SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME: abstract simplified (18056736)

• This abstract for appeared for patent application number 18056736 Titled 'SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME'

Simplified Explanation

This abstract describes semiconductor devices that have been improved in terms of performance and reliability. These devices have an active pattern that extends in a certain direction. On this active pattern, there are gate structures that are spaced apart from each other. Additionally, there is a source/drain pattern and a source/drain contact on the active pattern. The contact liner extends along the sidewall of the source/drain contacts. What sets these devices apart is the carbon concentration of the contact liner. At different points of the contact liner, the carbon concentration varies. The first point is at a lower height from the upper surface of the active pattern compared to the second point. This difference in carbon concentration and height contributes to the improved performance and reliability of these semiconductor devices.

Original Abstract Submitted

Semiconductor devices with improved performance and reliability and methods for forming the same are provided. The semiconductor devices include an active pattern extending in a first direction, gate structures spaced apart from each other in the first direction on the active pattern, a source/drain pattern on the active pattern, a source/drain contact on the source/drain pattern, and a contact liner extending along a sidewall of the source/drain contacts. A carbon concentration of the contact liner at a first point of the contact liner is different from a carbon concentration of the contact liner at a second point of the contact liner, and the first point is at a first height from an upper surface of the active pattern, the second point is at a second height from the upper surface of the active pattern, and the first height is smaller than the second height.