SEMICONDUCTOR DEVICE: abstract simplified (18089956)

• This abstract for appeared for patent application number 18089956 Titled 'SEMICONDUCTOR DEVICE'

Simplified Explanation

The abstract describes a semiconductor device that includes a fin pattern on a substrate, with two active layers on top of the fin pattern. The active layers are arranged in a specific structure and are surrounded by two gates that intersect them. The first gate surrounds the upper and lower surfaces as well as the side surfaces of both active layers, while the second gate is parallel to the first gate. The first active layer extends from an overlapping region with the first gate, while the second active layer extends from an overlapping region with the second gate. The length of the first region of the first active layer is longer than the length of the first region of the second active layer.

Original Abstract Submitted

A semiconductor device includes a first fin pattern protruding from a substrate and extending in a first direction; first and second active layers extending in the first direction on the first fin pattern, the second active layer being at a level higher than a level of the first active layer, the first and second active layers forming a first active layer structure; a first gate intersecting the first and second active layers, surrounding upper and lower surfaces and opposing side surfaces of each of the first and second active layers, and extending in a second direction; and a second gate intersecting the first and second active layers, surrounding upper and lower surfaces and opposing side surfaces of each of the first and second active layers, extending in the second direction, and disposed to be parallel to the first gate. The first active layer includes a first region extending from a first overlapping region of the first active layer overlapping the first gate by a first length in a direction away from the second gate, and the second active layer includes a first region extending from a first overlapping region of the second active layer overlapping the first gate by a second length in a direction away from the second gate, the second length shorter than the first length.