layers stacked in a direction from an inner surface of the trench toward a center of the trench, a second dielectric layer on the first dielectric layer and including a through hole extending to the trench, and a second conductive layer in the through hole.
Inventor(s): Jaeho KIM of Suwon-si (KR) for samsung electronics co., ltd., Woosung YANG of Suwon-si (KR) for samsung electronics co., ltd., Joonyoung KWON of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Sukkang SUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H10B41/50, H10B43/50
Abstract: a semiconductor device includes a first substrate structure including a substrate, circuit elements on the substrate, a first interconnection structure on the circuit elements, and first metal bonding layers on the first interconnection structure; and a second substrate structure connected to the first substrate structure, and the second substrate structure includes: a plating layer; gate electrodes stacked and spaced apart from each other in a first direction below the plating layer; channel structures penetrating through the gate electrodes and extending in the first direction; a separation region penetrating through the gate electrodes and extending in a second direction; a second interconnection structure below the gate electrodes and the channel structures; second metal bonding layers below the second interconnection structure and connected to the first metal bonding layers; and dummy pattern layers between the second metal bonding layers, extending in the second direction, and including an insulating material.
Inventor(s): DONGHYEON JANG of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L21/48, H01L21/56, H01L23/498, H01L25/10, H01L25/18, H10B80/00
Abstract: a semiconductor package includes a lower redistribution wiring layer having first redistribution wirings stacked in at least two layers, a semiconductor chip disposed on the lower redistribution wiring layer and electrically connected to the first redistribution wirings, a sealing member covering the semiconductor chip on the lower redistribution wiring layer, a plurality of through vias penetrating the sealing member and electrically connected to the first redistribution wirings, and an upper redistribution wiring layer disposed on the sealing member and having second redistribution wirings electrically connected to the plurality of through vias. each of the first redistribution wirings includes a barrier layer pattern, a seed layer pattern and a plating pattern sequentially stacked. from a plan view, a sidewall of the barrier layer pattern extends laterally beyond a sidewall of the seed layer pattern.
Inventor(s): Youngja Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00
Abstract: in a method of manufacturing an electronic device, a substrate having a plurality of mounting regions on which first electronic components and second electronic components are mounted is provided, the substrate having a first surface and a second surface opposite the first surface. first electronic components are mounted on the first surface of the board via first bumps. at least one vapor shielding cover is positioned on the first surface of the substrate to cover at least one of the first electronic components. second electronic components are mounted on the second surface of the substrate via second bumps. the second bumps are soldered with a vapor phase reflow process and during the vapor phase reflow process, the at least one vapor shielding cover is configured to prevent a heat transfer fluid in a vapor state from moving to the at least one first electronic component covered by the at least one vapor shielding cover.
20240178185.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): DONGKYU KIM of Suwon-si (KR) for samsung electronics co., ltd., KYUNG DON MUN of Suwon-si (KR) for samsung electronics co., ltd., KYOUNG LIM SUK of Suwon-si (KR) for samsung electronics co., ltd., HYEONJEONG HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/373, H01L23/538, H10B80/00
Abstract: disclosed is a semiconductor package comprising a lower circuit part having a first region and a second region horizontally offset from each other and including a connection structure within the first region and a logic chip within the second region, a memory structure that overlaps the connection structure in a vertical direction, and a thermal radiation structure that overlaps the logic chip in the vertical direction. the logic chip and the memory structure are spaced apart in a horizontal direction parallel to a top surface of the logic chip.
Inventor(s): Myung-Sung KANG of Suwon-si (KR) for samsung electronics co., ltd., Kyong Hwan KOH of Suwon-si (KR) for samsung electronics co., ltd., Jin-Woo PARK of Suwon-si (KR) for samsung electronics co., ltd., Chung Sun LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyeon Jun JIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/31, H01L23/48, H01L23/498
Abstract: semiconductor packages and methods of fabricating the same are provided. the semiconductor package includes a first package substrate including a first area, a first semiconductor chip mounted on the first area, a second package substrate disposed on an upper surface of the first semiconductor chip and including a second area and a first hole penetrating through the second area, a second semiconductor chip mounted on the second area, a connection member electrically connecting the first package substrate and the second package substrate and between the first package substrate and the second package substrate, and a mold film covering the second semiconductor chip on the second package substrate, filling the first hole, and covering the first semiconductor chip and the connection member on the first package substrate.
Inventor(s): Jihun JUNG of Suwon-si (KR) for samsung electronics co., ltd., Unbyoung KANG of Suwon-si (KR) for samsung electronics co., ltd., Yeongkwon KO of Suwon-si (KR) for samsung electronics co., ltd., Seunghun SHIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/31, H01L23/48, H10B80/00
Abstract: a semiconductor chip including a semiconductor substrate having an active surface and a non-active surface opposite to each other, a plurality of through electrodes passing through the semiconductor substrate, a plurality of wiring structures on the active surface and electrically connected to the plurality of through electrodes, an inter-wire insulating layer surrounding the plurality of wiring structures, a plurality of front chip connection pads electrically connected to the plurality of wiring structures, a front insulating layer surrounding the plurality of front chip connection pads, on the inter-wire insulating layer, a plurality of rear chip connection pads disposed on the non-active surface and electrically connected to the plurality of through electrodes, and a rear insulating layer surrounding the plurality of rear chip connection pads, on the non-active surface, wherein the front insulating layer includes a cover insulating portion covering a side surface of the inter-wire insulating layer may be provided.
Inventor(s): Junsik HWANG of Hwaseong-si (KR) for samsung electronics co., ltd., Seogwoo HONG of Yongin-si (KR) for samsung electronics co., ltd., Kyungwook HWANG of Seoul (KR) for samsung electronics co., ltd., Hyunjoon KIM of Seoul (KR) for samsung electronics co., ltd., Joonyong PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/075, H01L25/16, H01L33/50
Abstract: according to an aspect of an embodiment, provided is a micro semiconductor chip transferring substrate including: a mold including a plurality of recesses formed to be recessed in a certain depth from an upper surface; and a surface energy reduction pattern formed in region between the plurality of recesses, on the upper surface, the surface energy reduction pattern including a plurality of uneven patterns. when the micro semiconductor chips are aligned by a wet alignment method, by such surface energy reduction pattern, sliding of the micro semiconductor chips toward the inside of the recesses may be improved.
Inventor(s): Byeongchan KIM of Suwon-si (KR) for samsung electronics co., ltd., Un-Byoung KANG of Suwon-si (KR) for samsung electronics co., ltd., Jumyong PARK of Suwon-si (KR) for samsung electronics co., ltd., Dongjoon OH of Suwon-si (KR) for samsung electronics co., ltd., Jun Young OH of Suwon-si (KR) for samsung electronics co., ltd., Jeongil LEE of Suwon-si (KR) for samsung electronics co., ltd., Chungsun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/10, H01L23/00, H01L23/498
Abstract: a semiconductor device includes: a semiconductor layer including a wire and an electrical element; and a plurality of metal pads on a surface of the semiconductor layer, wherein the plurality of metal pads includes a first metal pad and a second metal pad, wherein the second metal pad is smaller in surface area or diameter on the surface of the semiconductor layer than the first metal pad, and wherein the second metal pad is between a first region of the surface of the semiconductor layer where the first metal pad is and a second region of the surface of the semiconductor layer where a surface metal density is zero (0).
Inventor(s): Changyeon Yu of Suwon-si (KR) for samsung electronics co., ltd., Pansuk Kwak of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/02, H01L21/02, H01L21/302, H01L21/768, H01L27/092, H01L29/06
Abstract: a semiconductor device includes a substrate, a p-well region, a first n-type metal oxide semiconductor (nmos) transistor provided in the p-well region, a second nmos transistor provided on the substrate, and a common body bias region provided between the first nmos transistor and the second nmos transistor and contacting both the p-well region and the substrate.
20240178225.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Ho-Jun KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyungjin PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/088, H01L21/8234
Abstract: a semiconductor device including a substrate; gate structures spaced apart from each other on the substrate, each gate structure including a gate electrode and a gate capping pattern; source/drain patterns on opposite sides of the gate structures; first isolation patterns that respectively penetrate adjacent gate structures; and a second isolation pattern that extends between adjacent source/drain patterns, and penetrates at least one gate structure, wherein each first isolation pattern separates the gate structures such that the gate structures are spaced apart from each other, the first isolation patterns are aligned with each other, and top surfaces of the first and second isolation patterns are each located at a level the same as or higher than a level of a top surface of the gate capping pattern.
Inventor(s): Munhyeon Kim of Hwaseong-si (KR) for samsung electronics co., ltd., Mingyu Kim of Hwaseong-si (KR) for samsung electronics co., ltd., Doyoung Choi of Hwaseong-si (KR) for samsung electronics co., ltd., Daewon Ha of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/092
Abstract: a semiconductor device is disclosed. the semiconductor device may include an active pattern on a substrate, source/drain patterns on the active pattern, a fence spacer on side surfaces of each of the source/drain patterns, a channel pattern interposed between the source/drain patterns, a gate electrode crossing the channel pattern and extending in a first direction, and a gate spacer on a side surface of the gate electrode. a first thickness of an upper portion of the fence spacer in the first direction may be greater than a second thickness of the gate spacer in a second direction crossing the first direction.
Inventor(s): Junsun HWANG of Suwon-si (KR) for samsung electronics co., ltd., Sewoong PARK of Suwon-si (KR) for samsung electronics co., ltd., JeongHo LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/118
Abstract: disclosed are a semiconductor device and a method of fabricating the same. the semiconductor device includes a substrate including a cell disposing region and a first block border region, a plurality of gate electrodes on the cell disposing region and extending to the first block border region in a first direction to be parallel to each other, the gate electrodes including a first and second gate electrode, which are adjacent to each other, and a first connection structure on the first block border region, wherein the first connection structure is configured to physically connect the first and second gate electrodes to each other.
Inventor(s): Suyong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaeyoung BAE of Suwon-si (KR) for samsung electronics co., ltd., Yunhwan JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, H04N25/76, H04N25/77, H04N25/78
Abstract: an image sensor device includes a first pixel that is located at a first row and a first column and comprising a first select transistor and is configured to output a first pixel signal through a first column line, and a second pixel that is located at a second row different from the first row and the first column and comprising a second select transistor and is configured to output a second pixel signal through a second column line. during a first time period, the first select transistor is turned on and the first pixel signal is output, and during a second time period, the second select transistor is turned on, and a first voltage is applied to the second column line through the second select transistor, the second time period including the first time period.
Inventor(s): Hojun CHANG of Suwon-si (KR) for samsung electronics co., ltd., Junhyuk Moon of Suwon-si (KR) for samsung electronics co., ltd., Youngho Jung of Suwon-si (KR) for samsung electronics co., ltd., Kyungwook Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
Abstract: an image sensor includes: a light filter; and a light detector that includes a plurality of pixels disposed on a lower portion of the light filter, the light detector being configured to detect light transmitted through the light filter. the light filter includes: a color filter that includes a plurality of red filters, a plurality of green filters, and a plurality of blue filters. the light filter includes: a plurality of multi-spectral filters disposed adjacent to and coplanar with the color filter, each of the plurality of multispectral filters including a plurality of band filters configured to transmit light in different wavelength bands. each of the plurality of band filters is configured to transmit light in a band filter wavelength range that is narrower than a wavelength range of the plurality of red filters, the plurality of green filters and the plurality of blue filters.
20240178252.IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seo Joo KIM of Suwon-si (KR) for samsung electronics co., ltd., Sung Hyuck CHO of Suwon-si (KR) for samsung electronics co., ltd., Young Chan KIM of Suwon-si (KR) for samsung electronics co., ltd., Seung Hyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Young Gu JIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
Abstract: in one embodiment, an image sensor includes unit pixels, each of the unit pixel including a first sub-pixel and a second sub-pixel adjacent to the first sub-pixel in a plan view of the image sensor; and a lens array including a first sub-lens area on the first sub-pixel of each unit pixel and a second sub-lens area on the second sub-pixel of each unit pixel. the first sub-lens area may include a first micro lens, and the second sub-lens area includes a second micro lens. in addition, the first micro lens may include a depression defined in a central area thereof.
20240178253.IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): JONGHYUN GO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
Abstract: an image sensor includes a substrate including an active region with source and drain regions, a source follower gate pattern on the active region, the drain and source regions being adjacent to first and second side surfaces of the source follower gate pattern, respectively, and a gate insulating layer between the active region and the source follower gate pattern. an upper portion of the active region includes a recess region, and the source follower gate pattern includes a body portion on the active region and a buried portion provided in the recess region and protruding below the body portion. a distance between the first and second side surfaces is a first length, and a distance between a center of the buried portion and the first side surface is a second length. the second length is greater than or equal to 0.1 times the first length and is less than 0.5 times the first length.
20240178255.IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Dae Hoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Yong Jun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, H01L23/00
Abstract: an image sensor includes a first substrate having a photoelectric conversion element. a first gate electrode is on a first side of the first substrate. a floating diffusion region is in the first substrate. a first wiring structure is on the first side and includes a first wiring layer and a first bonding pad. a second substrate has a third side that includes second and third gate electrodes. an impurity region is in the second substrate. a second wiring structure is on the third side and includes a second wiring layer and a second bonding pad directly contacting the first bonding pad. a fourth gate electrode is on a fourth side of the second substrate. a third wiring structure is on the fourth side and includes a third wiring layer. the floating diffusion region is connected to the impurity region through the first wiring structure and the second wiring structure.
20240178274.INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Gunho Jo of Suwon-si (KR) for samsung electronics co., ltd., Heesub Kim of Suwon-si (KR) for samsung electronics co., ltd., Seung Hyun Lim of Suwon-si (KR) for samsung electronics co., ltd., Bomi Kim of Suwon-si (KR) for samsung electronics co., ltd., Eunho Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L27/092, H01L29/423, H01L29/66, H01L29/775
Abstract: an integrated circuit device includes a first fin-type active region and a second fin-type active region, a device isolation film adjacent to each of the first and second fin-type active regions, a first gate line on the first fin-type active region, a second gate line on the second fin-type active region, and a gate cut insulating pattern separating the first and second gate lines, wherein the device isolation film includes a first local isolation portion and a second local isolation portion, which are separating the first fin-type active region from the second fin-type active region to be apart from each other with the gate cut insulating pattern therebetween.
Inventor(s): Byunghoon Cho of Yongin-si (KR) for samsung electronics co., ltd., Inseok Baek of Suwon-si (KR) for samsung electronics co., ltd., Hyeonok Jung of Daejeon (KR) for samsung electronics co., ltd., Beomyong Hwang of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/423, H01L29/10
Abstract: a transistor with a shared gate structure includes an active area and a gate. the active area has a body extending in a first direction on a substrate, and a protrusion extending in a second direction perpendicular to the first direction from a central portion of the body in the first direction. the gate is arranged above the active area to overlap a channel area of the active area, and has an inverted pi (ii) structure that, from a plan view, surrounds on three sides but does not cover a portion of the active area that includes two corner portions of the active area. the active area is divided into a first active area and a second active area by a separation area extending in the second direction and separating the body and a portion of the protrusion. the protrusion is divided into a first portion separated into two sub-portions by the separation area and a second portion, wherein the first portion is between the body and the second portion in the second direction. opposite ends of the body in the first direction corresponding to two drain areas, the second portion of the protrusion corresponding to a common source area, and the gate constitute two transistors, wherein the two transistors share the gate.
20240178293.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hyumin YOO of Suwon-si (KR) for samsung electronics co., ltd., Beomjin PARK of Suwon-si (KR) for samsung electronics co., ltd., Myung Gil KANG of Suwon-si (KR) for samsung electronics co., ltd., Dongwon KIM of Suwon-si (KR) for samsung electronics co., ltd., Younggwon KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/423, H01L27/092, H01L29/06, H01L29/08, H01L29/417, H01L29/775, H01L29/786
Abstract: disclosed is a semiconductor device comprising a substrate including an active pattern, a channel pattern on the active pattern and including semiconductor patterns spaced apart from and vertically stacked on each other, a source/drain pattern connected to the semiconductor patterns having a p-type, a gate electrode on the semiconductor patterns and including inner electrodes between neighboring semiconductor patterns and an outer electrode on an uppermost semiconductor pattern, and a gate dielectric layer between the gate electrode and the semiconductor patterns and including an inner gate dielectric layer adjacent to the inner electrode and an outer gate dielectric layer that extends from bottom to lateral surfaces of the outer electrode. the outer electrode and the outer gate dielectric layer have an inverted t shape.
Inventor(s): Eunkyu LEE of Suwon-si (KR) for samsung electronics co., ltd., Keunwook SHIN of Suwon-si (KR) for samsung electronics co., ltd., Minsu SEOL of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/423, H01L29/06, H01L29/18, H01L29/417, H01L29/775, H01L29/786
Abstract: a semiconductor device may include a first electrode and a second electrode on a substrate and arranged perpendicular to a surface of the substrate, a plurality of channel layers between the first electrode and the second electrode, and a gate electrode surrounding the plurality of channel layers. the plurality of channel layers may be inclined with respect to a direction from the first electrode to the second electrode. an electronic device may include the semiconductor device.
Inventor(s): Minsu SEOL of Suwon-si (KR) for samsung electronics co., ltd., Sungil PARK of Suwon-si (KR) for samsung electronics co., ltd., Jaehyun PARK of Suwon-si (KR) for samsung electronics co., ltd., Kyung-Eun BYUN of Suwon-si (KR) for samsung electronics co., ltd., Eunkyu LEE of Suwon-si (KR) for samsung electronics co., ltd., Junyoung KWON of Suwon-si (KR) for samsung electronics co., ltd., Minseok YOO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/76, H01L29/24, H01L29/78
Abstract: a semiconductor device may include a multi-layer gate dielectric layer and an electronic apparatus including the semiconductor device. the semiconductor device may include a channel layer including a two-dimensional semiconductor material, a gate dielectric layer on a first area of the channel layer, a gate electrode on the gate dielectric layer, and source and drain electrodes in a second area of the channel layer. the gate dielectric layer may include a high-k dielectric layer and an intermediate dielectric layer. the intermediate dielectric layer may be between the high-k dielectric layer and the channel layer. a dielectric constant of the intermediate dielectric layer may be less than a dielectric constant of the high-k dielectric layer.
Inventor(s): Kwanghee LEE of Suwon-si (KR) for samsung electronics co., ltd., Jinseong PARK of Suwon-si (KR) for samsung electronics co., ltd., Sangwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyemi KIM of Seoul (KR) for samsung electronics co., ltd., Seonghwan RYU of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/786, H01L29/417, H01L29/423, H01L29/66
Abstract: provided are a crystalline inzno oxide semiconductor, a method of forming the same, and a semiconductor device including the crystalline inzno oxide semiconductor. the crystalline inzno oxide semiconductor includes an oxide including in and zn, wherein in inductively coupled plasma-mass spectrometry (icp-ms) analysis, a content of in among in and zn is about 30 at % or more and about 75 at % or less, and the crystalline inzno oxide semiconductor has a peak showing crystallinity at a 2-theta value between about 32.3 degrees and about 33.3 degrees in x-ray diffraction (xrd) analysis.
20240178342.CHIP WET-TRANSFERRING DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Youngtek OH of Suwon-si (KR) for samsung electronics co., ltd., Kyungwook HWANG of Suwon-si (KR) for samsung electronics co., ltd., Dongkyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongho KIM of Suwon-si (KR) for samsung electronics co., ltd., Joonyong PARK of Suwon-si (KR) for samsung electronics co., ltd., Sanghoon SONG of Suwon-si (KR) for samsung electronics co., ltd., Minchul YU of Suwon-si (KR) for samsung electronics co., ltd., Junsik HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L33/00
Abstract: a chip wet-transferring device includes a chamber, a support member provided in the chamber and configured to support a transfer substrate, the transfer substrate including a plurality of grooves and on which a plurality of micro-semiconductor chips are disposed, and a magnetic field generator configured to remove a first micro-semiconductor chip from among the plurality of micro-semiconductor chips that is disposed on the transfer substrate and at least partially outside of the plurality of grooves on the transfer substrate by generating a magnetic field that moves the first micro-semiconductor chip in a direction substantially parallel with an upper surface of the transfer substrate.
Inventor(s): Zhongxin HE of Shenzhen (CN) for samsung electronics co., ltd.
IPC Code(s): H01P1/20, H01P3/16, H01P5/08
Abstract: a dielectric waveguide filter includes a dielectric body including a first and a second surfaces. the dielectric waveguide filter includes a metal plating covering an outer surface of the dielectric body. the dielectric waveguide filter includes a coupling structure formed a portion of the second surface. the coupling structure includes a coupling groove extending from the second surface into the dielectric body and including a coupling surface parallel to the second surface. the coupling structure includes an inner conductor at an annular center of the coupling groove that surrounds the inner conductor and separates the dielectric body into the inner conductor and an outer conductor. the inner conductor in the coupling groove includes a metal surface on the second surface. a distance between the coupling surface and the second surface is related to a coupling degree of the coupling structure.
20240178548.ELECTRONIC DEVICE INCLUDING ANTENNA_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Wangik SON of Suwon-si (KR) for samsung electronics co., ltd., Jungsik PARK of Suwon-si (KR) for samsung electronics co., ltd., Incheol BAEK of Suwon-si (KR) for samsung electronics co., ltd., Sunghyup LEE of Suwon-si (KR) for samsung electronics co., ltd., Dongwoo SEO of Suwon-si (KR) for samsung electronics co., ltd., Youngsoo CHUN of Suwon-si (KR) for samsung electronics co., ltd., Byengsang JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q1/24, H01Q9/04
Abstract: an electronic device includes a housing, a circuit board, a first electronic component, a first conductive plate, and a first antenna. the housing includes a support member and a side frame surrounding a periphery of the support member. the support member includes a first conductive area. the circuit board is disposed on a surface of the support member and includes a feeding point on a surface of the circuit board. the first electronic component is disposed on the surface of the support member. the first conductive plate is disposed on a surface of the first electronic component. the first conductive area is disposed between the first electronic component and the side frame. the first antenna includes a first radiator, a first feeding part, and a first signal terminal. at least a portion of the first electronic component is disposed between the first conductive area and the circuit board.
20240178579.ELECTRONIC DEVICE COMPRISING ANTENNA_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Young Ju KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Jong Hyuk KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Sung Chul PARK of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q21/30, H01Q1/24, H01Q1/38, H01Q3/24, H01Q5/30, H01Q5/307, H01Q9/04, H04B1/00, H04B7/08, H04M1/02
Abstract: disclosed is an electronic device. the electronic device according to an embodiment includes a plurality of antennas, and a communication circuit electrically connected with the plurality of antennas. the communication circuit includes a plurality of circuits receiving a signal in a first band and is configured to simultaneously receive the signal in the first band through two or more circuits of the plurality of circuits from two or more antennas, which are positioned adjacent to each other, from among the plurality of antennas. the number of the plurality of antennas is the same as the number of plurality of circuits.
Inventor(s): Daewoong Cho of Suwon-si (KR) for samsung electronics co., ltd., Kyeseok Yoon of Suwon-si (KR) for samsung electronics co., ltd., Hosung Son of Suwon-si (KR) for samsung electronics co., ltd., Sungwoo Lee of Suwon-si (KR) for samsung electronics co., ltd., Woonhyung Heo of Suwon-si (KR) for samsung electronics co., ltd., Jungwook Heo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02M3/158, H02M1/00
Abstract: an electronic device is provided. the electronic device includes: a first transistor configured to connect an input voltage node to a switching node; a second transistor configured to connect the switching node to a ground node; a latch circuit configured to generate a first signal having a first frequency and to control the first frequency based on a level of a load current; a switching modulation circuit configured to generate a second signal having a second frequency which is 1/n (where n is a natural number) times the first frequency; and a controller configured to control each of the first transistor and the second transistor, based on the second signal.
Inventor(s): Youngho CHOI of Suwon-si (KR) for samsung electronics co., ltd., Donghyuk LIM of Suwon-si (KR) for samsung electronics co., ltd., Kibaek KWON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H03K21/00, H03K5/13, H03K5/24, H03K19/21
Abstract: an electronic device includes a first sample circuit configured to generate a first sampling signal by sampling an input signal in response to edges of a clock signal, a first comparator configured to generate a first logic decision signal by comparing a voltage level of the first sampling signal with a reference voltage level, an analog bang-bang phase detector configured to generate a first detection signal by executing an exclusive or (xor) operation on successive samples of the first logic decision signal, and a digitally controlled oscillator configured to vary a frequency of the clock signal according to the first detection signal.
Inventor(s): Jiho Kim of Suwon-si (KR) for samsung electronics co., ltd., Seongmuk Kang of Suwon-si (KR) for samsung electronics co., ltd., Daehyun Kim of Suwon-si (KR) for samsung electronics co., ltd., Kijun Lee of Suwon-si (KR) for samsung electronics co., ltd., Myungkyu Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyomin Sohn of Suwon-si (KR) for samsung electronics co., ltd., Sunghye Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H03M13/11, H03M13/00
Abstract: a memory controller to control a memory module including a plurality of data chips, a first parity chip and a second parity chip, includes a system error correction code (ecc) engine and a processor to control the system ecc engine. the system ecc engine includes an ecc decoder and a memory to store a parity check matrix. the ecc decoder selects one of a plurality of ecc decoding schemes based on decoding status flags and corrects a plurality of symbol errors in a read codeword set from the memory module by performing an ecc decoding on the read codeword set based on the selected decoding scheme and the parity check matrix. the decoding status flags are provided from the plurality of data chips and each of the decoding status flags indicates whether at least one error bit is detected in respective one of the plurality of data chips.
Inventor(s): Jinsoo Lim of Suwon-si (KR) for samsung electronics co., ltd., Changkyu Seol of Suwon-si (KR) for samsung electronics co., ltd., Myoungbo Kwak of Suwon-si (KR) for samsung electronics co., ltd., Daewook Kim of Suwon-si (KR) for samsung electronics co., ltd., Dongjin Park of Suwon-si (KR) for samsung electronics co., ltd., Youngdon Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H03M13/15, H03M13/27, H03M13/29
Abstract: a device includes a receiver configured to receive a plurality of error correction code (ecc) codewords transmitted from an external device through a channel including one or more lanes; an ecc decoder configured to generate a plurality of post ecc codewords by performing error correction with respect to the plurality of ecc codewords and generating a first cyclic redundancy check (crc) codeword based on the plurality of post ecc codewords; a crc checker configured to determine whether an error exists in the first crc codeword; and a post ecc decoder configured to, when it is determined that the error exists in the first crc codeword, generate a second crc codeword by estimating a remaining error position based on error correction result information received from the ecc decoder and performing remaining error correction with respect to the plurality of post ecc codewords based on the remaining error position.
Inventor(s): Ilmuk CHOI of Suwon-si (KR) for samsung electronics co., ltd., Kiho KIL of Suwon-si (KR) for samsung electronics co., ltd., Kyunghyun PAIK of Suwon-si (KR) for samsung electronics co., ltd., Jeounggil LEE of Suwon-si (KR) for samsung electronics co., ltd., Wonseok JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B1/00
Abstract: a communication device includes a first antenna and a second antenna, a first front-end module configured to provide a transmission path associated with a first network or a first reception path associated with the first network, and a diplexer electrically configured to provide a second reception path associated with the first network and a first reception path associated with a second network, and processing circuitry configured to electrically connect the first front-end module to the first antenna in a first state, electrically connect the diplexer to the second antenna in the first state, electrically connect the first front-end module to the second antenna in a second state, and electrically disconnect the diplexer from the second antenna in the second state.
Inventor(s): Wonseok JEONG of Suwon-si (KR) for samsung electronics co., ltd., Kwonyeol PARK of Suwon-si (KR) for samsung electronics co., ltd., Ilmuk CHOI of Suwon-si (KR) for samsung electronics co., ltd., Ki-Ho KIL of Suwon-si (KR) for samsung electronics co., ltd., Anna KIM of Suwon-si (KR) for samsung electronics co., ltd., Youngik CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B17/29, H03M1/66
Abstract: an electronic device for preventing or reducing damage to a radio frequency front end (rffe). the electronic device including a memory device configured to store operating state information of a rffe and a damage prevention condition of the rffe, the rffe providing a signal path for delivering a first transmission (tx) signal to an antenna, and a tx signal controller configured to generate a tx signal control signal in response to determining that the operating state information does not satisfy the damage prevention condition, the tx signal control signal causing the first tx signal to be blocked or a magnitude of the first tx signal to be reduced.
Inventor(s): Junsu CHOI of Suwon-si (KR) for samsung electronics co., ltd., Changmok YANG of Suwon-si (KR) for samsung electronics co., ltd., Chounjong NAM of Suwon-si (KR) for samsung electronics co., ltd., Sungbin MIN of Suwon-si (KR) for samsung electronics co., ltd., Mincheol JEONG of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Junyeop JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L1/20, H04L1/00, H04L43/16
Abstract: an embodiment of an electronic device according to the present disclosure may comprise: a communication circuit for transmitting or receiving data through a plurality of links; a memory for storing mapping data in which data rates and frame error rates for the plurality of links are mapped; and a processor operatively connected to the communication circuit and the memory, wherein the processor is configured to: in response to a request for transmitting a packet corresponding to a first type, identify a link, through which the number of packets less than a predesignated value have been transmitted or received, from among the plurality of links; transmit or receive a plurality of packets corresponding to a second type through the identified link; identify frame error rates for the plurality of packets corresponding to the second type; and update the mapping data on the basis of the identified frame error rates.
Inventor(s): Yinan QI of Staines (GB) for samsung electronics co., ltd.
IPC Code(s): H04L5/00, H04W72/0446
Abstract: the present disclosure relates to a communication method and system for converging a 5generation (5g) communication system for supporting higher data rates beyond a 4-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. disclosed is a method of configuring a positioning reference signal in a telecommunication system, comprising the step of distributing a plurality of positioning reference signal on a per-slot, per-mini slot or per-subframe basis. also disclosed is a method of using a user equipment, ue, in a telecommunications network, comprising the steps of configuring the simultaneous use of td-occ dmrs and ptrs in at least one of uplink and downlink.
Inventor(s): Jinha HWANG of Suwon-si (KR) for samsung electronics co., ltd., Inho KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongsun LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaemin RYu of Suwon-si (KR) for samsung electronics co., ltd., Kyungim JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L9/06, G06F21/60
Abstract: an electronic device comprises: a first processor operating in a general non-secure environment; a second processor operating in a secure environment; a first memory allocated to the general non-secure environment; a second memory allocated to the secure environment; and a third memory shared in the general non-secure environment and the secure environment, wherein the second processor is configured to: encrypt at least a portion of secure data to generate an encrypted portion, the secure data generated by a trusted application executed in the secure environment, store the encrypted portion in the third memory, and store first information used to encrypt the at least a portion of the secure data and second information generated while encrypting the at least the portion of the secure data in the second memory, and wherein the first processor is configured to, store the encrypted portion stored in the third memory in the first memory.
Inventor(s): Bumhan KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyewon PARK of Suwon-si (KR) for samsung electronics co., ltd., Dasom LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L9/32
Abstract: an electronic device is provided. the electronic device includes a communication module for supporting near-field wireless communication, memory, and at least one processor operatively connected to the communication module and the memory. the memory stores one or more programs including instructions that, when executed by the at least one processor, may cause the electronic device to establish near-field wireless communication connection with an external device through the communication module, generate a first private key by using a determined random function, generate a first public key based on the first private key, generate a first certificate including a security level of the electronic device with respect to the first public key, and transmit the generated first certificate to the external device through the communication module.
Inventor(s): Daeyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Joontae Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok Yu of Suwon-si (KR) for samsung electronics co., ltd., Youngik Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L25/03, H04L25/02
Abstract: provided is an interference cancellation circuit including a relative delay control circuit receiving a first transmission signal of a first frequency, and a second transmission signal of a second frequency different from the first frequency and including a first delay buffer delaying the second transmission signal by a first delay time and a second delay buffer delaying the second transmission signal by a second delay time, a delay reference generation circuit generating respective reference signals by receiving the first transmission signal and the delayed second transmission signal from the relative delay control circuit, a weight control circuit updating a weight vector, a relative delay estimation circuit estimating a relative delay based on the reference signals, and an adaptive filter generating an interference model signal based on the weight vector and a first reference signal of the reference signals and filter the interference model signal from a received signal.
Inventor(s): Jeongho Yeo of Hwaseong-si (KR) for samsung electronics co., ltd., Youngbum Kim of Seoul (KR) for samsung electronics co., ltd., Donghan Kim of Osan-si (KR) for samsung electronics co., ltd., Yongjun Kwak of Yongin-si (KR) for samsung electronics co., ltd., Taehyoung Kim of Seoul (KR) for samsung electronics co., ltd., Juho Lee of Suwon-si (KR) for samsung electronics co., ltd., Younsun Kim of Seongnam-si (KR) for samsung electronics co., ltd., Seunghoon Choi of Seongnam-si (KR) for samsung electronics co., ltd., Sungjin Park of Incheon (KR) for samsung electronics co., ltd., Jinyoung Oh of Seoul (KR) for samsung electronics co., ltd., Youngwoo Kwak of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L27/26, H04L1/00, H04L1/1867, H04L1/20, H04L5/00, H04L5/02, H04W4/70, H04W68/02, H04W72/044, H04W72/23, H04W72/54, H04W74/00, H04W74/0833, H04W76/15, H04W84/10, H04W84/18
Abstract: the present disclosure relates to a communication technique of fusing a 5g communication system for supporting higher data transmission rate beyond a 4g system with an iot technology and a system thereof. the system may be used for an intelligent service (for example, smart home, smart building, smart city, smart car or connected car, health care, digital education, retail business, security and safety related service, or the like) based on the 5g communication technology and the iot related technology. the present disclosure discloses a method and apparatus for inserting an index into a code block as a unit in which a channel code is executed and transmitting the same.
Inventor(s): Jongwook LEE of Suwon-si (KR) for samsung electronics co., ltd., Young Jun HONG of Suwon-si (KR) for samsung electronics co., ltd., Wonseok LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L45/02
Abstract: a device includes: a processor configured to execute instructions in a memory, wherein, the instructions are configured to cause the processor to: select a first network group from among network groups, wherein the first network group is selected from among the network groups based on numbers of global links connecting the network groups, respectively; obtain a first list of network groups, among the network groups, that are not connected to the first network group; select a second network group and a third network group from among the network groups in the first list based on connections between the network groups in the first list; and based on the selecting of the first, second, and third network groups, form a topology including global links connecting the first network group, the second network group, and the third network group each to each other.
Inventor(s): Sang-Tae NA of Naju-si (KR) for samsung electronics co., ltd., Jin-Wook LEE of Yongin-si (KR) for samsung electronics co., ltd., Young-Ki KIM of Seoul (KR) for samsung electronics co., ltd., Chul-Seung KIM of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H04L65/403, H04L67/51, H04L12/28, H04N21/422
Abstract: a contents sharing network is provided. an operating method of a control device includes determining a current state of possible states in a contents sharing process over a network; and displaying an icon indicating the current state among a plurality of predefined icons. the states are defined as a combination of at least one item of network connection, device discovery, a type of the discovered device, the number of the discovered devices, and existence of an available additional service.
20240179230.ELECTRONIC DEVICE INCLUDING WIRE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Bumhee BAE of Suwon-si (KR) for samsung electronics co., ltd., Myunghoi KIM of Suwon-si (KR) for samsung electronics co., ltd., Minseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Younho KIM of Suwon-si (KR) for samsung electronics co., ltd., Jongwan SHIM of Suwon-si (KR) for samsung electronics co., ltd., Kwangmo YANG of Suwon-si (KR) for samsung electronics co., ltd., Jeongnam CHEON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04M1/02, H01P3/12
Abstract: an electronic device including wires is provided. the electronic device, which includes multiple wires through which direct current (dc) power and at least one radio frequency (rf) signal are transmitted, includes an rf transmitter configured to transmit the rf signal, and a power transmitter configured to transmit the dc power. the power transmitter includes a first power conductor including a conductive material, a second power wire including a conductive material and electrically spaced apart from the first power conductor in a first direction, a power conductor disposed between the first power conductor and the second power wire in parallel with the second power wire and electrically spaced apart from the second power wire, and at least one first via electrically connecting the first power conductor and the power conductor.
Inventor(s): Sangman SIM of Suwon-si (KR) for samsung electronics co., ltd., Taewon KWAK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04M1/27457, H04M1/2757
Abstract: an electronic device is provided. the electronic device includes a communication circuit, an interface, a processor, and memory storing instructions that, when executed by the at least one processor, cause the electronic device to, obtain a plurality of pieces of third contact information based on a plurality of pieces of first contact information received from an external device and a plurality of pieces of identified second contact information stored in a subscriber identification module (sim) card, identify a plurality of pieces of tag information corresponding to the plurality of pieces of third contact information, receive an input for selecting a first parameter from among the plurality of pieces of parameters, identify at least one piece of first tag information, obtain a plurality of pieces of fifth contact information based on at least one piece of fourth contact information, and provide remaining pieces of contact information other than at least one piece of fourth contact information.
Inventor(s): Ravikumar KALAIMANI of Bengaluru (IN) for samsung electronics co., ltd., Pramod Reddy SERIKAR of Bengaluru (IN) for samsung electronics co., ltd., Veerabhadrappa CHILAKANTI of Bengaluru (IN) for samsung electronics co., ltd., Shruthi SIRUR of Bengaluru (IN) for samsung electronics co., ltd., Gowtham ANANDHA BABU of Bengaluru (IN) for samsung electronics co., ltd., Gurumani Lakshmi Praneeth JUTURU of Bengaluru (IN) for samsung electronics co., ltd., Srihari SRIRAM of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): H04M1/72412, G06F3/01, G06F3/16, H04R1/10, H04R3/12
Abstract: embodiments herein provide a method for call sharing between low energy (le) audio headsets. the method includes receiving, by a first le audio headset connected with a user device over a first connected isochronous group (cig), a request message for sharing a call receiving at the user device with second le audio headsets from the user device. the method includes establishing, by the first le audio headset, a combined call between the first le audio headset and the at least one second le audio headset using a second cig to connect the first le audio headset with the at least one second le audio headset.
Inventor(s): Sungjun HWANG of Suwon-si (KR) for samsung electronics co., ltd., Jiyeon Ma of Suwon-si (KR) for samsung electronics co., ltd., Kihyoung Son of Suwon-si (KR) for samsung electronics co., ltd., Jingun Jung of Suwon-si (KR) for samsung electronics co., ltd., Youngah Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N9/31, G06F3/0481, G06F3/0484, G06F3/14
Abstract: an electronic device is provided for obtaining information for a plane on which light emitted from a projector is to be projected. the electronic device includes a processor, which identifies, from the plane based on the information, a first area having a first ratio, and a second area smaller than the first area. moreover, the processor obtains, in a state that a media content displays in the first area identified by a communication circuitry, user interface (ui) associated with the media content. the processor controls the projector to display, in the second area, the ui having layout based on a width and a height of the second area. the electronic device may be provided in a metaverse or in a metaverse service for enhancing interconnectivity between real and virtual objects.
Inventor(s): Weiming LI of Beijing (CN) for samsung electronics co., ltd., Namseop KWON of Suwon-si (KR) for samsung electronics co., ltd., Bao HE of Beijing (CN) for samsung electronics co., ltd., Kyungboo JUNG of Suwon-si (KR) for samsung electronics co., ltd., Myungjae JEON of Suwon-si (KR) for samsung electronics co., ltd., Qiang WANG of Beijing (CN) for samsung electronics co., ltd., Young Hun SUNG of Suwon-si (KR) for samsung electronics co., ltd., Lin MA of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04N13/271, G06T7/00, G06T7/593
Abstract: an apparatus and method with depth estimation are disclosed. the method includes calculating a first reliability of each of a plurality of time of flight (tof) pixels of a tof image; and generating, based on the first reliabilities, a depth map of a scene based on a left image and a right image and selectively based on the tof image.
Inventor(s): Jin-Young LEE of Suwon-si (KR) for samsung electronics co., ltd., Woong-il CHOI of Osan-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/513, H04N19/176, H04N19/44
Abstract: a method of decoding motion information includes: identifying a type of omission motion information not included in a bitstream from among a plurality of pieces of motion information used to decode a current block that is inter predicted; obtaining the omission motion information by using a predetermined method; and decoding the current block based on the plurality of pieces of motion information including the obtained omission motion information.
Inventor(s): Sungwook YOUN of Suwon-si (KR) for samsung electronics co., ltd., Yanggeun OH of Suwon-si (KR) for samsung electronics co., ltd., Woojhon CHOI of Suwon-si (KR) for samsung electronics co., ltd., Byungjun SON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/63, G06T7/246, H04N5/262, H04N23/61
Abstract: an electronic device includes a display, a camera, and a processor. the processor receives, while displaying a preview image through the display based on at least portion of image frames obtained through the camera, an input with respect to a preset button. the processor switches to an auto framing mode in response to the photographing input. the processor identifies a first area matched to a subject captured by the camera, and a second area including a preset portion of the subject in the first area. the processor, based on predicting a moving direction of the subject in the image frames by a position of the second area in the first area, displays the preview image by performing cropping with respect to at least one of the image frames.
Inventor(s): MINOH KIM of SUWON-SI (KR) for samsung electronics co., ltd., PILSU KIM of SUWON-SI (KR) for samsung electronics co., ltd., DAEHO LEE of SUWON-SI (KR) for samsung electronics co., ltd., JONGSEONG CHOI of SUWON-SI (KR) for samsung electronics co., ltd., CHANGHOON CHOI of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/81, G06T7/13, G06T7/90, H04N23/741, H04N23/84
Abstract: an image signal processor includes a noise reduction circuit, a high dynamic range (hdr) circuit and post-processing circuit. the noise reduction circuit performs noise reduction operation on a plurality of exposure noise images each respectively corresponding to one of a plurality of brightness levels to generate a plurality of exposure clean images in a first operation mode and performs the noise reduction operation on a single noise image corresponding to one brightness level to generate a single clean image in a second operation mode. the hdr circuit merges the plurality of exposure clean images to generate an hdr image in the first operation mode. the post-processing circuit generates an output image by processing the hdr image or the single clean image.
20240179428.COMPENSATION OF IMAGING SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): YOTAM ATER of TEL-AVIV (IL) for samsung electronics co., ltd., ORTAL GLATT of TEL-AVIV (IL) for samsung electronics co., ltd., WOO-SHIK KIM of TEL-AVIV (IL) for samsung electronics co., ltd., HEEJIN CHOI of TEL-AVIV (IL) for samsung electronics co., ltd., EVGENY SOLOVEICHIK of TEL-AVIV (IL) for samsung electronics co., ltd., NATAN BIBELNIK of TEL-AVIV (IL) for samsung electronics co., ltd.
IPC Code(s): H04N25/61, G06T5/00, H04N25/131
Abstract: an image processing unit includes an imaging sensor having a pixel array, a memory storing an artificial neural network (ann), and an image signal processor configured to operate the ann on an image output by the imaging sensor to predict an error value of a pixel of the image and correct the pixel using the predicted error value.
Inventor(s): Dongjae HAN of Suwon-si (KR) for samsung electronics co., ltd., Jaejung PARK of Suwon-si (KR) for samsung electronics co., ltd., Seunghyun LIM of Suwon-si (KR) for samsung electronics co., ltd., Haneul JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/75, H04N25/616, H04N25/65
Abstract: a ramp signal generator may include a current cell unit including a plurality of current sources configured to generate current signals, and a resistance unit connected to an output terminal of the current cell unit. the resistance unit may include a load resistor and an offset resistor connected in series with the load resistor and having a resistance based on analog gains.
20240179435.IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hyunyong JUNG of Seoul (KR) for samsung electronics co., ltd., Minwoong SEO of Hwaseong-si (KR) for samsung electronics co., ltd., Myunglae CHU of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/771, H04N25/53, H04N25/75
Abstract: an image sensor includes a pixel array including a plurality of pixels; and processing circuitry, wherein each of the plurality of pixels includes: a photodiode; a floating diffusion node configured to integrate photocharge generated by the photodiode; a first capacitor configured to store charge corresponding to a voltage of the floating diffusion node which is reset; a first sampling transistor one terminal of which is connected to the second node, and another terminal of which is connected to the first capacitor, being configured to sample charge to the first capacitor; a second capacitor configured to store charge corresponding to the voltage of the floating diffusion node at which the photocharge has been integrated; and a second sampling transistor, one terminal of which is connected to the second node, and another terminal of which is connected to the second capacitor, being configured to sample charge to the second capacitor.
Inventor(s): Seunghwan KO of Suwon-si (KR) for samsung electronics co., ltd., Jungkeun PARK of Suwon-si (KR) for samsung electronics co., ltd., Taeseon KIM of Suwon-si (KR) for samsung electronics co., ltd., Seonghun JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04R29/00, H04R1/10
Abstract: an earbuds cradle includes a body, a pair of earbud accommodating grooves provided on a upper surface of the body, a sound reflection deformation portion provided on a bottom of each of the pair of earbud accommodating grooves: and a lid disposed on the body to cover a pair of earbuds.
Inventor(s): Seunghwa CHO of Suwon-si (KR) for samsung electronics co., ltd., Dongnyeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jongjin BAE of Suwon-si (KR) for samsung electronics co., ltd., Aleum JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W4/16, H04W76/12
Abstract: an electronic device and a method for performing wireless communication by an electronic device are provided. the electronic device includes a communication circuit and a processor configured to establish, via a server, a call connection with a first external electronic device, transmit or receive, to or from the first external electronic device via direct communication with the first external electronic device, data related to an application program, based on an occurrence of an event related to a transferring of the call connection from the first external electronic device to a second external electronic device, store state information on the application program, transmit, to the second external electronic device via direct communication with the second external electronic device, the state information on the application program, and transmit, to the server, information on the transferring of the call connection from the first external electronic device to the second external electronic device.
Inventor(s): R ROHINI of Bangalore (IN) for samsung electronics co., ltd., Rajavelsamy RAJADURAI of Bangalore (IN) for samsung electronics co., ltd., Nivedya Parambath SASI of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W12/37, H04W4/40, H04W12/50, H04W76/14
Abstract: a method performed by a first terminal performing vehicle-to-everything (v2x) communication with a second terminal via one or more pc5 unicast links in a wireless communication system is provided. the method may include: receiving, from a core network entity, information on one or more security policies respectively corresponding to the one or more pc5 unicast links, wherein each of the one or more pc5 unicast links is associated with one or more v2x services; transmitting, to the second terminal, a direct communication request message including the one or more security policies for initiating the v2x communication; and in case that the transmitted direct communication request message is accepted by the second terminal, activating a security of each of the one or more pc5 unicast links based on the received information on the one or more security policies.
Inventor(s): Hyungho LEE of Suwon-si (KR) for samsung electronics co., ltd., Gyusu HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W28/08, H04W28/082
Abstract: a method performed by a server in a wireless communication system is provided. the method includes acquiring first configuration management (cm) information and first performance management (pm) information during a first period for a sector managed by the server, training a load balance model based on the first cm information and the first pm information, and determining a second load balance parameter to be used for distribution of communication traffic within the sector based on output information output upon an input of each of multiple candidate load balance parameters to the load balance model. the first cm information includes a first load balance parameter, and the first pm information includes at least one pm value.
Inventor(s): Himke VAN DER VELDE of Middlesex (GB) for samsung electronics co., ltd., Vinay Kumar SHRIVASTAVA of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W36/00, H04W76/40
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. disclosed is a user equipment, ue, operable with a telecommunication network, arranged to perform an operation associated with a level 2, l2, entity involved with multicast broadcast services, mbs, wherein the ue is arranged to perform the operation in response to one of: i) information received or acquired from the network or upon ue mobility; and ii) information provided in a message field received from the network, explicitly to trigger the ue to perform the operation.
Inventor(s): Fasil Abdul LATHEEF of Calicut (IN) for samsung electronics co., ltd., Mangesh Abhimanyu INGALE of Bangalore (IN) for samsung electronics co., ltd., Himke VAN DER VELDE of Zwolle (NL) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W36/00
Abstract: embodiments herein disclose a method for handling an rlf in a wireless communication system by a ue (). the method includes receiving a measurement configuration including a second timer () from a sn (). further, the method includes configuring the ue with the second timer associated with a measurement report for a pscell of the sn. further, the method includes starting the second timer when the measurement report is triggered while a first timer () for the pscell is running. further, the method includes detecting an expiry of one of: the first timer and the second timer for the pscell. further, the method includes declaring an scg rlf upon expiry of one of: the first timer and the second timer whichever expires sooner. further, the method includes initiating an scg failure procedure towards an mn () upon declaring scg rlf.
Inventor(s): Milos TESANOVIC of Staines (GB) for samsung electronics co., ltd., June HWANG of Suwon-si (KR) for samsung electronics co., ltd., Weiwei WANG of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W40/22, H04W40/36
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. disclosed is a method of routing data in a network, wherein a data transfer path is migrated from terminating at a first donor distributed unit, du, to terminating at a second donor du, comprising the step of either: a) configuring at least one node impacted by the migration and then using a default configuration, comprising a default identifier and/or transport channel, to re-route a packet impacted by the migration; or b) changing a part of a packet affected by the migration.
Inventor(s): Byung-Ki KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Mi-Yeon YU of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W52/02, H04B7/04, H04W52/42, H04W88/08
Abstract: an apparatus and method for reducing the power consumption of a base station (bs) in a multi antenna system are provided. the method for reducing the power consumption of the bs includes identifying an amount of resources being in use for communication, determining whether to convert at least one radio frequency (rf) unit into a power saving mode considering the amount of resources, if converting at least one rf unit into the power saving mode, turning off a power supply of a power amplifier of at least one of at least two antenna paths constituting the at least one rf unit converted into the power saving mode, and increasing a gain of at least one antenna path turning on a power supply such that a transmission power spectral density (psd) is not changed according to the power saving mode conversion.
Inventor(s): Youngwoo KWAK of Gyeonggi-do (KR) for samsung electronics co., ltd., Sungjin PARK of Gyeonggi-do (KR) for samsung electronics co., ltd., Cheolkyu SHIN of Gyeonggi-do (KR) for samsung electronics co., ltd., Donghan KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Younsun KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Hoondong NOH of Gyeonggi-do (KR) for samsung electronics co., ltd., Jeongho YEO of Gyeonggi-do (KR) for samsung electronics co., ltd., Jinyoung OH of Gyeonggi-do (KR) for samsung electronics co., ltd., Juho LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Seunghoon CHOI of Gyeonggi-do (KR) for samsung electronics co., ltd., Heedon GHA of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngbum KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Taehyoung KIM of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W56/00, H04J11/00, H04L25/00, H04L25/02, H04W52/02, H04W72/30
Abstract: the present disclosure relates to a communication method and system for converging a 5th-generation (5g) communication system for supporting higher data rates beyond a 4th-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. the present invention presents a method for efficiently estimating a physical channel and, according to the present invention, a terminal of a communication system receives a synchronization signal from a base station, receives a broadcast channel from the base station, and can estimate the broadcast channel on the basis of the synchronization signal.
Inventor(s): Youngjoong MOK of Suwon-si (KR) for samsung electronics co., ltd., Hyunjeong KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/02, H04L5/00, H04W72/0453, H04W72/23, H04W74/0808, H04W74/0816, H04W76/27
Abstract: the present disclosure relates to 5g (5th generation) or pre-5g communication systems to support the higher data rate after 4g (4th generation) communication systems such as lte (long term evolution). the present disclosure provides an apparatus and a method for effectively selecting a transmission carrier in a wireless communication system. the present disclosure relates to an operating method of a terminal in a wireless communication system, which including receiving configuration information from a base station and selecting a transmission carrier and a resource pool on the basis of the configuration information.
Inventor(s): Aris Papasakellariou of Houston TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W72/121, H04L1/1607, H04L5/00, H04W72/1273, H04W72/23, H04W72/566
Abstract: methods and apparatuses for processing an acknowledgement report for reception of control information. a method for a user equipment (ue) to receive physical downlink control channels (pdcchs) includes determining a prioritization for receiving the pdcchs and receiving the pdcchs based on the prioritization. pdcch receptions for a first search space set (sss) are prioritized over pdcch receptions for a second sss or a third sss. the pdcch receptions for the second sss are prioritized over the pdcch receptions for the third sss based on a configuration. the pdcch receptions for the first sss include a first downlink control information (dci) format. the pdcch receptions for the second sss include a second dci format that schedules a groupcast physical downlink shared channel (pdsch) reception. the pdcch receptions for the third sss include a third dci format that schedules a unicast pdsch reception.
Inventor(s): Seongmok LIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Kyoungmin PARK of Gyeonggi-do (KR) for samsung electronics co., ltd., Ameha Tsegaye ABEBE of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngrok JANG of Gyeonggi-do (KR) for samsung electronics co., ltd., Hyoungju JI of Gyeonggi-do (KR) for samsung electronics co., ltd., Kyungjun CHOI of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/1268, H04L1/1607, H04W72/232
Abstract: the disclosure relates to a fifth generation (5g) or sixth generation (6g) communication system for supporting higher data transfer rates. a method performed by a user equipment (ue) in a wireless communication system, the method comprising: receiving configuration information on a resource for transmitting a first physical uplink shared channel (pusch) based on a configured grant, the first pusch being associated with a first control resource set (coreset) pool identifier; receiving downlink control information (dci) including information on a resource for transmitting a second pusch based on a dynamic grant (dg), the second pusch being associated with a second coreset pool identifier, wherein the resource for transmitting the first pusch overlaps with all or part of the resource for transmitting the second pusch in a time domain; identifying whether a value of the first coreset pool identifier is different from a value of the second coreset pool identifier; and in case that the value of the first coreset pool identifier is identified to be different from the value of the second coreset pool identifier, transmitting the first pusch and the second pusch.
Inventor(s): Hamid SABER of San Diego CA (US) for samsung electronics co., ltd., Jung Hyun BAE of San Diego CA (US) for samsung electronics co., ltd.
IPC Code(s): H04W72/1273, H04L1/1607, H04L5/00, H04W72/044, H04W72/23
Abstract: a method and a user equipment (ue) are provided for resource allocation. the ue receives repeated physical downlink control channels (pdcchs) from a network. each of the repeated pdcchs includes downlink control information (dci) that schedules reception of a same physical downlink shared channel (pdsch) at the ue. the ue determines resources for at least one of transmission and reception at the ue, from a pdcch having a latest start symbol or a latest ending symbol among the repeated pdcchs. the repeated pdcchs are received in accordance with the ue and the network communicating using a multi-transmission reception point (trp) repetition scheme or a multi-trp multi-chance scheme.
Inventor(s): Sungjin PARK of Suwon-si (KR) for samsung electronics co., ltd., Jinyoung OH of Suwon-si (KR) for samsung electronics co., ltd., Youngbum KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok RYU of Suwon-si (KR) for samsung electronics co., ltd., Cheolkyu SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jeongho YEO of Suwon-si (KR) for samsung electronics co., ltd., Seunghoon CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/23, H04L27/26, H04W72/0446, H04W72/0453, H04W72/1268, H04W72/21, H04W74/0816
Abstract: the disclosure relates to a communication technique for combining an iot technology with a 5g communication system for supporting a higher data transmission rate than that of a beyond-4g system, and a system therefor. the disclosure may be applied to intelligent services (for example, smart homes, smart buildings, smart cities, smart cars or connected cars, health care, digital education, retail businesses, security and safety related services, and the like) based on 5g communication technologies and iot-related technologies. a method performed by a terminal in a wireless communication system is provided, the method includes receiving configured grant (cg)-physical uplink shared channel (pusch) configuration information, identifying a plurality of actual repetition puschs based on a pusch repetition transmission type b and the cg-pusch configuration information, identifying whether 1 symbol actual repetition pusch is included in the plurality of actual repetition puschs, and in case that the 1 symbol actual repetition pusch is included in the plurality of actual repetition puschs and is related to uplink transmission in an unlicensed band, transmitting the 1 symbol actual repetition pusch.
Inventor(s): Youngbum KIM of Seoul (KR) for samsung electronics co., ltd., Juho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/23, H04L1/1829, H04L5/00, H04W72/52, H04W52/02
Abstract: the present disclosure relates to a 5generation 5g) or pre-5g communication system for supporting higher data rates beyond a 4generation (4g) communication system such as long-term evolution (lte). a method for a base station (bs) are provided. the method includes receiving signals from at least one terminal, decoding a signal having a signal strength that is higher than a threshold value among the received signals, identifying whether a resource through which the signal has been transmitted is included in an overlap region in which a first resource region dynamically allocated by control information and a second resource region predetermined by configuration information overlap each other if the decoding of the signal fails, and skipping storage of the received signal in a buffer if the resource through which the signal has been transmitted is included in the overlap region.
Inventor(s): Emad N. Farag of Flanders NJ (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd., Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd., Dalin Zhu of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W72/53, H04W16/28, H04W72/044, H04W72/23, H04W80/02
Abstract: methods and apparatuses for fast beam indication. a method of operating a ue includes receiving a number (m) of transmission configuration indicator (tci)state code points activated by a medium access control element (mac ce) and, if the ue is configured to be indicated tci state code points on dl control information (dci) and m>1, receiving the dci that indicates at least one tci state code point from the m tci state code points and determining a tci state to apply to at least one of downlink (dl) channels and uplink (ul) channels. the method further includes updating one or more spatial filters for at least one of the dl channels and the ul channels based on the determined tci state and at least one of receiving and transmitting the dl channels and the ul channels, respectively, based on the updated one or more spatial filters.
Inventor(s): Sangbum KIM of Suwon-si (KR) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W74/0816, H04W24/10, H04W76/19
Abstract: the present disclosure relates to a communication method and system for converging a 5th-generation (5g) communication system for supporting higher data rates beyond a 4th-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. disclosed are a method and a device for a terminal to indicate whether lbt has failed or not and declare a detected lbt failure, in report mechanisms such as rlf, scg failure, establishment failure, and mdt.
Inventor(s): Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd., Jaehyuk JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W74/0833, H04B17/318, H04L5/00, H04W24/08, H04W4/70, H04W72/542
Abstract: a communication method and system for converging a fifth generation (5g) communication system for supporting higher data rates beyond a fourth generation (4g) system with a technology for internet of things (iot) are provided. the communication method and system may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. a method by a terminal configured with at least one serving cell for performing a random access (ra) procedure is provided. the method includes measuring downlink reference signal received power (dl rsrp) of a serving cell on which the ra procedure is initiated, determining whether the dl rsrp of the serving cell is greater than a threshold, and performing a two-step ra procedure based on the dl rsrp of the serving cell being greater than the threshold.
Inventor(s): Daesung CHO of Suwon-si (KR) for samsung electronics co., ltd., Jihae KO of Suwon-si (KR) for samsung electronics co., ltd., Sangmi KIM of Suwon-si (KR) for samsung electronics co., ltd., Boram BAE of Suwon-si (KR) for samsung electronics co., ltd., Taehwan SON of Suwon-si (KR) for samsung electronics co., ltd., Seongmin JE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/10, A63B24/00, A63B71/06, G06F3/01, H04L65/1069, H04L65/65
Abstract: an electronic device is provided. the electronic device includes a display, at least one sensor, a communication circuit, one or more processors, and memory. the memory store one or more computer programs including computer-executable instructions that, when executed by the one or more processors, cause the electronic device to obtain first exercise data on the basis of a value measured by means of the at least one sensor, in a first operation mode, generate and store first exercise summary data on the basis of the first exercise data, communication-connect to a first external electronic device by means of the communication circuit, if a predefined data type is received from the first external electronic device, switch to a second operation mode, receive a data transmission command from the first external electronic device by means of the communication circuit, when the data transmission command is received, obtain second exercise data corresponding to content displayed on a second external electronic device, on the basis of a value measured by means of the at least one sensor, transmit second exercise data to the first external electronic device in real time for a predetermined time by means of the communication circuit, and receive and store second exercise summary data generated on the basis of the second exercise data, from the second external electronic device.
Inventor(s): Jongmu CHOI of Suwon-si (KR) for samsung electronics co., ltd., Junhak LIM of Suwon-si (KR) for samsung electronics co., ltd., Doosuk KANG of Suwon-si (KR) for samsung electronics co., ltd., Jinwon KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangki PARK of Suwon-si (KR) for samsung electronics co., ltd., Youngho JEON of Suwon-si (KR) for samsung electronics co., ltd., Sinjae KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/18, H04W76/19
Abstract: an electronic device includes: a wireless communication circuit; a memory storing a program including an instruction for performing wireless communication based on a first communication protocol and a second communication protocol, respectively, through the wireless communication circuit; and a processor connected to the memory and the wireless communication circuit to: identify that communication connection of a first communication link is disconnected while performing communication through the first communication link based on the first communication protocol with an external electronic device; with information related to the disconnection of the communication connection, determine if possible to reconnect the first communication link within a specified period of time; and when determined that reconnection of the first communication link is impossible within the specified period of time, connect a second communication link based on the second communication protocol through the wireless communication circuit without waiting for the reconnection for the first communication link.
Inventor(s): Donggun KIM of Suwon-si (KR) for samsung electronics co., ltd., Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaehyuk JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W80/08, H04W12/10, H04W28/06, H04W76/19, H04W76/27, H04W76/30
Abstract: the present disclosure relates to a communication method and system for converging a 5th-generation (5g) communication system for supporting higher data rates beyond a 4th-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. in addition, a method of a terminal in a radio communication system according to the disclosure includes: performing, by a packet data convergence protocol (pdcp) entity of the terminal, deciphering and integrity verification of first data; if the integrity verification of the first data fails, indicating a failure of the integrity verification to an upper layer; and discarding the first data and considering that the first data has not been received.
Inventor(s): Hyungin KIM of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung Song of Suwon-si (KR) for samsung electronics co., ltd., Youngdeong Koh of Suwon-si (KR) for samsung electronics co., ltd., Kwangjoo Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05B6/10, C03C17/00, C03C21/00
Abstract: a black glass-ceramic top plate for a cooking apparatus and an induction heating device including the same are provided. the black glass-ceramic top plate for a cooking apparatus includes: a black glass-ceramic substrate including a chemically strengthened upper surface; a shielding region provided with a printed layer disposed under the black glass-ceramic substrate to block light transmission; and a transmissive region not provided with the printed layer under the black glass-ceramic substrate to transmit light, wherein the printed layer includes: a background printed layer disposed under the black glass-ceramic substrate; and a shielding printed layer disposed under the background printed layer.
Inventor(s): Chunghyo JUNG of Suwon-si (KR) for samsung electronics co., ltd., Chiyoung YOON of Suwon-si (KR) for samsung electronics co., ltd., Jungsik CHOI of Siheung-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K3/34, B23K1/002, B23K101/42, H05K3/10, H05K3/42
Abstract: an electronic device includes an injection mold including a mounting part and a wiring groove, a plated wiring plated on the wiring groove, and an electronic element mounted on the mounting part and electrically connected to the plated wiring, wherein the plated wiring is plated on an outer region of the injection mold, and the electronic element mounted on the injection mold dispensed on the plated wiring.
20240179864.ELECTRONIC DEVICE INCLUDING DISPLAY_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hyunwoo SIM of Suwon-si (KR) for samsung electronics co., ltd., Sangseol LEE of Suwon-si (KR) for samsung electronics co., ltd., Heeseok JUNG of Suwon-si (KR) for samsung electronics co., ltd., Jungsik PARK of Suwon-si (KR) for samsung electronics co., ltd., Yongseok LEE of Suwon-si (KR) for samsung electronics co., ltd., Soyoung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K5/06
Abstract: an electronic device according to an embodiment of the disclosure may include: a housing; a waterproof member comprising a waterproof material disposed along a periphery of the housing on one surface of the housing; a window cover disposed to face the one surface of the housing; a display disposed between the window cover and the housing and including a bending part located at one end part of the electronic device; and a molding part extending along peripheries of the window cover and the display and disposed on one surface of the waterproof member, wherein at least a part of the molding part may be disposed in one direction toward an outside of the electronic device and in another direction opposite the one direction based on the bending part of the display.
20240179888.SEMICONDUCTOR MEMORY DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jaecheon YONG of Suwon-si (KR) for samsung electronics co., ltd., Daehong KO of Goyang-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: a semiconductor memory device includes a source layer, a semiconductor layer including a semiconductor protrusion structure, and a drain layer arranged in a first horizontal direction on a substrate, a cell capacitor extending in the first horizontal direction on the substrate and including a lower electrode layer, a capacitor dielectric film, and an upper electrode layer connected to the drain layer, a bit line extending in a vertical direction on the substrate and connected to the source layer, and a gate structure covering the semiconductor protrusion structure and including a gate dielectric film on the semiconductor protrusion structure and a gate electrode film on the gate dielectric film. a value of a first thickness of an end portion of the semiconductor protrusion structure facing the drain layer is greater than a value of a second thickness of another end portion of the semiconductor protrusion structure facing the source layer.
20240179890.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Byunghoon CHO of Suwon-si (KR) for samsung electronics co., ltd., Namjung KANG of Suwon-si (KR) for samsung electronics co., ltd., Kiheum NAM of Suwon-si (KR) for samsung electronics co., ltd., Jihyun CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: a semiconductor device includes a peripheral circuit transistor disposed in a peripheral circuit region. first connection lines and second connection lines are disposed on a same plane above the peripheral circuit transistor. the second connection lines including a cutting portion. a cell capacitor is disposed on the substrate in a cell region. a first plate pattern is on the cell capacitor. a second plate pattern is on a portion of a surface of the first plate pattern. a first contact plug directly contacts an upper surface of the second plate pattern. a third connection line is disposed above the second connection line. the third connection line faces the cutting portion. second contact plugs extend vertically to directly contact both sidewalls of the third connection line and upper surfaces of the second connection lines. the third connection line is disposed on a same plane as the second plate pattern.
Inventor(s): MYUNGHUN JUNG of Suwon-si (KR) for samsung electronics co., ltd., DONGHWA SHIN of Suwon-si (KR) for samsung electronics co., ltd., SUNG-JIN YEO of Suwon-si (KR) for samsung electronics co., ltd., HO-IN RYU of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: a semiconductor device may include a substrate including a core region, a cell block region, and a peripheral region, which are sequentially arranged in a first direction, and a bit line structure on the cell block region. the bit line structure may include a first bit line and a second bit line, which extend in the first direction and are adjacent to each other in a second direction crossing the first direction, a bit line connector, which electrically connects the first bit line to the second bit line and is adjacent to the peripheral region, and a bit line pad, which is electrically connected to the first bit line and is adjacent to the core region.
Inventor(s): Sangkyu SUN of Suwon-si (KR) for samsung electronics co., ltd., Hyunyong KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyun-Jung KIM of Suwon-si (KR) for samsung electronics co., ltd., Junhee PARK of Suwon-si (KR) for samsung electronics co., ltd., Kyuwon WOO of Suwon-si (KR) for samsung electronics co., ltd., Jiwon OH of Suwon-si (KR) for samsung electronics co., ltd., Yoonyoung CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: a semiconductor device includes a substrate that includes an element separation film, an active region defined by the element separation film and arranged in a first direction, and a trench positioned across the active region and the element separation film, a bit line contact that is positioned within the trench and is connected to the active region, a bit line structure that is connected to the substrate through the bit line contact and that extends in a second direction different from the first direction across the active region, and a first contact spacer, a second contact spacer, and a third contact spacer within the trench and around the bit line contact, the first contact spacer being continuous within the trench, and each of the second contact spacer and the third contact spacer being separated into at least two discrete parts within the trench.
20240179899.NAND FLASH DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hakseon KIM of Suwon-si (KR) for samsung electronics co., ltd., Nakjin SON of Suwon-si (KR) for samsung electronics co., ltd., Dongjin LEE of Suwon-si (KR) for samsung electronics co., ltd., Junhee LIM of Suwon-si (KR) for samsung electronics co., ltd., Seongsu KIM of Suwon-si (KR) for samsung electronics co., ltd., Hanmin CHO of Suwon-si (KR) for samsung electronics co., ltd., Chiwoong HAM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B41/41, G11C16/04, H10B41/10, H10B41/27, H10B41/35, H10B43/10, H10B43/27, H10B43/35, H10B43/40
Abstract: a nand flash device may include a peripheral circuit including a transistor, a substrate, and a device isolation region defining an active region of the substrate. the transistor may include a first gate structure on the active region. the transistor may include source and drain regions extending in a first direction in the active region on both sides of the first gate structure, which may include a first lightly-doped source and drain region adjacent to the first gate structure and a second lightly-doped source and drain region integrally connected thereto. the second lightly-doped source and drain region may be arranged farther from the first gate structure than the first lightly-doped source and drain region. the second lightly-doped source and drain region may have a smaller width in the second direction than a width of the first lightly-doped source and drain region in the second direction.
Inventor(s): Jun Hyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Ji Won Kim of Suwon-si (KR) for samsung electronics co., ltd., Ah Reum Lee of Suwon-si (KR) for samsung electronics co., ltd., Suk Kang Sung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H01L23/00, H01L25/065, H01L25/18, H10B80/00
Abstract: a semiconductor memory device includes a cell substrate including a first surface and a second surface opposite to the first surface, a first mold stack including a plurality of first gate electrodes sequentially stacked on the first surface, a second mold stack including a plurality of second gate electrodes sequentially stacked on the first mold stack, a first channel structure extending in a first direction with respect to the first surface and crossing the plurality of first gate electrodes and the plurality of second gate electrodes, and an input/output pad on the second surface, wherein the first mold stack includes a mold opening that exposes a portion of the second mold stack, and at least a portion of the input/output pad overlaps the mold opening in the first direction.
Inventor(s): Moorym CHOI of Yongin-si (KR) for samsung electronics co., ltd., Jungtae SUNG of Seoul (KR) for samsung electronics co., ltd., Sanghee YOON of Hwaseong-si (KR) for samsung electronics co., ltd., Wooyong JEON of Anyang-si (KR) for samsung electronics co., ltd., Junyoung CHOI of Seoul (KR) for samsung electronics co., ltd., Yoonjo HWANG of Gimpo-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H10B12/00, H10B43/40
Abstract: a nonvolatile memory device includes a first structure and a second structure bonded to the first structure. the second structure includes a low-resistance conductive layer, a common source line layer on the low-resistance conductive layer, a stack structure above the common source line layer, a plurality of channel structures passing through a cell region of the stack structure and contacting the common source line layer, a dummy channel structure passing through a step region of the stack structure and contacting the common source line layer, a second insulating structure on the stack structure, a plurality of second bonding pads on the second insulating structure, and a second interconnect structure in the second insulating structure.
Inventor(s): Hyunmook CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jihong KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunmog PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H01L25/065, H10B41/10, H10B41/27, H10B41/35, H10B43/10, H10B43/35, H10B80/00
Abstract: a semiconductor device including first gate electrodes stacked on a substrate and spaced apart from each other, a first channel structure passing through the first gate electrodes, the first channel structure including a first channel layer, a first dielectric layer between the first channel layer and the first gate electrodes, a first buried insulating layer filling an interior of the first channel layer, an auxiliary channel layer covering at least a portion of the first channel layer and the first dielectric layer, and a first channel pad on the first buried insulating layer, and isolation regions passing through the first gate electrodes, the isolation regions and spaced apart from each other may be provided. the auxiliary channel layer may be in contact with the first channel pad. the first channel pad may be spaced apart from the first dielectric layer by the auxiliary channel layer.
20240179914.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Chulmin Choi of Suwon-si (KR) for samsung electronics co., ltd., Sunil Shim of Suwon-si (KR) for samsung electronics co., ltd., Joohyun Lim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H10B43/10, H10B43/35, H10B43/40
Abstract: a semiconductor device includes a gate electrode structure including first to fourth gate electrodes, a first memory channel structure extending through the first to third gate electrodes, a second memory channel structure contacting an upper surface of the first memory channel structure and extending through the fourth gate electrode, and a first contact plug including a lower portion extending partially through the gate electrode structure and an upper portion on and contacting an upper surface of the lower portion. the lower portion of the first contact plug has a varying width, and the upper portion of the first contact plug has a width gradually increasing from a bottom toward a top thereof. the lower portion of the first contact plug extends through the first, second and third gate electrodes, and is electrically insulated from the first and second gate electrodes, and is electrically connected to the third gate electrode.
20240179917.SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Minji PARK of Suwon-si (KR) for samsung electronics co., ltd., Dongha SHIN of Suwon-si (KR) for samsung electronics co., ltd., Hongsoo JEON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/40, H10B41/27, H10B41/35, H10B41/41, H10B43/27, H10B43/35
Abstract: disclosed are semiconductor memory devices comprising a peripheral region including a substrate, high voltage transistors on the substrate, first lower lines connected to the high voltage transistors, and second lower lines connected to the first lower lines, and a cell region on the peripheral region. the first and the second lower lines extend along a first direction parallel to an upper surface of the substrate. the first lower lines include first high voltage lines and first low voltage lines. the second lower lines include second high voltage lines and second low voltage lines. the second high voltage lines and the first low voltage lines separated in a second direction parallel to the upper surface of the substrate and a third direction perpendicular to the upper surface of the substrate, and the second low voltage lines and the first high voltage lines separated in the second direction and the third direction.
20240179925.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jaekyu SUNG of Suwon-si (KR) for samsung electronics co., ltd., Joonghyun BAEK of Suwon-si (KR) for samsung electronics co., ltd., Cheolwoo LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B80/00, H01L23/00, H01L25/18
Abstract: a semiconductor package may include a substrate; at least one controller chip on the substrate; at least one chip structure on the substrate, the at least one chip structure including a buffer chip, an upper chip stack on the buffer chip, and a lower chip stack below the buffer chip; an upper wire electrically connecting the upper chip stack, the buffer chip, and the at least one controller chip; a lower wire electrically connecting the lower chip stack and the at least one controller chip; a connection wire electrically connecting the at least one controller chip to the substrate; and connection bumps below the substrate, the connection bumps being electrically connected to the at least one controller chip and the at least one chip structure.
Samsung Electronics Co., Ltd. patent applications on May 30th, 2024
- Samsung Electronics Co., Ltd.
- A45C11/00
- G09G3/20
- H04M1/04
- Samsung electronics co., ltd.
- A45C13/00
- G06F1/16
- A61B5/021
- A61B5/00
- A61B5/029
- A61B5/026
- A61B5/0205
- A61B5/145
- A61B5/0295
- A61B5/01
- A61B5/1455
- G06N20/00
- A61B5/25
- A61H1/02
- A61H3/00
- G08C17/02
- G16H40/67
- B01D33/48
- B01D33/27
- B01D33/46
- D06F39/10
- B01D61/36
- B01D69/02
- B01D69/04
- C01F5/28
- C01F7/50
- C01F11/22
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