Samsung Electronics Co., Ltd. patent applications on July 18th, 2024
Patent Applications by Samsung Electronics Co., Ltd. on July 18th, 2024
Samsung Electronics Co., Ltd.: 168 patent applications
Samsung Electronics Co., Ltd. has applied for patents in the areas of H01L23/00 (11), H01L27/146 (9), H10B12/00 (8), H01L23/498 (7), H04L5/00 (6) H01L27/14627 (3), G06F3/0619 (2), H01L23/49838 (2), G11C16/102 (2), H04W24/10 (2)
With keywords such as: layer, device, including, substrate, configured, information, semiconductor, based, data, and structure in patent application abstracts.
Patent Applications by Samsung Electronics Co., Ltd.
Inventor(s): Sungkoo CHO of Suwon-si (KR) for samsung electronics co., ltd., Yunwon MOON of Suwon-si (KR) for samsung electronics co., ltd., Mukyong KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyosuk KIM of Suwon-si (KR) for samsung electronics co., ltd., Hohyun RYU of Suwon-si (KR) for samsung electronics co., ltd., Sangjin JEONG of Suwon-si (KR) for samsung electronics co., ltd., Kyungah CHANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A23B4/056, A23B4/052, F24C7/02
CPC Code(s): A23B4/056
Abstract: a cooking appliance includes a cooking chamber having a cooking space in which an object to be cooked is placeable, a heating member configured to heat the object based on the object being placed in the cooking chamber, and a smoking module configured to smoke the object placed in the cooking chamber, wherein the smoking module includes: a capsule placement unit in which a capsule containing smoking chips is insertable and placeable therein; a smoke generation unit configured to penetrate one end of the capsule based on the capsule being paced in the capsule placement unit and heat the smoking chips inside the capsule such that smoke is generated from the smoking chips; and a smoke transfer unit configured to transfer the smoke generated from the smoking chips to the cooking chamber.
20240237866. ROBOT CLEANER_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hongseok CHOI of Suwon-si (KR) for samsung electronics co., ltd., Elijah KIM of Suwon-si (KR) for samsung electronics co., ltd., Juyeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jiwon RYU of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A47L11/282, A47L13/16
CPC Code(s): A47L11/282
Abstract: a robot cleaner includes a housing; a motor in the housing; a separation driver including a stopper configured to vertically move up and down; and a cleaning cloth module including a first member including a stopper insertion hole into which the stopper is insertable, and an attaching member to which a cleaning cloth is detachably couplable, and a second member configured to be rotated by the motor, and positioned between the first member and the cleaning cloth to be coupled and separably coupled with the first member.
Inventor(s): Younggwon KOO of Suwon-si (KR) for samsung electronics co., ltd., Kuemjong BAE of Suwon-si (KR) for samsung electronics co., ltd., Jihyeon YUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A61H3/00, A61H1/02
CPC Code(s): A61H3/00
Abstract: a motion assistance apparatus may include a link having a fastening notification function. the motion assistance apparatus may include a waist frame and a waist belt worn around a waist of a user, a force transmission frame and a thigh belt worn around a thigh of the user, an actuator connected to the waist frame and configured to generate power, an upper frame connected to the actuator, a lower frame connected to the upper frame and configured to transmit the generated power to the force transmission frame, the link connecting the upper frame to the lower frame.
Inventor(s): Kilsoo CHOI of Suwon-si (KR) for samsung electronics co., ltd., Kwansik YANG of Suwon-si (KR) for samsung electronics co., ltd., Sehyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeeun PARK of Suwon-si (KR) for samsung electronics co., ltd., Jongin LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A63F13/32, A63F13/497, H04N21/422, H04N21/431, H04N21/478
CPC Code(s): A63F13/32
Abstract: a display device according to an embodiment includes: a display, a communication interface comprising communication circuitry configured to communicate with at least one of a first control device including a first key and a second control device including the first key, and at least one processor, individually and/or collectively, configured to execute at least one instruction to cause the display device to: receive a first control signal corresponding to the first key, perform a first operation to output a first full screen by executing the first control signal based on the first control signal being received from the first control device while first content is being played, and perform a second operation different from the first operation to output a second full screen different from the first full screen based on the first control signal being received from the second control device while the first content is being played.
Inventor(s): Euysung CHU of Suwon-si (KR) for samsung electronics co., ltd., Taeyong LEE of Suwon-si (KR) for samsung electronics co., ltd., Youngseok LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B01D46/46, A61L9/20, B01D46/00, B01D46/44, F24F8/10, F24F8/22, F24F8/80, F24F110/65
CPC Code(s): B01D46/46
Abstract: an air cleaning device including a cleaning unit including a first housing including a first inlet and first outlet, and a first passage from the first inlet to the first outlet, a first fan to generate an air flow through the first passage, and a dust collection filter in the first passage to collect dust from the air flow moving through the first passage; and a sterilizing unit including a second housing including a second inlet connected to the first outlet, a second outlet, and a second passage extending from the second inlet to the second outlet, a second fan to generate an air flow through the second passage, and an ultraviolet light source to irradiate ultraviolet rays to the air flow moving through the second passage. the air cleaning device is operable in a simultaneous mode, two different individual modes, and a standby mode.
20240238849. WAFER CLEANING APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jieun SEO of Suwon-si (KR) for samsung electronics co., ltd., Donghoon KWON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B08B3/02, B05B1/02
CPC Code(s): B08B3/024
Abstract: a wafer cleaning apparatus including a rotating plate configured to support a wafer thereon, and a cleaning unit above the rotating plate and configured to spray cleaning water, wherein the cleaning unit includes a body, a nozzle in the body, at least one supply pipe connected to the nozzle and configured to supply a cleaning substance, and a discharge member at a lower end portion of the nozzle and configured to discharge the cleaning water, which includes the cleaning substance, wherein the discharge member has a spraying port configured spray the cleaning water therethrough, and wherein the spraying port has an x shape may be provided.
Inventor(s): Gihwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Donghoon Kwon of Suwon-si (KR) for samsung electronics co., ltd., Kihoon Jang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B24B37/015
CPC Code(s): B24B37/015
Abstract: a chemical mechanical polishing apparatus, may include: a turntable; a cmp pad installed on an upper surface of the turntable; a polishing head disposed above the turntable and contacting a wafer with the cmp pad to press the wafer; a slurry supply unit supplying slurry to the cmp pad; and a temperature control unit disposed between the slurry supply unit and the polishing head, wherein the temperature control unit may be provided with a body disposed above the cmp pad; and heating members disposed on a bottom surface of the body to heat the cmp pad, wherein the body may be provided with a suction port disposed between the heating members to suction steam.
Inventor(s): Wonkeun CHO of Suwon-si (KR) for samsung electronics co., ltd., Donghoon Kwon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B24B37/10, B24B49/14, B24B53/017, B24B57/02, H01L21/67
CPC Code(s): B24B37/107
Abstract: provided is a chemical mechanical polishing apparatus including a head part configured to support a wafer, a buffer part on the head part and configured to support a center of the wafer, and a first polishing part that is spaced apart from the buffer part and configured to be on an edge of the wafer.
20240238939. SUBSTRATE POLISHING APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jihyeon Kim of Suwon-si (KR) for samsung electronics co., ltd., Donghoon Kwon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B24B57/02, B08B3/02, B24B37/015
CPC Code(s): B24B57/02
Abstract: a substrate polishing apparatus includes a platen having an upper surface configured to polish a semiconductor substrate, a slurry supply configured to supply slurry between the semiconductor substrate and the platen, a substrate holder configured to hold the semiconductor substrate and to bring the semiconductor substrate in contact with the upper surface of the platen, the substrate holder having a circular shape, a temperature controller configured to control temperature of the platen through thermal transfer via direct contact, wherein the temperature controller has a thermal conductive body that has an arc shape and the thermal conductive body is spaced apart from the substrate holder and surrounds at least a portion of the substrate holder, and a cleaning component configured to supply a cleaning solution to the substrate holder and the temperature controller.
Inventor(s): Sunghyun HAN of Suwon-si (KR) for samsung electronics co., ltd., Haengdeog Koh of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun Kwak of Suwon-si (KR) for samsung electronics co., ltd., Kyungoh Kim of Hwaseong-si (KR) for samsung electronics co., ltd., Mijeong Kim of Suwon-si (KR) for samsung electronics co., ltd., Jaejun Lee of Suwon-si (KR) for samsung electronics co., ltd., Hasup Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun IM of Suwon-si (KR) for samsung electronics co., ltd., Sukkoo Hong of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): C07F7/22, G03F7/004, G03F7/20
CPC Code(s): C07F7/2224
Abstract: provided are an organometallic compound represented by one of formulas 1-1 to 1-4 below.
Inventor(s): Sunghyun HAN of Suwon-si (KR) for samsung electronics co., ltd., Haengdeog Koh of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun Kwak of Suwon-si (KR) for samsung electronics co., ltd., Kyungoh Kim of Hwaseong-si (KR) for samsung electronics co., ltd., Mijeong Kim of Suwon-si (KR) for samsung electronics co., ltd., Jaejun Lee of Suwon-si (KR) for samsung electronics co., ltd., Hasup Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun IM of Suwon-si (KR) for samsung electronics co., ltd., Sukkoo Hong of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): C07F7/22, G03F7/004, G03F7/20
CPC Code(s): C07F7/2224
Abstract:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd., Sunghun Hong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C07F15/00, H10K50/11, H10K50/15, H10K50/16, H10K85/30
CPC Code(s): C07F15/0033
Abstract: an organometallic compound represented by formula 1:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd., Sunghun Hong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C07F15/00, H10K50/11, H10K50/15, H10K50/16, H10K85/30
CPC Code(s): C07F15/0033
Abstract:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd., Sunghun Hong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C07F15/00, H10K50/11, H10K50/15, H10K50/16, H10K85/30
CPC Code(s): C07F15/0033
Abstract:
Inventor(s): Takeshi YAMAGISHI of Yokohama-shi (JP) for samsung electronics co., ltd.
IPC Code(s): D06F95/00, A47G25/40, D06F58/10, D06F59/02, D06F89/02
CPC Code(s): D06F95/00
Abstract: a robotic device includes: an insertion unit configured to insert a deflated airbag into an inside of clothing; an expansion unit configured to inflate the clothing by inserting gas into the airbag to expand the airbag; a deflation unit configured to deflate the airbag by taking out the gas from the airbag; and an extraction unit configured to extract the deflated airbag from the inside of the clothing.
Inventor(s): Seungcheon YU of Suwon-si (KR) for samsung electronics co., ltd., Youngjin KIM of Suwon-si (KR) for samsung electronics co., ltd., Beomseok SEO of Suwon-si (KR) for samsung electronics co., ltd., Sungjin IN of Suwon-si (KR) for samsung electronics co., ltd., Youngjun CHOI of Suwon-si (KR) for samsung electronics co., ltd., Dongsu HA of Suwon-si (KR) for samsung electronics co., ltd., Daechul HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F25B49/02, F25B40/02, F25B41/31
CPC Code(s): F25B49/02
Abstract: an air conditioner may include: a compressor; a flow path switching valve; a first flow path connecting an outlet of the compressor to the flow path switching valve; a first heat exchanger; a second flow path connecting the first heat exchanger to the flow path switching valve; a first refrigerant port fluidly connected to an indoor unit; a third flow path extending from the first heat exchanger to the first refrigerant port; a sub-cooler provided on the third flow path; a first expansion valve provided between the first heat exchanger and the sub-cooler on the third flow path; a second expansion valve provided between the sub-cooler and the first refrigerant port on the third flow path; a fourth flow path branched from a branch point of the third flow path, passing through the sub-cooler, and extending to an inlet of the compressor; a third expansion valve provided between the sub-cooler and the branch point on the fourth flow path; a second refrigerant port fluidly connected to the indoor unit; a fifth flow path connecting the second refrigerant port to the flow path switching valve; and a sixth flow path connecting the flow path switching valve to an intake port of the compressor.
20240240850. REFRIGERATOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Inyong HWANG of Suwon-si (KR) for samsung electronics co., ltd., Sungjun CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F25D23/12, F25D23/02
CPC Code(s): F25D23/126
Abstract: a refrigerator including a main body forming a storage room; a door to open and close the storage room; a hinge supporting the door so that the door is rotatable with respect to the main body between an open position and a closed position; a supply line including a water supply hose, wherein the supply line has one end connected to the main body and another end connected to the door, and a first portion of the supply line is movable when the door is rotated; a guide cover on an upper surface of the main body and forming an accommodating space in which the first portion of the supply line is movably accommodated; and a fixing cover on the upper surface of the main body and fixing a second portion of the supply line so that the second portion is maintained in a fixed position.
20240240851. REFRIGERATOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Juno KWON of Suwon-si (KR) for samsung electronics co., ltd., Sangmin PARK of Suwon-si (KR) for samsung electronics co., ltd., Jin JEONG of Suwon-si (KR) for samsung electronics co., ltd., Yonghan KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F25D23/12, F25D23/04
CPC Code(s): F25D23/126
Abstract: a refrigerator including a main body having a storage compartment, a door rotatably provided on the main body to open and close the storage compartment, and an automatic water supply device. the automatic water supply device includes a water supply case, a bucket detachably mounted on the water supply case, and a water level sensor provided to detect a water level in the bucket, and is configured to supply water to the bucket depending on the water level in the bucket. the door includes a dyke protruding from a rear surface of the door to form an accommodation space in which the water supply case is accommodated, and the water supply case is coupled to the dyke.
Inventor(s): Jaemyeon LEE of Suwon-si (KR) for samsung electronics co., ltd., Myungkil KANG of Suwon-si (KR) for samsung electronics co., ltd., Kookyeon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01C21/36, G06V20/10
CPC Code(s): G01C21/3602
Abstract: at least one processor, comprising processing circuitry of an electronic device according to an embodiment may be individually and/or collectively configured to: identify, from among a plurality of indexes for recognizing a plurality of external objects, at least one index for recognizing at least one external object among the plurality of external objects; display based on identifying that the at least one index satisfies a designated condition, a visual affordance for guiding the acquisition of an image including at least one visual object corresponding to at least a portion of the at least one external object; and adjust the location of the electronic device from a first location to a second location.
Inventor(s): Seungchul Lee of Suwon si (KR) for samsung electronics co., ltd., Younghoon Sohn of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01N23/223, G01N23/207, H01L21/66
CPC Code(s): G01N23/223
Abstract: an apparatus for measuring a thickness of a metal layer includes a light source unit configured to generate x-rays, a detection unit configured to detect the x-rays diffracted from a specimen, and a processor configured to measure the thickness of the metal layer of the specimen using an intensity of the x-rays diffracted from the specimen.
Inventor(s): Taeseop LEE of Suwon-si (KR) for samsung electronics co., ltd., Beomsik BAE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01S5/00, G01S5/02, H04W64/00
CPC Code(s): G01S5/01
Abstract: the disclosure provides a method by which a location management function (lmf) and a user equipment (ue) exchange a long-term evolution (lte) positioning protocol (lpp) message related to location estimation. in particular, the method may include performing, by the lmf, a procedure for exchanging ue capability information related to location estimation with the ue, transmitting assistance information for signal measurement by the ue, and requesting and obtaining a measurement result from the ue.
Inventor(s): Dongsik SHIM of Suwon-si (KR) for samsung electronics co., ltd., Eunkyung Lee of Suwon-si (KR) for samsung electronics co., ltd., Bongyong Jang of Suwon-si (KR) for samsung electronics co., ltd., Chnaggyun Shin of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02B6/293
CPC Code(s): G02B6/29301
Abstract: an optical element array and a method of manufacturing the optical element array are provided. the optical element array includes a substrate, an optical passive element layer provided on the substrate and including at least one waveguide, and at least one optical active element provided on the optical passive element layer. an input and output region of the at least one optical active element includes a tapered region.
Inventor(s): Sung Hwan PARK of Suwon-si (KR) for samsung electronics co., ltd., Hyun-Ji Song of Suwon-si (KR) for samsung electronics co., ltd., Juhyeon Park of Suwon-si (KR) for samsung electronics co., ltd., Sungmin Ko of Suwon-si (KR) for samsung electronics co., ltd., Sounghyun Jun of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/004, G03F7/039
CPC Code(s): G03F7/0045
Abstract: a photoresist composition that includes a photosensitive polymer that can be cut by a chain scission mechanism due to light, a radical quencher including a phenol-based compound, and a photoactive compound (pac) are provided.
Inventor(s): Daehee LEE of Suwon-si (KR) for samsung electronics co., ltd., Sangwon PARK of Suwon-si (KR) for samsung electronics co., ltd., Kyeonga KIM of Suwon-si (KR) for samsung electronics co., ltd., Jieun PARK of Suwon-si (KR) for samsung electronics co., ltd., Byeong-Hwan SON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/00, G03F1/42, G03F1/44, H01L21/266
CPC Code(s): G03F7/70633
Abstract: a method of measuring overlay, including forming an active region on a cell region of a substrate and forming at least one overlay key structure on a scribe lane region of the substrate, forming a first mask pattern on the active region and forming a first sub-pattern on the overlay key structure, checking an alignment using the first sub-pattern, performing a first ion implantation process into the substrate, forming a second mask pattern on the active region and forming a second sub-pattern on the overlay key structure, checking the alignment using the second sub-pattern, and performing a second ion implantation process into the substrate, wherein a second width of the second sub-pattern is greater than a first width of the first sub-pattern.
Inventor(s): Ho-Suk Yum of Yongin-si (KR) for samsung electronics co., ltd., Heechang Cho of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G05B19/042, G06F1/20
CPC Code(s): G05B19/042
Abstract: an electronic device, which includes a host, and a storage device receiving a command from the host. the storage device processes the received command and returns, to the host, a command response indicating a result of processing the received command, and the command response includes information about an internal temperature of the storage device.
Inventor(s): Chonghoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Yeonkyu PARK of Suwon-si (KR) for samsung electronics co., ltd., Jinyong PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G05B23/02
CPC Code(s): G05B23/0297
Abstract: various embodiments of the present disclosure disclose a method and apparatus, and comprise: a communication module comprising communication circuitry; a memory; and at least one processor comprising processing circuitry operatively connected to the communication module and/or the memory, wherein at least one processor is configured to: generate an ai predictive model based on component input data; acquire fail result data according to the ai predictive model;
Inventor(s): Chonghoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Yeonkyu PARK of Suwon-si (KR) for samsung electronics co., ltd., Jinyong PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G05B23/02
CPC Code(s): G05B23/0297
Abstract: acquire pass result data according to the fail result data; and update the ai predictive model based on at least one of the component input data, the fail result data, and the pass result data.
Inventor(s): Dongwoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Boseok MOON of Suwon-si (KR) for samsung electronics co., ltd., Youngdae KO of Suwon-si (KR) for samsung electronics co., ltd., Junggap KUK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G05D13/02, B62K11/00
CPC Code(s): G05D13/02
Abstract: an electronic device includes a driving part including a first driving wheel and a second driving wheel; a memory storing at least one instruction; and at least one processor operatively coupled with the driving part and the memory, wherein the at least one processor is configured to execute the at least one instruction to: based on detecting an occurrence of an event for stopping the robot while the first driving wheel rotates at a first speed and the second driving wheel rotates at a second speed, control the driving part to stop the robot based on the first speed and the second speed, and wherein the at least one processor may be further configured to execute the at least one instruction to control the driving part to stop the robot by: based on a relation between the first speed and the second speed satisfying a first condition, controlling the driving part such that a proceeding axis of the first driving wheel rotates in a first direction and a proceeding axis of the second driving wheel rotates in a second direction opposite to the first direction, and based on the relation between the first speed and the second speed satisfying a second condition, controlling the driving part such that the first driving wheel and the second driving wheel rotate in different directions at a same speed.
Inventor(s): Kyungsoo Lee of Yongin-si (KR) for samsung electronics co., ltd., Taekkyun Shin of Kwangmyong-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F1/324, G06F1/3293, G06N3/02, G06N20/00
CPC Code(s): G06F1/324
Abstract: a context hub receives and processes data from multiple sensors. an operation method of the context hub includes identifying a pattern of context data input to the context hub from at least one of the sensors, determining a dynamic voltage-frequency scaling (dvfs) level corresponding to the identified pattern of the context data, and processing, at the context hub, the context data by using a clock signal or a driving voltage corresponding to the determined dvfs level.
Inventor(s): DAESUNG CHEON of Suwon-si (KR) for samsung electronics co., ltd., YOUNG-ROK OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/061
Abstract: disclosed is a storage device which includes non-volatile memory devices, temperature sensors, and a storage controller receiving temperature information from the temperature sensors. each of the plurality of memory blocks is allocated to one of a plurality of zones, and the storage controller performs a first zone reallocation operation to reallocate a block of a non-volatile memory device with a lower temperature to a zone with a higher hit ratio and to reallocate a block of a non-volatile memory device with a higher temperature to a zone with a lower hit ratio. the storage controller performs a first zone rating to generate a first table based on hit ratio information of the zones, performs a first memory rating to generate a second table based on the temperature information, and performs the first zone reallocation operation based on the first table and the second table.
Inventor(s): Hyunseok KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06, G06F12/02
CPC Code(s): G06F3/0616
Abstract: a memory system includes a memory module and a memory controller to control semiconductor memory devices in the memory module. each of the semiconductor memory devices provides the memory controller with an address of at least a defective memory cell row unrepairable with a redundancy resource in a memory cell array as unrepairable address information. the memory controller allocates a portion of a normal cell regions of at least one of the semiconductor memory devices as a reserved region, and remaps first and second unrepairable addresses to first and second physical addresses of the reserved region in response to first and second host physical addresses from a host matching the first and second unrepairable addresses, respectively. the first physical address and the second physical address are consecutive.
Inventor(s): Changjun LEE of Suwon-si (KR) for samsung electronics co., ltd., Dayeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Yongjun CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0619
Abstract: there is provided a storage device which includes a nonvolatile memory device that includes a first area and a second area, and a controller that receives a first command from an external host device, generates a physical address by performing first error correction decoding on a physical address entry included in the first command, reads first data from the second area of the nonvolatile memory device by using the physical address, and outputs the first data to the external host device. when the first error correction decoding fails, the controller reads first map data from the first area from the nonvolatile memory device, translates a logical address included in the first command into the physical address by using the first map data, reads the first data from the second area of the nonvolatile memory device by using the physical address, and outputs the first data to the external host device.
Inventor(s): Yonghyuk CHOI of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0619
Abstract: a nonvolatile memory device includes a memory block and a control circuit. the memory block includes cell strings. the control circuit controls a first program operation by dividing program data having threshold voltage distributions which have a plurality of states into a plurality of groups, discharging target bit-lines coupled to selected cell strings corresponding to the groups to a ground voltage during a bit-line set-up period of a program loop, discriminating a set-up timing of each of the target bit-lines based on target states of the groups during a first sub period, in which a program voltage and a program pass voltage are ramping and applying the program voltage with a signal pulse having a second target level to a selected word-line, while applying the program pass voltage having a first target level to unselected word-lines, during a second sub period.
Inventor(s): Arun GEORGE of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0631
Abstract: the disclosure provides a method, a distributed controller and a system for managing sequential storage devices in a distributed storage environment. the method comprising receiving a client allocation request from a client device and determining at least one zone set from a plurality of zone set based on the client allocation request and predefined i/o parameters. each zone set of the plurality of zone set comprises a plurality of zones of sequential storage devices. thereafter, method comprises provisioning the at least one zone set to the client device based on the client allocation request, thereby, managing the sequential storage devices. each zone of a sequential storage device is arranged into a zone set based on at least one of sequential storage device parameters, and zone parameters. the use of the distributed controller allows optimizing the performance of the sequential storage devices and optimizing the network bandwidth utilization.
Inventor(s): Chang-Woo SHIN of Suwon-si (KR) for samsung electronics co., ltd., Soon-Wan KWON of Suwon-si (KR) for samsung electronics co., ltd., Seijoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunsoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungkeun YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F5/01
CPC Code(s): G06F5/01
Abstract: an electronic device and method with data scaling is provided herein. the electronic device may include a computing device that includes an analog computing circuit, where the computing device may scale an input of the analog computing circuit using a first scaling factor and/or scale a weight of the analog computing circuit using a second scaling factor, where the input includes a plurality of input values within a preset input maximum range of values of the computing device, and the weight includes a plurality of weight values within a preset weight maximum range of values of the computing device, and rescale an output of the analog computing circuit based on the first scaling factor and/or the second scaling factor. the first and second scaling factors may respectively scale values of the input and the weight to exceed respective preset maximum ranges of values.
Inventor(s): Daekun YOON of Suwon-si (KR) for samsung electronics co., ltd., Soon-Wan KWON of Suwon-si (KR) for samsung electronics co., ltd., Seok Ju YUN of Suwon-si (KR) for samsung electronics co., ltd., Jaehyuk LEE of Suwon-si (KR) for samsung electronics co., ltd., Dong-Jin CHANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F7/544, G06F7/501, G11C7/10
CPC Code(s): G06F7/5443
Abstract: disclosed is an in-memory computing device and method. the in-memory computing device includes: a memory unit including bit cells configured to store first input data having a reference-bit-count, receive second input data also having the reference-bit-count, and perform a multiplication operation between the first input data and the second input data; and an operation unit including: a first adder tree configured to output intermediate operation results by adding results of performing the multiplication operation output with respect to each of the bit cells; a branch module configured to branch the intermediate operation results according to an operation mode of the in-memory computing device; and a second adder tree configured to output a final operation result based on an output of the branch module.
Inventor(s): Haewook LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyunjoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Kwanhee JEONG of Suwon-si (KR) for samsung electronics co., ltd., Hyojong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/14
CPC Code(s): G06F11/1469
Abstract: an electronic device may comprise memory for storing a file obtained by compressing a file including at least one module as a package, and a processor, wherein the processor: generates an uncompressed file by decompressing the compressed file; stores the generated uncompressed file in the memory; during booting of the electronic device, identifies whether deformation has occurred in the uncompressed file; and in response to the occurrence of deformation in the uncompressed file, performs a recovery operation for the uncompressed file. a method comprises: generating an uncompressed file by decompressing a file obtained by compressing a file including at least one module as a package; storing the generated uncompressed file in a memory; during booting of the electronic device, identifying whether deformation has occurred in the uncompressed file; and in response to the occurrence of deformation in the uncompressed file, performing a recovery operation for the uncompressed file.
Inventor(s): Junyoung Park of Suwon-si (KR) for samsung electronics co., ltd., Joohwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Jindo Byun of Suwon-si (KR) for samsung electronics co., ltd., Eunseok Shin of Suwon-si (KR) for samsung electronics co., ltd., Hyunyoon Cho of Suwon-si (KR) for samsung electronics co., ltd., Junghwan Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/16, G06F1/10
CPC Code(s): G06F11/1604
Abstract: the memory device includes a clock receiver receiving an external clock signal, a transmitter receiving first to nth data in parallel and sequentially outputting the first to nth data based on first to nth clock signals including different phases, and a qec circuit correcting a skew between the first to nth clock signals, wherein the external clock signal includes a same frequency as the first to nth clock signals, and the qec circuit selectively receives the first clock signal among the first to nth clock signals, generates the second clock signal including a phase different from a phase of the first clock signal based on a delay operation with respect to the first clock signal, and corrects the skew between the first to nth clock signals by performing a phase comparison between the first to nth clock signals generated based on the first and second clock signals.
Inventor(s): Seongbeom KIM of Suwon-si (KR) for samsung electronics co., ltd., Jintaek KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/34
CPC Code(s): G06F11/3457
Abstract: an electronic device includes one or more processors configured to generate profile data on operations of target hardware among pieces of hardware in response to performing a workload in a first-level simulator for a system model combining the pieces of hardware, and output performance data of the target hardware in response to simulating the profile data in a second-level simulator for the target hardware.
Inventor(s): SEUNG-HO LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/02
CPC Code(s): G06F12/0292
Abstract: disclosed is an operation method of a storage device which includes receiving a record including owner data and time information, mapping the time information included in the received record to a physical address of a non-volatile memory, storing part or all of the record including the owner data to the mapped physical address of the non-volatile memory, receiving an access request including a time period, generating output data by performing data processing with respect to owner data corresponding to the time period, and transmitting the output data to the outside.
Inventor(s): Yuhwan RO of Suwon-si (KR) for samsung electronics co., ltd., Hyunsoo KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/0815
CPC Code(s): G06F12/0815
Abstract: disclosed are an electronic device for maintaining the cache coherency of data related to a processing-in-memory (pim) operation, a processor, and an operating method of the electronic device. the electronic device includes: a processor configured to, when processing an instruction causing a processing-in-memory (pim) operation, selectively target, for movement from a cache to a memory, data related to the pim operation that is stored in the cache; and the memory configured to, based on the targeting of the data for movement from the cache to the memory, receive the data from the cache, and perform the pim operation on the data in the memory based on a command corresponding to the instruction that is relayed from the processor.
Inventor(s): Sungjin KIM of Suwon-si (KR) for samsung electronics co., ltd., Jea-Young KWON of Suwon-si (KR) for samsung electronics co., ltd., Jaesub KIM of Suwon-si (KR) for samsung electronics co., ltd., Hongmoon WANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/1027
CPC Code(s): G06F12/1027
Abstract: a storage device includes a nonvolatile memory and a controller configured to manage data, stored in the nonvolatile memory, through a plurality of namespaces. the plurality of namespaces may include a first namespace, allocated to a first logical address space, and a second namespace allocated to a second logical address space, contiguous to the first logical address space. the controller may be configured to delete the first namespace in the first logical address space in response to a request of deleting the first name space, to copy the mapping information on the second namespace from the second logical address space to the first logical address space, and to load the mapping information on the second namespace into a cache.
Inventor(s): Wangyong Im of Suwon-si (KR) for samsung electronics co., ltd., Byoungkon Jo of Suwon-si (KR) for samsung electronics co., ltd., Gyesik Oh of Suwon-si (KR) for samsung electronics co., ltd., Duksung Kim of Suwon-si (KR) for samsung electronics co., ltd., Jangseok Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F13/16, G06F13/40
CPC Code(s): G06F13/1668
Abstract: an apparatus includes a first die connected to a second die through a die-to-die (d2d) interface. the first die includes a first interconnect configured to provide first lanes communicating with the second die to the d2d interface, the first interconnect includes a first logic circuit configured to indicate a correlation between a number of chiplet dies connected to the first lanes and connected signal pins from among a plurality of signal pins of the connected chiplet dies. the second die includes the number of connected chiplet dies each including a second interconnect configured to provide second lanes to the d2d interface from each of the connected chiplet dies. the second lanes are configured to be set according to a number of the connected signal pins of the connected chiplet dies.
Inventor(s): Myeongjin OH of Suwon-si (KR) for samsung electronics co., ltd., Moonkyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongwook SEO of Suwon-si (KR) for samsung electronics co., ltd., Seyeong LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F21/57
CPC Code(s): G06F21/572
Abstract: an electronic device according to various embodiments comprises: a communication interface comprising communication circuitry, memory, and at least one processor comprising processing circuitry. the memory storing instructions which, when executed by the processor, cause the electronic device to acquire first identification information written on an application package during an application package generation process; acquire second identification information that can have a different value according to the download route of the application package; generate authentication information based on the first identification information and the second identification information; and control the installation of the application based on the authentication information.
Inventor(s): Jichull JEONG of Suwon-si (KR) for samsung electronics co., ltd., Hyunjoong KIM of Suwon-si (KR) for samsung electronics co., ltd., Taehyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Euihyun CHEON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F30/392
CPC Code(s): G06F30/392
Abstract: provided is a method of designing an integrated circuit, the method including generating a layout based on data defining a circuit, receiving at least one state variable of reinforcement learning, and updating the layout based on the at least one state variable, wherein the updating of the layout includes modifying the circuit based on the at least one state variable, synchronizing the circuit with the layout, performing a post-layout simulation based on a result of the synchronization, calculating result value of the simulation, and determining whether to modify the at least one state variable through the reinforcement learning according to the result value.
Inventor(s): Jongseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyun Oh SONG of Seoul (KR) for samsung electronics co., ltd., Deok Jae LEE of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G06F40/279, G06F40/247
CPC Code(s): G06F40/279
Abstract: a method and apparatus for classifying a text using a text classification model are disclosed. in one general aspect, an apparatus is for outputting a classification result for an input text including words by using a text classification model, and the apparatus includes: one or more processors; a memory including instructions configured to cause the one or more processors to: determine whether the input text indicates an anomaly; and responsive to determining that the input text indicates an anomaly: determine saliencies of the respective words; select target words from among the words based on the saliencies; generate a replaced text by replacing, in the input text, the selected words with other words; and obtain a text classification result of the input text based on an inference upon the replaced text by the text classification model receiving the replaced text as an input.
20240242059. SMART CARD_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kyeongdo KIM of Suwon-si (KR) for samsung electronics co., ltd., Minhyeok KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06K19/077, G05F1/575
CPC Code(s): G06K19/07773
Abstract: a smart card may include: an antenna configured to receive at least one radio signal;
20240242059. SMART CARD_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kyeongdo KIM of Suwon-si (KR) for samsung electronics co., ltd., Minhyeok KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06K19/077, G05F1/575
CPC Code(s): G06K19/07773
Abstract: a load circuit that is connected to both ends of the antenna; a rectifier configured to rectify the at least one radio signal received through the antenna, and provide the rectified signal to an output terminal; and a power generator including a voltage regulator, a first diode, and a second diode, the voltage regulator configured to provide an internal voltage, the first diode and the second diode connected in series between the output terminal of the rectifier and a first node, and the first node is configured to receive the internal voltage during a first mode of the smart card, the first mode being a mode during which a load of the load circuit is modulated.
Inventor(s): Srinivas Soumitri MIRIYALA of Visakhapatnam (IN) for samsung electronics co., ltd., Ashutosh Pavagada VISWESWARA of Bangalore (IN) for samsung electronics co., ltd., Suhas P K of Bangalore (IN) for samsung electronics co., ltd., Vikram Nelvoy RAJENDIRAN of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): G06N3/04
CPC Code(s): G06N3/04
Abstract: according to an embodiment of the disclosure, a method may include providing, by the electronic device, a plurality of pareto fronts based on at least two performance parameters. the method may include identifying, by the electronic device, an optimal pareto front from among the plurality of pareto fronts. the method may include providing, by the electronic device, a second ai model iteratively. the method may include identifying, by the electronic device, whether the second ai model belongs to the optimal pareto front. the method may include identifying, by the electronic device, the at least two performance parameters corresponding to the second ai model based on identifying that the second ai model belongs to the optimal pareto front. the method may include obtaining, by the electronic device, the second ai model based on identifying that the second ai model meets one or more predetermined performance parameters.
Inventor(s): Jongseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungyong MOON of Seoul (KR) for samsung electronics co., ltd., Hyun Oh SONG of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/08
CPC Code(s): G06N3/08
Abstract: an apparatus and method with out-of-distribution data detection is provided. the apparatus includes one or more processors configured to execute instructions; and one or more memories storing the instructions, wherein, the execution of the instructions by the one or more processors configures the one or more processors to generate output data using a neural network model provided input data; determine, based on the output data, a maximum loss value among calculated loss values that correspond to neighboring data within a reference distance from the input data; and detect, based on the maximum loss value and a threshold, whether the input data is out-of-distribution (ood) data that is different from in-distribution data corresponding to training data used in a training of the neural network model.
Inventor(s): Seohyung LEE of Suwon-si (KR) for samsung electronics co., ltd., Jiho CHOI of Suwon-si (KR) for samsung electronics co., ltd., Byung In YOO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/09, G06N3/048
CPC Code(s): G06N3/09
Abstract: an apparatus and method for training a neural network model for classification without a teacher model are disclosed. the includes: selecting classes from a database comprising a set of classes; generating a mean feature group comprising mean features extracted from the selected classes; receiving a batch comprising input data and extracting, by the neural network model, a feature from the input data, wherein the neural network model is to be trained according to a mean feature set; determining a first similarity between the extracted feature and a mean feature corresponding to the input data; determining a second similarity comprising a self-similarity of the mean feature; and updating a parameter of the neural network model based on the first similarity and the second similarity.
Inventor(s): Sung-Jae CHO of Suwon-si (KR) for samsung electronics co., ltd., Changyong SON of Suwon-si (KR) for samsung electronics co., ltd., Jongseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Jonghoon YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/0985
CPC Code(s): G06N3/0985
Abstract: a method of searching for hyperparameters for neural network learning includes: obtaining a preset early stop point; determining whether a current trial, among trials for searching for different combinations of hyperparameters, corresponds to a dry run trial; in response to a determination that the current trial corresponds to a dry run trial: executing learning epochs belonging to the current trial; searching for a combination of hyperparameters assigned to the current trial according to a result of the executing of the learning epochs; and changing the early stop point by based on whether an early stop with respect to a found combination of the hyperparameters is a success in each of the learning epochs.
Inventor(s): Geuntae BAE of Suwon-si (KR) for samsung electronics co., ltd., Kiha KIM of Suwon-si (KR) for samsung electronics co., ltd., Keunmo PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N20/00
CPC Code(s): G06N20/00
Abstract: a data processing apparatus and data processing method are provided. the data processing apparatus includes one or more processors configured to execute instructions, a memory configured to store the instructions that, when executed by the one or more processors, configure the one or more processors to determine first operation result data using a computational algorithm in a first predetermined time period and predict second predicted result data of a set second time period using a machine learning model provided the first operation result data; and determine third operation result data using the computational algorithm in a set third time period after the second time period.
Inventor(s): Minsu KANG of Suwon-si (KR) for samsung electronics co., ltd., Kwangeun KIM of Suwon-si (KR) for samsung electronics co., ltd., Janghoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Seoyoung PARK of Suwon-si (KR) for samsung electronics co., ltd., Sangho YUN of Suwon-si (KR) for samsung electronics co., ltd., Sungeun LEE of Suwon-si (KR) for samsung electronics co., ltd., Woojin JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T5/00
CPC Code(s): G06T5/006
Abstract: an scanning electron microscope (sem) image distortion correction method includes obtaining at least one sem image of holes provided on a wafer in a two-dimensional array structure, the holes including at least one central hole within a central region of the at least one sem image and a plurality of peripheral holes outside the central region, expanding each of the plurality of peripheral holes in a minor axis direction such that a ratio of a minor axis to a major axis of each of the plurality of peripheral holes is about 1:1, and expanding each of the plurality of peripheral holes in multiple directions in the at least one sem image such that a diameter of the at least one central hole and a diameter of at least one of the plurality of peripheral holes are substantially equal to each other.
Inventor(s): Yi ZHOU of Beijing (CN) for samsung electronics co., ltd., Seungin PARK of Suwon-si (KR) for samsung electronics co., ltd., Byung In YOO of Suwon-si (KR) for samsung electronics co., ltd., Sangil JUNG of Suwon-si (KR) for samsung electronics co., ltd., Hui ZHANG of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): G06T7/50, G06V10/44, G06V10/74, G06V10/80
CPC Code(s): G06T7/50
Abstract: a processor-implemented method including generating a depth-aware feature of an image dependent on image features extracted from image data of the image and generating image data, representing information corresponding to one or more segmentations of the image, based on the depth-aware feature and a depth-aware representation, the depth-aware representation being depth-related information and visual-related information for the image.
Inventor(s): Heungryong OH of Suwon-si (KR) for samsung electronics co., ltd., Donghyun SOHN of Suwon-si (KR) for samsung electronics co., ltd., Jingeun PARK of Suwon-si (KR) for samsung electronics co., ltd., Heekyung YANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T13/40, G06T15/04, G06T17/20, G06T19/00
CPC Code(s): G06T13/40
Abstract: in various embodiments, a server for managing electronic devices is provided. the server includes a memory storing instructions, and at least one processor. the at least one processor is configured to execute the instructions to obtain first image information for an object from an electronic device, obtain second image information for the object from a robot cleaner, generate avatar information for displaying an avatar of the object in a virtual space of a metaverse, based on the first image information and the second image information, and transmit the avatar information to a metaverse server for providing the virtual space of the metaverse.
Inventor(s): Byeongju PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V10/774, G06V10/26, G06V10/764, G06V10/77
CPC Code(s): G06V10/774
Abstract: a method performed by an electronic device is provided. the method includes identifying, by the electronic device, a first image corresponding to a first scene identifier, by using a first artificial intelligence (ai) model and the first image, identifying, by the electronic device, at least one first area contributing to classification of the first image as the first scene identifier, identifying, by the electronic device, training data for the first ai model by performing first processing for changing a pixel value of at least a part of the at least one first area of the first image.
Inventor(s): Sangkyu PARK of Suwon-si (KR) for samsung electronics co., ltd., Keunseo KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V10/82, G06V10/77, G06V10/771, G06V10/776
CPC Code(s): G06V10/82
Abstract: a method and electronic device are provided herein. a processor-implemented method may include training a neural network through representation learning using, as training data, a plurality of signal images, a respective metadata mapped to each of the plurality of signal images, and a respective temporary classified label of each of the plurality of signal images, extracting latent features for each of the plurality of signal images using the trained neural network, and generating a feature map representing the plurality of signal images based on respective differences between the extracted latent features, and correcting label information, for a signal image and for a corresponding temporary classification label in the respective temporary classified labels, to have corrected classification information, including determining that the corresponding temporary classification label of the signal image is mislabeled using the generated feature map.
Inventor(s): Yongseok LEE of Suwon-si (KR) for samsung electronics co., ltd., Sejin KWAK of Suwon-si (KR) for samsung electronics co., ltd., Geunho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V20/50, G01C21/00, G06F16/29, G06F16/535, G06V10/40, G06V10/74, G06V10/764, G06V10/82
CPC Code(s): G06V20/50
Abstract: a method performed by an electronic device for obtaining a spatial map is provided. the method includes recognizing an object belonging to a space from space scan information for the space obtained by using at least one sensor, obtaining feature information relating to an object unrecognizable through an object recognition model from the space scan information, identifying, by using a query based on the obtained feature information, the object unrecognizable through the object recognition model based on a personalized database, and generating a spatial map for the space based on the space scan information and object information for the object belonging to the space.
Inventor(s): Hyungdong LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V20/60, G06T7/70, G06V10/54, G06V10/56, G06V10/82
CPC Code(s): G06V20/60
Abstract: a method of providing information about an internet-of-things (iot) device available in an indoor area, includes: identifying an object in a captured image of the indoor area; identifying a feature of the object based on the captured image, the feature being related to at least one operation method of the object or a configuration of the object; determining an iot device corresponding to the object, based on a type of the object and the feature of the object; and providing information about the determined iot device.
Inventor(s): Jinhyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jongwoon JANG of Suwon-si (KR) for samsung electronics co., ltd., Taehoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Sungoh KIM of Suwon-si (KR) for samsung electronics co., ltd., Bongseok PARK of Suwon-si (KR) for samsung electronics co., ltd., Donghyuk AHN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/00, G06F1/16, G06F3/14
CPC Code(s): G09G3/035
Abstract: an electronic device is provided. the electronic device includes a flexible display in which an externally exposed region decreases as the flexible display goes into the electronic device and the externally exposed region expands as the flexible display comes out of the electronic device, a camera module including an image sensor, at least one sensor, and at least one processor, wherein the at least one processor is configured to acquire an image through the entire region of the image sensor based on a user input, identify the externally exposed region of the flexible display through the at least one sensor, determine, in the image, an image portion corresponding to identified region of the flexible display, and display determined image portion through the flexible display.
Inventor(s): Juyeoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Minsoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Sanghyuk KOH of Suwon-si (KR) for samsung electronics co., ltd., Seonkeun PARK of Suwon-si (KR) for samsung electronics co., ltd., Sunghoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaewoong CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Hanchul JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/00, G06F3/04886
CPC Code(s): G09G3/035
Abstract: an electronic device is provided. the electronic device includes a display, memory storing one or more computer programs, and one or more processors communicatively coupled to the display and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors, cause the electronic device to control the display to display a first screen in a first area of the display during a first state in which a second area among the first area and the second area of the display is not exposed to an outside of the electronic device, detect an event in a state in which the first screen is displayed in the first area, control, based on detection of the event, the display to display a first object corresponding to the event in a partial area of the first area, the first object being displayed in at least a part of the first screen, identify a first gesture input of a user in an area in which the first object is displayed, in a state in which an area ratio of a size of the first object to a size of the first area is equal to or greater than a designated ratio, and control, in response to the identification of the first gesture input, the electronic device to change a state of the display from the first state to a second state in which the first area and the second area of the display are exposed to the outside of the electronic device.
Inventor(s): Hyunson Seo of Suwon-si (KR) for samsung electronics co., ltd., Gajin Song of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/22, G10L15/06
CPC Code(s): G10L15/22
Abstract: a method of determining false rejection and an electronic device for performing the same are provided. an electronic device includes a memory storing instructions; and a processor operatively connected to the memory and configured to execute the instructions to: receive a user input; generate a detection event corresponding to a related event that is related to an utterance for which speaker recognition has failed, based on the user input; output information on the related event generated in response to the detection event; and obtain feedback on the information on the related event, wherein the feedback is used to learn a speaker model for the utterance for which the speaker recognition has failed.
Inventor(s): Jihyun Park of Suwon-si (KR) for samsung electronics co., ltd., Jungyu Lee of Suwon-si (KR) for samsung electronics co., ltd., Yumin Kim of Suwon-si (KR) for samsung electronics co., ltd., Chiweon Yoon of Suwon-si (KR) for samsung electronics co., ltd., Eunchan Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C7/04, G11C7/08, G11C7/10, G11C7/14
CPC Code(s): G11C7/04
Abstract: a memory device includes a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a voltage generator configured to output a first voltage that varies according to temperature of the memory device, a second voltage that is constant regardless of the temperature, and a first reference voltage applied to at least one line among the plurality of word lines and the plurality of bit lines, and a temperature compensation circuit configured to generate a compensation offset voltage based on the first voltage and the second voltage, and output a second reference voltage based on the first reference voltage and the compensation offset voltage.
20240242755. NON-VOLATILE MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Changbum KIM of Suwon-si (KR) for samsung electronics co., ltd., Sunghoon KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4093, G11C5/06, G11C11/4074, G11C11/4094, G11C11/4096, G11C11/4099
CPC Code(s): G11C11/4093
Abstract: a non-volatile memory device includes a first semiconductor layer and a second semiconductor layer arranged in the vertical direction. a first semiconductor layer includes a plurality of memory cells, and a plurality of metal lines extending in a first direction, and including first bit lines, second bit lines, and a common source line tapping wire between the first bit lines and the second bit lines. a second semiconductor layer includes a page buffer circuit connected to the first bit lines and the second bit lines, and the page buffer circuit includes first transistors arranged below the first bit lines and electrically connected to the first bit lines, second transistors arranged below the second bit lines and electrically connected to the second bit lines, and a first guard ring arranged below and overlapped the common source line tapping wire in the vertical direction and extending in the first direction.
Inventor(s): Jayang Yoon of Suwon-si (KR) for samsung electronics co., ltd., Chihyun Kim of Suwon-si (KR) for samsung electronics co., ltd., Sangsoo Park of Suwon-si (KR) for samsung electronics co., ltd., Junehong Park of Suwon-si (KR) for samsung electronics co., ltd., Chiweon Yoon of Suwon-si (KR) for samsung electronics co., ltd., Hyeongdo Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/10, G11C16/08, G11C16/30
CPC Code(s): G11C16/102
Abstract: a non-volatile memory device includes a memory cell array including memory cells coupled to word lines, a boost circuit that receives an external power supply voltage and generate a boosted voltage based on the external power supply voltage, a regulator that generates a regulated voltage based on the external power supply voltage, and a control logic that controls word line voltages provided to the word lines. the control logic performs plural program loops in a program operation for the memory cell array. the control logic provides an adjacent word line voltage to an adjacent word line that is adjacent to a selected word line. in a first section of the program loops, the control logic provides the regulated voltage as the adjacent word line voltage, and in a second section of the program loops, the control logic provides the boosted voltage as the adjacent word line voltage.
Inventor(s): Hyun Seo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/10, G11C16/08, G11C16/28
CPC Code(s): G11C16/102
Abstract: a memory device includes a memory cell that is configured to have data stored therein, and a control logic that is configured to determine a dummy voltage based on a location of a selected word line electrically connected to the memory cell, and is configured to apply the dummy voltage to dummy word lines. first and second ones of the dummy word lines are adjacent to opposing ends in a vertical direction of a memory nand string including the memory cell, respectively.
Inventor(s): Hojoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Jae-Duk YU of Suwon-si (KR) for samsung electronics co., ltd., Yohan LEE of Suwon-si (KR) for samsung electronics co., ltd., Jiho CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/34, G11C16/04
CPC Code(s): G11C16/3427
Abstract: a non-volatile memory device according to some example embodiments includes a memory block including a plurality of cell strings including a plurality of string selection transistors and a plurality of memory cells, a first string selection line connected to a string selection transistor of a first cell string of the plurality of cell strings, and a second string selection line connected to a string selection transistor of a second cell string of the plurality of cell strings; and a control circuit configured to control a recovery operation to apply a recovery voltage with different driving strengths to the first string selection line and the second string selection line.
Inventor(s): Haewook PARK of Suwon-si (KR) for samsung electronics co., ltd., Juhyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Younsok CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32917
Abstract: a plasma diagnostic apparatus includes a substrate having at least one probe, a plasma diagnostic circuit mounted on the substrate, configured to diagnose plasma in a chamber with the at least one probe, and to store diagnosis result information, a wireless communication circuit mounted on the substrate and configured to wirelessly transmit the diagnosis result information to an external device, and a battery mounted on the substrate and configured to supply power to the plasma diagnostic circuit and to the wireless communication circuit.
Inventor(s): Taejin CHOI of Suwon-si (KR) for samsung electronics co., ltd., Minsu KIM of Ulsan (KR) for samsung electronics co., ltd., Hyeonsuk SHIN of Ulsan (KR) for samsung electronics co., ltd., Jaewon KIM of Suwon-si (KR) for samsung electronics co., ltd., Taehoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeonjin SHIN of Suwon-si (KR) for samsung electronics co., ltd., Van Luan NGUYEN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/02, H01L29/20, H01L29/66, H01L29/78
CPC Code(s): H01L21/0254
Abstract: provided are an amorphous boron nitride film, and a semiconductor device, a field effect transistor and an image sensor which include the same, and a method of manufacturing the amorphous boron nitride film. the amorphous boron nitride film includes a carbon atom-doped amorphous boron nitride compound, wherein an spbn bonding structure and an spbn bonding structure are included in the boron nitride film, an sp/spconjugated —c═c—c═c— dopant structure being distributed in 60% or less of the entire amorphous film.
Inventor(s): Hyo Shin LIM of Suwon-si (KR) for samsung electronics co., ltd., Ho Jun LEE of Cheonan-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/67
CPC Code(s): H01L21/67046
Abstract: a substrate cleaning apparatus may include a steam injector configured to clean a substrate, a steam supplier configured to supply a steam, and a gas supplier configured to supply a gas. the steam injector may include a drive unit configured to move horizontally, a plate on the drive unit, and a plurality of nozzles on the plate. the plate may include a temperature sensor, a first pressure sensor, and a second pressure sensor. each of the plurality of nozzles may be connected to the steam supplier and the gas supplier. the plurality of nozzles may be arranged in one direction from a planar viewpoint.
Inventor(s): Sehoon JANG of Suwon-si (KR) for samsung electronics co., ltd., Inhwa BAEK of Suwon-si (KR) for samsung electronics co., ltd., Hyungku KIM of Suwon-si (KR) for samsung electronics co., ltd., Kibum YU of Suwon-si (KR) for samsung electronics co., ltd., Jaesung YUN of Suwon-si (KR) for samsung electronics co., ltd., Yongin LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaehyuk JUNG of Suwon-si (KR) for samsung electronics co., ltd., Gwanghee JO of Suwon-si (KR) for samsung electronics co., ltd., Youngjin CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/67, H01L23/00
CPC Code(s): H01L21/67092
Abstract: a substrate bonding apparatus may include a first bonding chuck including a first base and a first transformation plate, and a second including a second base facing the first bonding chuck. the first base may include a recess groove. the recess groove may be recessed inward from a surface on which the first transformation plate is mounted. the first transformation plate may include a first protrusion protruding outward from a first surface of the first transformation plate. a second surface of the first transformation plate may be opposite the first surface of the first transformation plate. the second surface of the first transformation plate may be configured to support a first substrate. the first transformation plate may be mounted on the first base in a manner allowing a distance between the first transformation plate and the first base to vary.
Inventor(s): Sangjine Park of Suwon-si (KR) for samsung electronics co., ltd., Jihwan Park of Suwon si (KR) for samsung electronics co., ltd., Kuntack Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/67, G03F7/00, H01L21/027
CPC Code(s): H01L21/67225
Abstract: provided is a substrate processing apparatus including an index module including a load port in which a substrate is accommodated, a first transfer module and a second transfer module for loading and unloading the substrate, and a processing module that is connected to the index module and includes a plurality of process chambers that process the substrate, wherein one of the plurality of process chambers includes a light processing chamber configured to irradiate light to a photoresist pattern of the substrate, the first transfer module transfers the substrate between the index module and the processing module, the second transfer module transfers the substrate between the plurality of process chambers in the processing module, the first transfer module includes a first hand unit and a second hand unit, and the second transfer module includes a third hand unit and a fourth hand unit.
20240242989. GRID STRUCTURE FOR FIXING SPECIMEN_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yeoseon Choi of Suwon-si (KR) for samsung electronics co., ltd., Unki Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/673, H01J37/20
CPC Code(s): H01L21/67336
Abstract: the present disclosure describes example apparatuses (e.g., grid structures) for fixing or holding a specimen, where the grid structure is formed by alternately stacking different layers (e.g., silicon (si) layers and silicon germanium (sige) layers). for example, the alternate layers may be visually distinguishable from each other and may have a configured thickness. as such, based on the visual distinguishability between layers and the configured thickness for each layer, the grid structure may be used to adjust the magnification during inspection of the specimen. for example, the stacked layers may serve as a scale to control the magnification of the electron microscope while inspecting the specimen based on the configured or known thickness of the layers. additionally, the orientation of the stacked layers may be used as a reference when a specimen is inspected.
Inventor(s): JIHYUN LEE of Suwon-si (KR) for samsung electronics co., ltd., EUN HYEA KO of Suwon-si (KR) for samsung electronics co., ltd., SOYOUNG LEE of Suwon-si (KR) for samsung electronics co., ltd., THANH CUONG NGUYEN of Suwon-si (KR) for samsung electronics co., ltd., HOON HAN of Suwon-si (KR) for samsung electronics co., ltd., BYUNGKEUN HWANG of Suwon-si (KR) for samsung electronics co., ltd., HIROYUKI UCHIUZOU of Suwon-si (KR) for samsung electronics co., ltd., KIYOSHI MURATA of Suwon-si (KR) for samsung electronics co., ltd., TOMOHARU YOSHINO of Suwon-si (KR) for samsung electronics co., ltd., YOUNJOUNG CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/768, H01L21/02, H01L21/311, H01L21/3213
CPC Code(s): H01L21/76831
Abstract: an inhibitor for selectively depositing a thin film may include a compound represented by formula 1 below:
Inventor(s): JIHYUN LEE of Suwon-si (KR) for samsung electronics co., ltd., EUN HYEA KO of Suwon-si (KR) for samsung electronics co., ltd., SOYOUNG LEE of Suwon-si (KR) for samsung electronics co., ltd., THANH CUONG NGUYEN of Suwon-si (KR) for samsung electronics co., ltd., HOON HAN of Suwon-si (KR) for samsung electronics co., ltd., BYUNGKEUN HWANG of Suwon-si (KR) for samsung electronics co., ltd., HIROYUKI UCHIUZOU of Suwon-si (KR) for samsung electronics co., ltd., KIYOSHI MURATA of Suwon-si (KR) for samsung electronics co., ltd., TOMOHARU YOSHINO of Suwon-si (KR) for samsung electronics co., ltd., YOUNJOUNG CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/768, H01L21/02, H01L21/311, H01L21/3213
CPC Code(s): H01L21/76831
Abstract:
Inventor(s): JIHYUN LEE of Suwon-si (KR) for samsung electronics co., ltd., EUN HYEA KO of Suwon-si (KR) for samsung electronics co., ltd., SOYOUNG LEE of Suwon-si (KR) for samsung electronics co., ltd., THANH CUONG NGUYEN of Suwon-si (KR) for samsung electronics co., ltd., HOON HAN of Suwon-si (KR) for samsung electronics co., ltd., BYUNGKEUN HWANG of Suwon-si (KR) for samsung electronics co., ltd., HIROYUKI UCHIUZOU of Suwon-si (KR) for samsung electronics co., ltd., KIYOSHI MURATA of Suwon-si (KR) for samsung electronics co., ltd., TOMOHARU YOSHINO of Suwon-si (KR) for samsung electronics co., ltd., YOUNJOUNG CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/768, H01L21/02, H01L21/311, H01L21/3213
CPC Code(s): H01L21/76831
Abstract: where, ris an aldehyde group, an amino group, a carbonyl group, a ketone group, a nitrile group, an acyl halide group, a substituted or unsubstituted c2 to c20 alkenyl group, or a substituted or unsubstituted c2 to c20 alkynyl group, ris a halogen atom, a substituted or unsubstituted c1 to c10 alkylhalide group, a substituted or unsubstituted c4 to c10 tertiary alkyl group, or a substituted or unsubstituted c1 to c10 alkylthio group, and n is an integer from 1 to 5. the inhibitor is adsorbed to a surface of a first layer but not adsorbed to a surface of a second layer. the first layer may include a metal-based material, and the second layer is different from the first layer and may include an insulating material.
20240243020. VERTICAL NON-VOLATILE MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Shinhwan KANG of Suwon-si (KR) for samsung electronics co., ltd., Sunyoung Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, H10B41/27, H10B41/41, H10B43/27, H10B43/40
CPC Code(s): H01L22/32
Abstract: a vertical non-volatile memory device, including a memory cell region including a plurality of gate lines overlapping each other in a vertical direction, and an insulating layer insulating the plurality of gate lines from each other in the vertical direction, an extension region on one side of the memory cell region, the extension region including a plurality of stepped connection portions having a plurality of raised pads integrally connected to each of the plurality of gate lines, a peripheral circuit structure in a lower portion of the memory cell region and the extension region, the peripheral circuit structure including a peripheral circuit wiring layer, a through type cell contact pattern in the extension region penetrating the plurality of gate lines, the insulating layer, and the plurality of stepped connection portions, and a through type cell contact monitoring pattern in the extension region spaced from the through type cell contact pattern.
Inventor(s): Eojin LEE of Suwon-si (KR) for samsung electronics co., ltd., Taehyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Hoyoung TANG of Suwon-si (KR) for samsung electronics co., ltd., Jaehyun LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L29/06, H01L29/417, H01L29/423, H01L29/78, H10B10/00
CPC Code(s): H01L23/481
Abstract: an integrated circuit includes: a substrate including a cell area and a dummy area, wherein a plurality of cells are arranged in the cell area; a front-side wiring layer arranged over a front surface of the substrate in a vertical direction, wherein the front-side wiring layer includes a first pattern extending in a first direction across the cell area and the dummy area and a second pattern extending in a second direction intersecting the first direction and contacting the first pattern; a through via overlapping the front-side wiring layer in the vertical direction in the dummy area and passing through the substrate; and a back-side wiring layer arranged on a rear surface of the substrate, wherein the back-side wiring layer is connected through the through via and the front-side wiring layer to at least one transistor included in the plurality of cells.
Inventor(s): HAE-JUNG YU of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L21/66, H01L23/00, H01L23/31, H01L25/10, H10B80/00
CPC Code(s): H01L23/49822
Abstract: a semiconductor package includes a package substrate, an interposer disposed on the package substrate, and a first semiconductor chip disposed on the interposer. the interposer includes a first semiconductor substrate and a first dielectric layer disposed on the first semiconductor substrate. the first dielectric layer includes a first scribe lane region. the first scribe lane region is below the first semiconductor chip along a first direction that is perpendicular to a top surface of the first semiconductor substrate. the first scribe lane region is spaced apart from a lateral surface of the interposer.
20240243053. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): JI HWANG KIM of Suwon-si (KR) for samsung electronics co., ltd., JOONSUNG KIM of Suwon-si (KR) for samsung electronics co., ltd., SANGJIN BAEK of Suwon-si (KR) for samsung electronics co., ltd., KYOUNG LIM SUK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L23/367, H01L25/065
CPC Code(s): H01L23/49838
Abstract: a semiconductor package includes a first redistribution layer; a first semiconductor chip above the first redistribution layer; a second semiconductor chip above the first semiconductor chip; a second redistribution layer above the second semiconductor chip; a first connection structure on the second redistribution layer; a connection post on the first connection structure; and a connection interconnection layer on the connection post, wherein the connection interconnection layer comprises a connection insulating layer and a connection via extending through the connection insulating layer, and wherein the second redistribution layer and the first redistribution layer are electrically connected to each other through a wire.
20240243054. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sungmin MOON of Suwon-si (KR) for samsung electronics co., ltd., Pyoungwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Giho JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L25/18, H10B80/00
CPC Code(s): H01L23/49838
Abstract: a semiconductor package may include a first wiring structure, a second wiring structure on the first wiring structure, a semiconductor chip between the first wiring structure and the second wiring structure, and an expanded structure that electrically connects the first wiring structure with the second wiring structure and surrounds the semiconductor chip. at least one of the first wiring structure and the second wiring structure may include a first insulating layer on the semiconductor chip and the expanded structure, a first wiring layer on the first insulating layer, a second insulating layer covering the first insulating layer and the first wiring layer, a crack prevention layer on the second insulating layer, and a second wiring layer on the second insulating layer and the crack prevention layer. the second wiring layer may include a pad portion.
20240243059. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): SUNGHO JANG of Suwon-si (KR) for samsung electronics co., ltd., JUNSOO KIM of Suwon-si (KR) for samsung electronics co., ltd., ILGWEON KIM of Suwon-si (KR) for samsung electronics co., ltd., DONGSOO WOO of Suwon-si (KR) for samsung electronics co., ltd., MOONYOUNG JEONG of Suwon-si (KR) for samsung electronics co., ltd., JOON HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/528
CPC Code(s): H01L23/528
Abstract: a semiconductor device may include a substrate including an insulating substrate. a semiconductor layer is on the substrate. an active pattern is on the semiconductor layer. a bit line is disposed in the insulating substrate. the bit line extends along a first direction parallel to a bottom surface of the substrate. a buried node contact penetrates the semiconductor layer in a direction perpendicular to the bottom surface of the substrate. a word line penetrates the active pattern in a second direction that is parallel to the bottom surface of the substrate and crosses the first direction. the active pattern may be connected to the bit line through the buried node contact. a top surface of the buried node contact may be higher than a bottom surface of the active pattern.
20240243064. INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jeongyeon Seo of Suwon-si (KR) for samsung electronics co., ltd., Sungwoo Kang of Suwon-si (KR) for samsung electronics co., ltd., Hyonwook Ra of Suwon-si (KR) for samsung electronics co., ltd., Hongsik Shin of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/528, H01L23/522, H01L27/088, H01L29/06, H01L29/423, H01L29/775
CPC Code(s): H01L23/5286
Abstract: an integrated circuit device includes a fin-type active region that extends from a substrate and in a first lateral direction, a device isolation film on a trench region on the substrate, an insulating liner structure that extends through the substrate in a vertical direction and contacts the device isolation film at a first vertical level, a via power rail that extends through the device isolation film in the vertical direction and comprising a first bottom surface at a second vertical level, and a backside power rail comprising a main rail and a protrusion rail, where the main rail extends through the substrate and the insulating liner structure in the vertical direction, and where the protrusion rail extends from the main rail toward the via power rail.
Inventor(s): Jaekul LEE of Yongin-si (KR) for samsung electronics co., ltd., Hyungsun JANG of Hwaseong-si (KR) for samsung electronics co., ltd., Gayoung KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Minjeong SHIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L25/10
CPC Code(s): H01L24/20
Abstract: a semiconductor package includes a lower redistribution layer disposed on a lower surface of the semiconductor chip including an insulating layer, a redistribution pattern, a via, an under bump metal (ubm), and a post disposed on the redistribution pattern. the post vertically overlaps with the ubm. a mold layer is on the lower redistribution layer and surrounds the semiconductor chip. a connecting terminal is connected to the ubm. the ubm includes a first section contacting the redistribution pattern, and a second section contacting the insulating layer. the post has a ring shape having an inner surface and an outer surface when viewed in a top view. a maximum width of the inner surface is less than a maximum width of an upper surface of the first section. a maximum width of the outer surface is greater than the maximum width of the upper surface of the first section.
20240243096. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Moonyong Jang of Suwon-si (KR) for samsung electronics co., ltd., Sangsub Song of Suwon-si (KR) for samsung electronics co., ltd., Keunyoung Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/498
CPC Code(s): H01L25/0652
Abstract: embodiments of the present disclosure include a semiconductor package comprising a first substrate including a plurality of wires stacked in a plurality of layers in a vertical direction, a plurality of chip stack structures spaced apart from each other on the first substrate and arranged in a first direction, a processor chip disposed on the first substrate, and a chip-to-chip wire connecting a chip stack structure that is disposed closest to the processor chip among the plurality of chip stack structures, wherein each of the plurality of chip stack structures includes a plurality of semiconductor chips offset-stacked in the first direction and a plurality of wires connecting the plurality of semiconductor chips to one another.
Inventor(s): Yikoan Hong of Suwon-si (KR) for samsung electronics co., ltd., Seokho Kim of Suwon-si (KR) for samsung electronics co., ltd., Kwangjin Moon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/31, H01L23/498, H01L23/544, H10B80/00
CPC Code(s): H01L25/0657
Abstract: provided is a semiconductor package including a first semiconductor chip, at least one second semiconductor chip on a top surface of the first semiconductor chip, a molding layer on the at least one second semiconductor chip, and a marking layer on at least one side of the molding layer, the marking layer including a hydrophobic material, wherein inner sidewalls of the marking layer contact a lower portion of sidewalls of the molding layer.
Inventor(s): Seunghoon Yeon of Suwon-si (KR) for samsung electronics co., ltd., Seungryong Oh of Suwon-si (KR) for samsung electronics co., ltd., Junho Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/31
CPC Code(s): H01L25/0657
Abstract: a semiconductor package includes a first semiconductor chip and a second semiconductor chip. the first semiconductor chip includes a plurality of electrode bundles arranged in an array in a first substrate and each having a plurality of through electrodes penetrating the first substrate, a backside insulating layer on a backside surface of the first substrate through which end portions of the through electrodes are exposed, and a plurality of electrode pads respectively provided on the electrode bundles. the backside insulating layer has a first trench formed between the through electrodes of a first electrode bundle. a first electrode pad is disposed on the through electrodes of a first electrode bundle and includes a protruding portion that fills the first trench of the backside insulating layer.
20240243110. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): HYEONJEONG HWANG of Suwon-si (KR) for samsung electronics co., ltd., SUNGEUN JO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/10, H01L23/00, H01L23/367, H01L23/498, H01L23/538, H10B80/00
CPC Code(s): H01L25/105
Abstract: disclosed is a semiconductor package comprising an interposer substrate, a chip stack on the interposer substrate and including first semiconductor chips that are vertically stacked, a second semiconductor chip on the interposer substrate and horizontally spaced apart from the chip stack, a molding layer on the interposer substrate and surrounding the chip stack and the second semiconductor chip, a redistribution layer on the molding layer, and a plurality of conductive posts that vertically penetrate the molding layer and connect the interposer substrate to the redistribution layer.
20240243111. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Chajea JO of Suwon-si (KR) for samsung electronics co., ltd., Dohyun KIM of Suwon-si (KR) for samsung electronics co., ltd., SeungRyong OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/10, H01L23/00, H01L23/31, H01L23/48, H01L23/498, H01L23/522, H01L25/065
CPC Code(s): H01L25/105
Abstract: a semiconductor package includes a lower package and an upper package on the lower package. the lower package includes a first substrate, chip stacks on the first substrate, a first mold structure on the first substrate that covers the chip stacks, and a second substrate on the first mold structure. the chip stacks include a first semiconductor chip and a second semiconductor chip on the first semiconductor chip. the first semiconductor chip includes a first semiconductor substrate, a first wiring layer adjacent the first semiconductor substrate and including wiring patterns, a first circuit layer on the first semiconductor substrate and including a transistor and circuit wirings connected to the transistor, and a chip through electrode penetrating at least a portion of the first circuit layer and the first semiconductor substrate and a height of the chip through electrode ranges from 2 �m to 50 �m.
Inventor(s): Yongeun Cho of Suwon-si (KR) for samsung electronics co., ltd., Eunhee Choi of Suwon-si (KR) for samsung electronics co., ltd., Kibum Kim of Suwon-si (KR) for samsung electronics co., ltd., Seonkyeong Kim of Suwon-si (KR) for samsung electronics co., ltd., Hayoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyunjeong Roh of Suwon-si (KR) for samsung electronics co., ltd., Moogyu Bae of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/02, H01L23/528, H01L27/092
CPC Code(s): H01L27/0207
Abstract: an integrated circuit includes a first region having a plurality of first cells arranged in first rows extending in a first direction and a plurality of first gate electrodes extending in a second direction that crosses the first direction, a second region having a plurality of second cells arranged in second rows extending in the first direction and a plurality of second gate electrodes extending in the second direction, and a third region between the first region and the second region and having a plurality of third gate electrodes extending in the second direction. a second height of each of the second rows is greater than a first height of each of the first rows. a pitch of the first gate electrodes, a pitch of the second gate electrodes, and a pitch of the third gate electrodes are the same.
20240243125. INTEGRATED CIRCUIT DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seongyul PARK of Suwon-si (KR) for samsung electronics co., ltd., Myoungho KANG of Suwon-si (KR) for samsung electronics co., ltd., Changhyeon LEE of Suwon-si (KR) for samsung electronics co., ltd., Yeazi HEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/088
CPC Code(s): H01L27/088
Abstract: an integrated circuit device may include fin-type active regions protruding from a surface of a substrate and extending in a first horizontal direction, at least one gate pillar on the substrate and extending in the first horizontal direction, and a plurality of gate groups arranged in a second horizontal direction on the plurality of fin-type active regions. each of the plurality of gate groups may include a plurality of gate patterns spaced apart from each other in the second horizontal direction. each of the plurality of gate patterns may extend in the second horizontal direction. the plurality of gate patterns each may include at least one dummy gate pattern on at least one end of a corresponding one of the plurality of gate groups in the second horizontal direction. the at least one dummy gate pattern may be in contact with and connected to the at least one gate pillar.
Inventor(s): Hyeon Gyu YOU of Suwon-si (KR) for samsung electronics co., ltd., In Gyum KIM of Suwon-si (KR) for samsung electronics co., ltd., Gi Young YANG of Suwon-si (KR) for samsung electronics co., ltd., Ji Su YU of Suwon-si (KR) for samsung electronics co., ltd., Jin Young LIM of Suwon-si (KR) for samsung electronics co., ltd., Hak Chul JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/118, H01L27/02
CPC Code(s): H01L27/11807
Abstract: an integrated circuit includes a first standard cell including a first first-type transistor, a first second-type transistor, a third second-type transistor, and a third first-type transistor, a second standard cell including a second first-type transistor, a second second-type transistor, a fourth second-type transistor and a fourth first-type transistor, a plurality of wiring layers which are disposed on the first and second standard cells and includes a first wiring layer, a second wiring layer, and a third wiring layer sequentially stacked. a source contact of the first first-type transistor and a source contact of the second first-type transistor are electrically connected through a first power rail of the plurality of wiring layers, and a source contact of the third first-type transistor and a source contact of the fourth first-type transistor are electrically connected through a second power rail of the plurality of wiring layers.
Inventor(s): Sanghyuck MOON of Suwon-si (KR) for samsung electronics co., ltd., Jueun Park of Suwon-si (KR) for samsung electronics co., ltd., Hyuncheol Kim of Suwon-si (KR) for samsung electronics co., ltd., Eunsub Shim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14612
Abstract: an image sensor, including a shared pixel including two sub pixels of a 1x2 structure and sharing a floating diffusion region on each of the two sub pixels through a metal wiring, unit pixels surrounding the floating diffusion region, within the shared pixel, separated from each other by front-side deep trench isolation, and each including a photodiode, a transfer transistor adjacent to the floating diffusion region and on each of the unit pixels, a reset transistor and a selection transistor on a first unit pixel located in a first quadrant among the unit pixels, a conversion gain transistor on a second unit pixel located in a second quadrant among the unit pixels, and a source follower transistor on a third unit pixel located in a third quadrant and a fourth unit pixel located in a fourth quadrant among the unit pixels.
20240243144. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kwang-Min LEE of Suwon-si (KR) for samsung electronics co., ltd., Kisang YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, G02B1/116
CPC Code(s): H01L27/1462
Abstract: provided is an image sensor, which includes a first substrate that has a first surface and a second surface opposite to the first surface, and includes a pixel array area and an edge area, the edge area including a first conductive pad; an anti-reflection structure on the second surface; a pixel isolator in the first substrate and defining and separating pixels; and a micro lens array that is disposed on the anti-reflection structure, in which the anti-reflection structure includes a first insulating layer, a conductive layer, a second insulating layer, and a third insulating layer sequentially stacked, the conductive layer is on the pixel array area, and is not at least in a portion of the edge area where the first conductive pad is arranged, and a voltage is configured to be applied to the conductive layer.
Inventor(s): Sungmo AHN of Suwon-si (KR) for samsung electronics co., ltd., Sangeun Mun of Suwon-si (KR) for samsung electronics co., ltd., Hyunsung Park of Suwon-si (KR) for samsung electronics co., ltd., Sookyoung Roh of Suwon-si (KR) for samsung electronics co., ltd., Seokho Yun of Suwon-si (KR) for samsung electronics co., ltd., Choonlae Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, G02B1/00
CPC Code(s): H01L27/14625
Abstract: an image sensor includes a plurality of pixels, where each of the plurality of pixels includes a photoelectric conversion layer and a color routing meta-structure layer provided on the photoelectric conversion layer, where a first center line passing through a center of a lower surface and a center of an upper surface of a first color routing meta-structure layer of a first pixel among the plurality of pixels is inclined with respect to a second center line passing through a center of a lower surface and a center of an upper surface of a second color routing meta-structure layer of a second pixel among the plurality of pixels and where at least one of the first center line and the second center line is inclined with respect to an optical axis of the image sensor.
Inventor(s): Choonlae CHO of Suwon-si (KR) for samsung electronics co., ltd., Sookyoung ROH of Suwon-si (KR) for samsung electronics co., ltd., Sangyun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, H04N25/13
CPC Code(s): H01L27/14627
Abstract: an image sensor includes a sensor substrate including a first pixel and a fourth pixel each detecting green light, a second pixel detecting blue light, and a third pixel detecting red light, and a color separation lens array configured to separate incident light according to wavelengths and condense the incident light onto the first to fourth pixels. the color separation lens array includes first, second, third, and to fourth pixel correspondence regions respectively facing the first to fourth pixels, and the first to fourth pixel correspondence regions respectively include a plurality of first to fourth nanoposts that are arranged in different arrangement patterns in the first to fourth pixel correspondence regions.
Inventor(s): Sangyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Sookyoung ROH of Suwon-si (KR) for samsung electronics co., ltd., Seokho YUN of Suwon-si (KR) for samsung electronics co., ltd., Junho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14627
Abstract: provided is an image sensor that includes a sensor substrate including a plurality of pixels, a nano-photonic lens array including a plurality of nano-structures that are disposed to color-separate incident light and condense the color-separated incident light onto the plurality of pixels, and a color filter layer including a plurality of color filters, wherein the total number of color filters transmitting the light of a first wavelength band is greater than a number of color filters transmitting the light of a second wavelength band and the number of the color filters transmitting the light of a third wavelength band, and the plurality of nano-structures of the nano-photonic lens array color-separate and condense the light of the second wavelength band and the light of the third wavelength band, and condense the light of the first wavelength band without color-separation.
20240243150. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jae-Kwan Seo of Suwon-si (KR) for samsung electronics co., ltd., Si Ho Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyung Suk Oh of Suwon-si (KR) for samsung electronics co., ltd., Young Gil Yoon of Suwon-si (KR) for samsung electronics co., ltd., Woo Won Lee of Suwon-si (KR) for samsung electronics co., ltd., Seul-Young Jeong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14627
Abstract: an image sensor includes a substrate including a first region and a second region disposed in a periphery of the first region. the first region includes a plurality of unit pixels and a color filter structure, and the second region includes a dummy structure including a second color filter and a plurality of dummy lenses on the second color filter. the color filter structure includes a first extension portion extending in a first direction and a second extension portion extending in a second direction, and the dummy structure includes a third extension portion extending in the first direction and a fourth extension portion extending in the second direction. a first micro-lens, a second micro-lens, and a third micro-lens are in a first corner portion, and a first dummy lens, a second dummy lens, and a third dummy lens are in the second corner portion.
Inventor(s): Junghye Kim of Suwon-si (KR) for samsung electronics co., ltd., Gilwoo Kong of Suwon-si (KR) for samsung electronics co., ltd., Donghyun Kim of Suwon-si (KR) for samsung electronics co., ltd., Sungin Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/1463
Abstract: an image sensor includes a substrate and first and second shared pixels, which extend adjacent to each other in a first direction across the substrate. each of the shared pixels includes: a plurality of floating diffusion regions at spaced apart locations within the substrate, and a plurality of spaced-apart source follower gates electrically connected to the plurality of floating diffusion regions. a deep trench isolation structure is provided, which extends within the substrate and at least partially partitions the first and second shared pixels from each other. a contact barrier structure is provided, which extends on the substrate, vertically overlaps the deep trench isolation structure, at least partially partitions the first and second shared pixels from each other, and is arranged with a long axis in a second direction orthogonal to the first direction and between the source follower gate of the first shared pixel and the source follower gate of the second shared pixel.
20240243153. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Minjun CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jihyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Hyoeun KIM of Suwon-si (KR) for samsung electronics co., ltd., Surim LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, H01L23/00, H01L23/522
CPC Code(s): H01L27/14634
Abstract: an image sensor is provided. the image sensor includes a first semiconductor chip including a first semiconductor substrate having a pixel unit, a first wiring structure having a first wiring layer, and a first bonding pad; a second semiconductor chip including a second semiconductor substrate having first and second surfaces, a second wiring structure on the first surface, contacting the first wiring structure, and having a second wiring layer, a second upper bonding pad bonded to the first bonding pad, and a via structure connected to the second wiring layer and extending to the second surface; a bonding layer including a bonding insulating layer on the second surface, and a second lower bonding pad connected to the via structure; and a third semiconductor chip including a third semiconductor substrate, a third wiring structure contacting the bonding insulating layer, and a third bonding pad bonded to the second lower bonding pad.
Inventor(s): Jooho LEE of Suwon-si (KR) for samsung electronics co., ltd., Yong-Hee CHO of Hwaseong-si (KR) for samsung electronics co., ltd., Jinhong KIM of Suwon-si (KR) for samsung electronics co., ltd., Changsoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Sung HEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01G4/30, H10B12/00
CPC Code(s): H01L28/65
Abstract: provided are a capacitor, a method of preparing the capacitor, and an electronic device including the capacitor, the capacitor including a lower electrode, an upper electrode spaced apart from the lower electrode, a dielectric between the lower electrode and the upper electrode, a first layer between the lower electrode and the dielectric, and a second layer between the dielectric and the upper electrode, wherein the dielectric comprises tiohaving a rutile phase and is doped with magnesium, the first layer includes a material having a higher work function than that of a material included in the lower electrode, and the second layer includes a dielectric protective material.
Inventor(s): Mun Hyeon Kim of Hwaseong-si (KR) for samsung electronics co., ltd., Kern Rim of Suwon-si (KR) for samsung electronics co., ltd., Dae Won Ha of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L21/8234, H01L29/66, H01L29/78, H01L29/786
CPC Code(s): H01L29/0665
Abstract: a semiconductor device is provided. the semiconductor device includes a substrate, an active pattern extending in a first horizontal direction on the substrate, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the active pattern, a source/drain region on at least one side of the gate electrode, a source/drain contact extending into the source/drain region and including a filling layer and a barrier layer along a sidewall of the filling layer, and a silicide layer between the source/drain region and the filling layer, the silicide layer including a first sidewall in contact with the filling layer and a second sidewall in contact with the source/drain region, wherein the barrier layer is not between the filling layer and the source/drain region.
Inventor(s): Jaejik Baek of Watervliet NY (US) for samsung electronics co., ltd., Seungchan Yun of Waterford NY (US) for samsung electronics co., ltd., Kang-ill Seo of Springfield VA (US) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L21/8238, H01L25/07, H01L27/06, H01L27/092, H01L29/423, H01L29/66, H01L29/775, H01L29/786
CPC Code(s): H01L29/0673
Abstract: provided is a three-dimensionally-stacked field-effect transistor (3dsfet) device including a plurality of 3dsfets on a single substrate, wherein each of the 3dsfet includes: a 1channel structure surrounded by a 1gate structure; and a 2channel structure surrounded by a 2gate structure, the 2channel structure provided on the 1channel structure, and wherein, in at least one of the 3dsfets, the 1gate structure is isolated from the 2gate structure through a barrier layer including a dielectric material comprising tantalum.
Inventor(s): Joonyong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaejoon OH of Suwon-si (KR) for samsung electronics co., ltd., Boram KIM of Suwon-si (KR) for samsung electronics co., ltd., Jongseob KIM of Suwon-si (KR) for samsung electronics co., ltd., Junhyuk PARK of Suwon-si (KR) for samsung electronics co., ltd., Sunkyu HWANG of Suwon-si (KR) for samsung electronics co., ltd., Injun HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/20, H01L29/417, H01L29/66, H01L29/778
CPC Code(s): H01L29/2003
Abstract: a method of manufacturing a semiconductor device according to various example embodiments includes forming a buffer layer and a first semiconductor layer on a substrate, forming a recess by etching the first semiconductor layer, sequentially forming a second semiconductor layer and a third semiconductor layer on the first semiconductor layer in which the recess is formed, and forming a source and a drain respectively in contact with both sides of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.
Inventor(s): Sangmin Kang of Suwon-si (KR) for samsung electronics co., ltd., Sunggil Kim of Suwon-si (KR) for samsung electronics co., ltd., Kyungwook Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/45, H01L23/00, H01L29/417
CPC Code(s): H01L29/456
Abstract: a semiconductor device includes: a first substrate structure including a first substrate, circuit devices, and first bonding pads; and a second substrate structure connected to the first substrate structure. the second substrate structure includes: a source structure; gate electrodes stacked and spaced apart from each other below the source structure in a first direction; first contact plugs electrically connected to the gate electrodes and extending in the first direction; a second contact plug extending in the first direction in an external side of the gate electrodes and electrically connected to the source structure through an upper end; a diffusion barrier between the second contact plug and the source structure, wherein a level of a lower end thereof is higher than a level of an uppermost surface of the gate electrodes; and second bonding pads below the gate electrodes and connected to the first bonding pads.
Inventor(s): Hyohoon BYEON of Suwon-si (KR) for samsung electronics co., ltd., Seokhoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Unki KIM of Suwon-si (KR) for samsung electronics co., ltd., Pankwi PARK of Suwon-si (KR) for samsung electronics co., ltd., Sungkeun LIM of Suwon-si (KR) for samsung electronics co., ltd., Yuyeong JO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/66, H01L21/8234, H01L27/088, H01L29/06, H01L29/08, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L29/66545
Abstract: an integrated circuit device includes: a rear wiring structure; an insulating substrate including fin structures disposed on the rear wiring structure and extending in a first horizontal direction; a device isolation layer disposed between the fin structures; a lower insulating layer covering the fin structures; gate structures extending in a second horizontal direction crossing the first horizontal direction; a plurality of nanosheet stacks disposed on the lower insulating layer; a first source/drain region disposed on the insulating substrate and including a body portion and a vertical extension portion, wherein the body portion is disposed between the plurality of nanosheet stacks, and the vertical extension portion passes through the lower insulating layer and through some of the fin structures; a semiconductor epitaxial structure at least partially surrounding the vertical extension portion of the first source/drain region; and a lower contact connecting the semiconductor epitaxial structure with the rear wiring structure.
20240243205. SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sanghoon Uhm of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/786, H01L23/528, H01L29/423, H10B12/00
CPC Code(s): H01L29/78642
Abstract: a semiconductor device includes a bit line on a substrate, a gate electrode on the bit line, a gate insulation pattern on a sidewall of the gate electrode, a channel that contacts an upper surface of the bit line and a sidewall of the gate insulation pattern, an oxide semiconductor pattern that contacts an upper sidewall of the channel, and a contact plug that contacts an upper surface of the channel and an upper surface of the oxide semiconductor pattern. the channel includes an amorphous oxide semiconductor material. the oxide semiconductor pattern includes a crystalline oxide semiconductor material.
20240243215. SCHOTTKY BARRIER PHOTODETECTOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Chanwook BAIK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L31/108, H01L31/032
CPC Code(s): H01L31/108
Abstract: a photodetector, including: a semiconductor layer, a conductive layer forming a schottky junction with the semiconductor layer, and a tunneling barrier layer between the semiconductor layer and the conductive layer, wherein the tunneling barrier layer may be configured to block a dark current between the semiconductor layer and the conductive layer.
Inventor(s): Kyungsang CHO of Suwon-si (KR) for samsung electronics co., ltd., Chanwook BAIK of Suwon-si (KR) for samsung electronics co., ltd., Yooseong YANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L31/113, H01L31/028, H01L31/18
CPC Code(s): H01L31/1136
Abstract: a light sensing device includes a channel layer, a first electrode provided on a first surface of the channel layer, a second electrode provided on the first surface of the channel layer and spaced apart from the first electrode, and a light absorption layer provided on the channel layer between the first electrode and the second electrode and configured to absorb infrared rays, where the light absorption layer includes a doped semiconductor layer.
Inventor(s): Sunil KIM of Suwon-si (KR) for samsung electronics co., ltd., Junhee CHOI of Suwon-si (KR) for samsung electronics co., ltd., Nakhyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Junghun PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L33/02, G02B5/00, H01L33/24
CPC Code(s): H01L33/025
Abstract: a light-emitting device includes a first semiconductor layer having a first conductive type, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer and having a second conductive type that is electrically opposite to the first conductive type, an insulating film at least partially surrounding the first semiconductor layer, the active layer, and the second semiconductor layer, and a first plurality of photo-conversion particles provided inside the first semiconductor layer.
Inventor(s): Jaehyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Jungsuek OH of Seoul (KR) for samsung electronics co., ltd., Jaehoon KIM of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q3/46, H01Q1/24, H01Q9/04
CPC Code(s): H01Q3/46
Abstract: the present disclosure relates to a 5th generation (5g) or 6th generation (6g) communication system for supporting a data transmission rate higher than that of a 4th generation (4g) communication system such as long term evolution (lte). according to various embodiments, an antenna of a wireless communication system comprises: a first transmission line; a first layer including a plurality of opening parts; a second layer including a plurality of dielectrics; and a third layer in which a plurality of antenna elements corresponding to the plurality of dielectrics is arranged, wherein a first surface of each of the plurality of dielectrics can be arranged to face the first layer, a second surface of each of the plurality of dielectrics, which is opposite to the first surface, can be arranged to face the third layer, and each of the plurality of antenna elements can be arranged to be positioned on the second surface of a corresponding dielectric from among the plurality of dielectrics.
Inventor(s): Eunsung LEE of Suwon-si (KR) for samsung electronics co., ltd., Junhee Choi of Suwon-si (KR) for samsung electronics co., ltd., Kiho Kong of Suwon-si (KR) for samsung electronics co., ltd., Joohun Han of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01S5/323, H01S5/028, H01S5/40
CPC Code(s): H01S5/323
Abstract: provided is a light source including a plurality of support layers spaced apart from each other, an ionic crystalline layer on each of the plurality of support layers, a two-dimensional (2d) material layer on the ionic crystalline layer, and a light-emitting device including a first clad layer on the 2d material layer, a width of the first clad layer being greater than a width of the 2d material layer in a horizontal direction, an active layer on the first clad layer, and a second clad layer on the active layer and doped as a second conductive type electrically opposite to a first conductive type.
Inventor(s): Hyunggwang KANG of Suwon-si (KR) for samsung electronics co., ltd., Hojin JUNG of Suwon-si (KR) for samsung electronics co., ltd., Myunghoon KWAK of Suwon-si (KR) for samsung electronics co., ltd., Junhyuk KIM of Suwon-si (KR) for samsung electronics co., ltd., Hoyoung JEONG of Suwon-si (KR) for samsung electronics co., ltd., Hyoungtak CHO of Suwon-si (KR) for samsung electronics co., ltd., Hyunju HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02P29/00, G01V3/02, H02K7/06, H05K5/02
CPC Code(s): H02P29/0016
Abstract: an electronic device is provided. the electronic device includes a first housing, a second housing coupled to the first housing so as to slide in a first direction and a second direction opposite to the first direction, a flexible display including an exposed region that is exposed on a front surface of the electronic device and varied in size in response to sliding of the second housing, a sensing substrate disposed in the first housing, and a conductive roller disposed in the second housing so as to be rotatable. a plurality of sensing pads are disposed on one surface of the sensing substrate. the conductive roller is configured to make contact with a part of the plurality of sensing pads as the second housing slides relative to the first housing. the plurality of sensing pads include a plurality of position pads that make contact with the conductive roller in a state in which the exposed region of the flexible display is formed in one or more specified sizes.
Inventor(s): Caleb K. Lo of San Jose CA (US) for samsung electronics co., ltd., Gilwon Lee of McKinney TX (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd., Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd.
IPC Code(s): H04B7/06, H04L5/00, H04W8/22
CPC Code(s): H04B7/0626
Abstract: apparatuses and methods for support of toeplitz-based channel state information (csi) feedback/reporting methods. a method performed by a user equipment (ue) includes transmitting capability information indicating a capability of the ue to support a toeplitz-based method of determining channel state information (csi) reports; receiving configuration information that indicates parameters for the toeplitz-based method of determining the csi reports; and receiving csi reference signals (rss). the method further includes measuring the csi-rss; determining, based on the configuration information and the measured csi-rss, a csi report; and transmitting the csi report.
Inventor(s): Kwonjong LEE of Suwon-si (KR) for samsung electronics co., ltd., Gibum KIM of Suwon-si (KR) for samsung electronics co., ltd., Sundo KIM of Suwon-si (KR) for samsung electronics co., ltd., Donghun LEE of Suwon-si (KR) for samsung electronics co., ltd., Sangwon JUNG of Suwon-si (KR) for samsung electronics co., ltd., Jungsoo JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B17/345, H04W24/10, H04W52/52
CPC Code(s): H04B17/345
Abstract: the disclosure relates to a 5th-generation (5g) or 6th-generation (6g) communication system for supporting a higher data transmission rate. a method performed by a first user equipment (ue) in a wireless communication system in which cross-link interference (cli) exists is provided. the method includes receiving, from a base station, control information related to automatic gain control (agc) tuning and cli measurement, receiving, from a second ue, a first signal for the agc tuning based on the control information, controlling an input signal level of an analog-to-digital converter (adc) in the first ue based on the first signal, receiving, from the second ue, a second signal for the cli measurement based on the control information, and transmitting, to the base station, a report message including a cli measurement result measured based on the second signal.
Inventor(s): Youngbum KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeongho YEO of Suwon-si (KR) for samsung electronics co., ltd., Younsun KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok RYU of Suwon-si (KR) for samsung electronics co., ltd., Sungjin PARK of Suwon-si (KR) for samsung electronics co., ltd., Seunghoon CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L1/1812, H04W72/1268, H04W72/1273, H04W72/51, H04W84/06
CPC Code(s): H04L1/1812
Abstract: the present disclosure relates to: a communication technique for merging iot technology with a 5g communication system for supporting a data transmission rate higher than that of a 4g system; and a system therefor. the present disclosure can be applied to an intelligent service (for example, smart homes, smart buildings, smart cities, smart cars or connected cars, health care, digital education, retail businesses, and security- and safety-related services) on the basis of a 5g communication technology and an iot-related technology. the present disclosure provides a method and a device for setting, indicating and operating a harq process id.
Inventor(s): Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd., Sangkyu BAEK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L1/1829, H04W76/28
CPC Code(s): H04L1/1848
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. specifically, the present disclosure provides method and apparatus for handling overlapping between drx duration and harq feedback occasion with respect to nes. the method comprises: receiving, from a base station, configuration information for a network discontinuous reception (nw drx) operation; receiving, from the base station, downlink data based on the nw drx operation; identifying that an occasion for hybrid automatic repeat request (harq) information for the downlink data overlaps with a duration of the nw drx operation; and transmitting, to the base station, the harq information for the downlink data in the occasion overlapping with the duration of the nw drx operation.
Inventor(s): Donghun LEE of Suwon-si (KR) for samsung electronics co., ltd., Seho MYUNG of Suwon-si (KR) for samsung electronics co., ltd., Kwonjong LEE of Suwon-si (KR) for samsung electronics co., ltd., Jungsoo JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L5/00
CPC Code(s): H04L5/0094
Abstract: the present disclosure relates to a 5g communication system or a 6g communication system for supporting higher data rates beyond a 4g communication system such as long term evolution (lte). a method performed by a receiving node in a wireless communication system is provided. the method may include receiving data including a plurality of information bits from a transmitting node, sequentially decoding information bits from a first information bit to a designated information bit among the received plurality of information bits by using a first scheme, and decoding information bits from a second information bit following the designated information bit among the plurality of information bits by using a second scheme that is different from the first scheme.
Inventor(s): Yongseok LEE of Suwon-si (KR) for samsung electronics co., ltd., Sejin KWAK of Suwon-si (KR) for samsung electronics co., ltd., Geunho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L12/28, G06V10/75
CPC Code(s): H04L12/282
Abstract: a method of controlling a plurality of electronic devices according to context of a user is provided. the method includes determining, by a computing device, context of the user, selecting, by the computing device based on the determined context, at least one modality to be considered when controlling the plurality of electronic devices, obtaining, by the computing device for each selected modality, a score map indicating an area affected by input and output of the plurality of electronic devices, calculating, by the computing device, a score for each selected modality by using the obtained score map, and controlling, by the computing device, operations of the plurality of electronic devices based on the calculated score, wherein the score may include a value indicating a degree of optimization of user experience in the determined context.
Inventor(s): Van Bang LE of Bac Ninh (VN) for samsung electronics co., ltd., Anh Tuan LE of Bac Ninh (VN) for samsung electronics co., ltd., Dinh Quan VUONG of Bac Ninh (VN) for samsung electronics co., ltd., Van Thong DUONG of Bac Ninh (VN) for samsung electronics co., ltd.
IPC Code(s): H04L65/1096, H04L65/1069, H04L65/1104
CPC Code(s): H04L65/1096
Abstract: a first electronic device and a method for forwarding a call from a second electronic device are provided. a first electronic device includes a transceiver, memory storing instructions, and one or more processors configured to execute the instructions to receive from a server a first session initiation protocol (sip) invite message generated at the second electronic device, through the transceiver, determine whether to forward the call from the second electronic device, in response to receiving the first sip invite message, upon determining to forward the call from the second electronic device, obtain contact information related to the call forwarding from the second electronic device, generate a response message comprising the contact information related to the call forwarding, and transmit the response message to the server to provide the response message comprising the contact information from the server to the second electronic device through the transceiver, wherein the contact information in the response message transmitted to the server is used by the server to generate a second sip invite message to be transmitted to the third electronic device.
Inventor(s): Jicheol LEE of Suwon-si (KR) for samsung electronics co., ltd., Jungshin PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L67/14, H04L41/0894, H04L41/5051
CPC Code(s): H04L67/14
Abstract: the present disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by a session management function (smf) entity in a wireless communication system, according to various embodiments of the present disclosure, comprises the steps of: receiving a first message comprising a user plane latency (upl) requirement from a policy control function (pcf) entity; and determining whether to perform pdu session anchor (psa) user plane function (upf) relocation, on the basis of the first message.
Inventor(s): Jiyoon JO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N7/035, H04N17/00
CPC Code(s): H04N7/0357
Abstract: provided are an electronic device and an operating method thereof. the operating method of the electronic device configured to communicate with one or more source devices through a high-definition multimedia interface (hdmi) includes identifying a consumer electronics control (cec) error corresponding to one or more source devices based on cec communication status between the electronic device and the one or more source devices, analyzing the identified cec error corresponding to the one or more source devices, and providing a troubleshooting information to a user of the electronic device regarding the identified cec error corresponding to the one or more source devices.
Inventor(s): Minwoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Minsoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Seungsoo JEONG of Suwon-si (KR) for samsung electronics co., ltd., Anish TAMSE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/105, H04N19/159, H04N19/176, H04N19/52, H04N19/80
CPC Code(s): H04N19/105
Abstract: a method of decoding an image according to an embodiment includes: when a size of a current block in the image is equal to or greater than a certain size, determining a candidate list including, as a candidate, a first reference block indicated by a temporal motion vector; when the first reference block is selected from among candidates included in the candidate list, determining motion vectors of sub-blocks in the current block by using motion vectors obtained from the first reference block; and reconstructing the current block based on sample values of a second reference block indicated by the motion vectors of the sub-blocks.
Inventor(s): Seungeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Wonhee LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyungboo JUNG of Suwon-si (KR) for samsung electronics co., ltd., Woosuk CHOI of Suwon-si (KR) for samsung electronics co., ltd., Young Hun SUNG of Suwon-si (KR) for samsung electronics co., ltd., Dokwan OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/13, H04N19/51, H04N19/70, H04N19/91
CPC Code(s): H04N19/13
Abstract: an apparatus with video processing includes: one or more processors configured to: generate a syntax element processable by a target standard codec by inputting a quantization parameter, a pre-decoded reference image, and a plurality of frames comprised in a video to a neural network and compressing the plurality of frames, and generate a bitstream by performing entropy encoding on the syntax element.
Inventor(s): Youngkwon Lim of McKinney TX (US) for samsung electronics co., ltd., Rajan Laxman Joshi of San Diego CA (US) for samsung electronics co., ltd., Madhukar Budagavi of Plano TX (US) for samsung electronics co., ltd.
IPC Code(s): H04N19/17
CPC Code(s): H04N19/17
Abstract: an apparatus comprises a communication interface and a processor operably coupled to the communication interface. the communication interface is configured to receive a compressed bitstream including association information between scene objects and submeshes. the processor is configured to determine an index of a scene object, decode the association information between scene objects and submeshes, determine an identifier of a submesh based on the association information and the index of the scene object, and reconstruct the submesh based on the identifier.
Inventor(s): Seungeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Wonhee LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyungboo JUNG of Suwon-si (KR) for samsung electronics co., ltd., Woosuk CHOI of Suwon-si (KR) for samsung electronics co., ltd., Young Hun SUNG of Suwon-si (KR) for samsung electronics co., ltd., Dokwan OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/91, G06V10/82, H04N19/119, H04N19/159, H04N19/184, H04N19/51, H04N19/70
CPC Code(s): H04N19/91
Abstract: an apparatus with video processing includes one or more processors configured to generate a syntax element processable by a target standard codec by inputting a quantization parameter, a pre-decoded reference image, and a plurality of frames comprised in a video to a neural network and compressing the plurality of frames, and generate a bitstream by performing entropy encoding on the syntax element.
Inventor(s): Jongin LEE of Suwon-si (KR) for samsung electronics co., ltd., Sehyun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N21/443, H04N21/41, H04N21/4363
CPC Code(s): H04N21/4436
Abstract: provided is a display device including: a display, a communication unit comprising communication circuitry, a memory storing one or more instructions, and at least one processor, comprising processing circuitry, configured to execute the one or more instructions to: control the communication unit to transmit image data received from an external device connected to the display device, to another display device connected to the display device, based on receiving a power-off signal, identify whether transmitting the image data to the other display device is being performed, based on transmitting the image data to the other display device being performed, turn off the display and enter a power-off suspend mode in which transmitting the image data to the other display device is maintained, and based on transmitting the image data to the other display device being terminated in the power-off suspend mode, switch to a power saving mode.
Inventor(s): Soongeun Jang of Suwon-si (KR) for samsung electronics co., ltd., Woo-Shik Kim of Suwon-si (KR) for samsung electronics co., ltd., Haim Azaria of Tivo'n (IL) for samsung electronics co., ltd., Gal Bitan of Shoham (IL) for samsung electronics co., ltd., Igal Avishai of Hertzlia (IL) for samsung electronics co., ltd., Lena Grechikhin of Giva'tayim (IL) for samsung electronics co., ltd.
IPC Code(s): H04N23/84, H04N23/16, H04N23/68, H04N23/88
CPC Code(s): H04N23/843
Abstract: provided is an apparatus for obtaining an image includes an image sensor and a signal processing unit that includes a demosaicing unit configured to reconstruct a green signal to have a full pixel resolution by using the input image, a sharpening filter unit configured to generate a first image by sharpening the reconstructed green signal for each preset direction, a direction image generation unit which generates a second image by removing a base band and extracting only a detail band, a gray detection unit configured to detect a gray region of the white balance-processed input image, an edge detection unit configured to detect an edge direction of the white balance-processed input image, and a selection unit configured to generate a third image by blending the first image and the second image, based on the detected gray region and the detected edge direction.
Inventor(s): Junho LEE of Suwon-si (KR) for samsung electronics co., ltd., Sookyoung ROH of Suwon-si (KR) for samsung electronics co., ltd., Sangyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyunsung PARK of Suwon-si (KR) for samsung electronics co., ltd., Seokho YUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/13, G02B5/20, G02B27/10, G02B27/12, H01L27/146
CPC Code(s): H04N25/134
Abstract: an image sensor includes a sensor substrate including a plurality of unit pixels; a plurality of unit color filters on the sensor substrate, each unit color filter of the plurality of unit color filters including a plurality of nanoposts; a color separating lens array on the plurality of unit color filters, the color separating lens array being configured to separate and condense incident light based on a wavelength of the incident light; and a spacer layer between the sensor substrate and the color separating lens array, wherein at least one of a diameter and a height of the plurality of nanoposts provided in each unit color filter of the plurality of unit color filters in regions are different from each other based on values of a chief ray angle (cra) corresponding to the regions.
Inventor(s): Seokho YUN of Suwon-si (KR) for samsung electronics co., ltd., Sookyoung Roh of Suwon-si (KR) for samsung electronics co., ltd., Choonlae Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/13, G02B27/10, G02B27/12, H04N25/77
CPC Code(s): H04N25/135
Abstract: an image sensor includes: a sensor substrate including a first pixel and a second pixel that are each configured to sense light of a first wavelength, and a third pixel and a fourth pixel that are each configured to sense light of a second wavelength; and a color separating lens array (csla) provided on the sensor substrate, the csla being configured to separate incident light according to wavelength and condense the separated incident light onto the first pixel, the second pixel, the third pixel, and the fourth pixel. the first pixel, the second pixel, the third pixel, and the fourth pixel are provided in a 2�2 arrangement. the light of the first wavelength and the light of the second wavelength have a complementary color relationship.
Inventor(s): Seungwon CHOI of Hwaseong-si (KR) for samsung electronics co., ltd., Ildo KIM of Suwon-si (KR) for samsung electronics co., ltd., Jongseong CHOI of Hwaseong-si (KR) for samsung electronics co., ltd., Ji Hwan PARK of Suwon-si (KR) for samsung electronics co., ltd., Ser Hoon LEE of Yongin-si (KR) for samsung electronics co., ltd., Sukhwan LIM of Seongnam-si (KR) for samsung electronics co., ltd., Kyuyul CHOI of Yongin-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/46, G06T5/50, H04N25/75
CPC Code(s): H04N25/46
Abstract: provided are image signal processing apparatuses and methods for operating the same. in an embodiment, the image signal processing apparatus is configured to receive, from an image sensor device, an input image. the apparatus is further configured to perform a binning and crop operation on the input image to generate a first image. the apparatus is further configured to perform a bayer domain processing on the first image to generate a second image. the apparatus is further configured to perform rgb domain processing on the second image to generate a third image. the apparatus is further configured to perform yuv domain processing on the third image to generate an output image. the yuv domain processing comprises at least one of a spatial de-noising operation, a temporal de-noising operation, a motion compensation operation, a tone mapping operation, a detail enhance operation, and a sharpening operation.
Inventor(s): Hyunjong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/51, H04N23/71, H04N25/57, H04N25/772
CPC Code(s): H04N25/51
Abstract: an image sensor includes a pixel configured to output a pixel signal through a column line, a ramp signal generator configured to generate a reference ramp signal having a level which decreases based on a desired slope, a first gain circuit configured to receive the reference ramp signal, and generate a first ramp signal based on the reference ramp signal, the first ramp signal having a different slope than the reference ramp signal, a second gain circuit configured to receive the reference ramp signal, and generate a second ramp signal based on the reference ramp signal, the second ramp signal having a different slope than the first ramp signal, a first comparator configured to generate a first comparison signal based on the first ramp signal and the pixel signal, and a second comparator configured to generate a second comparison signal based on the second ramp signal and the pixel signal.
Inventor(s): Chanmin PARK of Suwon-si (KR) for samsung electronics co., ltd., Seonghyeon PARK of Suwon-si (KR) for samsung electronics co., ltd., Kyunghoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Moo Young KIM of Suwon-si (KR) for samsung electronics co., ltd., Sunjung KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/60, H04N25/77, H04N25/78
CPC Code(s): H04N25/60
Abstract: an image sensor includes a pixel array including a plurality of pixels; a ramp signal generator configured to generate a ramp signal; a plurality of first attenuators with each first attenuator connected to a respective column of the plurality of pixels, and each first attenuator configured to receive a pixel signal from a respective pixel belonging to a selected row; a plurality of second attenuators with each second attenuator corresponding to a respective column, and each second attenuator configured to receive the ramp signal from the ramp signal generator; and a plurality of analog-to-digital converters configured to output digital signals by comparing first signals output from the plurality of first attenuators and second signals output from the plurality of second attenuators, in which each of the plurality of first attenuators and each of the plurality of second attenuators comprises a first capacitor and a second capacitor.
Inventor(s): JAEKYU LEE of Suwon-si (KR) for samsung electronics co., ltd., KYOUNG CHO NA of Suwon-si (KR) for samsung electronics co., ltd., DONGSEOK CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/78, H04N25/772
CPC Code(s): H04N25/78
Abstract: disclosed is an image sensor. each of a plurality of pixels includes a photo diode, a transfer transistor connected between the photo diode and a floating diffusion node, a reset transistor connected between the floating diffusion node and a first power node to which a first power supply voltage is applied, a first source follower transistor including a gate connected to the floating diffusion node, a first terminal connected to a second power node to which a second power supply voltage is applied, and a second terminal connected to a first node, a precharge transistor connected between the first node and a floating node, a first precharge select transistor connected between the floating node and a ground node, a second precharge select transistor connected between the first node and a second node, and a first capacitor connected between a gate of the precharge transistor and the floating node.
Inventor(s): Myoungsung SIM of Suwon-si (KR) for samsung electronics co., ltd., Hunki LEE of Suwon-si (KR) for samsung electronics co., ltd., Woojin CHO of Suwon-si (KR) for samsung electronics co., ltd., Kiwon KIM of Suwon-si (KR) for samsung electronics co., ltd., Choonghyo PARK of Suwon-si (KR) for samsung electronics co., ltd., Seongkwan YANG of Suwon-si (KR) for samsung electronics co., ltd., Byounghee LEE of Suwon-si (KR) for samsung electronics co., ltd., Hochul HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04R1/02, H04N23/51
CPC Code(s): H04R1/025
Abstract: an electronic device is provided. the electronic device includes a housing, a camera perpendicular to a first edge of the electronic device, disposed inside the housing, a speaker disposed on one side of the camera inside the housing, a receiver disposed on another side of the camera inside the housing, and a structure disposed between the first edge and the camera inside the housing. the housing includes a first opening formed on the front surface, and a plurality of second openings formed on a side surface. the structure may shield some of the plurality of second openings such that a first sound output from the speaker is output to other second openings or at least one of the first openings, and a second sound output from the receiver is output to the first opening.
20240244386. VIDEO-DERIVED AUDIO PROCESSING_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sunil Bharitkar of Stevenson Ranch CA (US) for samsung electronics co., ltd., SeongNam Oh of Irvine CA (US) for samsung electronics co., ltd., Carlos Tejeda Ocampo of Tuxtla Gutiérrez (MX) for samsung electronics co., ltd.
IPC Code(s): H04S7/00, G06V20/40, G11B27/036
CPC Code(s): H04S7/30
Abstract: one embodiment provides a computer-implemented method that includes creating, during content production, an audio object and metadata associated with the audio object based on a motion vector analysis of an object in one or more image frames in a video. the method can include, during the content production, inserting the audio object and the metadata associated with the audio object into at least one of an audio encoder or a video encoder. the method can include, during content playback, rendering the audio object, without image frame analysis, based on decoding the audio object and parsing the metadata associated with the audio object.
Inventor(s): Hongjin CHOI of Suwon-si (KR) for samsung electronics co., ltd., Junhyun PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W12/0431, H04W12/06, H04W48/16
CPC Code(s): H04W12/0431
Abstract: the disclosure relates to a fifth generation (5g) or sixth generation (6g) communication system for supporting a higher data transmission rate. a method performed by a user equipment (ue) in a communication system is provided. the method includes receiving, from an access and mobility management function (amf), a non-access stratum (nas) security mode command message including information on a public key of an authentication and key management for applications (akma) anchor function (aanf), encrypting, based on the public key, a combination of an akma temporary identifier (a-tid) and an application function identifier (af_id) of an application function (af), and transmitting, to the af, an application session establishment request including information on the encrypted combination of the a-tid and the af_id.
Inventor(s): Mehrdad SHARIAT of Staines (GB) for samsung electronics co., ltd., Chadi KHIRALLAH of Staines (GB) for samsung electronics co., ltd., David Gutierrez ESTEVEZ of Staines (GB) for samsung electronics co., ltd.
IPC Code(s): H04W24/10, H04W4/02, H04W24/02
CPC Code(s): H04W24/10
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by a first network entity in a mobile communication system for providing information relating to the relative proximity of one or more user equipments (ues) is provided. the method includes receiving, from a second network entity, a request for network analytics; receiving, from one or more third network entities, input data relating to the ues; generating analytics based on the input data; and providing the generated analytics to the second network entity as a response to the request. the request comprises an analytics identifier (id) indicating relative proximity information.
Inventor(s): Jeongho Jeon of San Jose CA (US) for samsung electronics co., ltd., Aristides Papasakellariou of Houston TX (US) for samsung electronics co., ltd., Hongbo Si of Allen TX (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W24/10, H04L5/00, H04W52/32
CPC Code(s): H04W24/10
Abstract: a method for a user equipment (ue) is provided. the method includes receiving first information related to reception of reference signals (rss). the rss include channel state information rss (csi-rs) or synchronization signals. the rss are associated with a beam failure (bf) detection, a radio link failure (rlf) detection, or a csi report. the method further includes receiving second information related to hypothetical adaptation of transmission powers of the rss and the rss based on the first information. the method further includes determining, based on the second information and the reception of the rss, reporting quantities indicating hypothetical channel conditions and transmitting a channel with the reporting quantities indicating the hypothetical channel conditions.
Inventor(s): Jicheol LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Hyesung KIM of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W28/02, H04W48/16
CPC Code(s): H04W28/0273
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by a first smf entity of a first network in a wireless communication system according to the disclosure includes receiving, from an amf entity, an sm context creation request message including an id of a second smf of a second network, hr-sbo allowance information, and pdu session creation information; and selecting an easdf entity or a plurality of candidate easdf entities of a first network based on the sm context creation request message.
Inventor(s): Nishant Nishant of Bangalore (IN) for samsung electronics co., ltd., Amit Anandrao DANGE of Bangalore (IN) for samsung electronics co., ltd., Aman AGARWAL of Bangalore (IN) for samsung electronics co., ltd., Kailash Kumar JHA of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W36/00, H04W36/30
CPC Code(s): H04W36/0069
Abstract: an example provides a method for selecting a cell by a user equipment (ue) in a wireless communication system, and the method may include receiving first configuration information for early measurement to be performed while the ue is in an idle state or an inactive state. the method may include identifying, based on the first configuration information, a plurality of candidate cells for the early measurement among neighboring cells of the ue. the method may include receiving, from each candidate cell of the plurality of candidate cells, second configuration information including at least one of bandwidth support information, high power user equipment (hpue) support information or relaxed measurement support information. and the method may include selecting a cell by prioritizing the plurality of candidate cells, based on a signal strength of said each candidate cell and the second configuration information.
Inventor(s): Lalith KUMAR of Bangalore (IN) for samsung electronics co., ltd., Hoyeon LEE of Suwon-si (KR) for samsung electronics co., ltd., Arijit SEN of Bangalore (IN) for samsung electronics co., ltd., Koustav ROY of Bangalore (IN) for samsung electronics co., ltd., Varini GUPTA of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W40/02, H04L45/302, H04W40/24, H04W76/10
CPC Code(s): H04W40/02
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. embodiments herein provide a method for selecting route selection descriptor in network () by a ce (). the method includes receiving a ursp rule configuration from hplmn apparatus (). the ursp rule configuration includes a route selection criteria in a block. the block can be, for example, but not limited to a ursp information block of the ursp rule configuration, a traffic descriptor block of the ursp rule configuration, a route selection descriptor block of the ursp rule configuration, and a route validation criteria block of the ursp rule configuration. further, the method includes detecting an initiation of an application in the ue. further, the method includes determining that the ursp rule configuration is applicable to the application. further, the method includes selecting the route selection descriptor included in the ursp rule configuration in response to determining that the ursp rule configuration is applicable to the application.
Inventor(s): Ashok Kumar NAYAK of Bangalore (IN) for samsung electronics co., ltd., Varini GUPTA of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W48/06, H04W48/18, H04W60/00
CPC Code(s): H04W48/06
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. embodiments herein provide a method for nsac based on availability of a quota at a nsacf apparatus in a wireless network. the method includes registering, by an amf apparatus or a smf apparatus, a plurality of ues to at least one network slice requiring admission control; detecting, by amf apparatus or smf apparatus, enablement of a configuration to perform the admission control on an already deployed existing slice based on availability of the quota at nsacf apparatus in the wireless network; sending, by amf apparatus, a number of ues per slice update request message to nsacf apparatus to increase a count of the quota for the already registered ues.
Inventor(s): Youngkyo BAEK of Suwon-si (KR) for samsung electronics co., ltd., Kisuk KWEON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W48/08, H04W60/00
CPC Code(s): H04W48/08
Abstract: the present disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method of an amf entity of the present disclosure comprises the steps of: receiving a registration request message for network registration from a ue moved from a first network that is an snpn to a second network, wherein the registration request message includes temporary id information of the ue and network id (nid) information of the first network to which the temporary id information is allocated; identifying a first amf entity belonging to the first network on the basis of the temporary id information and the nid information; transmitting, to the first amf entity, a request message for requesting context information of the ue; and receiving a response message including the context information from the first amf entity.
Inventor(s): Kisuk KWEON of Suwon-si (KR) for samsung electronics co., ltd., Sangsoo JEONG of Suwon-si (KR) for samsung electronics co., ltd., Sangjun MOON of Suwon-si (KR) for samsung electronics co., ltd., Jungshin PARK of Suwon-si (KR) for samsung electronics co., ltd., Youngkyo BAEK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W48/18, H04W8/00, H04W8/20, H04W12/06, H04W76/11
CPC Code(s): H04W48/18
Abstract: a method and apparatus for discovering and selecting a network that provides connectivity for transmitting user subscription data is provided. a user equipment (ue) in a wireless communication system includes a transceiver and at least one processor configured to identify preconfigured first information comprising a first list, the first list comprising at least one identifier (id) of at least one network group providing an initial access to a non-public network (npn), receive, from at least one base station via the transceiver, second information comprising at least one second list, the at least one second list comprising at least one id of at least one network group which is supported by the at least one base station and provides an initial access to the npn, and select a network to be initially accessed from a network group corresponding to at least one id included in the first list and the at least one second list, based on the first information and the second information.
Inventor(s): Junyung YI of Suwon-si (KR) for samsung electronics co., ltd., Youngbum KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok RYU of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W52/02
CPC Code(s): H04W52/0206
Abstract: a method performed by a base station in a wireless communication system is provided. the method includes receiving first configuration information related to an energy saving of at least one ambient base station from the at least one ambient base station, configuring the energy saving of the base station based on the first configuration information, and transmitting second configuration information related to the energy saving of the base station from the at least one ambient base station.
Inventor(s): Jinyong LEE of Suwon-si (KR) for samsung electronics co., ltd., Jungwoon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W56/00
CPC Code(s): H04W56/001
Abstract: a method of detecting synchronization timing and sub-band, includes: receiving an input signal corresponding to a training sequence; generating a template signal based on the input signal and a single reference signal; performing a matched filtering operation on the input signal based on the template signal; obtaining an adaptive threshold for detecting a target sub-band based on a result of the matched filtering operation; obtaining a peak tone for the target sub-band based on the result of the matched filtering operation; and determining whether the input signal corresponds to the target sub-band and a synchronization timing for the input signal based on the adaptive threshold and the peak tone.
20240244562. MESH-BASED POSITIONING_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Emad Nader Farag of Flanders NJ (US) for samsung electronics co., ltd.
IPC Code(s): H04W64/00, H04L5/00
CPC Code(s): H04W64/00
Abstract: methods and apparatuses for mesh-based positioning operations in a wireless communication system. a method of operating a user equipment (ue) includes receiving first sidelink (sl) positioning reference signals (prss) from m1 ues, respectively, where m1>=2; determining positioning metrics based on the first sl prss; determining a first report; and transmitting the first report to a third ue or one of the m1 ues. the first report includes the positioning metrics corresponding to m2 ues, respectively, from the m1 ues; time-stamps associated with the positioning metrics, respectively; and identities (ids) of the m2 ues, respectively.
Inventor(s): Jinmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Jungwoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Sunghwan HYUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/0453, H04W72/542
CPC Code(s): H04W72/0453
Abstract: a method of wireless communication includes dividing a signal received through an antenna into a plurality of sub-band signals, selecting candidate sub-band signals from among the plurality of sub-band signals, the candidate sub-band signals having a correlation value exceeding a first threshold value, and acquiring preamble information of a physical layer protocol data unit (ppdu) based on a subset of the candidate sub-band signals having a signal-to-noise ratio (snr) value higher than an snr threshold value, the snr threshold value being obtained by subtracting a difference value from a maximum snr value.
Inventor(s): Aris Papasakellariou of Houston TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W74/08
CPC Code(s): H04W74/08
Abstract: apparatuses and methods for latency reduction for transmission of data. a method performed by a user equipment (ue) includes receiving, by radio resource control signaling, first information for a configured grant (cg) configuration for transmission of physical uplink shared channels (puschs), wherein the first information includes a time period; determining first transmission occasions (tos), from a first set of tos within the time period, for transmission of respective first cg-puschs; and determining first control information providing an indication of the first tos. the method further includes multiplexing the first control information in a first cg-pusch from the first cg-puschs, and second control information in a pusch other than the first cg-pusch, and transmitting the first cg-pusch and the pusch. the second control information provides first acknowledgement information or channel state information. the transmission of the first cg-pusch overlaps in time with the transmission of the pusch.
Inventor(s): Davinder Pal Singh of Coquitlam (CA) for samsung electronics co., ltd., Surhud Khare of Burnaby (CA) for samsung electronics co., ltd.
IPC Code(s): H04W76/10, H04W28/02
CPC Code(s): H04W76/10
Abstract: in one embodiment, a method by a first edge device includes joining a wireless peer-to-peer network, where the first edge device is not connected to an access point of a wireless infrastructure network, where the wireless infrastructure network comprises a number of access points, collecting network data associated with the first edge device, receiving network data associated with one or more second edge devices from the one or more second edge devices through the wireless peer-to-peer network, selecting a first access point among the number of access points to connect based on the network data collected by the first edge device and the network data received from the one or more second edge devices, and sending a connection establishment request to the first access point.
Inventor(s): Hamid Saber of San Diego CA (US) for samsung electronics co., ltd., Jung Hyun Bae of San Diego CA (US) for samsung electronics co., ltd.
IPC Code(s): H04W76/19, H04L5/00, H04W72/21
CPC Code(s): H04W76/19
Abstract: a method of implementing beam failure recovery for a multi-transmission-and-reception-point (m-trp) transmission including a first transmission from a first trp and a second transmission from a second trp may include: receiving a first set of reference signals (rss) corresponding to the first trp and a second set of rss corresponding to the second trp; determining that the first set of rss indicates a beam failure instance (bfi) specific to the first trp, and responsively updating a first bfi counter specific to the first trp; determining that a beam failure with respect to the first trp has occurred based on a count of the first bfi counter equaling or surpassing a first bfi counter threshold; and performing a bfr process for the first trp responsive to determining that the beam failure with respect to the first trp has occurred.
Inventor(s): Jinho CHOI of Suwon-si (KR) for samsung electronics co., ltd., Sunhyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung CHA of Suwon-si (KR) for samsung electronics co., ltd., Dongmyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Sunwoo CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/25, H04L5/00, H04W36/00, H04W60/04
CPC Code(s): H04W76/25
Abstract: the disclosure relates to a 5th generation (5g) communication system or a 6th generation (6g) communication system for supporting higher data rates beyond a 4th generation (4g) communication system such as long term evolution (lte). a method performed by a user equipment in a wireless communication system is provided. the method includes generating a first non-access stratum (nas) message including address information of the user equipment, address information of a network function (nf) entity, and name information of a service requested by the user equipment from the nf entity, transmitting the first nas message to the nf entity via a base station, receiving a second nas message in response to the first nas message, from the nf entity via the base station, and the address information of the user equipment wherein the address information of the nf entity are configured by a radio resource control (rrc) message received from the base station.
Inventor(s): Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd., Sangkyu BAEK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/28
CPC Code(s): H04W76/28
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by a user equipment (ue) in a wireless communication system is provided. the method includes receiving, from a base station, configuration information on a network discontinuous transmission (dtx) associated with a transmit/receive point (trp), receiving, from the base station, a first message for activating the network dtx, and stopping a physical downlink control channel (pdcch) monitoring for the trp based on the configuration information.
Inventor(s): Peshal Nayak of Plano TX (US) for samsung electronics co., ltd., Boon Loong Ng of Plano TX (US) for samsung electronics co., ltd., Rubayet Shafin of Allen TX (US) for samsung electronics co., ltd., Vishnu Vardhan Ratnam of Plano TX (US) for samsung electronics co., ltd., Yue Qi of Plano TX (US) for samsung electronics co., ltd., Elliot Jen of Taipei City (TW) for samsung electronics co., ltd.
IPC Code(s): H04W76/50
CPC Code(s): H04W76/50
Abstract: a wireless communication network includes an assistance-seeking access point (ap) that needs assistance in providing emergency preparedness communication services (epcs) operation. an assisting ap is epcs enabled ap and provides support to the assistance-seeking ap. the assisting ap is coupled to a subscription service provider network (sspn) interface, the assistance-seeking ap may search for an assisting ap in its vicinity. the assisting ap may be a mobile ap.
Inventor(s): Bongjin LEE of Suwon-si (KR) for samsung electronics co., ltd., June JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05B45/325, H05B45/28, H05B45/37, H05B45/395
CPC Code(s): H05B45/325
Abstract: a light-emitting diode (led) control unit includes: a pulse generator configured to generate a pulse signal; a t-filter configured to convert the pulse signal into a triangular wave signal; a first gate driver configured to receive the triangular wave signal and output a first gate control signal; a second gate driver configured to receive the first gate control signal and output a second gate control signal; a first switch configured to turn on a first led string corresponding to a first color temperature based on the first gate control signal; a second switch configured to turn on a second led string corresponding to a second color temperature based on the second gate control signal; and a power supply circuit configured to supply a power supply voltage to the pulse generator, the first gate driver, and the second gate driver by stepping down an operating voltage of the led driver.
Inventor(s): Jinhwan JEON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K1/11, H05K1/14
CPC Code(s): H05K1/111
Abstract: the disclosure relates to a printed circuit board (pcb) module and an electronic apparatus comprising same. a pcb module is provided. the pcb includes a board including a first surface facing a first direction and having formed thereon a first pad for electrical connection with the board, and a second surface facing a second direction opposite to the first direction and having formed thereon the first pad for electrical connection with the board and a second pad for bonding a shielding member thereto, and at least one component disposed on the second surface, wherein the pcb module may be configured to bonded to an adjacent board by using the first pad formed on the first surface or the second surface.
20240244777. DISPLAY APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Daesu CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jisu Kim of Suwon-si (KR) for samsung electronics co., ltd., Hunsung Kim of Suwon-si (KR) for samsung electronics co., ltd., Sangbong Jeon of Suwon-si (KR) for samsung electronics co., ltd., Hyunyong Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K5/02
CPC Code(s): H05K5/0247
Abstract: a display apparatus includes: a display panel; a housing provided to receive the display panel and comprising a rear cover; a rotation device coupled to a rear side of the rear cover and configured to rotate the housing; a cable provided on the rear side of the rear cover and configured to be connected to a first electrical component in the housing; a first guide holder configured to be detachable from the rear side of the rear cover and to guide and hold the cable, and a second guide holder fixed to the rotation device and configured to guide and hold the cable.
20240244823. SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Gaeun Choi of Suwon-si (KR) for samsung electronics co., ltd., Wooyoung Choi of Suwon-si (KR) for samsung electronics co., ltd., Chansic Yoon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/315
Abstract: a semiconductor device includes: an active pattern on a substrate; a gate structure in an upper portion of the active pattern; a bit line structure on the active pattern; a spacer structure on a sidewall of the bit line structure, the spacer structure including an insulating material; and a lower contact plug on a portion of the active pattern adjacent to the bit line structure, the lower contact plug contacting the spacer structure, wherein the spacer structure includes a layer having at least two curves and a vertex disposed between and contacting the two curves.
20240244825. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): YIRANG LIM of SUWON-SI (KR) for samsung electronics co., ltd., JINSU LEE of SUWON-SI (KR) for samsung electronics co., ltd., JUNGWOO KANG of SUWON-SI (KR) for samsung electronics co., ltd., JUNRAK CHOI of SUWON-SI (KR) for samsung electronics co., ltd., YAEJIN HONG of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/315
Abstract: a semiconductor device includes a conductive pattern, and a capacitor electrically connected to the conductive pattern. the capacitor includes a first electrode structure electrically connected to the conductive pattern, a dielectric layer disposed on the first electrode structure, a second electrode structure disposed on the dielectric layer, and a plate electrode disposed on the second electrode structure. the second electrode structure includes a first electrode material layer including a first metal element and a nitrogen element, and a first protective material layer including a second metal element, a group 14 element, and an oxygen element.
20240244830. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yoojin Jeong of Suwon-si (KR) for samsung electronics co., ltd., Junghwan Huh of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/34
Abstract: a semiconductor device includes a substrate having an active region defined by an isolation layer, a word line crossing the active region and extending, within the substrate, in a first horizontal direction inside a word line trench, the word line trench being formed in the substrate and including a first sub word line trench and a second sub word line trench. a width, in the first horizontal direction, of a lower surface of the first sub word line trench is greater than a width, in the first horizontal direction, of a lower surface of the second sub word line trench, and a first distance between the lower surface of the first sub word line trench and an upper surface of the active region is less than a second distance between the lower surface of the second sub word line trench and the upper surface of the active region.
Inventor(s): Younggeun SONG of Suwon-si (KR) for samsung electronics co., ltd., Sanghoon UHM of Suwon-si (KR) for samsung electronics co., ltd., Yongjin LEE of Suwon-si (KR) for samsung electronics co., ltd., Min Hee CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/482
Abstract: a semiconductor device includes a bit line extending in a first direction on a substrate. a first insulating pattern is disposed on the bit line. a channel pattern is disposed on an upper side of the bit line and a lateral side of the first insulating pattern. the channel pattern includes an oxide semiconductor material. a gate insulating pattern is disposed on the channel pattern. word lines are disposed on the gate insulating pattern. a second insulating pattern is disposed on the word lines. a landing pad is disposed on the channel pattern. an interlayer insulating layer disposed between the bit line and the channel pattern.
20240244832. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kiseok Lee of Suwon-si (KR) for samsung electronics co., ltd., Keunnam Kim of Suwon-si (KR) for samsung electronics co., ltd., Hui-Jung Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/488
Abstract: a semiconductor device including: a device isolation part on a substrate to define first to fourth active regions, the device isolation part interposed between the first and second active regions and the third and fourth active regions; first and second word lines crossing the first and second active regions and adjacent to each other; a first impurity region in the first active region between the first and second word lines; a second impurity region in the first active region at one side of the first word line and spaced apart from the first impurity region; a first conductive pad contacting the first impurity region; a second conductive pad contacting the second impurity region; a bit line on the first conductive pad; a storage node contact on the second conductive pad; and a landing pad on the storage node contact.
20240244835. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Taiuk RIM of Suwon-si (KR) for samsung electronics co., ltd., Jinseong LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyosuk CHAE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/50
Abstract: a semiconductor device may include a substrate including a cell region and a peripheral circuit region, a first gate structure in the cell region of the substrate, the first gate structure extending in a first direction parallel to an upper surface of the substrate, bit line structures on the cell region of the substrate, the bit line structures extending in a second direction perpendicular to the first direction and parallel to the upper surface of the substrate, a second gate structure on the peripheral circuit region of the substrate, contact plug structures between the bit line structures, the contact plug structures contacting the substrate, first conductive structures on peripheral circuit region of the substrate, the first conductive structures being electrically connected to the peripheral circuit region of the substrate, a first upper insulation structure between the first conductive structures, the first upper insulation structure including a first upper insulation pattern and a hydrogen diffusing insulation pattern surrounding a bottom and sidewalls of the first upper insulation pattern, and a second upper insulation pattern between upper portions of the contact plug structures.
Inventor(s): Seung Hyun CHO of Seoul (KR) for samsung electronics co., ltd., Kwang Ho LEE of Hwaseong-si (KR) for samsung electronics co., ltd., Ji Hwan YU of Suwon-si (KR) for samsung electronics co., ltd., Jong Soo KIM of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H01L21/768, H01L23/522, H01L23/528, H10B43/10, H10B43/35
CPC Code(s): H10B43/27
Abstract: a semiconductor device includes a plurality of blocks on a substrate. trenches are disposed between the plurality of blocks. conductive patterns are formed inside the trenches. a lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.
Inventor(s): Wonjun PARK of Suwon-si (KR) for samsung electronics co., ltd., Byongju KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaemin JUNG of Suwon-si (KR) for samsung electronics co., ltd., Kwangmin PARK of Suwon-si (KR) for samsung electronics co., ltd., Donghwa LEE of Suwon-si (KR) for samsung electronics co., ltd., Dongsung CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/35, H10B41/27, H10B41/35, H10B41/40, H10B43/27, H10B43/40
CPC Code(s): H10B43/35
Abstract: a semiconductor device includes a substrate; a stack structure including an interlayer insulating layer and a gate electrode which are alternately stacked on the substrate; a channel layer extending in a direction crossing the substrate through the stack structure; and a gate dielectric layer between the gate electrode and the channel layer, the gate dielectric layer including a tunneling layer, a charge storage layer, and a blocking layer sequentially on the channel layer, wherein the tunneling layer includes a carbon-containing layer including carbon, and the tunneling layer is positioned closer to the channel layer than it is to the charge storage layer.
20240244847. SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): KYUNGHWAN LEE of Suwon-si (KR) for samsung electronics co., ltd., YONGSEOK KIM of Suwon-si (KR) for samsung electronics co., ltd., JEON IL LEE of Suwon-Si (KR) for samsung electronics co., ltd., DAEWON HA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B51/20, H01L21/28, H01L23/528, H01L29/51, H01L29/78, H10B51/10
CPC Code(s): H10B51/20
Abstract: a semiconductor device may include first stacks and second stacks, which are alternately disposed on a substrate in a first direction parallel to a top surface of the substrate, and first pads and second pads connecting the first stacks to the second stacks. each of the first and second stacks may include a gate electrode, channel patterns, which enclose a side surface of the gate electrode and are spaced apart from each other, and first and second conductive lines connected to a corresponding channel pattern. the first and second conductive lines of the second stack may be disposed to be adjacent to the first and second conductive lines, respectively, of the first stack. the first and second pads may be connected to the first and second conductive lines, respectively, of the first and second stacks.
Inventor(s): Hyunjae LEE of Suwon-si (KR) for samsung electronics co., ltd., Jinseong HEO of Suwon-si (KR) for samsung electronics co., ltd., Seunggeol NAM of Suwon-si (KR) for samsung electronics co., ltd., Yunseong LEE of Suwon-si (KR) for samsung electronics co., ltd., Dukhyun CHOE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B51/30, H10B51/20
CPC Code(s): H10B51/30
Abstract: provided is a semiconductor device including a ferroelectric layer. the semiconductor device includes a channel layer including an n-type oxide semiconductor layer and a p-type oxide semiconductor layer, a ferroelectric layer disposed on the channel layer, a gate electrode disposed on the ferroelectric layer, and a reduced layer disposed on the channel layer and including an element having greater reducing power than a metal included in the channel layer.
Inventor(s): Hyejin Bae of Suwon-si (KR) for samsung electronics co., ltd., Sangho Park of Suwon-si (KR) for samsung electronics co., ltd., Hwang Suk Kim of Suwon-si (KR) for samsung electronics co., ltd., Minsik Min of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Hyesung Choi of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Hosuk Kang of Suwon-si (KR) for samsung electronics co., ltd., Jong Soo Kim of Suwon-si (KR) for samsung electronics co., ltd., Joonghyuk Kim of Suwon-si (KR) for samsung electronics co., ltd., Youngmok Son of Suwon-si (KR) for samsung electronics co., ltd., Joonghee Won of Suwon-si (KR) for samsung electronics co., ltd., Daun Jeong of Hwaseong-si (KR) for samsung electronics co., ltd., Yongsik Jung of Suwon-si (KR) for samsung electronics co., ltd., Jun Chwae of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K50/11, C07F15/00, H10K50/15, H10K50/16, H10K85/30
CPC Code(s): H10K50/11
Abstract: an organometallic compound represented by formula 1:
Inventor(s): Hyejin Bae of Suwon-si (KR) for samsung electronics co., ltd., Sangho Park of Suwon-si (KR) for samsung electronics co., ltd., Hwang Suk Kim of Suwon-si (KR) for samsung electronics co., ltd., Minsik Min of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Hyesung Choi of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Hosuk Kang of Suwon-si (KR) for samsung electronics co., ltd., Jong Soo Kim of Suwon-si (KR) for samsung electronics co., ltd., Joonghyuk Kim of Suwon-si (KR) for samsung electronics co., ltd., Youngmok Son of Suwon-si (KR) for samsung electronics co., ltd., Joonghee Won of Suwon-si (KR) for samsung electronics co., ltd., Daun Jeong of Hwaseong-si (KR) for samsung electronics co., ltd., Yongsik Jung of Suwon-si (KR) for samsung electronics co., ltd., Jun Chwae of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K50/11, C07F15/00, H10K50/15, H10K50/16, H10K85/30
CPC Code(s): H10K50/11
Abstract:
Inventor(s): Hyejin Bae of Suwon-si (KR) for samsung electronics co., ltd., Sangho Park of Suwon-si (KR) for samsung electronics co., ltd., Hwang Suk Kim of Suwon-si (KR) for samsung electronics co., ltd., Minsik Min of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Hyesung Choi of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Hosuk Kang of Suwon-si (KR) for samsung electronics co., ltd., Jong Soo Kim of Suwon-si (KR) for samsung electronics co., ltd., Joonghyuk Kim of Suwon-si (KR) for samsung electronics co., ltd., Youngmok Son of Suwon-si (KR) for samsung electronics co., ltd., Joonghee Won of Suwon-si (KR) for samsung electronics co., ltd., Daun Jeong of Hwaseong-si (KR) for samsung electronics co., ltd., Yongsik Jung of Suwon-si (KR) for samsung electronics co., ltd., Jun Chwae of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K50/11, C07F15/00, H10K50/15, H10K50/16, H10K85/30
CPC Code(s): H10K50/11
Abstract: wherein, mis a transition metal; xis n or c(r); xis n or c(r); xis n or c(r); xis n or c(r); xis n or c(r); at least one of xand xis n; yto yare each independently c or n; ato aare each independently a chemical bond, o, or s; ring cyand ring cyare each independently a c-ccarbocyclic group or a c-cheterocyclic group; a1, a2, and a3 are each independently an integer from 1 to 3; ris a group represented by formula 2, and the remaining substituents are as defined herein.
Inventor(s): Jin A KIM of Suwon-si (KR) for samsung electronics co., ltd., Ju Hyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Yuho WON of Suwon-si (KR) for samsung electronics co., ltd., Won Sik YOON of Suwon-si (KR) for samsung electronics co., ltd., Taehyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunju KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K50/115, C09K11/02, C09K11/06, H10K85/30
CPC Code(s): H10K50/115
Abstract: a light emitting device includes a first electrode and a second electrode facing each other, a light emitting layer disposed between the first electrode and the second electrode, and the light emitting layer including quantum dots, wherein the light emitting layer includes a first light emitting layer proximate to the first electrode and a second light emitting layer proximate to the second electrode, the quantum dots of the first light emitting layer include a first ligand on a surface, and the quantum dots of the second light emitting layer include a second ligand on a surface, the first ligand different from the second ligand, a homo energy level of the first light emitting layer is lower (shallower) than a homo energy level of the second light emitting layer.
Inventor(s): Sunjin SONG of Seoul (KR) for samsung electronics co., ltd., Seokho SONG of Seoul (KR) for samsung electronics co., ltd., Wonjae JOO of Seongnam-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K50/818, H10K50/852, H10K59/121
CPC Code(s): H10K50/818
Abstract: provided is a light-emitting device including a reflective layer including a plurality of nano-structures two-dimensionally disposed regularly and a low-refractive-index layer disposed adjacent to the plurality of nano-structures, a first electrode disposed on the reflective layer, an organic emission layer disposed on the first electrode, and a second electrode disposed on the organic emission layer, wherein each of the plurality of nano-structures includes a non-metallic material, and the low-refractive-index layer includes a dielectric material having a second refractive index lower than a first refractive index of the non-metallic material.
Inventor(s): Sunghun Lee of Suwon-si (KR) for samsung electronics co., ltd., Myungsun Sim of Suwon-si (KR) for samsung electronics co., ltd., Kijung Jung of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd., Yasushi KOISHIKAWA of Suwon-si (KR) for samsung electronics co., ltd., Sunghun Hong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06
CPC Code(s): H10K85/342
Abstract: an organic light-emitting device, including a first electrode, a second electrode, and an organic layer arranged between the first electrode and the second electrode, wherein the organic layer includes an emission layer and an n-doped layer, the n-doped layer is arranged between the first electrode and the emission layer, the emission layer includes at least one organometallic compound, and the at least one organometallic compound includes at least one silyl group or at least one germyl group.
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Hweayoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06
CPC Code(s): H10K85/361
Abstract: an organometallic compound represented by formula 1:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Hweayoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06
CPC Code(s): H10K85/361
Abstract:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Hweayoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06
CPC Code(s): H10K85/361
Abstract: wherein, in formula 1, mis a transition metal, lis a ligand represented by formula 1a, lis a ligand represented by formula 1b, and n1 and n2 are each independently 1 or 2,
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Hweayoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06
CPC Code(s): H10K85/361
Abstract:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Hweayoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06
CPC Code(s): H10K85/361
Abstract: wherein xis c or n; xis c or n; ring cyand ring lio are each independently a c-ccarbocyclic group or a c-cheterocyclic group; xis c(r) or n; xis c(r) or n; xis c(r) or n; xis c(r) or n; * and *′ each indicate a binding site to m; rand r, rand r, or rand rare bonded to each other to form a substituted or unsubstituted c-ccarbocyclic group or a substituted or unsubstituted c-cheterocyclic group; and the remaining substituent groups are as defined herein.
Inventor(s): Tae Jin CHOI of Suwon-si (KR) for samsung electronics co., ltd., Hyeong-Ju KIM of Suwon-si (KR) for samsung electronics co., ltd., Feifei FANG of Suwon-si (KR) for samsung electronics co., ltd., Sungyoung YUN of Suwon-si (KR) for samsung electronics co., ltd., Jeoung In YI of Suwon-si (KR) for samsung electronics co., ltd., Younhee LIM of Suwon-si (KR) for samsung electronics co., ltd., Juhyung LIM of Suwon-si (KR) for samsung electronics co., ltd., Hyerim HONG of Suwon-si (KR) for samsung electronics co., ltd., Daiki MINAMI of Suwon-si (KR) for samsung electronics co., ltd., Kyung Bae PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/60, C07D487/06, C07D495/04, C07F7/08, H10K85/40
CPC Code(s): H10K85/657
Abstract: provided are a compound represented by chemical formula 1a or 1b and a photoelectric device, a light absorption sensor, a sensor-embedded display panel, and an electronic device including the same.
Inventor(s): Tae Jin CHOI of Suwon-si (KR) for samsung electronics co., ltd., Hyeong-Ju KIM of Suwon-si (KR) for samsung electronics co., ltd., Feifei FANG of Suwon-si (KR) for samsung electronics co., ltd., Sungyoung YUN of Suwon-si (KR) for samsung electronics co., ltd., Jeoung In YI of Suwon-si (KR) for samsung electronics co., ltd., Younhee LIM of Suwon-si (KR) for samsung electronics co., ltd., Juhyung LIM of Suwon-si (KR) for samsung electronics co., ltd., Hyerim HONG of Suwon-si (KR) for samsung electronics co., ltd., Daiki MINAMI of Suwon-si (KR) for samsung electronics co., ltd., Kyung Bae PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/60, C07D487/06, C07D495/04, C07F7/08, H10K85/40
CPC Code(s): H10K85/657
Abstract:
Inventor(s): Tae Jin CHOI of Suwon-si (KR) for samsung electronics co., ltd., Hyeong-Ju KIM of Suwon-si (KR) for samsung electronics co., ltd., Feifei FANG of Suwon-si (KR) for samsung electronics co., ltd., Sungyoung YUN of Suwon-si (KR) for samsung electronics co., ltd., Jeoung In YI of Suwon-si (KR) for samsung electronics co., ltd., Younhee LIM of Suwon-si (KR) for samsung electronics co., ltd., Juhyung LIM of Suwon-si (KR) for samsung electronics co., ltd., Hyerim HONG of Suwon-si (KR) for samsung electronics co., ltd., Daiki MINAMI of Suwon-si (KR) for samsung electronics co., ltd., Kyung Bae PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/60, C07D487/06, C07D495/04, C07F7/08, H10K85/40
CPC Code(s): H10K85/657
Abstract: details for chemical formulas 1a and 1b are as described in the detailed description.
Samsung Electronics Co., Ltd. patent applications on July 18th, 2024
- Samsung Electronics Co., Ltd.
- A23B4/056
- A23B4/052
- F24C7/02
- CPC A23B4/056
- Samsung electronics co., ltd.
- A47L11/282
- A47L13/16
- CPC A47L11/282
- A61H3/00
- A61H1/02
- CPC A61H3/00
- A63F13/32
- A63F13/497
- H04N21/422
- H04N21/431
- H04N21/478
- CPC A63F13/32
- B01D46/46
- A61L9/20
- B01D46/00
- B01D46/44
- F24F8/10
- F24F8/22
- F24F8/80
- F24F110/65
- CPC B01D46/46
- B08B3/02
- B05B1/02
- CPC B08B3/024
- B24B37/015
- CPC B24B37/015
- B24B37/10
- B24B49/14
- B24B53/017
- B24B57/02
- H01L21/67
- CPC B24B37/107
- CPC B24B57/02
- C07F7/22
- G03F7/004
- G03F7/20
- CPC C07F7/2224
- C07F15/00
- H10K50/11
- H10K50/15
- H10K50/16
- H10K85/30
- CPC C07F15/0033
- D06F95/00
- A47G25/40
- D06F58/10
- D06F59/02
- D06F89/02
- CPC D06F95/00
- F25B49/02
- F25B40/02
- F25B41/31
- CPC F25B49/02
- F25D23/12
- F25D23/02
- CPC F25D23/126
- F25D23/04
- G01C21/36
- G06V20/10
- CPC G01C21/3602
- G01N23/223
- G01N23/207
- H01L21/66
- CPC G01N23/223
- G01S5/00
- G01S5/02
- H04W64/00
- CPC G01S5/01
- G02B6/293
- CPC G02B6/29301
- G03F7/039
- CPC G03F7/0045
- G03F7/00
- G03F1/42
- G03F1/44
- H01L21/266
- CPC G03F7/70633
- G05B19/042
- G06F1/20
- CPC G05B19/042
- G05B23/02
- CPC G05B23/0297
- G05D13/02
- B62K11/00
- CPC G05D13/02
- G06F1/324
- G06F1/3293
- G06N3/02
- G06N20/00
- CPC G06F1/324
- G06F3/06
- CPC G06F3/061
- G06F12/02
- CPC G06F3/0616
- CPC G06F3/0619
- CPC G06F3/0631
- G06F5/01
- CPC G06F5/01
- G06F7/544
- G06F7/501
- G11C7/10
- CPC G06F7/5443
- G06F11/14
- CPC G06F11/1469
- G06F11/16
- G06F1/10
- CPC G06F11/1604
- G06F11/34
- CPC G06F11/3457
- CPC G06F12/0292
- G06F12/0815
- CPC G06F12/0815
- G06F12/1027
- CPC G06F12/1027
- G06F13/16
- G06F13/40
- CPC G06F13/1668
- G06F21/57
- CPC G06F21/572
- G06F30/392
- CPC G06F30/392
- G06F40/279
- G06F40/247
- CPC G06F40/279
- G06K19/077
- G05F1/575
- CPC G06K19/07773
- G06N3/04
- CPC G06N3/04
- G06N3/08
- CPC G06N3/08
- G06N3/09
- G06N3/048
- CPC G06N3/09
- G06N3/0985
- CPC G06N3/0985
- CPC G06N20/00
- G06T5/00
- CPC G06T5/006
- G06T7/50
- G06V10/44
- G06V10/74
- G06V10/80
- CPC G06T7/50
- G06T13/40
- G06T15/04
- G06T17/20
- G06T19/00
- CPC G06T13/40
- G06V10/774
- G06V10/26
- G06V10/764
- G06V10/77
- CPC G06V10/774
- G06V10/82
- G06V10/771
- G06V10/776
- CPC G06V10/82
- G06V20/50
- G01C21/00
- G06F16/29
- G06F16/535
- G06V10/40
- CPC G06V20/50
- G06V20/60
- G06T7/70
- G06V10/54
- G06V10/56
- CPC G06V20/60
- G09G3/00
- G06F1/16
- G06F3/14
- CPC G09G3/035
- G06F3/04886
- G10L15/22
- G10L15/06
- CPC G10L15/22
- G11C7/04
- G11C7/08
- G11C7/14
- CPC G11C7/04
- G11C11/4093
- G11C5/06
- G11C11/4074
- G11C11/4094
- G11C11/4096
- G11C11/4099
- CPC G11C11/4093
- G11C16/10
- G11C16/08
- G11C16/30
- CPC G11C16/102
- G11C16/28
- G11C16/34
- G11C16/04
- CPC G11C16/3427
- H01J37/32
- CPC H01J37/32917
- H01L21/02
- H01L29/20
- H01L29/66
- H01L29/78
- CPC H01L21/0254
- CPC H01L21/67046
- H01L23/00
- CPC H01L21/67092
- H01L21/027
- CPC H01L21/67225
- H01L21/673
- H01J37/20
- CPC H01L21/67336
- H01L21/768
- H01L21/311
- H01L21/3213
- CPC H01L21/76831
- H10B41/27
- H10B41/41
- H10B43/27
- H10B43/40
- CPC H01L22/32
- H01L23/48
- H01L29/06
- H01L29/417
- H01L29/423
- H10B10/00
- CPC H01L23/481
- H01L23/498
- H01L23/31
- H01L25/10
- H10B80/00
- CPC H01L23/49822
- H01L23/367
- H01L25/065
- CPC H01L23/49838
- H01L25/18
- H01L23/528
- CPC H01L23/528
- H01L23/522
- H01L27/088
- H01L29/775
- CPC H01L23/5286
- CPC H01L24/20
- CPC H01L25/0652
- H01L23/544
- CPC H01L25/0657
- H01L23/538
- CPC H01L25/105
- H01L27/02
- H01L27/092
- CPC H01L27/0207
- CPC H01L27/088
- H01L27/118
- CPC H01L27/11807
- H01L27/146
- CPC H01L27/14612
- G02B1/116
- CPC H01L27/1462
- G02B1/00
- CPC H01L27/14625
- H04N25/13
- CPC H01L27/14627
- CPC H01L27/1463
- CPC H01L27/14634
- H01G4/30
- H10B12/00
- CPC H01L28/65
- H01L21/8234
- H01L29/786
- CPC H01L29/0665
- H01L21/8238
- H01L25/07
- H01L27/06
- CPC H01L29/0673
- H01L29/778
- CPC H01L29/2003
- H01L29/45
- CPC H01L29/456
- H01L29/08
- CPC H01L29/66545
- CPC H01L29/78642
- H01L31/108
- H01L31/032
- CPC H01L31/108
- H01L31/113
- H01L31/028
- H01L31/18
- CPC H01L31/1136
- H01L33/02
- G02B5/00
- H01L33/24
- CPC H01L33/025
- H01Q3/46
- H01Q1/24
- H01Q9/04
- CPC H01Q3/46
- H01S5/323
- H01S5/028
- H01S5/40
- CPC H01S5/323
- H02P29/00
- G01V3/02
- H02K7/06
- H05K5/02
- CPC H02P29/0016
- H04B7/06
- H04L5/00
- H04W8/22
- CPC H04B7/0626
- H04B17/345
- H04W24/10
- H04W52/52
- CPC H04B17/345
- H04L1/1812
- H04W72/1268
- H04W72/1273
- H04W72/51
- H04W84/06
- CPC H04L1/1812
- H04L1/1829
- H04W76/28
- CPC H04L1/1848
- CPC H04L5/0094
- H04L12/28
- G06V10/75
- CPC H04L12/282
- H04L65/1096
- H04L65/1069
- H04L65/1104
- CPC H04L65/1096
- H04L67/14
- H04L41/0894
- H04L41/5051
- CPC H04L67/14
- H04N7/035
- H04N17/00
- CPC H04N7/0357
- H04N19/105
- H04N19/159
- H04N19/176
- H04N19/52
- H04N19/80
- CPC H04N19/105
- H04N19/13
- H04N19/51
- H04N19/70
- H04N19/91
- CPC H04N19/13
- H04N19/17
- CPC H04N19/17
- H04N19/119
- H04N19/184
- CPC H04N19/91
- H04N21/443
- H04N21/41
- H04N21/4363
- CPC H04N21/4436
- H04N23/84
- H04N23/16
- H04N23/68
- H04N23/88
- CPC H04N23/843
- G02B5/20
- G02B27/10
- G02B27/12
- CPC H04N25/134
- H04N25/77
- CPC H04N25/135
- H04N25/46
- G06T5/50
- H04N25/75
- CPC H04N25/46
- H04N25/51
- H04N23/71
- H04N25/57
- H04N25/772
- CPC H04N25/51
- H04N25/60
- H04N25/78
- CPC H04N25/60
- CPC H04N25/78
- H04R1/02
- H04N23/51
- CPC H04R1/025
- H04S7/00
- G06V20/40
- G11B27/036
- CPC H04S7/30
- H04W12/0431
- H04W12/06
- H04W48/16
- CPC H04W12/0431
- H04W4/02
- H04W24/02
- CPC H04W24/10
- H04W52/32
- H04W28/02
- CPC H04W28/0273
- H04W36/00
- H04W36/30
- CPC H04W36/0069
- H04W40/02
- H04L45/302
- H04W40/24
- H04W76/10
- CPC H04W40/02
- H04W48/06
- H04W48/18
- H04W60/00
- CPC H04W48/06
- H04W48/08
- CPC H04W48/08
- H04W8/00
- H04W8/20
- H04W76/11
- CPC H04W48/18
- H04W52/02
- CPC H04W52/0206
- H04W56/00
- CPC H04W56/001
- CPC H04W64/00
- H04W72/0453
- H04W72/542
- CPC H04W72/0453
- H04W74/08
- CPC H04W74/08
- CPC H04W76/10
- H04W76/19
- H04W72/21
- CPC H04W76/19
- H04W76/25
- H04W60/04
- CPC H04W76/25
- CPC H04W76/28
- H04W76/50
- CPC H04W76/50
- H05B45/325
- H05B45/28
- H05B45/37
- H05B45/395
- CPC H05B45/325
- H05K1/11
- H05K1/14
- CPC H05K1/111
- CPC H05K5/0247
- CPC H10B12/315
- CPC H10B12/34
- CPC H10B12/482
- CPC H10B12/488
- CPC H10B12/50
- H10B43/10
- H10B43/35
- CPC H10B43/27
- H10B41/35
- H10B41/40
- CPC H10B43/35
- H10B51/20
- H01L21/28
- H01L29/51
- H10B51/10
- CPC H10B51/20
- H10B51/30
- CPC H10B51/30
- CPC H10K50/11
- H10K50/115
- C09K11/02
- C09K11/06
- CPC H10K50/115
- H10K50/818
- H10K50/852
- H10K59/121
- CPC H10K50/818
- CPC H10K85/342
- CPC H10K85/361
- H10K85/60
- C07D487/06
- C07D495/04
- C07F7/08
- H10K85/40
- CPC H10K85/657
