SEMICONDUCTOR DEVICES: abstract simplified (18116537)

• This abstract for appeared for patent application number 18116537 Titled 'SEMICONDUCTOR DEVICES'

Simplified Explanation

This abstract describes a semiconductor device that consists of a metal silicide layer on a substrate. On top of the metal silicide layer, there is a contact plug structure. This contact plug structure includes a metal pattern made of a first metal, and a first barrier pattern that covers the lower surface and sidewall of the metal pattern. The first barrier pattern is in contact with the metal silicide layer and is made of a second metal. The metal silicide layer itself is composed of silicon, the second metal, and a third metal that is different from the second metal.

Original Abstract Submitted

A semiconductor device includes a metal silicide layer on a substrate, and a contact plug structure on the metal silicide layer. The contact plug structure includes a metal pattern including a first metal, and a first barrier pattern covering a lower surface and a sidewall of the metal pattern and contacting the metal silicide layer. The first barrier pattern includes a second metal. The metal silicide layer includes silicon, the second metal, and a third metal different from the second metal.