Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
Patent Applications by Samsung Electronics Co., Ltd. on May 16th, 2024
Samsung Electronics Co., Ltd.: 182 patent applications
Samsung Electronics Co., Ltd. has applied for patents in the areas of H01L29/423 (13), H10B80/00 (12), H01L29/775 (12), H01L25/065 (11), H01L23/00 (11)
With keywords such as: device, based, layer, including, image, semiconductor, configured, data, substrate, and information in patent application abstracts.
Patent Applications by Samsung Electronics Co., Ltd.
Inventor(s): Wonyoung SEO of Suwon-si (KR) for samsung electronics co., ltd., Hyunkoo KANG of Suwon-si (KR) for samsung electronics co., ltd., Chunseong KIM of Suwon-si (KR) for samsung electronics co., ltd., Taegyu KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinwook YOON of Suwon-si (KR) for samsung electronics co., ltd., Kyounghoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Euihyun JUNG of Suwon-si (KR) for samsung electronics co., ltd., Donghyun CHUN of Suwon-si (KR) for samsung electronics co., ltd., Hongseok CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jihoon HA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A01K29/00, A01K27/00, B25J11/00, B25J13/00, B60L58/13, G06F3/16
Abstract: a pet care system includes a mobile robot comprising a first communication circuit configured to transmit a search signal through a first communication method and a second communication circuit configured to transmit event occurrence information through a second communication method different from the first communication method. the system includes a wearable device including a sensor configured to transmit a response signal through the first communication method in response to the search signal. the system includes a station comprising an operation dispenser configured to perform a predetermined operation based on the reception of the event occurrence information. the mobile robot further comprises a processor configured to determine a moving direction of the mobile robot based on the response signal received from the wearable device.
20240156218.RING-TYPE WEARABLE DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jin-hong MIN of Suwon-si (KR) for samsung electronics co., ltd., Jea-hyuck LEE of Anyang-si (KR) for samsung electronics co., ltd., Seong-wook JO of Suwon-si (KR) for samsung electronics co., ltd., Shin-hee CHO of Suwon-si (KR) for samsung electronics co., ltd., Su-ho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A44C9/00, A44C15/00, A61B5/00, A61B5/024, A61B5/24
Abstract: a ring-type wearable device is disclosed. the disclosed ring-type wearable device comprises: an outer ring member; an inner ring member separably inserted into the outer ring member; a sensor unit disposed in the outer ring member; and a control unit disposed in the outer ring member so as to be electrically connected to the sensor unit, wherein the sensor unit can maintain constant sensitivity in correspondence to the thickness of the inner ring member.
20240156314.CLEANING DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Woojin NA of Suwon-si (KR) for samsung electronics co., ltd., Hyeoncheol KIM of Suwon-si (KR) for samsung electronics co., ltd., Kihwan KWON of Suwon-si (KR) for samsung electronics co., ltd., Kyoungwoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyounsoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Minro YUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A47L9/04
Abstract: a cleaning device may include a body unit movable along one plane, a first suction unit extending in a first direction and arranged under the body unit, and through which waste is suctionable, a second suction unit extending in the first direction and arranged under the body unit, and through which waste is suctionable, a partition unit extending in the first direction and arranged between the first suction unit and the second suction unit, a roller unit arranged in the first suction unit, extending in the first direction, and arranged to be rotatable around one axis extending in the first direction, a brush extending by a first length from an outer circumferential surface of the roller unit, and a driving unit generating power such that the roller unit rotates around the one axis.
Inventor(s): Choongkeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Youngdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Kwangjoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Yonghwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Dahyun BYEON of Suwon-si (KR) for samsung electronics co., ltd., Seok RHEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B05D7/14, B05D7/00, C09D7/40, C09D7/61, C09D133/08, C09D167/00
Abstract: a pcm steel sheet for a home appliance and a refrigerator including the same. the pcm steel sheet may include a steel sheet, a basecoat layer provided on the steel sheet, a hairline layer formed on the basecoat layer, a clearcoat layer provided on the hairline layer, and a primer layer between the steel sheet and the basecoat layer to provide adhesion. the pcm steel sheet for a home appliance does not include a metal mesh layer. the pcm steel sheet for a home appliance may have a brightness (flop index) of about 20 or more.
Inventor(s): Youngchul KWON of Suwon-si (KR) for samsung electronics co., ltd., Goonwoo KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B23K26/0622, B23K26/53, H01L21/67
Abstract: provided is a wafer processing apparatus including a laser source for generating a laser beam including a plurality of pulses, a wafer support configured to support a wafer, and a beam transmission optical system for transferring the laser beam output from the laser source to the wafer, wherein the laser source sets parameters of the laser beam so that the laser beam is collected inside the wafer by a self-condensing phenomenon while moving along the inside of the wafer.
Inventor(s): YEONGKWON KO of Suwon-si (KR) for samsung electronics co., ltd., Soyeon KWON of Suwon-si (KR) for samsung electronics co., ltd., Chungsun LEE of Suwon-si (KR) for samsung electronics co., ltd., Jihun JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B23K26/38, B23K26/40, H01L21/304, H01L21/3065, H01L21/683
Abstract: a semiconductor chip splitting method using a laser includes: performing a back-end-of-line (beol) process comprising forming wiring at or above a front surface of a semiconductor substrate; forming a lower trench at a rear surface of the semiconductor substrate; forming a laser scribing line on the semiconductor substrate along a region overlapping the lower trench; and splitting the semiconductor substrate into chips by a process comprising cutting along the laser scribing line.
Inventor(s): DONGHOON KWON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B24B37/005, B24B37/20
Abstract: this disclosure relates to a chemical mechanical polishing apparatus, and may include: a polishing platen including an opening; a polishing pad positioned on the polishing platen and including a transmissive part overlapping the opening; a slurry supply supplying a slurry including a photocatalyst to the polishing pad; a head part positioned on the polishing pad and capable of mounting a wafer; and a light irradiation part positioned within the opening of the polishing platen.
Inventor(s): AMIT BERMAN of TEL-AVIV (IL) for samsung electronics co., ltd., SARIT BUZAGLO of TEL-AVIV (IL) for samsung electronics co., ltd., ARIEL DOUBCHAK of TEL-AVIV (IL) for samsung electronics co., ltd.
IPC Code(s): B60W30/06, B60W40/06, G08G1/14
Abstract: a method of simplified successive cancellation list (sscl) error decoding of s-polar codes includes representing an s-polar code as a perfect binary tree; providing a node v a vector �of soft information from a parent node; computing a vector �of soft information for a left child of node v; providing node v with a vector �of hard decisions from the left child and using it with �to create a soft information vector �and passing it to a right child of node v; providing node v with a vector �of hard decisions from its right child and using it with �to create a hard decision vector, �of hard decisions, and passing it to its parent node; updating, when v is a ileaf of the perfect tree, two path metrics, and selecting paths obtained by expanding current paths with a lowest path metric.
Inventor(s): Fumiaki KATO of Yokohama (JP) for samsung electronics co., ltd., Ha Il KWON of Suwon-si (KR) for samsung electronics co., ltd., Soonmin CHA of Suwon-si (KR) for samsung electronics co., ltd., Naotoshi SUGANUMA of Yokohama (JP) for samsung electronics co., ltd., Yusaku KONISHI of Yokohama (JP) for samsung electronics co., ltd., Norihito ISHII of Yokohama (JP) for samsung electronics co., ltd., Takahiro FUJIYAMA of Yokohama (JP) for samsung electronics co., ltd., Masashi TSUJI of Yokohama (JP) for samsung electronics co., ltd.
IPC Code(s): C08G61/12, H10K85/10
Abstract: a polymer compound for use in an electroluminescent device may improve the durability (particularly the luminescence lifespan). the polymer compound includes structural unit (a) represented by chemical formula (1).
Inventor(s): Fumiaki KATO of Yokohama (JP) for samsung electronics co., ltd., Ha Il KWON of Suwon-si (KR) for samsung electronics co., ltd., Soonmin CHA of Suwon-si (KR) for samsung electronics co., ltd., Naotoshi SUGANUMA of Yokohama (JP) for samsung electronics co., ltd., Yusaku KONISHI of Yokohama (JP) for samsung electronics co., ltd., Norihito ISHII of Yokohama (JP) for samsung electronics co., ltd., Takahiro FUJIYAMA of Yokohama (JP) for samsung electronics co., ltd., Masashi TSUJI of Yokohama (JP) for samsung electronics co., ltd.
IPC Code(s): C08G61/12, H10K85/10
Abstract:
Inventor(s): Fumiaki KATO of Yokohama (JP) for samsung electronics co., ltd., Ha Il KWON of Suwon-si (KR) for samsung electronics co., ltd., Soonmin CHA of Suwon-si (KR) for samsung electronics co., ltd., Naotoshi SUGANUMA of Yokohama (JP) for samsung electronics co., ltd., Yusaku KONISHI of Yokohama (JP) for samsung electronics co., ltd., Norihito ISHII of Yokohama (JP) for samsung electronics co., ltd., Takahiro FUJIYAMA of Yokohama (JP) for samsung electronics co., ltd., Masashi TSUJI of Yokohama (JP) for samsung electronics co., ltd.
IPC Code(s): C08G61/12, H10K85/10
Abstract: in chemical formula (1), the definition of each substituent is as described in the detailed description.
Inventor(s): Choongkeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Youngdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Kwangjoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Yonghwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Dahyun BYEON of Suwon-si (KR) for samsung electronics co., ltd., Seok RHEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C09D7/61, C09D5/00, C09D133/04, C09D167/00, F25D23/02
Abstract: a matting agent-free matt metallic steel sheet for a home appliance, including a primer layer formed on the steel sheet, a basecoat layer formed on the primer layer, a print layer formed on the basecoat layer, and a clearcoat layer formed on the print layer, wherein the clearcoat layer includes an acrylic resin having a weight average molecular weight mw range of 70,000 to 100,000.
20240158979.DRUM-TYPE WASHING MACHINE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yuichi SUZUKI of Yokohama-shi (JP) for samsung electronics co., ltd., Takahiro NAKASHIMA of Yokohama-shi (JP) for samsung electronics co., ltd., Yoshiyuki NISHIOKA of Yokohama-shi (JP) for samsung electronics co., ltd., Hogyo HOSHIYAMA of Yokohama-shi (JP) for samsung electronics co., ltd.
IPC Code(s): D06F37/26, D06F23/02, D06F39/08, F16L55/027
Abstract: a drum-type washing machine including a casing having an inlet through which laundry is loaded and unloaded, a tub arrangeable in the casing so that while the tub is arranged in the casing, an inside of the tub is accessible through the inlet, the tub being able to store water, a drum arrangeable in the tub to rotate about an axis extending in forward and rearward directions while the laundry is loaded into the drum, a plurality of pipe connection portions, arrangeable on a side surface of the tub, to be connected to pipes, and an air-flow noise reduction mechanism, arrangeable in at least one pipe connection portion among the plurality of pipe connection portions, to control air-flow caused by rotation of the drum.
Inventor(s): Sungmin CHO of Suwon-si (KR) for samsung electronics co., ltd., Kookjeong SEO of Suwon-si (KR) for samsung electronics co., ltd., Jinhyun PARK of Suwon-si (KR) for samsung electronics co., ltd., Jongchul JIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F22B1/28
Abstract: a steam generator is disclosed. the steam generator includes: a recovery chamber which includes a first inlet, a second inlet, a steam outlet, and a drain outlet; a first pipe configured to receive water through a first end of the first pipe and which is connected at a second end of the first pipe to the first inlet; a second pipe which is connected at a first end of the second pipe to the drain outlet and is connected at a second end of the second pipe to the second inlet; and a heater device configured to heat water moving through at least one of the first pipe and the second pipe.
20240159400.Adjustable Venting System_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Ivan France of Saratoga CA (US) for samsung electronics co., ltd., Jun Yeon Cho of San Jose CA (US) for samsung electronics co., ltd., Yufeng Wu of Mountain View CA (US) for samsung electronics co., ltd., William Augustus Workman of San Francisco CA (US) for samsung electronics co., ltd., Eun Seo Cho of Mountain View CA (US) for samsung electronics co., ltd., Stefan van der Hoff of Sunnyvale CA (US) for samsung electronics co., ltd.
IPC Code(s): F24C15/20, G06T7/30, G06V10/20
Abstract: in one embodiment, a method includes determining, by a computing device, a location of a source of air contamination associated with a heating element and determining, based at least on the location of the source of air contamination, at least one of an optimal venting location or an optimal venting size of at least one vent of a venting system. the method further includes at least one of: (1) automatically adjusting a respective current location of the at least one vent of the venting system to a respective subsequent location based on the determined optimal venting location; or (2) automatically adjusting a respective current size of the at least one vent of the venting system to a respective subsequent size based on the determined optimal venting size.
Inventor(s): Moonki KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F24F13/28, B01D46/00, B01D46/44, B01D46/58, F24F3/167, F24F11/74
Abstract: an air conditioning system includes a temperature control unit, first and second filter units, and clean room equipment. the temperature control unit discharges temperature-controlled purified air through at least one of first or second outlets. the first and second filter units each filter purified air received from the temperature control unit based on using respective first and second filter modules. the first and second filter units include separate, independent housings. the air conditioning system blocks air flow from the temperature control unit into the second filter unit during an operation of the first filter module to filter purified air received at the first filter unit from the temperature control unit, and blocks air flow from the temperature control unit into the first filter unit during an operation of the second filter module to filter purified air received at the second filter unit from the temperature control unit.
20240159447.REFRIGERATOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Changhak LIM of Suwon-si (KR) for samsung electronics co., ltd., Donghwa KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyoseok NOH of Suwon-si (KR) for samsung electronics co., ltd., Sungcheul PARK of Suwon-si (KR) for samsung electronics co., ltd., Taeyun JUNG of Suwon-si (KR) for samsung electronics co., ltd., Changhun CHO of Suwon-si (KR) for samsung electronics co., ltd., Sangyoul CHA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F25D21/04
Abstract: disclosed herein is a refrigerator including an inner case having a storage compartment therein and including a plurality of plates each formed by injection molding, an outer case coupled to the outside of the inner case to form the exterior thereof, and a hot pipe seated on a front flange of the inner case to prevents dew from forming on the outer case, wherein the inner case includes a seating groove provided on the front flange to seat the hot pipe, and a plurality of ribs provided within the seating groove and formed integrally with the inner case so that the hot pipe is in close contact with the outer case.
20240159453.REFRIGERATOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hongrin KIM of Suwon-si (KR) for samsung electronics co., ltd., Joongho KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeongman NAM of Suwon-si (KR) for samsung electronics co., ltd., Younggon PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F25D23/02
Abstract: a refrigerator includes: a main body forming a storage chamber; a first door rotatably coupled to the main body to open and close at least a portion of the storage chamber; a second door adjacent to the first door and rotatably coupled to the main body to open and close at least another portion of the storage chamber; and a rotating bar rotatably coupled to the first door and configured to cover a gap between the first door and the second door when the first door and the second door are closed, wherein the rotating bar may include: a case; a case cover coupled to the case, the case cover and the case together forming an inner space; and a foamed heat insulator disposed in the inner space and couples the case and the case cover to each other.
20240159457.REFRIGERATOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Taeyun JUNG of Suwon-si (KR) for samsung electronics co., ltd., Yonghyun KANG of Suwon-si (KR) for samsung electronics co., ltd., Donghwa KIM of Suwon-si (KR) for samsung electronics co., ltd., Jungkeun PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F25D23/06
Abstract: disclosed herein is a refrigerator including an inner case forming a storage compartment and including a mount with a connecting protrusion in which a connection hole is formed, an outer case coupled to an outside of the inner case, an insulation provided between the inner case and the outer case, an electrical component attached to the mount, a wire electrically connected to the electrical component through the connection hole, and a wire guide fitted into the connection hole to guide the wire.
Inventor(s): Sungmin Jang of Suwon-si (KR) for samsung electronics co., ltd., Chiwon Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F26B21/10, F26B23/04
Abstract: provided is an air dryer including a first tank, a first line through which gas is supplied to an inside of the first tank, a heater configured to heat the gas, and a first heater line through which the gas is supplied to the heater, wherein the heater includes a housing having a shape extending in a first direction, and having a space formed therein, a plurality of baffles arranged in the housing to be substantially parallel to a first plane, and separated from each other in the first direction, and a hot wire passing through each of the plurality of, wherein the plurality of baffles include a first baffle having a plurality of first holes and a second baffle having a plurality of first holes formed in a second region other than the first region to extend in the first direction.
Inventor(s): Sunghee LEE of Suwon-si (KR) for samsung electronics co., ltd., Jiho BAEK of Suwon-si (KR) for samsung electronics co., ltd., Hyunwuk KANG of Suwon-si (KR) for samsung electronics co., ltd., Duhan JUNG of Suwon-si (KR) for samsung electronics co., ltd., Jaewoo CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F28D7/10
Abstract: a heat exchanger including an inner tube including a bending portion, a first heat exchange portion extending from the bending portion, and a second heat exchange portion extending from the bending portion; a first outer tube forming a first double-tube structure around the first heat exchange portion; a second outer tube forming a second double-tube structure around the second heat exchange portion; and a first connection tube connecting a first through hole of the first outer tube and a second through hole of the second outer tube so as to connect the first outer tube and the second outer tube, wherein a first refrigerant is flowable through the heat exchange portions and the bending portion, a second refrigerant is flowable through the outer tubes and the first connection tube, and the second refrigerant exchanges heat with the first refrigerant at boundaries between the respective outer tubes and heat exchange portions.
Inventor(s): Chul Joon HEO of Suwon-si (KR) for samsung electronics co., ltd., Hwijoung SEO of Suwon-si (KR) for samsung electronics co., ltd., Sungyoung YUN of Suwon-si (KR) for samsung electronics co., ltd., Hyeong-Ju KIM of Suwon-si (KR) for samsung electronics co., ltd., Kyung Bae PARK of Suwon-si (KR) for samsung electronics co., ltd., Feifei FANG of Suwon-si (KR) for samsung electronics co., ltd., Younhee LIM of Suwon-si (KR) for samsung electronics co., ltd., Tae Jin CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01J1/44, H10K39/34
Abstract: a sensor may include a reflective electrode, a photoelectric conversion layer on the reflective electrode and including one or more photoelectric conversion materials, a semi-transmissive electrode on the photoelectric conversion layer, a light transmitting buffer layer on the semi-transmissive electrode, and a semi-transmissive auxiliary layer on the light transmitting buffer layer.
Inventor(s): Sejin OH of Suwon-si (KR) for samsung electronics co., ltd., Sunggil KANG of Suwon-si (KR) for samsung electronics co., ltd., Sangki NAM of Suwon-si (KR) for samsung electronics co., ltd., Jeongmin BANG of Suwon-si (KR) for samsung electronics co., ltd., Dougyong SUNG of Suwon-si (KR) for samsung electronics co., ltd., Yeongkwang LEE of Suwon-si (KR) for samsung electronics co., ltd., Sungho JANG of Suwon-si (KR) for samsung electronics co., ltd., Jonghun PI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01N21/25, G01N21/31, H01L21/67
Abstract: provided is an apparatus configured to measure radical spatial density distribution including a process chamber including a viewport, a driving device configured to move a moving wall inside the process chamber, a light source configured to generate light, a collimator disposed in the viewport of the process chamber and configured to transmit light received from the light source to the moving wall and receive light reflected from the moving wall, and a spectrometer configured to receive the reflected light from the collimator, and measure radical spatial density based on analyzing an absorption amount of a spectrum of the received light.
Inventor(s): Jaecheol Lee of Suwon-si (KR) for samsung electronics co., ltd., Heeyeon Lim of Suwon-si (KR) for samsung electronics co., ltd., Taeheon Lee of Suwon-si (KR) for samsung electronics co., ltd., Doecook Kim of Suwon-si (KR) for samsung electronics co., ltd., Taesung Kang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01R31/317, G01R31/3183
Abstract: a method of generating a fuse configuration for trimming a circuit includes evaluating characteristics, corresponding to each of a plurality of fuse configurations, of the circuit trimmed based on the plurality of fuse configurations respectively, selecting at least one fuse configuration from among the plurality of fuse configurations, based on a result of the evaluating the characteristics of the circuit, calculating a contribution information by calculating a degree of influence of fuse data of each of the plurality of fuse configurations to the characteristics of the circuit, based on the plurality of fuse configurations and the characteristics, and generating at least one new fuse configuration, based on the selected at least one fuse configuration and the contribution information.
Inventor(s): Kyusik CHOI of Suwon-si (KR) for samsung electronics co., ltd., Seungnyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongil SON of Suwon-si (KR) for samsung electronics co., ltd., Jongmin YOON of Suwon-si (KR) for samsung electronics co., ltd., Seungjoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Gisoo LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02B27/01, G02B27/00
Abstract: a wearable device configured to adjust light transmittance according to illuminance of an external light source and a method for controlling the same are provided. the wearable device includes at least one camera, at least one lens, and at least one processor, wherein the at least one processor may be configured to identify illuminance information of an image obtained through the at least one camera, determine a location on the at least one lens, based on the identified illuminance information, the location corresponding to the illuminance information, determine an average illuminance of the image, based on the illuminance information corresponding to the determined location, and compare illuminance information corresponding to the determined location with the average illuminance, and partially adjust light transmittance of the at least one lens, based on a result of the comparison.
Inventor(s): Kyunghwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaesung PARK of Suwon-si (KR) for samsung electronics co., ltd., Daesun OH of Suwon-si (KR) for samsung electronics co., ltd., Jonghee HAN of Suwon-si (KR) for samsung electronics co., ltd., Woosung CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Hyunah KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02B27/12, G02B5/04, G02F1/29, G03B21/20, H04N9/31
Abstract: provided are an electronic device and/or a controlling method thereof. the electronic device may include a projection part; a memory storing at least one instruction; and at least one processor. the projection part may include a split prism for transmitting a part of light emitted from a light source in a front direction and reflecting a remaining part of light on at least one inclined surface in a lateral direction. the processor may be configured to convert an image corresponding to a received signal into a multi-sided image to be projected to a plurality of projection surfaces, and control the projection part to project the converted multi-sided image to the plurality of projection surfaces through the split prism.
Inventor(s): Wooyong JUNG of Suwon-si (KR) for samsung electronics co., ltd., Dohun KIM of Suwon-si (KR) for samsung electronics co., ltd., Joonhyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeongjin LEE of Suwon-si (KR) for samsung electronics co., ltd., Seungyoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Chan HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/00, H01L21/027
Abstract: provided are an overlay correction method for effectively correcting an overlay due to degradation of a wafer table, and an exposure method and a semiconductor device manufacturing method, which include the overlay correction method, wherein the overlay correction method includes acquiring leveling data regarding a wafer, converting the leveling data into overlay data, splitting a shot into sub-shots via shot size split, extracting a model for each sub-shot from the overlay data, and correcting an overlay parameter of exposure equipment on the basis of the model for each sub-shot, wherein the correction of the overlay parameter is applied in real time to an exposure process for the wafer in a feedforward method.
Inventor(s): Sejeong OH of Suwon-si (KR) for samsung electronics co., ltd., Kihun EOM of Suwon-si (KR) for samsung electronics co., ltd., Sungnam JEONG of Suwon-si (KR) for samsung electronics co., ltd., Taekeun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G04G21/00, G01P3/44, G04G17/04, G04G99/00
Abstract: according to various embodiments, an electronic device may comprise: a front cover; a rear cover disposed opposite to the front cover; an annular portion including a side portion surrounding at least a part of the space between the front cover and the rear cover, and including a display at least partially disposed along the front cover and at least one magnetic member, comprising a magnetic material, arranged at a specified first angle and a specified first distance with respect to the center of the display; a first hall sensor disposed at a specified second distance from the center of the display; a second hall sensor disposed at the specified second distance from the center of the display and spaced a second angle smaller than the first angle apart from the first hall sensor; a memory; and at least one processor, comprising processing circuitry, operatively connected to the memory. at least one processor, individually and/or collectively, may be configured to: acquire first magnetic information corresponding to the at least one magnetic member based on the first hall sensor; acquire second magnetic information corresponding to the at least one magnetic member based on the second hall sensor; based on the first magnetic information and the second magnetic information, identify whether the annular member rotates; and in response to rotation of the annular member, control a user interface displayed through the display.
Inventor(s): Bhargav KRISHNAMURTHY of Karnataka (IN) for samsung electronics co., ltd., Ankit TAPARIA of Karnataka (IN) for samsung electronics co., ltd.
IPC Code(s): G06F3/01
Abstract: a method of controlling an electronic device for enabling a context transfer from a virtual session to an environment external to the virtual session, includes detecting at least one user in an a virtual session; based on detecting the at least one user, obtaining a context of at least one virtual device content present in the virtual session, based on detecting the at least one user; obtaining at least one user interest related with the at least one virtual device content using at least one user input in the virtual session; obtaining correlation information between the at least one user interest and at least one content capability of a plurality of real world user devices of the at least one user; and providing at least one real world user device, among the plurality of user devices, to the at least one user for transferring the context of the at least one virtual device content based on the correlation information.
Inventor(s): Okyun KWON of Suwon-si (KR) for samsung electronics co., ltd., Seongui SEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/023, G06F3/01
Abstract: a character input keyboard including a first key area where character keys corresponding to a first character group are arranged, a second key area where character keys corresponding to a second character group are arranged, and a conversion key arranged between the first key area and the second key area. a processor is configured to display a first character corresponding to a selected character key based on selection of a character key in the first key area or the second key area, and display a second character associated with the first character in place of the first character based on selection of the conversion key while the first character is being displayed.
Inventor(s): Minho KIM of Suwon-si (KR) for samsung electronics co., ltd., Juyong CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jinhyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jongwoon JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/0482, G06F1/16, G06F3/0486, G06F3/0488, G06F3/14, G06F3/16, G06F16/24
Abstract: an electronic device is provided. the electronic device includes a display and a processor, wherein the processor is set to control the display to display an execution screen of a camera application through a first region of the display and display an image list linked with the camera application through a second region different from the first region of the display in response to the execution of the camera application, the image list including a plurality of images and the plurality of images including still images and moving images, acquire a first image captured using the camera application in response to an image capture request, control the display to display a first temporary image corresponding to the first image in the image list through the second region when it is determined that post-processing of the first image is required, and control the display to display a first post-processed image.
Inventor(s): Eunjin LEE of Suwon-si (KR) for samsung electronics co., ltd., Haeree NA of Suwon-si (KR) for samsung electronics co., ltd., Jibum MOON of Suwon-si (KR) for samsung electronics co., ltd., Haein LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/0484, G06F9/451
Abstract: provided is an electronic apparatus that includes: a display; a communication interface; a memory storing at least one instruction; and at least one processor operatively connected with the display, the communication interface, and the memory. the electronic apparatus is configured to: based on identifying a capture event, obtain a first image that captures a screen of an external apparatus providing a first content, and obtain a second image that captures a screen of the display providing a second content, the external apparatus being communicatively connected, through the communication interface, with the electronic apparatus, obtain a third image comprising the first content and the second content based on the first image and the second image, and store the third image in the memory.
Inventor(s): Yang Seok Ki of Palo Alto CA (US) for samsung electronics co., ltd., Yangwook Kang of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
Abstract: provided is a method for data storage, the method including receiving, by a first storage device, information from a first group of resources for performing a first function on the first storage device using a first implementation, based on the first storage device including the first implementation and being associated with a second group of resources corresponding to the first group of resources.
Inventor(s): Changhwi Park of Suwon-si (KR) for samsung electronics co., ltd., Junyoung Ko of Suwon-si (KR) for samsung electronics co., ltd., Jungmin Bak of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
Abstract: a memory device may include a time counter which is configured to output a count signal according to a predetermined time interval; a use history circuit which is configured to write an operating time value based on the count signal and generate and write a validation value corresponding to the operating time value; and a command decoder which is configured to receive an instruction from a memory controller. the instruction may be according to an operation mode that is determined based on the operating time value and the validation value.
Inventor(s): Daniel Lee HELMICK of Broomfield CO (US) for samsung electronics co., ltd., Chun-Chu Chen-Jhy Archie WU of San Carlos CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
Abstract: provided is a method for managing a data migration operation, including creating, by a storage device, a read submission queue entry indicating a location of data at a source storage of the storage device to be copied from the source storage to a target storage, the read submission queue entry including a field including metadata including information for reading the data from the source storage.
Inventor(s): Ramdas P. KACHARE of Pleasanton CA (US) for samsung electronics co., ltd., Sungwook RYU of Palo Alto CA (US) for samsung electronics co., ltd., Yang Seok KI of Palo Alto CA (US) for samsung electronics co., ltd., Sanghun JUN of San Jose CA (US) for samsung electronics co., ltd., Oscar P. PINTO of San Jose CA (US) for samsung electronics co., ltd., Karnik SHAH of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
Abstract: a storage device may include a storage medium, a storage device controller coupled to the storage medium, a host interface coupled to the storage device controller, and an attachable module interface configured to connect an attachable compute module to the storage device controller. the attachable module interface may include a data interface, a side-band interface, and/or a power interface. the attachable module interface may include a connector configured to connect the attachable compute module to the storage device controller. the storage device may include an enclosure having an opening configured to enable the attachable compute module to be connected to the attachable module interface through the opening. the storage device controller may be configured to utilize one or more resources of the attachable compute module. the storage device controller may be configured to communicate with the attachable compute module through one or more command extensions of a storage protocol.
Inventor(s): Deukgeun AHN of Suwon-si (KR) for samsung electronics co., ltd., Jaehyang Lee of Suwon-si (KR) for samsung electronics co., ltd., Hyeokjun Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/14, G09G3/32
Abstract: a modular display apparatus is disclosed. the modular display apparatus includes a plurality of display modules, and a controller configured to control the plurality of display modules, and the plurality of display modules include a plurality of scan groups, respectively, the controller is configured to transmit an image signal corresponding to the respective display modules based on an image frame, and the respective scan groups included in a first display module from among the plurality of display modules includes a plurality of scan lines arranged in one direction, a plurality of data lines arranged in a direction perpendicular to the plurality of scan lines, light emitting diodes generated at a cross area of the scan lines and the data lines, and at least one driver integrated circuit.
Inventor(s): Gajin SONG of Suwon-si (KR) for samsung electronics co., ltd., Hoseon SHIN of Suwon-si (KR) for samsung electronics co., ltd., Dongchoon HWANG of Suwon-si (KR) for samsung electronics co., ltd., Kyungtae KIM of Suwon-si (KR) for samsung electronics co., ltd., Kanghee LEE of Suwon-si (KR) for samsung electronics co., ltd., Woojung HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/16, G06F3/01
Abstract: an example server for constructing a virtual space includes a memory configured to store computer-executable instructions and a processor configured to execute the instructions by accessing the memory. the instructions, when executed, cause the processor to extract first partial voice data corresponding to a target utterance from voice data of a first user received from a terminal of the first user among users in the virtual space; instruct a target terminal of the target user to reproduce the first partial voice data; and, based on transmission of second partial voice data of a second user to the target user being requested while the target terminal reproduces the first partial voice data, instruct the target terminal to display visual information generated based on the second partial voice data.
Inventor(s): Dongyul LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaeyung YEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/16, G10L15/01, G10L15/06, G10L15/30
Abstract: an electronic device disclosed in the present disclosure may comprise: a user interface comprising interface circuitry; at least one processor comprising processing circuitry operatively connected to the user interface; and a memory operatively connected to at least one processor, wherein the memory stores instructions, at least one processor configured to: infer an expected operation corresponding to an input received using the user interface; derive required performance information for the expected operation; and based on the derived required performance information, configure an operating frequency using an artificial intelligence (ai) dynamic voltage frequency scaling (dvfs) manager.
Inventor(s): Zhou SI of Suwon-si (KR) for samsung electronics co., ltd., Fan SHEN of Suwon-si (KR) for samsung electronics co., ltd., Ning Li of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F8/65, G06F8/71
Abstract: a firmware upgrade method of a network storage includes inquiring, by the network storage, about a latest firmware version for the network storage from a firmware upgrade platform through a network, and based on the latest firmware version being inconsistent with a current firmware version of the network storage, downloading, by the network storage, the latest firmware version from the firmware upgrade platform through the network and performing a firmware upgrade based on the latest firmware version.
Inventor(s): Keeho SONG of Suwon-si (KR) for samsung electronics co., ltd., Hoshin SON of Suwon-si (KR) for samsung electronics co., ltd., Sungwon KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F9/451, H04L67/303
Abstract: a method is performed by an electronic device. the method includes: obtaining an application use history of the electronic device; determining first applications of the electronic device, based on the application use history of the electronic device; identifying a user group including a user of the electronic device, based on information about the first applications; performing an correlation analysis with respect to a plurality of applications including the first applications, based on an application use history of other electronic devices of the user group; based on a result of the correlation analysis and the information about the one or more first applications, determining one or more second applications to be recommended to the user of the electronic device; generating a personalized application menu including the first applications and the second applications; and displaying the personalized application menu.
Inventor(s): PEIWEI LI of SUWON-SI (KR) for samsung electronics co., ltd., GAOFEI LV of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G06F9/455
Abstract: an access method of a storage device and a virtual device are provided. the storage device supports a single root input output virtualization (sr-iov), the storage device is virtualized as at least two virtual functions (vfs), the access method comprises: in response to an input/output (i/o) request for the storage device by an application, transmitting the i/o request to a corresponding vf by a virtual machine, the vf writing a completion message of the i/o request to a completion queue (cq); querying the cq in a polling manner by a processor of the virtual machine; and if there is the completion message of the i/o request in the cq, returning the completion message to the application by the virtual machine. since the storage virtualization system processes i/o requests in a polling manner, this manner avoids the delay and overhead caused by the interruption, and enables the application to improve i/o efficiency, and finally enables the random parallel read and write performance of the virtual machine using sr-iov technology to allocate high-speed ssds, to be improved significantly.
Inventor(s): Hamzah ABDELAZIZ of Santa Clara CA (US) for samsung electronics co., ltd., Joseph HASSOUN of Los Gatos CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F9/50, G06F9/54
Abstract: an accelerator core includes first and second buffers and at least one group of k processing elements. the first buffer receives at least one group of block-wise sparsified first elements. a block size (k,c) of each group of block-wise sparsified first elements includes k rows and c columns in which k is greater than or equal to 2, k times p equals k, and c times q equals c in which k is an output channel dimension of a tensor of first elements, c is a number of input channels of the tensor of first elements, p is an integer and q is an integer. the second buffer receive second elements. each respective group of processing elements receive k rows of first elements from a block of first elements corresponding to the group of pes, and receives second elements that correspond to first elements received from the first buffer.
Inventor(s): Heeseok EUN of Suwon-si (KR) for samsung electronics co., ltd., Dongouk MOON of Suwon-si (KR) for samsung electronics co., ltd., Seunghan LEE of Suwon-si (KR) for samsung electronics co., ltd., Sooyoung JI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F9/50
Abstract: a storage system is provided. the system includes: a network interface device configured to communicate with a host and including a first computing circuit configured to support first offloading functions and first algorithms corresponding thereto; a computing storage device configured to store data and including a second computing circuit configured to support second offloading functions and second algorithms corresponding thereto; and a system controller configured to perform a management operation to control an offloading computing operation to be performed by one of the first computing circuit and the second computing circuit according to an offloading request of the host, based on offload capability information about the first offloading functions, the second offloading functions, the first algorithms, and the second algorithms.
Inventor(s): Wenwen HAO of SUWON-SI (KR) for samsung electronics co., ltd., Yuqi ZHANG of SUWON-SI (KR) for samsung electronics co., ltd., Chankyu KOH of SUWON-SI (KR) for samsung electronics co., ltd., Yongwong KWON of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/07
Abstract: a failure prediction apparatus and method for storage devices are provided, the method including: obtaining attribute information of a plurality of attributes for a plurality of storage devices during operation of a storage apparatus; obtaining global attribute information for each of the plurality of storage devices based on the attribute information of the plurality of attributes obtained within a first time window before the current time; and predicting failures for the plurality of storage devices using a trained machine-learning model based on attribute information of the plurality of attributes of each of the plurality of storage devices obtained within a second time window before the current time and the global attribute information of each of the plurality of storage devices.
Inventor(s): Ganggyu LEE of Suwon-si (KR) for samsung electronics co., ltd., Insup Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/14, G06F11/30
Abstract: in a data backup method of a storage device, environment information is received from at least one environmental sensor such that an operating environment in which the storage device is operating is monitored. an event detection signal is generated based on the environment information. in response to generating the event detection signal at least first data is immediately backed up to an external device located outside the storage device. the storage device includes a first port configured to be used to store the plurality of data in the storage device, and a second port different from the first port. in response to generating the event detection signal, the at least first data among the plurality of data are immediately output from the storage device through the second port.
Inventor(s): Junchul CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/10
Abstract: disclosed is a storage device including a nonvolatile memory and a storage controller connected to the nonvolatile memory through a plurality of channels and controlling the nonvolatile memory. the storage controller is configured to receive a command from a host device, check a workload of a mapping channel, to which the command is to be allocated, from among the plurality of channels, and queue the command without allocating the command to the mapping channel in response to the workload of the mapping channel exceeding a threshold workload, increase the workload of the mapping channel in response to the workload of the mapping channel not being greater than the threshold workload, and allocate a descriptor for performing an operation according to the command to the command.
Inventor(s): Ho Young KIM of Suwon-si (KR) for samsung electronics co., ltd., Min Sik KIM of Seoul (KR) for samsung electronics co., ltd., Won Woo RO of Seoul (KR) for samsung electronics co., ltd., Se Hyun YANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F17/16, G06F16/22
Abstract: a method of operating a network switch for collective communication includes: receiving, via a network from external electronic devices, a first and second matrix each formatted according to a sparse matrix storage format; and generating a third matrix formatted according to the sparse matrix storage format, wherein the third matrix is generated by combining the first and second matrix according to the sparse matrix storage format, wherein, according to the sparse matrix storage format the first matrix includes first matrix positions of respective first element values and the second matrix includes second matrix positions of respective second element values, and wherein the combining includes comparing the first matrix positions with the second matrix positions.
Inventor(s): Youngjae PARK of Suwon-si (KR) for samsung electronics co., ltd., Seungki HONG of Suwon-si (KR) for samsung electronics co., ltd., Hyunbo KIM of Suwon-si (KR) for samsung electronics co., ltd., Insu CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F21/55
Abstract: provided is a memory device including a memory cell array including a plurality of memory cell rows, the plurality of memory cell rows being grouped into a plurality of segments, a row decoder connected to the plurality of memory cell rows, and a refresh control circuit configured to generate a refresh control signal for controlling a refresh operation on the plurality of memory cell rows.
Inventor(s): Yonghwan SONG of Suwon-si (KR) for samsung electronics co., ltd., Jisoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Jimin RYU of Suwon-si (KR) for samsung electronics co., ltd., Younsung CHU of Suwon-si (KR) for samsung electronics co., ltd., Jaegyu LEE of Suwon-si (KR) for samsung electronics co., ltd., Daejin JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F21/79, G06F21/60, G06F21/64
Abstract: provided are an operating method of a storage device and an operating method of a storage system including the storage device. an operating method of a storage device including a nonvolatile memory device and a storage controller includes storing, by the storage controller, a public key received from a first host, transmitting, by the storage controller, a random number to a second host in response to a host authentication start request from the second host that has obtained the public key and a private key corresponding to the public key, receiving, by the storage controller, a signature generated based on the private key and the random number from the second host, verifying, by the storage controller, the signature based on the public key, and changing, by the storage controller, a first device parameter according to a request from the second host in response to the signature being verified.
Inventor(s): Sangchul Yeo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F30/398, G03F1/36, H01L21/027
Abstract: in a method of training a deep learning model for optical proximity correction, sample input images associated with sample layouts may be obtained, where the sample layouts are targets of the optical proximity correction. sample reference images that correspond to the sample input images may be extracted from sample masks that are fabricated by performing the optical proximity correction on the sample layouts. a training operation may be performed on the deep learning model used in the optical proximity correction based on the sample input images and the sample reference images. the sample layouts may include sample layout patterns to form process patterns of a semiconductor device. the sample input images may include images of corner portions of the sample layout patterns. the deep learning model may be used to perform a corner rounding operation on the corner portions of the sample layout patterns.
Inventor(s): Yajie BAO of Sandy Springs GA (US) for samsung electronics co., ltd., Tianwei XING of Santa Clara CA (US) for samsung electronics co., ltd., Xun CHEN of Fremont CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F40/205, G06F16/2457
Abstract: a method of performing visual question answering (vqa), including: obtaining an image and a question corresponding to the image; generating a plurality of feature predictions about at least one object included in the image by providing the image to an artificial intelligence (ai) scene perception model; generating a plurality of symbolic programs and a plurality of program confidence scores by providing the question to an ai question parsing model; selecting a symbolic program associated with a program confidence score which is highest among the plurality of program confidence scores; executing the selected symbolic program by performing a set of logic operations included in the selected symbolic program on the plurality of feature predictions; and determining a natural language answer to the question based on a result of the set of logic operations.
Inventor(s): Sungjun LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F40/44, G06F40/47, G06F40/51
Abstract: an electronic device and a controlling method of the electronic device are disclosed. in particular, the electronic device according to the disclosure includes a communicator, a memory configured to store information on an encoder and learning data for learning of the encoder, and a processor configured to, based on acquiring information on an original text of a first language, input the information on the original text into the encoder, and acquire a first encoding vector indicating semantic information included in the original text, input the first encoding vector into a discriminator, and acquire a probability value indicating a probability that the first encoding vector would correspond to a normal translation, based on the probability value being greater than or equal to a predetermined first threshold value, control the communicator to transmit the first encoding vector to an external device including a decoder for acquiring a translation text of a second language corresponding to the original text, and based on the probability value being smaller than the first threshold value, identify a second encoding vector having the highest similarity value indicating similarity to the first encoding vector among encoding vectors included in the learning data, and control the communicator to transmit the identified second encoding vector to the external device.
Inventor(s): Joonghoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangha Kim of Suwon-si (KR) for samsung electronics co., ltd., Jiwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Sangil Park of Suwon-si (KR) for samsung electronics co., ltd., Sohyun Park of Suwon-si (KR) for samsung electronics co., ltd., Taehwan Yoo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F40/58, G06F40/253
Abstract: an electronic apparatus includes a memory configured to store instructions, and a processor configured to execute the instructions to receive a text of a first language, generate, based on the text of the first language, style information indicating a translation style to be applied to the text of the first language and machine-translate the text of the first language into text of a second language based on the generated style information.
Inventor(s): Prateek KESERWANI of Bengaluru (IN) for samsung electronics co., ltd., Srinivas Soumitri MIRIYALA of Bengaluru (IN) for samsung electronics co., ltd., Vikram Nelvoy RAJENDIRAN of Bengaluru (IN) for samsung electronics co., ltd., Pradeep NELAHONNE SHIVAMURTHAPPA of Bangaluru (IN) for samsung electronics co., ltd.
IPC Code(s): G06N3/04
Abstract: a method for selecting an artificial intelligence (ai) model in neural architecture search, includes: measuring a scale of receptive field for a plurality of neural network layers corresponding to each of a plurality of candidate ai models; determining a first score for a first group of neural network layers among the plurality of neural network layers based on the scale of the receptive field for the first group of neural network layers, the scale of the receptive field for each of the first group of neural network layers being smaller than a size of an object; determining a second score for a second group of neural network layers among the plurality of neural network layers based on the scale of the receptive field for the second group of neural network layers, the scale of the receptive field for each of the second group of neural network layers being greater than the size of the object; determining a third score for each of the plurality of candidate ai models as a function of the first score and the second score; and selecting, based on the third score, a candidate ai model among the plurality of candidate ai models for training and deployment, the candidate ai model having a highest third score among the third scores of the plurality of candidate ai models.
Inventor(s): Heewon KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyun Sung CHANG of Suwon-si (KR) for samsung electronics co., ltd., Jaeyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Kiho CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N20/00
Abstract: a processor-implemented method includes training a first model to predict confidences of labels for data samples in a training dataset, including using a corrected data sample obtained by correcting an incorrect label based on a corresponding confidence detected by the first model and an estimated corrected label generated by a second model; training the second model to estimate correct labels for the data samples, including estimating a correct other label corresponding to another incorrect label detected based on a corresponding confidence generated by the first model with respect to the other incorrect label; and automatically correcting the other incorrect label with the estimated correct other label.
Inventor(s): Kiman KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T3/40, G06T7/13, H04N7/01
Abstract: an image processing device includes a memory configured to store instruction thereon; and a processing circuitry configured to execute the instructions. the processing circuitry is configured to execute the instructions to cause the image processing device to divide input video data into a plurality of input video sub-data corresponding to a plurality of sub-areas, generate a plurality of output video sub-data by performing image processing operations on the plurality of input video sub-data, respectively, generate output video data corresponding to the input video data by merging the plurality of output video sub-data. each of the plurality of input video sub-data includes main input sub-data corresponding to a respective sub-area among the plurality of sub-areas, and boundary input sub-data corresponding to a portion of an adjacent sub-area adjacent to the respective sub-area among the plurality of sub-areas.
Inventor(s): Kinam Kwon of Suwon-si (KR) for samsung electronics co., ltd., Heewon Kim of Seoul (KR) for samsung electronics co., ltd., Kyoung Mu Lee of Seoul (KR) for samsung electronics co., ltd., Hyong Euk Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T3/40, G06V10/82
Abstract: a neural network-based image processing method and apparatus are provided. the method includes receiving an input image having a first resolution, and estimating a preview image of the input image having a second resolution that is lower than the first resolution by using a neural network model.
Inventor(s): Jaeyoung MOON of Suwon-si (KR) for samsung electronics co., ltd., Nahyup KANG of Suwon-si (KR) for samsung electronics co., ltd., Hanjun KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeonseung YU of Suwon-si (KR) for samsung electronics co., ltd., Juyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Hwiryong JUNG of Suwon-si (KR) for samsung electronics co., ltd., Inwoo HA of Suwon-si (KR) for samsung electronics co., ltd., Seokpyo HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T3/40, G06T3/00, G06T5/00, G06T5/50, G06T7/20
Abstract: a supersampling method and apparatus are provided. the method includes: receiving a low-resolution three-dimensional (3d) image comprising a current frame and receiving a previous frame preceding the current frame; generating a low-resolution partial image by repeatedly sampling sub-pixel regions of the current frame; warping a high-resolution image, of the previous frame, which has been outputted from a neural network, to a current view corresponding to the current frame; replacing a partial region of the warped high-resolution image of the previous frame with image data from the low-resolution partial image; and generating a high-resolution image of the current frame by applying the high-resolution image of the previous frame, in which the partial region has been replaced, to the neural network.
Inventor(s): Hwiryong JUNG of Suwon-si (KR) for samsung electronics co., ltd., Nahyup KANG of Suwon-si (KR) for samsung electronics co., ltd., Hanjun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaeyoung MOON of Suwon-si (KR) for samsung electronics co., ltd., Hyeonseung YU of Suwon-si (KR) for samsung electronics co., ltd., Juyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Inwoo HA of Suwon-si (KR) for samsung electronics co., ltd., Seokpyo HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T3/40, G06T7/246, G06V10/75
Abstract: an adaptive super sampling method includes: rendering frames of a three-dimensional (3d) model, the frames including a current frame and a previous frame preceding the current frame; determining motion vectors indicating a correspondence relationship between pixels in the current frame and pixels in the previous frame; generating a geometric identifier maps (g-id maps) respectively corresponding to the current frame and the previous frame based on 3d geometrical properties associated with the pixels in the current frame and the previous frame; based on the motion vectors and the g-id maps, generating an artifact map predicting where artifacts will occur from inter-frame super sampling of the current frame; and performing adaptive super sampling on the current frame based on the artifact map.
Inventor(s): Seungju HAN of Suwon-si (KR) for samsung electronics co., ltd., Hui LI of Xi’an (CN) for samsung electronics co., ltd.
IPC Code(s): G06T3/40, G06V10/77, G06V10/80, G06V10/82, G06V40/16
Abstract: an electronic device and a processor-implemented method with image processing are provided. the processor-implemented method comprises generating an initial image feature matrix of a face image based on a multi-level feature map of the face image; generating an initial face priori feature matrix of the face image based on a final level feature map of the multi-level feature map; and generating a super-resolution image of the face image and/or key point coordinates of the face image by using one or more encoders, based on the initial image feature matrix and the initial face priori feature matrix, wherein, when the one or more encoders are plural encoders, they are cascaded.
Inventor(s): Wonhee LEE of Suwon-si (KR) for samsung electronics co., ltd., Seungeon KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T5/00, G06T5/50
Abstract: an electronic device, including one or more processors configured to execute instructions; and a memory storing the instructions which, when executed by the one or more processors, configures the one or more processors to generate high-quality feature data of a current frame, by implementing a feature restoration model that is provided reference feature data, received by an electronic device, and corresponding to compressed feature data of a reference image corresponding to a first time that is different from a second time to which the current frame corresponds, and low-quality feature data received by the electronic device, and corresponding to compressed data of the current frame, that has a lower image quality than the reference image; and generate a current frame of a third image quality higher than the second image quality, based on the high-quality feature data
Inventor(s): Seunghoon JEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T5/50, G06T5/00, G06T7/20, G06T9/00
Abstract: a processor-implemented method includes estimating a transformation model using a transformation determination neural network model, provided motion sensor detected motion data representing motion of an image sensor with respect to a first image frame and a subsequent second image frame from captured by the image sensor, to perform a transformation based on global motion between the first image frame and the second image frame, and generating output image data by combining, by using the transformation model, the first image frame and the second image frame.
Inventor(s): William Augustus Workman of San Francisco CA (US) for samsung electronics co., ltd., Jun Yeon Cho of San Jose CA (US) for samsung electronics co., ltd., Yufeng Wu of Mountain View CA (US) for samsung electronics co., ltd., Eun Seo Cho of Mountain View CA (US) for samsung electronics co., ltd., Stefan van der Hoff of Sunnyvale CA (US) for samsung electronics co., ltd.
IPC Code(s): G06T7/246, A47J36/32, G01J5/08, G06T5/00, G06T7/30, G06T7/73, G06V10/143, G06V10/74, G06V20/52
Abstract: in one embodiment, a method includes accessing an image of a cooking surface, where the image is associated with a field of view that includes the cooking surface. the method further includes identifying, based at least on the image, one or more cookware items within the field of view, associating a unique identifier with each identified cookware item in the field of view, and tracking, using one or more subsequent images of the cooking surface, a location of each of the one or more cookware items relative to the cooking surface.
Inventor(s): Daehwan JUNG of Suwon-si (KR) for samsung electronics co., ltd., Sahnggyu PARK of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/246, B25J9/16, G06T7/60
Abstract: an electronic apparatus includes a contact portion including a plurality of markers, a camera, and at least one processor configured to identify, based on at least one surface of the contact portion contacting an object, at least one displacement of the plurality of markers based on a first image in which a first surface of the contact portion that is opposite to the at least one surface is captured by the camera, and identify, based on the at least one displacement, at least one of an intensity of a force applied to the contact portion and a direction of the force applied to the contact portion, where a first marker of the plurality of markers includes at least one of a form and a color that is different from a second marker of the plurality of markers that is adjacent to the first marker.
Inventor(s): Zhaohui Lv of Xi'an (CN) for samsung electronics co., ltd., Pei You of Xi'an (CN) for samsung electronics co., ltd., Penghui Sun of Xi'an (CN) for samsung electronics co., ltd., Feng Zhu of Xi'an (CN) for samsung electronics co., ltd., Ran Yang of Xi'an (CN) for samsung electronics co., ltd., Huisi Wu of Shenzhen (CN) for samsung electronics co., ltd., Wende Xie of Shenzhen (CN) for samsung electronics co., ltd., Jingyin Lin of Shenzhen (CN) for samsung electronics co., ltd., Zebin Zhao of Shenzhen (CN) for samsung electronics co., ltd., Dong Kyung Nam of Suwon-si (KR) for samsung electronics co., ltd., Jingu Heo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/246, G06V10/77, G06V10/80
Abstract: a method of estimating an optical flow includes processing, using an image processing pass, a first image and a second image separately, and estimating the optical flow based on a second image attention feature map of the first image and a second image attention feature map of the second image. the processing using the image processing pass includes extracting a feature map by encoding an image, outputting a first image fusion attention feature map by fusing row relationship information of the image with the image feature map, outputting a first image attention feature map of the image based on the first image fusion attention feature map and the image feature map, outputting a second image fusion attention feature map by fusing column relationship information of the image with the first image attention feature map, and generating a second image attention feature map of the image based on the second image fusion attention feature map and the first image attention feature map.
Inventor(s): Jiwhan KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungjoo SUH of Suwon-si (KR) for samsung electronics co., ltd., Minsu AHN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/55
Abstract: a method of estimating depth information includes generating a first simulated image using a simulator provided with a first depth map, training an artificial neural network model based on the first depth map and the first simulated image, generating a second depth map by inputting an actual image into the trained artificial neural network model, and generating a second simulated image using the simulator provided with the second depth map.
Inventor(s): Ahyun SEO of Pohang-si (KR) for samsung electronics co., ltd., Minsu CHO of Pohang-si (KR) for samsung electronics co., ltd., Suha KWAK of Pohang-si (KR) for samsung electronics co., ltd., Byungjin KIM of Pohang-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/68, G06V10/764, G06V10/77, G06V10/774, G06V10/82
Abstract: a method may include predicting, using a machine learning model, score maps for each of a plurality of pre-set classes for predetermined symmetry types, using a plurality of pixels included in the feature map, and detecting a symmetry element of the input image based on the predicted score maps.
Inventor(s): Choelmin PARK of Suwon-si (KR) for samsung electronics co., ltd., Sungoh KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaeyung YEO of Suwon-si (KR) for samsung electronics co., ltd., Chungwan HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/70, G06T17/00, G06V20/40
Abstract: an electronic device includes at least one processor that is configured to receive, from an external electronic device, a first signal including a request for arranging a first virtual object in a virtual space. the at least one processor is configured to obtain, by using first user information with respect to the first virtual object and second user information with respect to second virtual objects, a group corresponding to the first virtual object among groups respectively corresponding to second virtual objects. the at least one processor is configured to identify, based on a location of at least one second virtual object included in the group corresponding to the first virtual object, a first location in the virtual space. the at least one processor is configured to transmit, a second signal, to the external electronic device, representing the first virtual object being disposed in the identified first location in the virtual space.
Inventor(s): Sanghun LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaewon BANG of Suwon-si (KR) for samsung electronics co., ltd., Donghyun YEOM of Suwon-si (KR) for samsung electronics co., ltd., Moonsoo CHANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T19/00, G02B27/01, G06V10/762
Abstract: according to an embodiment, a processor of a wearable device displays a first visual object associated with a position viewed through field of view (fov) of a first user. the processor obtains, based on identifying an external electronic device connected to the wearable device, a state of the external electronic device. the processor identifies, based on the state of the external electronic device corresponding to a preset state for displaying a visual object associated with the position, a cluster common to the first user and a second user of the external electronic device. the processor adjusts, based on the identified cluster, the first visual object viewed through the fov to a second visual object indicated by the cluster.
Inventor(s): Sujin JANG of Suwon-si (KR) for samsung electronics co., ltd., Sangpil KIM of Seoul (KR) for samsung electronics co., ltd., Jinkyu KIM of Seoul (KR) for samsung electronics co., ltd., Wonseok ROH of Seoul (KR) for samsung electronics co., ltd., Gyusam CHANG of Seongnam-si (KR) for samsung electronics co., ltd., Dongwook LEE of Suwon-si (KR) for samsung electronics co., ltd., Dae Hyun JI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V10/25, G01S17/86, G01S17/89, G06V10/44, G06V10/74, G06V10/764, G06V10/82
Abstract: a method and apparatus with object detector training is provided. the method includes obtaining first input data and second input data from a target object; obtaining second additional input data by performing data augmentation on the second input data; extracting a first feature to a shared embedding space by inputting the first input data to a first encoder; extracting a second feature to the shared embedding space by inputting the second input data to a second encoder; extracting a second additional feature to the shared embedding space by inputting thesecond additional input data to the second encoder; identifying a first loss function based on the first feature, the second feature, and the second additional feature; identifying a second loss function based on the second feature and the second additional feature; and updating a weight of the second encoder based on the first loss function and the second loss function.
Inventor(s): Seung Wook KIM of Pohang-si (KR) for samsung electronics co., ltd., Minsu CHO of Pohang-si (KR) for samsung electronics co., ltd., Juhong MIN of Pohang-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V10/74, G06T3/40, G06V10/771, G06V10/82
Abstract: a processor-implemented method includes: extracting feature maps respectively corresponding to a plurality of channels based on a convolutional network with respect to two images; generating a matching point map from the feature maps; refining the matching point map by using attention between matching points comprised in the matching point map; and extracting a matching point between the two images from the refined matching point map.
Inventor(s): Kikyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jiwon BAEK of Suwon-si (KR) for samsung electronics co., ltd., Chanho AHN of Suwon-si (KR) for samsung electronics co., ltd., Seungju HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V10/764, G06V10/70
Abstract: disclosed is a method that includes generating a prediction consistency value that indicates a consistency of prediction of an object in an input image with respect to class prediction values for the object in an input image from classification models to which the input image is input, and identifying a class of the object. identifying the class of the object includes, in response to a class type being determined, based on the prediction consistency value, of the object being determined to correspond to a majority class, identifying a class of the object based on a corresponding class prediction value output for the object from a majority class prediction model, and in response to the class type of the object being determined to correspond to a minority class, identifying the class of the object based on another corresponding class prediction value output for the object from a minority class prediction model.
Inventor(s): Jinwuk CHOI of Suwon-si (KR) for samsung electronics co., ltd., Byounghyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Youngin PARK of Suwon-si (KR) for samsung electronics co., ltd., Sangyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Cheulhee HAHM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V30/148, G06F40/166, H04N21/25
Abstract: provided is an electronic device for identifying output content. the electronic device includes: a display; a memory storing at least one instruction; and at least one processor configured to execute the at least one instruction to: recognize a text in an image output through the display, obtain valid data from the recognized text, obtain comparison data for each title of a plurality of titles in a title list, identify comparison data that matches the valid data from among the obtained comparison data, and provide additional information based on a title corresponding to the identified comparison data.
Inventor(s): Seungju HAN of Seoul (KR) for samsung electronics co., ltd., Minsu KO of Suwon-si (KR) for samsung electronics co., ltd., Deoksang KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Jae-Joon HAN of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G06V40/16
Abstract: a facial verification method and apparatus is disclosed. the facial verification method includes detecting a face region in an input image, determining whether the detected face region represents a partial face, in response to a determination that the detected face region represents the partial face, generating a synthesized image by combining image information of the detected face region and reference image information, performing a verification operation with respect to the synthesized image and predetermined first registration information, and indicating whether facial verification of the input image is successful based on a result of the performed verification operation.
Inventor(s): Suna KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinho KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V40/50, G06F21/32, G06F21/44, G06V10/98, G06V40/12, G06V40/13
Abstract: in an embodiment, an electronic device may include a fingerprint sensor, a display module including a touch sensor, and at least one processor operatively connected to the fingerprint sensor and the display module. the at least one processor may be configured to obtain a first touch input of a user to the display module through the touch sensor. the at least one processor may be configured to perform authentication for the user based on a fingerprint image and registered fingerprint information, the fingerprint image being obtained through the fingerprint sensor when the first touch input is obtained. the at least one processor may be configured to identify, based on the authentication for the user being successful, whether the fingerprint image satisfies a first condition for updating the registered fingerprint information. the at least one processor may be configured to identify whether an intensity of the first touch input is greater than or equal to a threshold intensity set for determining whether a touch input to the display module is inputted by the user's finger that is not in contact with a foreign material. the at least one processor is configured to update the registered fingerprint information using the fingerprint image based on identifying that the fingerprint image satisfies the first condition and that the intensity of the first touch input is equal to or greater than the threshold intensity.
Inventor(s): Ji-sang YU of Seoul (KR) for samsung electronics co., ltd., Sang-ha Kim of Seoul (KR) for samsung electronics co., ltd., Jong-youb Ryu of Hwaseong-si (KR) for samsung electronics co., ltd., Yoon-jung Choi of Seoul (KR) for samsung electronics co., ltd., Eun-kyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Jae-won Lee of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/00, G06F40/58, G10L13/04
Abstract: a method and an electronic device for translating a speech signal between a first language and a second language with minimized translation delay by translating fewer than all words of the speech signal according to a level of understanding of the second language by a user that receives the translation.
Inventor(s): Nikolas Andrew BABAEV of Moscow (RU) for samsung electronics co., ltd., Pavel Konstantinovich Andreev of Moscow (RU) for samsung electronics co., ltd., Azat Rustamovich Saginbaev of Moscow (RU) for samsung electronics co., ltd., Ivan Sergeevich Shchekotov of Moscow (RU) for samsung electronics co., ltd.
IPC Code(s): G10L15/18, G10L15/06
Abstract: a neural method model is trained by, in an initial training iteration, training the neural network model in a teacher forcing mode in which an autoregressive channel includes a ground-truth shifted waveform, and outputting predictions of the neural network model; and in at least one additional training iteration, replacing the ground-truth shifted waveform in the autoregressive channel with the predictions of the neural network model obtained in a previous training iteration. an inference may then be performed by providing, for the neural network model, an additional channel containing at least one prediction of the neural network model outputted during training; and performing speech enhancement using the neural network model.
Inventor(s): JeongYeol KIM of Suwon-si (KR) for samsung electronics co., ltd., Kyungtae KIM of Suwon-si (KR) for samsung electronics co., ltd., Gajin SONG of Suwon-si (KR) for samsung electronics co., ltd., Hoseon SHIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/18, G10L15/183
Abstract: an electronic device includes a microphone, a memory and at least one processor. the at least one processor is configured to acquire utterance data corresponding to a voice of a user through the microphone, determine an intent and provide content to the user based on the intent. when intent determination fails, then one or more models are updated using text obtained from the utterance data. the intent determination may fail when there is no verb (predicate) in the user utterance. the models are updated by searching for named entities and determining domains to be used for the model updates. the domains are determined based on categories. the categories are found using a named entity search (nes). examples of categories are music artists, music albums, movie titles, tv program channels, video clip channels, radio programs, and podcast titles.
Inventor(s): Sangmin PARK of Suwon-si (KR) for samsung electronics co., ltd., Gajin SONG of Suwon-si (KR) for samsung electronics co., ltd., Kyungtae KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/22
Abstract: an electronic device includes a memory storing instructions; and a processor electrically connected to the memory and configured to execute the instructions to: receive user utterance data; obtain an utterance-domain data set including candidate utterance data that is based on the user utterance data; generate transformed utterance data associated with the user utterance data based on a language model and the utterance-domain data set; and provide a response corresponding to the user utterance data, based on the transformed utterance data. the utterance-domain data set may include at least one candidate utterance data paired with each of a plurality of domains. each domain of the plurality of domains corresponds to a different operation or function.
Inventor(s): Wonjong CHOI of Suwon-si (KR) for samsung electronics co., ltd., Manun JEONG of Suwon-si (KR) for samsung electronics co., ltd., Cheolseung JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/22, G10L15/04
Abstract: a main device is provided. the main device includes a memory storing function information and importance information of each function of a first sub-device, a communication interface connected to the first sub-device, and at least one processor configured to acquire the function information and importance information of each function of a second sub-device, determine whether at least one function performed by the first sub-device exists among a plurality of functions performed by the second sub-device, determine a device to perform the at least one function based on importance of the at least one function of the second sub-device and importance of the at least one function of the first sub-device, and transmit information on the device to perform the at least one function to the first sub-device and the second sub-device.
Inventor(s): Junesig Sung of Suwon-si (KR) for samsung electronics co., ltd., Seongyeop Jeong of Daejeon (KR) for samsung electronics co., ltd., Jaesik Choi of Daejeon (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/22, G10L15/06
Abstract: provided is an electronic device and method of controlling same, the electronic device including: memory; and at least one processor operatively connected with the memory, wherein the at least one processor is configured to: obtain a voice signal based on a text to speech (tts) model including a plurality of nodes, stored in the memory, wherein the voice signal corresponds to an input text, based on identifying that the voice signal includes an error, identify an error part of the voice signal which includes the identified error, identify an activity of each of the plurality of nodes related to the error part, and modify at least one node among the plurality of nodes based on the identified activity of the at least one node.
Inventor(s): Sooyeon HAN of Suwon-si (KR) for samsung electronics co., ltd., Kihyoung SON of Suwon-si (KR) for samsung electronics co., ltd., Soyoung JUNG of Suwon-si (KR) for samsung electronics co., ltd., Youngah LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/32, G06F3/16, G10L15/08, G10L15/22
Abstract: an electronic apparatus includes: a display; a memory configured to store a plurality of assistance instructions respectively corresponding to a plurality of voice assistants; and at least one processor operatively connected to the display and the memory, wherein the at least one processor is configured to, based on a user voice command, generate response information by using the at least one voice assistant and control the display to display the generated response information, based on a predetermined voice command received during a first voice assistant operation, activate a second voice assistant operation corresponding to the predetermined voice command.
Inventor(s): Jaehue SHIN of Suwon-si (KR) for samsung electronics co., ltd., Yongsung CHO of Suwon-si (KR) for samsung electronics co., ltd., Daeseok BYEON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C7/10, G11C5/14, G11C7/12
Abstract: a memory device includes a memory cell array including a plurality of memory cells, and a page buffer circuit including a plurality of page buffer units respectively connected with the memory cells through a plurality of bit lines. a sensing node is connected to a bit line for each buffer circuit. the plurality of page buffer units are respectively connected with sensing nodes, each of the plurality of page buffer units includes at least one transistor. one or more auxiliary wires in the proximity of the sensing node are used to reduce coupling problems caused by a low capacitance of the sensing node.
20240161810.MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): SEUNG-JUN LEE of Suwon-si (KR) for samsung electronics co., ltd., YOUNGHUN SEO of Suwon-si (KR) for samsung electronics co., ltd., Hoseok Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4091, G11C11/408, G11C11/4097
Abstract: a memory device includes a memory cell array which includes a plurality of word lines and a plurality of bit lines; a plurality of column selection lines which extends over the memory cell array and includes a first part of the memory cell array and a second part connected to the first part; a plurality of bit line sense amplifiers each connected to a bit line and configured to sense data stored in a memory cell; a plurality of local sense amplifiers each configured to output the sensed data from one of the bit line sense amplifiers through a column selection transistor connected to a local column selection line; a control logic circuit which generates a row address signal indicating an activation word line and a column address signal indicating an activation bit line; and a column decoder which activates a column selection line based on the column address signal.
Inventor(s): SEONGJIN KIM of Suwon-si (KR) for samsung electronics co., ltd., SANG-WAN NAM of Suwon-si (KR) for samsung electronics co., ltd., Sungho MOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4099, G11C5/14, G11C11/4074, G11C11/4096
Abstract: a memory device may include a reference voltage generator that generates a reference voltage, a voltage regulator that includes a plurality of driving blocks generating an internal voltage based on the reference voltage, and a power line that receives the internal voltage. at least one of the plurality of driving blocks may include a first unit driver that generates a first output current flowing through the power line based on the reference voltage and a change in the internal voltage, and a second unit driver that generates a second output current larger than the first output current flowing through the power line, based on the reference voltage and the change in the internal voltage. the first unit driver may generate the first output current faster than the second output current of the second unit driver.
Inventor(s): Poornima VENKATASUBRAMANIAN of Bengaluru (IN) for samsung electronics co., ltd., Pushp KHATTER of Bengaluru (IN) for samsung electronics co., ltd., Lava Kumar PULLURU of Bengaluru (IN) for samsung electronics co., ltd., Manish Chandra JOSHI of Bengaluru (IN) for samsung electronics co., ltd., Ved PRAKASH of Bengaluru (IN) for samsung electronics co., ltd., Anurag KUMAR of Bengaluru (IN) for samsung electronics co., ltd., Surendra DESHMUKH of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): G11C11/419, G11C11/412
Abstract: a write assist circuit includes a first power control circuit and second power control circuit, each comprising a first switch and second switch. the first switch of first power control circuit has first drive strength and is configured to be controlled by a column select line, a power control line, a first bit line, and a power supply. the first switch of the second power control circuit has the first drive strength and is configured to be controlled by the column select line, the power control line, a second bit line, and the power supply. the second switch has a second drive strength and is configured to be controlled by the power control line. the first switches are configured to be controlled using input data on first- and second-bit line, respectively, for altering power supply to first inverter and second inverter of sram bitcell.
Inventor(s): Kyungmin LEE of Suwon-si (KR) for samsung electronics co., ltd., Youngkeol KIM of Suwon-si (KR) for samsung electronics co., ltd., Daeshik KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C13/00
Abstract: a memory device including a memory cell including a variable resistance element, a controller configured to generate a control signal based on whether the memory device performs a read operation or a verify read operation, a reference cell including a reference resistance circuit configured to have different resistance values depending on the control signal, and a sense amplifier configured to sense a difference between a read voltage value applied from the memory cell and a reference voltage value applied from the reference resistance circuit may be provided.
Inventor(s): Joonam KIM of Suwon-si (KR) for samsung electronics co., ltd., Sejun PARK of Suwon-si (KR) for samsung electronics co., ltd., Kangin SHIN of Suwon-si (KR) for samsung electronics co., ltd., Changhwan SHIN of Suwon-si (KR) for samsung electronics co., ltd., Hyeji LEE of Suwon-si (KR) for samsung electronics co., ltd., Woojae JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/34, G11C16/10
Abstract: provided is a memory device with improved threshold voltage distribution and an operating method of the memory device. the memory device includes a memory cell array including a plurality of memory cells, a voltage generator configured to generate a program voltage and a verification voltage applied to the plurality of memory cells during a data write operation, and a control logic configured to control multiple program loops to program the memory cells to multiple program states during the data write operation and configured to determine whether programming passes or fails in the multiple program loops, wherein the control logic controls the program loops to verify one or more (n+1)-th memory cells to be programmed to an (n+1)-th program state by using a verify condition for verifying an n-th program state in at least one of the multiple program loops (n is an integer greater than or equal to 1).
Inventor(s): Byeongho Kim of Suwon-si (KR) for samsung electronics co., ltd., Shinhaeng Kang of Suwon-si (KR) for samsung electronics co., ltd., Suk Han Lee of Suwon-si (KR) for samsung electronics co., ltd., Hweesoo Kim of Suwon-si (KR) for samsung electronics co., ltd., Kyomin Sohn of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C29/18, G11C29/12
Abstract: a memory device which includes a plurality of memory chips. each of the plurality of memory chips includes a plurality of memory banks and a logic circuit performing a read operation on data stored in the plurality of memory banks based on a first command and a first address received from a host. when a pim instruction set is stored before the first command and the first address are received, the logic circuit is configured to perform a pim command execution operation. when an error associated with the pim command execution operation occurs, the logic circuit is configured to generate error data and record the error data at the log register through the first channels. the logic circuit is configured to output event data indicating an existence of the error data to the host in a first operation mode. the logic circuit is configured to output the error data to the host in a second operation mode.
Inventor(s): MYEONGJIN OH of SUWON-SI (KR) for samsung electronics co., ltd., KYUNGJIN PARK of SUWON-SI (KR) for samsung electronics co., ltd., YONGSUK CHOI of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G11C29/54, G11C29/50
Abstract: a semiconductor device includes: a memory test circuit that outputs a fourth signal based on a logic level of a second signal corresponding to a first signal output by a host and a logic level of a third signal; a memory device that becomes active or inactive based on a logic level of the fourth signal; and a test logic that outputs the third signal and performs a retention test on the memory device based on the logic level of the second signal.
Inventor(s): Heewon Min of Suwon-si (KR) for samsung electronics co., ltd., Dongyun Yeo of Suwon-si (KR) for samsung electronics co., ltd., Songyun Kang of Suwon-si (KR) for samsung electronics co., ltd., Juho Kim of Suwon-si (KR) for samsung electronics co., ltd., Seungbin Lim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01J37/32
Abstract: a process chamber includes a housing providing a process space where plasma processing is performed, a first opening/closing device in a side wall of the housing, the first opening/closing device including a first frame and at least one opening/closing blade connected to the first frame, and a second opening/closing device on an outside of the side wall of the housing and on a same line as the first opening/closing device, the second opening/closing device including a second frame and an opening/closing door structure connected to the second frame, wherein the first opening/closing device and the second opening/closing device are configured to maintain a vacuum state of the process space.
Inventor(s): Heewon MIN of Suwon-si (KR) for samsung electronics co., ltd., Juho KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongyun YEO of Suwon-si (KR) for samsung electronics co., ltd., Kuihyun YOON of Suwon-si (KR) for samsung electronics co., ltd., Seungbin LIM of Suwon-si (KR) for samsung electronics co., ltd., Songyun KANG of Suwon-si (KR) for samsung electronics co., ltd., Youngrok KWON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01J37/32
Abstract: a substrate supporting device may include a cooling plate including a cooling hole, a thermal-insulation plate on the cooling plate, and a chucking plate placed on the thermal-insulation plate. the chucking plate may include a heater. the thermal-insulation plate may include an adiabatic space, which is recessed from a top surface of the thermal-insulation plate by a depth in a downward direction. the cooling plate may include a connection hole, which vertically extends and is connected to the adiabatic space.
Inventor(s): Bon Hyun GU of Suwon-si (KR) for samsung electronics co., ltd., Soo Yong LEE of Suwon-si (KR) for samsung electronics co., ltd., Bong Cheol KIM of Suwon-si (KR) for samsung electronics co., ltd., Sang Ho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/027, H01L21/56, H01L21/66
Abstract: provided is a method for manufacturing a photomask. the method comprises providing a pre-photomask, the pre-photomask including a first area, a second area configured to perform a first duty correction, and a third area configured to perform a second duty correction; forming a pre-photoresist pattern using the pre-photomask such that the pre-photoresist pattern has a stepped shape having at least three steps in a cross-sectional view of the pre-photoresist pattern; analyzing a profile of the pre-photoresist pattern in the cross-sectional view; and inserting an auxiliary pattern into at least one of the first to third areas, based on a result of the analyzing of the profile of the pre-photoresist pattern.
Inventor(s): Seongkeun Cho of Suwon-si (KR) for samsung electronics co., ltd., Eunhee Jeang of Paju-si (KR) for samsung electronics co., ltd., Jihun Lee of Hwaseong-si (KR) for samsung electronics co., ltd., Gyumin Jeong of Ulsan (KR) for samsung electronics co., ltd., Hyunjae Kang of Gunpo-si (KR) for samsung electronics co., ltd., Taemin Earmme of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, H01L21/311
Abstract: a method of fabricating a semiconductor device is disclosed. the method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.
Inventor(s): Hyunsu Hwang of Suwon-si (KR) for samsung electronics co., ltd., Jumyong Park of Suwon-si (KR) for samsung electronics co., ltd., Solji Song of Suwon-si (KR) for samsung electronics co., ltd., Dongjoon Oh of Suwon-si (KR) for samsung electronics co., ltd., Hyunchul Jung of Suwon-si (KR) for samsung electronics co., ltd., Sanghoo Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/31, H01L21/78, H01L23/00, H01L23/522
Abstract: a semiconductor device may include a substrate, one or more front pads disposed on a front surface of the substrate, and a circuit layer including an insulating layer and at least one interconnection electrically connected to the one or more front pads. in some embodiments, the circuit layer may be disposed between the one or more front pads and the substrate. in some embodiments, a side surface of the circuit layer may include a burr that protrudes a height that is below a level of a front surface of the circuit layer. additionally or alternatively, the burr may form a step portion in the circuit layer.
Inventor(s): Seunghyun CHO of Suwon-si (KR) for samsung electronics co., ltd., Jae-Min JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/373, H01L23/00, H01L23/538, H01L25/11
Abstract: a semiconductor package includes a flexible insulating substrate including a first surface and a second surface opposite to the first surface, a first wiring on the first surface of the flexible insulating substrate, a second wiring on the second surface of the flexible insulating substrate, a plurality of vias coupling the first wiring to the second wiring, a plurality of semiconductor devices on the first surface of the flexible insulating substrate, and a heat dissipation resin layer at least partially covering at least one semiconductor device of the plurality of semiconductor devices.
Inventor(s): Youngdeuk KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/467, H01L23/00, H01L23/498, H01L25/065
Abstract: a semiconductor package includes: a first semiconductor chip; a plurality of second semiconductor chips sequentially stacked on the first semiconductor chip, the plurality of second semiconductor chips including an uppermost semiconductor chip including a central region and a peripheral region at a periphery of the central region; at least one first temperature sensor provided on an upper surface of the uppermost semiconductor chip in the central region; a plurality of second temperature sensors provided on the upper surface in the peripheral region; and a thermal conductive member provided on the uppermost semiconductor chip and covering the at least one first temperature sensor and the plurality of second temperature sensors.
20240162120.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kern RIM of Suwon-si (KR) for samsung electronics co., ltd., Doo Hyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Heon Jong SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jin Young PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L29/06, H01L29/417, H01L29/423, H01L29/775, H01L29/786
Abstract: a semiconductor device is provided. the semiconductor device includes first through third active patterns extending in and spaced apart from each other along a first direction on a first surface of a substrate; a first gate electrode extending in a second direction on the first active pattern; a first active cut between the first and second active patterns, wherein the first active cut extends in the second direction, and the first active cut is spaced apart from the first gate electrode in the first direction; a second active cut between the second and third active patterns, wherein the second active cut extends in the second direction, and the second active cut is spaced apart from the first active cut in the first direction; and a first through via extending vertically through the second active pattern between the first and second active cuts, and into the substrate.
Inventor(s): Sanghyuck Oh of Suwon-si (KR) for samsung electronics co., ltd., Seonghoon Bae of Suwon-si (KR) for samsung electronics co., ltd., Kwangok Jeong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L23/31
Abstract: a semiconductor package according to an example embodiment of the present disclosure comprises: a lower redistribution structure including an insulating layer, a connection pad disposed on an upper surface of the insulating layer, and an upper pad; a semiconductor chip mounted on the lower redistribution structure and connected to the upper pad; a conductive post disposed on the connection pad; at least one dummy post disposed on the lower redistribution structure; and an upper redistribution structure disposed on the semiconductor chip and connected to the conductive post, and a height of the at least one dummy post is smaller than a height of the conductive post.
Inventor(s): Kitae Park of Suwon-si (KR) for samsung electronics co., ltd., Seungmin Baek of Suwon-si (KR) for samsung electronics co., ltd., Joohyung Lee of Suwon-si (KR) for samsung electronics co., ltd., Junghyun Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L21/48
Abstract: a semiconductor package includes a first redistribution wiring layer having first and second surfaces opposite to each other, the first redistribution wiring layer including a plurality of first redistribution wires and a plurality of landing pads electrically connected to the first redistribution wires, the plurality of landing pads exposed from the second surface, a second redistribution wiring layer disposed on the first surface of the first redistribution wiring layer, the second redistribution wiring layer including an insulating layer, a logic semiconductor chip provided in the insulating layer, second redistribution wires electrically connected to the logic semiconductor chip, and third redistribution wires electrically connected to the first redistribution wires, the third redistribution wires extending to penetrate the insulating layer, a third redistribution wiring layer disposed on the second redistribution wiring layer, the third redistribution wiring layer including fourth redistribution wires electrically connected to the third redistribution wires, and a semiconductor substrate disposed on an upper surface of the third redistribution wire layer, the semiconductor substrate including at least one memory semiconductor chip electrically connected to the fourth redistribution wires.
20240162132.FAN-OUT SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kwangsoo KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L25/10
Abstract: provided is a semiconductor package including a semiconductor chip, a connection structure below the semiconductor chip and electrically connected to the semiconductor chip, and an external connection terminal below the connection structure, wherein the connection structure includes a first via array including a plurality of first vias in a first direction, a second via array above the first via array and including a plurality of second vias in the first direction, and a first pad between the first via array and the second via array and on upper surfaces of the plurality of the first vias, wherein the second via array is offset from the first via array in the first direction and does not overlap the first via array in a vertical direction.
20240162133.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): MYUNGSAM KANG of Suwon-si (KR) for samsung electronics co., ltd., YOUNGCHAN KO of Seoul (KR) for samsung electronics co., ltd., JEONGSEOK KIM of Cheonan-si (KR) for samsung electronics co., ltd., KYUNG DON MUN of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L23/31, H01L23/538, H01L25/18
Abstract: disclosed is a semiconductor package comprising a package substrate, an interposer substrate on the package substrate and including a first redistribution substrate, a second redistribution substrate on a bottom surface of the first redistribution substrate, and an interposer molding layer between the first redistribution substrate and the second redistribution substrate, a connection substrate on the interposer substrate and having a connection hole that penetrates the connection substrate, a first semiconductor chip on the interposer substrate and in the connection hole, a second semiconductor chip on the interposer substrate, in the connection hole and horizontally spaced apart from the first semiconductor chip, and a connection semiconductor chip in the interposer molding layer and on the bottom surface of the first redistribution substrate.
Inventor(s): Jingu KIM of Suwon-si (KR) for samsung electronics co., ltd., Yieok KWON of Suwon-si (KR) for samsung electronics co., ltd., Wooyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Gongje LEE of Suwon-si (KR) for samsung electronics co., ltd., Sangkyu LEE of Suwon-si (KR) for samsung electronics co., ltd., Bongju CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L21/48, H01L21/56, H01L23/00, H01L23/31, H01L25/00, H01L25/065
Abstract: a semiconductor package includes a lower redistribution wiring layer; and a first semiconductor device on the lower redistribution wiring layer, the first semiconductor device being connected to the lower redistribution wiring layer via conductive bumps, wherein the lower redistribution wiring layer includes: a first redistribution wire in a first lower insulating layer; an insulating structure layer having an opening that exposes a portion of the first redistribution wire, the insulating structure layer including a first photosensitive insulating layer, a light blocking layer on the first photosensitive insulating layer, and a second photosensitive insulating layer on the light blocking layer; a second redistribution wire in the opening of the insulating structure layer, the second redistribution wire including a redistribution via contacting the first redistribution wire, and a redistribution line stacked on the redistribution via; and bonding pads bonded to the conductive bumps and electrically connected to the second redistribution wire.
Inventor(s): Jong-Su PARK of Suwon-si (KR) for samsung electronics co., ltd., Jaehan LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/544, H10B41/27, H10B41/41, H10B43/27, H10B43/40
Abstract: a semiconductor device includes a first peripheral circuit structure and a cell stack structure disposed on the first peripheral circuit structure and including electrode layers and inter-electrode insulating layers that are alternately and repeatedly stacked, the first peripheral circuit structure includes a first substrate, first peripheral transistors disposed on the first substrate, a first peripheral insulating layer covering the first substrate and the first peripheral transistors, and a first peripheral alignment key on the first peripheral insulating layer, and the first peripheral alignment key overlaps the cell stack structure.
20240162181.SEMICONDUCTOR PACKAGES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sun Jae KIM of Suwon-si (KR) for samsung electronics co., ltd., Sun Kyoung SEO of Suwon-si (KR) for samsung electronics co., ltd., Cha Jea JO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/498, H01L23/544, H01L25/065, H01L25/18, H10B80/00
Abstract: a semiconductor package comprising: a first semiconductor chip extending in each of first and second directions that intersect each other; a second semiconductor chip on the first semiconductor chip in a third direction perpendicular to the first and second directions, wherein the second semiconductor chip includes a first area and a second area that is adjacent to and extends around the first area; and a bump structure and a conductive material layer between the first and second semiconductor chips, wherein the conductive material layer is on the bump structure, wherein the bump structure includes a first bump structure overlapping the first area in the third direction, and a second bump structure overlapping the second area in the third direction, wherein the first and second bump structures are spaced apart from each other, and a thickness of the second bump structure is larger than a thickness of the first bump structure.
20240162184.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sang-Sick Park of Suwon-si (KR) for samsung electronics co., ltd., Un-Byoung Kang of Suwon-si (KR) for samsung electronics co., ltd., Min Soo Kim of Suwon-si (KR) for samsung electronics co., ltd., Seon Gyo Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L25/065, H10B80/00
Abstract: a semiconductor package includes a first structure, a first semiconductor chip on the first structure, a first conductive pad on the first structure between the first structure and the first semiconductor chip, a second conductive pad on a lower surface of the first semiconductor chip and vertically overlapping the first conductive pad, a bump connecting the first conductive pad and the second conductive pad, a first adhesive layer surrounding at least a part of side walls of the bump and side walls of the first conductive pad, and a second adhesive layer surrounding at least a part of the side walls of the bump and side walls of the second conductive pad, the second adhesive layer including a material different from the first adhesive layer, wherein a horizontal width of the first adhesive layer is smaller than a horizontal width of the second adhesive layer.
20240162188.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Chajea JO of Suwon-si (KR) for samsung electronics co., ltd., Dohyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungryong OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/31
Abstract: a semiconductor package includes a substrate; a first chip structure on the substrate and having a first thickness in a first direction; a second chip structure on the substrate adjacent to the first chip structure along a second direction and having a second thickness in the first direction; a third chip structure on the substrate and adjacent to the first chip structure and the second chip structure in a third direction perpendicular to the second direction; and an encapsulant covering the first chip structure, the second chip structure, and the third chip structure, wherein the third chip structure includes a lower chip structure that overlaps a first portion of a space between the first chip structure and the second chip structure in the third direction, and an upper chip structure on the lower chip structure such that a second portion of the space is exposed in the third direction.
Inventor(s): Seongyo KIM of Suwon-si (KR) for samsung electronics co., ltd., UN-BYOUNG KANG of Suwon-si (KR) for samsung electronics co., ltd., SANG-SICK PARK of Suwon-si (KR) for samsung electronics co., ltd., Hanmin LEE of Suwon-si (KR) for samsung electronics co., ltd., Seungyoon JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, B23K26/38, B23K26/40, H01L21/56, H01L23/00, H01L23/31, H01L23/48
Abstract: disclosed are semiconductor packages and their fabrication methods. the semiconductor package comprises a first semiconductor chip, a lower adhesion layer on the first semiconductor chip, a second semiconductor chip on the lower adhesion layer, an upper adhesion layer on the second semiconductor chip, and a third semiconductor chip on the upper adhesion layer. the lower adhesion layer includes a first cutting surface connected to a top surface of the lower adhesion layer. the upper adhesion layer is in contact with the first cutting surface of the lower adhesion layer.
Inventor(s): Jaekyung YOO of Seoul (KR) for samsung electronics co., ltd., Jayeon LEE of Seongnam-si (KR) for samsung electronics co., ltd., Jae-eun LEE of Hwaseong-si (KR) for samsung electronics co., ltd., Yeongkwon KO of Hwaseong-si (KR) for samsung electronics co., ltd., Jin-woo PARK of Seoul (KR) for samsung electronics co., ltd., Teak Hoon LEE of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/13, H01L23/31, H01L23/498, H01L25/00
Abstract: disclosed are semiconductor packages and/or methods of fabricating the same. the semiconductor package comprises a package substrate, a first semiconductor chip mounted on the package substrate, a second semiconductor chip mounted on a top surface of the first semiconductor chip, and a first under-fill layer that fills a space between the package substrate and the first semiconductor chip. the package substrate includes a cavity in the package substrate, and a first vent hole that extends from a top surface of the package substrate and is in fluid communication with the cavity. the first under-fill layer extends along the first vent hole to fill the cavity.
Inventor(s): Yongjin Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/31, H10B80/00
Abstract: a semiconductor package includes a first semiconductor chip including a support structure extending away from a top surface thereof, a second semiconductor chip stacked on the first semiconductor chip, having a horizontal width that is less than that of the first semiconductor chip, and having an edge horizontally spaced apart from that of the first semiconductor chip in a plan view, and an insulating adhesive layer between the first semiconductor chip and the second semiconductor chip that extends away from between the first semiconductor chip and the second semiconductor chip to cover the support structure. in a plan view, the support structure is horizontally spaced apart from the edge of the second semiconductor chip and an edge of the insulating adhesive layer.
Inventor(s): Yechung CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Woonbae KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeongkyu HA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/18, H01L23/552, H10K59/90
Abstract: a display apparatus includes a silicon substrate including a first surface and a second surface opposite thereto and including an opaque material, a display panel disposed on the first surface of the silicon substrate, a base film including a third surface and a fourth surface opposite thereto, the fourth surface having a portion facing the first surface of the silicon substrate, a display driving chip mounted on the base film, a connector disposed on a portion of the third surface of the base film, and a driving printed circuit board (pcb) electrically connected with the base film, wherein the silicon substrate corresponds to the base film in a one-to-one relationship, and a length of an edge of the base film overlapping the silicon substrate is about 90% of a length of an edge of the silicon substrate parallel to the edge of the base film.
Inventor(s): Juseong MIN of Suwon-si (KR) for samsung electronics co., ltd., Jae-Bok Baek of Suwon-si (KR) for samsung electronics co., ltd., Taekkyu Yoon of Suwon-si (KR) for samsung electronics co., ltd., Seungwook Choi of Suwon-si (KR) for samsung electronics co., ltd., Jeehoon Han of Suwon-si (KR) for samsung electronics co., ltd., Taeyoon Hong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/08, H01L21/306, H01L21/308
Abstract: a semiconductor device includes an active pattern having sharp corners. the semiconductor device includes a peripheral circuit including a substrate, a resistor device in the substrate, and an active pattern on the substrate. when viewed in a plan view, the active pattern includes corners in a serpentine shape, and first and second shapes of the corners are different from each other.
20240162226.SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seonah NAM of Yongin-si (KR) for samsung electronics co., ltd., Byungju KANG of Seoul (KR) for samsung electronics co., ltd., Byungsung KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyelim KIM of Asan-si (KR) for samsung electronics co., ltd., Sungho PARK of Suwon-si (KR) for samsung electronics co., ltd., Yubo QIAN of Yongin-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/088, H01L23/538, H01L29/06, H01L29/423
Abstract: a semiconductor device includes first and second external dummy areas, and a circuit area between the first and second external dummy areas. the circuit area includes circuit active regions and circuit gate lines. each external dummy area includes an external dummy active region and external dummy gate lines overlapping the external dummy active region and spaced apart from the circuit gate lines. the external dummy active region has a linear shape extending in a first horizontal direction or a shape including active portions isolated from direct contact with each other and extending sequentially in the first horizontal direction. the circuit active regions are between the first and second external dummy active regions and include a first plurality of circuit active regions extending sequentially in the first horizontal direction and a second plurality of circuit active regions extending sequentially in a second horizontal direction perpendicular to the first horizontal direction.
Inventor(s): Dongkyu LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyungjoo NA of Suwon-si (KR) for samsung electronics co., ltd., Jinchan YUN of Suwon-si (KR) for samsung electronics co., ltd., Cheoljin YUN of Suwon-si (KR) for samsung electronics co., ltd., Kyuman HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/092, H01L21/822, H01L21/8238, H01L29/06, H01L29/417, H01L29/423, H01L29/66, H01L29/775
Abstract: a three-dimensional semiconductor device includes a lower connection structure; a device structure; and an upper connection structure sequentially disposed along a first direction, wherein the device structure includes a substrate on the lower connection structure; first and second source/drain patterns on the substrate; a separation pattern adjacent in a second direction to the source/drain patterns, the second direction being parallel to a bottom surface of the substrate; and a through conductive pattern adjacent in a third direction to the separation pattern, the third direction being parallel to the bottom surface of the substrate and intersecting the second direction, the through conductive pattern connects the lower connection structure and the upper connection structure to each other, and the through conductive pattern is connected either through the lower connection structure to the first source/drain pattern or through the upper connection structure to the second source/drain pattern.
Inventor(s): Kyoungeun Chang of Suwon-si (KR) for samsung electronics co., ltd., Sungin Kim of Suwon-si (KR) for samsung electronics co., ltd., Jameyung Kim of Suwon-si (KR) for samsung electronics co., ltd., Incheol Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, H01L29/10, H01L29/423
Abstract: provided are an image sensor and an electronic system including the same. an image sensor includes a substrate having a pixel region in which an active region is defined, and a gate electrode on the active region, wherein the active region includes an edge portion extending along an outline of a top surface thereof, the edge portion including a local round edge portion having a first radius of curvature that is greater than a second radius of curvature of other portions of the edge portion, wherein the gate electrode includes a lateral gate portion on a portion of the top surface of the active region, a vertical gate portion on a sidewall of the active region, and a round inner corner portion integrally connected to the lateral gate portion and the vertical gate portion, the round inner corner portion facing the local round edge portion.
20240162257.IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yunhyeok KIM of Suwon-si (KR) for samsung electronics co., ltd., Hwanwoong KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyuncheol KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
Abstract: an image sensor including a substrate having a pixel region, a floating diffusion region in the pixel region of the substrate, a plurality of photoelectric conversion regions around the floating diffusion region in the substrate, a plurality of transmission gates adjacent to the plurality of photoelectric conversion regions, respectively, each including a first buried gate extending to the inside of the substrate, a second buried gate apart from the first buried gate and extending to the inside of the substrate, and a gate connection between the first buried gate and the second buried gate, and a plurality of spacers each on at least parts of side walls of each of the plurality of transmission gates, wherein each of the plurality of spacers is between the side walls of each of the plurality of transmission gates and the floating diffusion region in a plan view.
Inventor(s): YOUNGGU JIN of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
Abstract: an image sensor includes a substrate, a vertical gate including a vertical extension vertically extending into the substrate from a top of the substrate, and a horizontal extension extending in parallel with a top surface of the substrate from a top of the vertical extension, a photodiode (pd) disposed under the vertical gate inside the substrate, a spacer disposed between the horizontal extension and the substrate, and a gate insulation layer. a bottom surface and side surfaces of the vertical extension and a bottom surface of the horizontal extension are covered by the gate insulation layer, and the spacer is disposed between the substrate and the gate insulation layer of the horizontal extension.
Inventor(s): KYOOHO JUNG of SUWON-SI (KR) for samsung electronics co., ltd., JINWOOK LEE of SUWON-SI (KR) for samsung electronics co., ltd., JONGYEONG MIN of SUWON-SI (KR) for samsung electronics co., ltd., JIYE BAEK of SUWON-SI (KR) for samsung electronics co., ltd., YESEUL LEE of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H01G4/012, H01G4/08, H10B12/00
Abstract: a capacitor structure includes; a lower electrode, a dielectric pattern on the lower electrode, an interface structure on the dielectric pattern, and an upper electrode on the interface structure. the dielectric pattern includes an oxide of a metal having 4 valence electrons. the interface structure includes a first interface pattern including a first metal oxide doped with nitrogen, and a second interface including a second metal oxide.
20240162281.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Intak JEON of Suwon-si (KR) for samsung electronics co., ltd., Jaesoon LIM of Suwon-si (KR) for samsung electronics co., ltd., Hanjin LIM of Suwon-si (KR) for samsung electronics co., ltd., Hyungsuk JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: a semiconductor device may include a substrate; a plurality of lower electrodes on the substrate; at least one supporter layer in contact with the plurality of lower electrodes; a dielectric layer on the plurality of lower electrodes and the at least one supporter layer; and an upper electrode on the dielectric layer. each of the plurality of lower electrodes may include a first lower electrode and a second lower electrode on the first lower electrode. the at least one supporter layer may include a first supporter layer in contact with a side surface of an upper region of the first lower electrode. a level of an uppermost end of the second lower electrode may be higher than a level of an upper surface of the first supporter layer.
Inventor(s): Jinbum Kim of Seoul (KR) for samsung electronics co., ltd., DAHYE KIM of Seoul (KR) for samsung electronics co., ltd., SEOKHOON KIM of Suwon-si (KR) for samsung electronics co., ltd., JAEMUN KIM of Seoul (KR) for samsung electronics co., ltd., Ilgyou Shin of Seoul (KR) for samsung electronics co., ltd., Haejun YU of Osan-si (KR) for samsung electronics co., ltd., KYUNGIN CHOI of Seoul (KR) for samsung electronics co., ltd., KIHYUN HWANG of Seongnam-si (KR) for samsung electronics co., ltd., SANGMOON LEE of Suwon-si (KR) for samsung electronics co., ltd., SEUNG HUN LEE of Hwaseong-si (KR) for samsung electronics co., ltd., KEUN HWI CHO of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/08, H01L21/8238, H01L27/092, H01L29/165, H01L29/423, H01L29/66, H01L29/78, H01L29/786
Abstract: a semiconductor device includes an active pattern on a substrate, a pair of source/drain patterns on the active pattern, a channel pattern between the pair of source/drain patterns, the channel pattern including semiconductor patterns stacked to be spaced apart from each other, and a gate electrode crossing the channel pattern and extending in a first direction. one of the pair of source/drain patterns includes a first semiconductor layer and a second semiconductor layer thereon. the first semiconductor layer is in contact with a first semiconductor pattern, which is one of the stacked semiconductor patterns. the largest widths of the first semiconductor pattern, the first semiconductor layer, and the second semiconductor layer in the first direction are a first width, a second width, a third width, respectively, and the second width is larger than the first width and smaller than the third width.
20240162307.SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hokyun AN of Seoul (KR) for samsung electronics co., ltd., Bumsoo KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Hyunseung KIM of Bucheon-si (KR) for samsung electronics co., ltd., Guangfan JIAO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/40, H01L21/28, H01L21/3115, H01L21/8238, H01L27/092, H01L29/423, H01L29/49, H01L29/51, H01L29/78
Abstract: a semiconductor device may include a substrate, an interface insulation pattern, a gate insulation pattern, a threshold voltage controlling metal pattern and a conductive pattern. the interface insulation pattern may be formed on the substrate. the gate insulation pattern including an oxide having a dielectric constant higher than that of silicon oxide may be formed on the interface insulation pattern. the threshold voltage controlling metal pattern may be formed on the gate insulation pattern. the conductive pattern may be formed on the threshold voltage controlling metal pattern. first dopants including at least fluorine may be included within and at at least one surface of the gate insulation pattern and at an upper surface of an interface insulation pattern contacting the gate insulation pattern. the semiconductor device may have excellent electrical characteristics.
Inventor(s): Myung YANG of Niskayuna NY (US) for samsung electronics co., ltd., Myunghoon JUNG of Clifton Park NY (US) for samsung electronics co., ltd., Seungmin SONG of Clifton Park NY (US) for samsung electronics co., ltd., Seungchan YUN of Waterford NY (US) for samsung electronics co., ltd., Sejung PARK of Watervliet NY (US) for samsung electronics co., ltd., Kang-ill SEO of Springfield VA (US) for samsung electronics co., ltd.
IPC Code(s): H01L29/417, H01L21/822, H01L21/8238, H01L27/092, H01L29/06, H01L29/423, H01L29/66, H01L29/775
Abstract: provided is a three-dimensional field-effect transistor (3dsfet) device including: a 1source/drain region on a substrate, and a 2source/drain region on the 1source/drain region; and a 1source/drain contact structure on the 1source/drain region, and a 2source/drain contact structure on the 2source/drain region, wherein the 2source/drain region is isolated from the 1source/drain region through an interlayer structure, and wherein a spacer is formed at an upper portion of a sidewall of the 2source/drain contact structure, between the 1source/drain contact structure and the 2source/drain contact structure.
Inventor(s): Darong OH of Suwon-si (KR) for samsung electronics co., ltd., Ho-Jun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeewoong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/417, H01L23/48, H01L29/06, H01L29/423, H01L29/66, H01L29/775, H01L29/786
Abstract: a semiconductor device comprising a substrate including an active pattern, a channel pattern and a source/drain pattern that are on the active pattern, the source/drain pattern connected to the channel pattern, a gate electrode on the channel pattern, an active contact on the source/drain pattern, an upper contact being adjacent to the active contact and extending into the substrate, a lower power interconnection line buried in the substrate, and a power delivery network layer on a bottom surface of the substrate, wherein the lower power interconnection line includes a connection portion connected to the upper contact, and a lower portion of the upper contact protrudes into the connection portion.
Inventor(s): Jongmin Shin of Suwon-si (KR) for samsung electronics co., ltd., Donghoon Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/423, H01L27/092, H01L29/06, H01L29/417, H01L29/775, H01L29/786
Abstract: a semiconductor device may include an active region on a substrate, channel patterns on the active region, and gate electrodes on the channel patterns, respectively, and extending in a first direction. the channel patterns may include a first subset of the channel patterns, each of which has a first width, and a second subset of the channel patterns, each of which has a second width. the first and second subsets may be adjacent to each other in a second direction. the channel patterns may further include a buffer channel pattern between the first subset and the second subset. the buffer channel pattern may include a connection side surface extending in the first direction, and the connection side surface may be configured such that a width of the buffer channel pattern changes from the first width to the second width when moving from the first subset to the second subset.
20240162323.INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Junghoo Shin of Suwon-si (KR) for samsung electronics co., ltd., Sangcheol Na of Suwon-si (KR) for samsung electronics co., ltd., Minjae Kang of Suwon-si (KR) for samsung electronics co., ltd., Yongjin Kwon of Suwon-si (KR) for samsung electronics co., ltd., Soeun Kim of Suwon-si (KR) for samsung electronics co., ltd., Jongmin Baek of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/423, H01L21/8234, H01L27/088, H01L29/06, H01L29/08, H01L29/66, H01L29/775, H01L29/786
Abstract: the integrated circuit device includes a substrate, a first fin extending in a first horizontal direction on the substrate, a second fin and a third fin spaced apart from each other in the first horizontal direction and extending in the first horizontal direction, a second source/drain area on the second fin and the third fin, a back side contact between the second fin and the third fin and electrically connected to the second source/drain area, and a back side conductive layer extending in the first horizontal direction and electrically connected to the back side contact. the back side contact includes a first portion protruding from the substrate and a second portion that is coplanar, in a vertical direction, with the substrate. a width of the second portion in the second horizontal direction is greater than a width of the first portion in the second horizontal direction.
Inventor(s): Van Luan NGUYEN of Suwon-si (KR) for samsung electronics co., ltd., Hyeonjin SHIN of Suwon-si (KR) for samsung electronics co., ltd., Minsu SEOL of Seoul (KR) for samsung electronics co., ltd., Yunseong LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/778, H01L29/417, H01L29/423
Abstract: a semiconductor device including a two-dimensional material is provided. the semiconductor device may include a two-dimensional material layer having semiconductor properties, a self-assembled monolayer in which self-assembled molecules are packed side-by-side, the self-assembled monolayer being arranged on the two-dimensional material layer, and an oxide layer arranged on the self-assembled monolayer.
Inventor(s): Sanghyun JO of Suwon-si (KR) for samsung electronics co., ltd., Jinseong HEO of Suwon-si (KR) for samsung electronics co., ltd., Kihong KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunjae LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/78, H01L29/51, H01L29/66, H10B12/00
Abstract: a field effect transistor includes a source region, a drain region, a channel between the source region and the drain region, a gate insulating layer configured to cover an upper surface of the channel, and a gate electrode configured to cover an upper surface of the gate insulating layer. the gate insulating layer includes a first region where a ferroelectric crystal structure is dominant and a second region where a non-ferroelectric structure is dominant. the gate electrode includes a first pattern region facing the first region of the gate insulating layer and a second pattern region facing the second region of the gate insulating layer.
Inventor(s): Moonil JUNG of Suwon-si (KR) for samsung electronics co., ltd., Sangwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Euntae KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeeeun YANG of Suwon-si (KR) for samsung electronics co., ltd., Kwanghee LEE of Suwon-si (KR) for samsung electronics co., ltd., Youngkwan CHA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/786, H01L29/10, H01L29/66
Abstract: semiconductor devices and manufacturing methods thereof are provided. a semiconductor device includes a substrate, a lower electrode on the substrate, an oxide channel on the lower electrode, the oxide channel including vertical extension portions extending in a first direction perpendicular to the substrate, an upper electrode on the oxide channel, a gate insulator on a portion the oxide channel that is exposed by the lower electrode and the upper electrode, and a gate electrode on the gate insulator, wherein the upper electrode and the lower electrode are separated from each other by the oxide channel in the first direction, and the oxide channel is doped with ions.
Inventor(s): Daehee LEE of Suwon-si (KR) for samsung electronics co., ltd., Sungjun KOH of Suwon-si (KR) for samsung electronics co., ltd., Sanghyun SOHN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L33/50, H01L25/075
Abstract: provided is a display module including a substrate, and a plurality of pixels on the substrate, wherein each of the plurality of pixels includes a first self-luminescence element, a second self-luminescence element, and a third self-luminescence element respectively configured to emit light of a first wavelength band, a first color conversion layer configured to be disposed on the first self-luminescence element, and include a plurality of first quantum dots to absorb the light of the first wavelength emitted from the first self-luminescence element, and emit a light of a second wavelength band and second color conversion layer configured to be disposed on the second self-luminescence element, and comprise a plurality of second quantum dots to absorb the light of the first wavelength emitted from the second self-luminescence element, and emit a light of a third wavelength band, wherein the first color conversion layer and the second color conversion layer include a plurality of foam particles configured to scatter the light emitted from the first self-luminescence element and the light emitted from the second self-luminescence element.
Inventor(s): Joonyong PARK of Suwon-si (KR) for samsung electronics co., ltd., Dongkyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongho KIM of Suwon-si (KR) for samsung electronics co., ltd., Kyungwook HWANG of Suwon-si (KR) for samsung electronics co., ltd., Junsik HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L33/62, H01L25/075, H01L33/38, H01L33/50
Abstract: provided are a multifold micro emitting device, a display apparatus, a method of manufacturing the multifold micro emitting device, and method of manufacturing the display apparatus. the multifold micro light emitting device includes a plurality of sub light emitting devices, a first electrode configured to apply a voltage to each of the plurality of sub light emitting devices, a second electrode configured to apply a common voltage to the plurality of sub light emitting devices, and a separator configured to separate the plurality of sub light emitting devices from each other, and the plurality of sub light emitting devices are configured as a single chip.
Inventor(s): Mincheol HA of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Dongzo KIM of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H02J50/00, H02J7/00, H02J50/12, H02J50/60, H02J50/80
Abstract: a power relay device may be included on/in a cover which covers a portable power reception device, and may comprise: a coil; a power reception circuit configured to rectify a power signal received from a power transmission device through the coil; a wireless communication circuit configured to be driven using the power signal received from the power reception circuit and to communicate with the power transmission device and the power reception device using the coil; and a relay control circuit configured to be driven using the power signal received from the power reception circuit and electrically connected to the power reception circuit and the wireless communication circuit. the relay control circuit may be configured to: receive a first received power value indicating power consumed by the power reception device from the wireless communication circuit; and based on the first received power value being received, transmit a second received power value indicating power consumed by the power relay device to the power transmission device using the wireless communication circuit.
Inventor(s): Dam YUN of Suwon-si (KR) for samsung electronics co., ltd., Haneul KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongwoo BAEK of Suwon-si (KR) for samsung electronics co., ltd., Jehyung YOON of Seoul (KR) for samsung electronics co., ltd., Sangik CHO of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H02M1/00, H02M3/158
Abstract: a voltage converter includes a converting circuit having an inductor connected to a switching node, a first switch element connected between the switching node and a ground voltage, and a second switch element connected between the switching node and an output node; and a switching control circuit configured to adjust a feedback voltage divided from an output voltage of the output node based on a current state of the inductor, and configured to generate switching control signals for charging the inductor with an input voltage and discharging a voltage charged in the inductor, based on a sensing signal based on a current of the inductor and the adjusted feedback voltage.
Inventor(s): Jaejin LEE of Suwon-ai (KR) for samsung electronics co., ltd., Jeonggyu Park of Suwon-si (KR) for samsung electronics co., ltd., Moohyun Park of Suwon-si (KR) for samsung electronics co., ltd., Hyunkyu Chon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H03F3/24, H02M1/00, H02M3/00, H02M3/335, H03F1/32
Abstract: in embodiments, a power supply circuit is provided. the power supply circuit may comprise a plurality of direct current direct current (dcdc) converter circuits and a pulse width modulation (pwm) controller operatively connected to the plurality of dcdc converter circuits. the pwm controller may be configured to obtain a current voltage of a power amplifier. the pwm controller may be configured to obtain a reference voltage for the power amplifier. the pwm controller may be configured to generate pwm control signals for the plurality of dcdc converter circuits based on a difference between the current voltage and the reference voltage. the pwm controller may be configured to provide the pwm control signals to the plurality of dcdc converter circuits. each dcdc converter circuit of the plurality of dcdc converter circuits may comprise a transformer, a primary active clamping circuit connected to a primary end of the transformer, and a secondary resonance converter circuit connected to a secondary end of the transformer. the secondary resonance converter circuit may comprise a diode configured to provide a regeneration current from the secondary end of the transformer to an output end of the secondary resonance converter circuit.
Inventor(s): HYUNCHUL HWANG of SUWON-SI (KR) for samsung electronics co., ltd., JEONGJIN LEE of SUWON-SI (KR) for samsung electronics co., ltd., SEUNGMAN LIM of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H03K3/037, H03K3/012
Abstract: a flip-flop (ff) includes a first n-channel metal oxide semiconductor (nmos) transistor connected to a ground line, a first p-channel metal oxide semiconductor (pmos) transistor connected to a power voltage line, a second nmos transistor connecting a first node to the first nmos transistor, a second pmos transistor connecting the first node to the first pmos transistor, a third nmos transistor and a fourth nmos transistor, connected to the second nmos transistor in parallel, and forming a first discharge path for connecting the first node to the ground line, a third pmos transistor and a fourth pmos transistor, connected to the second pmos transistor in parallel, and forming a first charge path for connecting the first node to the power voltage line, a keeper circuit connected to the first node to maintain a voltage level of the first node.
Inventor(s): Jong Hoon SHIN of San Jose CA (US) for samsung electronics co., ltd., Ardavan PEDRAM of Santa Clara CA (US) for samsung electronics co., ltd., Joseph HASSOUN of Los Gatos CA (US) for samsung electronics co., ltd.
IPC Code(s): H03M7/30
Abstract: a runtime data-format optimizer for a processing element includes a sparsity-detector and a compression-converter. the sparsity-detector selects a first compression-conversion format during a runtime of the processing element based on a performance model that is based on a first sparsity pattern of first data stored in a first memory that is exterior to the processing element and a second sparsity pattern of second data that is to be stored in a second memory within the processing element. the second sparsity pattern is based on a runtime configuration of the processing element. the first data is stored in the first memory using a first compression format and the second data is to be stored in the second memory using a second compression format. the compression-conversion circuit converts the first compression format of the first data to be the second compression format of the second data based on the first compression-conversion format.
Inventor(s): Jong Hoon SHIN of San Jose CA (US) for samsung electronics co., ltd., Ardavan PEDRAM of Santa Clara CA (US) for samsung electronics co., ltd., Joseph HASSOUN of Los Gatos CA (US) for samsung electronics co., ltd.
IPC Code(s): H03M7/30, H03M7/42
Abstract: a runtime bit-plane data-format optimizer for a processing element includes a sparsity-detector and a compression-converter. the sparsity-detector selects a bit-plane compression-conversion format during a runtime of the processing element using a performance model that is based on a first sparsity pattern of first bit-plane data stored in a memory exterior to the processing element and a second sparsity pattern of second bit-plane data that is to be stored in a memory within the processing element. the second sparsity pattern is based on a runtime configuration of the processing element. the first bit-plane data is stored using a first bit-plane compression format and the bit-plane second data is to be stored using a second bit-plane compression format. the compression-conversion circuit converts the first bit-plane compression format of the first data to be the second bit-plane compression format of the second data.
Inventor(s): YOUNG MIN KIM of Suwon-si (KR) for samsung electronics co., ltd., HONGJONG PARK of Suwon-si (KR) for samsung electronics co., ltd., SANGMIN YOO of Suwon-si (KR) for samsung electronics co., ltd., JONGWON YUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B1/40
Abstract: a transceiver includes a phase shifter configured to adjust phase of a receive signal input at a first node of the phase shifter to provide an output receive signal output from a second node of the phase shifter in a receive mode, and to adjust phase of a transmit signal input at the first node to provide an output transmit signal at the second node in a transmit mode.
Inventor(s): Byongok Lee of Suwon-si (KR) for samsung electronics co., ltd., Joohyun Do of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok Yu of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B7/0456, H04L5/00
Abstract: an operating method of a wireless communication user equipment may include transmitting a sounding reference signal (srs) to a base station, receiving, from the base station, a transmit precoding matrix indicator (tpmi) indicating a precoding matrix and a rank indicator (ri) indicating a rank value, selecting a precoding matrix, based on the tpmi and the ri, allocating a gain to each of a plurality of transmission paths, based on the precoding matrix and loss information of each of the plurality of transmission paths, and transmitting a physical uplink shared channel (pusch) through the plurality of transmission paths.
Inventor(s): Wonjun KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Suhwook KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Deokhui LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Juho LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Jungsoo JUNG of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04B7/06, H04W24/02
Abstract: the present disclosure relates to a fifth generation (5g) communication system or a sixth generation (6g) communication system for supporting higher data rates beyond a 4g communication system such as long term evolution (lte). a method performed by a user equipment (ue) in a wireless communication system may include transmitting, to a base station, an artificial intelligence (ai)-based channel state information (csi) feedback mode supported by an ai model of the ue and capability information corresponding to the csi feedback mode, the ai-based csi feedback mode including at least one of an ai-based channel prediction mode or an ai-based csi compression mode, receiving, from the base station, an indicator indicating the csi feedback mode performed by the ue and configuration information corresponding to the csi feedback mode performed by the ue, generating csi, based on the received configuration information and a csi-reference signal (csi-rs), and transmitting the generated csi to the base station.
Inventor(s): Deokhui LEE of Suwon-si (KR) for samsung electronics co., ltd., Dongmyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Wonjun KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangho LEE of Suwon-si (KR) for samsung electronics co., ltd., Juho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B7/06, H04B17/318
Abstract: the present disclosure relates to a 5g communication system or a 6g communication system for supporting higher data rates beyond a 4g communication system such as long term evolution (lte). a method performed by a user equipment (ue) in a 5g or 6g communication system is provided. the method includes receiving a message including configuration information for a conditional channel state information (csi) report from a base station, receiving multiple csi-reference signals (rss) on different beams from the base station, selecting at least one csi-rs satisfying at least one of a first condition or a second condition from the multiple csi-rss, based on the configuration information, and transmitting the conditional csi report including information on the at least one csi-rs to the base station.
Inventor(s): Qi XIONG of Beijing (CN) for samsung electronics co., ltd., Feifei SUN of Beijing (CN) for samsung electronics co., ltd., Sa ZHANG of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04L5/00
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. the application provides a method bs performed by a user equipment in a wireless communication system, comprising: performing a first operation when a transport block over multi-slot physical uplink shared channel tboms pusch overlaps with a first uplink signal; and transmitting tboms pusch signal and/or the first uplink signal.
Inventor(s): Narendranath Durga TANGUDU of Bangalore (IN) for samsung electronics co., ltd., Basavaraj Jayawant PATTAN of Bangalore (IN) for samsung electronics co., ltd., Erik Arthur GUTTMAN of Bangalore (IN) for samsung electronics co., ltd., Nishant GUPTA of Bangalore (IN) for samsung electronics co., ltd., Suresh CHITTURI of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04L67/51, H04L41/0806, H04L41/0895, H04W4/20
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. in an embodiment, a method performed by a ccf, for discovering an api serving a ue is disclosed. the method includes receiving a service api discover request message from an api invoker for determining one or more service apis serving one or more ue. service api discover request message comprises one or more ue ids and a plurality of parameters associated with one or more ue. the method includes retrieving a first service api information associated with one or more ue ids and the plurality of parameters from a memory, transmitting, to api invoker a service api discover response comprising first service api information based on service api discover request message.
Inventor(s): Jaehyun BAE of Suwon-si (KR) for samsung electronics co., ltd., Youngmin MOON of Suwon-si (KR) for samsung electronics co., ltd., Hyunsuk CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04M1/02
Abstract: an electronic device includes: a first housing; a second housing; a hinge structure foldably connecting the first housing and the second housing to each other; and a flexible display including a first portion on the first housing and a second portion on the second housing, the flexible display being foldable according to folding of the first housing and the second housing with respect to each other, wherein the flexible display may include a glass layer, the glass layer may include a flexible part that is bendable and may include a plurality of slits, and at least a portion of a side surface of each of the plurality of slits may include a rough surface.
Inventor(s): Yotam Ater of Tel-Aviv (IL) for samsung electronics co., ltd., Heejin Choi of Tel-Aviv (IL) for samsung electronics co., ltd., Natan Bibelnik of Tel-Aviv (IL) for samsung electronics co., ltd., Woo-shik Kim of Tel-Aviv (IL) for samsung electronics co., ltd., Evgeny Soloveichik of Tel-Aviv (IL) for samsung electronics co., ltd., Ortal Glatt of Tel-Aviv (IL) for samsung electronics co., ltd.
IPC Code(s): H04N9/67, G06N3/04, H04N9/04, H04N9/64
Abstract: systems and methods for image processing, and specifically for color reconstruction of an output signal from a multispectral imaging sensor (mis), are described. embodiments of the present disclosure receive image sensor data from an image sensor of a camera device; apply a non-linear color space mapping to the image sensor data using a neural network to obtain image data, wherein the non-linear color space mapping comprises a non-negative homogeneous function; and store the image data in a memory of the camera device.
Inventor(s): Narae CHOI of Suwon-si (KR) for samsung electronics co., ltd., Bora Jin of Suwon-si (KR) for samsung electronics co., ltd., Yinji Piao of Suwon-si (KR) for samsung electronics co., ltd., Minwoo Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/11, H04N19/119, H04N19/176
Abstract: provided are a video decoding method and a video decoding device, which, during video encoding and decoding processes, obtain most probable mode (mpm) information indicating whether to use mpms of a current block determined based on at least two of a prediction mode of a left neighboring block adjacent to a left side of the current block, a prediction mode of an upper neighboring block adjacent to an upper side of the current block, and a right neighboring block adjacent to a right side of the current block, obtain extended intra mode set information indicating whether to use an extended intra mode set configured based on the mpms, and determine an intra prediction mode of the current block based on the mpm information and the extended intra mode set information.
Inventor(s): Gaeul KIM of Suwon-si (KR) for samsung electronics co., ltd., Seokjae OH of Suwon-si (KR) for samsung electronics co., ltd., Byoungho YUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N21/4788, G06F40/40, H04N21/44
Abstract: an electronic apparatus including: a communication interface; a memory to store meta data corresponding, respectively, to a plurality of contents including a first content and a second content; and at least one processor configured to acquire characteristic information corresponding to the first content and the second content, respectively, based on first content information of the first content and second content information of the second content received through the communication interface, provided the first content information of the first content and the second content information of the second content, do not match each other, and provide a chatting room for the first content and the second content provided the first content and the second content are a same content based on the received first content information and the second content information, the acquired characteristic information, and the meta data stored in the memory.
Inventor(s): Gwangho CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jongah KIM of Suwon-si (KR) for samsung electronics co., ltd., Heewoong YOON of Suwon-si (KR) for samsung electronics co., ltd., Kihyuk LEE of Suwon-si (KR) for samsung electronics co., ltd., Donghan LEE of Suwon-si (KR) for samsung electronics co., ltd., Jeongho CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/61, H04N23/60, H04N23/667, H04N23/90
Abstract: an electronic device according to various embodiments comprises: a distance sensor; a first camera; a second camera having a different angle of view from the first camera; and at least one processor, comprising processing circuitry, wherein at least one processor, individually and/or collectively, may obtain a photographing request, obtain, from the distance sensor, a distance between a subject included in an angle-of-view area of the distance sensor and the distance sensor in response to the photographing request, determine the first camera to be used for photographing on the basis of the distance to the subject, and photograph the subject on the basis of a region of interest (roi) of the distance sensor that is set on the basis of the determined angle of view of the first camera and the distance to the subject.
Inventor(s): Chungyong EOM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/62, H04N23/63, H04N23/661
Abstract: an electronic apparatus includes a camera; a communication interface configured to communicate with an external device; and at least one processor configured to: receive, through the communication interface from the external device, first order information including an order of operations performed by the external device, based on receiving the first order information, obtain a plurality of captured images including the external device through the camera, obtain second order information indicating an order of operations performed by the external device based on the plurality of captured images, and based on the first order information matching the second order information, authenticate the external device.
Inventor(s): Hosuk Han of Suwon-si (KR) for samsung electronics co., ltd., Sookyung Joo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/80, G06F12/02, G06T1/20, G06T1/60
Abstract: an image processing apparatus and an operating method thereof are provided. the image processing apparatus includes: a line interleaving controller configured to generate output data based on line data received from channels respectively connected to image sensors; and an image signal processor configured to process the output data. the line interleaving controller includes: data packing circuits respectively corresponding to the channels and configured to generate packing data by packing the line data to a preset data size; a memory configured to store the packing data in a region indicated by an index assigned to a corresponding channel; a write controller configured to control a write operation of the memory; a line index controller configured to manage indexes respectively corresponding to the channels; a read controller configured to control a read operation of the memory; and an unpacking circuit configured to unpack read data output from the read controller.
Inventor(s): Yohan Roh of Suwon-si (KR) for samsung electronics co., ltd., Jeyeon Kim of Suwon-si (KR) for samsung electronics co., ltd., Yeolmin Seong of Suwon-si (KR) for samsung electronics co., ltd., Yongjoon Song of Suwon-si (KR) for samsung electronics co., ltd., Chanwoo Ahn of Suwon-si (KR) for samsung electronics co., ltd., Jeisung Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/68, H04N25/78
Abstract: an image signal processor, an image sensor, and an operating method of the image sensor are provided. the image sensor may include a pixel array including a plurality of sensing pixels each configured to convert a received light signal into an electrical signal, a readout circuit configured to convert the electrical signals into image data and output the image data, and an image signal processor configured to correct bad pixels occurring in a first pixel group of the image data, based on a neural network, encode position information representing a position of at least one bad pixel of the bad pixels to generate position data, and provide the position data to a first middle layer of a plurality of layers included in the neural network.
Inventor(s): Dong Jae Han of Suwon-si (KR) for samsung electronics co., ltd., Jae Jung Park of Suwon-si (KR) for samsung electronics co., ltd., Bo Keun Lim of Suwon-si (KR) for samsung electronics co., ltd., Gye Hun Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/709, H04N25/772
Abstract: an image sensor and an operating method thereof are provided. the image sensor comprises a voltage generator configured to receive a reference voltage and generate an operating voltage, an analog-to-digital converter (adc) circuit configured to receive the operating voltage and output a digital code based on the operating voltage, and processing circuitry configured to receive the digital code, and calculate a settling time at which the operating voltage was stabilized based on the digital code and a desired settling threshold voltage value.
Inventor(s): Younghyun YOON of Suwon-si (KR) for samsung electronics co., ltd., Haneul JUNG of Suwon-si (KR) for samsung electronics co., ltd., Dongjae HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/767, H04N25/616, H04N25/772
Abstract: a ramp signal generating device and an image sensor for decreasing the latency of a ramp signal are provided. the ramp signal generating device may include a first circuit configured to detect a capacitance of a parasitic capacitor, a second circuit configured to charge the parasitic capacitor with a first voltage, and a third circuit configured to receive the capacitance as an input to generate a load current causing the ramp signal with a predetermined slope.
Inventor(s): Kyeongin Jeong of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W4/90, H04W40/22, H04W48/08, H04W68/00
Abstract: methods and apparatuses for layer 2 (l2) sidelink (sl)-based user equipment (ue)-to-network relay operations in a wireless communication network. a method for operating a first ue includes receiving, from a second ue, a message including assistance information for a relay operation between the first ue and the second ue and receiving, from a base station (bs), a short message. the method further includes acquiring, based on information in the short message, first system information blocks including an earthquake and tsunami warning system/commercial mobile alert service (etws/cmas) notification or second system information blocks for the second ue and transmitting, to the second ue over a sidelink channel, the acquired first system information blocks or the acquired second system information block.
Inventor(s): Ashok Kumar NAYAK of Bangalore (IN) for samsung electronics co., ltd., Rajavelsamy RAJADURAI of Bangalore (IN) for samsung electronics co., ltd., Varini GUPTA of Bangalore (IN) for samsung electronics co., ltd., Hoyeon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W12/06, H04L9/40, H04W12/088
Abstract: a method for performing a network slice specific authentication authorization (nssaa) procedure for a network slice is disclosed. the method includes performing, by a network slice specific authentication and authorization function (nssaaf), an nssaa procedure through a first access and mobility management function (amf) selected amongst the first amf and a second amf. the method includes determining, by the nssaaf whether the ns saa procedure through the first amf is successful or not. the method includes performing by the nssaaf, one of skipping the nssaa procedure for the second amf in response to determining that the nssaa procedure is successful for the first amf transmitting a message to the second amf for deleting network slice selection assistance information (nssai) related to the network slice from an allowed list of network slices in response to determining that the nssaa procedure is unsuccessful for the first amf.
Inventor(s): Jicheol LEE of Suwon-si (KR) for samsung electronics co., ltd., Jungje SON of Suwon-si (KR) for samsung electronics co., ltd., Duckey LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W12/06, H04W12/041, H04W12/0431
Abstract: the present disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by an access and mobility management function (amf) in a wireless communication system according to an embodiment of the present disclosure comprises: receiving, from a relay user equipment (ue) for a ue-network relay communication, a relay key request message including an identifier of a remote ue for the ue-network relay communication; identifying whether the relay ue is authorized to provide a ue-network relay service; identifying an authentication server function (ausf) related to the remote ue, based on the identifier of the remote ue; transmitting, to the ausf, an authentication request message including the identifier of the remote ue; in case that an authentication procedure for the remote ue based on the identifier of the remote ue is successfully performed, acquiring a proximity-based services (prose) session encryption key established between the remote ue and the relay ue; and transmitting, to the relay ue, the prose session encryption key.
Inventor(s): Donggun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W12/108, H04W80/02
Abstract: the present disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. the present disclosure provides a method and device for changing a version of a pdcp layer device without loss. a method for a terminal of the present disclosure may comprise the steps of: receiving an rrc message including bearer configuration information; establishing an nr pdcp entity on the basis of nr pdcp configuration information; and setting an integrity protection function in an nr pdcp entity.
Inventor(s): Hongbo Si of Plano TX (US) for samsung electronics co., ltd., Yingzhe Li of Sunnyvale CA (US) for samsung electronics co., ltd.
IPC Code(s): H04W16/14, H04L5/00, H04W52/14, H04W72/23
Abstract: a method and apparatus of a user equipment (ue) in a wireless communication system is provided. the method and apparatus comprises: receiving a synchronization signals and physical broadcast channel (ss/pbch) block; determining whether a shared spectrum channel access is enabled; determining a first index of the ss/pbch block as a candidate ss/pbch block index (i) based on a number of candidate ss/pbch blocks in a half frame; and determining a second index of the ss/pbch block as an ss/pbch block index (i) based on a quasi-co-location (qcl) parameter (q) indicated by a pbch in the ss/pbch block, wherein the ss/pbch block index (i) is determined as: i=imod q based on a determination that the shared spectrum channel access is enabled, where mod is a modular operation; or i=ibased on the determination that the shared spectrum channel access is not enabled.
Inventor(s): Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd., Seungri JIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W36/00, H04W74/08
Abstract: a method performed by a user equipment (ue) in a wireless communication system is provided. the method includes receiving, from a base station of a serving cell, a radio resource control (rrc) reconfiguration message including a configuration of one or more candidate target cells associated with layer 1 (l1) or layer 2 (l2) triggered mobility (ltm), transmitting, to the base station, a rrc reconfiguration complete message, transmitting, to the base station, a report for a l1 measurement associated with the one or more candidate target cells, and receiving, from the base station, a cell switch command message associated with the ltm, via medium access control-control element (mac-ce) signaling, the cell switch command message including random access information on a target cell.
Inventor(s): Jonas SEDIN of Chertsey (GB) for samsung electronics co., ltd., Milos TESANOVIC of Chertsey (GB) for samsung electronics co., ltd.
IPC Code(s): H04W36/30
Abstract: a method performed by a network control repeater (ncr) is provided. the method comprises determining whether a radio link failure (rlf) between the ncr and a first base station occurred. the method comprises, in case that the rlf between the ncr and the first base station occurred, performing cell selection for radio resource control (rrc) connection procedure. the method comprises, based on the result of the performing cell selection procedure, performing the rrc connection procedure with a selected base station.
Inventor(s): Bilal Sadiq of Plano TX (US) for samsung electronics co., ltd., Boon Loong Ng of Plano TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W48/16
Abstract: a method includes identifying, by a first device, a shared context for a specified discovery process including at least one of a first discovery process for the first device or a second discovery process for a second device. the method also includes determining, by the first device, one or more parameters of the first discovery process for the first device based on the shared context. the method further includes performing or resuming, by the first device, the first discovery process for the first device based on the one or more parameters.
Inventor(s): Rubayet Shafin of Allen TX (US) for samsung electronics co., ltd., Vishnu Vardhan Ratnam of Plano TX (US) for samsung electronics co., ltd., Boon Loong Ng of Plano TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W52/02
Abstract: a wireless communication network includes an access point (ap) multi-link device (mld) and a non-ap mld. a target wake time (twt) scheduling ap affiliated with the ap mld transmits a broadcast frame announcing a broadcast twt schedule to a twt scheduled station (sta) affiliated with the non-ap mld. the broadcast frame indicates whether there is a schedule on other link that is aligned with the twt schedule. when the twt scheduled sta is interested in joining the aligned schedule, it transmits a request to join the aligned schedule on the link.
Inventor(s): Taehyoung KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Heedon GHA of Gyeonggi-do (KR) for samsung electronics co., ltd., Jinkyu KANG of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngbum KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Seunghoon CHOI of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W52/02, H04W72/23
Abstract: the disclosure relates to a communication scheme and system for convergence between an iot technology and a 5g communication system for supporting a higher data transfer rate beyond a 4g system. the disclosure may be applied to intelligent services (e.g. smart home, smart building, smart city, smart car or connected car, health care, digital education, retail business, and security and safety-related services), based on a 5g communication technology and an iot-related technology. in addition, the disclosure provides a method and an apparatus for reducing the power consumption of a terminal in a wireless communication system.
Inventor(s): Deokhui LEE of Suwon-si (KR) for samsung electronics co., ltd., Dongmyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Juho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/044, H04W24/02
Abstract: the present disclosure relates to a 5g communication system or a 6g communication system for supporting higher data rates beyond a 4g communication system such as long term evolution (lte). a method for efficiently selecting an optimal beam based on channel state information (csi) in a 5g or 6g communication system is provided. a method performed by a user equipment (ue) in a wireless communication system is provided. the method includes receiving a message including configuration information for a csi report from a base station, receiving a plurality of csi-reference signals (rss) on different beams from the base station, generating a precoding matrix for the plurality of csi-rss, based on the configuration information, and transmitting the csi report calculated based on the precoding matrix to the base station.
Inventor(s): Emad N. Farag of Flanders NJ (US) for samsung electronics co., ltd.
IPC Code(s): H04W72/20, H04L5/00, H04W72/56
Abstract: a method of operating a user equipment (ue) is provided. the method includes receiving a configuration message to enable inter-ue co-ordination for a sidelink (sl) resource pool, determining a target ue for a sl transmission, and transmitting, to the target ue, a signal to activate or trigger transmission of inter-ue co-ordination information. the method further includes receiving the inter-ue co-ordination information, determining a set of candidate sl resources based on the inter-ue co-ordination information, selecting a sl resource within the determined set, and transmitting a sl channel on the sl resource.
Inventor(s): Juhyuk Im of Suwon-si (KR) for samsung electronics co., ltd., Daeson Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/232, H04L1/00, H04W76/20
Abstract: provided are a user equipment performing a blind decoding operation, and an operating method of the user equipment. an operating method of a user equipment includes receiving a physical downlink control channel (pdcch) including a plurality of control channel elements (cces) corresponding to one control resource set (e.g. a coreset), determining a division value corresponding to a number of cces to be included in at least a first group of n groups of cces based on pdcch configuration-related information, dividing the plurality of cces into the n groups based on the division value, performing cce to resource element (re) demapping on the first group, and decoding the demapped first group.
Inventor(s): Cheolkyu SHIN of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok RYU of Suwon-si (KR) for samsung electronics co., ltd., Sungjin PARK of Suwon-si (KR) for samsung electronics co., ltd., Heedon GHA of Suwon-si (KR) for samsung electronics co., ltd., Youngbum KIM of Suwon-si (KR) for samsung electronics co., ltd., Taehan BAE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/40, H04W72/02, H04W72/25, H04W76/28
Abstract: the disclosure relates to a fifth generation (5g) or sixth generation (6g) communication system for supporting higher data rates. according to an embodiment of the disclosure, an operation method of a first user equipment (ue) for performing sidelink communication in a wireless communication system includes: obtaining discontinuous reception (drx) configuration information; obtaining physical sidelink feedback channel (psfch) resource configuration information; transmitting a physical sidelink shared channel (pssch) to a second ue; transmitting, to the second ue, sidelink control information (sci) including information requesting to transmit a psfch for the pssch; and receiving the psfch for the pssch from the second ue during a drx active time when there is a slot for receiving the psfch in the drx active time.
Inventor(s): Junhyuk SONG of Suwon-si (KR) for samsung electronics co., ltd., Doohyun KO of Suwon-si (KR) for samsung electronics co., ltd., Jeongyeob OAK of Suwon-si (KR) for samsung electronics co., ltd., Chungkeun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/11, H04W8/08, H04W48/16, H04W72/1263, H04W76/27
Abstract: a method and an apparatus for identifying a user in a radio access network (ran), and a first node in the wireless communication system are provided. the method includes identifying a unique identifier of a ue, identifying a radio access network (ran) ue identifier of the ue, and transmitting information related to a mapping relation between the ran ue identifier and the unique identifier of the ue to a second node, based on the unique identifier of the ue.
Inventor(s): Euichang JUNG of Suwon-si (KR) for samsung electronics co., ltd., Hyoungjoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Jinwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Minho YANG of Suwon-si (KR) for samsung electronics co., ltd., Sanggeun LEE of Suwon-si (KR) for samsung electronics co., ltd., Juhyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Chaiman LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/27, H04B17/318, H04W24/10, H04W74/0833
Abstract: an electronic device is provided. the electronic device includes a first communication circuit for first wireless communication, a second communication circuit for second wireless communication, one or more processors, and memory storing one or more programs including instructions that, when executed by the one or more processors, cause the electronic device to identify a state of the electronic device while an operation mode for the first wireless communication is a radio resource control (rrc) idle mode, when the state of the electronic device corresponds to a specified state, measure at least one signal transmitted from a first base station for the second wireless communication, switch the operation mode from the rrc idle mode to an rrc connection mode after measuring the signal, and cause a second station for the first wireless communication to transmit a signal for requesting connection during a state in which the operation mode is in the rrc connection mode.
Inventor(s): Taehyoung KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Jinkyu KANG of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngbum KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Seunghoon CHOI of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W80/08, H04L5/00, H04W24/08, H04W72/0446, H04W72/23
Abstract: disclosed is a method performed by a terminal in a wireless communication system, including receiving, from a base station, at least one parameter for a search space, monitoring, on the search space, downlink control information (dci) related with power saving, the search space being identified based on the at least one parameter, and the dci related with the power saving including a wake up signal indicating whether to monitor a physical downlink control channel (pdcch) and a bandwidth part (bwp) indication related with the wake up signal, and performing a pdcch monitoring based on the wake up signal and the bwp indication included in the dci related with the power saving.
Inventor(s): Bosoon KANG of Suwon-si (KR) for samsung electronics co., ltd., Namsu KIM of Suwon-si (KR) for samsung electronics co., ltd., Dahyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Junho JIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K5/03, H05K5/02
Abstract: a cover for a foldable electronic device is provided. the cover includes a first cover member and a second cover member, wherein the first cover member and the second cover member are spaced a certain interval from each other and are configured to be folded or unfolded with a folding axis interposed therebetween, an inner cover includes a first area coupled to a first inner surface of the first cover member, a second area coupled to a second inner surface of the second cover member, and a third area connecting the first area and the second area and extending across the certain interval, and a ring coupled to the third area of the inner cover.
Inventor(s): Shaofeng DING of Suwon-si (KR) for samsung electronics co., ltd., Jeong Hoon AHN of Seongnam-si (KR) for samsung electronics co., ltd., Yun Ki CHOI of Yongin-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B10/00, H01L21/02, H01L21/8238, H01L27/092, H01L29/06, H01L29/08, H01L29/417, H01L29/423, H01L29/66, H01L29/78, H01L29/786, H10B12/00
Abstract: a semiconductor device includes a substrate including a logic cell region and a connection region, a dummy transistor on the connection region, an intermediate connection layer on the dummy transistor, the intermediate connection layer including a connection pattern electrically connected to the dummy transistor, a first metal layer on the intermediate connection layer, an etch stop layer between the intermediate connection layer and the first metal layer, the etch stop layer covering a top surface of the connection pattern, and a penetration contact extended from the first metal layer toward a bottom surface of the substrate penetrating the connection region.
20240164084.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Do Keun LEE of Suwon-si (KR) for samsung electronics co., ltd., Dong Wook KIM of Suwon-si (KR) for samsung electronics co., ltd., Yang Doo KIM of Suwon-si (KR) for samsung electronics co., ltd., Sang Wuk PARK of Suwon-si (KR) for samsung electronics co., ltd., Min Kyu SUH of Suwon-si (KR) for samsung electronics co., ltd., Geon Yeop LEE of Suwon-si (KR) for samsung electronics co., ltd., Jung Pyo HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: a semiconductor device includes: a substrate includes an active area; a first landing pad connected to the active area and disposed on the substrate; a second landing pad connected to the active area, and spaced apart from the first landing pad, wherein the second landing pad is disposed on the substrate; a first lower electrode disposed on the first landing pad and extending in a direction substantially perpendicular to the substrate; a second lower electrode disposed on the second landing pad and extending in the direction substantially perpendicular to the substrate; a dielectric layer extending along the first lower electrode and the second lower electrode; and an upper electrode disposed on the dielectric layer, wherein a first upper surface of the first landing pad is disposed below a second upper surface of the second landing pad with respect to a lower surface of the substrate.
Inventor(s): Kyooho Jung of Seoul (KR) for samsung electronics co., ltd., Dongkwan Baek of Seoul (KR) for samsung electronics co., ltd., Cheoljin Cho of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: a capacitor may include a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. the dielectric layer structure may include a plurality of dielectric layers and at least one insert layer structure between ones of the plurality of dielectric layers. the insert layer structure may include a plurality of zirconium oxide layers and at least one insert layer. the insert layer may be between ones of the plurality of zirconium oxide layers. the capacitor may have a high capacitance and low leakage currents.
Inventor(s): Choasub Kim of Suwon-si (KR) for samsung electronics co., ltd., Chung Jin Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyungang Kim of Suwon-si (KR) for samsung electronics co., ltd., Soyeon Seok of Suwon-si (KR) for samsung electronics co., ltd., Jungho Lee of Suwon-si (KR) for samsung electronics co., ltd., Yunkyu Jung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B41/27, H01L23/528, H01L25/065, H10B41/10, H10B41/35, H10B43/10, H10B43/27, H10B43/35, H10B80/00
Abstract: disclosed are semiconductor devices, electronic systems including the same, and methods of fabricating the same. the semiconductor device comprises a source structure that includes a support source layer, a gate stack structure on the support source layer, a memory channel structure that penetrates through the gate stack structure and the support source layer, and a separation structure that penetrates through the gate stack structure and the support source layer. the support source layer includes a first source part through which the memory channel structure penetrates, and a second source part through which the separation structure penetrates. a top surface of the first source part is at a level lower than that of a top surface of the second source part.
Inventor(s): Ji-Sung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jung Min PARK of Suwon-si (KR) for samsung electronics co., ltd., Bong Jin KUH of Suwon-si (KR) for samsung electronics co., ltd., Yong Ho HA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B41/27, H01L21/28, H01L25/065, H01L29/51, H10B41/10, H10B41/35, H10B43/10, H10B43/27, H10B43/35, H10B80/00
Abstract: a semiconductor memory device comprises, a substrate, a mold structure including gate electrodes and mold insulating films alternately stacked on the substrate, and a channel structure penetrating the mold structure, wherein the channel structure comprises a semiconductor pattern and a dielectric film on the semiconductor pattern, wherein the dielectric film comprises a first crystalline film in contact with the gate electrodes and a second crystalline film between the first crystalline film and the semiconductor pattern, wherein the first crystalline film includes a first matrix and a first impurity and the second crystalline film includes a second matrix and a second impurity, wherein each of the first matrix and the second matrix comprises at least one of hfo, hfzro(0.5<x<1) and hfzro(0.5<y<1), and wherein each of the first impurity and the second impurity is 10 at % or less of the first crystalline film and second crystalline film, respectively.
Inventor(s): Jiwon Kim of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Woosung Yang of Suwon-si (KR) for samsung electronics co., ltd., Dohyung Kim of Suwon-si (KR) for samsung electronics co., ltd., Sukkang Sung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H01L23/522, H01L23/528, H01L25/065, H10B41/10, H10B41/27, H10B41/35, H10B41/41, H10B43/10, H10B43/35, H10B43/40, H10B80/00
Abstract: disclosed are 3d semiconductor memory devices and electronic systems including the same. the 3d semiconductor memory device comprises a first substrate, a peripheral circuit structure on the first substrate, and a cell array structure on the peripheral circuit structure. the cell array structure includes a second substrate, a stack structure between the second substrate and the peripheral circuit structure and including interlayer dielectric layers and conductive patterns that are stacked alternately with the interlayer dielectric layers, vertical channel structures that include respective portions the stack structure and include vertical semiconductor patterns, respectively, and connection vias that include respective portions the second substrate and are connected to respective top surfaces of the vertical semiconductor patterns.
Inventor(s): Soodoo Chae of Seongnam-si (KR) for samsung electronics co., ltd., Myoungbum Lee of Seoul (KR) for samsung electronics co., ltd., HuiChang Moon of Yongin-si (KR) for samsung electronics co., ltd., Hansoo Kim of Suwon-si (KR) for samsung electronics co., ltd., JinGyun Kim of Yongin-si (KR) for samsung electronics co., ltd., Kihyun Kim of Hwaseong-si (KR) for samsung electronics co., ltd., Siyoung Choi of Seongnam-si (KR) for samsung electronics co., ltd., Hoosung Cho of Yongin-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H01L23/498, H01L23/522, H01L23/535, H01L29/40, H01L29/423, H10B43/10, H10B43/20, H10B43/50
Abstract: a three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. the semiconductor substrate includes a memory cell region and a contact region. the active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. the gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. the supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
Inventor(s): Dong Jin Lee of Suwon-si (KR) for samsung electronics co., ltd., Jun Hee Lim of Suwon-si (KR) for samsung electronics co., ltd., Kang-Oh Yun of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/40, H10B43/10
Abstract: a semiconductor device is provided. the semiconductor device includes an active region, a first source/drain region disposed on the active region, a first contact on the first source/drain region, a second source/drain region spaced apart from the first source/drain region and disposed on the active region, a second contact on the second source/drain region and a first gate electrode disposed on the active region. the first gate electrode includes a first ring portion, which surrounds the first contact, but the second contact extends outside the first ring portion.
Inventor(s): Kyunghwan LEE of Suwon-si (KR) for samsung electronics co., ltd., Yongseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Daewon HA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B51/20, H01L29/51, H01L29/78, H10B51/10
Abstract: a three-dimensional ferroelectric memory device includes a channel on a substrate and extending in a vertical direction substantially perpendicular to an upper surface of the substrate, a gate insulation pattern and a conductive pattern stacked on and surrounding a sidewall of the channel in a horizontal direction substantially parallel to the upper surface of the substrate, a ferroelectric pattern contacting a portion of an outer sidewall of the conductive pattern, a gate electrode contacting the ferroelectric pattern, and first and second source/drain patterns contacting lower and upper surfaces, respectively, of the channel.
Inventor(s): Jinseong HEO of Suwon-si (KR) for samsung electronics co., ltd., Minsu SEOL of Suwon-si (KR) for samsung electronics co., ltd., Yunseong LEE of Suwon-si (KR) for samsung electronics co., ltd., Dongmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Sanghyun JO of Suwon-si (KR) for samsung electronics co., ltd., Dukhyun CHOE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B53/30, H01L21/28, H01L29/04, H01L29/51
Abstract: provided are a semiconductor device including a ferroelectric and an electronic apparatus including the semiconductor device. the semiconductor device includes a semiconductor layer, an electrode apart from the semiconductor layer, and a ferroelectric layer arranged between the semiconductor layer and the electrode. the ferroelectric layer includes a plurality of crystal grains, each of which having a first crystal orientation aligned within an angle range with respect to a first direction and having a second crystal orientation aligned within an angle range with respect to a second direction that is different from the first direction.
20240164116.SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Youngji NOH of Suwon-si (KR) for samsung electronics co., ltd., Jongho WOO of Suwon-si (KR) for samsung electronics co., ltd., Joo-Heon KANG of Suwon-si (KR) for samsung electronics co., ltd., Kyunghoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Myunghun WOO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B63/00
Abstract: a semiconductor device includes a gate stacked structure including gate patterns and insulating patterns that are alternately stacked with each other; a gate insulating layer on a sidewall of the gate stacked structure; a channel layer surrounded by the gate insulating layer; a source line surrounded by the channel layer; a variable resistive layer surrounded by the channel layer; and a drain line surrounded by the channel layer.
Inventor(s): Kwang Hee KIM of Suwon-si (KR) for samsung electronics co., ltd., Yuho WON of Suwon-si (KR) for samsung electronics co., ltd., Jae Yong LEE of Suwon-si (KR) for samsung electronics co., ltd., Oul CHO of Suwon-si (KR) for samsung electronics co., ltd., Ha Il KWON of Suwon-si (KR) for samsung electronics co., ltd., Ju Hyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Won Sik YOON of Suwon-si (KR) for samsung electronics co., ltd., Taehyung KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K50/115, C09K11/02, C09K11/88
Abstract: an electroluminescent device includes a first electrode and a second electrode facing each other; a quantum dot layer disposed between the first electrode and the second electrode and including a plurality of quantum dots; optionally, an electron transport layer between the quantum dot layer and the second electrode; wherein the quantum dot layer is configured to emit first light. the electroluminescent device further includes a first layer including an inorganic nanoparticle between the quantum dot layer and the first electrode, and inorganic nanoparticle includes a metal chalcogenide including a group ii metal and a chalcogen element. the inorganic nanoparticle has a size of greater than or equal to about 0.5 nanometers and less than or equal to about 30 nanometers.
Inventor(s): Hyungjong JEONG of Suwon-si (KR) for samsung electronics co., ltd., Seungpil KO of Suwon-si (KR) for samsung electronics co., ltd., Byoungjae BAE of Suwon-si (KR) for samsung electronics co., ltd., Manjin EOM of Suwon-si (KR) for samsung electronics co., ltd., Gawon LEE of Suwon-si (KR) for samsung electronics co., ltd., Kuhoon CHUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10N50/80, G11C11/16, H10B61/00, H10N50/10
Abstract: a magnetoresistive random access memory device includes a substrate; conductive patterns on the substrate; an insulating interlayer covering the conductive patterns; a lower electrode contact passing through the insulating interlayer, the lower electrode contact contacting the conductive pattern; a lower electrode on the lower electrode contact, the lower electrode including a rounded sidewall; and a memory structure on the lower electrode, the memory structure including a stacked mtj structure and upper electrode, wherein a width of the lower electrode increases from a lower portion to an upper portion, the memory structure has a sidewall slope such that a width of the memory structure increases from an upper portion to a lower portion, and at least a portion of a sidewall of the lower electrode is covered by the first insulating interlayer.
Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
- Samsung Electronics Co., Ltd.
- A01K29/00
- A01K27/00
- B25J11/00
- B25J13/00
- B60L58/13
- G06F3/16
- Samsung electronics co., ltd.
- A44C9/00
- A44C15/00
- A61B5/00
- A61B5/024
- A61B5/24
- A47L9/04
- B05D7/14
- B05D7/00
- C09D7/40
- C09D7/61
- C09D133/08
- C09D167/00
- B23K26/0622
- B23K26/53
- H01L21/67
- B23K26/38
- B23K26/40
- H01L21/304
- H01L21/3065
- H01L21/683
- B24B37/005
- B24B37/20
- B60W30/06
- B60W40/06
- G08G1/14
- C08G61/12
- H10K85/10
- C09D5/00
- C09D133/04
- F25D23/02
- D06F37/26
- D06F23/02
- D06F39/08
- F16L55/027
- F22B1/28
- F24C15/20
- G06T7/30
- G06V10/20
- F24F13/28
- B01D46/00
- B01D46/44
- B01D46/58
- F24F3/167
- F24F11/74
- F25D21/04
- F25D23/06
- F26B21/10
- F26B23/04
- F28D7/10
- G01J1/44
- H10K39/34
- G01N21/25
- G01N21/31
- G01R31/317
- G01R31/3183
- G02B27/01
- G02B27/00
- G02B27/12
- G02B5/04
- G02F1/29
- G03B21/20
- H04N9/31
- G03F7/00
- H01L21/027
- G04G21/00
- G01P3/44
- G04G17/04
- G04G99/00
- G06F3/01
- G06F3/023
- G06F3/0482
- G06F1/16
- G06F3/0486
- G06F3/0488
- G06F3/14
- G06F16/24
- G06F3/0484
- G06F9/451
- G06F3/06
- G09G3/32
- G10L15/01
- G10L15/06
- G10L15/30
- G06F8/65
- G06F8/71
- H04L67/303
- G06F9/455
- G06F9/50
- G06F9/54
- G06F11/07
- G06F11/14
- G06F11/30
- G06F12/10
- G06F17/16
- G06F16/22
- G06F21/55
- G06F21/79
- G06F21/60
- G06F21/64
- G06F30/398
- G03F1/36
- G06F40/205
- G06F16/2457
- G06F40/44
- G06F40/47
- G06F40/51
- G06F40/58
- G06F40/253
- G06N3/04
- G06N20/00
- G06T3/40
- G06T7/13
- H04N7/01
- G06V10/82
- G06T3/00
- G06T5/00
- G06T5/50
- G06T7/20
- G06T7/246
- G06V10/75
- G06V10/77
- G06V10/80
- G06V40/16
- G06T9/00
- A47J36/32
- G01J5/08
- G06T7/73
- G06V10/143
- G06V10/74
- G06V20/52
- B25J9/16
- G06T7/60
- G06T7/55
- G06T7/68
- G06V10/764
- G06V10/774
- G06T7/70
- G06T17/00
- G06V20/40
- G06T19/00
- G06V10/762
- G06V10/25
- G01S17/86
- G01S17/89
- G06V10/44
- G06V10/771
- G06V10/70
- G06V30/148
- G06F40/166
- H04N21/25
- G06V40/50
- G06F21/32
- G06F21/44
- G06V10/98
- G06V40/12
- G06V40/13
- G10L15/00
- G10L13/04
- G10L15/18
- G10L15/183
- G10L15/22
- G10L15/04
- G10L15/32
- G10L15/08
- G11C7/10
- G11C5/14
- G11C7/12
- G11C11/4091
- G11C11/408
- G11C11/4097
- G11C11/4099
- G11C11/4074
- G11C11/4096
- G11C11/419
- G11C11/412
- G11C13/00
- G11C16/34
- G11C16/10
- G11C29/18
- G11C29/12
- G11C29/54
- G11C29/50
- H01J37/32
- H01L21/56
- H01L21/66
- H01L21/311
- H01L23/31
- H01L21/78
- H01L23/00
- H01L23/522
- H01L23/373
- H01L23/538
- H01L25/11
- H01L23/467
- H01L23/498
- H01L25/065
- H01L23/48
- H01L29/06
- H01L29/417
- H01L29/423
- H01L29/775
- H01L29/786
- H01L21/48
- H01L25/10
- H01L25/18
- H01L25/00
- H01L23/544
- H10B41/27
- H10B41/41
- H10B43/27
- H10B43/40
- H10B80/00
- H01L23/13
- H01L23/552
- H10K59/90
- H01L27/08
- H01L21/306
- H01L21/308
- H01L27/088
- H01L27/092
- H01L21/822
- H01L21/8238
- H01L29/66
- H01L27/146
- H01L29/10
- H01G4/012
- H01G4/08
- H10B12/00
- H01L29/08
- H01L29/165
- H01L29/78
- H01L29/40
- H01L21/28
- H01L21/3115
- H01L29/49
- H01L29/51
- H01L21/8234
- H01L29/778
- H01L33/50
- H01L25/075
- H01L33/62
- H01L33/38
- H02J50/00
- H02J7/00
- H02J50/12
- H02J50/60
- H02J50/80
- H02M1/00
- H02M3/158
- H03F3/24
- H02M3/00
- H02M3/335
- H03F1/32
- H03K3/037
- H03K3/012
- H03M7/30
- H03M7/42
- H04B1/40
- H04B7/0456
- H04L5/00
- H04B7/06
- H04W24/02
- H04B17/318
- H04L67/51
- H04L41/0806
- H04L41/0895
- H04W4/20
- H04M1/02
- H04N9/67
- H04N9/04
- H04N9/64
- H04N19/11
- H04N19/119
- H04N19/176
- H04N21/4788
- G06F40/40
- H04N21/44
- H04N23/61
- H04N23/60
- H04N23/667
- H04N23/90
- H04N23/62
- H04N23/63
- H04N23/661
- H04N23/80
- G06F12/02
- G06T1/20
- G06T1/60
- H04N25/68
- H04N25/78
- H04N25/709
- H04N25/772
- H04N25/767
- H04N25/616
- H04W4/90
- H04W40/22
- H04W48/08
- H04W68/00
- H04W12/06
- H04L9/40
- H04W12/088
- H04W12/041
- H04W12/0431
- H04W12/108
- H04W80/02
- H04W16/14
- H04W52/14
- H04W72/23
- H04W36/00
- H04W74/08
- H04W36/30
- H04W48/16
- H04W52/02
- H04W72/044
- H04W72/20
- H04W72/56
- H04W72/232
- H04L1/00
- H04W76/20
- H04W72/40
- H04W72/02
- H04W72/25
- H04W76/28
- H04W76/11
- H04W8/08
- H04W72/1263
- H04W76/27
- H04W24/10
- H04W74/0833
- H04W80/08
- H04W24/08
- H04W72/0446
- H05K5/03
- H05K5/02
- H10B10/00
- H01L21/02
- H01L23/528
- H10B41/10
- H10B41/35
- H10B43/10
- H10B43/35
- H01L23/535
- H10B43/20
- H10B43/50
- H10B51/20
- H10B51/10
- H10B53/30
- H01L29/04
- H10B63/00
- H10K50/115
- C09K11/02
- C09K11/88
- H10N50/80
- G11C11/16
- H10B61/00
- H10N50/10
