Samsung Electronics Co., Ltd. patent applications on July 11th, 2024
Patent Applications by Samsung Electronics Co., Ltd. on July 11th, 2024
Samsung Electronics Co., Ltd.: 317 patent applications
Samsung Electronics Co., Ltd. has applied for patents in the areas of H01L23/00 (20), H01L23/498 (18), H01L29/423 (17), H01L25/065 (15), H01L29/06 (14) H10B43/27 (7), H01L23/481 (4), H01L25/0657 (4), H04W76/28 (4), G06F3/0659 (4)
With keywords such as: device, layer, including, configured, semiconductor, based, data, signal, pattern, and substrate in patent application abstracts.
Patent Applications by Samsung Electronics Co., Ltd.
20240225393. IMPELLER AND CLEANER USING SAME_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Masayuki TAKADA of Yokohama (JP) for samsung electronics co., ltd., Minoru YOSHIDA of Yokohama (JP) for samsung electronics co., ltd.
IPC Code(s): A47L9/22, A47L5/22, F04D17/06
CPC Code(s): A47L9/22
Abstract: a cleaner including a body, a dust case, a shaft, a motor to rotate the shaft, and an impeller that rotates by the rotation of the rotation shaft by the motor to generate a suction force for suctioning air into the body from the dust case through an air passage, the impeller including: a boss portion fixed to the shaft, a base portion extended from the boss portion and having a diameter that increases from an intake side toward a discharge side of the air passage, and a plurality of blades on the base portion, each blade including: a wind cutting edge having a proximal end, and a protruding end, is behind the proximal end in a rotation direction of the impeller, and is closer to the intake side than the boss portion and a wind sending edge that is farther from the boss portion than the wind cutting edge.
Inventor(s): Jongsoo HONG of Suwon-si (KR) for samsung electronics co., ltd., Jeehoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Chunseong KIM of Suwon-si (KR) for samsung electronics co., ltd., Byoungwoo KO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A47L11/40, A47L11/282
CPC Code(s): A47L11/4011
Abstract: a cleaner including a wet cloth brush to which a pad is installable so as to be below a bottom surface of the wet cloth brush, the wet cloth brush including a pad motor configured to rotate a pad installed to the wet cloth brush, a water supplier configured to spray water to a surface to be cleaned, a light source configured to irradiate light to the pad installed to the wet cloth brush, and a processor configured to, based on an intensity of the light reflected from the pad, control a rotation speed of the pad motor, and/or control an amount of water sprayed by the water supplier to the surface to be cleaned.
Inventor(s): Hye Rim LIM of Suwon-si (KR) for samsung electronics co., ltd., Ui Kun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Young Soo Kim of Suwon-si (KR) for samsung electronics co., ltd., Chang Soon Park of Suwon-si (KR) for samsung electronics co., ltd., Dae Geun Jang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A61B5/021, A61B5/00, A61B5/024
CPC Code(s): A61B5/021
Abstract: apparatus and method for estimating blood pressure, including a plurality of sensors; and at least one processor configured to: determine situation information and posture information prior to estimation of blood pressure of a user based on data acquired using the plurality of sensors, select a cardiovascular feature from among a plurality of predetermined cardiovascular features based on the situation information and the posture information, generate a blood pressure estimation model based on the cardiovascular feature, the situation information, and the posture information, and estimate the blood pressure of the user based on the generated blood pressure estimation model.
Inventor(s): Myoung Hoon Jung of Suwon-si (KR) for samsung electronics co., ltd., Jin Young Park of Suwon-si (KR) for samsung electronics co., ltd., Kun Sun Eom of Suwon-si (KR) for samsung electronics co., ltd., Jeong Eun Hwang of Suwon-si (KR) for samsung electronics co., ltd., Yoon Jae Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyun Seok Moon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A61B5/1455, A61B5/00
CPC Code(s): A61B5/1455
Abstract: an apparatus for estimating bio-information, includes: a sensor configured to detect at least one first light signal and at least one second light signal, each of the at least one first light signal having a first light path from an object and each of the at least one second light signal having a second light path from the object that is different from the first light path; and a processor configured to: obtain a first absorbance based on the at least one first light signal, obtain a second absorbance based on the at least one second light signal, and estimate bio-information based on a difference between the first absorbance and the second absorbance.
Inventor(s): Jeongsik IN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A63F13/77, G06F9/50
CPC Code(s): A63F13/77
Abstract: an electronic device according to an embodiment includes: a scaling server configured to execute a first event occurring in a first region allocated a plurality of cells, at least one game server configured to execute a second event occurring in at least one second region adjacent to the first region, and at least one processor configured to process the scaling server and the at least one game server. the at least one processor configured to control at least one of the scaling server or the at least one game server so that at least one cell is transferred between the first region and the second region, based on a first load by the first event and a second load by the second event.
20240226808. DETACHABLE CHEMICAL FILTERS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Mira Park of Suwon-si (KR) for samsung electronics co., ltd., Heonkyu Kim of Suwon-si (KR) for samsung electronics co., ltd., Kieung Lee of Cheongju-si (KR) for samsung electronics co., ltd., Hoigu Jang of Cheongju-si (KR) for samsung electronics co., ltd., Jiyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Jua Ryu of Suwon-si (KR) for samsung electronics co., ltd., Sojung Park of Suwon-si (KR) for samsung electronics co., ltd., Mingyeong Shin of Cheongju-si (KR) for samsung electronics co., ltd., Jiwoong Shin of Suwon-si (KR) for samsung electronics co., ltd., Jungsuk Oh of Cheongju-si (KR) for samsung electronics co., ltd., Taijin Yoon of Cheongju-si (KR) for samsung electronics co., ltd., Minseon Lee of Suwon-si (KR) for samsung electronics co., ltd., Hyoyoung Lee of Cheongju-si (KR) for samsung electronics co., ltd., Jinhong Kim of Cheongju-si (KR) for samsung electronics co., ltd.
IPC Code(s): B01D53/82, B01D53/04, B01J20/02, B01J20/04, B01J20/16, B01J20/20, B01J20/28, B01J20/32, B01J39/04, B01J39/18, B01J41/04, B01J41/12, B01J47/024, B01J47/026
CPC Code(s): B01D53/82
Abstract: a chemical filter includes a first buffer layer, at least one first filter layer disposed on the first buffer layer and including a pair of first air-permeable bodies facing each other and at least one first adsorption layer between the pair of first air-permeable bodies, and a second filter layer disposed on the first filter layer and including a pair of second air-permeable bodies facing each other and at least one second adsorption layer between the pair of second air-permeable bodies, wherein the first filter layer is configured to be attachable to and detachable from the second filter layer.
Inventor(s): Jun Hee LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyoung Whan OH of Suwon-si (KR) for samsung electronics co., ltd., Ho Kyun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B05B12/00, B05B1/08
CPC Code(s): B05B12/006
Abstract: an apparatus for supplying a treating material includes a nozzle discharging the treating material onto a substrate. a flow pipe channels the treating material to the nozzle. a cut-off valve connected to the flow pipe controls the discharge the treating material. a first controller controls a first opening and closing of the cut-off valve. a second controller controls a second opening and closing of the cut-off valve. the second opening and closing of the cut-off valve is performed by the second controller after a delay time has elapsed after the first opening and closing is completed.
Inventor(s): SEUNGJUN LEE of Suwon-si (KR) for samsung electronics co., ltd., Jinoh Im of Suwon-si (KR) for samsung electronics co., ltd., ILYOUNG YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B24B37/013
CPC Code(s): B24B37/013
Abstract: a chemical mechanical polishing apparatus according to an example embodiment includes a polishing platen; a polishing pad which is located on the polishing platen and includes a polishing surface; a slurry supplier configured to supply a slurry to the polishing pad; a polishing head which is located above the polishing pad and configured to mount a wafer thereon; and an additional cmp process condition generator which generates an additional chemical mechanical polishing (cmp) process condition according to a type of residue when there is a residue on a wafer after a cmp process is performed on the wafer.
Inventor(s): YOUNGON OH of Suwon-si (KR) for samsung electronics co., ltd., CHUNGHYUK YOU of Suwon-si (KR) for samsung electronics co., ltd., JIHUN KIM of Suwon-si (KR) for samsung electronics co., ltd., SANGHYUK PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B65G1/127
CPC Code(s): B65G1/127
Abstract: a storage apparatus includes a support part fixedly coupled to a ceiling surface, a rotating plate under the support part, a driving unit connecting the support part and the rotating plate, and a plurality of tables spaced apart from each other. the plurality of tables has an axis. the plurality of tables is connected to the rotating plate. the rotating plate is rotatable about a rotation axis parallel to the axis.
[[20240228946. RECOMBINANT MICROORGANISM INCLUDING GENETIC MODIFICATION THAT INCREASES EXPRESSION OF IRON STORAGE PROTEIN WITH HEME STRUCTURE, AND METHOD OF REDUCING CONCENTRATION OF NITROGEN OXIDE IN SAMPLE USING THE SAME_simplified_abstract_(samsung electronics co., ltd.)]]
Inventor(s): Yu Kyung Jung of Suwon-si (KR) for samsung electronics co., ltd., Jae-Young Kim of Suwon-si (KR) for samsung electronics co., ltd., Seung Hoon Song of Suwon-si (KR) for samsung electronics co., ltd., Woo Yong Shim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C12N1/20, C07K14/195
CPC Code(s): C12N1/205
Abstract: provided are a recombinant microorganisms having a genetic modification that increases the expression of bacterioferritin, a composition comprising the recombinant microorganism for use in reducing a nitrogen oxide concentration in a sample, and a method of reducing a nitrogen oxide concentration in a sample.
Inventor(s): Yoonhee CHOI of Suwon-si (KR) for samsung electronics co., ltd., Seongjoo HAN of Suwon-si (KR) for samsung electronics co., ltd., Keehwan KA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): D06F34/18, D06F33/32, H04N23/61
CPC Code(s): D06F34/18
Abstract: an electronic device and a control method thereof are provided. the electronic device includes a communication interface and at least one processor. the at least one processor obtains identification information of an object. the at least one processor controls the communication information to receive operation-related information of a household appliance. the at least one processor maps setting information selected from among the obtained operation-related information of the household appliance to the obtained identification information of the object.
Inventor(s): Minsung KIM of Suwon-si (KR) for samsung electronics co., ltd., Hooijoong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeonghoon KANG of Suwon-si (KR) for samsung electronics co., ltd., Sung HAN of Suwon-si (KR) for samsung electronics co., ltd., Kwanwoo HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): D06F35/00, D06F37/30, D06F105/48
CPC Code(s): D06F35/006
Abstract: a washing machine according to an aspect of the disclosure includes: a tub to accommodate wash water; a drum inside the tub; a driving device configured to rotate the drum, the driving device including: a coupler configured to move between a first position and a second position to adjust a rotational speed of the drum, and a solenoid configured to move the coupler between the first position and the second position in response to an electric current flowing through the solenoid; a circulation pump configured to operate to circulate the wash water in the tub; and a controller configured to determine when the circulation pump is operating and to control the electric current flowing through the solenoid to move the coupler between the first position and the second position while the circulation pump is determined to be operating.
Inventor(s): Atsushi OHYAGI of Yokohama (JP) for samsung electronics co., ltd., Hitoshi MINAI of Yokohama (JP) for samsung electronics co., ltd., Takashi ANDO of Yokohama (JP) for samsung electronics co., ltd., Tomoyuki OKUNO of Yokohama (JP) for samsung electronics co., ltd., Yasushi URAI of Yokohama (JP) for samsung electronics co., ltd.
IPC Code(s): D06F39/00, C02F1/42, D06F23/02, D06F34/22, D06F39/02, D06F39/12
CPC Code(s): D06F39/007
Abstract: a disclosed drum-type washing machine having a softening apparatus comprises: a cylindrical water tank accommodating laundry and having a rotating drum; a case for accommodating the water tank; and a softening apparatus having a hardness component remover for removing hardness components from washing water, and a regeneration agent accommodation unit spaced apart from the hardness component remover on opposite sides from a center of the tub, and for accommodating a regeneration agent that regenerates a function of the hardness component remover.
20240229331. WASHING MACHINE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Doyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Geonhui JO of Suwon-si (KR) for samsung electronics co., ltd., Bongjin KO of Suwon-si (KR) for samsung electronics co., ltd., Byeongwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Yonggyun YIM of Suwon-si (KR) for samsung electronics co., ltd., Kwangmin CHUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): D06F39/02, D06F34/28
CPC Code(s): D06F39/02
Abstract: a washing machine including a housing, a control panel having an opening and a fixing protrusion, and a detergent supply device configured to be drawn into and out of the opening. the detergent supply device including a body to accommodate a detergent therein, and a handle rotatably connected to the main body and including a locking protrusion. the detergent supply device and the handle are configured to have a locked state in which the detergent supply device is drawn into the washing machine, the locking protrusion is positioned closer to the body than the fixing protrusion, and forward movement of the detergent supply device is restricted by the locking protrusion contacting the fixing protrusion, and, the handle is rotatable to move the locking protrusion thereby releasing the detergent supply device from the locked state to an open state in which forward movement of the detergent supply device through the opening is not restricted.
20240229332. CLOTHING TREATMENT APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kwangmin CHUN of Suwon-si (KR) for samsung electronics co., ltd., Byeongwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Jonghun SUNG of Suwon-si (KR) for samsung electronics co., ltd., Doyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Geonhui JO of Suwon-si (KR) for samsung electronics co., ltd., Youngchul JO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): D06F39/02
CPC Code(s): D06F39/022
Abstract: disclosed herein is a clothing treatment apparatus including a cabinet, a tub disposed within the cabinet, and a detergent supply device configured to supply detergent to the tub, wherein the detergent supply device includes a detergent container configured to store detergent, a housing configured to receive the detergent container and supply the detergent and water to the tub, and a connection tube including an inlet and an outlet, the inlet and the outlet are in communication with the housing so that the detergent supplied from the housing through the inlet can be stored in the connection tube.
Inventor(s): Naeyoung PARK of Suwon-si (KR) for samsung electronics co., ltd., Hyeonuk NA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): D06F39/14, A47L15/42
CPC Code(s): D06F39/14
Abstract: a home appliance including a cabinet; and a door assembly to open and close the cabinet, the door assembly including: a door glass, a glass holder having an opening and supporting the door glass in the opening, a door cover coupled to the glass holder, supporting the door glass in the opening, and forming an outer space inside the door assembly, a door safety on the door cover and forming an inner space inside the door assembly, where a discharge passage in the door assembly connects the inner space to the outer space to discharge air heated in the inner space to the outer space, and the door assembly is configured so that, when the opening is closed, a portion of the door glass protrudes into the cabinet, a portion of the glass holder contacts the cabinet, and the door safety is exposed as a front face of the appliance.
Inventor(s): Dongpil SEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): D06F58/10, D06F58/04, D06F58/22
CPC Code(s): D06F58/10
Abstract: provided is a flow path switching unit of a dryer configured to dry a drying material. the flow path switching unit includes a body portion, and a flow path guide dividing an internal space of the body portion to selectively form one of a first flow path of air for drying the drying material and a second flow path of air for dehumidifying outside air, according to an arrangement position of the body portion, and at a first position, the path switching unit provides the first flow path to guide air from a drum of the dryer toward a heat exchanger of the dryer, and at a second position, the path switching unit provides the second flow path to guide the outside air introduced from an outside of the dryer.
20240230103. COOKING APPLIANCE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jaehee JO of Suwon-si (KR) for samsung electronics co., ltd., Sangwon YUN of Suwon-si (KR) for samsung electronics co., ltd., Myoungkeun KWON of Suwon-si (KR) for samsung electronics co., ltd., Sangjin KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeokkyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Changhyun SON of Suwon-si (KR) for samsung electronics co., ltd., Sungmin OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F24C15/00, F21V29/67, G03B17/55, H05K7/20
CPC Code(s): F24C15/006
Abstract: provided is a cooking appliance including: a main body including a cooking chamber, a door positioned at a front of the main body to open and close the cooking chamber, a camera disposed toward the cooking chamber to obtain a photograph an inside of the cooking chamber, a camera cooling fan configured to intake external air to cool the camera, and an air guide configured to form a flow path such that external air is provided toward the camera by the camera cooling fan. the air guide guides air passed through the camera to be discharged toward a front of the camera cooling fan.
20240230147. DIFFUSER_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seonghyun YOON of Suwon-si (KR) for samsung electronics co., ltd., Kyunghoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinbaek KIM of Suwon-si (KR) for samsung electronics co., ltd., Seonuk NA of Suwon-si (KR) for samsung electronics co., ltd., Eungryeol SEO of Suwon-si (KR) for samsung electronics co., ltd., Jaehyoung SIM of Suwon-si (KR) for samsung electronics co., ltd., Donggyu LEE of Suwon-si (KR) for samsung electronics co., ltd., Eomji JANG of Suwon-si (KR) for samsung electronics co., ltd., Mingi CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F24F13/062, F24F13/12
CPC Code(s): F24F13/062
Abstract: disclosed is a diffuser. the diffuser comprises: a main body configured to be connected to an air duct installed on a ceiling, and comprising an air outlet; a first airflow guide configured to move up and down with respect to the main body to open and close at least a portion of the air outlet, and configured to guide an airflow discharged from the air outlet in response to the air outlet being opened, the first airflow guide comprising an opening configured to allow air to pass through the first airflow guide; and a second airflow guide configured to move up and down with respect to the main body and the first airflow guide to open and close the opening of the first airflow guide, and comprising a downwardly inclined surface configured to guide an airflow discharged from the opening in response to the opening being opened.
20240230314. SEMICONDUCTOR MEASUREMENT APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Garam CHOI of Suwon-si (KR) for samsung electronics co., ltd., Wookrae KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinseob KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinyong KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungho JANG of Suwon-si (KR) for samsung electronics co., ltd., Younguk JIN of Suwon-si (KR) for samsung electronics co., ltd., Daehoon HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01B9/02, G01B9/02097
CPC Code(s): G01B9/02044
Abstract: a semiconductor measurement apparatus may include an illumination unit configured to irradiate light to the sample, an image sensor configured to receive light reflected from the sample and output multiple interference images representing interference patterns of polarization components of light, an optical unit in a path through which the image sensor receives light and including an objective lens above the sample, and a control unit configured to obtain, by processing the multi-interference image, measurement parameters determined from the polarization components at each of a plurality of azimuth angles defined on a plane perpendicular to a path of light incident to the image sensor. the control unit may be configured to determine a selected critical dimension to be measured from a structure in the sample based on measurement parameters. the illumination unit and/or the optical unit may include a polarizer and a compensator having a � wave plate.
Inventor(s): Younghwa JUNG of Suwon-si (KR) for samsung electronics co., ltd., Seho SHIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01C21/20
CPC Code(s): G01C21/20
Abstract: a processor-implemented method includes: generating initial information comprising any one or any combination of any two or more of map information, departure information, and arrival information; generating a plurality of paths by inputting the initial information to a planner ensemble; and training a path distribution estimation model to output a path distribution corresponding to the plurality of paths.
20240230412. IR SENSOR WITH NANO-STRUCTUR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jangwoo YOU of Suwon-si (KR) for samsung electronics co., ltd., Jinmyoung Kim of Suwo-si (KR) for samsung electronics co., ltd., Wontaek Seo of Suwon-si (KR) for samsung electronics co., ltd., Byonggwon Song of Suwon-si (KR) for samsung electronics co., ltd., Yongseop Yoon of Suwon-si (KR) for samsung electronics co., ltd., Duhyun Lee of Suwon-si (KR) for samsung electronics co., ltd., Choongho Rhee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01J5/02, G01J5/0806, G01K7/01
CPC Code(s): G01J5/023
Abstract: an infrared sensor includes a substrate, a reflective layer on an upper surface of the substrate, and a composite layer including an absorption layer including a nanostructure and configured to absorb light energy and a sensing layer including a plurality of temperature sensing cells, where the composite layer is above the upper surface of the substrate, and where the infrared ray sensor further includes a resonant cavity between the composite layer and the reflective layer.
Inventor(s): Sunhong Jun of Suwon-si (KR) for samsung electronics co., ltd., Inkeun Baek of Suwon-si (KR) for samsung electronics co., ltd., Wontae Kim of Suwon-si (KR) for samsung electronics co., ltd., Namil Koo of Suwon-si (KR) for samsung electronics co., ltd., Ingi Kim of Suwon-si (KR) for samsung electronics co., ltd., Sungyoon Ryu of Suwon-si (KR) for samsung electronics co., ltd., Younghoon Sohn of Suwon-si (KR) for samsung electronics co., ltd., Yusin Yang of Suwon-si (KR) for samsung electronics co., ltd., Ikseon Jeon of Suwon-si (KR) for samsung electronics co., ltd., Eunhyuk Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01N21/3581, G01N21/95, H01L21/66
CPC Code(s): G01N21/3581
Abstract: a measuring apparatus includes a stage including a transmissive wafer chuck on which a sample wafer is provided, where the sample wafer includes a silicon substrate and at least one material layer on the silicon substrate, a light source unit including a light source configured to generate and output a femtosecond laser beam, and a confocal laser-induced terahertz (thz) emission microscopy (ltem) unit configured to generate multi-photon excitation by splitting the femtosecond laser beam into four sub-laser beams and causing three sub-laser beams among the four sub-laser beams to be incident in an overlapping manner on a measurement position of the sample wafer, where the confocal ltem unit is configured to generate the multi-photon excitation based on the three sub-laser beams being incident on a lower surface of the silicon substrate.
Inventor(s): Hyunpyo Lee of Seoul (KR) for samsung electronics co., ltd., Hyun Seo Ahn of Seoul (KR) for samsung electronics co., ltd., Suhyuk Choi of Seoul (KR) for samsung electronics co., ltd., Jungock Park of Yongin-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01Q60/60, G01N27/407, G01N27/413
CPC Code(s): G01Q60/60
Abstract: a gas sensor for measuring a gas content in an electrolyte, including: a first channel and a second channel separated by a septum; and a tip, the first channel and the second channel are closed by the tip; a first electrode is located in the first channel, extends to an outer surface of the tip, and exposed on the outer surface of the tip; a second electrode is located in the second channel, extends to the outer surface of the tip, exposed on the outer surface of the tip, and spaced apart from the first electrode; an electrolyte in contact with the outer surface of the tip, in contact with the first electrode and the second electrode, and exposed to an outer surface of the gas sensor; a voltage source; and a current meter, wherein the electrolyte is not present in the first channel and the second channel.
Inventor(s): Gyubaek Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01Q80/00, G01Q60/24
CPC Code(s): G01Q80/00
Abstract: the inventive concept provides a method of removing and collecting particles from a photomask including fabricating the photomask on a substrate, generating a first map indicating locations of particles on a surface of the photomask by inspecting the surface of the photomask using a probe tip, vertically moving the probe tip to a first vertical height that is lower than a height of the particle, horizontally moving the probe tip parallel to the surface of the photomask at the first vertical height, generating a second map indicating locations of particles on the surface of the photomask using the probe tip, vertically moving the probe tip to a second vertical height that is lower than the first vertical height, and horizontally moving the probe tip parallel to the surface of the photomask at the second vertical height.
Inventor(s): Ju Wan LIM of Suwon-si (KR) for samsung electronics co., ltd., Jinho KIM of Suwon-si (KR) for samsung electronics co., ltd., Tae Won SONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01R31/374, G01R31/367, G01R31/388
CPC Code(s): G01R31/374
Abstract: a method for adjusting a current of a battery includes obtaining one or more parameters of a battery including the current of the battery, a voltage and a temperature of the battery, determining a first correction parameter relating to a variation in current due to charging and discharging of the battery, based on at least a portion of the one or more parameters, determining a difference between an electrolyte concentration of an anode surface and an electrolyte concentration of a cathode surface of the battery, based on at least a portion of the one or more parameters, determining a temperature parameter based on the temperature of the battery, determining a second correction parameter relating to a temperature of the battery, based on the difference and the temperature parameter, and determining a correction value for the current of the battery based on the first correction parameter and the second correction parameter.
Inventor(s): Hyunchul KIM of Suwon-si (KR) for samsung electronics co., ltd., Yi YANG of Suwon-si (KR) for samsung electronics co., ltd., Moonseok KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01S13/87, G01S13/76
CPC Code(s): G01S13/876
Abstract: an electronic device according to an embodiment of the disclosure may include: a communication circuit, and at least one processor, comprising processing circuitry, electrically coupled to the communication circuit. at least one processor, individually and/or collectively, may be configured to: receive via the communication circuit an advertising frame transmitted by a first external electronic device, transmit a first request signal, requesting a second external electronic device to receive the advertising frame from the first external electronic device, to the second external electronic device via the communication circuit in response to receiving the advertising frame from the first external electronic device, obtain advertisement result response data, including first timestamp information on a timing at which the second external electronic device receives the advertising frame transmitted by the first external electronic device, from the second external electronic device via the communication circuit, obtain location data including location information of the second external electronic device with respect to the electronic device, based on performing ranging using ultra-wideband (uwb) communication with the second external electronic device, and identify a location of the first external electronic device with respect to the electronic device, based on the advertisement result response data and the location data.
Inventor(s): Sangeun MUN of Suwon-si (KR) for samsung electronics co., ltd., Sungmo AHN of Suwon-si (KR) for samsung electronics co., ltd., Sookyoung ROH of Suwon-si (KR) for samsung electronics co., ltd., Junho LEE of Suwon-si (KR) for samsung electronics co., ltd., Choonlae CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02B3/00, H04N23/55
CPC Code(s): G02B3/0043
Abstract: an image sensor includes a sensor substrate including a plurality of pixels that detect light, and a nano-optical microlens array arranged on the sensor substrate and including a plurality of nano-optical microlenses that focus incident light on the plurality of pixels, wherein the nano-optical microlens array includes a plurality of lens groups, each of the plurality of lens groups includes first, second, third, and fourth nano-optical microlenses, and each of the first, second, third, and fourth nano-optical microlenses includes a plurality of nanostructures arranged to focus incident light on a corresponding pixel, and centers of the first, second, third, and fourth nano-optical microlenses in each of the plurality of peripheral groups in the plurality of lens groups are offset with respect to a center of the corresponding pixel, and offset distances of at least two of the first, second, third, and fourth nano-optical microlenses are different from each other.
Inventor(s): Hyunjin KANG of Seoul (KR) for samsung electronics co., ltd., Seunghak Lee of Hwaseong-si (KR) for samsung electronics co., ltd., Insang Song of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02B7/10, G02B13/00, H04N23/55
CPC Code(s): G02B7/102
Abstract: provided is a camera module including a housing having an opening, and a first lens assembly configured to move in the housing between a first position in which the first lens assembly is entirely provided in the housing, and a second position in which a portion of the first lens assembly protrudes external to the housing through the opening of the housing, a portion of the first lens assembly being attached to the housing by a magnetic force at the second position.
Inventor(s): Sanghun LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaewon BANG of Suwon-si (KR) for samsung electronics co., ltd., Donghyun YEOM of Suwon-si (KR) for samsung electronics co., ltd., Moonsoo CHANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02B27/01, G06V10/764, G06V20/40, H04N23/667
CPC Code(s): G02B27/0172
Abstract: a processor of a wearable device may display, based on identifying a location in a first area based on data of a sensor, a visual object. the processor may be configured to adjust, based on an input indicating selection of the visual object, the state of the camera to a first state for recording media. the processor may be configured to identify whether the location of the wearable device moves to a second area in the first area. the processor may be configured to obtain, based on identifying that the location of the wearable device moves into the second area, media based on the camera of the first state. the present disclosure relates to a metaverse service for enhancing interconnectivity between a real-world object and a virtual object, and the metaverse service may be provided over a network based on 5generation (5g) and/or 6generation (6g) communication systems.
Inventor(s): Nam Jin CHO of Suwon-si (KR) for samsung electronics co., ltd., Yi Hwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Seok Jun HONG of Suwon-si (KR) for samsung electronics co., ltd., Seong Keun CHO of Suwon-si (KR) for samsung electronics co., ltd., Sang Chul HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F1/48, G03F1/60, H01L21/02, H01L21/033
CPC Code(s): G03F1/48
Abstract: a hard mask may include a first layer and a second layer on the first layer. each of the first layer and the second layer may include an amorphous carbon layer. the first layer may have a first extinction coefficient. the second layer may have a second extinction coefficient and the second extinction coefficient may be different from the first extinction coefficient. the first extinction coefficient and the second extinction coefficient each may be in a range of 0.4 to 0.7.
Inventor(s): Kyungoh KIM of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun HAN of Suwon-si (KR) for samsung electronics co., ltd., SukKoo HONG of Suwon-si (KR) for samsung electronics co., ltd., Moo Hyun KOH of Suwon-si (KR) for samsung electronics co., ltd., Haeng Deog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Jaemyoung KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/004, C07F7/22, H01L21/027
CPC Code(s): G03F7/0042
Abstract: provided is a photoresist composition including an organometallic compound including: a central metal; a first ligand compound; and a second ligand compound, wherein the first ligand compound bonds with the central metal, the second ligand compound does not bond with the central metal, and the first or second ligand compound includes a halogen element. the photoresist composition may improve photosensitivity while securing stability.
Inventor(s): Haengdeog Koh of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun Kwak of Suwon-si (KR) for samsung electronics co., ltd., Mijeong Kim of Suwon-si (KR) for samsung electronics co., ltd., Minsang Kim of Suwon-si (KR) for samsung electronics co., ltd., Sunyoung Lee of Suwon-si (KR) for samsung electronics co., ltd., Changheon Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun Im of Suwon-si (KR) for samsung electronics co., ltd., Jungha Chae of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun Han of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/004, C07F7/22
CPC Code(s): G03F7/0042
Abstract: provided are a resist composition and a method of forming a pattern by using the same, the resist composition including: an organometallic compound represented by formula 1; and a polymer including a repeating unit containing a radical generating group, a repeating unit containing a radical accepting group, or any combination thereof.
Inventor(s): Haengdeog Koh of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun Kwak of Suwon-si (KR) for samsung electronics co., ltd., Mijeong Kim of Suwon-si (KR) for samsung electronics co., ltd., Minsang Kim of Suwon-si (KR) for samsung electronics co., ltd., Sunyoung Lee of Suwon-si (KR) for samsung electronics co., ltd., Changheon Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun Im of Suwon-si (KR) for samsung electronics co., ltd., Jungha Chae of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun Han of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/004, C07F7/22
CPC Code(s): G03F7/0042
Abstract:
sn(r)(or) formula
Inventor(s): Haengdeog Koh of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun Kwak of Suwon-si (KR) for samsung electronics co., ltd., Mijeong Kim of Suwon-si (KR) for samsung electronics co., ltd., Minsang Kim of Suwon-si (KR) for samsung electronics co., ltd., Sunyoung Lee of Suwon-si (KR) for samsung electronics co., ltd., Changheon Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun Im of Suwon-si (KR) for samsung electronics co., ltd., Jungha Chae of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun Han of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/004, C07F7/22
CPC Code(s): G03F7/0042
Abstract: descriptions of r, rand n in formula 1 are provided in the specification.
Inventor(s): Haengdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Mijeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Youngmin NAM of Suwon-si (KR) for samsung electronics co., ltd., Chanjae AHN of Suwon-si (KR) for samsung electronics co., ltd., Changheon LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun IM of Suwon-si (KR) for samsung electronics co., ltd., Sungwon CHOI of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/004, G03F7/20, G03F7/32
CPC Code(s): G03F7/0044
Abstract: provided are a resist composition and a pattern forming method using the same. the resist composition may include an organometallic compound represented by formula 1 below and a polymer repeating unit represented by formula 2 below.
Inventor(s): Haengdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Mijeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Youngmin NAM of Suwon-si (KR) for samsung electronics co., ltd., Chanjae AHN of Suwon-si (KR) for samsung electronics co., ltd., Changheon LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun IM of Suwon-si (KR) for samsung electronics co., ltd., Sungwon CHOI of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/004, G03F7/20, G03F7/32
CPC Code(s): G03F7/0044
Abstract:
Inventor(s): Haengdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Mijeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Youngmin NAM of Suwon-si (KR) for samsung electronics co., ltd., Chanjae AHN of Suwon-si (KR) for samsung electronics co., ltd., Changheon LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun IM of Suwon-si (KR) for samsung electronics co., ltd., Sungwon CHOI of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/004, G03F7/20, G03F7/32
CPC Code(s): G03F7/0044
Abstract: in formulas 1 and 2, descriptions of m, r, r, n, a, lto l, a21 to a24, r, r, b22, p, and xrefer to the specification.
Inventor(s): Haengdeog Koh of Suwon-si (KR) for samsung electronics co., ltd., Cheol Kang of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun Kwak of Suwon-si (KR) for samsung electronics co., ltd., Minsang Kim of Suwon-si (KR) for samsung electronics co., ltd., Sunyoung Lee of Suwon-si (KR) for samsung electronics co., ltd., Changheon Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun Im of Suwon-si (KR) for samsung electronics co., ltd., Jungha Chae of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun Han of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/038, C08F12/30, G03F7/004
CPC Code(s): G03F7/0382
Abstract: provided are a resist composition and a method of forming a pattern using the same, the resist composition including an organometallic compound represented by formula 1 below, and a polymer including a repeating unit represented by formula 2 below:
Inventor(s): Haengdeog Koh of Suwon-si (KR) for samsung electronics co., ltd., Cheol Kang of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun Kwak of Suwon-si (KR) for samsung electronics co., ltd., Minsang Kim of Suwon-si (KR) for samsung electronics co., ltd., Sunyoung Lee of Suwon-si (KR) for samsung electronics co., ltd., Changheon Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun Im of Suwon-si (KR) for samsung electronics co., ltd., Jungha Chae of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun Han of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/038, C08F12/30, G03F7/004
CPC Code(s): G03F7/0382
Abstract:
Inventor(s): Haengdeog Koh of Suwon-si (KR) for samsung electronics co., ltd., Cheol Kang of Suwon-si (KR) for samsung electronics co., ltd., Yoonhyun Kwak of Suwon-si (KR) for samsung electronics co., ltd., Minsang Kim of Suwon-si (KR) for samsung electronics co., ltd., Sunyoung Lee of Suwon-si (KR) for samsung electronics co., ltd., Changheon Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyun Im of Suwon-si (KR) for samsung electronics co., ltd., Jungha Chae of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun Han of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/038, C08F12/30, G03F7/004
CPC Code(s): G03F7/0382
Abstract: wherein, in formulas 1 and 2, m, r, r, n, a, lto l, a21 to a23, rto r, b22, p, and xare as described in the specification.
20240231362. ROBOT AND CONTROL METHOD THEREOF_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Dongeui SHIN of Suwon-si (KR) for samsung electronics co., ltd., Daehwan JUNG of Suwon-s (KR) for samsung electronics co., ltd., Minsu HWANGBO of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G05D1/02
CPC Code(s): G05D1/0238
Abstract: a robot, includes: a driver; a plurality of sensors; a memory; and at least one processor configured to transmit a first signal for identifying a presence or absence of an object within a sensing area of the plurality of sensors through a first sensor operating in the signal transmitting mode from among the plurality of sensors during a first time period, identify, a second sensor to transmit a second signal during a third time period after elapse of the second time period from among the plurality of sensors, transmit the second signal by operating the identified second sensor in the signal transmitting mode, identify a location of the object based on whether a second reflection signal corresponding to the second signal is received at the second sensor, and control the driver to travel by avoiding the object based on the identified location of the object.
Inventor(s): Hyunki HONG of Suwon-si (KR) for samsung electronics co., ltd., Youngil KOH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G05D1/646, G05D1/243
CPC Code(s): G05D1/646
Abstract: a robot includes: a plurality of wheels; a plurality of motors; at least one sensor; a memory configured to store first information on a size of the robot; and a processor. the processor is configured to: acquire image data of an escalator from the at least one sensor, acquire second information on a size of a plurality of steps included in the escalator based on the image data, based on the first information and the second information, identify both a boarding position available for the robot to board the escalator among the plurality of steps, and a posture of the robot configured to allow the robot to board at the boarding position, acquire control information for controlling the robot to board at the boarding position in the posture when the boarding position and the posture have been identified, and control the plurality of motors based on the control information.
20240231434. ELECTRONIC DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yuanshui ZHANG of Suzhou Industrial Park (CN) for samsung electronics co., ltd.
IPC Code(s): G06F1/16
CPC Code(s): G06F1/1647
Abstract: an electronic device may include a frame supporting a first display panel, a second display panel, and a third display panel; and an expansion mechanism connected to the frame, and configured to drive the first display panel and the second display panel to move in a first direction, such that the first display panel, the second display panel and the third display panel switch between a screen stacking state and a screen tiling state. in the screen tiling state, the first to third display panels may be arranged side by side in the first direction and the third display panel may be under the first and second display panels. in the screen stacking state, the first to third display panels may be stacked in a second direction.
Inventor(s): Jonggeun YOON of Suwon-si (KR) for samsung electronics co., ltd., Jebin Lee of Suwon-si (KR) for samsung electronics co., ltd., Pilwon Seo of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Jiwoo Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F1/16, G06F3/02, G06F3/0346, G06F3/0354, G06F3/038, G09G3/00
CPC Code(s): G06F1/1652
Abstract: this electronic device may comprise: a flexible display; a first rolling actuator configured to extend the flexible display in a first direction; a second rolling actuator configured to extend the flexible display in a second direction opposite to the first direction; and at least one processor. the at least one processor may be configured to: determine the mounting state of the electronic device; acquire information about the position of a peripheral device, which is linked with the electronic device, based on the mounting state satisfying a designated condition; set the extension direction of the flexible display on the basis of the information about the position of the peripheral device; and control the first rolling actuator and/or the second rolling actuator to extend the flexible display in the first direction and/or the second direction on the basis of the set extension direction.
20240231442. DISPLAY APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sangkyun IM of Suwon-si (KR) for samsung electronics co., ltd., Jaehoo Park of Suwon-si (KR) for samsung electronics co., ltd., Joowhan Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F1/16, H02K3/50, H02K5/15
CPC Code(s): G06F1/1658
Abstract: a display apparatus includes a housing including a base; a motor coupled to the base; a rotating plate on one side of the base; a substrate on the rotating plate; inorganic light-emitting elements on the substrate, the inorganic light-emitting elements being bar shaped and extending in a radial direction from a center of the rotating plate; and a wireless module provided in the housing, the wireless module being configured to transmit and receive power and data to control the inorganic light-emitting elements, wherein the wireless module includes: a first coil; and a second coil inside the first coil or surrounding the first coil, the second coil being configured to generate an induced current due to current flowing in the first coil.
Inventor(s): Myungjune Jung of Suwon-Si (KR) for samsung electronics co., ltd., Euiseong Seo of Seongnam-Si (KR) for samsung electronics co., ltd., Hwaseok Oh of Suwon-Si (KR) for samsung electronics co., ltd., Jooyoung Hwang of Suwon-Si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F1/26
CPC Code(s): G06F1/26
Abstract: a device includes a storage device to receive a first power and transfer data, a computing device to receive a second power and perform computations on the data; a storage power manager to generate a storage power demand value from previous operation of the storage device; a computing power manager to generate a computing power demand value from previous operation of the computing device; and a global power manager to generate a storage target power value indicating a next power limit for the storage device and a computing target power value indicating a next power limit for the computing device, from both of the storage and computing power demand values, wherein the storage power manager provides the first power to the storage device based on the storage target power value, and the computing power manager provides the second power to the computing device based on the computing target power value.
Inventor(s): Jookwan LEE of Suwon-si (KR) for samsung electronics co., ltd., Yongjin KWON of Suwon-si (KR) for samsung electronics co., ltd., Yangwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Jihea PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/041
CPC Code(s): G06F3/041661
Abstract: according to an embodiment, a method of controlling an electronic device including a touch screen panel (tsp) at least a part of which is located in a housing may be withdrawn to the outside of the housing comprises: identifying a withdrawal extent of the tsp; selecting a reference line for controlling a power supplying range of a plurality of touch areas among a plurality of lines for dividing a plurality of touch areas of the tsp based on the withdrawal degree; supplying power to touch areas in a first direction in which the tsp is withdrawn based on the reference line and blocking power to touch areas in a second direction opposite to the first direction based on the reference line, among the plurality of touch areas; and restricting touch recognition with respect to a part extending from the reference line in one touch area adjacent to the reference line among the touch areas in the first direction.
Inventor(s): Juyeoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Joseph KIM of Suwon-si (KR) for samsung electronics co., ltd., Jungwon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/0481, G06F1/16, G06F3/14, H04M1/02
CPC Code(s): G06F3/0481
Abstract: an electronic device is provided. the electronic device includes a display including a main display area and at least one expansion display area expandable from the main display area, a communication module, and a processor, wherein the processor is configured to execute an application of the electronic device in a first state in which the display is not expanded or in a second state in which the display is expanded, display first content on the display, establish a connection with an external device, receive a context generated from the external device, when the context is received, determine a position to display second content related to the context, from among the main display area or the at least one expansion display area, based on a type of the first content and whether the display is in the first state or the second state, and display the second content at the determined position.
Inventor(s): Donghoon JANG of Suwon-si (KR) for samsung electronics co., ltd., Jinhyun PARK of Suwon-si (KR) for samsung electronics co., ltd., Jungwook JANG of Suwon-si (KR) for samsung electronics co., ltd., Gonghwan JUNG of Suwon-si (KR) for samsung electronics co., ltd., Yujin CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/04817, G06F3/04845, G06F3/0486, G06F9/451
CPC Code(s): G06F3/04817
Abstract: an electronic device is provided. the electronic device includes a display, memory storing one or more computer programs, and one or more processors communicatively coupled to the display and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors, cause the electronic device to display a first execution screen of a first application on the display, identify whether the first application is required to be displayed as an icon in response to a request for displaying an execution screen of a second application, based on that the first application is required to be displayed as the icon, display an icon, for displaying a partial area of the first execution screen on a second execution screen while displaying the second execution screen of the second application on the display, and based on that the first application is not required to be displayed as the icon, display the second execution screen of the second application on the display.
Inventor(s): JAEWOONG CHOI of SUWON-SI (KR) for samsung electronics co., ltd., DONGYOUNG LEE of SUWON-SI (KR) for samsung electronics co., ltd., DASOL PARK of SUWON-SI (KR) for samsung electronics co., ltd., JINSOO BAE of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0604
Abstract: a storage device may include a memory, a humidity sensor that collects humidity information of the storage device, and a storage controller that performs a heating operation set to increase a temperature of the storage device through the memory if a humidity value of the humidity information exceeds a reference humidity value.
Inventor(s): SEONGWOOK PARK of Suwon-si (KR) for samsung electronics co., ltd., DEOK JAE OH of Suwon-si (KR) for samsung electronics co., ltd., YOUNGSAM SHIN of Suwon-si (KR) for samsung electronics co., ltd., YEONGON CHO of Suwon-si (KR) for samsung electronics co., ltd., YONGMIN TAI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0608
Abstract: a near-memory processing unit is configured to compress a page present in a normal memory space of a memory when receiving a swap-out command from a host, allocate a memory area in which the compressed page is to be stored in a compressed memory space which is a memory area previously allocated by the host, copy the compressed page into the allocated memory area, generate an entry corresponding to the compressed page, and insert the generated entry into an entry tree.
Inventor(s): Minseok Ko of Suwon-si (KR) for samsung electronics co., ltd., Jaewook Kwak of Suwon-si (KR) for samsung electronics co., ltd., Minwook Jung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0613
Abstract: a method of operating a memory controller is provided. the method includes: receiving a write request from a host; determining whether to inactivate a throttling operation based on whether the write request corresponds to a throttling disable word line and whether a memory block corresponding to the write request needs to be erased; and performing a write operation corresponding to the write request based on the determining.
Inventor(s): Yuehua DAI of Xi'an (CN) for samsung electronics co., ltd., Liyuan ZHANG of Xi'an (CN) for samsung electronics co., ltd., Xiao LAN of Xi'an (CN) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0655
Abstract: a non-uniform memory access (numa) architecture-based near-memory processing (nmp) emulator apparatus includes a host simulator module configured to perform a function of a host system using a non-uniform memory access (numa) node of a numa architecture, and one or more acceleration dual in-line memory module (axdimm) emulator modules, wherein each of the one or more axdimm emulator modules is configured to perform a function of a stream of an axdimm architecture using a numa node of the numa architecture.
Inventor(s): JONG WON LEE of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0659
Abstract: a method for operating a computational storage device includes receiving by a storage controller and from a host device: (1) a compute namespace setting instruction instructing the setting of a compute namespace; (2) a latency threshold value related to the compute namespace; (3) a program; (4) a first execute command using the program; and (5) a second execute command using the program. additionally, the method includes transmitting, by the storage controller and to the host device, a latency message in response to the second execute command.
Inventor(s): Keeho Jung of Suwon-si (KR) for samsung electronics co., ltd., Suchang Jeon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0659
Abstract: a memory device includes a memory cell array having a plurality of cell blocks therein, including at least one cell block configured to store information data read (idr) data related to setting an operating environment of the memory device. a setting data storage circuit is provided, which includes a plurality of storage regions in which the idr data, which is read from the at least one cell block, is stored and a reset operation is independently controlled. control logic is provided, which is configured to control at least one of a reset operation on the setting data storage circuit, and an idr operation of updating the idr data to the setting data storage circuit according to a decoding result of an external command. the control logic is configured to selectively reset only some storage regions of the setting data storage circuit in response to a determination that the external command is a first reset command, but reset all storage regions of the setting data storage circuit in response to a determination that the external command is a second reset command.
Inventor(s): Byungsue Jung of Suwon-si (KR) for samsung electronics co., ltd., Kyungduk Lee of Suwon-si (KR) for samsung electronics co., ltd., Jaeik Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0659
Abstract: a operating method of a storage device including a nonvolatile memory, where the method may include: receiving a first packet including a read command for the nonvolatile memory from a host according to a first protocol; acquiring first requester information corresponding to an identifier (id) of the host by parsing the first packet; determining resource priorities based on first requester information; reading data stored in the nonvolatile memory by using resources of the storage device according to the resource priorities; and transmitting the data to the host.
Inventor(s): Yonghoon CHO of Suwon-si (KR) for samsung electronics co., ltd., Daekyu PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0659
Abstract: provided is an operating method of a storage controller. the method includes fetching, by a processor, a command for a non-volatile memory received from a host, dividing, by the processor, the command into internal processing units, transmitting, by the processor, a first time point at which the command is divided into internal processing units to a latency calculation circuit, executing, by the processor, the command of an internal processing unit to a memory, transmitting, by the processor, a second time point at which the command of an internal processing unit is executed to the latency calculation circuit, calculating, by the latency calculation circuit, latency for the command based on the received first time point and the received second time point, and determining, by the latency calculation circuit, whether the calculated latency exceeds a preset threshold latency.
Inventor(s): Bokun CHOI of Suwon-si (KR) for samsung electronics co., ltd., Minho KANG of Suwon-si (KR) for samsung electronics co., ltd., Gajin SONG of Suwon-si (KR) for samsung electronics co., ltd., Jaeyung YEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/14, G06F3/023, G06F3/0354, G06F3/0488
CPC Code(s): G06F3/1423
Abstract: disclosed are an electronic device for controlling at least one input device and a control method thereof. an electronic device, according to an embodiment of the disclosure, may: acquire identification information of an external display device based on the electronic device being operably connected to the external display device; acquire identification information of at least one input device from the at least one input device located within a threshold proximity of the electronic device; compare the acquired identification information of the at least one input device with reference information of the input device associated with the identification information of the external display device and stored in the memory; and connect to the at least one input device based on a result of the comparison.
Inventor(s): Jung HUR of Suwon-si (KR) for samsung electronics co., ltd., Youngkook KIM of Suwon-si (KR) for samsung electronics co., ltd., Sanghoon OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/14, G06F3/04817, G06F3/04842, G06F3/04847
CPC Code(s): G06F3/1438
Abstract: according to an aspect of the disclosure, a display system includes: at least one source apparatus; and at least one modular display apparatus comprising a plurality of cabinets and connected to the at least one source apparatus, wherein each of the at least one source apparatus comprises: an output interface; a communication interface connected to the at least one modular display apparatus; and at least one processor configured to: receive, through the communication interface, a notification request signal from the at least one modular display apparatus, and based on the notification request signal, output notification information through the output interface, and wherein the notification request signal corresponds to a control signal transmitted by a control apparatus to the at least one modular display apparatus.
Inventor(s): Wooseok YI of Suwon-si (KR) for samsung electronics co., ltd., Soon-Wan KWON of Suwon-si (KR) for samsung electronics co., ltd., Seungchul JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F7/544, G06F7/556
CPC Code(s): G06F7/5443
Abstract: a memory device includes: a computing module; and an in-memory computing (imc) macro comprising: a memory comprising a plurality of bit cells storing pieces of fraction data of a first data set; and an imc computing module configured to perform an operation between the pieces of fraction data of the first data set read from the memory and pieces of fraction data of a second data set received from an input control module, wherein a plurality of pieces of data included in the first data set share a first exponent, and wherein a plurality of pieces of data included in the second data set share a second exponent.
Inventor(s): Jinhoon CHO of Suwon-si (KR) for samsung electronics co., ltd., Heeyoung CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Doha KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunkyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Ho KIM of Suwon-si (KR) for samsung electronics co., ltd., Kyoungsoo YOON of Suwon-si (KR) for samsung electronics co., ltd., Minjoo JUNG of Suwon-si (KR) for samsung electronics co., ltd., Jaehyun HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F9/451
CPC Code(s): G06F9/451
Abstract: an electronic device is provided. the electronic device includes a communication circuit for communicating with at least one external electronic device, memory that stores configuration reference information for selecting at least one piece of data, and a processor communicatively coupled to the communication circuit and the memory. the memory stores one or more computer programs including computer-executable instructions that, when executed by the one or more processors, cause the electronic device to acquire, via the communication circuit, first data of a first external electronic device and second data of a second external electronic device having the same account as the first external electronic device, select, on the basis of the configuration reference information stored in the memory, at least one piece of data from among the first data and the second data, and generate a user interface on the basis of the selected at least one piece of data.
Inventor(s): Kwangsub BYUN of Suwon-si (KR) for samsung electronics co., ltd., Seungjin PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F9/451, G06F3/14
CPC Code(s): G06F9/451
Abstract: a display apparatus is provided. the display apparatus includes a display and a processor configured to count time for operating a screen saver after a user input is received, and based on the counted time corresponding to a threshold time, control the display to display a screen corresponding to the screen saver by operating the screen saver.
Inventor(s): Myeong Woo KIM of Suwon-si (KR) for samsung electronics co., ltd., Yongdeok KIM of Suwon-si (KR) for samsung electronics co., ltd., Changin CHOI of Suwon-si (KR) for samsung electronics co., ltd., Seungwon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F9/50, G06F16/17
CPC Code(s): G06F9/5055
Abstract: a processor-implemented method with data loading includes: based on sizes of a plurality of data files in a training dataset, dividing the training dataset into a plurality of sub-sets; loading some data files in each sub-set into a plurality of processors; determining a packing combination of one or more data files loaded to processors in a same group among the plurality of processors, based on a ratio of a number of data files between the plurality of sub-sets and a batch size of distributed training; determining packed data files by packing the one or more data files according to the packing combination; and reallocating the packed data files to the processors in the same group.
Inventor(s): Hyunjin NOH of Suwon-si (KR) for samsung electronics co., ltd., Sungyong BANG of Suwon-si (KR) for samsung electronics co., ltd., Jonglin LEE of Suwon-si (KR) for samsung electronics co., ltd., Jongwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Hakryoul KIM of Suwon-si (KR) for samsung electronics co., ltd., Mooyoung KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F9/50, G01K7/22, G01K13/00
CPC Code(s): G06F9/5094
Abstract: an electronic device is provided. an electronic device includes at least one antenna module, a first communication circuit configured to provide first communication via the at least one antenna module, a plurality of temperature sensor, at least one processor operationally connected to the first communication circuit and the plurality of temperature sensors, and memory. the memory may store instructions which, when executed, cause the at least one processor to obtain a first temperature associated with the electronic device via the plurality of temperature sensors, identify a second temperature associated with the first communication based on the first temperature being equal to or higher than a first threshold value, identify an operation state of at least one application, in which data throughput associated with the first communication is equal to or more than designated throughput, based on the second temperature being equal to or higher than a second threshold value, and adjust first data throughput of a first application, which is operating in a background state, among the at least one application.
Inventor(s): Joohee PARK of Suwon-si (KR) for samsung electronics co., ltd., Nayoung KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F9/54
CPC Code(s): G06F9/542
Abstract: a notification message display method of an electronic device, the method including receiving, from a server device, a notification message and keyword metadata corresponding to an event occurrence of an external electronic device; determining contextual information of a user based on a notification acknowledgement action being input from the user; determining at least one keyword that corresponds to the determined contextual information; and, based on the determined at least one keyword and the determined contextual information, maintaining the notification message and displaying the maintained notification message on a screen, or reconstructing the notification message and displaying the reconstructed notification message on the screen.
Inventor(s): Jooyong PARK of Suwon-si (KR) for samsung electronics co., ltd., Sangwon PARK of Suwon-si (KR) for samsung electronics co., ltd., Jaeha PARK of Suwon-si (KR) for samsung electronics co., ltd., Heewon SON of Suwon-si (KR) for samsung electronics co., ltd., Kyungduk LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/07, G06F12/02
CPC Code(s): G06F11/0772
Abstract: a method of operating a storage device including a storage controller and non-volatile memories includes detecting, by the storage controller, an event of a first non-volatile memory among the non-volatile memories, generating, by the storage controller, event information based on the detected event and transmitting, by the storage controller, the event information including an event type to the first non-volatile memory, generating, by the first non-volatile memory, internal information or data of the first non-volatile memory as debugging data in response to the event information, storing the debugging data by the first non-volatile memory, and updating, by the first non-volatile memory, an event flag to indicate a certain event type based on the event information.
Inventor(s): Sungwon JEONG of Suwon-si (KR) for samsung electronics co., ltd., Moonsang KWON of Suwon-si (KR) for samsung electronics co., ltd., Younghoi HEO of Uijeongbu-si (KR) for samsung electronics co., ltd., Jaeshin LEE of Seoul (KR) for samsung electronics co., ltd., Eun JUNG of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/10, G06N20/00
CPC Code(s): G06F11/1004
Abstract: a storage device and an operating method thereof are provided. the storage device includes a non-volatile memory and a storage controller. the storage controller includes a command and address generator, an error detection module, and an interface circuit. the command and address generator generates a first command, an address, and a second command, the second command including an error detection signal for detecting a communication error in the first command and the address. the error detection module generates the error detection signal from the first command and the address. the interface circuit sequentially transmits the first command, the address, and the second command to the non-volatile memory. the first command indicates a type of a memory operation to be performed in the non-volatile memory, and the second command corresponds to a confirm command.
Inventor(s): Boram HWANG of Suwon-si (KR) for samsung electronics co., ltd., Chulmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunjoon CHA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/10, G06F11/07
CPC Code(s): G06F11/1016
Abstract: according to various embodiments, an electronic device comprises: at least one processor; and memory operatively connected to the at least one processor, wherein the memory may store instructions which, when executed by the at least one processor, cause the electronic device to: obtain, from a kernel, at least one address for a first memory area accessible through the kernel; store the at least one address in a second memory area accessible through a hypervisor; based on obtaining an address stored in a kernel stack from the kernel, identify whether the obtained address is defective, on the basis of the at least one stored address; and restore the defective address using at least one address stored in the second memory area in response to identifying the defect in the address.
Inventor(s): Jihong KIM of Suwon-si (KR) for samsung electronics co., ltd., Yongkoo JEONG of Suwon-si (KR) for samsung electronics co., ltd., Jooyoung KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/10, G06F11/07
CPC Code(s): G06F11/1068
Abstract: a storage device includes a non-volatile memory device that includes memory blocks each including one or more memory cells, a combo integrated circuit (ic) that includes a temperature sensor and a memory, and a controller that is connected with the combo ic through first channels and controls the non-volatile memory device to write or read data in or from selected memory cells. when the controller determines that a first event occurs based on temperature data read from the combo ic, the controller records first event data in the memory of the combo ic. in a first operation mode, the combo ic outputs the first event data to the controller through the first channels. in a second operation mode, under control of an external host, the combo ic outputs the first event data to the external host through second channels different from the first channels.
Inventor(s): Seongmuk KANG of Suwon-si (KR) for samsung electronics co., ltd., KYUNG-HO LEE of Suwon-si (KR) for samsung electronics co., ltd., MYUNGKYU LEE of Suwon-si (KR) for samsung electronics co., ltd., KI-HEUNG KIM of Suwon-si (KR) for samsung electronics co., ltd., KYOMIN SOHN of Suwon-si (KR) for samsung electronics co., ltd., KIJUN LEE of Suwon-si (KR) for samsung electronics co., ltd., SUNGHYE CHO of Suwon-si (KR) for samsung electronics co., ltd., HYONGRYOL HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/10, G11C7/06, G11C7/10, G11C7/12, G11C29/42
CPC Code(s): G06F11/1068
Abstract: a memory device includes an ecc circuit that performs error correction code (ecc) encoding on input data to generate write data, and a memory cell array including a plurality of memory cells that stores the write data. the ecc circuit includes a data splitter that splits the input data into first sub-data and second sub-data, a first ecc encoder that performs ecc encoding on the first sub-data to generate first sub-parity data, a second ecc encoder that performs ecc encoding on the second sub-data to generate second sub-parity data, and a data scrambler that performs a data scrambling operation with respect to the first sub-data, the second sub-data, the first sub-parity data, and the second sub-parity data based on a structure of the memory cell array to generate the write data.
Inventor(s): Jae-Eon Jo of Suwon-si (KR) for samsung electronics co., ltd., Rohyoung Myung of Suwon-si (KR) for samsung electronics co., ltd., Hans Gustav Åhlman of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/36
CPC Code(s): G06F11/3644
Abstract: an electronic device includes: one or more processors; a memory storing instructions configured to cause the one or more processors to: install instrumentation points in respective tasks of an application, the instrumentation points including a source instrumentation point installed in a source task and a target instrumentation point installed in a target task, wherein the source task and the target task are configured to execute in parallel on the one or more processors, and wherein each task includes a respective sequence of instructions executable by the one or more processors, and determine a measure of a causal relationship between the source instrumentation point and the target instrumentation point based on observation of a delay in the target instrumentation point induced by a delay amount generated by the source instrumentation point.
Inventor(s): Haitao HU of SHAANXI (CN) for samsung electronics co., ltd., Zhu FU of SHAANXI (CN) for samsung electronics co., ltd., Huan GUO of SHAANXI (CN) for samsung electronics co., ltd., Hao YAN of SHAANXI (CN) for samsung electronics co., ltd., Zhenan TANG of SHAANXI (CN) for samsung electronics co., ltd.
IPC Code(s): G06F11/36
CPC Code(s): G06F11/3684
Abstract: a black-box fuzzing testing method includes: generating a plurality of testcases; executing a target program based on each of the generated testcases to obtain a plurality of execution results; determining a plurality of execution paths of the target program using the execution results; and determining a code coverage of the target program from the execution paths.
Inventor(s): Sang-Won PARK of Suwon-si (KR) for samsung electronics co., ltd., Jooyong PARK of Suwon-si (KR) for samsung electronics co., ltd., Seokmin YOON of Suwon-si (KR) for samsung electronics co., ltd., Bongsoon LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/02, G06F13/16
CPC Code(s): G06F12/023
Abstract: disclosed is a memory system including a memory device and a memory controller. the memory device includes a package of a first memory chip configured to receive input/output signals through first input/output pads and a second memory chip having second input/output pads connected to the first input/output pads by a mapping connection. the memory controller configured to provide the input/output signals to the memory device. the second memory chip is configured to receive input/output signals different from the input/output signals provided by the memory controller to the first memory chip due to the mapping connection. the first and second memory chips are configured to selectively ignore the input/output signals provided by the memory controller based on the mapping connection.
Inventor(s): Cheolgyu JIN of Suwon-si (KR) for samsung electronics co., ltd., Jinhwan BAIK of Suwon-si (KR) for samsung electronics co., ltd., Jaeun PARK of Suwon-si (KR) for samsung electronics co., ltd., Jonghun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F17/15
CPC Code(s): G06F17/15
Abstract: an electronic apparatus is provided. the electronic device includes acquiring padding data corresponding to the input data in case of acquiring a convolution calculation instruction for the input data, identifying a calculation processing unit based on a size of the buffer and a size of the padding data, classifying the input data and the padding data into a plurality of target regions based on the calculation processing unit and the sizes of the buffers, storing one target region among the plurality of target regions in the first buffer, the second buffer or the third buffer, acquiring target data for the convolution calculation convolution calculation based on the calculation processing unit and the plurality of target regions, and controlling the convolution calculation module to perform the convolution calculation convolution calculation based on the target data and kernel data.
Inventor(s): ABDUR RAKHEEB of BENGALURU (IN) for samsung electronics co., ltd., SUDHAKAR GAJJAVARAPU of BENGALURU (IN) for samsung electronics co., ltd., ABHISHEK GHOSH of BENGALURU (IN) for samsung electronics co., ltd.
IPC Code(s): G06F30/392, G06F30/327
CPC Code(s): G06F30/392
Abstract: a method of optimizing area of logic cells includes creating a plurality of terminator cells for the logic cell, wherein the logic cell includes a plurality of cells. the plurality of terminator cells are placed at the boundary or edge of the logic cells.
Inventor(s): Hyung-Dal KWON of Suwon-si (KR) for samsung electronics co., ltd., Youngmin OH of Suwon-si (KR) for samsung electronics co., ltd., Bosun HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F30/392, G06F30/398
CPC Code(s): G06F30/392
Abstract: an apparatus with circuit designing may include: one or more processors configured to: generate an initial solution set based on nodes and edges comprised in a graph corresponding to a circuit to be optimized; generate a crossover solution by performing a crossover operation based on a plurality of solutions comprised in the initial solution set; perform a first change of positions of nodes comprised in the crossover solution by performing a mutation operation on the crossover solution; and generate a target circuit structure by performing a second change of the positions of the first changed nodes based on lengths of the edges connecting the nodes.
Inventor(s): Eunsang Jang of Hwaseong-si (KR) for samsung electronics co., ltd., Junho Kim of Seoul (KR) for samsung electronics co., ltd., Inhyuk Kim of Hanam-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06K19/07, G06K19/077, H02M3/335
CPC Code(s): G06K19/0718
Abstract: an internal voltage generation circuit of a smart card to perform fingerprint authentication and a smart card includes a first contact switch, a second contact switch, a switched capacitor converter and a bidirectional switched capacitor converter. the first contact switch selectively switches a contact voltage to a first node based on a first switching enable signal, in a contact mode. the second contact switch selectively switches the contact voltage to a second node based on a second switching enable signal, in the contact mode. the bidirectional switched capacitor converter steps down a first driving voltage of the first node to provide a second voltage to the second node in the contactless mode and either steps down the first driving voltage or boosts a second driving voltage of the second node based on a level of the contact voltage to provide a boosted voltage to the first node in the contact mode.
Inventor(s): GyuBum HAN of Suwon-si (KR) for samsung electronics co., ltd., Jehun JEON of Suwon-si (KR) for samsung electronics co., ltd., Jangsu LEE of Suwon-si (KR) for samsung electronics co., ltd., Jiseung JEONG of Suwon-si (KR) for samsung electronics co., ltd., Inkyu CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/045, G06N3/048
CPC Code(s): G06N3/045
Abstract: a method of expanding a knowledge graph and an electronic device for performing the method are provided. the electronic device includes a processor and the processor is configured to train a first neural network to extract the triplet using the training data, to compare quality of the trained first neural network to a threshold value using the validation data, to extract a new triplet by inputting the text data to the trained first neural network, to measure a first confidence of the new triplet using the trained first neural network, to measure a second confidence of the new triplet using a trained second neural network using a triplet labeled to the training data and a triplet labeled to the validation data, and to expand the knowledge graph based on the first confidence and the second confidence.
Inventor(s): Jung Ho AHN of Seoul (KR) for samsung electronics co., ltd., Sun Jung LEE of Seoul (KR) for samsung electronics co., ltd., Jae Wan CHOI of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/0455
CPC Code(s): G06N3/0455
Abstract: a device including processors configured to execute instructions and memories storing the instructions, which when executed by the processors configure the processors to perform an operation for training a transformer model having a plurality of encoders and a plurality of decoders by configuring the processors to identify the batches of training data into a plurality of micro-batches, select layer pairs for the plurality of micro-batches, assemble a processing order of the layer pairs, determining resource information to be allocated to the layer pairs, and allocate resources to the layer pairs based on the determined resource information to be allocated to the layer pairs, dependent con the processing order of the layer pairs.
Inventor(s): Srinivas Soumitri MIRIYALA of Bengaluru (IN) for samsung electronics co., ltd., Efthymia TSAMOURA of Bengaluru (IN) for samsung electronics co., ltd., Shah Ayub QUADRI of Bengaluru (IN) for samsung electronics co., ltd., Vikram Nelvoy RAJENDIRAN of Bengaluru (IN) for samsung electronics co., ltd., Venkappa MALA of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): G06N3/047, G06N7/01
CPC Code(s): G06N3/047
Abstract: a method and an electronic device for neuro-symbolic learning of an artificial intelligence (ai) model are provided. the method includes receiving input data including various contents and determining in an output of the ai model a predicted probability for each of the contents of the input data, determining a neural loss of the ai model by comparing the predicted probability with a predefined desired probability, determining a symbolic loss for the ai model by comparing the predicted probability with a pre-determined undesired probability, determining weights of a plurality of layers of the ai model, and updating the weights of the plurality of layers of the ai model based on the neural loss and the symbolic loss.
Inventor(s): Jung-Hoon CHUN of Suwon-si (KR) for samsung electronics co., ltd., Jiho SONG of Suwon-si (KR) for samsung electronics co., ltd., Yoonmyung LEE of Suwon-si (KR) for samsung electronics co., ltd., Jua LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/063
CPC Code(s): G06N3/063
Abstract: an electronic device with neural network circuitry is provided. the neural network circuit includes a synaptic memory cell including a memory element disposed along an output line and configured to, dependent on the memory element and an input signal applied to an input line, generate a column signal on the output line; a reference memory cell comprising a reference memory element disposed along a reference line, and configured to, dependent on the reference memory element and the input signal, generate a reference signal on the reference line; and a first neuron circuit configured to generate an output signal based on the column signal and the reference signal, and determine a start voltage of an integration to be performed based on the output signal in response to a previous firing by the first neuron circuit with respect to a previous input signal or another firing performed by a second neuron circuit.
Inventor(s): Dohwan LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyuhong KIM of Seoul (KR) for samsung electronics co., ltd., Jaejoon HAN of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/08, G06F18/214, G06F18/23213, G06F18/2413, G06F18/40, G06V10/82, G06V40/16
CPC Code(s): G06N3/08
Abstract: an on-device training-based user recognition method includes performing on-device training on a feature extractor based on reference data corresponding to generalized users and user data, determining a registration feature vector based on an output from the feature extractor in response to the input of the user data, determining a test feature vector based on an output from the feature extractor in response to an input of test data, and performing user recognition on a test user based on a result of comparing the registration feature vector to the test feature vector.
Inventor(s): Gunhee KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyuntae CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/084, G06N3/045
CPC Code(s): G06N3/084
Abstract: a processor-implemented method may include generating respective first neural network differential data by differentiating a respective output of each layer of a first neural network with respect to input data provided to the first neural network that estimates output data from the input data, by a forward propagation process of the first neural network, generating, using a second neural network, an output differential value of the output data with respect to the input data using the respective first neural network differential data, and training the first neural network and the second neural network based on ground truth data of the output data and ground truth data of the output differential value.
Inventor(s): Taegeon UM of Suwon-si (KR) for samsung electronics co., ltd., Minhyeok Kweun of Suwon-si (KR) for samsung electronics co., ltd., Byungsoo Oh of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/091
CPC Code(s): G06N3/091
Abstract: an electronic device and a controlling method of the electronic device are provided. the electronic device includes a communicator; at least one memory configured to store data for a neural network model; at least one first processor configured to perform a training process of the neural network model; and at least one second processor configured to: perform a plurality of preprocessing processes for the training process, determine a first operation speed of at least one preprocessing process of the plurality of preprocessing processes performed by the at least one second processor and a second operation speed of the training process performed by the at least one first processor, based on the first operation speed being slower than the second operation speed, control the communicator to transmit at least one input value for the at least one preprocessing process to an external device connected to the electronic device, and obtain an output value corresponding to the at least one input value by receiving, through the communicator, a processing result of the external device for the at least one input value from the external device.
Inventor(s): Junsang Yu of Suwon-si (KR) for samsung electronics co., ltd., Kinam Kwon of Suwon-si (KR) for samsung electronics co., ltd., Jaehyoung Yoo of Suwon-si (KR) for samsung electronics co., ltd., Sangwon Lee of Suwon-si (KR) for samsung electronics co., ltd., Hyong Euk Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T5/00, G06T5/50, G06T7/00, G06T7/90
CPC Code(s): G06T5/001
Abstract: a method, implemented by a processor, of correcting lighting of an image includes inputting an input image to a first neural network and generating predicted lighting data corresponding to lighting of the input image and embedding data corresponding to a feature of the input image, inputting the generated predicted lighting data, the generated embedding data, and sensor data to a second neural network and generating a lighting weight corresponding to the input image, and generating correction lighting data for the input image by applying the generated lighting weight to preset basis lighting data corresponding to the input image.
Inventor(s): Gyehyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Beomseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Youjin LEE of Suwon-si (KR) for samsung electronics co., ltd., Taeyoung JANG of Suwon-si (KR) for samsung electronics co., ltd., Youngo PARK of Suwon-si (KR) for samsung electronics co., ltd., Yongsup PARK of Suwon-si (KR) for samsung electronics co., ltd., Sangmi LEE of Suwon-si (KR) for samsung electronics co., ltd., Kwangpyo CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T5/60, G06T5/50
CPC Code(s): G06T5/60
Abstract: provided are an image processing method and an input processing device based on a neural network, the method including: obtaining a feature map distinguishing between a near object and a distant object of a low-resolution input image, obtaining a composited weight map for the low-resolution input image by inputting the feature map to a first deep neural network (dnn), obtaining a first image by inputting the low-resolution input image to a second dnn suitable for restoring a distant object, obtaining a second image by inputting the low-resolution input image to a third dnn suitable for restoring a near object, and obtaining a high-resolution image for the low-resolution input image by performing weighted averaging on the first image and the second image using the composited weight map.
Inventor(s): Yingen Xiong of Mountain View CA (US) for samsung electronics co., ltd., Christopher A. Peri of Mountain View CA (US) for samsung electronics co., ltd.
IPC Code(s): G06T5/00, G06T3/00, G06T19/00, G06V10/56
CPC Code(s): G06T5/006
Abstract: a method includes obtaining an image captured by a see-through camera of a video see-through (vst) augmented reality (ar) device. the method also includes identifying a first distortion created by at least one see-through camera lens and identifying a second distortion created by at least one display lens of the vst ar device. the method further includes determining a combined distortion based on the first distortion and the second distortion. the method also includes pre-warping the image to offset the combined distortion such that the image is not distorted when the pre-warped image is viewed by a user through the at least one display lens of the vst ar device. in addition, the method includes presenting the pre-warped image to the user on at least one display of the vst ar device.
Inventor(s): Fang LIU of Xi'an (CN) for samsung electronics co., ltd., Fengtao XIE of Xi'an (CN) for samsung electronics co., ltd., Fangfang DU of Xi'an (CN) for samsung electronics co., ltd., Ke LU of Xi'an (CN) for samsung electronics co., ltd., Pengfei ZHAO of Xi'an (CN) for samsung electronics co., ltd.
IPC Code(s): G06T7/11, G06V10/764
CPC Code(s): G06T7/11
Abstract: a method and an electronic device with image data generating are disclosed. the electronic device includes: one or more processors; and memory storing instructions configured to cause the one or more processors to: input an input image to a target model that performs segmenting on the input image to generate a segmented image whose pixels have respective class labels predicted by the target model, calculate an optimization value for the input image based on the segmented image and based on a class label of a first grid area among a plurality of grid areas of a guide image, and optimize the input image based on the optimization value.
Inventor(s): Rajan Laxman Joshi of San Diego CA (US) for samsung electronics co., ltd., Youngkwon Lim of Allen TX (US) for samsung electronics co., ltd., Madhukar Budagavi of Plano TX (US) for samsung electronics co., ltd.
IPC Code(s): G06T9/00
CPC Code(s): G06T9/001
Abstract: an apparatus includes a communication interface configured to receive a compressed bitstream having sub-bitstreams including a base mesh sub-bitstream, a displacement sub-bitstream, and an attributes sub-bitstream. the apparatus also includes a processor operably coupled to the communication interface. the processor is configured to decode at least a portion of the compressed bitstream, wherein the processor is configured to decode a plurality of submeshes from the base mesh sub-bitstream, decode geometry data from the displacement sub-bitstream, and decode attributes data from the attributes sub-bitstream. the processor is also configured to subdivide a submesh of the plurality of submeshes to generate a subdivided submesh. the processor is also configured to reconstruct vertex positions, using the decoded geometry data, and attributes, using the decoded attributes data, of the subdivided submesh independently of decoded data corresponding to one or more other submeshes.
Inventor(s): Dimple SHARMA of Noida (IN) for samsung electronics co., ltd., Dewesh Deo SINGH of Noida (IN) for samsung electronics co., ltd., Sattdeepan DUTTA of Noida (IN) for samsung electronics co., ltd.
IPC Code(s): G06T11/00, G06F40/205, G06F40/35, G06N3/094, G10L15/18
CPC Code(s): G06T11/00
Abstract: a method for generating one or more emoticons for one or more users with respect to one or more fictional characters is provided. the method includes receiving a first image generated by a multiple localized discriminator (mld) generative adversarial network (gan) based on a set of features from multiple sets of features associated with the one or more fictional characters, resulting in generation of an output value associated with each of the plurality of discriminators, determining a weight associated with each of the plurality of discriminators based on a distance between each discriminator and the set of features, generating an image info-graph associated with the first image generated by the mld gan upon receiving the first image, calculating a relevance associated with each of the plurality of discriminators based on the image info-graph, the set of features and the distance, and generating a plurality of images representing a plurality of emoticons associated with the one or more fictional characters based on each of the multiple sets of features.
Inventor(s): Hwajun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T19/00, G06F3/01, G06F3/16
CPC Code(s): G06T19/00
Abstract: according to an embodiment, at least one processor of a wearable device may display, based on an input for entering a virtual space, on a display the virtual space. the at least processor may display within the virtual space a first avatar which is a current representation of a user and has a first appearance. the at least processor may display within the virtual space a first avatar together with a visual object for a second avatar which is a previous representation of the user and has a second appearance different from the first appearance of the first avatar. for example, the metaverse service is provided through a network based on 5g (fifth generation), and/or 6g (sixth generation).
Inventor(s): Yibo Xu of Plano TX (US) for samsung electronics co., ltd., Weidi Liu of Houston TX (US) for samsung electronics co., ltd., Hamid R. Sheikh of Allen TX (US) for samsung electronics co., ltd., John Seokjun Lee of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): G06V10/70, G06T5/00, G06V10/60
CPC Code(s): G06V10/70
Abstract: a method includes obtaining an under-display camera (udc) image captured using a camera located under a display. the method also includes processing, using at least one processing device of an electronic device, the udc image based on a machine learning model to restore the udc image. the method further includes displaying or storing the restored image corresponding to the udc image. the machine learning model is trained using (i) a ground truth image and (ii) a synthetic image generated using the ground truth image and a point spread function that is based on an optical transmission model of the display.
Inventor(s): Jaeyong Ju of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V10/774, G06T7/80, G06V10/82, G06V20/70, H04N23/90
CPC Code(s): G06V10/774
Abstract: provided is a computer-implemented method of training a neural network model by augmenting images representing objects. the method includes: obtaining a first object recognition result predicted by a first neural network model using, as an input, a first image captured by a first camera capturing, from a first viewpoint, a space including at least one object; converting the obtained first object recognition result, based on a conversion relationship between a first camera coordinate system corresponding to the first camera and a second camera coordinate system corresponding to a second camera capturing, from a second viewpoint, the space; generating, based on the first object recognition result converted with respect to the second viewpoint, training data by performing labeling on a second image that corresponds to the first image, the second image being captured by the second camera; and training a second neural network model by using the generated training data.
Inventor(s): Ilhyun CHO of Suwon-si (KR) for samsung electronics co., ltd., Wookhyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jayoon KOO of Suwon-si (KR) for samsung electronics co., ltd., Namuk KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V10/82, G06T3/40
CPC Code(s): G06V10/82
Abstract: an electronic apparatus includes a memory configured to store a neural network model including a first network and a second network. the electronic apparatus also includes at least one processor connected to the memory. the at least one processor is configured to obtain description information corresponding to a first image by inputting the first image to the first network, obtain a second image based on the description information, obtain a third image representing a region of interest of the first image by inputting the first image and the second image to the second network. the neural network model is a model trained based on a plurality of sample images, a plurality of sample description information corresponding to the plurality of sample images, and a sample region of interest of the plurality of sample images.
Inventor(s): Jaeeun KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungyong JOO of Suwon-si (KR) for samsung electronics co., ltd., Jiwon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/00, G09G5/10
CPC Code(s): G09G3/006
Abstract: a display device according to an embodiment includes a display, a first power module that outputs a first power, and a second power module that outputs a second power. the first power and the second power are supplied to the display. the first power module is configured to cut off the first power when an amount of input current exceeds an overload criterion, to identify whether the second power module is abnormal based on the second power, and to change the overload criterion from a first threshold current amount to a second threshold current amount that exceeds the first threshold current amount, in an abnormal state of the second power module
20240233608. DISPLAY DRIVING CIRCUIT_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Youngseob CHOI of Suwon-si (KR) for samsung electronics co., ltd., Kunhyung Kwon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/20, G06F3/01
CPC Code(s): G09G3/2096
Abstract: provided is a display driving circuit for driving a display panel. the display driving circuit includes: an interface configured to receive, from a sensor hub including an acceleration sensor, an acceleration sensing signal of the acceleration sensor, and a processor configured to: calculate a number of steps based on the acceleration sensing signal; generate sensing image data based on the number of steps; and control a display panel to display an image indicating the number of steps.
Inventor(s): Ying-Da Chang of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Chulho Choi of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Yu-Chieh Huang of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Ching-Chieh Wu of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Hajoon Shin of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Zhen-Guo Ding of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Jia-Way Chen of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Kyunlyeol Lee of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Yongjoo Song of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/20
CPC Code(s): G09G3/2096
Abstract: a gamma tap circuit includes: (i) a first gamma division circuit configured to generate a first gamma tap voltage by performing voltage division of an upper gamma tap voltage and a lower gamma tap voltage, in-sync with a first clock signal ck and a first complementary clock signal ck, which is 180� out-of-phase relative to ck, (ii) a second gamma division circuit configured to generate a second gamma tap voltage by performing voltage division of the upper gamma tap voltage and the first gamma tap voltage, in-sync with a second clock signal ck and a second complementary clock signal ck, which is 180� out-of-phase relative to ck, and (iii) a third gamma division circuit configured to generate a third gamma tap voltage by performing voltage division of the first gamma tap voltage and the lower gamma tap voltage, in response to ck and ck, which have a lower frequency relative to ck and ck
Inventor(s): Doyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongkeun KIM of Suwon-si (KR) for samsung electronics co., ltd., Heehyo YANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/34, G09G3/36
CPC Code(s): G09G3/3406
Abstract: a display apparatus is disclosed. the present display apparatus comprises: a display panel; a backlight unit configured to provide light to the display panel by using a plurality of light-emitting elements; a driver configured to provide a driving current to the plurality of light-emitting elements on the basis of an amplitude of a driving voltage; a memory storing information on an amplitude of a driving voltage according to a plurality of brightnesses for each resistance value of an output resistor connected to the driver; and a processor configured to set a resistance value of the output resistor on the basis of a brightness value of the display panel, identify an amplitude of the driving voltage corresponding to the brightness value of the display panel from among amplitudes of the driving voltage according to the plurality of brightnesses corresponding to the set resistance value on the basis of the information stored in the memory, and apply the driving voltage of the identified amplitude to the driver, wherein an amplitude of the driving current is determined on the basis of the amplitude of the driving voltage and the resistance value of the output resistor.
Inventor(s): Jisun CHOI of Suwon-si (KR) for samsung electronics co., ltd., Kyungtae Kim of Suwon-si (KR) for samsung electronics co., ltd., Gajin Song of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/18, G10L15/22, G10L15/30
CPC Code(s): G10L15/1815
Abstract: disclosed are an electronic device and a response processing method for a user of the electronic device. the electronic device includes a processor and a memory storing instructions. when the instructions are executed by the processor, the instructions may cause the electronic device to receive a user input. when the instructions are executed by the processor, the instructions may cause the electronic device to extract a first intent, a second intent, and a third intent from user input in order of reception of utterances. when the instructions are executed by the processor, the instructions may cause the electronic device to output a first response, a second response, and a third response respectively corresponding to the first intent, the second intent, and the third intent by arranging the response in a different order from the order of reception of utterances based on respective domains of the first intent, the second intent, and the third intent.
Inventor(s): Manjunath Belgod LOKANATH of Bengaluru (IN) for samsung electronics co., ltd., Vinay Vasanth PATAGE of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): G10L15/22
CPC Code(s): G10L15/22
Abstract: a method for identifying and executing a voice command in a continuous listening internet of things (iot) environment, may include: receiving, by at least one iot device, a voice input in the continuous listening iot environment; detecting, by the at least one iot device, an occurrence of at least one non-speech event in a vicinity of at least one other iot device in the continuous listening iot environment; determining, by the at least one iot device, an ambient context associated with the at least one non-speech event; determining, by the at least one iot device, a correlation between the ambient context and the at least one other iot device based on an event location of the occurrence of the at least one non-speech event; and determining, by the at least one iot device, presence of at least one voice command within the voice input based on the correlation.
Inventor(s): Kyunghak HYUN of Suwon-si (KR) for samsung electronics co., ltd., Kyungtae KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/22, G02B27/01, G06F3/01, G06F3/04817, G06F3/0488
CPC Code(s): G10L15/22
Abstract: an electronic device is provided. the electronic device includes a microphone. the electronic device includes a display. the electronic device includes a processor. the processor is configured to display, via the display, a screen including a plurality of executable objects. the processor is configured to enable the microphone for the executable object based on an executable object focused on among the plurality of executable objects, and display at least one visual object indicating that the microphone is enabled for receiving an input on the executable object among the plurality of executable objects, via the display. the processor is configured to identify whether a voice signal obtained via the microphone while the at least one visual object is displayed corresponds to a voice command allocated to the executable object. the processor is configured to execute a function of the executable object associated with the voice command, based on the voice signal corresponding to the voice command.
Inventor(s): Kyunghwa SEO of Suwon-si (KR) for samsung electronics co., ltd., Seonho KIM of Suwon-si (KR) for samsung electronics co., ltd., Yeongjune CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11B27/031, G06F3/04817
CPC Code(s): G11B27/031
Abstract: an electronic device according to various embodiments includes: a display; a memory; and a processor. the processor is configured to execute instructions to perform operations including: display a preview of media content in a first area of the display, display at least one frame corresponding to the media content in a second area of the display, select at least one object contained within the first area, determine a frame segment corresponding to the object in response to the selection, and display the frame segment visually distinct from other segments.
Inventor(s): Dongkeon CHOI of Suwon-si (KR) for samsung electronics co., ltd., Kyung-Ho SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jaesub KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C5/14
CPC Code(s): G11C5/14
Abstract: disclosed is a storage device capable of dynamically operating idle power in consideration of a workload type and an operating method therefor.
Inventor(s): HOON SHIN of Suwon-si (KR) for samsung electronics co., ltd., JAEWOOK LEE of Seoul (KR) for samsung electronics co., ltd., DONGHWEE KIM of Suwon-si (KR) for samsung electronics co., ltd., RIHAE PARK of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G11C7/12, G11C7/08, G11C7/10, G11C7/14
CPC Code(s): G11C7/12
Abstract: a memory device and an operating method of a memory controller are described in which the operating method includes determining that a not operation for data of a cell is to be performed by the memory device; forming, in a bit line connected to the cell, a reference voltage between a first voltage corresponding to the data and a second voltage corresponding to inversion data of the data; forming, in the bit line, a third voltage between the second voltage and the reference voltage by connecting the bit line and a bit line bar; forming the reference voltage in the bit line bar; and sensing the inversion data based on the third voltage formed in the bit line and the reference voltage formed in the bit line bar, wherein the inversion data comprises an output of the not operation for the data of the cell.
Inventor(s): Myungkyu Lee of Suwon-si (KR) for samsung electronics co., ltd., Eunae Lee of Suwon-si (KR) for samsung electronics co., ltd., Sunghye Cho of Suwon-si (KR) for samsung electronics co., ltd., Kyomin Sohn of Suwon-si (KR) for samsung electronics co., ltd., Kijun Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/406, G06F12/02
CPC Code(s): G11C11/406
Abstract: a semiconductor memory device includes a memory cell array with a plurality of rows of memory cells therein, and a row hammer management (rhm) circuit including a hammer address queue. the rhm circuit is configured to: (i) receive first access row addresses from an external memory controller during a reference time interval, (ii) store a first row address randomly selected from the first access row addresses and second row addresses consecutively received from the memory controller after selecting the first row address, in the hammer address queue as candidate hammer addresses, and (iii) sequentially output the candidate hammer addresses as a hammer address. a refresh control circuit is provided to receive the hammer address and to perform a hammer refresh operation on one or more victim memory cell rows, which are physically adjacent to a memory cell row corresponding to the hammer address.
Inventor(s): Jungmin YOU of Hwaseong-si (KR) for samsung electronics co., ltd., Wonhyung SONG of Osan-si (KR) for samsung electronics co., ltd., Hoyoun KIM of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/406, G11C11/4093, G11C11/4096
CPC Code(s): G11C11/40615
Abstract: a memory device including: a memory cell array including memory cell rows; and a control logic circuit to perform a row, write, read, or pre-charge operation on the memory cell rows in response to an active, write, read, or pre-charge command, wherein the control logic circuit is further configured to: calculate a first count value by counting the active command and a second count value by counting the write command or the read command, with respect to a first memory cell row, during a row hammer monitor time frame; determine a type of row hammer of the first memory cell row based on a ratio of the first count value to the second count value; and adjust a pre-charge preparation time between an active operation and the pre-charge operation, by changing a pre-charge operation time point according to the determined type of row hammer.
Inventor(s): Jongpil Son of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/406, G11C11/408
CPC Code(s): G11C11/40618
Abstract: disclosed is a semiconductor memory device that includes a memory cell array including a plurality of memory banks, a command decoder configured to decode a per-bank refresh command and a remaining bank refresh command received from an external source, and a refresh controller configured to control the cell array to perform a per-bank refresh operation for refreshing one memory bank among the plurality of memory banks that is based on a decoding result of the per-bank refresh command of the command decoder, wherein the refresh controller is configured to perform a remaining bank refresh operation for refreshing remaining memory banks other than the one memory bank among the plurality of memory banks, in response to the remaining bank refresh command during one refresh cycle.
Inventor(s): Hijung KIM of Suwon-si (KR) for samsung electronics co., ltd., Hoyoun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jungmin YOU of Suwon-si (KR) for samsung electronics co., ltd., Seongjin CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/406, G06F7/544, G11C11/408, G11C11/4094
CPC Code(s): G11C11/40622
Abstract: a memory device includes a memory cell array including a plurality of memory cells connected to a plurality of wordlines and a plurality of bitlines, a target row refresh logic circuit configured to select a target row address from among a plurality of target row addresses as a refresh row address based on victim point values, and perform a refresh operation on first memory cells of the plurality of memory cells connected to a wordline of the plurality of wordlines indicated by the refresh row address, a victim point table configured to store the victim point values for the target row addresses, and a victim point accumulator configured to receive a first row address from an external device, and accumulate a first victim point value for at least one target row address corresponding to the first row address during a unit time period.
Inventor(s): Jayang YOON of Suwon-si (KR) for samsung electronics co., ltd., Chihyun Kim of Suwon-si (KR) for samsung electronics co., ltd., Sangwan Nam of Suwon-si (KR) for samsung electronics co., ltd., Chiweon Yoon of Suwon-si (KR) for samsung electronics co., ltd., Hyeongdo Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4074, G11C11/4076, G11C11/4099
CPC Code(s): G11C11/4074
Abstract: disclosed is a memory device in which at least one word line or bit line is charged by a plurality of charging terminals. the memory device includes a first charging terminal for supplying a first voltage to the at least one word line or bit line, and a second charging terminal for suppling a second voltage to the at least one word line or bit line when voltage supply by the first charging terminal is completed. the supply of the second voltage starts when a charged voltage of the at least one word line or bit line, charged by using the first voltage, satisfies a first reference condition.
Inventor(s): Seunghwan Hong of Suwon-si (KR) for samsung electronics co., ltd., Jang-Woo Ryu of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4076, G06F1/12, G11C11/408, H03K3/037, H03K19/20
CPC Code(s): G11C11/4076
Abstract: a semiconductor device includes a chip select signal flip-flop configured to: latch a chip select signal in-sync with a first propagation clock signal, and output a first chip select enable signal, and latch the chip select signal in-sync with a second propagation clock signal having a phase opposite to a phase of the first propagation clock signal, and output a second chip select enable signal; and a clock control circuit configured to generate the first propagation clock signal and the second propagation clock signal based on a clock signal, and selectively output one of the first propagation clock signal and the second propagation clock signal based on an enable level of the first chip select enable signal and an enable level of the second chip select enable signal.
Inventor(s): DONGGEON KIM of Suwon-si (KR) for samsung electronics co., ltd., BOK-YEON WON of Suwon-si (KR) for samsung electronics co., ltd., SELYUNG YOON of Suwon-si (KR) for samsung electronics co., ltd., JONGHYUK KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4091, G11C11/4094, G11C11/4096
CPC Code(s): G11C11/4091
Abstract: a bit line sense amplifier of a semiconductor memory device includes: sense amplifier blocks including a pmos driver or an nmos driver that detects and amplifies a signal difference between a bit line and a complimentary bit line, and sequentially arranged in a bit line extending direction; column selection units that connect the bit line and a local input/output line according to a first column selection signal; complimentary column selection units that connect the complimentary bit line and a complimentary local input/output line according to a second column selection signal; column selection lines that transmit the first column selection signal to each of the column selection units; and complimentary column selection lines that transmit the second column selection signal to each of the complimentary column selection units. the column selection units and the complimentary column selection units may be disposed to be distributed between the sense amplifier blocks.
Inventor(s): Hyunjun KIM of Suwon-si (KR) for samsung electronics co., ltd., Sekeon Kim of Seoul (KR) for samsung electronics co., ltd., Seongook Jung of Seoul (KR) for samsung electronics co., ltd., Kyeongrim Baek of Seoul (KR) for samsung electronics co., ltd., Keonhee Cho of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4096, G11C5/06, G11C11/4074
CPC Code(s): G11C11/4096
Abstract: a memory cell array of an sram including: a top memory cell array including top memory cells; and a bottom memory cell array including bottom memory cells, the top memory cells include: a first top memory cell between a power supply voltage and a middle node, and connected to a first top wordline, a first top bitline and a first top complementary bitline, the bottom memory cells include: a first bottom memory cell to operate with the first top memory cell, connected between the middle node and a ground voltage, and connected to a first bottom wordline, a first bottom bitline and a first bottom complementary bitline, and when write and read operations are not performed on the first top and bottom memory cells, the first top bitline, the first top complementary bitline, the first bottom bitline and the first bottom complementary bitline are connected to the middle node.
20240233824. INTEGRATED CIRCUIT DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Myunghun LEE of Seongnam-si (KR) for samsung electronics co., ltd., Sangwan NAM of Hwaseong-si (KR) for samsung electronics co., ltd., Taemin OK of Cheonan-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/04, G11C16/26, H01L23/528, H10B41/27, H10B41/40, H10B41/50, H10B43/10, H10B43/20, H10B43/27, H10B43/40, H10B43/50
CPC Code(s): G11C16/0483
Abstract: an integrated circuit device includes a peripheral circuit structure including a lower substrate, an arc protection diode in the lower substrate, and a common source line driver connected to the arc protection diode, a conductive plate on the peripheral circuit structure, a cell array structure overlapping the peripheral circuit structure in a vertical direction with the conductive plate therebetween, and a first wiring structure connected between the arc protection diode and the conductive plate.
Inventor(s): Byungkyu CHO of Suwon-si (KR) for samsung electronics co., ltd., Hyunkook PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/22, G11C16/10
CPC Code(s): G11C16/22
Abstract: an operating method of a non-volatile memory device including a plurality of cell strings connected to a plurality of word lines, string select lines, and ground select lines includes applying a program voltage to a selected word line among the word lines during a program execution period, determining a discharge voltage by comparing the program voltage with a negative discharge reference voltage during the program execution period, applying a precharge voltage, which is less than the program voltage and greater than the discharge voltage, to the string select lines up to a first time point during a verify period following the program execution period, and applying the discharge voltage to a substrate of a string select transistor, which is connected to an unselected string select line among the string select lines, up to a second time point after the first time point during the verify period.
Inventor(s): Eunchan Lee of Suwon-si (KR) for samsung electronics co., ltd., Jungyu Lee of Suwon-si (KR) for samsung electronics co., ltd., Yumin Kim of Suwon-si (KR) for samsung electronics co., ltd., Jihyun Park of Suwon-si (KR) for samsung electronics co., ltd., Jayang Yoon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/34, G11C16/04, G11C16/08, G11C16/10, G11C16/24
CPC Code(s): G11C16/3495
Abstract: a device includes a first current mirror circuit including a plurality of first transistors, the plurality of first transistors including a common gate configured to receive a decoding signal according to a number of fail bits that are program-failed, a second current mirror circuit including a plurality of second transistors including a common gate configured to receive a reference current signal and a plurality of resistors respectively electrically connected to respective first terminals of the second transistors, and a comparison circuit configured to determine a compared result by comparing a first voltage corresponding to the decoding signal with respective ones of a plurality of second voltages output from the second current mirror circuit and configured to output a count signal corresponding to the compared result.
Inventor(s): Jayang YOON of Suwon-si (KR) for samsung electronics co., ltd., Seongjin KIM of Suwon-si (KR) for samsung electronics co., ltd., Chihyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Junehong PARK of Suwon-si (KR) for samsung electronics co., ltd., Hyeongdo CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C29/12
CPC Code(s): G11C29/12005
Abstract: a word line defect detection circuit configured to detect a defect of at least one word line selected from a plurality of word lines of a memory device includes a current generating circuit configured to generate a detection reference current having a first magnitude and to apply the detection reference current to the selected word line, and a sensing amplifier configured to measure a voltage of the selected word line generated based on the detection reference current. the word line defect detection circuit may be configured to detect a defect of the selected word line in response to the voltage of the selected word line having a value less than a first reference voltage.
Inventor(s): Makoto Hirano of Suwon-si (KR) for samsung electronics co., ltd., Jongmin Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C29/32, G11C7/10, G11C29/12, G11C29/20
CPC Code(s): G11C29/32
Abstract: a nonvolatile memory device includes a control logic configured to generate a clock signal and a page buffer selection signal including information about a ratio of a number of page buffers on which a fail bit counting operation is performed to a total number of the plurality of page buffers, a fail bit counting circuit configured to select one or more page buffers from among the plurality of page buffers, repeat the fail bit counting operation on the selected one or more page buffers, and output a value of a number of fail bits with respect to the page buffers on which the fail bit counting operation is performed, and a predictor configured to generate a prediction value with respect to a total number of fail bits with respect to the plurality of page buffers.
Inventor(s): Kuihan Ko of Suwon-Si (KR) for samsung electronics co., ltd., Sang-Won Park of Suwon-Si (KR) for samsung electronics co., ltd., Won-Taeck Jung of Suwon-Si (KR) for samsung electronics co., ltd., Heewon Son of Suwon-Si (KR) for samsung electronics co., ltd., Bongsoon Lim of Suwon-Si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C29/56
CPC Code(s): G11C29/56004
Abstract: a memory device includes a memory cell array, a reference generating circuit, a row decoding circuit that is connected to the memory cell array through word lines, a page buffer circuit that is connected to the memory cell array through bit lines, a data input/output circuit that is connected to the page buffer circuit through a data line, a buffer circuit, a control logic circuit that performs logic sequences, based on the internal clock signal and the internal power, and a test mode circuit. when the memory device enters a test mode, the test mode circuit disables a part of components of the reference generating circuit. in the test mode, the control logic circuit performs the logic sequences by using an external clock signal provided from an external device.
Inventor(s): Dmytro APALKOV of San Jose CA (US) for samsung electronics co., ltd., Roman CHEPULSKYY of Milpitas CA (US) for samsung electronics co., ltd., Jaewoo JEONG of San Jose CA (US) for samsung electronics co., ltd., FNU IKHTIAR of San Jose CA (US) for samsung electronics co., ltd., Sungchul LEE of Osan-Si (KR) for samsung electronics co., ltd.
IPC Code(s): H01F10/32, G11C11/16, H10B61/00, H10N50/10, H10N50/85
CPC Code(s): H01F10/3286
Abstract: a perpendicular shape anisotropy magnetic tunnel junction structure includes a reference layer, a non-magnetic layer, and a free layer. the reference layer includes a first side and a second side opposite the first side. the non-magnetic spacer includes a first side and a second side. the first side of the non-magnetic spacer is on the second side of the first reference layer. the free layer includes a first side and a second side. the first side of the free layer is on the second side of the non-magnetic spacer. the free layer includes a first layer on the first side of the free layer, a second layer on the second side of the free layer and a coupling layer disposed between the first layer and the second layer. a ratio of a saturation magnetization of the second layer to a saturation magnetization of the first layer ranges from 0.2-0.8 inclusive.
Inventor(s): Narae HAN of Suwon-si (KR) for samsung electronics co., ltd., Jeonggyu SONG of Suwon-si (KR) for samsung electronics co., ltd., Beomseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Cheheung KIM of Suwon-si (KR) for samsung electronics co., ltd., Haeryong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jooho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01G4/10, H01L29/51, H01L29/94, H10B12/00
CPC Code(s): H01G4/10
Abstract: a semiconductor device includes a first electrode, a second electrode spaced apart from the first electrode, a dielectric layer between the first electrode and the second electrode and including a metal oxide represented by mo, and a leakage current reducing layer on the dielectric layer between the first electrode and the second electrode and including an inorganic compound represented by allox, where a, b, m, l, x, x1, x2, y1, and y2 are as described in the description.
20240234093. SUBSTRATE PROCESSING APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sejin OH of Suwon-si (KR) for samsung electronics co., ltd., Dougyong Sung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32174
Abstract: a substrate processing apparatus includes a chamber including an upper chamber defining a first plasma region for generating first plasma and a lower chamber defining a second plasma region for generating second plasma; a substrate support below the first and second plasma regions in the lower chamber, and configured to support a substrate; distribution plates between the first and second plasma regions in the upper chamber, and configured to inject ions included in the first plasma onto the substrate; a first plasma generating device on a side of the upper chamber and configured to generate the first plasma from a first process gas; a second plasma generating device on a side of the lower chamber and configured to generate the second plasma from a second process gas; and a controller that alternately operates the first plasma generating device and the second plasma generating device.
Inventor(s): Changho KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeongmo KANG of Suwon-si (KR) for samsung electronics co., ltd., Illsang KO of Suwon-si (KR) for samsung electronics co., ltd., Dooyoung GWAK of Suwon-si (KR) for samsung electronics co., ltd., Kyungsun KIM of Suwon-si (KR) for samsung electronics co., ltd., Namkyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Yirop KIM of Suwon-si (KR) for samsung electronics co., ltd., Jihwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungbo SHIM of Suwon-si (KR) for samsung electronics co., ltd., Minyoung HUR of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32183
Abstract: provided is a plasma control method including applying gas to a chamber having a wafer loaded therein, generating plasma by applying both radio frequency (rf) power associated with a first voltage at a first frequency and a second voltage at a second frequency that is lower than the first frequency to the chamber for a first time, cutting off the rf power after the first time elapses, continuously applying the second voltage of the second frequency to the chamber for a second time, cutting off the second voltage after the second time elapses, continuously maintaining an off state of the rf power and an off state of the voltage for a third time, and performing an etching process on the wafer by using the plasma formed by the rf power and the second voltage after the third time elapses, wherein the rf power is a sine wave, and the second voltage is a square wave of a periodic pulse form.
Inventor(s): Nam Jin CHO of Suwon-si (KR) for samsung electronics co., ltd., Yi Hwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Sang Chul HAN of Suwon-si (KR) for samsung electronics co., ltd., Sang Ki NAM of Suwon-si (KR) for samsung electronics co., ltd., Jun Ho LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyun Jae LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01J37/32, C23C16/26, C23C16/48
CPC Code(s): H01J37/3244
Abstract: a method for fabricating a semiconductor device includes loading a substrate into a lower region in a chamber separated by a shower head into the lower region and an upper region, supplying a source gas to the upper region, generating plasma including ions and radicals in the upper region, using a magnetic field and an electric field generated from an antenna on the upper region, and the source gas, supplying the ions and the radicals generated in the upper region into the lower region through a plurality of plasma inlet holes formed to penetrate the shower head in a vertical direction, supplying a process gas into the lower region through a plurality of process gas supply holes formed in the shower head, and forming a deposition film on the substrate inside the lower region, using the ions, the radicals and the process gas.
Inventor(s): Hyunsu Hwang of Suwon-si (KR) for samsung electronics co., ltd., Unbyoung Kang of Suwon-si (KR) for samsung electronics co., ltd., Jumyong Park of Suwon-si (KR) for samsung electronics co., ltd., Dongjoon Oh of Suwon-si (KR) for samsung electronics co., ltd., Hyunchul Jung of Suwon-si (KR) for samsung electronics co., ltd., Sanghoo Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32642
Abstract: a ring assembly is used in a semiconductor wafer etching device in which a plasma gas flow stream line is not uniform and which surrounds a wafer support plate supporting a semiconductor wafer. the ring assembly includes: an edge ring protruding from at least one side of the semiconductor wafer to have an upper surface higher than an upper surface of the semiconductor wafer; and a shadow ring movable up and down above the edge ring and configured to be tilted with respect to the semiconductor wafer.
Inventor(s): Junhee CHOI of Seongnam-si (KR) for samsung electronics co., ltd., Vladmir MATIAS of Santa Fe NM (US) for samsung electronics co., ltd., Joohun HAN of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/02
CPC Code(s): H01L21/02502
Abstract: a single crystal semiconductor includes a strain compensation layer; an amorphous substrate disposed on the strain compensation layer; a lattice matching layer disposed on the amorphous substrate and including two or more single crystal layers; and a single crystal semiconductor layer disposed on the lattice matching layer, the lattice matching layer including a direction control film disposed on the amorphous substrate and including a single crystal structure, and a buffer layer including a material different from that of the direction control film, the buffer layer being disposed on the direction control film and including a single crystal structure.
Inventor(s): Sung Hyup KIM of SUWON-SI (KR) for samsung electronics co., ltd., Seok Ryul KIM of SUWON-SI (KR) for samsung electronics co., ltd., Se Bin CHOI of SUWON-SI (KR) for samsung electronics co., ltd., Jae Hyeon SON of SUWON-SI (KR) for samsung electronics co., ltd., Jae-Youn WI of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/304, H01L21/66
CPC Code(s): H01L21/304
Abstract: a wafer polishing method is provided for semiconductor fabrication. the wafer polishing method includes calculating a wear profile of a polishing pad using operation parameters of a pad conditioner, generating a regression model for the wear profile of the polishing pad, and controlling the pad conditioner to condition the polishing pad based on the regression model.
Inventor(s): Won Keun CHO of Suwon-si (KR) for samsung electronics co., ltd., Dong Hoon KWON of Suwon-si (KR) for samsung electronics co., ltd., Ki Hoon JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/321, H01L21/67, H01L21/677
CPC Code(s): H01L21/3212
Abstract: a substrate processing device includes a platen, a polishing pad disposed on the platen, a first rotating body, a second rotating body spaced apart from the first rotating body, a caterpillar module disposed on a portion of the polishing pad and engaged with the first rotating body and the second rotating body, and a temperature controller thermally connected to the caterpillar module.
Inventor(s): Yuseon HEO of Suwon-si (KR) for samsung electronics co., ltd., Junhyeong Park of Suwon-si (KR) for samsung electronics co., ltd., Jieun Park of Suwon-si (KR) for samsung electronics co., ltd., Jihye Shim of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/48, H01L23/31, H01L23/498, H01L25/18, H10B80/00
CPC Code(s): H01L21/4857
Abstract: provided is a method of manufacturing a semiconductor package, the method including forming a first wiring structure, coating a high transmittance photoresist on the first wiring structure a plurality of number of times, forming a plurality of openings by exposing and developing the high transmittance photoresist, forming a plurality of conductive posts by filling the plurality of openings with a conductive material, removing the high transmittance photoresist, disposing a semiconductor chip on the first wiring structure, forming an encapsulant surrounding the semiconductor chip and the plurality of conductive posts, and forming a second wiring structure on the encapsulant, wherein the light transmittance of the high transmittance photoresist at a portion where the first wiring structure and the high transmittance photoresist contact each other is greater than or equal to 3.2%.
20240234177. WAFER PROCESSING APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hun Yong PARK of Suwon-si (KR) for samsung electronics co., ltd., Yeon Tae KIM of Suwon-si (KR) for samsung electronics co., ltd., Jang Hwi LEE of Suwon-si (KR) for samsung electronics co., ltd., Sang Woo BAE of Suwon-si (KR) for samsung electronics co., ltd., Kyung Su KIM of Suwon-si (KR) for samsung electronics co., ltd., Tae Soon PARK of Suwon-si (KR) for samsung electronics co., ltd., Jung Chul LEE of Suwon-si (KR) for samsung electronics co., ltd., Sung Ho JANG of Suwon-si (KR) for samsung electronics co., ltd., Won Don JOO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/67, C23C16/44, C23C16/452, H01L21/02
CPC Code(s): H01L21/67115
Abstract: a wafer processing apparatus may include a chamber providing an internal space; and a first rib on an outer side of a first sidewall of the chamber. an outer side of the first rib may include a first portion and a second portion. a light transmittance of the first portion may be different from a light transmittance of the second portion.
Inventor(s): Kyungwook HWANG of Suwon-si (KR) for samsung electronics co., ltd., Youngtek Oh of Suwon-si (KR) for samsung electronics co., ltd., Dongkyun Kim of Suwon-si (KR) for samsung electronics co., ltd., Junsik Hwang of Suwon-si (KR) for samsung electronics co., ltd., Minchul Yu of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/67
CPC Code(s): H01L21/67132
Abstract: provided are a wiper for transferring a micro semiconductor chip and an apparatus for collecting a micro semiconductor chip. the wiper includes an absorber for absorbing a solution used to wet transfer a micro semiconductor chip, and a protective layer coated on the absorber.
20240234193. WAFER PROCESSING APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Youngho Hwang of Suwon-si (KR) for samsung electronics co., ltd., Sanghyun Lim of Suwon-si (KR) for samsung electronics co., ltd., Jaehong Lim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/683, H01L21/67, H01L21/687
CPC Code(s): H01L21/6838
Abstract: provided is a wafer processing apparatus including a plate having a plurality of support pins configured such that a wafer is mounted on the plurality of support pins and a plurality of vacuum ports positioned between the plurality of support pins, a heater configured to heat the plate, a flow regulator configured to provide a vacuum pressure for fixing the wafer to the plurality of vacuum ports, and configured to adjust a flow rate of a fluid flowing into the plurality of vacuum ports to be a target flow rate, and a chuck controller configured to control the target flow of the fluid set in the flow regulator, wherein the chuck controller is configured to generate a flow control signal for reducing the target flow rate of the fluid and send the flow control signal to the flow regulator during a heating process of the wafer.
Inventor(s): Keetae KIM of Suwon-si (KR) for samsung electronics co., ltd., Seulgi YUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/8234, H01L29/40
CPC Code(s): H01L21/82345
Abstract: a method of manufacturing a semiconductor device includes forming a gate insulation layer on a substrate having first and second regions. a first gate electrode layer is formed on the gate insulation layer in the first and second regions. a first sacrificial layer pattern is formed on the first gate electrode layer in the second region. a second gate electrode layer is formed on the first gate electrode layer in the first region and the first sacrificial layer pattern in the second region. the second gate electrode layer and the first sacrificial layer pattern in the second region are removed to form a first gate electrode including the gate insulation layer, the first gate electrode layer and the second gate electrode layers stacked on each other in the first region, and a second gate electrode including the first gate electrode layer on the gate insulation layer in the second region.
Inventor(s): Donggap SHIN of Suwon-si (KR) for samsung electronics co., ltd., Yongin LEE of Suwon-si (KR) for samsung electronics co., ltd., Wooyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Bumki MOON of Suwon-si (KR) for samsung electronics co., ltd., Jiwon MOON of Suwon-si (KR) for samsung electronics co., ltd., Seungdae SEOK of Suwon-si (KR) for samsung electronics co., ltd., Siwoong WOO of Suwon-si (KR) for samsung electronics co., ltd., Byeongtak PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, H01L23/00
CPC Code(s): H01L22/12
Abstract: an apparatus for measuring an adhesion force, the apparatus comprising a stage configured to support a specimen, and a sensor adhered to the specimen, wherein the sensor detects the adhesion force of the specimen, the adhesion force of the specimen being a force for detaching the sensor from the specimen.
Inventor(s): Inkeun BAEK of Suwon-si (KR) for samsung electronics co., ltd., Suhwan PARK of Suwon-si (KR) for samsung electronics co., ltd., Ikseon JEON of Suwon-si (KR) for samsung electronics co., ltd., Namil KOO of Suwon-si (KR) for samsung electronics co., ltd., Ingi KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaeho KIM of Suwon-si (KR) for samsung electronics co., ltd., Junbum PARK of Suwon-si (KR) for samsung electronics co., ltd., Sunhong JUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, G01N21/95
CPC Code(s): H01L22/12
Abstract: provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer, and a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves to obtain data including information about the first electromagnetic wave and the second electromagnetic wave, and separating a first pulse of the first electromagnetic wave and a second pulse of the second electromagnetic wave from each other in the data and obtaining property data of the target layer.
Inventor(s): Youngtek OH of Suwon-si (KR) for samsung electronics co., ltd., Joonyong PARK of Suwon-si (KR) for samsung electronics co., ltd., Kyungwook HWANG of Suwon-si (KR) for samsung electronics co., ltd., Dongkyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongho KIM of Suwon-si (KR) for samsung electronics co., ltd., Sanghoon SONG of Suwon-si (KR) for samsung electronics co., ltd., Minchul YU of Suwon-si (KR) for samsung electronics co., ltd., Junsik HWANG of sUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, H01L21/683, H01L25/16
CPC Code(s): H01L22/22
Abstract: a method of transferring a micro semiconductor chip and a transferring structure are provided. the method includes providing a plurality of base transferring substrates each including a plurality of grooves, aligning the plurality of base transferring substrates on a first substrate, aligning the plurality of base transferring substrates on a second substrate, providing a target transferring structure by transferring micro semiconductor chips to the base transferring substrates of the first substrate, and providing a preliminary transferring structure by transferring micro semiconductor chips to the base transferring substrates of the second substrate.
Inventor(s): Changui Hong of Suwon-si (KR) for samsung electronics co., ltd., Minho Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, G01R31/52, G01R31/64, H01L23/498
CPC Code(s): H01L22/32
Abstract: a substrate includes a first input/output region; a first input pad provided in the first input/output region; a first output pad provided in the first input/output region; a first mounting region; a first positive pad provided in the first mounting region and connected to the first input pad; a first negative pad provided in the first mounting region connected to the first output pad; a second positive pad provided in the first mounting region; a second negative pad provided in the first mounting region; a second mounting region; a third positive pad provided in the second mounting region and connected to the second positive pad; a third negative pad provided in the second mounting region and connected to the second negative pad; a fourth positive pad provided in the second mounting region; a fourth negative pad provided in the second mounting region; a second input/output region; a second input pad provided in the second input/output region and connected to the fourth positive pad; and a second output pad provided in the second input/output region and connected to the fourth negative pad.
20240234250. INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sangkoo KANG of Suwon-si (KR) for samsung electronics co., ltd., Wookyung YOU of Suwon-si (KR) for samsung electronics co., ltd., Minjae KANG of Suwon-si (KR) for samsung electronics co., ltd., Koungmin RYU of Suwon-si (KR) for samsung electronics co., ltd., Hoonseok SEO of Suwon-si (KR) for samsung electronics co., ltd., Woojin LEE of Suwon-si (KR) for samsung electronics co., ltd., Junchae LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L21/762, H01L21/768, H01L27/088
CPC Code(s): H01L23/481
Abstract: an integrated circuit (ic) device includes a substrate, a pair of fin-type active regions protruding from the substrate to define a trench region on the substrate, the fin-type active regions extending in a first lateral direction, a pair of source/drain regions on the fin-type active regions, respectively, a device isolation film in the trench region, the device isolation film apart from the substrate in a vertical direction, an etch stop structure filling at least a portion of the trench region between the substrate and the device isolation film, a via power rail between the pair of fin-type active regions and between the pair of source/drain regions, the via power rail passing through at least a portion of the etch stop structure, and a backside power rail passing through the substrate, the backside power rail in contact with one end of the via power rail.
Inventor(s): HYUNGJUN JEON of SUWON-SI (KR) for samsung electronics co., ltd., KWANGJIN MOON of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L23/00, H01L23/498, H01L25/065
CPC Code(s): H01L23/481
Abstract: a semiconductor package includes a first chip and a second chip bonded to and electrically connected to a front surface of the first chip. the first chip includes a first semiconductor substrate including a first through via, a semiconductor element positioned on a front surface of the first semiconductor substrate, and a back side wiring layer including a back side power wiring positioned on a rear surface of the first semiconductor substrate and electrically connected to the semiconductor element unit. the second chip includes a second through via having a size greater than a size of the first through via.
20240234253. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Wookyung YOU of Suwon-si (KR) for samsung electronics co., ltd., Yeonggil KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangkoo KANG of Suwon-si (KR) for samsung electronics co., ltd., Minjae KANG of Suwon-si (KR) for samsung electronics co., ltd., Koungmin RYU of Suwon-si (KR) for samsung electronics co., ltd., Hoonseok SEO of Suwon-si (KR) for samsung electronics co., ltd., Woojin LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L23/00, H01L25/065, H01L27/088, H01L29/06, H01L29/08, H01L29/423, H01L29/66, H01L29/775, H01L29/786
CPC Code(s): H01L23/481
Abstract: a semiconductor device includes: a device structure including a first semiconductor substrate and having an active pattern extending in first direction, a conductive through-via electrically connected to a front wiring layer and penetrating through the first semiconductor substrate, wherein the first semiconductor substrate has a non-planarized lower surface in which a peripheral region around the conductive through-via curves downward, a first bonding structure having a planarized insulating layer disposed on the second surface of the first semiconductor substrate and having a planarized upper surface.
Inventor(s): Bongwee YU of Suwon-si (KR) for samsung electronics co., ltd., Junho HUH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L23/00, H01L23/498, H01L25/065
CPC Code(s): H01L23/481
Abstract: an integrated circuit device including a first semiconductor chip, a plurality of signal through silicon vias (tsv), a second semiconductor chip, a plurality of signal bumps and an interposer may be provided. the signal tsvs may be in the first semiconductor chip by a first pitch. the second semiconductor chip may be on the first semiconductor chip. the signal bumps may be on a lower surface of the second semiconductor chip by a second pitch wider than the first pitch. the interposer may be interposed between the first semiconductor chip and the second semiconductor chip and may be electrically connecting the signal tsvs with the signal bumps. thus, an occupying area of the signal tsvs in the first semiconductor chip may be decreased so that the integrated circuit device may have a smaller size.
Inventor(s): SEUNGWAN SHIN of Suwon-si (KR) for samsung electronics co., ltd., JUNGHOON KANG of Suwon-si (KR) for samsung electronics co., ltd., BYUNGMIN YU of Suwon-si (KR) for samsung electronics co., ltd., JUNG HYUN LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/31
CPC Code(s): H01L23/49811
Abstract: a semiconductor package includes: a first redistribution substrate; a semiconductor chip provided on the first redistribution substrate; a molding material molding the semiconductor chip and the first redistribution substrate; and a second redistribution substrate provided on the molding material, wherein the second redistribution substrate includes: at least one redistribution line; a metal pad; and a dielectric layer molding the at least one redistribution line and the metal pad, wherein the dielectric layer includes a marking region on the metal pad, and the metal pad includes a plurality of concave portions.
Inventor(s): DONGHYEON JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L21/48, H01L23/15
CPC Code(s): H01L23/49811
Abstract: the present disclosure relates to a semiconductor package and a manufacturing method thereof, and a manufacturing method of a semiconductor package according to an embodiment includes: preparing a glass substrate that includes a groove and a hole positioned around the groove; forming a conductive connection member to fill inside the hole of the glass substrate; attaching a semiconductor chip inside the groove of the glass substrate; forming a first redistribution structure for connection with the semiconductor chip and the conductive connection member on a first side of the glass substrate; and forming a second redistribution structure for connection with the conductive connection member on a second side of the glass substrate.
Inventor(s): Tong Suk KIM of Suwon-si (KR) for samsung electronics co., ltd., Sang Woong LEE of Suwon-si (KR) for samsung electronics co., ltd., Shle-Ge LEE of Suwon-si (KR) for samsung electronics co., ltd., Seung Soo HA of Suwon-si (KR) for samsung electronics co., ltd., Chang Ui HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L25/065, H01L25/10
CPC Code(s): H01L23/49816
Abstract: a semiconductor package, including a first structure including a ball array region on a lower surface of the first structure and an external region completely surrounding the ball array region, the ball array region including a passive element region in which solder balls are not disposed and an edge region completely surrounding the passive element region, a first semiconductor chip on an upper surface of the first structure, a passive element in the passive element region on the lower surface of the first structure, the passive element not in the edge region on the lower surface of the first structure, and a first ball array in the edge region on the lower surface of the first structure, the first ball array including two or more first power solder balls supplying power to at least one of the passive element and the first semiconductor chip.
Inventor(s): Chiwan SONG of Suwon-si (KR) for samsung electronics co., ltd., Hyunna BAE of Suwon-si (KR) for samsung electronics co., ltd., Joohyung LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaewook JUNG of Suwon-si (KR) for samsung electronics co., ltd., Seungmin BAEK of Suwon-si (KR) for samsung electronics co., ltd., Junghyun CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L23/48, H01L25/10
CPC Code(s): H01L23/49822
Abstract: a semiconductor package includes: a chip-via composite substrate including a substrate, a semiconductor chip, and a plurality of through vias, wherein the substrate has a first surface and a second surface opposite to the first surface and includes a first region and a second region around the first region, wherein the semiconductor chip is provided in the first region and has chip pads and circuit patterns that are electrically connected to the chip pads, and wherein the plurality of through vias is provided in the second region and penetrate the substrate; a first redistribution wiring layer provided on the first surface of the substrate and having first redistribution wirings that are electrically connected to the chip pads and the through vias; and a second redistribution wiring layer provided on the second surface of the substrate and having second redistribution wirings that are electrically connected to the through vias.
20240234277. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Narae SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jeong-Kyu Ha of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L25/065, H05K1/11
CPC Code(s): H01L23/49822
Abstract: a semiconductor package includes a base film that has peripheral regions extending in a longitudinal direction and an inner region disposed between the peripheral regions and extending in the longitudinal direction. a unit film package is disposed on the inner region of the base film and is defined by a cut line. dummy patterns are disposed on the peripheral regions of the base film and between the cut line and the opposite ends in the width direction. a first solder resist layer is disposed on the base film and covers the unit film package inside the cut line. in a plan view, the first solder resist layer extends in the width direction, runs across the cut line, and covers the dummy patterns.
20240234279. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Choongbin YIM of Suwon-si (KR) for samsung electronics co., ltd., Jiyong PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L23/31, H01L25/10
CPC Code(s): H01L23/49822
Abstract: a semiconductor package includes a first redistribution structure including a first redistribution layer and a first redistribution bonding pad, the first redistribution bonding pad electrically connected to the first redistribution layer, a first semiconductor chip on the first redistribution structure, and a second redistribution structure on the first semiconductor chip, the second redistribution structure including a second redistribution layer and a second redistribution bonding pad, the second redistribution layer electrically connected to the second redistribution layer. the semiconductor package includes a bonding wire electrically connecting the second redistribution bonding pad and the first redistribution bonding pad to each other, and a molding layer covering at least a portion the first semiconductor chip, the second redistribution structure, and the bonding wire on the first redistribution structure.
Inventor(s): KEUNYOUNG LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L21/48
CPC Code(s): H01L23/49838
Abstract: a semiconductor package includes a substrate. a pattern layer is disposed on a first surface of the substrate. the pattern layer includes a plurality of pads and a plating wire positioned between adjacent pads of the plurality of pads. a first protection layer is disposed on the first surface of the substrate to cover the pattern layer and expose the plurality of pads. at least one pad of the plurality of pads is physically separated from the plating wire.
20240234286. SEMICONDUCTOR PACKAGES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Eunsu Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L21/48, H01L25/10, H10B80/00
CPC Code(s): H01L23/49838
Abstract: a semiconductor package including: a front redistribution structure including an insulating layer defining an upper surface, a lower surface opposing the upper surface, and a side surface, front redistribution layers including a first redistribution layer on a first level adjacent to the lower surface and second redistribution layers on a second level higher than the first level relative to the lower surface, the second redistribution layers having an inner redistribution layer and an outer redistribution layer, a recess exposing at least a portion of the outer redistribution layer, and a dam on at least one side of the recess; connection bumps including a first bump electrically connected to the first redistribution layer and a second bump electrically connected to the outer redistribution layer within the recess; and an underfill that extends along a side surface of the second bump and a side surface of the dam within the recess.
Inventor(s): Geunwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungeun JO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L23/433, H01L25/00, H01L25/18, H10B80/00
CPC Code(s): H01L23/49838
Abstract: a semiconductor package includes: a first redistribution wiring layer having first redistribution wirings; a second redistribution wiring layer arranged on the first redistribution wiring layer, and including a first region, a second region, and a second redistribution wirings; a first semiconductor chip arranged on the first region of the second redistribution wiring layer; a plurality of second semiconductor chips spaced apart from each other on the upper surface of the second region of the second redistribution wiring layer; a plurality of third semiconductor chips arranged in the second region of the second redistribution wiring layer and spaced apart from each other between the first and second redistribution wiring layers; and a heat transfer medium arranged on the first region of the second redistribution wiring layer and overlapping the first semiconductor chip with the second redistribution wiring layer interposed between the first semiconductor chip and the heat transfer medium.
Inventor(s): Jisu Yu of Suwon-si (KR) for samsung electronics co., ltd., Jungho Do of Suwon-si (KR) for samsung electronics co., ltd., Sungyup Jung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/50, H01L23/48, H01L23/538, H01L25/16
CPC Code(s): H01L23/50
Abstract: an integrated circuit includes: a plurality of first power rails extending in a first horizontal direction and configured to provide a first power supply voltage that is applied thereto; a plurality of second power rails extending in the first horizontal direction and configured to provide a second power supply voltage that is applied thereto; and a power line in a switch cell area and extending in the first horizontal direction the power line being configured to provide a global power supply voltage that is applied thereto, wherein the plurality of first power rails and the plurality of second power rails are alternately arranged in a second horizontal direction vertical to the first horizontal direction, wherein the plurality of first power rails, the plurality of second power rails, and the power line form a front-side pattern on a same layer, and wherein the power line is provided between two second power rails adjacent to each other in the first horizontal direction, among the plurality of second power rails.
Inventor(s): Euibok LEE of Seoul (KR) for samsung electronics co., ltd., Wandon KIM of Seongnam-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/528, H01L21/311, H01L21/768
CPC Code(s): H01L23/528
Abstract: an integrated circuit (ic) device includes a first conductive line in a closed curve defining a local area on a substrate. the first conductive line has a first end portion and a second end portion. a second conductive line is outside the local area. the second conductive line has a linear line portion along the closed curve and a bulging end portion along the closed curve. the bulging end portion protrudes from the linear line portion toward the first end portion of the first conductive line in the second lateral direction and protrudes further than the first end portion to the outside of the local area. a method of manufacturing an ic device includes forming a first reference pattern having a mandrel hole. a reference spacer is formed inside the mandrel hole. a second reference pattern is formed. the second reference pattern has a shift hole.
Inventor(s): Cheoljin CHO of Hwaseong-si (KR) for samsung electronics co., ltd., Jungmin PARK of Seoul (KR) for samsung electronics co., ltd., Hanjin LIM of Seoul (KR) for samsung electronics co., ltd., Jaehyoung CHOI of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/528
CPC Code(s): H01L23/5283
Abstract: a semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode including an outer protective layer, a conductive layer between opposing sidewalls of the outer protective layer, and an inner protective layer between opposing sidewalls of the conductive layer, a first supporter pattern on a side surface of the lower electrode, the first supporter pattern including a supporter hole, a dielectric layer on a surface of each of the lower electrode and the first supporter pattern, and an upper electrode on the dielectric layer. the outer protective layer includes titanium oxide, the conductive layer includes titanium nitride, and the inner protective layer includes titanium silicon nitride. in a horizontal cross-sectional view, the outer protective layer has an arc shape that extends between the dielectric layer and the conductive layer.
Inventor(s): Jee Woong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jin Kyu KIM of Suwon-si (KR) for samsung electronics co., ltd., Ho Jun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jae Hyun AHN of Suwon-si (KR) for samsung electronics co., ltd., So Ra YOU of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/528, H01L23/48, H01L29/417, H01L29/78
CPC Code(s): H01L23/5286
Abstract: a semiconductor device having simplicity in design and improved performance and methods for fabricating the same are provided. the semiconductor device includes a substrate including a frontside and a backside opposite the frontside, an electronic device on the frontside of the substrate, an interlayer insulating layer covering the electronic device, a frontside wiring structure on the interlayer insulating layer, a backside wiring structure on the backside of the substrate, and at least one unit chain connecting the electronic device with the backside wiring structure, the unit chain including a through plug passing through the substrate, a connection contact on the interlayer insulating layer, a first chain plug passing through the interlayer insulating layer to connect the through plug with the connection contact, and a second chain plug passing through the interlayer insulating layer to be connected to the through plug.
20240234325. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): JOONGHYUN BAEK of Suwon-si (KR) for samsung electronics co., ltd., HYUNSOO CHUNG of Suwon-si (KR) for samsung electronics co., ltd., SEOK-HONG KWON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/538, H01L23/00, H01L23/498, H01L25/065, H01L25/10
CPC Code(s): H01L23/5383
Abstract: a semiconductor package includes a first redistribution layer, a first semiconductor chip, and a second semiconductor chip. the first redistribution layer includes a first intervening interconnection layer and a first upper interconnection layer. the first intervening interconnection layer includes a first intervening insulating layer, a first intervening redistribution pattern, and a stress buffer pattern, which is spaced apart from the first intervening redistribution pattern and is in an electrically floated state. the first upper interconnection layer includes a first upper insulating layer, a first upper redistribution pattern, and a first test pad on the first upper redistribution pattern. an area of the stress buffer pattern is larger than an area of the first test pad.
Inventor(s): Junseok PARK of Suwon-si (KR) for samsung electronics co., ltd., Seunghak PARK of Suwon-si (KR) for samsung electronics co., ltd., Chan HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/544, H10B41/27, H10B43/27
CPC Code(s): H01L23/544
Abstract: a semiconductor device includes a first stack structure in a first region, a first channel structure in contact with the substrate, a second stack structure on the first stack structure, a second channel structure connected to the first channel structure, a third stack structure on the second stack structure, a third channel structure connected to the second channel structure, a first mold structure in a second region, first overlay structures on the first mold structure, a second mold structure on the first mold structure, second overlay structures on the second mold structure, a third mold structure on the second mold structure, and third overlay structures on the third mold structure, wherein the first to third overlay structures are on an overlay mark region, and the first to third overlay structures are in at least one of quadrants in the overlay mark region.
20240234342. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Geunwoo KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/498
CPC Code(s): H01L23/562
Abstract: a semiconductor package includes a semiconductor chip including a semiconductor substrate having a first surface and a second surface opposite to the first surface, a chip pad located on the first surface and including a conductive layer, a support pad positioned on the first surface, spaced apart from the chip pad and including an insulating layer, a support bump connected to the support pad, a wiring substrate disposed to face the semiconductor substrate, a support bonding on trace (bot) pad disposed on the wiring substrate and bonded to the support bump, and a dummy area disposed on the wiring substrate and spaced apart from the support bot pad.
20240234343. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): NOH YEONG PARK of Suwon-si (KR) for samsung electronics co., ltd., BEOMJIN PARK of Hwaseong-si (KR) for samsung electronics co., ltd., DONG IL BAE of Seongnam-si (KR) for samsung electronics co., ltd., Sangwon BAEK of Hwaseong-si (KR) for samsung electronics co., ltd., HYUN-SEUNG SONG of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L21/02, H01L21/8238, H01L27/092, H01L29/06, H01L29/423, H01L29/66, H01L29/786
CPC Code(s): H01L23/562
Abstract: a semiconductor device may include a substrate including a first region and a second region and a first active pattern on the first region. the first active pattern may include a pair of first source/drain patterns and a first channel pattern therebetween, and the first channel pattern may include a plurality of first semiconductor patterns stacked on the substrate. the semiconductor device may further include a first gate electrode, which is provided on the first channel patterns, and a supporting pattern, which is provided on side surfaces of the plurality of first semiconductor patterns to connect the side surfaces of the plurality of first semiconductor patterns to each other.
20240234349. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): GWANGJAE JEON of Suwon-si (KR) for samsung electronics co., ltd., MINKI KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyungchul SHIN of Suwon-si (KR) for samsung electronics co., ltd., WON IL LEE of Suwon-si (KR) for samsung electronics co., ltd., HYUEKJAE LEE of Suwon-si (KR) for samsung electronics co., ltd., Enbin JO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/48
CPC Code(s): H01L24/06
Abstract: disclosed is a semiconductor package comprising lower and upper structure. the lower structure includes a first semiconductor substrate, first through vias vertically penetrating the first semiconductor substrate, first signal pads connected to the first through vias, first dummy pads between the first signal pads and electrically separated from the first through vias, and a first dielectric layer surrounding the first signal pads and the first dummy pads. the upper structure includes a second semiconductor substrate, second signal pads and second dummy pads, and a second dielectric layer surrounding the second signal pads and the second dummy pads. the first signal pad is in contact with one of the second signal pads. the first dummy pad is in contact with one of the second dummy pads. a first interval between the first dummy pads is 0.5 to 1.5 times a second interval between the first signal pads.
Inventor(s): JUNHO LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/498
CPC Code(s): H01L24/14
Abstract: the present disclosure provides a semiconductor package having a dummy solder and a manufacturing method thereof. the solder bump array is disposed on one surface of the semiconductor package, and a dummy solder is disposed point-symmetrically about a center of the solder bump array. the solder bumps have a first melting point, and the dummy solder has a second melting point lower than the first melting point so that the dummy solder melts before the solder bumps to generate a force in a direction in which the solder bump contacts the connection terminal of the external device by surface tension in a soldering process.
Inventor(s): Cheolan KWON of Suwon-si (KR) for samsung electronics co., ltd., Jingyu MOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, B23K3/02
CPC Code(s): H01L24/75
Abstract: semiconductor manufacturing equipment including a main body having a bonding head, a head heater at a bottom of the bonding head, the head heater including a thermal compression surface, negative pressure channels recessed from the thermal compression surface and the negative pressure channels including holes therein, and a bonding tool having a first surface, a second surface, grooves at the first surface, the first surface configured to contact the thermal compression surface, and the second surface opposite to the first surface contacting a semiconductor chip for thermal compression may be provided.
20240234367. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kihong JEONG of Jeonju-si (KR) for samsung electronics co., ltd., Sangsub SONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L25/18
CPC Code(s): H01L25/0652
Abstract: a semiconductor package includes a package substrate, a processor chip mounted on the package substrate, a first stack structure on the package substrate, the first stack structure including a number m of memory chips stacked on the processor chip, and a second stack structure on the package substrate and spaced apart from the processor chip, the second stack structure including a number n of memory chips stacked on the package substrate. a number q of channels that electrically connect the memory chips of the second stack structure with the processor chip may be greater than a number p of channels that electrically connect the memory chips of the first stack structure with the processor chip, or the number n of memory chips included in the second stack structure may be greater than the number m of memory chips included in the first stack structure.
20240234369. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seokgeun AHN of Cheonan-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/13, H01L25/18
CPC Code(s): H01L25/0652
Abstract: a semiconductor package is provided. the semiconductor package includes: a package substrate having a first surface, a second surface that is provided opposite the first surface and has a concave portion, and a through-hole having a side surface that is oblique with respect to the first surface, and a first diameter of a first opening of the through-hole defined through the first surface being less than a second diameter of a second opening of the through-hole defined through a bottom surface of the concave portion; a plurality of first semiconductor chips provided on the first surface; a second semiconductor chip provided on the bottom surface; and a molding portion provided in the through-hole, and covering the plurality of first semiconductor chips and the second semiconductor chip.
Inventor(s): AENEE JANG of SUWON-SI (KR) for samsung electronics co., ltd., SEUNGDUK BAEK of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L25/00, H10B80/00
CPC Code(s): H01L25/0657
Abstract: a semiconductor package includes a package substrate including a first pad; a first memory device arranged on the package substrate and including first and second semiconductor chips stacked in a vertical direction; and a first chip connecting member electrically connecting the first semiconductor chip to the package substrate. the first semiconductor chip includes a first cell structure; a first peripheral circuit structure; a first bonding pad; and a first input/output pad electrically connected to the first pad of the package substrate through the first chip connection member. the second semiconductor chip includes a second cell structure; and a second bonding pad connected to the first bonding pad. a part of the first peripheral circuit structure protrudes from a sidewall of the second semiconductor chip so as not to overlap the second semiconductor chip.
20240234374. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hyuekjae Lee of Suwon-si (KR) for samsung electronics co., ltd., Dae-Woo Kim of Seongnam-si (KR) for samsung electronics co., ltd., Eunseok Song of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L25/10, H01L25/18
CPC Code(s): H01L25/0657
Abstract: a semiconductor package includes a first semiconductor chip including a first wiring layer including a first wiring structure and providing a first rear surface, and a first through via for first through via for power electrically connected to the first wiring structure; and a second semiconductor chip including a second wiring layer including a second wiring structure and providing a second rear surface, and a second through via for second through via for power electrically connected to the second wiring structure, wherein the first and second semiconductor chips have different widths, wherein the first semiconductor chip receives power through the first wiring structure and the first through via for first through via for power, wherein the second semiconductor chip receives power through the second wiring structure and the second through via for second through via for power.
20240234376. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hyun Soo CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Young Lyong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/31, H01L23/498, H10B80/00
CPC Code(s): H01L25/0657
Abstract: a semiconductor package may include a circuit board, an interposer structure on the circuit board, a mold layer, and a first semiconductor chip and a second semiconductor chip spaced apart from each other in a first direction on a center region of the interposer structure and electrically connected to the interposer structure. the interposer structure may include a plurality of trenches in an edge region of the interposer structure and extending through the interposer structure. the mold layer may be in the plurality of trenches and may wrap the first and second semiconductor chips. the mold layer may include a penetrating portion in the plurality of trenches and a stack portion on the interposer structure. a bottom surface of the penetrating portion of the mold layer may be on a same plane as a bottom surface of the interposer structure.
20240234377. SEMICONDUCTOR PACKAGES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jinnam KIM of Suwon-si (KR) for samsung electronics co., ltd., Seokho KIM of Suwon-si (KR) for samsung electronics co., ltd., Hoonjoo NA of Suwon-si (KR) for samsung electronics co., ltd., Kwangjin MOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/48, H01L25/18
CPC Code(s): H01L25/0657
Abstract: a semiconductor package includes a first structure including a first semiconductor chip comprising a first semiconductor integrated circuit, and a second structure on the first structure. the second structure includes a second semiconductor chip including a second semiconductor integrated circuit, a semiconductor pattern horizontally spaced apart from the second semiconductor chip and on a side surface of the second semiconductor chip, an insulating pattern between the second semiconductor chip and the semiconductor pattern, and through-electrode structures. at least one of the through-electrode structures penetrates through at least a portion of the second semiconductor chip or penetrates through the semiconductor pattern. the semiconductor pattern has a first side surface facing the side surface of the second semiconductor chip and a second side surface opposing the first side surface. the second side surface of the semiconductor pattern is vertically aligned with a side surface of the first semiconductor chip.
Inventor(s): Kyungwook HWANG of Suwon-si (KR) for samsung electronics co., ltd., Youngtek OH of Suwon-si (KR) for samsung electronics co., ltd., Dongkyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongho KIM of Suwon-si (KR) for samsung electronics co., ltd., Joonyong PARK of Suwon-si (KR) for samsung electronics co., ltd., Sanghoon SONG of Suwon-si (KR) for samsung electronics co., ltd., Minchul YU of Suwon-si (KR) for samsung electronics co., ltd., Junsik HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/075
CPC Code(s): H01L25/0753
Abstract: a method of transferring electronic chips includes attaching, to a relay substrate, the electronic chips arranged on a base substrate, separating the electronic chips from the base substrate, wetting a target substrate using a solvent, transferring, to the target substrate, the electronic chips that are attached to the relay substrate, pressing the relay substrate in a thickness direction of the target substrate, and drying the target substrate.
20240234388. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Mina Choi of Suwon-si (KR) for samsung electronics co., ltd., Heejung Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/10, H01L23/00, H01L23/31, H01L23/48, H01L23/498
CPC Code(s): H01L25/105
Abstract: a first package structure including a first redistribution structure, at least one first semiconductor chip disposed on the first redistribution structure, a first encapsulant covering the at least one first semiconductor chip, and a first through-via passing through the first encapsulant; a second package structure including a second redistribution structure, at least one second semiconductor chip disposed on the second redistribution structure, a second encapsulant covering the at least one second semiconductor chip, and a second through-via passing through the second encapsulant. the second package structure is disposed on the first package structure. at least one of a first upper end of the first through-via or a second upper end of the second through-via is between a first non-active surface and a second non-active surface.
20240234417. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Byeol Hae EOM of Suwon-si (KR) for samsung electronics co., ltd., Byung Ha CHOI of Suwon-si (KR) for samsung electronics co., ltd., Keun Hwi CHO of Suwon-si (KR) for samsung electronics co., ltd., Sung Won KIM of Suwon-si (KR) for samsung electronics co., ltd., Yuri MASUOKA of Suwon-si (KR) for samsung electronics co., ltd., Won Cheol JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/092, H01L29/06, H01L29/417, H01L29/423, H01L29/775
CPC Code(s): H01L27/092
Abstract: a semiconductor device includes a first element separation structure, a second element separation structure, and a third element separation structure sequentially disposed along a first direction and extending in a second direction intersecting the first direction; a first active pattern extending in the first direction between the first element separation structure and the second element separation structure; a second active pattern extending in the first direction between the second element separation structure and the third element separation structure and separated from the first active pattern by the second element separation structure; a first gate electrode extending in the second direction on the first active pattern; and a plurality of second gate electrodes extending in the second direction on the second active pattern, wherein a width of the first active pattern in the second direction is greater than a width of the second active pattern in the second direction.
20240234452. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jung Wook LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14612
Abstract: an image sensor comprises a first sub-pixel comprising a first photoelectric conversion region, a first floating diffusion region, and a first transfer transistor to transfer charges accumulated in the first photoelectric conversion region to the first floating diffusion region; and a second sub-pixel adjacent to the first sub-pixel, and comprising a second photoelectric conversion region, a second floating diffusion region, and a second transfer transistor to transfer charges accumulated in the second photoelectric conversion region to the second floating diffusion region. the first photoelectric conversion region may comprise a first and a second sub-region partitioned by a potential level isolation region that blocks movement of charges, and the first transfer transistor may comprise a first sub-transfer transistor to transfer charges accumulated in the first sub-region to the first floating diffusion region, and a second sub-transfer transistor to transfer charges accumulated in the second sub-region to the first floating diffusion region.
20240234453. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Masato FUJITA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14614
Abstract: an image sensor, comprising a semiconductor substrate having first and second surfaces opposed to each other, a photoelectric conversion region in the semiconductor substrate, a floating diffusion region adjacent to the first surface in the semiconductor substrate, and a vertical transfer gate on the first surface of the semiconductor substrate, and extending in a direction perpendicular to the first surface and connected to the photoelectric conversion region. the vertical transfer gate may transfer photocharges collected in the photoelectric conversion region to the floating diffusion region. the vertical transfer gate includes a first vertical electrode portion and a second vertical electrode portion extending from the first surface of the semiconductor substrate in the vertical direction, and connected to the photoelectric conversion region, respectively.
Inventor(s): Je-Hyung RYU of Suwon-si (KR) for samsung electronics co., ltd., Haji LIM of Suwon-si (KR) for samsung electronics co., ltd., Jongmin JEON of Suwon-si (KR) for samsung electronics co., ltd., Taeksoo JEON of Suwon-si (KR) for samsung electronics co., ltd., Jaesung HUR of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14623
Abstract: image sensors and fabrication methods thereof are provided. an image sensor includes a semiconductor substrate including pixel regions, and a fence structure that defines openings that correspond to the pixel regions. a fence structure includes a metal pattern on the semiconductor substrate, a low-refractive pattern on the metal pattern, and a metal oxide pattern between the metal pattern and the low-refractive pattern.
Inventor(s): Minkwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Inyong Park of Suwon-si (KR) for samsung electronics co., ltd., Jinsun Pyo of Suwon-si (KR) for samsung electronics co., ltd., Beomsuk Lee of Suwon-si (KR) for samsung electronics co., ltd., Sungeun Lee of Suwon-si (KR) for samsung electronics co., ltd., In Sung Joe of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, G02B3/00
CPC Code(s): H01L27/14627
Abstract: image sensors and fabrication methods thereof. for example, the image sensor may include a first substrate having a first surface and a second surface that are opposite to each other, a plurality of pixels provided in the first substrate and arranged in pixel groups, each pixel group including four pixels arranged in two columns and two rows, a pixel separation structure in the first substrate and including a pixel group separation part that separates each pixel group from adjacent pixel groups and a pixel separation part that separates the pixels in each pixel group from each other, and a plurality of microlenses on the first surface and respectively overlapping the plurality of pixel groups. each of the microlenses includes a central part that has a first curvature and an edge part that has a second curvature. the first curvature is less than the second curvature.
20240234467. IMAGE SENSORS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jeonglim KIM of Suwon-si (KR) for samsung electronics co., ltd., Byungje JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/1463
Abstract: an image sensor includes a substrate including a plurality of pixels and a photoelectric conversion region in an inside thereof, a pixel isolation structure isolating the plurality of pixels, and an isolation layer defining a plurality of active regions in the substrate, wherein the plurality of active regions include a center part having a plurality of branching sections extending from a center toward the plurality of pixels, the center being adjacent to each of the plurality of pixels, and an extension part in the plurality of pixels and extending in a horizontal direction from the center part. in a plan view, a first angle between a side wall of the extension part and the pixel isolation structure extending in a first direction exceeds about 45 degrees, or a second angle between two adjacent branching sections among the plurality of branching sections is less than about 90 degrees.
Inventor(s): Han Seok KIM of Seoul (KR) for samsung electronics co., ltd., Byung Jun PARK of Yongin-si (KR) for samsung electronics co., ltd., Jin Ju JEON of Yongin-si (KR) for samsung electronics co., ltd., Hee Geun JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14643
Abstract: an image sensor including: a substrate which includes a first surface and a second surface opposite each other; a plurality of pixels, each pixel including a photoelectric conversion layer in the substrate; a pixel separation pattern disposed in the substrate and separating the pixels; a surface insulating layer disposed on the first surface of the substrate; conductor contacts disposed in the surface insulating layer; and a grid pattern disposed on the surface insulating layer, wherein the pixel separation pattern includes a first portion and a second portion arranged in a direction parallel to the first surface of the substrate, and the conductor contacts are interposed between the first portion of the pixel separation pattern and the grid pattern and are not interposed between the second portion of the pixel separation pattern and the grid pattern.
20240234484. SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): YAEJIN HONG of SUWON-SI (KR) for samsung electronics co., ltd., JUNRAK CHOI of SUWON-SI (KR) for samsung electronics co., ltd., JINSU LEE of SUWON-SI (KR) for samsung electronics co., ltd., JUNGWOO KANG of SUWON-SI (KR) for samsung electronics co., ltd., YIRANG LIM of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H01L28/75
Abstract: a semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate, a dielectric layer covering the lower electrodes and including a halogen element, and an upper electrode covering the dielectric layer. each of the plurality of lower electrodes includes a first electrode layer, an insertion layer disposed on the first electrode layer, and a second electrode layer disposed on the first electrode layer and the insertion layer. the insertion layer includes an insertion material including a halogen element.
Inventor(s): Jun-goo KANG of Seoul (KR) for samsung electronics co., ltd., Hyun-suk LEE of Suwon-si (KR) for samsung electronics co., ltd., Gi-hee CHO of Yongin-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01G4/30, H10B12/00
CPC Code(s): H01L28/75
Abstract: an integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. a dielectric layer contacts an outer sidewall of the main electrode part. to manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. the mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. the dielectric layer is formed to contact the outer sidewall of the main electrode part.
Inventor(s): Hyukwoo KWON of Suwon-si (KR) for samsung electronics co., ltd., Munjun KIM of Suwon-si (KR) for samsung electronics co., ltd., Junwon LEE of Suwon-si (KR) for samsung electronics co., ltd., Younseok CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H01L28/91
Abstract: a capacitor structure includes a lower electrode structure having a lower electrode on a substrate and an electrode structure including electrode patterns stacked on the lower electrode in a vertical direction substantially perpendicular to an upper surface of the substrate, a dielectric pattern contacting the lower electrode structure, and an upper electrode contacting the dielectric pattern.
20240234490. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): SHAOFENG DING of Suwon-si (KR) for samsung electronics co., ltd., JEONG HOON AHN of Seongnam-si (KR) for samsung electronics co., ltd., YUN KI CHOI of Yongin-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/768, H01L23/48, H01L23/522
CPC Code(s): H01L28/92
Abstract: a semiconductor device includes a semiconductor substrate including a connection region, a pair of epitaxial patterns provided at the semiconductor substrate, a capacitor disposed between the pair of epitaxial patterns, a middle connection layer on the capacitor, an interconnection layer on the middle connection layer, and a through-via provided under the interconnection layer and penetrating the connection region of the semiconductor substrate. the capacitor includes an upper portion of the semiconductor substrate between the pair of epitaxial patterns, a metal electrode on the upper portion of the semiconductor substrate, and a dielectric pattern disposed between the upper portion of the semiconductor substrate and the metal electrode. the through-via is connected to the capacitor through the interconnection layer and the middle connection layer.
Inventor(s): Haeryong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinho LEE of Suwon-si (KR) for samsung electronics co., ltd., Donghyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Beomseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Cheheung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jooho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L27/06, H01L29/423, H10B12/00
CPC Code(s): H01L29/0607
Abstract: provided are a capacitor and an electronic device including the same. the capacitor includes a first electrode layer, a second electrode layer, a dielectric layer disposed between the first electrode layer and the second electrode layer, and an interlayer disposed between the first electrode layer and the dielectric layer. the interlayer includes a first interface material, the first interface material includes at least one group 13 element, and the at least one group 13 element is not aluminum (al).
20240234500. SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jiho Yoo of Suwon-si (KR) for samsung electronics co., ltd., Kihyung Ko of Suwon-si (KR) for samsung electronics co., ltd., Junsoo Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyunsup Kim of Suwon-si (KR) for samsung electronics co., ltd., Jihoon Cha of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L29/66
CPC Code(s): H01L29/0653
Abstract: a semiconductor device may include an active pattern on a substrate; an isolation pattern on the substrate, the isolation pattern covering opposite sidewalls of the active pattern; a liner on the isolation pattern, a liner including a material different from the isolation pattern; a gate structure contacting an upper surface of the active pattern and an upper surface of the liner; and a plurality of channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the plurality of channels extending through the gate structure.
20240234502. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Junmo PARK of Suwon-si (KR) for samsung electronics co., ltd., Wookhyun KWON of Suwon-si (KR) for samsung electronics co., ltd., Yeonho PARK of Suwon-si (KR) for samsung electronics co., ltd., Jongmin SHIN of Suwon-si (KR) for samsung electronics co., ltd., Heonjong SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jongmin JUN of Suwon-si (KR) for samsung electronics co., ltd., Kyubong CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L29/24, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L29/0673
Abstract: a semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, a source/drain pattern, a gate electrode, and an insulation pattern. the channel pattern may include semiconductor patterns that are spaced apart from each other and vertically stacked. a lowermost one of the semiconductor patterns may be a first semiconductor pattern. the source/drain pattern may be connected to the semiconductor patterns. the gate electrode may be on the semiconductor patterns and may include a plurality of inner electrodes below the semiconductor patterns except the first semiconductor pattern. the insulation pattern may be between the first semiconductor pattern and the active pattern. the insulation pattern may include a dielectric pattern and a protection layer. the protection layer may be between the dielectric pattern and the first semiconductor pattern. the protection layer may be between the dielectric pattern and the active pattern.
Inventor(s): SOOJIN JEONG of Suwon-si (KR) for samsung electronics co., ltd., Myung Gil Kang of Suwon-si (KR) for samsung electronics co., ltd., Beomjim Park of Suwon-si (KR) for samsung electronics co., ltd., Dongwon KIm of Suwon-si (KR) for samsung electronics co., ltd., Younggwon Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyumin Yoo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L23/48, H01L27/092, H01L29/417, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L29/0673
Abstract: a semiconductor device includes a substrate including first and second active regions, a first active pattern on the first active region, a second active pattern on the second active region, a device isolation layer filling a trench between the first active pattern and the second active pattern, the device isolation layer having a concave top surface, a first gate electrode in the first active region, a second gate electrode in the second active region, a gate cutting pattern disposed between the first gate electrode and the second gate electrode and separating the first gate electrode and the second gate electrode, and an insulating pattern between the gate cutting pattern and the concave top surface of the device isolation layer.
20240234525. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jun Ki Park of Suwon-si (KR) for samsung electronics co., ltd., Sung Hwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Wan Don Kim of Suwon-si (KR) for samsung electronics co., ltd., Heung Seok Ryu of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/417, H01L21/285, H01L29/06, H01L29/40, H01L29/423, H01L29/45, H01L29/66, H01L29/775
CPC Code(s): H01L29/41733
Abstract: a semiconductor device includes an active pattern extending in a first direction, a plurality of gate structures on the active pattern spaced in the first direction, and including a gate electrode extending in a second direction, a source/drain pattern between adjacent gate structures, a silicide mask pattern on the source/drain pattern, an upper surface of the silicide mask pattern being lower than an upper surface of the gate electrode, a source/drain contact on the source/drain pattern connected to the source/drain pattern, and a contact silicide film between the source/drain contact and the source/drain pattern in contact with a bottom surface of the silicide mask pattern, wherein a height from a lowermost part of the source/drain pattern to a lowermost part of the source/drain contact is smaller than a height from the lowermost part of the source/drain pattern to the bottom surface of the silicide mask pattern.
Inventor(s): Edwardnamkyu Cho of Suwon-si (KR) for samsung electronics co., ltd., Seokhoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Jungtaek Kim of Suwon-si (KR) for samsung electronics co., ltd., Pankwi Park of Suwon-si (KR) for samsung electronics co., ltd., Sumin Yu of Suwon-si (KR) for samsung electronics co., ltd., Seojin Jeong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/66, H01L29/06, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L29/66545
Abstract: a manufacturing method of a semiconductor device, includes forming a plurality of main gate sacrificial patterns spaced apart from each other on a stacked structure of subgate sacrificial patterns and semiconductor patterns; forming a first insulating layer between main gate sacrificial patterns; removing the main gate sacrificial patterns; removing the subgate sacrificial patterns; forming a main gate dummy pattern in a space from which the main gate sacrificial patterns are removed; forming a plurality of subgate dummy patterns in a space from which the subgate sacrificial patterns are removed; forming a recess under a space where the first insulating layer is removed; forming a source/drain pattern within the recess; forming a second insulating layer on the source/drain pattern; removing the main gate dummy pattern and the subgate dummy patterns; and forming a gate electrode in a space where the main gate dummy pattern and the subgate dummy patterns are removed.
Inventor(s): Seungheon Lee of Suwon-si (KR) for samsung electronics co., ltd., Donghyun Roh of Suwon-si (KR) for samsung electronics co., ltd., Jangho Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/66, H01L21/8234, H01L27/088, H01L29/06, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L29/66545
Abstract: a method of manufacturing a semiconductor device, includes forming a mask layer on a semiconductor structure having a plurality of gate lines and a plurality of intergate insulating portions, forming an opening that exposes a cut region of the plurality of gate lines in the mask layer, forming a separation hole by removing a portion of a gate capping layer exposed by the opening, forming a pyrolysis material pattern in the separation hole, forming an etch stop layer on an upper surface of the mask layer and on a side wall portion of the separation hole from which the pyrolysis material pattern is removed, while the pyrolysis material pattern is decomposed and removed, and removing a portion of the gate electrode exposed by the separation hole using the etch stop layer.
Inventor(s): HYUN-KWAN YU of Suwon-si (KR) for samsung electronics co., ltd., SUNYOUNG LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyunwoo PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/66, H01L29/08, H01L29/49
CPC Code(s): H01L29/66553
Abstract: a semiconductor device comprises a substrate including an active pattern, a channel pattern on the active pattern, a source/drain pattern on the channel pattern, a gate electrode on the channel pattern, and a gate dielectric layer between the channel pattern and the gate electrode. the gate electrode includes an inner electrode between neighboring first and second semiconductor patterns. the gate dielectric layer includes a high-k dielectric layer that surrounds the inner electrode of the gate electrode and an inner spacer on the high-k dielectric layer. the inner spacer includes a first horizontal part between the high-k dielectric layer and the second semiconductor pattern, a first vertical part between the high-k dielectric layer and the source/drain pattern, and a first corner part that connects the first horizontal part to the first vertical part.
20240234551. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jangwoo PARK of Suwon-si (KR) for samsung electronics co., ltd., DONGWOO KIM of Suwon-si (KR) for samsung electronics co., ltd., JINBUM KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/732, H01L23/522
CPC Code(s): H01L29/732
Abstract: a semiconductor device includes first, second, and third epitaxial layers sequentially stacked on a substrate and a first diffusion prevention layer provided in at least one of regions between the first and second epitaxial layers and between the second and third epitaxial layers. the first and third epitaxial layers have a first conductivity type, and the second epitaxial layer has a second conductivity type. the first diffusion prevention layer is configured to prevent an impurity in the second epitaxial layer from being diffused. the first, second, and third epitaxial layers include first, second, and third active patterns, respectively, which are respective provided in upper portions thereof and on collector, base, and emitter regions, respectively, of the substrate.
Inventor(s): Minsu SEOL of Suwon-si (KR) for samsung electronics co., ltd., Jeeeun YANG of Suwon-si (KR) for samsung electronics co., ltd., Sangwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Kyung-Eun BYUN of Suwon-si (KR) for samsung electronics co., ltd., Eunkyu LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/76, H01L21/02, H01L29/24, H01L29/423, H01L29/66
CPC Code(s): H01L29/7606
Abstract: disclosed are a semiconductor device, a method of manufacturing the same, and an electronic element and an electronic apparatus each including the semiconductor device. the semiconductor device may include a substrate, a channel layer on the substrate, a first electrode and a second electrode on two opposite ends of the channel layer, respectively, and spaced apart from each other, a gate electrode on the channel layer and spaced apart from the first electrode and the second electrode, a gate dielectric material provided between the channel layer and the gate electrode, and a chalcogen compound layer being at least one of between the gate dielectric material and the channel layer, between the first electrode and the channel layer, and between the second electrode and the channel layer.
20240234558. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jongmin SHIN of Suwon-si (KR) for samsung electronics co., ltd., Wook Hyun KWON of Suwon-si (KR) for samsung electronics co., ltd., Su-Hyeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Jun Mo PARK of Suwon-si (KR) for samsung electronics co., ltd., Kyu Bong CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/775, H01L27/088, H01L29/06, H01L29/423
CPC Code(s): H01L29/775
Abstract: a semiconductor device includes a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern and second sheet patterns, a height of the second lower pattern being smaller than a height of the first lower pattern; a first gate structure on the first lower pattern; a second gate structure on the second lower pattern; a first source/drain pattern on the first lower pattern and connected to the first sheet patterns; and a second source/drain pattern on the second lower pattern and connected to the second sheet patterns, wherein a width of an upper surface of the first lower pattern is different from a width of an upper surface of the second lower pattern, and wherein a number of first sheet patterns is different from a number of second sheet patterns.
Inventor(s): Junyoung KWON of Suwon-si (KR) for samsung electronics co., ltd., Kyung-Eun BYUN of Suwon-si (KR) for samsung electronics co., ltd., Minsu SEOL of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/786, H01L29/06, H01L29/423, H01L29/775
CPC Code(s): H01L29/78696
Abstract: provided are a semiconductor device including a two-dimensional (2d) material and an electronic device including the semiconductor device. the semiconductor device may include a channel layer including a two-dimensional (2d) semiconductor material, a channel portion, and an extension portion on both sides of the channel portion, a source electrode and a drain electrode respectively on both sides of the channel layer, a gate electrode surrounding the channel portion, a first insulating layer between the channel portion of the channel layer and the gate electrode, and a second insulating layer on the extension portion of the channel layer. the second insulating layer may include a different material than a material of the first insulating layer. the second insulating layer may include a n-type dopant or p-type dopant. a dopant in the extension portion may be the same as a dopant in the second insulating layer.
Inventor(s): Younghwan PARK of Suwon-si (KR) for samsung electronics co., ltd., Joosung KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongchul SHIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L33/00, H01L33/08, H01L33/32, H01L33/38, H01L33/62
CPC Code(s): H01L33/0008
Abstract: the present disclosure provides light emitting devices and display apparatuses including the same. in some embodiments, a light emitting device includes a first light emitting element configured to emit light of a first wavelength, a pn junction layer provided on the first light emitting element, and a second light emitting element provided on the pn junction layer and configured to emit light of a second wavelength different from the first wavelength. the pn junction layer includes a first conductivity type semiconductor layer provided on the first light emitting element and doped with impurities of a first conductivity type, and a second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer and doped with impurities of a second conductivity type electrically opposite to the first conductivity type.
Inventor(s): Dongchul SHIN of Suwon-si (KR) for samsung electronics co., ltd., Joosung KIM of Suwon-si (KR) for samsung electronics co., ltd., Younghwan PARK of Suwon-si (KR) for samsung electronics co., ltd., Junhee CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L33/12, H01L33/06, H01L33/32
CPC Code(s): H01L33/12
Abstract: a nitride-based semiconductor light-emitting device, including a first semiconductor layer, wherein the first semiconductor layer is nitride-based and has a first conductivity type; a light-emitting layer provided on the first semiconductor layer, wherein the light-emitting layer may include a nitride-based semiconductor including indium (in); a second semiconductor layer provided on the light-emitting layer, wherein the second semiconductor layer is nitride-based and has a second conductivity type; and a strain relaxation layer provided between the first semiconductor layer and the light-emitting layer, and including an algan layer having a protrusion whose horizontal cross-section area decreases as the protrusion extends in a vertical direction from the second semiconductor layer to the first semiconductor layer.
Inventor(s): Dongchul SHIN of Suwon-si (KR) for samsung electronics co., ltd., Joosung KIM of Suwon-si (KR) for samsung electronics co., ltd., Younghwan PARK of Suwon-si (KR) for samsung electronics co., ltd., Junhee CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L33/12, H01L33/06, H01L33/20, H01L33/32
CPC Code(s): H01L33/12
Abstract: a nitride-based semiconductor light-emitting device, including a first semiconductor layer, wherein the first semiconductor layer is nitride-based and has a first conductivity type; a light-emitting layer provided on the first semiconductor layer, wherein the light-emitting layer may include a nitride-based semiconductor including indium (in); a second semiconductor layer provided on the light-emitting layer, wherein the second semiconductor layer is nitride-based and has a second conductivity type; and a strain relaxation layer provided between the first semiconductor layer and the light-emitting layer, and including an algan layer having a protrusion whose horizontal cross-section area decreases as the protrusion extends in a vertical direction from the second semiconductor layer to the first semiconductor layer.
Inventor(s): Hoyoung Jung of Suwon-si (KR) for samsung electronics co., ltd., Nari Kim of Suwon-si (KR) for samsung electronics co., ltd., Kyongtae Park of Suwon-si (KR) for samsung electronics co., ltd., Keunsik Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L33/60, H01L25/075
CPC Code(s): H01L33/60
Abstract: a display module includes: a substrate; a plurality of light emitting diodes mounted on a surface of the substrate; a partition wall formed on a surface of the substrate and configured to form a plurality of cells surrounding each of the plurality of light emitting diodes; a reflective layer formed on each of the plurality of cells, the reflective layer comprising a light exit portion forming an opening of each of the plurality of cells; and a micro-lens disposed at a location corresponding to the light exit portion and configured to concentrate light emitted from the light exit portion, wherein a width of the light exit portion may be less than a width of a space formed by the partition wall.
Inventor(s): Dongjoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Bokyung JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01M10/0567, H01M4/38, H01M4/40, H01M10/052, H01M10/0562, H01M10/0568
CPC Code(s): H01M10/0567
Abstract: a positive electrode for a solid lithium battery, including: a positive active material; and a catholyte; wherein the catholyte includes a lithium salt, an ionic liquid, and a compound represented by formula 1, an amount of the lithium salt is about 0.5 moles per liter to about 1.5 moles per liter, and the catholyte is a gel
Inventor(s): Dongjoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Bokyung JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01M10/0567, H01M4/38, H01M4/40, H01M10/052, H01M10/0562, H01M10/0568
CPC Code(s): H01M10/0567
Abstract:
Inventor(s): Kyungkyun KANG of Suwon-si (KR) for samsung electronics co., ltd., Yongsub Lee of Suwon-si (KR) for samsung electronics co., ltd., Jaeho Lim of Suwon-si (KR) for samsung electronics co., ltd., Sangmin Han of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q1/24, H01Q1/38, H01Q1/44, H04M1/02
CPC Code(s): H01Q1/243
Abstract: an electronic device includes a display, a rear cover, a first frame including a first portion in which at least one speaker hole is formed in a region and a second portion extending from the first portion in a first direction, a second frame coupled to the second portion of the first frame, a speaker disposed in a space between the second frame and the second portion of the first frame, an acoustic duct formed in the first frame, a film including a conductive pattern, and a wireless communication circuit electrically coupled to the first conductive pattern. the acoustic duct includes a first acoustic duct portion and a second acoustic duct portion, at least one region of the first film covers an entirety of the opening, and the wireless communication circuit is configured to feed power to a point of the first conductive pattern to receive a signal of a first frequency band.
Inventor(s): Dongjin JUNG of Gyeonggi-do (KR) for samsung electronics co., ltd., Chanju PARK of Gyeonggi-do (KR) for samsung electronics co., ltd., Jungi JEONG of Gyeonggi-do (KR) for samsung electronics co., ltd., Taeksun KWON of Gyeonggi-do (KR) for samsung electronics co., ltd., Jungwoo SEO of Gyeonggi-do (KR) for samsung electronics co., ltd., Junhwa OH of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q1/24, H01Q1/38, H01Q21/00
CPC Code(s): H01Q1/243
Abstract: an antenna module, according to various embodiments, may comprise: a first layer including a first etching region, a first via pad disposed to be spaced apart from an edge of the first etching region, and a first via hole disposed on one surface of the first via pad; and a second layer stacked on one surface of the first layer, and including a second etching region, a plurality of second via pads disposed to be spaced apart from an edge of the second etching region, a plurality of second via holes disposed on one surface of the plurality of second via pads, and a plurality of second dividing lines electrically connecting the plurality of second via pads.
Inventor(s): Juneseok LEE of Suwon-si (KR) for samsung electronics co., ltd., Jinsu Heo of Suwon-si (KR) for samsung electronics co., ltd., Youngsub Kim of Suwon-si (KR) for samsung electronics co., ltd., Jungho Park of Suwon-si (KR) for samsung electronics co., ltd., Kwanghyun Baek of Suwon-si (KR) for samsung electronics co., ltd., Youngju Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyoungho Jeong of Suwon-si (KR) for samsung electronics co., ltd., Dohyuk Ha of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q21/06, H01Q1/24, H01Q9/04
CPC Code(s): H01Q21/065
Abstract: according to various embodiments of the disclosure, an antenna device comprises: a first antenna array including an array of a plurality of first radiation patches, a communication circuit configured to transmit and/or receive a radio signal using at least one of the first radiation patches, and at least one first isolator comprising a conductor disposed in an area between two adjacent first radiation patches among the first radiation patches. the first isolator may include a first portion, a second portion disposed in parallel with the first portion, and a third portion electrically connecting the first portion with the second portion. the first portion and the second portion may be configured to generate current flows having a phase difference of 180 degrees with respect to each other.
Inventor(s): Eonguk Kim of Suwon-si (KR) for samsung electronics co., ltd., Chanhee Jeon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02H9/04, H03K19/0185
CPC Code(s): H02H9/04
Abstract: a semiconductor device includes: a voltage clamping circuit including a plurality of first elements operating upon receiving a voltage having a first level and configured to output a clamp signal swinging in the first level by adjusting a voltage of an external input signal swinging in a second level more than twice the first level; a first buffer circuit configured to buffer the clamp signal; a level down shifter circuit configured to reduce the voltage of the clamp signal and output an internal input signal swinging in the first level between a predetermined reference voltage and a first power supply voltage higher than the reference voltage; and a second buffer circuit configured to buffer the internal input signal and transmits the internal input signal to a core circuit.
Inventor(s): Sukjin KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangyoung CHO of Suwon-si (KR) for samsung electronics co., ltd., Eonguk KIM of Suwon-si (KR) for samsung electronics co., ltd., Chanhee JEON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02H9/04
CPC Code(s): H02H9/046
Abstract: an electrostatic discharge clamp circuit includes a resistor connected between a first node and a second node, a first capacitor connected between the second node and a third node, a second capacitor connected between a fourth node and the third node, a third capacitor connected between a fifth node and the third node, a first inverter providing a power supply voltage or a voltage of the fourth node based on a voltage of the second node, a second inverter providing an output voltage of the first inverter or a voltage of the fifth node based on the voltage of the fourth node, a third inverter configured to provide an output voltage of the second inverter or the ground voltage based on the voltage of the fifth node.
Inventor(s): Daewoong CHO of Suwon-si (KR) for samsung electronics co., ltd., Kyeseok YOON of Suwon-si (KR) for samsung electronics co., ltd., Seunghoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeongdu YOO of Suwon-si (KR) for samsung electronics co., ltd., Sungwoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Jungwook HEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02J7/00
CPC Code(s): H02J7/00304
Abstract: a circuit includes: an overcurrent limiting (ocl) detector configured to detect whether a level of an inductor current reaches an ocl level and to generate an ocl detection voltage; a control loop circuit configured to generate a reset voltage by comparing a ramp voltage reflecting the level of the inductor current with an error voltage generated based on an operating condition that is out of a preset operating condition; an adaptive ocl controller configured to generate an ocl control current by counting a number of pulses of the ocl detection voltage and a number of pulses of the reset voltage; an oscillator configured to generate an oscillation voltage wherein a frequency of the oscillation voltage varies based on a magnitude of the overcurrent limit control current; and a switching transistor for switching the inductor current based on the oscillation voltage.
Inventor(s): JUNHAN BAE of Suwon-si (KR) for samsung electronics co., ltd., DONGJOON KIM of Suwon-si (KR) for samsung electronics co., ltd., DUSEUNG OH of Suwon-si (KR) for samsung electronics co., ltd., WOONHYUNG HEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02J7/00, H02H7/18
CPC Code(s): H02J7/00308
Abstract: an electronic device including: a connector including a voltage terminal; a battery; a corruption detection circuit configured to detect whether the connector is corrupted; a voltage cutoff circuit configured to electrically connect the voltage terminal with an internal node when corruption of the connector is not detected by the corruption detection circuit and to electrically disconnect the voltage terminal from the internal node when the corruption is detected by the corruption detection circuit; a charging pin connected with the internal node, and configured to transfer a voltage of the internal node to an external device when the charging pin is connected with the external device; and a power management integrated circuit connected between the internal node and the battery, and configured to charge the battery by using the voltage of the internal node or to generate the voltage of the internal node by using a voltage of the battery.
Inventor(s): SUNGWOO LEE of SUWON-SI (KR) for samsung electronics co., ltd., SUNGWOO MOON of SUWON-SI (KR) for samsung electronics co., ltd., DAEWOONG CHO of SUWON-SI (KR) for samsung electronics co., ltd., JUNGWOOK HEO of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H02M1/084, H02J7/06, H02M1/00, H02M3/158, H02M7/5395
CPC Code(s): H02M1/0845
Abstract: a charger integrated circuit includes a switching converter and a controller. the switching converter includes a plurality of transistors including a first transistor, a second transistor, a fourth transistor, and a sixth transistor, which are serially connected to a first input/output node, a third transistor and a fifth transistor serially connected between the first connection node and the second connection node, a plurality of inductors including a first inductor connected to a node disposed between the second transistor and the fourth transistor and a load node and a second inductor connected between a node disposed between the third transistor and the fifth transistor and a second input/output node, and a capacitor connected between a first connection node and a second connection node.
Inventor(s): Wonmyung Woo of Suwon-si (KR) for samsung electronics co., ltd., Duhee Jang of Suwon-si (KR) for samsung electronics co., ltd., Jeongil Kang of Suwon-si (KR) for samsung electronics co., ltd., Hyungwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Sanghoon Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02M1/42, H02M1/38
CPC Code(s): H02M1/4225
Abstract: the present disclosure provides power supply apparatuses and controlling methods thereof. in some embodiments, a power supply apparatus includes a power factor correction (pfc) circuit, and a control circuit configured to control the pfc circuit. the pfc circuit includes a power inputter configured to receive alternating current voltage to be rectified, an inductor having an end coupled to an end of the power inputter, a first switching element configured to be turned on and off according to a first control signal, a second switching element configured to be turned on and off according to a second control signal, and an outputter configured to output a direct current voltage through an output capacitor. the control circuit is further configured to respectively apply the first and second control signals to the first and second switching elements such that the first and the second switching elements are alternately turned on.
Inventor(s): Dokyung LIM of Suwon-si (KR) for samsung electronics co., ltd., Junhyeok YANG of Suwon-si (KR) for samsung electronics co., ltd., Chanyoung JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H03B5/12
CPC Code(s): H03B5/1212
Abstract: a device includes an oscillator including at least one inductor and at least one capacitor and configured to generate, based on a positive supply voltage, an output signal oscillating in a resonance frequency of the at least one inductor and the at least one capacitor. the device further includes an oscillation detector configured to determine whether the output signal oscillates based on a clock signal and increase a loop gain of the oscillator until the output signal oscillates.
Inventor(s): Byounggon Kang of Suwon-si (KR) for samsung electronics co., ltd., Dalhee Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H03K3/037, G06F1/08, H03K19/20
CPC Code(s): H03K3/037
Abstract: a clock gating cell is provided. the clock gating cell includes: an inverter circuit configured to generate an inverted clock signal by inverting a clock signal; a first control circuit configured to receive the inverted clock signal, an enable signal, and a scan enable signal, and output a first internal signal at a first node; a second control circuit configured to receive the first internal signal, the clock signal, the enable signal, and the scan enable signal, and output a second internal signal at a second node; and an output driver configured to receive the second internal signal, and output an output clock signal to an output node and a third internal signal to a third node. the first control circuit and the second control circuit are configured to receive the third internal signal at the third node.
Inventor(s): Eonguk Kim of Suwon-si (KR) for samsung electronics co., ltd., Jinsu Jeong of Suwon-si (KR) for samsung electronics co., ltd., Chanhee Jeon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H03K19/0185, H03K3/356
CPC Code(s): H03K19/018571
Abstract: a level shifter includes: an input circuit receiving an input signal swinging between a reference voltage and a first power supply voltage having a level higher than a level of the reference voltage; an output circuit outputting an output signal swinging between a second power supply voltage having a level higher than the level of the first power supply voltage and a third power supply voltage having a level higher than the level of the second power supply voltage; and a tolerant circuit connected between the input circuit and the output circuit, and configured to limit an output voltage of the input circuit to a range between the reference voltage and the second power supply voltage.
Inventor(s): JOO-HAN KIM of SUWON-SI (KR) for samsung electronics co., ltd., JUNGSU HAN of SUWON-SI (KR) for samsung electronics co., ltd., BEOM KON KIM of SUWON-SI (KR) for samsung electronics co., ltd., JOOHYUN DO of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H03M1/06, H03M1/12
CPC Code(s): H03M1/0607
Abstract: a digital signal processing circuit includes an analog gain compensator that compensates for an analog gain of a baseband signal including a plurality of component carriers (ccs) to output a compensated baseband signal; an analog-to-digital converter (adc) that converts the compensated baseband signal into a first digital signal; a plurality of filtering circuits that generate a second digital signal from the first digital signal; and a control circuit. each filtering circuit sequentially filters the first digital signal so that a corresponding one of the second digital signals retains one cc among the ccs, compensates for a digital gain, and a performs down-sampling. the control circuit generates an analog gain control signal for controlling the analog gain based on the second digital signals and a digital gain control signal for controlling the digital gain.
Inventor(s): Hyeongseok YU of Suwon-si (KR) for samsung electronics co., ltd., Deok Jae OH of Suwon-si (KR) for samsung electronics co., ltd., Seong Wook PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H03M7/40, H03M7/30
CPC Code(s): H03M7/405
Abstract: a processor-implemented method including generating k sub-compressed data streams based on a compressed data stream for a plurality of symbols divided into a plurality of k blocks and count information for each of the plurality of k blocks, generating k sub-symbols by processing each of the k sub-compressed data streams using k decoding engines, metadata about the compressed data stream, and generating an output data stream corresponding to the plurality of symbols based on the k sub-symbols.
Inventor(s): Janghyun NAM of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyuck KWAK of Suwon-si (KR) for samsung electronics co., ltd., Hyoseok NA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B1/04, H04W76/10, H04W76/30
CPC Code(s): H04B1/04
Abstract: an electronic device may include at least one antenna, at least one rf circuit including at least one rfic, at least one pa, and at least one divider, a connection part, and at least one processor operatively connected to the connection part and the at least one rf circuit. the at least one processor may be configured to turn off the at least one pa based on a connection between the electronic device and an external electronic device (), convert, via the at least one rfic, data for transmission to the external electronic device into an rf signal, and direct the rf signal to the connection part via the at least one divider, the rf signal being directed to the external electronic device via the connection part.
20240235586. ELECTRONIC DEVICE INCLUDING COUPLER_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): John Moon of Suwon-si (KR) for samsung electronics co., ltd., Hyoseok Na of Suwon-si (KR) for samsung electronics co., ltd., Dongil Yang of Suwon-si (KR) for samsung electronics co., ltd., Doohwan Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B1/04, H03F3/24, H04B1/44
CPC Code(s): H04B1/0458
Abstract: provided is an electronic device including a transceiver configured to output a first transmission signal, a first radio frequency (rf) module configured to amplify the first transmission signal obtained from the transceiver to generate an amplified first transmission signal, a first antenna configured to transmit the amplified first transmission signal, and a main coupler provided outside the first rf module along a transmission path between the first rf module and the first antenna, and configured to output a first coupling signal corresponding to the first transmission signal. the first rf module includes at least one power amplifier configured to amplify the first transmission signal, and a switch configured to connect one of a plurality of input ports, including at least one input port connected to the main coupler and configured to receive the first coupling signal output by the main coupler, with an output port connected to the transceiver.
Inventor(s): Jonghun YOO of Suwon-si (KR) for samsung electronics co., ltd., Hyoseok NA of Suwon-si (KR) for samsung electronics co., ltd., John Moon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B1/48, H04B1/00
CPC Code(s): H04B1/48
Abstract: an electronic device includes: a processor; a first radio frequency (rf) module; a second rf module; a coupler switch operatively connected to the first rf module and the second rf module; and a transceiver operatively connected to the processor, the coupler switch, and the first rf module, and the second rf module, wherein the coupler switch is configured to selectively switch between a first path in which a first feedback signal passes through the filter and a second path in which the second feedback signal is transferred to the transceiver without passing through the filter, and wherein the processor is configured to alternately connect the coupler switch to the first path or the second path, based on an operation mode.
Inventor(s): Joung Won PARK of San Diego CA (US) for samsung electronics co., ltd., Jaehyup KIM of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): H04B3/32
CPC Code(s): H04B3/32
Abstract: systems and methods for crosstalk suppression. according to an embodiment of the present disclosure, there is provided a system, including: a first communications channel; and a first crosstalk reduction circuit, the first communications channel being a wired communications channel, and the first crosstalk reduction circuit being configured to: receive a signal from a second communications channel; and modify a signal in the first communications channel to reduce an effect of crosstalk from the second communications channel.
Inventor(s): Kyunggyu LEE of Suwon-si (KR) for samsung electronics co., ltd., Heedon GHA of Suwon-si (KR) for samsung electronics co., ltd., Taehan BAE of Suwon-si (KR) for samsung electronics co., ltd., Seongmok LIM of Suwon-si (KR) for samsung electronics co., ltd., Yeongeun LIM of Suwon-si (KR) for samsung electronics co., ltd., Youngrok JANG of Suwon-si (KR) for samsung electronics co., ltd., Hyoungju JI of Suwon-si (KR) for samsung electronics co., ltd., Kyungjun CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B7/0426, H04B7/06, H04L1/1812, H04L5/00
CPC Code(s): H04B7/0439
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by a network-controlled repeater (ncr) in a communication system is provided. the method includes receiving, from a base station via radio resource control information (rrc) message, configuration of one or more sets of forwarding resources for an access link, and receiving, from the base station, medium access control control element (mac ce) indicating a set of forwarding resources among the one or more sets of forwarding resources, wherein the set of forwarding resources includes at least one forwarding resource, wherein each of the at least one forwarding resource is associated with a time resource and a beam index, and wherein the mac ce includes a bit field indicating activation or deactivation of the set of forwarding resources.
Inventor(s): Gyoungil KWAK of Suwon-si (KR) for samsung electronics co., ltd., Jinho KIM of Suwon-si (KR) for samsung electronics co., ltd., Sunyoung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B7/0456, H04L5/00, H04L25/02
CPC Code(s): H04B7/0456
Abstract: an electronic device includes processing circuitry configured to calculate an intra metric based on cross correlation of first reference signal symbols (rss) included in a first precoding resource block group (prg) to which a target resource element (re) belongs, calculate an inter metric based on cross correlation of one or more second rss and one or more among the first rss, the one or more second rss being included in a second prg adjacent to the first prg along a frequency axis of a physical channel, the one or more second rss being in proximity to the target re, and the physical channel being received from a base station, compare a first ratio between the intra metric and the inter metric with a threshold ratio to obtain a comparison result, and determine a channel estimation mode with respect to the target re based on the comparison result.
20240235638. UE-INITIATED REPORTING_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Gilwon Lee of McKinney TX (US) for samsung electronics co., ltd., Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd., Dalin Zhu of Allen TX (US) for samsung electronics co., ltd., Emad Nader Farag of Flanders NJ (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd.
IPC Code(s): H04B7/06, H04L1/1607, H04W72/21
CPC Code(s): H04B7/0626
Abstract: apparatuses and methods for ue-initiated reporting. a method performed by a user equipment (ue) includes receiving information about (i) l events and (ii) k event types, where l≥1 and k≥1. at least one of the l events is associated with at least one of the k event types. the method further includes determining whether to transmit a report based on at least one of l′ events from the l events and transmitting, based on the determination, the report that includes an indicator indicating the l′ events.
Inventor(s): Dalin Zhu of Allen TX (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd.
IPC Code(s): H04B7/08, H04L1/1607, H04L5/00, H04W24/10, H04W76/19, H04W80/02
CPC Code(s): H04B7/088
Abstract: methods and apparatuses for beam failure recovery (bfr) in a wireless communication system. a method for operating a user equipment includes identifying configuration information for at least two beam failure detection (bfd) reference signal (rs) sets each comprising one or more bfd rss resources and configuration information for at least two new beam identification (nbi) rs sets each comprising one or more nbi rs resources. the method further includes detecting a beam failure event for one of the at least two bfd rs sets; identifying, based on measuring the one or more nbi rs resources in a nbi rs set that is associated with the one bfd rs set, one or more nbi rs resources for a new beam recovery; and triggering, in response to detection of the beam failure event for the one bfd rs set and identification of the one or more nbi rs resources, a bfr event.
Inventor(s): Jaehyun LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngjoon KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Ilju NA of Gyeonggi-do (KR) for samsung electronics co., ltd., Kitaek BAE of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04B7/145
CPC Code(s): H04B7/145
Abstract: disclosed is a method performed by a reconfigurable intelligent surface (ris) device, the method including configuring a number of fixed beams for a beam, a fixed reflection pattern for the beam, and a fixed period for the beam; and reflecting a signal based on the number of the fixed beams, the fixed reflection pattern, and the fixed period, with the fixed reflection pattern being related to an amplitude and a phase of the reflected signal.
Inventor(s): Namjun Cho of Suwon-si (KR) for samsung electronics co., ltd., Jooseung Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok Choi of Suwon-si (KR) for samsung electronics co., ltd., Hyoseok Na of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B17/13, H04B17/10, H04W4/38
CPC Code(s): H04B17/13
Abstract: an electronic device includes a network monitor configured to acquire network environment information related to a radio frequency (rf) transmission signal; a transceiver configured to generate an envelope signal of the rf transmission signal; a transmission (tx) module including a power amplifier for receiving the rf transmission signal from the transceiver and amplifying the rf transmission signal; and an envelope tracking (et) modulator configured to receive the envelope signal from the transceiver and to provide a bias of a power amplifier to correspond to the envelope signal, wherein the et modulator determines a magnitude of the bias of the power amplifier based on the network environment information acquired by the network monitor.
Inventor(s): Ameha Tsegaye ABEBE of Gyeonggi-do (KR) for samsung electronics co., ltd., Dhivagar BASKARAN of Bangalore (IN) for samsung electronics co., ltd., Youngrok JANG of Gyeonggi-do (KR) for samsung electronics co., ltd., Younsun KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Seongmok LIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Hyoungju JI of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04L5/00
CPC Code(s): H04L5/0051
Abstract: the present disclosure relates to a communication method and system for converging a 5th-generation (5g) communication system for supporting higher data rates beyond a 4th-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. the present disclosure relates to the field of 5g communication networks and more particularly to the behaviour of user equipment (ue) towards selecting a default beam and pathloss reference signal (pl-rs) for the transmission of physical uplink control channel (pucch).
Inventor(s): Emad N. Farag of Flanders NJ (US) for samsung electronics co., ltd., Kyoungmin Park of Seoul (KR) for samsung electronics co., ltd., Dalin Zhu of Richardson TX (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd., Aristides Papasakellariou of Houston TX (US) for samsung electronics co., ltd.
IPC Code(s): H04L5/00, H04W72/0446
CPC Code(s): H04L5/0053
Abstract: methods and apparatuses for methods and apparatuses for facilitating signaling of multiple timing advance (ta) values to a user equipment (ue), facilitating the use of multiple ta values by a ue for communication with multiple transmission and reception points (trps), and facilitating updating of ta values in a wireless communications network. a ue comprises a transceiver and a processor operably coupled to the transceiver. the transceiver is configured to receive a first ta command that includes a first ta value and a first ta group (tag) identifier (id) associated with a first entity, and a second ta value and a second tag id associated with a second entity. the processor is configured to identify a tag id associated with an uplink (ul) transmission, and identify, based on the tag id, a ta value. the transceiver is further configured to transmit the ul transmission using the ta value.
20240235794. UE-INITIATED BEAM OPERATION_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Dalin Zhu of Allen TX (US) for samsung electronics co., ltd., Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd., Emad Nader Farag of Flanders NJ (US) for samsung electronics co., ltd., Gilwon Lee of McKinney TX (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd.
IPC Code(s): H04L5/00, H04W72/20
CPC Code(s): H04L5/0091
Abstract: methods and apparatus for a user equipment (ue)-initiated beam operation. a method performed by a ue includes receiving a configuration related to (i) a time window and (ii) a transmission configuration indication (tci) state operation mode; receiving one or more first tci states; and determining, based on the configuration and the one or more first tci states, one or more second tci states, from the one or more first tci states, to apply for a channel. the method further includes transmitting an indicator indicating the one or more second tci states and the channel; receiving an acknowledgement for the indicator; and identifying a reception time of the acknowledgement.
Inventor(s): Jiman JEONG of Suwon-si (KR) for samsung electronics co., ltd., Yongmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Yunho YOUM of Suwon-si (KR) for samsung electronics co., ltd., Seungho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L9/08, H04L9/30
CPC Code(s): H04L9/088
Abstract: a storage device inventive concepts includes a controller configured to receive data and generate a first encryption key; and a memory storing a second encryption key, wherein the controller may be further configured to encrypt the data with the first encryption key, encrypt the first encryption key with the second encryption key, and store the encrypted data and the encrypted first encryption key in the memory.
Inventor(s): Kyungho RYU of Suwon-si (KR) for samsung electronics co., ltd., Hyunwook LIM of Suwon-si (KR) for samsung electronics co., ltd., Beomcheol KIM of Suwon-si (KR) for samsung electronics co., ltd., Jung-Pil LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L25/03
CPC Code(s): H04L25/03267
Abstract: a receiver includes a first equalizer that receives an input data signal through a communication channel and equalizes the input data signal based on a first control code to generate a first equalization signal, a second equalizer that equalizes the first equalization signal based on a clock signal and a second control code to generate a second equalization signal, a clock data recovery circuit that restores the clock signal based on the second equalization signal, deserializes the second equalization signal, and outputs a deserialized second equalization signal, and a controller that adjusts the first control code and the second control code based on the deserialized second equalization signal.
Inventor(s): Seungsik EOM of Suwon-si (KR) for samsung electronics co., ltd., Youngjin CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Sangyun HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L25/06, G06F8/65, H04L25/03
CPC Code(s): H04L25/061
Abstract: an electronic device includes an analog front end (afe) circuit including plural modules, and a processor that provides a user interface for a firmware update, determines a target module, of which offset calibration is to be performed, among the plural modules, based on a user input to the user interface, determines a position within in the afe circuit to which a common mode voltage is to be applied to perform the offset calibration of the target module, and determines an offset calibration sequence including the target module and the position.
Inventor(s): Seokwon YANG of Daejeon (KR) for samsung electronics co., ltd., Song Min KIM of Daejeon (KR) for samsung electronics co., ltd., Minseok KIM of Daejeon (KR) for samsung electronics co., ltd.
IPC Code(s): H04L27/38, H04L5/00, H04L25/03, H04L27/34
CPC Code(s): H04L27/3863
Abstract: provided is an electronic device including processing circuitry configured to generate at least one signal according to a first communication protocol by referencing a lookup table, the lookup table including simulation waveform information, and the simulation waveform information simulating a second communication protocol different from the first communication protocol, and transmit the at least one signal, the at least one signal including a data packet.
Inventor(s): Hyesung KIM of Suwon-si (KR) for samsung electronics co., ltd., Cheolung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L41/0806, H04L67/51
CPC Code(s): H04L41/0806
Abstract: the disclosure relates to a 5g or 6g communication system for supporting higher data rates. the disclosure provides a method of providing edge computing service information through application triggering in an edge computing system. more specifically, the disclosure provides a method and device for utilizing device triggering or application triggering providing interworking in a wireless communication system between an edge enabler client (eec), an edge enabler server, and an edge configuration server (ecs) constituting an edge computing system.
Inventor(s): Khuong Nhat Nguyen of Frisco TX (US) for samsung electronics co., ltd., Abhishek Sehgal of Plano TX (US) for samsung electronics co., ltd., Hao Chen of Plano TX (US) for samsung electronics co., ltd., Guanbo Chen of Plano TX (US) for samsung electronics co., ltd.
IPC Code(s): H04L43/026, H04L43/0888
CPC Code(s): H04L43/026
Abstract: a method and apparatus for detecting network service types by grouping together applications that have similar latency requirement and data characteristics to form a service type. machine learning algorithms may be used to detect the traffic pattern in the traffic stream by using features extracted from packet information and optionally additional sensor information. subsequently, the output of the machine learning module may go through a post-processing process that may employ different techniques to use current prediction and past predictions to make a final decision about the network service type.
Inventor(s): Deepanshu GAUTAM of Bangalore (IN) for samsung electronics co., ltd., Ashutosh KAUSHIK of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04L43/04, H04L43/062
CPC Code(s): H04L43/04
Abstract: a method and an apparatus for logging events in a communication system is provided. the method comprises receiving, from a network function, a request for creating a managed object instance (moi) of an information object class (ioc) for registering logs associated with a plurality of management services of a communication network. the method further comprises creating a fragment of network resource model (nrm) for logging events associated with the plurality of management services, based on the moi, wherein the nrm comprises a set of mois. additionally, creating the fragment comprises generating the set mois for logging events related to the plurality of management services, wherein the set of mois comprise an moi for registration of a log, an moi for information of the log, and an moi for entry of the log. advantageously, the present disclosure enables logging of events in communication networks.
Inventor(s): Dowan KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinsoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Sooyong EOM of Suwon-si (KR) for samsung electronics co., ltd., Yoserb YI of Suwon-si (KR) for samsung electronics co., ltd., Jubong LEE of Suwon-si (KR) for samsung electronics co., ltd., Seokhyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Junhyung PARK of Suwon-si (KR) for samsung electronics co., ltd., Gajin SONG of Suwon-si (KR) for samsung electronics co., ltd., Sunkey LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L9/40, H04L9/08, H04L9/32, H04L61/5007, H04L67/02
CPC Code(s): H04L63/0428
Abstract: an electronic device includes a communication circuit, and at least one processor connected to the communication circuit. the at least one processor may be configured to broadcast a device identification (id) of the electronic device and an internet protocol (ip) address of the electronic device through the communication circuit. the at least one processor may be configured to receive a token encrypted by an external electronic device and data of the external electronic device through the communication circuit. the at least one processor may be configured to decrypt the encrypted token by using a private key of the electronic device. the at least one processor may be configured to transmit the data of the external electronic device to a server in a cloud by using the decrypted token through the communication circuit.
Inventor(s): Seongjoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Soyeon PARK of Suwon-si (KR) for samsung electronics co., ltd., Junhyo PARK of Suwon-si (KR) for samsung electronics co., ltd., Chaehyun LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L65/1016, H04W4/14
CPC Code(s): H04L65/1016
Abstract: the disclosure relates to a device and a method for providing a rich communication suite (rcs) function in an electronic device are provided. the electronic device includes memory, a communication circuitry, and at least one processor, wherein the memory store instructions which, when executed by the at least one processor individually or collectively, cause the electronic device to identify whether a message of a second type different from a first type is received from an external electronic device when the electronic device supports a message of the first type, and, based on the reception of the message of the second type from the external electronic device, perform a function exchange with the external electronic device when it is determined, based on a function of the external electronic device, that the external electronic device supports the message of the first type.
Inventor(s): TAEHONG KIM of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H04N7/035, H04N7/01
CPC Code(s): H04N7/0357
Abstract: an electronic device for processing and playing a video transmitted from an input device is provided. the electronic device includes video processors and a processor. the video processors are configured to perform processing operations based on a test video including frames received from the input device to generate a sampling video including the frames, where each of the frames include at least one pattern. the processor is configured to receive the sampling video, determine whether the sampling video is output normally or not and an output order of each of the plurality of frames on the sampling video, based on the at least one pattern, and determine whether an error occurs in at least one of the input device and the plurality of video processors, based on the output order of each of the plurality of frames and whether the sampling video is output normally or not.
Inventor(s): Rajan Laxman Joshi of San Diego CA (US) for samsung electronics co., ltd., Madhukar Budagavi of Plano TX (US) for samsung electronics co., ltd.
IPC Code(s): H04N19/463, H04N19/136, H04N19/186
CPC Code(s): H04N19/463
Abstract: an apparatus includes a communication interface configured to receive a bitstream for a compressed video and a processor operably coupled to the communication interface. the processor is configured to identify a video format for the compressed video. the processor is also configured to determine, from one or more of at least one signaling element and the identified video format, a displacement data packing arrangement. the processor is also configured to retrieve displacement data according to the determined displacement data packing arrangement.
Inventor(s): Madhukar Budagavi of Plano TX (US) for samsung electronics co., ltd., Rajan Laxman Joshi of San Diego CA (US) for samsung electronics co., ltd.
IPC Code(s): H04N19/513, H04N19/597, H04N19/70
CPC Code(s): H04N19/513
Abstract: an apparatus comprises a communication interface configured to receive a compressed bitstream including a vertex motion vector information. the vertex motion vector information comprises one or more components. the apparatus comprises a processor operably coupled to the communication interface. the processor is configured to cause parsing the compressed bitstream including the vertex motion vector information, selecting contexts for a plurality of bins of a first component of the vertex motion vector information, wherein a first prefix bin of the first component is coded based on a first context, remaining prefix bins of the first component are coded based on a second context, and one or more suffix bins of the first component are coded using bypass coding, and decoding the first component of the vertex motion vector information based on the selected contexts.
Inventor(s): Madhukar Budagavi of Plano TX (US) for samsung electronics co., ltd., Rajan Laxman Joshi of San Diego CA (US) for samsung electronics co., ltd.
IPC Code(s): H04N19/54, H04N19/52, H04N19/597, H04N19/70
CPC Code(s): H04N19/54
Abstract: an apparatus includes a communication interface configured to receive a compressed video bitstream and a processor operably coupled to the communication interface. the processor is configured to determine, for a vertex in the compressed video bitstream, one or more vertex neighbors based on a signaled limit to a number of the one or more vertex neighbors. the processor is also configured to identify, based on a vertex motion vector (vmv) identifier signaled in the compressed video bitstream, a vmv predictor from among a plurality of vmv predictors to use for the vertex. the processor is also configured to reconstruct a mesh frame based on the determined one or more vertex neighbors and the identified vmv predictor.
Inventor(s): Jihye KWON of Suwon-si (KR) for samsung electronics co., ltd., Youngchan WOO of Suwon-si (KR) for samsung electronics co., ltd., Joayoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Insik MYUNG of Suwon-si (KR) for samsung electronics co., ltd., Miyoung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N21/439, H04N21/442
CPC Code(s): H04N21/439
Abstract: a method of controlling a sound output of a first audio reproducing device that is operable in a simultaneous listening mode with a second audio reproducing device such that, in the simultaneous listening mode, each of the first audio reproducing device and the second audio reproducing device operate to output content sound based on an audio content signal streamed from a corresponding content providing device through a communication connection, according to their respective sound output settings, the method including detecting a conversation request from the second audio reproducing device; controlling the first audio reproducing device to exit the simultaneous listening mode, enter a conversation mode, and change the sound output setting of the first audio reproducing device, in response to detecting the conversation request; and controlling the first audio reproducing device to output the content sound based on the changed sound output setting while operating in the conversation mode.
Inventor(s): Wooseok KANG of Suwon-si (KR) for samsung electronics co., ltd., Doohyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Minho KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N21/44, H04N21/442
CPC Code(s): H04N21/44004
Abstract: disclosed is an electronic apparatus. the electronic apparatus includes: a communication interface comprising communication circuitry, a display, a memory configured to store at least one instruction, and one or more processors connected to the communication interface, the display, and the memory and configured to control the electronic apparatus, wherein the one or more processors, by executing the at least one instruction, may be configured to: control the display to display content streamed from an external server through the communication interface, based on receiving delay characteristic information corresponding to the streamed content from the external server, identify a critical value of a stream buffer in which the streamed content is stored based on the delay characteristic information, and control at least one of a decoding speed of the content or output speed of the display based on the critical value of the stream buffer and a state of the stream buffer.
Inventor(s): Liudmila Igorevna BURMAK of Moscow (RU) for samsung electronics co., ltd., Petr POHL of Moscow (RU) for samsung electronics co., ltd., Xenya Iurevna PETROVA of Moscow (RU) for samsung electronics co., ltd., Imran Kazbekovich NAVRUZBEKOV of Moscow (RU) for samsung electronics co., ltd., Alexey Viktorovich KLIUEV of Moscow (RU) for samsung electronics co., ltd.
IPC Code(s): H04N23/55, G02B5/20, G06T3/40, G06T15/00, G06V10/25, G06V10/56, H04N23/54
CPC Code(s): H04N23/55
Abstract: a device for gathering image sets includes: n digital cameras including one or more ground truth cameras for capturing high quality ground truth images and one or more target cameras for capturing low quality target images, the n digital cameras being optically coupled via n−1 beam splitters, at least n−1 cameras of the n digital cameras being mounted on automatically adjustable mounts; and at least one computer readable storage device storing instructions executable by at least one processor. the instructions cause the at least one processor to adjust the at least n−1 cameras by actuating the automatically adjustable mounts on which the at least n−1 cameras are mounted; synchronize image capture by the digital cameras; and control the digital cameras to gather sets of n images. the at least n−1 cameras are adjusted based on at least one set of n images of the scene.
Inventor(s): Sungwook AN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/63, H04N5/262, H04N23/45, H04N23/667
CPC Code(s): H04N23/632
Abstract: an electronic device including: a housing; a first camera having a first angle of view; a second camera having a second angle of view that is smaller than the first angle of view; a touchscreen display; and a processor. the processor is configured to: based on a photographing direction of the first camera and a photographing direction of the second camera being substantially the same, activate the first camera; display a first image acquired via the first camera on the display; acquire a second image by cropping the first image in accordance with the second angle of view, in response to reception of a first input event; display the second image on the display; activate the second camera in response to reception of a second input event; and display a third image acquired via the second camera on the display.
Inventor(s): ROEE ELIZOV of HERZLIYA (IL) for samsung electronics co., ltd., YOEL YAFFE of MODIIN (IL) for samsung electronics co., ltd.
IPC Code(s): H04N23/667, G06F3/01, G06T7/00, H04N23/65
CPC Code(s): H04N23/667
Abstract: a mobile device includes an application processor and an image sensor. the application processor includes an imaging subsystem configured to process high resolution image data through a first interface and a sensor hub configured to process sensor data through a second interface. the image sensor operates in one of first and second modes. the image sensor is configured to capture the high resolution image data in response to a request from the imaging subsystem and the imaging subsystem is configured to access the high resolution image data using the first interface for performing a first operation, during the first mode. the image sensor is configured to capture low resolution image data and the sensor hub is configured to access the low resolution image data using the second bus for performing a second operation, during the second mode.
Inventor(s): Yeonhak KIM of Suwon-si (KR) for samsung electronics co., ltd., Donghun YU of Suwon-si (KR) for samsung electronics co., ltd., Sewon KIM of Suwon-si (KR) for samsung electronics co., ltd., Kyeonguk LEE of Suwon-si (KR) for samsung electronics co., ltd., Kihuk LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/68, G03B5/04, G03B13/36, H04N23/61, H04N23/67
CPC Code(s): H04N23/687
Abstract: an electronic device according to an embodiment comprises: a lens assembly including one or more lenses aligned along an optical axis; an auto focus (af) module comprising circuitry configured to move the lens assembly in the direction of the optical axis; an optical image stabilization (ois) module comprising circuitry configured to move the lens assembly in a plane perpendicular to the optical axis, wherein the ois module includes a unit correction section based on a driving range of the ois module, a movement range of the lens assembly in the plane according to driving of the af module, and a resolution of the ois module; an image sensor configured to acquire light passing through the lens assembly; a motion sensor; and at least one processor, comprising processing circuitry, electrically connected to the af module, the ois module, the image sensor, and the motion sensor, wherein at least one processor, individually and/or collectively, may be configured to: detect a motion of the electronic device using the motion sensor; drive the image sensor to recognize a subject; control the af module so that the lens assembly moves to a first position on the optical axis based on the position of the subject; and control the ois module to perform ois based on the movement of the electronic device, the first position of the lens assembly, and the unit correction section of the ois module.
Inventor(s): Seongjae JI of Suwon-si (KR) for samsung electronics co., ltd., Sanghyun YEO of Suwon-si (KR) for samsung electronics co., ltd., Jaeseok LEE of Suwon-si (KR) for samsung electronics co., ltd., Jihyung HA of Suwon-si (KR) for samsung electronics co., ltd., Moonkyu KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaegyeong MA of Suwon-si (KR) for samsung electronics co., ltd., Byungduck SEO of Suwon-si (KR) for samsung electronics co., ltd., Sunghoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Jongho LEE of Suwon-si (KR) for samsung electronics co., ltd., Seungcheol JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/81, F24C15/00, H04N23/52
CPC Code(s): H04N23/811
Abstract: a cooking apparatus includes a case, a cooking chamber formed inside the case, a camera configured to obtain an image inside of the cooking chamber, a transparent member, a camera cooling fan configured to blow air toward the camera, a motor configured to rotate the camera cooling fan, and a controller to be electrically connected to the camera and the motor. the controller is configured to operate the camera to obtain a first image inside of the cooking chamber, configured to identify foreign substance-related information of a lens of the camera or the transparent member based on the first image, and configured to control an operation of the motor to perform a cleaning mode, in which the camera cooling fan is rotated at a first rotation speed for a first rotation time, based on the determining that the foreign substance is present.
Inventor(s): Yang Ho Cho of Suwon-si (KR) for samsung electronics co., ltd., Kiwoo Lee of Suwon-si (KR) for samsung electronics co., ltd., Dong Kyung Nam of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/84, G06T5/00, G06T7/90, H01L27/146, H04N25/11
CPC Code(s): H04N23/843
Abstract: an image sensor includes a color filter array including a first color filter including a first number of blue pass filtering elements, the first number of red pass filtering elements, and green pass filtering elements in a first pattern, wherein a number of the green pass filtering elements in the first pattern is twice the first number, and a second color filter including a second number of blue pass filtering elements, the second number of red pass filtering elements, and green pass filtering elements in a second pattern, wherein a number of green pass filtering elements in the second pattern is twice the second number, and the second number is greater than the first number. the second color filter may surround an area of the first color filter.
Inventor(s): Junseok Kim of Suwon-si (KR) for samsung electronics co., ltd., Keunjoo Park of Suwon-si (KR) for samsung electronics co., ltd., Bongki Son of Suwon-si (KR) for samsung electronics co., ltd., Inchun Lim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/47, H04N25/707, H04N25/79
CPC Code(s): H04N25/47
Abstract: provided are a vision sensor and an image processing device including the vision sensor. the vision sensor includes a pixel array including a plurality of pixels each including a photoelectric conversion device, which is configured to generate an optical current, a read-out circuit configured to generate intensity image data based on a magnitude of a voltage converted from the optical current, and a data output logic configured to generate event data based on a variation amount in the voltage converted from the optical current.
Inventor(s): Heesu Lee of Suwon-si (KR) for samsung electronics co., ltd., Daekwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Taeshick Wang of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/704, H01L27/146
CPC Code(s): H04N25/704
Abstract: a camera device includes an image sensor including a pixel array and a logic circuit, with the camera device further comprising an optical module that includes a plurality of lenses arranged in a path of travel of light incident on the image sensor. the pixel array includes a plurality of pixels having a general pixel, a first autofocus pixel and a second autofocus pixel, and at least one of the plurality of lenses has an edge that extends in a first direction. a height of an upper surface of the microlens, included in the first autofocus pixel, is different from a height of an upper surface of the microlens included in the second autofocus pixel.
Inventor(s): Dongjae HAN of Suwon-si (KR) for samsung electronics co., ltd., Haneul JUNG of Suwon-si (KR) for samsung electronics co., ltd., YOUNGHYUN YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/78, H03K4/48
CPC Code(s): H04N25/78
Abstract: disclosed is a ramp signal generator. the ramp signal generator includes: a first unit current source including first sub-unit current sources, and configured to output a first unit current during a first time period; and a second unit current source including second sub-unit current sources, and configured to output a second unit current during a second time period. the first sub-unit current sources are configured to operate according to first sub-ramp control signals, respectively. the second sub-unit current sources are configured to operate according to second sub-ramp control signals, respectively. n first sub-ramp control signals among the first sub-ramp control signals are activated, and m sub-ramp control signals among the second sub-ramp control signals are activated, n and m being different natural numbers.
Inventor(s): Seongkwan YANG of Suwon-si (KR) for samsung electronics co., ltd., Changtaek Kang of Suwon-si (KR) for samsung electronics co., ltd., Jonghan Kim of Suwon-si (KR) for samsung electronics co., ltd., Jaeha Park of Suwon-si (KR) for samsung electronics co., ltd., Hochul Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04R1/02, H01F7/02, H04R1/10, H04R9/04
CPC Code(s): H04R1/028
Abstract: a speaker module includes a yoke plate, a first speaker including a first magnet coupled to the yoke plate, a diaphragm spaced apart from the yoke plate and a first coil coupled to the diaphragm, and a second speaker including a housing coupled to the yoke plate and on a side of the first speaker, a second coil provided in the housing and coupled to the yoke plate, and a second magnet spaced apart from the second coil in the housing and coupled to the housing.
Inventor(s): Adrian Celestinos Arroyo of Porter Ranch CA (US) for samsung electronics co., ltd.
IPC Code(s): H04S7/00, H04R5/02, H04R5/027, H04R5/04, H04S3/00
CPC Code(s): H04S7/301
Abstract: one embodiment provides a method of automatic loudspeaker directivity adaptation. the method comprises measuring one or more room impulse responses (rirs) from one or more loudspeakers to one or more microphones of the one or more loudspeakers, estimating reverberation time and clarity based on the one or more rirs, and estimating one or more positions of the one or more loudspeakers based on the one or more rirs. the method further comprises automatically adapting directivity of the one or more loudspeakers based on the reverberation time estimated, the clarity estimated, and the one or more positions estimated.
Inventor(s): Kyungho JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W4/70, H04W12/06, H04W76/10, H04W88/08
CPC Code(s): H04W4/70
Abstract: a method of operating an iot device comprising receiving a device change request from an iot server. the method includes releasing a connection between an internet-of-things (iot) device and a first device based on receiving the device change request, switching an operation of the iot device to a pairing mode to establish a wireless communication link, based on the releasing of the connection between the iot device and the first device. the method includes establishing a wireless communication link between the iot device and a second device while the iot device is in the pairing mode. the method includes identifying whether the second device is associated with the device change request, and receiving information about an access point (ap) connecting the second device and the iot server from the second device based on the second device being identified as being associated with the device change request.
Inventor(s): Hyesung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jicheol LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W8/06, H04W76/20
CPC Code(s): H04W8/06
Abstract: the disclosure relates to a fifth generation (5g) or sixth generation (6g) communication system for supporting a higher data transmission rate. a method by a first entity for performing a visited session management function (v-smf) in a wireless communication system is provided. the method includes transmitting, by the first entity to a second entity performing a visited-network exposure function (v-nef), an application function (af) notification subscribe request, receiving, by the first entity from the second entity, a response message of the af notification subscribe request, and receiving, by the first entity from the second entity, application data for af traffic influence request information.
Inventor(s): Nivedya Parambath SASI of Bangalore (IN) for samsung electronics co., ltd., Rohini RAJENDRAN of Bangalore (IN) for samsung electronics co., ltd., Rajavelsamy RAJADURAI of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W8/18, H04L41/082
CPC Code(s): H04W8/18
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. embodiments herein is to provide a method for providing user consent for ue in a 5g network () by a ue (). the method includes receiving a request message from a network apparatus () to check with the ue () whether the network apparatus () can provide subscribed event information to a nwdaf (). the request message includes the subscribed event information and a consumer nf id to obtain consent from the ue (). further, the method includes determining, by the ue (), using the preconfigured data whether a consent can be provided for the subscribed event information to the nwdaf (). further, the method includes sending, by the ue (), a response message to the network apparatus (), wherein the response message comprises a consent indication allowing the network apparatus () to provide the subscribed event information to the nwdaf ().
Inventor(s): Sangho LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Sooeun SONG of Gyeonggi-do (KR) for samsung electronics co., ltd., Deokhui LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Jaehong YI of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W8/22
CPC Code(s): H04W8/22
Abstract: a method by which a user equipment (ue) operates in a wireless communication system includes obtaining status information of the ue, identifying an execution mode of each function of a plurality of functions being executed by the ue, identifying at least one function whose execution mode is to be changed among the functions being executed by the ue, based on the status information of the ue, and changing the execution mode of the identified at least one function.
Inventor(s): Donghyun JE of Gyeonggi-do (KR) for samsung electronics co., ltd., Dongmyung KIM of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W12/06, H04W12/041, H04W12/72, H04W12/75
CPC Code(s): H04W12/06
Abstract: the present disclosure relates to a 5g communication system or a 6g communication system for supporting higher data rates beyond a 4g communication system such as long term evolution (lte). a method performed by a first network entity in a wireless communication system includes receiving an authentication acquisition response message including a subscription permanent identifier (supi) of a user equipment (ue) from a second network entity, generating a temporary identifier for the ue based on the supi, and transmitting an authentication response message including the temporary identifier to a third network entity, wherein the temporary identifier includes a variable filed which is generated as a random variable.
20240236706. SIDELINK INITIAL BEAM ACQUISITION_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Emad Nader Farag of Flanders NJ (US) for samsung electronics co., ltd.
IPC Code(s): H04W16/28, H04B7/06, H04W76/10
CPC Code(s): H04W16/28
Abstract: methods and apparatuses for sidelink (sl) initial beam acquisition in a wireless communication system. a method of operating a user equipment (ue) includes transmitting, to a second ue, first channels using multiple spatial domain transmit filters, respectively and receiving, from the second ue, a second channel indicating first assistance information associated with a spatial domain transmit filter. the method further includes determining the spatial domain transmit filter based on the first assistance information and transmitting, based on the spatial domain transmit filter, a third channel that includes a first link establishment message.
Inventor(s): Byounghoon JUNG of Suwon-si (KR) for samsung electronics co., ltd., Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W24/04, H04B7/06, H04W24/08, H04W56/00, H04W68/00, H04W72/044, H04W72/542, H04W74/02, H04W74/0833, H04W76/11, H04W76/28, H04W80/02, H04W88/02
CPC Code(s): H04W24/04
Abstract: the disclosure relates to a pre-5th-generation (5g) or 5g communication system to be provided for supporting higher data rates beyond 4th-generation (4g) communication system, such as long term evolution (lte). a method for operating a terminal in wireless communication system is provided. the method includes receiving, from a base station, system information including at least one parameter associated a paging operation, and monitoring a paging occasion (po) that is determined based on the at least one parameter, during a discontinuous reception (drx) operation.
Inventor(s): Jinyoung OH of Suwon-si (KR) for samsung electronics co., ltd., Hoondong NOH of Suwon-si (KR) for samsung electronics co., ltd., Younsun KIM of Suwon-si (KR) for samsung electronics co., ltd., Taehyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyoungju JI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W24/10, H04B17/354, H04L1/00, H04W8/22
CPC Code(s): H04W24/10
Abstract: disclosed are a method and a device for controlling the measuring and reporting of adjacent channel interference in a wireless communication system. the method comprises the steps of: transmitting, to a base station, a terminal capability report related to the measurement and report of sub-band-specific adjacent channel leakage (acl) interference; receiving, from the base station, setting information that indicates a frequency resource and a time resource for the measuring and reporting of sub-band-specific acl interference; measuring sub-band-specific acl interference on the basis of the setting information; and reporting, to the base station, the measured sub-band-specific acl interference.
Inventor(s): Milos TESANOVIC of Staines, Middlesex (GB) for samsung electronics co., ltd., Jaehyuk JANG of Suwon-si (KR) for samsung electronics co., ltd., Sangkyu BAEK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W28/02
CPC Code(s): H04W28/0278
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. there are disclosed methods for providing a buffer status report (bsr), the methods comprising: creating the bsr; and transmitting the bsr. in a first method, the bsr comprises one octet including an lcg id field of length 3 bits and a buffer size field of length 5 bits, and the buffer size field indicates a total amount of data available for transmission associated with an lcg identified based on a combination of the lcg id field and an lcid or elcid associated with the bsr.
Inventor(s): Hoyeon LEE of Suwon-si (KR) for samsung electronics co., ltd., Sangsoo JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W36/00, H04W36/14
CPC Code(s): H04W36/0011
Abstract: a method performed by a user equipment (ue) in a wireless communication system is provided. the method includes transmitting, to an access and mobility function (amf), a registration request message for moving to a first public land mobile network (plmn) from a second plmn, receiving, from the amf, a registration accept message including first single-network slice selection assistance information (s-nssai) corresponding to the first plmn of the amf, determining whether second s-nssai associated with a protocol data unit (pdu) session established for the ue matches to the first s-nssai, wherein the second s-nssai corresponds to the second plmn, and locally updating the pdu session based on a result of the determining.
Inventor(s): Youngwook SON of Suwon-si (KR) for samsung electronics co., ltd., Hyeonjun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jungwoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyunbae JEON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W36/20, H04W36/06, H04W72/0453
CPC Code(s): H04W36/20
Abstract: a method of operating a wireless communication device includes detecting a first signal based on an auto correlation function value of each of a plurality of sub-bands, determining whether the first signal is an interference signal, the interference signal not being in a primary channel, aborting a first synchronization for the first signal in response to determining the first signal is the interference signal, adjusting a bandwidth to exclude a first sub-band among the plurality of sub-bands, the first sub-band corresponding to the interference signal to obtain an adjusted bandwidth, and performing a second synchronization according to the adjusted bandwidth.
Inventor(s): Milos TESANOVIC of Staines (GB) for samsung electronics co., ltd.
IPC Code(s): H04W40/22, H04W28/02
CPC Code(s): H04W40/22
Abstract: a method of operating a first node in a wireless communication network is provided. the method comprises: receiving an ingress data packet; determining routing; and transmitting the ingress data packet. determining routing may comprise determining a next hop node for the ingress data packet taking account of first level routing information indicating target next hop nodes. alternatively, determining routing may comprise determining, for a target next hop node, a channel on which to transmit the ingress data packet taking account of second level routing information.
Inventor(s): Dongeun SUH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W48/16, H04W8/22, H04W24/08, H04W28/02
CPC Code(s): H04W48/16
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. the method performed by a network exposure function (nef) entity in a wireless communication system, the method comprising receiving, from an application function (af) entity, a first message for requesting generation of a quality of service (qos) flow including information on a set of user equipments (ues), transmitting, to a plurality of policy control function (pcf) entity, a second message including information for a qos monitoring report of each ue included in the set of the ues, receiving, from a user plane function (upf) entity, qos monitoring events based on the information for the qos monitoring report, and transmitting, to the af entity, of a notification message including qos monitoring reports for the set of the ues based on the qos monitoring events.
Inventor(s): Sangchul YUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W48/16, H04B1/04, H04W76/14
CPC Code(s): H04W48/16
Abstract: an electronic device includes a sensor module, a wireless communication module including a low noise amplifier (lna) and a bluetooth radio frequency (rf) circuit, memory storing instructions, and at least one processor operatively connected to the sensor module, the wireless communication module, and the memory. the instructions, when executed by the at least one processor, cause the electronic device to obtain sensor data related to movement of the electronic device from the sensor module, determine an adaptive scan mode related to the lna and/or the bluetooth rf circuit based on the sensor data, and control the lna and/or the bluetooth rf circuit according to the adaptive scan mode.
Inventor(s): Dongeun SUH of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W48/18, H04W48/16, H04W76/38
CPC Code(s): H04W48/18
Abstract: a method performed by an access and mobility management function (amf) entity in a wireless communication system is provided. a protocol data unit (pdu) session is established with respect to a terminal via a first network slice. it is determined whether replacement of the first network slice is necessary. in case that replacement is necessary, information on a second network slice is provided to the terminal. a session management (sm) context update message including the information on the second network slice is provided to a session management function (smf) entity corresponding to the pdu session. an sm context update response message including information on whether a new pdu session is allocable to the second network slice is received from the smf entity. based on the sm context update response message, replacement is attempted with the second network slice, replacement is performed with another network slice, or replacement is stopped.
Inventor(s): Koustav ROY of Bangalore (IN) for samsung electronics co., ltd., Pratibha K SATYAGANAPATI of Bangalore (IN) for samsung electronics co., ltd., Arijit SEN of Bangalore (IN) for samsung electronics co., ltd., Gaorav Kumar GUPTA of Bangalore (IN) for samsung electronics co., ltd., Akshita JOHRI of Bangalore (IN) for samsung electronics co., ltd., Aman AGARWAL of Bangalore (IN) for samsung electronics co., ltd., Lalith KUMAR of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W48/18, H04W60/00
CPC Code(s): H04W48/18
Abstract: a method and a system for selecting non-terrestrial networks (ntns) in communication networks are provided. the method includes prioritizing a random terrestrial network (tn) over other ntns, changing the scan pattern to accommodate combination of bands, radio access technologies (rats), and public land mobile networks (plmns), and pre-configuring plmn priorities at the user equipment (ue).
Inventor(s): Koustav ROY of Bangalore (IN) for samsung electronics co., ltd., Akshita JOHRI of Bangalore (IN) for samsung electronics co., ltd., Arijit SEN of Bangalore (IN) for samsung electronics co., ltd., Gaorav Kumar GUPTA of Bangalore (IN) for samsung electronics co., ltd., Pratibha K SATYAGANAPATI of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W48/18, H04W48/16, H04W76/10
CPC Code(s): H04W48/18
Abstract: a method and a system for optimizing acquisition time and power consumption at a user equipment (ue) are provided. the method includes establishing, by the ue located at an initial location, a radio resource control (rrc) connection with a non-terrestrial network (ntn)-based public land mobile network (plmn), determining a current location of the ue based on one or more predetermined parameters, determining whether to perform a plmn search for identifying a plmn with a higher priority than connected ntn-based plmn based at least on the initial location and the current location of the ue; and performing one of performing the plmn search upon determining that a distance between the initial location and the current location of the ue is greater than a predetermined threshold distance value, or skipping the plmn search upon determining that the distance between the initial location and the current location of the ue is less than the predetermined threshold distance value.
Inventor(s): Khuong N. Nguyen of Frisco TX (US) for samsung electronics co., ltd., Abhishek Sehgal of Frisco TX (US) for samsung electronics co., ltd., Hao Chen of Allen TX (US) for samsung electronics co., ltd., Guanbo Chen of McKinney TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W52/02
CPC Code(s): H04W52/0248
Abstract: embodiments of the present disclosure provide methods and apparatuses for predicting a quality of experience (qoe) of a user and adjusting target wake time (twt) operations for the user based on the predicted quality of experience in a wireless local area network communications system. the apparatuses include a communication device comprising a transceiver and a processor operably connected to the transceiver. the transceiver is configured to receive traffic over a wireless network for an application in a twt operation. the processor is configured to determine network statistics from the traffic, estimate a qoe value for the application based on the network statistics, and determine new twt parameters for the twt operation based on the estimated qoe value.
Inventor(s): Deokhui LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Dongmyung KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Wonjun KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Sangho LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Juho LEE of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W52/02, H04W76/20
CPC Code(s): H04W52/0251
Abstract: the disclosure relates to a 5g communication system or a 6g communication system for supporting higher data rates beyond a 4g communication system such as long term evolution (lte). disclosed is a method performed by a terminal, which includes generating application process state (aps) information indicating whether data generated by at least one application of the terminal is data generated in a background process or data generated in a foreground process; and transmitting a control signal including the aps information to a base station.
Inventor(s): Ameha Tsegaye ABEBE of Gyeonggi-do (KR) for samsung electronics co., ltd., Hyoungju JI of Gyeonggi-do (KR) for samsung electronics co., ltd., Younsun KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngrok JANG of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W52/40, H04W52/14, H04W52/26
CPC Code(s): H04W52/40
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. the disclosure includes a methods and apparatus to enable massive and low-latency access via distributed massive mimo where downlink reference signal or downlink synchronization signal is utilized for an open-loop power control designed to be suitable for compressive sensing-based grant free-random access.
Inventor(s): Hongbo Si of Plano TX (US) for samsung electronics co., ltd., Li Guo of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W56/00, H04L5/00, H04L27/26, H04W72/02, H04W72/044, H04W72/20, H04W76/14, H04W92/18
CPC Code(s): H04W56/0015
Abstract: a method of a first ue comprises: determining a sidelink synchronization identity (sl-sid) and a set of resources; generating at least one sidelink synchronization signal and physical broadcast channel (s-ssb) based on the sl-sid and the set of resources, wherein each s-ssb of the at least one s-ssb includes first two symbols for a sidelink primary synchronization signal (s-pss) and second two symbols for a sidelink secondary synchronization signal (s-sss); generating a first sequence corresponding to the s-pss, wherein the first sequence is determined based on a binary phase shift keying (bpsk) modulated m-sequence with a 127 of sequence length and a low cross-correlation with a pss; generating a second sequence corresponding to the s-sss, wherein the second sequence is determined based on a bpsk modulated gold-sequence with a 127 of sequence length; and transmitting, the at least one s-ssb over sidelink channels established with the second ue.
Inventor(s): Suha YOON of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok RYU of Suwon-si (KR) for samsung electronics co., ltd., Youngbum KIM of Suwon-si (KR) for samsung electronics co., ltd., Seho MYUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W56/00, H04L27/26, H04W76/28
CPC Code(s): H04W56/0015
Abstract: the present disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. in addition, the present disclosure relates to a method carried out by a base station of a wireless communication system, and a device for carrying out same, the method comprising the steps of: determining whether a frequency band operated by a base station uses a bandwidth that is narrower than a preset bandwidth; if a bandwidth that is narrower than the preset bandwidth is used, determining a subcarrier spacing (scs) that is narrower than a preset scs; generating a synchronization signal block (ssb) using the determined scs; and transmitting the ssb, wherein the determined scs is smaller than 15 khz.
Inventor(s): Sangjun MOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W56/00
CPC Code(s): H04W56/0015
Abstract: the disclosure relates to a fifth generation (5g) or sixth generation (6g) communication system for supporting a higher data transmission rate. a method for providing time synchronization in a wireless communication system is provided. the method includes receiving, by a user equipment (ue) from a base station, a reference identification (id) based on a time synchronization status information received from a network entity by the base station, and receiving, by the ue from the base station, the time synchronization status information via radio resource control (rrc) signaling.
Inventor(s): Dongyeon KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Jicheol LEE of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W60/00, H04W48/16
CPC Code(s): H04W60/00
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by an access and mobility management function (amf) entity in a wireless communication system is provided. the method comprises receiving, from a user equipment (ue), a registration request for fifth generation system (5gs), wherein the registration request includes information on a ue policy container and an indicator that the ue is moving from an evolved packet system (eps), transmitting, to a first policy control function (pcf) entity for the ue, a first request message for first access and management (am) policy association based on the registration request, wherein the first request message includes the indicator and receiving, from the first pcf entity, a message including an identifier (id) of a second pcf entity for the eps based on the first request message.
Inventor(s): Mythri HUNUKUMBURE of Staines (GB) for samsung electronics co., ltd., David Gutierrez ESTEVEZ of Staines (GB) for samsung electronics co., ltd.
IPC Code(s): H04W64/00, H04W28/02
CPC Code(s): H04W64/00
Abstract: a method of performing localisation of a user equipment, ue, in a telecommunication network is provided. the method comprises receiving from a second network entity a location request, and identifying multiple quality of service, qos, class for location services comprising a plurality of qos requirements based on the location request.
Inventor(s): Sapan Pramodkumar SHAH of Bangalore (IN) for samsung electronics co., ltd., Basavaraj Jayawant PATTAN of Bangalore (IN) for samsung electronics co., ltd., Narendranath Durga TANGUDU of Bangalore (IN) for samsung electronics co., ltd., Nishant GUPTA of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W64/00
CPC Code(s): H04W64/00
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. embodiments herein provide a method for location management in off-network. the method includes sending, by a first ue (a), a request including a configuration to a second ue (b), where the configuration allows the second ue (b) to report location information of the second ue (b) to the first ue (a) in off-network. the method includes storing, by the second ue (b), the configuration and sending a response to first ue (a), where the first ue (a) acknowledges to the second ue (b) upon on receiving the response from the second ue (b). the method includes detecting, by the second ue (b), a trigger of a location reporting event based on the configuration, and reports the location information of the second ue (b) to the first ue (a) in the off-network, where the first ue (a) acknowledges to the second ue (b) upon receiving the location information.
Inventor(s): Mythri HUNUKUMBURE of Staines, Middlesex (GB) for samsung electronics co., ltd., David GUTIERREZ ESTEVEZ of Staines, Middlesex (GB) for samsung electronics co., ltd.
IPC Code(s): H04W64/00, G01S13/76
CPC Code(s): H04W64/00
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method of localising user equipment, ues, in a 5g new radio, nr, network, comprising a location management function, lmf, and a next generation nodeb, gnb, defining a cell, using an ultra wideband, uwb, anchor located in the cell, the method comprising: managing, by the network, interworking with the uwb anchor; and localising, via the uwb anchor, a first subset of ues selected from a set of ues within the cell.
Inventor(s): Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W68/02
CPC Code(s): H04W68/02
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by a user equipment (ue) in a wireless communication system is provided. the method may include: receiving, from a base station, paging early indication (pei) configuration information including a parameter indicating a number of ue identity (id) based paging subgroups; determining a paging subgroup id corresponding to the ue, based on a maximum value of the parameter; monitoring pei information on a pei occasion, based on the pei configuration information; and in case that the pei information indicates the paging subgroup id, monitoring paging downlink control information (dci) on a paging occasion (po).
Inventor(s): Jinwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyoungjoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Minho YANG of Suwon-si (KR) for samsung electronics co., ltd., Taeyoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Euichang JUNG of Suwon-si (KR) for samsung electronics co., ltd., Chaeman LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/0453, H04L5/00, H04W24/10, H04W76/30
CPC Code(s): H04W72/0453
Abstract: an electronic device may include at least one antenna, a wireless communication circuit configured to support a first communication protocol and a second communication protocol, and at least one processor. the at least one processor may control the wireless communication circuit to communicate with a base station through at least one first cell using the first communication protocol in at least one frequency band, and may control the wireless communication circuit to receive, from the base station, configuration information on a second cell using the second communication protocol different from the first communication protocol. the at least one processor may determine, based on the configuration information on the second cell, whether a frequency band of the second cell is included in the at least one frequency band, may determine whether a blocking condition is satisfied, and may control the wireless communication circuit to transmit a measurement result of the second cell to the base station or control the measurement result of the second cell not to be reported to the base station.
Inventor(s): Sa ZHANG of Beijing (CN) for samsung electronics co., ltd., Feifei SUN of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W72/1268, H04L1/1812, H04W72/0446, H04W72/21
CPC Code(s): H04W72/1268
Abstract: a method performed by a user equipment (ue) in a wireless communication system is provided. the method includes receiving first information for configuring simultaneous transmission of physical uplink shared channels (puschs), second information for configuring a control resource set (coreset) with a coreset pool index, and third information for configuring acknack feedback mode associated with uplink control information (uci), identifying a pusch to be used for multiplexing the uci among the puschs, multiplexing the uci in the identified pusch, and transmitting the puschs including the identified pusch in which the uci is multiplexed, wherein in case that the simultaneous transmission is enabled, the acknack feedback mode is configured to a first mode, and the uci includes hybrid automatic repeat request-acknowledgement (harq-ack) information, the identified pusch is one of candidate puschs selected among the puschs and is associated with coresets.
Inventor(s): Junhyuk SONG of Suwon-si (KR) for samsung electronics co., ltd., Seungwon KANG of Suwon-si (KR) for samsung electronics co., ltd., Youngsung KHO of Suwon-si (KR) for samsung electronics co., ltd., Chulmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Chungkeun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/23, H04W88/08
CPC Code(s): H04W72/23
Abstract: a method performed by an e2 node is provided. the method includes transmitting, to a near-(rt ran intelligent controller (ric), an e2 setup request message, and receiving, from the near-rt ric, an e2 setup response message for the e2 setup request message. the e2 setup request message includes e2 node component configuration information. a request part of the e2 node component configuration information includes a gnb cu configuration update message or a gnb-du configuration update message, in case that the e2 node is a gnb-du. a response part of the e2 node component configuration information includes a gnb-cu configuration update acknowledge message corresponding to the gnb-cu configuration update message or a gnb-du configuration update acknowledge message corresponding to the gnb-du configuration update message, in case that the e2 node is the gnb-du.
Inventor(s): Hongsik YOON of Suwon-si (KR) for samsung electronics co., ltd., Jungmin PARK of Suwon-si (KR) for samsung electronics co., ltd., Jonghyun BANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/232, H04W72/56, H04W76/20
CPC Code(s): H04W72/232
Abstract: an operating method of a terminal to communicate with a base station, includes: detecting at least one overlapped third control channel element (cce) in a plurality of first cces included in first search spaces corresponding to a first physical downlink control channel (pdcch) received from a first transmission and reception point (trp) of the base station, and in a plurality of second cces included in second search spaces corresponding to a second pdcch received from the first trp and a second trp of the base station; determining, based on the at least one overlapped third cce, object cces from the plurality of first cces and the plurality of second cces; and performing channel estimation of the object cces by using a first memory.
Inventor(s): Youngchan WOO of Suwon-si (KR) for samsung electronics co., ltd., Jihye KWON of Suwon-si (KR) for samsung electronics co., ltd., Joayoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Miyoung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/25, G06F3/0482, G06F9/54
CPC Code(s): H04W72/25
Abstract: a mobile device and a method of controlling the same. a control method according to an embodiment comprises displaying a user interface (ui) screen which includes a plurality of ui elements, detecting a first user input associated with a first ui element among the plurality of ui elements, identifying one or more identification codes associated with the first ui element based on the detecting of the first user input, detecting one or more neighboring devices based on the one or more identification codes, displaying a window which includes one or more ui elements associated with the one or more neighboring devices, detecting a second user input associated with a second ui element among the one or more ui elements, determining a neighboring device associated with the second ui element, among the one or more neighboring devices, as a controlled device controllable through the second ui element, based on detecting of the second user input, and transmitting a control command related to the first ui element to the neighboring device determined as the controlled device.
Inventor(s): Gihyun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/52, H04W72/0453
CPC Code(s): H04W72/52
Abstract: a method performed by a distributed unit (du), the method includes: identifying frequency bands for providing a communication service in a sector, identifying a plurality of radio units (rus) for providing the frequency bands; identifying, based on a priority of each frequency band, a first ru of which prediction load information is less than an off-threshold, among the plurality of rus; and transmitting, to the first ru, a first control signal for disabling the first ru.
Inventor(s): Jeongho YEO of Gyeonggi-do (KR) for samsung electronics co., ltd., Jinyoung OH of Gyeonggi-do (KR) for samsung electronics co., ltd., Heedon GHA of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/50, H04W56/00, H04W72/21, H04W72/23
CPC Code(s): H04W72/535
Abstract: methods and apparatuses are provided in which information associated with a transmission time interval (tti) length is identified. a timing advance command is received from a base station via a random access response or a medium access control (mac) control element (ce). information on a timing advance is identified based on the timing advance command and the information associated with the tti length. data is transmitted to the base station based on the information on the timing advance. a maximum value for the information on the timing advance is based on the information associated with the tti length.
Inventor(s): Junsu CHOI of Suwon-si (KR) for samsung electronics co., ltd., Sunghwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunkee MIN of Suwon-si (KR) for samsung electronics co., ltd., Sunkee LEE of Suwon-si (KR) for samsung electronics co., ltd., Junhak LIM of Suwon-si (KR) for samsung electronics co., ltd., Kiyeong JEONG of Suwon-si (KR) for samsung electronics co., ltd., Hyeonu CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W74/0816, H04W52/02, H04W74/08, H04W76/10
CPC Code(s): H04W74/0816
Abstract: in an electronic device and an operating method of the electronic device, according to various embodiments, the electronic device comprises: a communication circuit for transmitting or receiving data through a plurality of links generated between an external electronic device and the electronic device; and a processor operatively connected to the communication circuit, wherein the processor may be configured to: receive, from the external electronic device, a signal including a target beacon transmission time (tbtt) of a beacon to be received through at least one link from among the plurality of links, and interval information of the beacon; set a target wake time (twt) parameter on the basis of the tbtt or the interval; and control the communication circuit on the basis of the twt parameter.
Inventor(s): Carmela Cozzo of San Diego CA (US) for samsung electronics co., ltd., Aristides Papasakellariou of Houston TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W74/0833, H04L1/00, H04W16/28, H04W72/1268
CPC Code(s): H04W74/0833
Abstract: methods and apparatuses for beam determination in random access in a wireless communication system a method performed by a user equipment (ue) includes receiving a system information block (sib) indicating a first number of spatial settings, a set of random access channel occasions (ros), and a set of numbers of repetitions for transmission of a physical random access channel (prach). the method further includes determining a number of repetitions, from the set of numbers of repetitions, for the prach transmission, a subset of ros, from the set of ros, corresponding to the number of repetitions, and a set of spatial settings having a one-to-one association with the subset of ros based on a mapping between the first number of spatial settings and a number of ros in the subset of ros. the method further includes transmitting the prach over the subset of ros using the set of spatial settings.
Inventor(s): Hyunkoo YANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/10
CPC Code(s): H04W76/10
Abstract: a method performed by a user equipment (ue) in a wireless communication system is provided. the method includes performing packet data unit (pdu) session establishment procedure with at least one network entity, receiving, from a media server, pdu set marking information for generating a pdu set reception report, receiving, from the media server, media packets processed based on pdu set, generating the pdu set reception report based on the media packets and the pdu set marking information, and transmitting, to the media server, the pdu set reception report including information on at least one pdu set.
Inventor(s): Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd., Jaehyuk JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/15, H04B17/318, H04W72/1273, H04W76/20
CPC Code(s): H04W76/15
Abstract: the disclosure provides a method performed by a ue in a wireless communication system supporting a dual connectivity. the method includes identifying that a secondary cell group (scg) is deactivated, receiving first information on a transmission configuration information (tci) state for a primary secondary cell (pscell), and receiving second information for activating the scg, wherein the tci state is activated for a physical downlink control channel (pdcch) or a physical downlink shared channel (pdsch) on the pscell of the scg activated based on the second information.
Inventor(s): Pavan Kumar DEVARAYANIGARI of Bengaluru (IN) for samsung electronics co., ltd., Rohit KUMAR of Bengaluru (IN) for samsung electronics co., ltd., Shalini GOVIL of Bengaluru (IN) for samsung electronics co., ltd., Pushpa RAMU of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): H04W76/19, H04L5/00
CPC Code(s): H04W76/19
Abstract: embodiments herein disclose methods and devices for managing data traffic on a receiver. a method disclosed herein includes detecting, by a receiver, at least one out of order radio link control (rlc) protocol data unit (pdu) in a plurality of rlc pdus received from a transmitter, performing, by the receiver, a recovery action based on a packet data convergence protocol (pdcp) reordering time to recover the at least one out of order rlc pdu; and causing, by the receiver, an rlc layer to send a plurality of rlc service data units (sdus) to a higher layer after the performing the recovery action, the plurality of rlc sdus corresponding to the plurality of rlc pdus.
Inventor(s): Euichang JUNG of Suwon-si (KR) for samsung electronics co., ltd., Youngrok JANG of Suwon-si (KR) for samsung electronics co., ltd., Suha YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/19, H04W24/08, H04W72/1268, H04W72/1273, H04W72/232, H04W76/20
CPC Code(s): H04W76/19
Abstract: the present disclosure relates to a communication system. the present disclosure may be applied to intelligent services on the basis of 5g communication technology and iot-related technology. according to the present disclosure, a method performed by a terminal may comprise the steps of: receiving an rrc message, including information on one or more bfd sets, from a base station; identifying whether beam failure is detected for one or more reference signals included in the one or more bfd sets; when beam failure is detected for at least one of the one or more bfd sets, identifying at least one candidate beam reference signal on the basis of a candidate beam set associated with the bfd sets for which beam failure is detected; and transmitting a bfr request message including information about the at least one candidate beam reference signal.
Inventor(s): Mangesh Abhimanyu INGALE of Bangalore (IN) for samsung electronics co., ltd., Neha SHARMA of Bangalore (IN) for samsung electronics co., ltd., Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/20, H04W12/0433, H04W36/00, H04W76/16, H04W80/02
CPC Code(s): H04W76/20
Abstract: example embodiments provide a method and system for performing a bearer type change of a plurality of radio bearers configured for a user equipment (ue) including changing the bearer type of a specific bearer by the network and checking any changes in keys, packet data convergence protocol (pdcp) termination point, or pdcp version change. furthermore, the ue is notified to change the bearer type either through a reconfiguration procedure without handover, a secondary node (sn) change procedure or reconfiguration procedure with handover, or a sn change procedure. the network indicates one or more operations to the ue for performing the bearer type change.
Inventor(s): Jaehong YI of Suwon-si (KR) for samsung electronics co., ltd., Suhwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Sooeun SONG of Suwon-si (KR) for samsung electronics co., ltd., Changsung LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyeondeok JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/28, H04L5/00, H04W76/18
CPC Code(s): H04W76/28
Abstract: the disclosure relates to a 5th generation (5g) communication system or a 6th generation (6g) communication system for supporting higher data rates beyond a 4th generation (4g) communication system, such as long term evolution (lte). a method of a base station (bs) for sleep mode control is provided. the method includes transmitting scheduled downlink (dl) data to a user equipment (ue), detecting one or more consecutive discontinuous transmissions (dtx) at feedback timing corresponding to the dl data, transmitting downlink control information (dci) including a wake-up confirming message (wcm) to the ue in response to the detection of the consecutive dtx, and determining that the ue is in wake-up mode based on reception of an acknowledgment (ack) corresponding to the wcm from the ue.
Inventor(s): Jeongho Jeon of San Jose CA (US) for samsung electronics co., ltd., Aristides Papasakellariou of Houston TX (US) for samsung electronics co., ltd., Hongbo Si of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W76/28, H04L5/00
CPC Code(s): H04W76/28
Abstract: methods and apparatuses for cell discontinuous transmission (dtx) and discontinuous reception (drx). a method performed by a user equipment (ue) includes receiving information related to set(s) of parameters associated with cell dtx or cell drx on a cell and an indication for activation or deactivation of the cell dtx or the cell drx. the set(s) of parameters include a cycle, a start offset, or an on-duration timer. the cell dtx and the cell drx share common parameters. the method further comprises determining an active period and a non-active period of the cell dtx or the cell drx based on the indication for activation or deactivation, determining a start of the cell dtx or drx on-duration timer based on a system frame number (sfn), and receiving or transmitting channels or signals on the cell based on the determined active and non-active periods of the cell dtx or the cell drx, respectively.
Inventor(s): Min WU of Beijing (CN) for samsung electronics co., ltd., Sa ZHANG of Beijing (CN) for samsung electronics co., ltd., Feifei SUN of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W76/28
CPC Code(s): H04W76/28
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. embodiments of the present disclosure provide a communication method and a user equipment. the method includes: receiving semi-static configuration information related to a cell dtx and/or a cell drx, and/or, receiving dynamic adjustment signaling related to a cell dtx and/or a cell drx; determining a state of the cell dtx and/or the cell drx based on the semi-static configuration information and/or the dynamic adjustment signaling, wherein the state comprises an active time and an inactive time, i.e., in the embodiment of the embodiment of the present disclosure, using the cell dtx and/or cell drx for the cell base station side is able to effectively reduce the power consumption of the communication base station by discontinuous transmission and/reception, and thus power saving can be achieved on the base station side.
Inventor(s): Kyeongin Jeong of Allen TX (US) for samsung electronics co., ltd., Hongbo Si of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W76/28, H04W4/40, H04W24/10
CPC Code(s): H04W76/28
Abstract: methods and apparatuses in a wireless communication system. a method of operating a user equipment bs includes generating a first indicator requesting a report of a set of sidelink (sl) discontinuous reception (drx) configurations for sl communications among user equipments (ues); transmitting a downlink signal including the first indicator; receiving an uplink signal including the report of the set of the sl drx configurations based on the first indicator indicating that the report of the set of the sl drx configurations is requested; and configuring, based on the report of the set of the sl drx configurations, a network drx configuration for a uu interface between a ue and a network entity including the bs.
Inventor(s): Kiran Gurudev KAPALE of Bangalore (IN) for samsung electronics co., ltd., Arunprasath RAMAMOORTHY of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W76/45, H04W76/30
CPC Code(s): H04W76/45
Abstract: the disclosure relates to a fifth generation (5g) or sixth generation (6g) communication system for supporting a higher data transmission rate. a method and a mission critical (mc) network for handling an ad hoc group call participation in the mc network are provided. the method includes transmitting an ad hoc group call add user notification message to a primary mc server when a criteria to add a mc client to an established ad hoc group call is met. the ad hoc group call add user notification message includes a mc service ad hoc group identifier associated with the ad hoc group call, and a mc service identifier list meeting the criteria specified in the ad hoc group call.
Inventor(s): Jieun KIM of Suwon-si (KR) for samsung electronics co., ltd., Eunha CHOI of Suwon-si (KR) for samsung electronics co., ltd., Joayoung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05B47/11, G06T7/90, H05B45/10, H05B45/20
CPC Code(s): H05B47/11
Abstract: a lighting apparatus including a lighting module configured to emit light; and at least one processor configured to determine a color and a brightness of a current scene of content displayed on a display apparatus, and to control the lighting module to emit, in a space in which the display apparatus is located, light with a color and brightness corresponding to the determined color and brightness of the current scene of the content.
Inventor(s): Seunghui SUNWOO of Suwon-si (KR) for samsung electronics co., ltd., Suyoun KIM of Suwon-si (KR) for samsung electronics co., ltd., Youngmin BAE of Suwon-si (KR) for samsung electronics co., ltd., Daekyu LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K5/00, H04M1/02, H05K5/03
CPC Code(s): H05K5/0018
Abstract: an electronic device is provided. the electronic device includes a foldable display, a decoration member made of a resin material to surround at least a portion of the foldable display, a support member configured to support the foldable display and including a metal area connected to the decoration member, and a conductive member disposed on the decoration member and electrically connected to the metal area. the conductive member may include a first conductive member arranged to face the support member and a second conductive member arranged parallel to the first conductive member and electrically connected to the first conductive member.
Inventor(s): Yuncheol KANG of Suwon-si (KR) for samsung electronics co., ltd., Dongsool HONG of Suwon-si (KR) for samsung electronics co., ltd., Jongchul CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K5/02
CPC Code(s): H05K5/0226
Abstract: provided is an electronic device. the electronic device may comprise: a housing comprising a first housing and a second housing configured to rotate relative to the first housing; a display comprising a first display area disposed on the first housing, a second display area disposed on the second housing, and a folding area disposed between the first display area and the second display area; and a display support member comprising a composite material and supporting the display. the display support member may comprise a pattern structure facing the folding area. the pattern structure may comprise a wing part and a support part extending from the wing part.
Inventor(s): Yongwoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Eunsoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Doyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jonghoon WOO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K5/03, H05K5/02
CPC Code(s): H05K5/03
Abstract: a foldable sheet of an embodiment may include a body area including a first body and a second body spaced apart from the first body, a folding area positioned between the first body and the second body and folded in a first direction so that the first body and the second body face each other, a bending area including a first bending area for connecting one end of the folding area and the first body, and a second bending area for connecting the other end of the folding area and the second body. the bending area may have a structure which is bent at least twice to protrude in a second direction opposite to the first direction so that the first body and the second body are arranged in parallel to each other in a state where the folding area is unfolded.
Inventor(s): Heecheul MOON of Suwon-si (KR) for samsung electronics co., ltd., Yongseok LEE of Suwon-si (KR) for samsung electronics co., ltd., Gyeongtae KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangmin KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K5/06, H05K5/03
CPC Code(s): H05K5/06
Abstract: an electronic device includes a housing which forms an outer appearance of the electronic device and includes a frame including a step and a cover member which faces the step of the frame, a support member between the step and the cover member and is bonded to the frame and the cover member, and adhesive members which bond the support member to the housing. the adhesive members include a first adhesive member which includes a cushion layer and bonds the support member to the frame, at the step, and a second adhesive member which bonds the support member and the cover member to each other.
Inventor(s): Jeewoong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B10/00, H01L23/48, H01L29/06, H01L29/417, H01L29/423, H01L29/786
CPC Code(s): H10B10/125
Abstract: a semiconductor memory device includes a substrate including first and second surfaces opposite to each other, a first active pattern on the first surface, a first channel pattern on the first active pattern and a first source/drain pattern connected to the first channel pattern, a gate electrode provided on the first channel pattern and extending in a first direction, the gate electrode adjacent to the first source/drain pattern in a second direction intersecting the first direction, a shared contact provided under the first source/drain pattern and the gate electrode and electrically connecting the first source/drain pattern and the gate electrode to each other, and a backside metal layer on the second surface.
20240237325. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jung Gun YOU of Suwon-si (KR) for samsung electronics co., ltd., Sug Hyun SUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B10/00, H01L29/06, H01L29/08, H01L29/423, H01L29/775
CPC Code(s): H10B10/125
Abstract: a semiconductor device includes a substrate including first and second regions; a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern, a height of the second lower pattern being identical to a height of the first lower pattern, and second sheet patterns; a first gate structure including a first gate insulating film and a first gate electrode; a second gate structure including a second gate insulating film, and a second gate electrode, a width of the second gate electrode being greater than a width of the first gate electrode; a first source/drain pattern on the first lower pattern and connected to the first sheet patterns; and a second source/drain pattern on the second lower pattern and connected to the second sheet patterns, wherein a number of first sheet patterns is smaller than a number of second sheet patterns.
Inventor(s): Hoin LEE of Suwon-si (KR) for samsung electronics co., ltd., Byung-Hyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Hoouk LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00, H01L29/423
CPC Code(s): H10B12/315
Abstract: a semiconductor device includes a substrate including a cell array region and a core region disposed around the cell array region; a plurality of storage element contacts; a contact plug; and a contact plug spacer. the plurality of storage element contacts may include a first storage element contact and at least one second storage element contact, the first storage element contact is a closest storage element contact of the plurality of storage element contacts to the core region, such that the first storage element contact is between the core region and the at least one second storage element contact. a step difference in a vertical direction perpendicular to the substrate between a top surface of the first storage element contact and a top surface of the at least one second storage element contact is 5 nm or less.
Inventor(s): Jungmin PARK of Suwon-si (KR) for samsung electronics co., ltd., Hanjin LIM of Suwon-si (KR) for samsung electronics co., ltd., Hyungsuk JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/315
Abstract: a semiconductor device includes a structure including a conductive region, and a capacitor electrically connected to the conductive region of the structure. the capacitor includes a first electrode electrically connected to the conductive region, a second electrode on the first electrode, and a dielectric layer between the first electrode and the second electrode. at least one of the first electrode and the second electrode includes a first material layer including a first material region including a first crystalline region and a second crystalline region different from the first crystalline region, and a second material region between the first crystalline region and the second crystalline region, and a second material layer on the first material layer. at least a portion of the first material layer is between the second material layer and the dielectric layer. a material of the first material region is different from a material of the second material region.
20240237333. SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jul Pin PARK of Suwon-si (KR) for samsung electronics co., ltd., Jae Joon SONG of Suwon-si (KR) for samsung electronics co., ltd., Heon Jun HA of Suwon-si (KR) for samsung electronics co., ltd., Dong-Sik PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00, H01L23/528
CPC Code(s): H10B12/482
Abstract: disclosed is a semiconductor memory device including a peripheral gate structure on a substrate, bitlines disposed on the peripheral gate structure and extending in a first direction, a protruding insulating pattern including channel trenches, extending in a second direction intersecting the first direction, channel structures disposed on the bitlines in the channel trenches and including a metal oxide, first wordlines disposed on the channel structures and extending in the second direction, second wordlines disposed on the channel structures, extending in the second direction, and spaced apart from the first wordlines in the first direction, landing pads disposed on the channel structures and connected to the channel structures, pad separation patterns disposed on the protruding insulating pattern and separating the landing pads, first passage patterns connected to the protruding insulating pattern through pad separation patterns and formed of an oxide-based insulating material, and data storage patterns disposed on the landing pads.
20240237334. SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kang In Kim of Suwon-si (KR) for samsung electronics co., ltd., Kyoung Hwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Young Woo Son of Suwon-Si (KR) for samsung electronics co., ltd., Sang-Bin Ahn of Suwon-si (KR) for samsung electronics co., ltd., Sang Min Lee of Suwon-si (KR) for samsung electronics co., ltd., Young-Seung Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/50
Abstract: a semiconductor memory device with improved performance and reliability is provided. the semiconductor memory device includes a substrate having a cell region and a peripheral region, a cell region isolation layer that separates the cell region from the peripheral region, and a plurality of cell gate structures, each including a cell gate electrode that extends in a first direction. the cell region includes a plurality of active areas that extend in a second direction different from the first direction, and are between a respective cell element isolation layer and the cell region isolation layer. each of the active areas includes a first portion and a second portion separated by the cell gate structure, the second portion of the active area is on both sides of a respective one of the first portion of the active area. the active areas includes a normal active area and a dummy active area.
Inventor(s): JIWON KIM of Suwon-si (KR) for samsung electronics co., ltd., Ahreum Lee of Suwon-si (KR) for samsung electronics co., ltd., JOONYOUNG KWON of Suwon-si (KR) for samsung electronics co., ltd., Dohyung Kim of Suwon-si (KR) for samsung electronics co., ltd., JUNHYOUNG KIM of Suwon-si (KR) for samsung electronics co., ltd., SUKKANG SUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H01L23/528, H01L25/065, H10B41/10, H10B41/27, H10B41/35, H10B41/40, H10B43/10, H10B43/35, H10B43/40, H10B80/00
CPC Code(s): H10B43/27
Abstract: a semiconductor device includes a cell region in which a channel structure is disposed and memory cells arranged in three dimensions are disposed, a cell contact region in which a cell contact plug is disposed, a common source line contact region in which a common source line contact plug is disposed, an input and output contact region in which an input and output contact plug is disposed, a word line cut region separating word lines of the cell region from word lines of a neighboring cell region, a common source line layer connecting the channel structure and the common source line contact plug, and an input and output pad connected to the input and output contact plug. the common source line layer and the input and output pad are disposed at the same vertical level.
Inventor(s): Jung-Hwan Lee of Suwon-si (KR) for samsung electronics co., ltd., Hyunmin Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H10B41/27, H10B41/41, H10B43/40
CPC Code(s): H10B43/27
Abstract: a non-volatile memory device may include a channel structure including a first stacking structure, a second stacking structure, a first channel structure penetrating the first stacking structure, and a second channel structure penetrating the second stacking structure. the second channel structure includes a first portion having a width that decreases or is maintained as the first portion extends toward the substrate, and a second portion having a width that increases as the second portion extends toward the substrate.
Inventor(s): Yongmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Seongsoo MOON of Suwon-si (KR) for samsung electronics co., ltd., SEUNGHAK PARK of Suwon-si (KR) for samsung electronics co., ltd., Junseok PARK of Suwon-si (KR) for samsung electronics co., ltd., KI-BONG SEO of Suwon-si (KR) for samsung electronics co., ltd., Howon SEO of Suwon-si (KR) for samsung electronics co., ltd., Mingyoo CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H10B43/10, H10B43/35, H10B43/40
CPC Code(s): H10B43/27
Abstract: a method of fabricating a semiconductor device including: alternately stacking first interlayer insulating layers and first sacrificial layers on a substrate to form a first mold structure; forming a dummy hole penetrating the first mold structure; forming a dummy sacrificial pillar in the dummy hole, wherein the formation of the dummy sacrificial pillar includes forming a first recessed key region to expose a portion of an inner side surface of the dummy hole; and forming a second mold structure with a substantially uniform thickness on the first recessed key region and the first mold structure, wherein a top surface of the second mold structure has a second recessed key region corresponding to the first recessed key region.
Inventor(s): Hwayeong LEE of Suwon-si (KR) for samsung electronics co., ltd., Hunmo Yang of Suwon-si (KR) for samsung electronics co., ltd., Seulji Song of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, G11C5/06, G11C16/04, H10B41/10, H10B41/27, H10B43/10
CPC Code(s): H10B43/27
Abstract: a semiconductor memory device includes a semiconductor substrate; a plurality of word line layers on the semiconductor substrate, each word line layer of the plurality of word line layers including an insulating line and a word line; a plurality of insulating layers in spaces between the plurality of word line layers, the plurality of insulating layers being apart from each other in a vertical direction on the semiconductor substrate; a channel structure extending in the vertical direction on the semiconductor substrate, the channel structure including a channel region and a gate dielectric layer surrounding the channel region; and a bit line on the channel structure, the bit line extending in a first horizontal direction perpendicular to the vertical direction and being connected to the channel structure, wherein the word line of each word line layer of the plurality of word line layers has a meandering shape.
Inventor(s): Hyunsu Hwang of Suwon-si (KR) for samsung electronics co., ltd., Un-Byoung Kang of Suwon-si (KR) for samsung electronics co., ltd., Jumyong Park of Suwon-si (KR) for samsung electronics co., ltd., Dongjoon Oh of Suwon-si (KR) for samsung electronics co., ltd., Hyunchul Jung of Suwon-si (KR) for samsung electronics co., ltd., Sanghoo Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, G11C16/04, H01L23/528, H01L25/065, H10B43/10, H10B43/35, H10B43/40, H10B80/00
CPC Code(s): H10B43/27
Abstract: a three-dimensional semiconductor memory device may include a bottom structure and a top structure thereon. the bottom structure may include a semiconductor substrate including a cell array region and a connection region extending therefrom, and a first stack including first gate electrodes and first interlayer insulating layers alternately stacked on the semiconductor substrate. the top structure may include a second stack including second gate electrodes and second interlayer insulating layers alternately stacked on the first stack. respective lengths of the first gate electrodes in a second direction may decrease as a distance in a first direction increases, and respective lengths of the second gate electrodes in the second direction may increase as a distance in the first direction increases. the first direction may be perpendicular to a bottom surface of the semiconductor substrate, and the second direction may be parallel to the bottom surface of the semiconductor substrate.
Inventor(s): Taisoo Lim of Seoul (KR) for samsung electronics co., ltd., Suhyeong Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H01L29/423, H01L29/788, H01L29/792, H10B41/10, H10B41/27, H10B41/35, H10B43/35
CPC Code(s): H10B43/27
Abstract: semiconductor devices are provided. a semiconductor device includes gate electrodes on a substrate and stacked perpendicularly to an upper surface of the substrate. the semiconductor device includes interlayer insulating layers alternately stacked with the gate electrodes. moreover, the semiconductor device includes channel structures passing through the gate electrodes. each of the channel structures includes a channel layer extending perpendicularly to the upper surface of the substrate, a tunneling insulating layer on the channel layer, charge storage layers on the tunneling insulating layer in respective regions between the gate electrodes and a side surface of the tunneling insulating layer, and first blocking insulating layers on the charge storage layers, respectively. a first layer of the first blocking insulating layers is on an upper surface, a lower surface, and a side surface of a first layer of the charge storage layers.
Inventor(s): Younghwan Son of Hwaseong-si (KR) for samsung electronics co., ltd., Jeehoon Han of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H01L29/417, H01L29/423, H10B41/20, H10B43/20, H10B43/30, H10B51/20, H10K19/00
CPC Code(s): H10B43/27
Abstract: three-dimensional (3d) semiconductor memory devices are provided. a 3d semiconductor memory device includes an electrode structure on a substrate. the electrode structure includes gate electrodes stacked on the substrate. the gate electrodes include electrode pad regions. the 3d semiconductor memory device includes a dummy vertical structure penetrating one of the electrode pad regions. the dummy vertical structure includes a dummy vertical semiconductor pattern and a contact pattern extending from a portion of the dummy vertical semiconductor pattern toward the substrate.
Inventor(s): JIWON KIM of Suwon-si (KR) for samsung electronics co., ltd., Dohyung Kim of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Sukkang Sung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B80/00, H01L23/00, H01L25/00, H01L25/065, H01L25/18
CPC Code(s): H10B80/00
Abstract: a three-dimensional semiconductor memory device may include a peripheral structure and a cell structure on the peripheral structure. the cell structure may include a substrate having first and second surfaces, which are opposite to each other, a stack including gate electrodes, which are stacked on the first surface of the substrate, an insulating layer on the second surface of the substrate, a penetration contact plug penetrating the first surface of the substrate, a first gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and spaced apart from the penetration contact plug, a second gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and connected to the penetration contact plug, a first gapfill spacer between the first gapfill conductive pattern and the substrate, and a second gapfill spacer between the second gapfill conductive pattern and the substrate.
Inventor(s): Jeoungin Yi of Seoul (KR) for samsung electronics co., ltd., Seungyeon KWAK of Suwon-si (KR) for samsung electronics co., ltd., Juhyun KIM of Seoul (KR) for samsung electronics co., ltd., Sangho PARK of Anyang-si (KR) for samsung electronics co., ltd., Sunyoung LEE of Seoul (KR) for samsung electronics co., ltd., Jiyoun LEE of Anyang-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Seoul (KR) for samsung electronics co., ltd., Hyun KOO of Seongnam-si (KR) for samsung electronics co., ltd., Sunghun LEE of Hwaseong-si (KR) for samsung electronics co., ltd., Hyeonho CHOI of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K50/11, H10K50/15, H10K50/16, H10K50/17, H10K50/18
CPC Code(s): H10K85/342
Abstract: provided is an organometallic compound represented by formula 1, an organic light-emitting device including the same, and an electronic apparatus including the organic light-emitting device.
Inventor(s): Jeoungin Yi of Seoul (KR) for samsung electronics co., ltd., Seungyeon KWAK of Suwon-si (KR) for samsung electronics co., ltd., Juhyun KIM of Seoul (KR) for samsung electronics co., ltd., Sangho PARK of Anyang-si (KR) for samsung electronics co., ltd., Sunyoung LEE of Seoul (KR) for samsung electronics co., ltd., Jiyoun LEE of Anyang-si (KR) for samsung electronics co., ltd., Yoonhyun KWAK of Seoul (KR) for samsung electronics co., ltd., Hyun KOO of Seongnam-si (KR) for samsung electronics co., ltd., Sunghun LEE of Hwaseong-si (KR) for samsung electronics co., ltd., Hyeonho CHOI of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K50/11, H10K50/15, H10K50/16, H10K50/17, H10K50/18
CPC Code(s): H10K85/342
Abstract:
m(l)(l) <formula 1>
Inventor(s): Sangdong KIM of Suwon-si (KR) for samsung electronics co., ltd., Ohkyu KWON of Suwon-si (KR) for samsung electronics co., ltd., Rae Sung KIM of Suwon-si (KR) for samsung electronics co., ltd., Sang Ho PARK of Suwon-si (KR) for samsung electronics co., ltd., Insun PARK of Suwon-si (KR) for samsung electronics co., ltd., Duck-hyung LEE of Seoul (KR) for samsung electronics co., ltd., Dong-Seok LEEM of Suwon-si (KR) for samsung electronics co., ltd., Chan-ju JEONG of Seoul (KR) for samsung electronics co., ltd., Eun-gyeong CHOI of Daegu (KR) for samsung electronics co., ltd., Mi-hyeon CHOO of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/60, C07C25/22, C07D339/06, H10K30/30, H10K30/40, H10K39/32
CPC Code(s): H10K85/6576
Abstract: provided are a compound represented by chemical formula 1, a photoelectric device, an image sensor, and an electronic device including the same.
Inventor(s): Sangdong KIM of Suwon-si (KR) for samsung electronics co., ltd., Ohkyu KWON of Suwon-si (KR) for samsung electronics co., ltd., Rae Sung KIM of Suwon-si (KR) for samsung electronics co., ltd., Sang Ho PARK of Suwon-si (KR) for samsung electronics co., ltd., Insun PARK of Suwon-si (KR) for samsung electronics co., ltd., Duck-hyung LEE of Seoul (KR) for samsung electronics co., ltd., Dong-Seok LEEM of Suwon-si (KR) for samsung electronics co., ltd., Chan-ju JEONG of Seoul (KR) for samsung electronics co., ltd., Eun-gyeong CHOI of Daegu (KR) for samsung electronics co., ltd., Mi-hyeon CHOO of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/60, C07C25/22, C07D339/06, H10K30/30, H10K30/40, H10K39/32
CPC Code(s): H10K85/6576
Abstract:
Inventor(s): Sangdong KIM of Suwon-si (KR) for samsung electronics co., ltd., Ohkyu KWON of Suwon-si (KR) for samsung electronics co., ltd., Rae Sung KIM of Suwon-si (KR) for samsung electronics co., ltd., Sang Ho PARK of Suwon-si (KR) for samsung electronics co., ltd., Insun PARK of Suwon-si (KR) for samsung electronics co., ltd., Duck-hyung LEE of Seoul (KR) for samsung electronics co., ltd., Dong-Seok LEEM of Suwon-si (KR) for samsung electronics co., ltd., Chan-ju JEONG of Seoul (KR) for samsung electronics co., ltd., Eun-gyeong CHOI of Daegu (KR) for samsung electronics co., ltd., Mi-hyeon CHOO of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/60, C07C25/22, C07D339/06, H10K30/30, H10K30/40, H10K39/32
CPC Code(s): H10K85/6576
Abstract: in chemical formula 1, the definition of each substituent is as described in the specification.
Inventor(s): Dmytro APALKOV of San Jose CA (US) for samsung electronics co., ltd., Roman CHEPULSKYY of Milpitas CA (US) for samsung electronics co., ltd., Jaewoo JEONG of San Jose CA (US) for samsung electronics co., ltd., FNU IKHTIAR of San Jose CA (US) for samsung electronics co., ltd., Sungchul LEE of Osan-Si (KR) for samsung electronics co., ltd.
IPC Code(s): H10N50/10, G11C11/16, H01F10/32, H10B61/00, H10N50/85
CPC Code(s): H10N50/10
Abstract: a perpendicular shape anisotropy magnetic tunnel junction structure includes a reference layer, a non-magnetic layer, and a free layer. the reference layer includes a first side and a second side that is opposite the first side. the non-magnetic spacer includes a first side and a second side. the first side of the non-magnetic spacer is on the second side of the first reference layer. the free layer includes a first side and a second side. the first side of the free layer is on the second side of the non-magnetic spacer. the free layer further includes a first layer on the first side of the free layer, a second layer on the second side of the free layer and a coupling layer disposed between the first layer and the second layer. a saturation magnetization of the second layer is between 2-5 times inclusive a saturation magnetization of the first layer.
Inventor(s): Dmytro APALKOV of San Jose CA (US) for samsung electronics co., ltd., Roman CHEPULSKYY of Milpitas CA (US) for samsung electronics co., ltd., Jaewoo JEONG of San Jose CA (US) for samsung electronics co., ltd., FNU IKHTIAR of San Jose CA (US) for samsung electronics co., ltd., Sungchul LEE of Osan-Si (KR) for samsung electronics co., ltd.
IPC Code(s): H10N50/10, G11C11/16, H01F10/32, H10B61/00, H10N50/85
CPC Code(s): H10N50/10
Abstract: a perpendicular shape anisotropy magnetic tunnel junction structure includes a reference layer, a non-magnetic layer, and a free layer. the reference layer includes a first side and a second side that is opposite the first side of the reference layer. the non-magnetic spacer includes a first side and a second side in which the first side of the non-magnetic spacer is on the second side of the first reference layer. the free layer includes a first side and a second side in which the first side of the free layer is on the second side of the non-magnetic spacer and in which the free layer further includes an exchange energy ahaving a range of 0.5 to 1.0 �erg/cm.
Inventor(s): Jaehyeong LEE of Suwon-si (KR) for samsung electronics co., ltd., Gilho LEE of Pohang-si (KR) for samsung electronics co., ltd., Jinhyoun KANG of Suwon-si (KR) for samsung electronics co., ltd., Jaeho SHIN of Suwon-si (KR) for samsung electronics co., ltd., Seunghan LEE of Pohang-si (KR) for samsung electronics co., ltd., Daeseok HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10N69/00
CPC Code(s): H10N69/00
Abstract: a superconducting quantum interferometric device (squid) includes: a conductive material region formed on a partial region of a substrate; a first superconducting material layer including a first loop including first and second extension units that are spaced apart from each other to form a proximity josephson junction and that form a stack structure with the conductive material region; a second superconducting material layer including a second loop including first and second end units spaced apart from each other; and a tunnel josephson junction formed by a stack structure including a tunnel thin film layer forming and the first and second end units, wherein at least a portion of the second loop forms a stack structure with the first loop.
Inventor(s): Sukhwan CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Zhe WU of Suwon-si (KR) for samsung electronics co., ltd., Jung Moo LEE of Suwon-si (KR) for samsung electronics co., ltd., Hideki HORII of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10N70/00, C22C30/00, H10B63/00, H10B63/10, H10N70/20
CPC Code(s): H10N70/8828
Abstract: a variable resistance memory device includes a first electrode; a variable resistance material on the first electrode; and a second electrode on the variable resistance material, wherein the variable resistance material includes an impurity (a) and is represented as agesbte, an atomic concentration ‘x’ of the germanium is 0.4≤x≤0.5, an atomic concentration ‘z’ of the tellurium is 0.3≤z<0.6, an atomic concentration ‘p’ of the impurity is 0<p≤0.1, and an atomic concentration ‘y’ of the antimony is 1-x-z-p and is greater than 0.
Samsung Electronics Co., Ltd. patent applications on July 11th, 2024
- Samsung Electronics Co., Ltd.
- A47L9/22
- A47L5/22
- F04D17/06
- CPC A47L9/22
- Samsung electronics co., ltd.
- A47L11/40
- A47L11/282
- CPC A47L11/4011
- A61B5/021
- A61B5/00
- A61B5/024
- CPC A61B5/021
- A61B5/1455
- CPC A61B5/1455
- A63F13/77
- G06F9/50
- CPC A63F13/77
- B01D53/82
- B01D53/04
- B01J20/02
- B01J20/04
- B01J20/16
- B01J20/20
- B01J20/28
- B01J20/32
- B01J39/04
- B01J39/18
- B01J41/04
- B01J41/12
- B01J47/024
- B01J47/026
- CPC B01D53/82
- B05B12/00
- B05B1/08
- CPC B05B12/006
- B24B37/013
- CPC B24B37/013
- B65G1/127
- CPC B65G1/127
- C12N1/20
- C07K14/195
- CPC C12N1/205
- D06F34/18
- D06F33/32
- H04N23/61
- CPC D06F34/18
- D06F35/00
- D06F37/30
- D06F105/48
- CPC D06F35/006
- D06F39/00
- C02F1/42
- D06F23/02
- D06F34/22
- D06F39/02
- D06F39/12
- CPC D06F39/007
- D06F34/28
- CPC D06F39/02
- CPC D06F39/022
- D06F39/14
- A47L15/42
- CPC D06F39/14
- D06F58/10
- D06F58/04
- D06F58/22
- CPC D06F58/10
- F24C15/00
- F21V29/67
- G03B17/55
- H05K7/20
- CPC F24C15/006
- F24F13/062
- F24F13/12
- CPC F24F13/062
- G01B9/02
- G01B9/02097
- CPC G01B9/02044
- G01C21/20
- CPC G01C21/20
- G01J5/02
- G01J5/0806
- G01K7/01
- CPC G01J5/023
- G01N21/3581
- G01N21/95
- H01L21/66
- CPC G01N21/3581
- G01Q60/60
- G01N27/407
- G01N27/413
- CPC G01Q60/60
- G01Q80/00
- G01Q60/24
- CPC G01Q80/00
- G01R31/374
- G01R31/367
- G01R31/388
- CPC G01R31/374
- G01S13/87
- G01S13/76
- CPC G01S13/876
- G02B3/00
- H04N23/55
- CPC G02B3/0043
- G02B7/10
- G02B13/00
- CPC G02B7/102
- G02B27/01
- G06V10/764
- G06V20/40
- H04N23/667
- CPC G02B27/0172
- G03F1/48
- G03F1/60
- H01L21/02
- H01L21/033
- CPC G03F1/48
- G03F7/004
- C07F7/22
- H01L21/027
- CPC G03F7/0042
- G03F7/20
- G03F7/32
- CPC G03F7/0044
- G03F7/038
- C08F12/30
- CPC G03F7/0382
- G05D1/02
- CPC G05D1/0238
- G05D1/646
- G05D1/243
- CPC G05D1/646
- G06F1/16
- CPC G06F1/1647
- G06F3/02
- G06F3/0346
- G06F3/0354
- G06F3/038
- G09G3/00
- CPC G06F1/1652
- H02K3/50
- H02K5/15
- CPC G06F1/1658
- G06F1/26
- CPC G06F1/26
- G06F3/041
- CPC G06F3/041661
- G06F3/0481
- G06F3/14
- H04M1/02
- CPC G06F3/0481
- G06F3/04817
- G06F3/04845
- G06F3/0486
- G06F9/451
- CPC G06F3/04817
- G06F3/06
- CPC G06F3/0604
- CPC G06F3/0608
- CPC G06F3/0613
- CPC G06F3/0655
- CPC G06F3/0659
- G06F3/023
- G06F3/0488
- CPC G06F3/1423
- G06F3/04842
- G06F3/04847
- CPC G06F3/1438
- G06F7/544
- G06F7/556
- CPC G06F7/5443
- CPC G06F9/451
- G06F16/17
- CPC G06F9/5055
- G01K7/22
- G01K13/00
- CPC G06F9/5094
- G06F9/54
- CPC G06F9/542
- G06F11/07
- G06F12/02
- CPC G06F11/0772
- G06F11/10
- G06N20/00
- CPC G06F11/1004
- CPC G06F11/1016
- CPC G06F11/1068
- G11C7/06
- G11C7/10
- G11C7/12
- G11C29/42
- G06F11/36
- CPC G06F11/3644
- CPC G06F11/3684
- G06F13/16
- CPC G06F12/023
- G06F17/15
- CPC G06F17/15
- G06F30/392
- G06F30/327
- CPC G06F30/392
- G06F30/398
- G06K19/07
- G06K19/077
- H02M3/335
- CPC G06K19/0718
- G06N3/045
- G06N3/048
- CPC G06N3/045
- G06N3/0455
- CPC G06N3/0455
- G06N3/047
- G06N7/01
- CPC G06N3/047
- G06N3/063
- CPC G06N3/063
- G06N3/08
- G06F18/214
- G06F18/23213
- G06F18/2413
- G06F18/40
- G06V10/82
- G06V40/16
- CPC G06N3/08
- G06N3/084
- CPC G06N3/084
- G06N3/091
- CPC G06N3/091
- G06T5/00
- G06T5/50
- G06T7/00
- G06T7/90
- CPC G06T5/001
- G06T5/60
- CPC G06T5/60
- G06T3/00
- G06T19/00
- G06V10/56
- CPC G06T5/006
- G06T7/11
- CPC G06T7/11
- G06T9/00
- CPC G06T9/001
- G06T11/00
- G06F40/205
- G06F40/35
- G06N3/094
- G10L15/18
- CPC G06T11/00
- G06F3/01
- G06F3/16
- CPC G06T19/00
- G06V10/70
- G06V10/60
- CPC G06V10/70
- G06V10/774
- G06T7/80
- G06V20/70
- H04N23/90
- CPC G06V10/774
- G06T3/40
- CPC G06V10/82
- G09G5/10
- CPC G09G3/006
- G09G3/20
- CPC G09G3/2096
- G09G3/34
- G09G3/36
- CPC G09G3/3406
- G10L15/22
- G10L15/30
- CPC G10L15/1815
- CPC G10L15/22
- G11B27/031
- CPC G11B27/031
- G11C5/14
- CPC G11C5/14
- G11C7/08
- G11C7/14
- CPC G11C7/12
- G11C11/406
- CPC G11C11/406
- G11C11/4093
- G11C11/4096
- CPC G11C11/40615
- G11C11/408
- CPC G11C11/40618
- G11C11/4094
- CPC G11C11/40622
- G11C11/4074
- G11C11/4076
- G11C11/4099
- CPC G11C11/4074
- G06F1/12
- H03K3/037
- H03K19/20
- CPC G11C11/4076
- G11C11/4091
- CPC G11C11/4091
- G11C5/06
- CPC G11C11/4096
- G11C16/04
- G11C16/26
- H01L23/528
- H10B41/27
- H10B41/40
- H10B41/50
- H10B43/10
- H10B43/20
- H10B43/27
- H10B43/40
- H10B43/50
- CPC G11C16/0483
- G11C16/22
- G11C16/10
- CPC G11C16/22
- G11C16/34
- G11C16/08
- G11C16/24
- CPC G11C16/3495
- G11C29/12
- CPC G11C29/12005
- G11C29/32
- G11C29/20
- CPC G11C29/32
- G11C29/56
- CPC G11C29/56004
- H01F10/32
- G11C11/16
- H10B61/00
- H10N50/10
- H10N50/85
- CPC H01F10/3286
- H01G4/10
- H01L29/51
- H01L29/94
- H10B12/00
- CPC H01G4/10
- H01J37/32
- CPC H01J37/32174
- CPC H01J37/32183
- C23C16/26
- C23C16/48
- CPC H01J37/3244
- CPC H01J37/32642
- CPC H01L21/02502
- H01L21/304
- CPC H01L21/304
- H01L21/321
- H01L21/67
- H01L21/677
- CPC H01L21/3212
- H01L21/48
- H01L23/31
- H01L23/498
- H01L25/18
- H10B80/00
- CPC H01L21/4857
- C23C16/44
- C23C16/452
- CPC H01L21/67115
- CPC H01L21/67132
- H01L21/683
- H01L21/687
- CPC H01L21/6838
- H01L21/8234
- H01L29/40
- CPC H01L21/82345
- H01L23/00
- CPC H01L22/12
- H01L25/16
- CPC H01L22/22
- G01R31/52
- G01R31/64
- CPC H01L22/32
- H01L23/48
- H01L21/762
- H01L21/768
- H01L27/088
- CPC H01L23/481
- H01L25/065
- H01L29/06
- H01L29/08
- H01L29/423
- H01L29/66
- H01L29/775
- H01L29/786
- CPC H01L23/49811
- H01L23/15
- H01L25/10
- CPC H01L23/49816
- CPC H01L23/49822
- H05K1/11
- CPC H01L23/49838
- H01L23/433
- H01L25/00
- H01L23/50
- H01L23/538
- CPC H01L23/50
- H01L21/311
- CPC H01L23/528
- CPC H01L23/5283
- H01L29/417
- H01L29/78
- CPC H01L23/5286
- CPC H01L23/5383
- H01L23/544
- CPC H01L23/544
- CPC H01L23/562
- H01L21/8238
- H01L27/092
- CPC H01L24/06
- CPC H01L24/14
- B23K3/02
- CPC H01L24/75
- CPC H01L25/0652
- H01L23/13
- CPC H01L25/0657
- H01L25/075
- CPC H01L25/0753
- CPC H01L25/105
- CPC H01L27/092
- H01L27/146
- CPC H01L27/14612
- CPC H01L27/14614
- CPC H01L27/14623
- CPC H01L27/14627
- CPC H01L27/1463
- CPC H01L27/14643
- CPC H01L28/75
- H01G4/30
- CPC H01L28/91
- H01L23/522
- CPC H01L28/92
- H01L27/06
- CPC H01L29/0607
- CPC H01L29/0653
- H01L29/24
- CPC H01L29/0673
- H01L21/285
- H01L29/45
- CPC H01L29/41733
- CPC H01L29/66545
- H01L29/49
- CPC H01L29/66553
- H01L29/732
- CPC H01L29/732
- H01L29/76
- CPC H01L29/7606
- CPC H01L29/775
- CPC H01L29/78696
- H01L33/00
- H01L33/08
- H01L33/32
- H01L33/38
- H01L33/62
- CPC H01L33/0008
- H01L33/12
- H01L33/06
- CPC H01L33/12
- H01L33/20
- H01L33/60
- CPC H01L33/60
- H01M10/0567
- H01M4/38
- H01M4/40
- H01M10/052
- H01M10/0562
- H01M10/0568
- CPC H01M10/0567
- H01Q1/24
- H01Q1/38
- H01Q1/44
- CPC H01Q1/243
- H01Q21/00
- H01Q21/06
- H01Q9/04
- CPC H01Q21/065
- H02H9/04
- H03K19/0185
- CPC H02H9/04
- CPC H02H9/046
- H02J7/00
- CPC H02J7/00304
- H02H7/18
- CPC H02J7/00308
- H02M1/084
- H02J7/06
- H02M1/00
- H02M3/158
- H02M7/5395
- CPC H02M1/0845
- H02M1/42
- H02M1/38
- CPC H02M1/4225
- H03B5/12
- CPC H03B5/1212
- G06F1/08
- CPC H03K3/037
- H03K3/356
- CPC H03K19/018571
- H03M1/06
- H03M1/12
- CPC H03M1/0607
- H03M7/40
- H03M7/30
- CPC H03M7/405
- H04B1/04
- H04W76/10
- H04W76/30
- CPC H04B1/04
- H03F3/24
- H04B1/44
- CPC H04B1/0458
- H04B1/48
- H04B1/00
- CPC H04B1/48
- H04B3/32
- CPC H04B3/32
- H04B7/0426
- H04B7/06
- H04L1/1812
- H04L5/00
- CPC H04B7/0439
- H04B7/0456
- H04L25/02
- CPC H04B7/0456
- H04L1/1607
- H04W72/21
- CPC H04B7/0626
- H04B7/08
- H04W24/10
- H04W76/19
- H04W80/02
- CPC H04B7/088
- H04B7/145
- CPC H04B7/145
- H04B17/13
- H04B17/10
- H04W4/38
- CPC H04B17/13
- CPC H04L5/0051
- H04W72/0446
- CPC H04L5/0053
- H04W72/20
- CPC H04L5/0091
- H04L9/08
- H04L9/30
- CPC H04L9/088
- H04L25/03
- CPC H04L25/03267
- H04L25/06
- G06F8/65
- CPC H04L25/061
- H04L27/38
- H04L27/34
- CPC H04L27/3863
- H04L41/0806
- H04L67/51
- CPC H04L41/0806
- H04L43/026
- H04L43/0888
- CPC H04L43/026
- H04L43/04
- H04L43/062
- CPC H04L43/04
- H04L9/40
- H04L9/32
- H04L61/5007
- H04L67/02
- CPC H04L63/0428
- H04L65/1016
- H04W4/14
- CPC H04L65/1016
- H04N7/035
- H04N7/01
- CPC H04N7/0357
- H04N19/463
- H04N19/136
- H04N19/186
- CPC H04N19/463
- H04N19/513
- H04N19/597
- H04N19/70
- CPC H04N19/513
- H04N19/54
- H04N19/52
- CPC H04N19/54
- H04N21/439
- H04N21/442
- CPC H04N21/439
- H04N21/44
- CPC H04N21/44004
- G02B5/20
- G06T15/00
- G06V10/25
- H04N23/54
- CPC H04N23/55
- H04N23/63
- H04N5/262
- H04N23/45
- CPC H04N23/632
- H04N23/65
- CPC H04N23/667
- H04N23/68
- G03B5/04
- G03B13/36
- H04N23/67
- CPC H04N23/687
- H04N23/81
- H04N23/52
- CPC H04N23/811
- H04N23/84
- H04N25/11
- CPC H04N23/843
- H04N25/47
- H04N25/707
- H04N25/79
- CPC H04N25/47
- H04N25/704
- CPC H04N25/704
- H04N25/78
- H03K4/48
- CPC H04N25/78
- H04R1/02
- H01F7/02
- H04R1/10
- H04R9/04
- CPC H04R1/028
- H04S7/00
- H04R5/02
- H04R5/027
- H04R5/04
- H04S3/00
- CPC H04S7/301
- H04W4/70
- H04W12/06
- H04W88/08
- CPC H04W4/70
- H04W8/06
- H04W76/20
- CPC H04W8/06
- H04W8/18
- H04L41/082
- CPC H04W8/18
- H04W8/22
- CPC H04W8/22
- H04W12/041
- H04W12/72
- H04W12/75
- CPC H04W12/06
- H04W16/28
- CPC H04W16/28
- H04W24/04
- H04W24/08
- H04W56/00
- H04W68/00
- H04W72/044
- H04W72/542
- H04W74/02
- H04W74/0833
- H04W76/11
- H04W76/28
- H04W88/02
- CPC H04W24/04
- H04B17/354
- H04L1/00
- CPC H04W24/10
- H04W28/02
- CPC H04W28/0278
- H04W36/00
- H04W36/14
- CPC H04W36/0011
- H04W36/20
- H04W36/06
- H04W72/0453
- CPC H04W36/20
- H04W40/22
- CPC H04W40/22
- H04W48/16
- CPC H04W48/16
- H04W76/14
- H04W48/18
- H04W76/38
- CPC H04W48/18
- H04W60/00
- H04W52/02
- CPC H04W52/0248
- CPC H04W52/0251
- H04W52/40
- H04W52/14
- H04W52/26
- CPC H04W52/40
- H04L27/26
- H04W72/02
- H04W92/18
- CPC H04W56/0015
- CPC H04W60/00
- H04W64/00
- CPC H04W64/00
- H04W68/02
- CPC H04W68/02
- CPC H04W72/0453
- H04W72/1268
- CPC H04W72/1268
- H04W72/23
- CPC H04W72/23
- H04W72/232
- H04W72/56
- CPC H04W72/232
- H04W72/25
- G06F3/0482
- CPC H04W72/25
- H04W72/52
- CPC H04W72/52
- H04W72/50
- CPC H04W72/535
- H04W74/0816
- H04W74/08
- CPC H04W74/0816
- CPC H04W74/0833
- CPC H04W76/10
- H04W76/15
- H04B17/318
- H04W72/1273
- CPC H04W76/15
- CPC H04W76/19
- H04W12/0433
- H04W76/16
- CPC H04W76/20
- H04W76/18
- CPC H04W76/28
- H04W4/40
- H04W76/45
- CPC H04W76/45
- H05B47/11
- H05B45/10
- H05B45/20
- CPC H05B47/11
- H05K5/00
- H05K5/03
- CPC H05K5/0018
- H05K5/02
- CPC H05K5/0226
- CPC H05K5/03
- H05K5/06
- CPC H05K5/06
- H10B10/00
- CPC H10B10/125
- CPC H10B12/315
- CPC H10B12/482
- CPC H10B12/50
- H10B41/10
- H10B41/35
- H10B43/35
- CPC H10B43/27
- H10B41/41
- H01L29/788
- H01L29/792
- H10B41/20
- H10B43/30
- H10B51/20
- H10K19/00
- CPC H10B80/00
- H10K85/30
- C07F15/00
- C09K11/06
- H10K50/11
- H10K50/15
- H10K50/16
- H10K50/17
- H10K50/18
- CPC H10K85/342
- H10K85/60
- C07C25/22
- C07D339/06
- H10K30/30
- H10K30/40
- H10K39/32
- CPC H10K85/6576
- CPC H10N50/10
- H10N69/00
- CPC H10N69/00
- H10N70/00
- C22C30/00
- H10B63/00
- H10B63/10
- H10N70/20
- CPC H10N70/8828
