SEMICONDUCTOR ENERGY LABORATORY CO., LTD. patent applications on August 1st, 2024
Patent Applications by SEMICONDUCTOR ENERGY LABORATORY CO., LTD. on August 1st, 2024
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.: 23 patent applications
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. has applied for patents in the areas of H01L29/786 (9), H01L29/04 (4), H01L27/12 (4), H01L29/24 (4), H01L29/66 (4) G06F3/013 (2), C23C14/3414 (1), H01L29/78693 (1), H10K85/636 (1), H10K59/353 (1)
With keywords such as: layer, device, semiconductor, provided, electrode, oxide, display, transistor, third, and region in patent application abstracts.
Patent Applications by SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s): Shunpei YAMAZAKI of Tokyo (JP) for semiconductor energy laboratory co., ltd., Tetsunori MARUYAMA of Atsugi (JP) for semiconductor energy laboratory co., ltd., Yuki IMOTO of Atsugi (JP) for semiconductor energy laboratory co., ltd., Hitomi SATO of Isehara (JP) for semiconductor energy laboratory co., ltd., Masahiro WATANABE of Tochigi (JP) for semiconductor energy laboratory co., ltd., Mitsuo MASHIYAMA of Oyama (JP) for semiconductor energy laboratory co., ltd., Kenichi OKAZAKI of Tochigi (JP) for semiconductor energy laboratory co., ltd., Motoki NAKASHIMA of Atsugi (JP) for semiconductor energy laboratory co., ltd., Takashi SHIMAZU of Tokyo (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): C23C14/34, B28B11/24, C04B35/453, C04B35/64, C23C14/08, H01L21/02, H01L29/24, H01L29/66, H01L29/786
CPC Code(s): C23C14/3414
Abstract: there have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. an oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. the target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
Inventor(s): Yoshiharu HIRAKATA of Ebina (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): G02F1/1333, G06F1/16, H04M1/02, H05K1/02
CPC Code(s): G02F1/133308
Abstract: a novel foldable display device or an electronic device using the same, e.g., a portable information processor or a portable communication information device, is provided. a foldable display device of which a display panel can be folded n times (n≥1, and n is a natural number) at a curvature radius of greater than or equal to 1 mm and less than or equal to 100 mm is obtained. the display device can be miniaturized by being foldable. in addition, in the state where the flexible display panel is opened, display which is unbroken and continuous over a plurality of housings is possible. the plurality of housings can store a circuit, an electronic component, a battery and the like inside as appropriate, and the thickness of each housing can be small.
20240256033. ELECTRONIC DEVICE_simplified_abstract_(semiconductor energy laboratory co., ltd.)
Inventor(s): Hiromichi GODO of Isehara (JP) for semiconductor energy laboratory co., ltd., Yoshiyuki KUROKAWA of Sagamihara (JP) for semiconductor energy laboratory co., ltd., Seiko INOUE of Atsugi (JP) for semiconductor energy laboratory co., ltd., Kazuaki OHSHIMA of Atsugi (JP) for semiconductor energy laboratory co., ltd., Shunpei YAMAZAKI of Setagaya (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): G06F3/01, G06T1/20, G06T7/73, G06V10/141, G06V40/18, H04N23/611, H04N23/617, H04N23/90
CPC Code(s): G06F3/013
Abstract: an electronic device that enables smooth communication is provided. the electronic device includes a display portion including a first camera; a second camera; and an image processing portion. the second camera is positioned in a region not overlapping with the display portion. the first camera has a function of generating a first image of a subject, and the second camera has a function of generating a second image of the subject. the image processing portion includes a generator that performs learning using training data. the training data includes an image including a person's face. the image processing portion has a function of making the first image clear when the first image is input to the generator and a function of tracking the gaze of the subject on the basis of the second image.
20240256037. ELECTRONIC DEVICE_simplified_abstract_(semiconductor energy laboratory co., ltd.)
Inventor(s): Yoshiyuki KUROKAWA of Sagamihara (JP) for semiconductor energy laboratory co., ltd., Hiromichi GODO of Isehara (JP) for semiconductor energy laboratory co., ltd., Kouhei TOYOTAKA of Atsugi (JP) for semiconductor energy laboratory co., ltd., Kazuki TSUDA of Atsugi (JP) for semiconductor energy laboratory co., ltd., Satoru OHSHITA of Atsugi (JP) for semiconductor energy laboratory co., ltd., Hidefumi RIKIMARU of Atsugi (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): G06F3/01, G02B27/01, G09G3/00, G09G3/3225, H01L27/12, H01L29/786, H10K59/121
CPC Code(s): G06F3/013
Abstract: to provide a novel electronic device. the electronic device includes a housing and a display device. the display device includes a first layer, a second layer, and a third layer. the first layer, the second layer, and the third layer are provided in different layers. the first layer includes a driver circuit and an arithmetic circuit. the second layer includes pixel circuits and a cell array. the third layer includes light-receiving devices and light-emitting devices. the pixel circuits each have a function of controlling light emission of the light-emitting device. the driver circuit has a function of controlling the pixel circuits. the arithmetic circuit has a function of performing arithmetic processing on the basis of first data corresponding to currents output from the light-receiving devices and second data corresponding to a potential held in the cell array.
Inventor(s): Kengo AKIMOTO of Isehara (JP) for semiconductor energy laboratory co., ltd., Junpei MOMO of Sagamihara (JP) for semiconductor energy laboratory co., ltd., Takahiro FUKUTOME of Atsugi (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): G06T11/60, G06F40/40, G06T7/73, G06T11/20
CPC Code(s): G06T11/60
Abstract: text is generated from an object. text is generated from a first object. the first object includes a second object and a third object. a step of detecting coordinate data of the second object is included. a step of detecting coordinate data of the third object is included. a step of extracting positional relation between the second object and the third object from coordinate data is included. a step of converting the extracted positional relation into graph data is included. a step of generating text about the positional relation between the second object and the third object from graph data is included.
20240257671. ELECTRONIC DEVICE_simplified_abstract_(semiconductor energy laboratory co., ltd.)
Inventor(s): Shunpei YAMAZAKI of Setagaya, Tokyo (JP) for semiconductor energy laboratory co., ltd., Kenichi OKAZAKI of Atsugi, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Satoru IDOJIRI of Tochigi, Tochigi (JP) for semiconductor energy laboratory co., ltd., Hiroki ADACHI of Tochigi, Tochigi (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): G09F9/30, G09F9/33
CPC Code(s): G09F9/301
Abstract: one embodiment of the present invention provides a novel display apparatus that is highly convenient or reliable. the display apparatus includes a plurality of flexible substrates over each of which a plurality of light-emitting diode chips are mounted, a substrate provided with a nitride film, and a resin between the flexible substrates and the substrate provided with a nitride film. light emitted from the light-emitting diode chips passes through the substrate provided with a nitride film.
Inventor(s): Yuto YAKUBO of Atsugi (JP) for semiconductor energy laboratory co., ltd., Kouhei TOYOTAKA of Isehara (JP) for semiconductor energy laboratory co., ltd., Seiko INOUE of Atsugi (JP) for semiconductor energy laboratory co., ltd., Yoshiyuki KUROKAWA of Sagamihara (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): G09G3/3233
CPC Code(s): G09G3/3233
Abstract: a semiconductor device including a display pixel circuit and an imaging pixel circuit is provided. the semiconductor device includes first and second circuits; the first circuit includes a light-emitting device; and the second circuit includes a light-receiving device, first to fifth transistors, and a first capacitor. the light-receiving device includes first and second terminals, and the light-emitting device includes third and fourth terminals. a first terminal of the first transistor is electrically connected to a first terminal of the second transistor, and a gate of the second transistor is electrically connected to a first terminal of the third transistor and a first terminal of the first capacitor. a second terminal of the first capacitor is electrically connected to a first terminal of the fourth transistor and a first terminal of the fifth transistor. a second terminal of the fifth transistor is electrically connected to the first terminal of the light-receiving device, the second terminal of the light-receiving device is electrically connected to the third terminal of the light-emitting device, and the fourth terminal of the light-emitting device is electrically connected to a wiring.
Inventor(s): Shunpei YAMAZAKI of Setagaya (JP) for semiconductor energy laboratory co., ltd., Junichiro SAKATA of Atsugi (JP) for semiconductor energy laboratory co., ltd., Hiroki OHARA of Sagamihara (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H01L21/465, H01L21/02, H01L21/28, H01L21/324, H01L21/477, H01L29/04, H01L29/66, H01L29/786
CPC Code(s): H01L21/465
Abstract: a semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. an oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
Inventor(s): Shunpei YAMAZAKI of Setagaya (JP) for semiconductor energy laboratory co., ltd., Jun KOYAMA of Sagamihara (JP) for semiconductor energy laboratory co., ltd., Hiroyuki MIYAKE of Atsugi (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H01L27/12, H01L21/02, H01L27/088, H01L29/04, H01L29/24, H01L29/49, H01L29/786
CPC Code(s): H01L27/1225
Abstract: an oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. an intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.
Inventor(s): Hajime KIMURA of Atsugi (JP) for semiconductor energy laboratory co., ltd., Atsushi UMEZAKI of Isehara (JP) for semiconductor energy laboratory co., ltd., Shunpei YAMAZAKI of Setagaya (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H01L27/12, G02F1/1333, G02F1/1334, G02F1/1343, G02F1/1362, G02F1/1368, G09G3/20, G09G3/36, H01L21/8234, H01L29/24, H01L29/786
CPC Code(s): H01L27/124
Abstract: an object is to improve the drive capability of a semiconductor device. the semiconductor device includes a first transistor and a second transistor. a first terminal of the first transistor is electrically connected to a first wiring. a second terminal of the first transistor is electrically connected to a second wiring. a gate of the second transistor is electrically connected to a third wiring. a first terminal of the second transistor is electrically connected to the third wiring. a second terminal of the second transistor is electrically connected to a gate of the first transistor. a channel region is formed using an oxide semiconductor layer in each of the first transistor and the second transistor. the off-state current of each of the first transistor and the second transistor per channel width of 1 �m is 1 aa or less.
Inventor(s): Shunpei YAMAZAKI of Tokyo (JP) for semiconductor energy laboratory co., ltd., Toshihiko TAKEUCHI of Atsugi (JP) for semiconductor energy laboratory co., ltd., Naoto YAMADE of Isehara (JP) for semiconductor energy laboratory co., ltd., Hiroshi FUJIKI of Kudamatsu (JP) for semiconductor energy laboratory co., ltd., Tomoaki MORIWAKA of Isehara (JP) for semiconductor energy laboratory co., ltd., Shunsuke KIMURA of Isehara (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H01L29/66, H01L29/10, H01L29/49
CPC Code(s): H01L29/66969
Abstract: a semiconductor device that can be miniaturized or highly integrated is provided.
Inventor(s): Shunpei YAMAZAKI of Tokyo (JP) for semiconductor energy laboratory co., ltd., Toshihiko TAKEUCHI of Atsugi (JP) for semiconductor energy laboratory co., ltd., Naoto YAMADE of Isehara (JP) for semiconductor energy laboratory co., ltd., Hiroshi FUJIKI of Kudamatsu (JP) for semiconductor energy laboratory co., ltd., Tomoaki MORIWAKA of Isehara (JP) for semiconductor energy laboratory co., ltd., Shunsuke KIMURA of Isehara (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H01L29/66, H01L29/10, H01L29/49
CPC Code(s): H01L29/66969
Abstract: the semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.
Inventor(s): Shunpei YAMAZAKI of Tokyo (JP) for semiconductor energy laboratory co., ltd., Jun Koyama of Sagamihara (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H01L29/786, H01L29/04, H01L29/24, H01L29/45, H01L29/66
CPC Code(s): H01L29/78618
Abstract: a semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. the source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 mhz to 300 ghz and a mixed gas of oxygen and argon.
20240258433. SEMICONDUCTOR DEVICE_simplified_abstract_(semiconductor energy laboratory co., ltd.)
Inventor(s): Shunpei YAMAZAKI of Tokyo (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H01L29/786, G02F1/1368, H01L29/417, H01L29/78
CPC Code(s): H01L29/78648
Abstract: a semiconductor device that can operate at high speed or having high strength against stress is provided. one embodiment of the present invention is a semiconductor device including a semiconductor film including a channel formation region and a pair of impurity regions between which the channel formation region is positioned; a gate electrode overlapping side and top portions of the channel formation region with an insulating film positioned between the gate electrode and the side and top portions; and a source electrode and a drain electrode in contact with side and top portions of the pair of impurity regions.
Inventor(s): Shunpei YAMAZAKI of Tokyo (JP) for semiconductor energy laboratory co., ltd., Masayuki SAKAKURA of Isehara (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H01L29/786, H01L21/8238, H01L27/06, H01L27/092, H01L27/12, H01L29/04, H01L29/10, H01L29/417, H01L29/423
CPC Code(s): H01L29/78693
Abstract: a transistor with small parasitic capacitance can be provided. a transistor with high frequency characteristics can be provided. a semiconductor device including the transistor can be provided. provided is a transistor including an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. the first conductor has a first region where the first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween; a second region where the first conductor overlaps with the second conductor with the first and second insulators positioned therebetween; and a third region where the first conductor overlaps with the third conductor with the first and second insulators positioned therebetween. the oxide semiconductor including a fourth region where the oxide semiconductor is in contact with the second conductor; and a fifth region where the oxide semiconductor is in contact with the third conductor.
Inventor(s): Shunpei YAMAZAKI of Setagaya, Tokyo (JP) for semiconductor energy laboratory co., ltd., Tetsuya KAKEHATA of Isehara, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Teppei OGUNI of Atsugi, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Tatsuyoshi TAKAHASHI of Atsugi, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Kazuya SHIMADA of Atsugi, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Yohei MOMMA of Isehara, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Atsushi KAWATSUKI of Yokohama, Kanagawa (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H01M4/13, H01G11/24, H01G11/56, H01G11/66, H01M4/02, H01M4/36, H01M4/62
CPC Code(s): H01M4/13
Abstract: electrodes and a secondary battery having high capacity density and being excellent in terms of rapid charging and rapid discharging are provided. the battery includes a positive electrode and a negative electrode. the positive electrode includes a current collector, a first layer overlapping with the current collector, and a second layer overlapping with the first layer. the first layer contains a first active material with a first particle diameter and the second layer contains a second active material with a second particle diameter. the first particle diameter is smaller than the second particle diameter. it is preferable that the second active material include a surface portion and an inner portion, the surface portion be a region within a depth of 10 nm or less from a surface of the second active material to the inner portion, and that the surface portion and the inner portion be topotaxy.
Inventor(s): Kazuhei NARITA of Atsugi (JP) for semiconductor energy laboratory co., ltd., Ryota TAJIMA of Isehara (JP) for semiconductor energy laboratory co., ltd., Teppei OGUNI of Atsugi (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H01M10/0569, G04G19/00, H01G11/28, H01G11/32, H01G11/52, H01G11/60, H01G11/62, H01G11/84, H01G11/86, H01M4/36, H01M4/525, H01M4/587, H01M4/66, H01M10/0525, H01M10/0568, H01M50/414, H01M50/429, H01M50/44
CPC Code(s): H01M10/0569
Abstract: to provide a power storage device whose charge and discharge characteristics are unlikely to be degraded by heat treatment. to provide a power storage device that is highly safe against heat treatment. the power storage device includes a positive electrode, a negative electrode, a separator, an electrolytic solution, and an exterior body. the separator is located between the positive electrode and the negative electrode. the separator contains polyphenylene sulfide or solvent-spun regenerated cellulosic fiber. the electrolytic solution contains a solute and two or more kinds of solvents. the solute contains libeta. one of the solvents is propylene carbonate.
20240260257. SEMICONDUCTOR DEVICE_simplified_abstract_(semiconductor energy laboratory co., ltd.)
Inventor(s): Hitoshi KUNITAKE of Machida (JP) for semiconductor energy laboratory co., ltd., Yuki ITO of Nagoya (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H10B12/00, H01L29/786
CPC Code(s): H10B12/50
Abstract: a semiconductor device that can be subjected to multipoint measurement is provided. the semiconductor device includes a first layer and a second layer over the first layer. the first layer includes a first multiplexer, a second multiplexer, m (m is an integer of 1 or more) analog switches electrically connected to the first multiplexer, and n (n is an integer of 1 or more) analog switches electrically connected to the second multiplexer. the second layer includes m�n transistors. each of the m analog switches is electrically connected to n transistors, and each of the n analog switches is electrically connected to m transistors.
20240260287. Display Apparatus_simplified_abstract_(semiconductor energy laboratory co., ltd.)
Inventor(s): Daisuke KUBOTA of Atsugi, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Kenichi OKAZAKI of Atsugi, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Ryo HATSUMI of Hadano, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Koji KUSUNOKI of Isehara, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Shunpei YAMAZAKI of Setagaya, Tokyo (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H10K39/34
CPC Code(s): H10K39/34
Abstract: a display apparatus having an image capturing function is provided. a display apparatus or an image capturing device with a high aperture ratio is provided. the display apparatus includes a light-emitting element, a light-receiving element, a first resin layer, and a light-blocking layer. a first pixel electrode, a first organic layer, and a common electrode are stacked in this order in the light-emitting element. a second pixel electrode, a second organic layer, and the common electrode are stacked in this order in the light-receiving element. the first organic layer includes a first light-emitting layer, and the second organic layer includes a photoelectric conversion layer. the light-blocking layer includes a portion positioned, in a plan view, between the light-emitting element and the light-receiving element. the first resin layer is provided to cover the light-emitting element and the light-receiving element. the first resin layer includes portions positioned between the light-emitting element and the light-blocking layer and between the light-receiving element and the light-blocking layer. furthermore, the first resin layer includes a portion with thickness smaller than an arrangement interval between the light-emitting element and the light-receiving element in a region overlapping with the light-blocking layer.
Inventor(s): Shunpei YAMAZAKI of Setagaya, Tokyo (JP) for semiconductor energy laboratory co., ltd., Hajime KIMURA of Atsugi, Kanagawa (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H10K59/127, H10K50/19, H10K59/40, H10K77/10
CPC Code(s): H10K59/1275
Abstract: a display apparatus including a plurality of antennas overlapping with a display portion is provided. the display apparatus includes a first substrate and a second substrate each having flexibility. a conductive layer and a plurality of display elements are provided between the first substrate and the second substrate. a region where the first substrate and the second substrate overlap with each other includes a curved portion. the conductive layer including a region overlapping with the region includes a region with a curvature. the plurality of display elements are provided between the first substrate and the conductive layer. the conductive layer includes a plurality of openings. the display element includes a region overlapping with the opening. the conductive layer has a function of an antenna.
Inventor(s): Takayuki IKEDA of Atsugi, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Yoshiaki OIKAWA of Atsugi, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Natsuko TAKASE of Isehara, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Kensuke YOSHIZUMI of Atsugi, Kanagawa (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H10K59/35
CPC Code(s): H10K59/351
Abstract: a high-resolution display device having a light detection function is provided. the display device includes first to fourth subpixels arranged to be adjacent to one another in this order in a first direction; the first subpixel and the second subpixel emit light of the same color; the third subpixel and the fourth subpixel detect light of the same color; the first subpixel includes a first light-emitting device and a first coloring layer overlapping with the first light-emitting device; the second subpixel includes a second light-emitting device and the first coloring layer overlapping with the second light-emitting device; the third subpixel includes a first light-receiving device; the fourth subpixel includes a second light-receiving device; the first light-emitting device and the second light-emitting device have a function of being driven independently; and the first light-receiving device and the second light-receiving device have a function of being driven independently.
Inventor(s): Yoshiyuki KUROKAWA of Sagamihara (JP) for semiconductor energy laboratory co., ltd., Sachiko KAWAKAMI of Atsugi (JP) for semiconductor energy laboratory co., ltd., Nobuharu OHSAWA of Zama (JP) for semiconductor energy laboratory co., ltd., Daisuke KUBOTA of Atsugi (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H10K59/35, H10K39/34
CPC Code(s): H10K59/353
Abstract: a high-resolution display apparatus having a light detection function is provided. the display apparatus includes a display portion in which a first arrangement pattern and a second arrangement pattern are repeatedly placed in a first direction. in the first arrangement pattern, a first subpixel and a second subpixel are repeatedly arranged in a second direction. in the second arrangement pattern, a third subpixel, a fourth subpixel, and a fifth subpixel are repeatedly arranged in the second direction. each of the first subpixel to the fourth subpixel includes a light-emitting device. the fifth subpixel includes a light-receiving device. three or all of light-emitting devices included in the four subpixels can include el layers with the same structure.
Inventor(s): Yasuhiro NIIKURA of Komae, Tokyo (JP) for semiconductor energy laboratory co., ltd., Daisuke KUBOTA of Atsugi, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Taisuke KAMADA of Niiza, Saitama (JP) for semiconductor energy laboratory co., ltd., Sachiko KAWAKAMI of Atsugi, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Anna TADA of Isehara, Kanagawa (JP) for semiconductor energy laboratory co., ltd., Satoshi SEO of Sagamihara, Kanagawa (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H10K85/60, H10K30/30, H10K39/34
CPC Code(s): H10K85/636
Abstract: a light-receiving device with a novel structure is provided. the provided light-receiving device includes a light-receiving layer between a pair of electrodes. the light-receiving layer includes an active layer. the active layer contains a first organic compound and a second organic compound. an absorption spectrum of the first organic compound has one or more peaks. at least one peak wavelength of the peaks is greater than or equal to 400 nm and less than or equal to 700 nm. the homo level of the second organic compound is higher than the homo level of the first organic compound. the difference between the homo level of the first organic compound and the homo level of the second organic compound is preferably higher than or equal to 0.2 ev and lower than or equal to 1.5 ev and further preferably higher than or equal to 0.4 ev and lower than or equal to 1.5 ev.
Inventor(s): Toshiki SASAKI of Kawasaki (JP) for semiconductor energy laboratory co., ltd., Hiromitsu KIDO of Atsugi (JP) for semiconductor energy laboratory co., ltd., Nobuharu OHSAWA of Zama (JP) for semiconductor energy laboratory co., ltd.
IPC Code(s): H10K85/60, C09K11/06, H10K50/13, H10K85/30, H10K85/40, H10K101/10
CPC Code(s): H10K85/6572
Abstract: a light-emitting device with high heat resistance in a fabrication process is provided. the light-emitting device includes a light-emitting layer and a first layer between a first electrode and a second electrode. the first layer is positioned between the light-emitting layer and the second electrode and is in contact with the light-emitting layer. the light-emitting layer contains a light-emitting substance, a first organic compound, and a second organic compound. the first layer contains a third organic compound different from the first organic compound and the second organic compound. the light-emitting substance emits blue phosphorescent light. the third organic compound includes a bicarbazole skeleton and a heteroaromatic ring skeleton having one selected from a pyridine ring, a diazine ring, and a triazine ring.
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. patent applications on August 1st, 2024
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- C23C14/34
- B28B11/24
- C04B35/453
- C04B35/64
- C23C14/08
- H01L21/02
- H01L29/24
- H01L29/66
- H01L29/786
- CPC C23C14/3414
- Semiconductor energy laboratory co., ltd.
- G02F1/1333
- G06F1/16
- H04M1/02
- H05K1/02
- CPC G02F1/133308
- G06F3/01
- G06T1/20
- G06T7/73
- G06V10/141
- G06V40/18
- H04N23/611
- H04N23/617
- H04N23/90
- CPC G06F3/013
- G02B27/01
- G09G3/00
- G09G3/3225
- H01L27/12
- H10K59/121
- G06T11/60
- G06F40/40
- G06T11/20
- CPC G06T11/60
- G09F9/30
- G09F9/33
- CPC G09F9/301
- G09G3/3233
- CPC G09G3/3233
- H01L21/465
- H01L21/28
- H01L21/324
- H01L21/477
- H01L29/04
- CPC H01L21/465
- H01L27/088
- H01L29/49
- CPC H01L27/1225
- G02F1/1334
- G02F1/1343
- G02F1/1362
- G02F1/1368
- G09G3/20
- G09G3/36
- H01L21/8234
- CPC H01L27/124
- H01L29/10
- CPC H01L29/66969
- H01L29/45
- CPC H01L29/78618
- H01L29/417
- H01L29/78
- CPC H01L29/78648
- H01L21/8238
- H01L27/06
- H01L27/092
- H01L29/423
- CPC H01L29/78693
- H01M4/13
- H01G11/24
- H01G11/56
- H01G11/66
- H01M4/02
- H01M4/36
- H01M4/62
- CPC H01M4/13
- H01M10/0569
- G04G19/00
- H01G11/28
- H01G11/32
- H01G11/52
- H01G11/60
- H01G11/62
- H01G11/84
- H01G11/86
- H01M4/525
- H01M4/587
- H01M4/66
- H01M10/0525
- H01M10/0568
- H01M50/414
- H01M50/429
- H01M50/44
- CPC H01M10/0569
- H10B12/00
- CPC H10B12/50
- H10K39/34
- CPC H10K39/34
- H10K59/127
- H10K50/19
- H10K59/40
- H10K77/10
- CPC H10K59/1275
- H10K59/35
- CPC H10K59/351
- CPC H10K59/353
- H10K85/60
- H10K30/30
- CPC H10K85/636
- C09K11/06
- H10K50/13
- H10K85/30
- H10K85/40
- H10K101/10
- CPC H10K85/6572
