SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME: abstract simplified (18062264)

• This abstract for appeared for patent application number 18062264 Titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME'

Simplified Explanation

The abstract describes a semiconductor memory device that includes various components such as a substrate, a bit line, storage contacts, a storage pad, and an information storage portion. The storage contact is made up of a lower storage contact and an upper storage contact, with the lower storage contact being partially located in the substrate. The upper surface of the lower storage contact is in contact with the lower surface of the upper storage contact. Both the lower and upper storage contacts are made of semiconductor material.

Original Abstract Submitted

A semiconductor memory device including a substrate including an active area defined by an element isolation layer, a bit line extending in a first direction on the substrate, a storage contact on each of both sides of the bit line and connected to the active area, a storage pad on the storage contact and connected to the storage contact and an information storage portion on the storage pad and connected to the storage pad, wherein the storage contact includes a lower storage contact and an upper storage contact on the lower storage contact, at least a portion of the lower storage contact is in the substrate, an entire upper surface of the lower storage contact is in contact with an entire lower surface of the upper storage contact, and each of the lower storage contact and the upper storage contact includes a semiconductor material may be provided.