SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
Patent Applications by SAMSUNG ELECTRONICS CO., LTD. on January 25th, 2024
SAMSUNG ELECTRONICS CO., LTD.: 174 patent applications
SAMSUNG ELECTRONICS CO., LTD. has applied for patents in the areas of H01L23/00 (13), H01L24/16 (12), H01L25/065 (11), H10B80/00 (10), H01L29/775 (10)
With keywords such as: layer, device, including, semiconductor, substrate, data, based, region, information, and pattern in patent application abstracts.
Patent Applications by SAMSUNG ELECTRONICS CO., LTD.
Inventor(s): Hongseok CHOI of Suwon-si (KR) for samsung electronics co., ltd., Sunghyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Elijah KIM of Suwon-si (KR) for samsung electronics co., ltd., Juyeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Junwon SEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A47L9/00, A47L11/282, A47L11/40, A47L9/28, B65G33/02
Abstract: a docking station for a robotic vacuum cleaner may include a docking unit having a traveling path for the robotic vacuum cleaner to enter the docking station and travel to a mopping cloth attachment position where a mopping cloth is attachable to the vacuum cleaner. the docking station also includes a mopping cloth supply unit disposed above the docking unit and configured to receive a plurality of mopping cloths, and the plurality of mopping cloths are side by side along a horizontal direction. the mopping cloth supply unit may include a mopping cloth transporting unit that are configured so that the mopping cloth transporting unit sequentially transports each mopping cloth of the plurality of mopping cloths received by the mopping cloth supply unit along the horizontal direction to an outlet to be discharged through the outlet to the mopping cloth attachment position.
Inventor(s): Sunghyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Elijah KIM of Suwon-si (KR) for samsung electronics co., ltd., Juyeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Junwon SEO of Suwon-si (KR) for samsung electronics co., ltd., Hongseok CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A47L11/40, A47L11/282
Abstract: a robot cleaner includes a motor, a rotating-shaft member, and a rotation member coupled to the rotating-shaft member and including a cleaning member coupling configured to be detachably coupled to a plurality of cleaning members. the motor, rotating-shaft member, and the rotation member are configured so that the motor is drivable to rotate the rotating-shaft member and thereby cause the rotation member to move in a first direction or a second direction opposite to the first direction, along a longitudinal direction of the rotating-shaft member. in a case that the rotation member moves in the first direction with the cleaning member coupling detachably coupled to the plurality of cleaning members, at least one cleaning member of the plurality of cleaning members becomes detached, and is thereby released, from the cleaning member coupling.
20240025002.EXTERIOR MATERIAL FOR HOME APPLIANCE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Minkyung LEE of Suwon-si (KR) for samsung electronics co., ltd., Dosoo SUNG of Suwon-si (KR) for samsung electronics co., ltd., Kyunghwan LEE of Suwon-si (KR) for samsung electronics co., ltd., Youngdeog KOH of Suwon-si (KR) for samsung electronics co., ltd., Kwangjoo KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B24B7/19, D06F39/12, A46D1/00, A46B9/00
Abstract: an exterior material may be configured to form an exterior of a home appliance, the exterior material includes a base material having a hierarchical circular structure pattern on the surface. the hierarchical circular structure pattern may include a plurality of circular structures having diameters different from each other, and a pattern density may be, in percentage of area of the surface, about 20 to 90%.
Inventor(s): Inhwan LEE of Seoul (KR) for samsung electronics co., ltd., Kangbin BAE of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): C23C14/08, C23C14/30, C23C14/02
Abstract: a plasma-resistant member includes a lower layer disposed on a substrate and including yttrium oxide, a buffer layer disposed on the lower layer, and an upper layer disposed on the buffer layer and including yttrium oxyfluoride or fluorine-rich yttrium oxide, wherein the buffer layer has a thermal expansion coefficient between a thermal expansion coefficient of the upper layer and a thermal expansion coefficient of the lower layer.
Inventor(s): Suncheul Kim of Suwon-si (KR) for samsung electronics co., ltd., Donghyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Uihyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Donghoon Han of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C23C16/52, C23C16/505, C23C16/448
Abstract: provided is a flow rate control method, including: supplying fluid from a valve to a first sensor; measuring, by the first sensor, a first temperature of the fluid, and heating the fluid; measuring, by a second sensor, a second temperature of the heated fluid, and determining, by a controller, a first flow rate of the fluid based on comparison between the first temperature and the second temperature; supplying the fluid to a chamber and supplying an ignition voltage to the chamber through a radio frequency (rf) power source; measuring, by a third sensor, the ignition voltage; comparing, by the controller, the ignition voltage and a reference voltage to determine a second flow rate of the fluid; and controlling a supply of the fluid from the valve based on at least one of the first flow rate and or the second flow rate.
Inventor(s): Jungkuk LEE of Suwon-si (KR) for samsung electronics co., ltd., Kitaek SONG of Suwon-si (KR) for samsung electronics co., ltd., Jongkuk WON of Suwon-si (KR) for samsung electronics co., ltd., Sangmi YOON of Suwon-si (KR) for samsung electronics co., ltd., Junhyun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C23C16/52, C23C16/44
Abstract: an exhaust method of a substrate processing apparatus, includes: measuring a first flow rate for each of process gases included in a mixed gas supplied to a process chamber; determining, based on the first flow rate, a lower explosion limit of the mixed gas and a first volume percentage of a combustible process gas among the process gases; determining a supply flow rate of a first dilution gas based on the first volume percentage and the lower explosion limit; and supplying, at the determined supply flow rate of the first dilution gas, the first dilution gas to the mixed gas in the process chamber.
Inventor(s): Seunghun CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jeongnam KIM of Suwon-si (KR) for samsung electronics co., ltd., Wanhee LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaepoong LEE of Suwon-si (KR) for samsung electronics co., ltd., Kwangmin CHUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): D06F39/02, D06F39/08, D06F33/43
Abstract: a washing machine including a tub, a drum configured to be rotatable inside the tub, a detergent supply device configured to supply a detergent into the tub, the detergent supply device including a storage area, a pump motor configured to pump a liquid in the storage area, and a discharge port configured to guide the liquid pumped by the pump motor into the tub; a user interface configured to receive a user input to request a cleaning of the storage area, and a controller configured to detect a cleaning condition of the storage area based on a load of the pump motor, and based on the user input being received, perform a cleaning process of the storage area.
20240026949.SHOCK ABSORBER_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jungjae Kim of Suwon-si (KR) for samsung electronics co., ltd., Muyer Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F16F15/03, F16F6/00
Abstract: a shock absorber includes a cylinder including a shock-absorbing surface configured to relieve an impact of an object, a piston rod including a first end receiving the object and, in response to the impact of the object, movably inserted into an inner space of the cylinder in an axial direction of the cylinder, a magnet installed at a second end of the piston rod opposite to the first end of the piston rod to be moved together with the piston rod, an electromagnet coil configured to generate a repulsive force against the magnet, and a sensor configured to detect the magnet and cause the electromagnet coil to receive a current from a power source.
Inventor(s): Abhishek Sehgal of Frisco TX (US) for samsung electronics co., ltd., Vishnu Vardhan Ratnam of Plano TX (US) for samsung electronics co., ltd., Guanbo Chen of McKinney TX (US) for samsung electronics co., ltd., Hao Chen of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): G01S7/00, G01S7/02, G01S13/10
Abstract: a method includes obtaining radar pulse configuration information at an electronic device. the method also includes generating a data unit of a wi-fi communications protocol based on the radar pulse configuration information, the data unit comprising a preamble and a data field. the method also includes transmitting at least one radar pulse within a duration of the data field. the method also includes receiving at least one reflection of the at least one radar pulse within the duration of the data field. the method also includes processing the at least one reflection to determine a distance between an object and the electronic device.
Inventor(s): Youngho JUNG of Suwon-si (KR) for samsung electronics co., ltd., Hyochul Kim of Suwon-si (KR) for samsung electronics co., ltd., Younggeun ROH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02B5/20, H04N25/13, G02B5/26
Abstract: a spectral filter includes: a plurality of first filter arrays, each of the plurality of first filter arrays including a plurality of band filters; and a plurality of second filter arrays respectively provided on the plurality of first filter arrays, each of the plurality of second filter arrays including a plurality of unit filters respectively corresponding to the plurality of band filters. each of the plurality of unit filters includes: a first reflecting plate; a second reflecting plate disposed above the first reflecting plate; and a plurality of cavities disposed between the first and second reflecting plates, each of the plurality of cavities having central wavelengths of different bands. each of the plurality of cavities includes a cavity lower layer, a cavity upper layer, and a dielectric separation layer disposed between the cavity lower layer and the cavity upper layer.
Inventor(s): Youngmo JEONG of Suwon-si (KR) for samsung electronics co., ltd., Jongchul CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02B27/01
Abstract: a lens includes at least one lens element configured to interface with a user's pupil along an optical-axis direction from a side of the user's pupil to a side of a display surface. the at least one lens element defines an aperture stop that is configured to be at least a portion of an area for facing the user's pupil. the aperture stop defines a plurality of sub-stop areas corresponding to a plurality of gaze directions within an entire viewing angle of the user with respect to the optical-axis direction. an orientation of the plurality of sub-stop areas are based on a human visual system.
Inventor(s): Doukyoung SONG of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Sangeun MUN of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Seunghoon HAN of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Jina JEON of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): G02C11/00, G02C5/14, G02C7/10, G02B1/00, G02B27/00, G02B1/14, G02B3/00, G02B5/00
Abstract: a wearable electronic device may include a frame, a first temple connected to one side of the frame, a second temple connected to an opposite side of the frame, and a camera located in one region of the frame. the camera may include a lens module including at least one meta-lens in which nanostructures are arranged in two dimensions and an image sensor that detects light guided by the lens module.
20240027828.DISPLAY APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Daesik KIM of Suwon-si (KR) for samsung electronics co., ltd., Kyonghyong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jongil KIM of Suwon-si (KR) for samsung electronics co., ltd., Yasuhiro NISHIDA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02F1/13357, G02F1/1335
Abstract: the present disclosure provides display apparatuses including a backlight unit (blu). in some embodiments, the display apparatus includes a liquid crystal panel, and a blu configured to provide light to the liquid crystal panel. the blu includes a substrate, a plurality of light-emitting diodes (leds) on the substrate and configured to emit the light, a plurality of refractive covers, and a plurality of reflectors on the substrate disposed between the plurality of leds and configured to reflect the light emitted from the plurality of leds. each refractive cover is disposed on a corresponding led of the plurality of leds.
20240027832.DISPLAY APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Youngmin LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaewoo Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyungsuk Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyukjun Jang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02F1/13357
Abstract: a display apparatus includes: an optical member; a substrate provided at a rear side of the optical member, the substrate including a through-hole and a circuit pattern on a front surface of the substrate; a metal structure provided at a rear side of the substrate; and a supporter provided on the front surface of the substrate, wherein the supporter includes: a body supporting the optical member, the body being provided on the front surface of the substrate and aligned with the through-hole; a circuit pattern portion provided on the body and electrically connected to the circuit pattern on the front surface of the substrate; and a metal portion extending from a bottom surface of the body into the through-hole in a direction toward the metal structure, the metal portion being electrically connected to the circuit pattern portion and the metal structure.
Inventor(s): Hyungjong Bae of Suwon-si (KR) for samsung electronics co., ltd., Hyun Jung Hwang of Suwon-si (KR) for samsung electronics co., ltd., Heebom Kim of Suwon-si (KR) for samsung electronics co., ltd., Seong-Bo Shim of Suwon-si (KR) for samsung electronics co., ltd., Seungyoon Lee of Suwon-si (KR) for samsung electronics co., ltd., Woo-Yong Jung of Suwon-si (KR) for samsung electronics co., ltd., Chan Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F1/24, G03F1/42, G03F1/54, G03F1/80
Abstract: a reflective mask used in an euv exposure process includes a mask substrate, a reflective layer on the mask substrate, and an absorption layer on the reflective layer. the reflective mask includes a main region, an out-of-band region surrounding the main region, and an alignment mark region outside a periphery of the out-of-band region. the absorption layer in the alignment mark region includes an alignment mark and an anti-reflection pattern adjacent the alignment mark, and the anti-reflection pattern includes line-and-space patterns having a predetermined line width in the alignment mark region.
Inventor(s): Daeho YANG of Suwon-si (KR) for samsung electronics co., ltd., Sunil Kim of Seoul (KR) for samsung electronics co., ltd., Wontaek Seo of Yongin-si (KR) for samsung electronics co., ltd., Geeyoung Sung of Daegu (KR) for samsung electronics co., ltd., Bongsu Shin of Seoul (KR) for samsung electronics co., ltd., Jungkwuen An of Suwon-si (KR) for samsung electronics co., ltd., Jangwoo You of Seoul (KR) for samsung electronics co., ltd., Changkun Lee of Seoul (KR) for samsung electronics co., ltd., Jong-Young Hong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03H1/22, G06T7/55
Abstract: disclosed are a method and a system for processing a computer-generated hologram (cgh). the system for processing a cgh includes a cgh generation apparatus and a display apparatus. the cgh generation apparatus repeatedly performs a process of propagating object data from a first depth layer to a second depth layer, changing amplitude data of the object data to second predefined amplitude data, back-propagating the object data from the second depth layer to the first depth layer, and changing the amplitude data of the object data to first predefined amplitude data, and generates a cgh by using the object data.
Inventor(s): Jaemin CHUN of Suwon-si (KR) for samsung electronics co., ltd., Youngsun KIM of Seoul (KR) for samsung electronics co., ltd., Minseok HAN of Suwon-si (KR) for samsung electronics co., ltd., Segwon HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G05D1/02, G05D1/00, G06F3/0488, G10L25/78, G06V20/10, G06V40/10, B25J13/08, B25J13/00, B25J11/00, B25J9/16
Abstract: a robot includes a driver; a camera; and a processor configured to: during an interaction session in which a first user identified in an image obtained through the camera is set as an interaction subject, perform an operation corresponding to a user command received from the first user, and determine whether interruption by a second user identified in an image obtained through the camera occurs, and based on determining that the interruption by the second user occurred, control the driver such that the robot performs a feedback motion for the interruption.
20240028065.CLOCK MULTIPLEXING CIRCUIT_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yongun Jeong of Suwon-si (KR) for samsung electronics co., ltd., Donghyeok Jeong of Suwon-si (KR) for samsung electronics co., ltd., ChangSik Yoo of Suwon-si (KR) for samsung electronics co., ltd., Kihan Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F1/12
Abstract: disclosed is a clock multiplexing circuit which includes a first transistor that is between a first input terminal that receives a first input clock signal and an output terminal that outputs an output pulse signal and operates based on a logic level of a second input terminal receiving a second input clock signal, and a second transistor that is between the output terminal and a first voltage node and operates based on the logic level of the second input terminal. the first input clock signal and the second input clock signal have the same period and have different phases. the output pulse signal transitions to a first logic level at a first time when the first input clock signal transitions to the first logic level and transitions to a second logic level at a second time when the second input clock signal transitions to the first logic level.
Inventor(s): Hyunje CHO of Suwon-si (KR) for samsung electronics co., ltd., Jiwoo LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F1/20, G06F1/16
Abstract: according to an embodiment, an electronic device comprises: a housing comprising an opening; a cover for opening and closing the opening; and a link structure located inside the housing and connected to the cover, wherein the link structure may comprise: an actuator configured to output power based on the temperature sensed inside the housing; a first link configured to move in a first direction by means of the power; a second link having a resilient structure that, in response to the movement of the first link, is configured to transmit the power in a second direction perpendicular to the first direction and comprises a first spring and a second spring having different elastic forces; and a third link connected to the second link and the cover and configured to convert the cover from a closed state to an open state by transmitting the power in the first direction and a third direction perpendicular to the second direction.
Inventor(s): Priyabrata Parida of Garland TX (US) for samsung electronics co., ltd., Vutha Va of Plano TX (US) for samsung electronics co., ltd., Anum Ali of Plano TX (US) for samsung electronics co., ltd., Saifeng Ni of Santa Clara CA (US) for samsung electronics co., ltd., Boon Loong Ng of Plano TX (US) for samsung electronics co., ltd.
IPC Code(s): G06F3/01, G01S7/41, G06T7/246, G06T7/521, G06T7/55, G06T7/174
Abstract: a method includes obtaining a target distance and target velocity for each radar frame within a sliding input data window. each radar frame within the data window includes extracted features. the method includes determining a dynamic threshold distance (d) for a range of distances wherein performance of a gesture is valid. the method includes determining whether the target distance corresponding to a current radar frame satisfies a proximity condition based on the d. the method includes in response to a determination the proximity condition is not satisfied, detecting a start of activity based on the extracted features. the method includes segmenting gesture frames from non-gesture frames in the data window, in response to at least one of: a determination the first proximity condition is satisfied, or a determination the current radar frame includes an end of the activity. the method includes discarding the non-gesture frames to modify the data window.
Inventor(s): Minhoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Dohyung HA of Suwon-si (KR) for samsung electronics co., ltd., Keemoon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/038, G06F3/0354
Abstract: an electronic device may include: a stylus pen including a first communication module and a control circuit configured to activate or inactivate the first communication module; and a pen housing which may include a second communication module and is configured to have at least a portion of the stylus pen arranged thereinside, wherein the control circuit may be configured to, in response to the at least a portion of the stylus pen being arranged inside the pen housing, inactivate the first communication module and activate the second communication module. various other embodiments may be provided.
20240028208.MEMORY-INTERFACE CONVERTER CHIP_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Young deok KIM of San Jose CA (US) for samsung electronics co., ltd., Pyeongwoo LEE of Sunnyvale CA (US) for samsung electronics co., ltd., Vipin Kumar AGRAWAL of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
Abstract: a storage device including a memory interface chip. in some embodiments, the storage device includes: a controller integrated circuit; a first memory die; and a first converter integrated circuit, the first converter integrated circuit having a first external interface and a second external interface, the first external interface being a serial interface, the first external interface being connected to the controller integrated circuit, and the second external interface being a memory interface connecting the first converter integrated circuit to the first memory die.
Inventor(s): Kyungho Lee of Suwon-si (KR) for samsung electronics co., ltd., Kiheung Kim of Suwon-si (KR) for samsung electronics co., ltd., Taeyoung Oh of Suwon-si (KR) for samsung electronics co., ltd., Jongcheol Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyongryol Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
Abstract: a semiconductor memory device includes a memory cell array including a plurality of memory cell rows and a row hammer management circuit. the row hammer management circuit stores counted values in count cells of each of the plurality of memory cell rows as count data, and performs an internal read-update-write operation to read the count data from the count cells of a target memory cell row from among the plurality of memory cell rows, to update the count data that was read to obtain updated count data, and to write the updated count data in the count cells of the target memory cell row. the row hammer management circuit includes a hammer address queue. the row hammer management circuit changes the updated count data randomly, based on an event signal indicating a state change of the hammer address queue.
Inventor(s): Jaehyuk LEE of Suwon-si (KR) for samsung electronics co., ltd., Seok Ju YUN of Suwon-si (KR) for samsung electronics co., ltd., Dong-Jin CHANG of Suwon-si (KR) for samsung electronics co., ltd., Sungmeen MYUNG of Suwon-si (KR) for samsung electronics co., ltd., Daekun YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F7/544, G11C11/412, G11C11/418, G11C11/419
Abstract: a memory device performs a multiplication operation using a multiplying cell including a memory cell and a switching element, in which the memory cell includes a pair of inverters connected to each other in opposite directions, a first transistor connected to one end of the pair of inverters, and a second transistor connected to the other end of the pair of inverters, and has a set weight; and the switching element is connected to an output end of the memory cell and configured to perform switching in response to an input value and output a signal corresponding to a multiplication result between the input value and the weight.
20240028332.MEMORY LOOKUP COMPUTING MECHANISMS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Peng Gu of Santa Barbara CA (US) for samsung electronics co., ltd., Krishna T. Malladi of San Jose CA (US) for samsung electronics co., ltd., Hongzhong Zheng of Los Gatos CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F9/30, G06F12/02, G06F17/16, G06F7/00, G06F7/487
Abstract: according to some example embodiments of the present disclosure, in a method for a memory lookup mechanism in a high-bandwidth memory system, the method includes: using a memory die to conduct a multiplication operation using a lookup table (lut) methodology by accessing a lut, which includes floating point operation results, stored on the memory die; sending, by the memory die, a result of the multiplication operation to a logic die including a processor and a buffer; and conducting, by the logic die, a matrix multiplication operation using computation units.
Inventor(s): Vignesh Saravanaperumal of San Jose CA (US) for samsung electronics co., ltd., Sanjay Annaso Patil of Milpitas CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F9/445, H04L9/40, H04L67/56
Abstract: a method includes obtaining, at a first electronic device, first and second proxy auto-configuration (pac) files. the method also includes executing, by the first electronic device, a first local proxy server configured to receive traffic forwarded by the first electronic device and at least one second electronic device. the first local proxy server is configured to forward the traffic based on the first pac file. the method further includes executing, by the first electronic device, a second local proxy server configured to forward the traffic from the second electronic device(s) to the first local proxy server based on a second pac file. the method also includes receiving, at the first local proxy server from the second local proxy server, the traffic from the second electronic device(s). in addition, the method includes forwarding, using the first local proxy server, the traffic from the second electronic device(s) to an external proxy server.
Inventor(s): ROSHAN R. NAIR of BENGALURU (IN) for samsung electronics co., ltd., ARUN GEORGE of BENGALURU (IN) for samsung electronics co., ltd., VISHAK GUDDEKOPPA of BENGALURU (IN) for samsung electronics co., ltd.
IPC Code(s): G06F9/50, G06K9/62
Abstract: a method for identifying a plurality of workloads in a heterogenous environment includes collecting a plurality of parameters from at least one layer of a system stack associated with the plurality of workloads, correlating the collected plurality of parameters from different layers of software stack, and creating a feature set based on the correlated plurality of parameters. the method further includes processing the feature set using a successively ordered classifier chain (socc) module to identify the presence of the plurality of workloads in the heterogenous environment in a data center.
Inventor(s): Jaehyeok LEE of Suwon-si (KR) for samsung electronics co., ltd., Taikuin MUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F9/54, H04M1/72409, H04M1/72463
Abstract: an electronic device includes a display, a communication circuit, a memory, and a processor. the processor identifies, based on executing a first application for controlling an external electronic device, a second application being ceased at least temporarily displaying of a notification message by the external electronic device. the processor identifies an event for transmitting a notification message generated by the second application to the external electronic device by bypassing the first application. the processor transmits information for being ceased at least temporarily displaying of a notification message related to the event, by the external electronic device, to external electronic device, based on identifying the event, in a state of displaying a user interface for interacting with a user in the display.
Inventor(s): Kyungkeun LEE of Suwon-si (KR) for samsung electronics co., ltd., Bumjun KIM of Suwon-si (KR) for samsung electronics co., ltd., Seunghan LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/30, G06F21/60
Abstract: disclosed is a method of operating an electronic device which includes a host device and a storage device. the host device includes a processor and a baseboard management controller (bmc), the storage device includes a storage controller and a micro controller unit (mcu), and the bmc and the mcu support out-of-band communication. the method of operating the electronic device includes providing, by the bmc, a first request including information about environment data to the mcu through the out-of-band communication, and providing, by the mcu, a first response corresponding to the first request to the bmc through the out-of-band communication.
Inventor(s): Jianyun QU of Shaanxi (CN) for samsung electronics co., ltd., Yinxiu GUO of Shaanxi (CN) for samsung electronics co., ltd., Hanbing ZHANG of Shaanxi (CN) for samsung electronics co., ltd., Mao ZHANG of Shaanx (CN) for samsung electronics co., ltd.
IPC Code(s): G06F11/36, G06F21/57
Abstract: a vulnerability detection method includes obtaining a target test program including system calls and first input parameters corresponding to the system calls required for normal running of a device driver, where the system calls are arranged based on a calling relationship for the normal running of the device driver, obtaining a sequence to be inserted, wherein the sequence to be inserted comprises at least one system call, mutating the target test program based on the sequence to be inserted and second input parameters corresponding to the sequence to be inserted, and detecting a vulnerability of the device driver based on running information about the device driver obtained during execution of the mutated target test program.
Inventor(s): Hyunjin KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/02, G06F12/10
Abstract: a storage system includes a plurality of storage devices. each of the plurality of storage devices includes a nonvolatile memory device, a buffer memory and a memory controller that controls the nonvolatile memory device and the buffer memory. at least one storage device of the plurality of storage devices is a computational storage device. the computational storage device further includes a storage controller that performs a computational operation for controlling the storage system.
Inventor(s): Zongwang Li of Dublin CA (US) for samsung electronics co., ltd., Sahand Salamat of San Diego CA (US) for samsung electronics co., ltd., Rekha Pitchumani of Oak Hill VA (US) for samsung electronics co., ltd.
IPC Code(s): G06F12/0817, G06F12/14
Abstract: provided is a method of data storage, the method including receiving, from an application, a request to access data stored on a storage device, identifying a data access pattern of the application, and storing the data in a cache of the storage device based on the data access pattern.
Inventor(s): Yang Seok KI of Palo Alto CA (US) for samsung electronics co., ltd., Sang Hun JUN of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F13/16, G06F12/02, G06F12/1018, G06F15/173
Abstract: a system is disclosed. the system may include a first device including a first processor, and a second device including a second processor, a memory, a first storage, and a second storage. the first storage may operate at a first speed, and the second storage may operate at a second speed that is slower than the first speed. the second device may be remote relative to the first device. the first device may load a metadata from a memory address in the memory of the second device. the first device may also access a data from the second device based at least in part on the metadata in the memory of the second device.
Inventor(s): Kyehwan Lee of Suwon-si (KR) for samsung electronics co., ltd., Youna Lee of Sueon-si (KR) for samsung electronics co., ltd., Sungjin Park of Suwon-si (KR) for samsung electronics co., ltd., Wooseok Jang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F21/60, G06F11/34, G06F11/30, G06F21/62
Abstract: provided is an electronic device for performing block consensus. the electronic device is configured to query at least one external electronic device configuring a decentralization network whether to participate in consensus, receive a consensus participation response to the query from at least one first external electronic device among the at least one external electronic device, identify a specified number of second external electronic devices among the at least one first external electronic device, based on the consensus participation response, and transmit a consensus request to the specified number of second external electronic devices.
Inventor(s): QHwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaeyoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeonkyun NOH of Suwon-si (KR) for samsung electronics co., ltd., Ami MA of Suwon-si (KR) for samsung electronics co., ltd., Sunghee LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyubaik CHANG of Suwon-si (KR) for samsung electronics co., ltd., Wooyoung CHEON of Suwon-si (KR) for samsung electronics co., ltd., Jaehoon JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F30/398
Abstract: a method for measuring a structure based on a spectrum, includes obtaining a first model that includes a first sub-model and a second sub-model following the first sub-model and is trained based on simulation data, generating a second model including a third sub-model identical to the first sub-model, training the second model based on sample spectrum data generated by measuring spectra of sample structures, and estimating, based on the trained second model, the structure from measured spectrum data generated by measuring a spectrum of the structure.
Inventor(s): Yongsuk Kwon of Suwon-si (KR) for samsung electronics co., ltd., Jungwook Choi of Seoul (KR) for samsung electronics co., ltd., Minsoo Kim of Seoul (KR) for samsung electronics co., ltd., Seongmin Park of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/08, G06N3/0495
Abstract: a method for quantization learning by a model quantizer that is operating in a computer system and compressing a transformer model. the method may include generating a student model through quantization of the transformer model, performing a first quantization learning by inserting a self-attention map of a teacher model into a self-attention map of the student model, and performing a second quantization learning using a knowledge distillation method so that the self-attention map of the student model follows the self-attention map of the teacher model.
[[20240028910.MODELING METHOD OF NEURAL NETWORK FOR SIMULATION IN SEMICONDUCTOR DESIGN PROCESS, SIMULATION METHOD IN SEMICONDUCTOR DESIGN PROCESS USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME, AND SEMICONDUCTOR DESIGN SYSTEM PERFORMING THE SAME_simplified_abstract_(samsung electronics co., ltd.)]]
Inventor(s): Yunjun Nam of Suwon-si (KR) for samsung electronics co., ltd., Bogyeong Kang of Suwon-si (KR) for samsung electronics co., ltd., Hyowon Moon of Suwon-si (KR) for samsung electronics co., ltd., Byungseon Choi of Suwon-si (KR) for samsung electronics co., ltd., Jaemyung Choe of Suwon-si (KR) for samsung electronics co., ltd., Hyunjae Jang of Suwon-si (KR) for samsung electronics co., ltd., In Huh of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/10, G06N3/08, G06F30/3308
Abstract: in a modeling method of a neural network, a first regression model is trained based on first sample data and first simulation result data. the first regression model is used to predict the first simulation result data from the first sample data. the first sample data represent at least one of conditions of a manufacturing process of a semiconductor device and characteristics of the semiconductor device. the first simulation result data are obtained by performing a simulation on the first sample data. in response to a consistency of the first regression model being lower than a target consistency, the first regression model is re-trained based on second sample data different from the first sample data. the second sample data are associated with a consistency reduction factor of the first regression model that is responsible for a prediction failure of the first regression model.
Inventor(s): Abdelrahman ABDELHAMED of North York (CA) for samsung electronics co., ltd., Michael Scott BROWN of Toronto (CA) for samsung electronics co., ltd., Abhijith PUNNAPPURATH of North york (CA) for samsung electronics co., ltd., Luxi ZHAO of Toronto (CA) for samsung electronics co., ltd.
IPC Code(s): G06T7/90
Abstract: a method for processing image data may include: obtaining a raw input image that is captured under an input illumination; obtaining a target illumination from a user input; obtaining an intermediate image having colors captured under a reference illumination, from the raw input image, based on a first color transform that maps the input illumination to the reference illumination in an illumination dataset of raw sensor images that are captured under a plurality of different illuminations; and obtaining an output image having colors captured under the target illumination, from the intermediate image, based on a second color transform that maps the reference illumination in the illumination dataset to the target illumination.
Inventor(s): Ian David Parker of Santa Barbara CA (US) for samsung electronics co., ltd., Brian R. Patton of San Francisco CA (US) for samsung electronics co., ltd., Pedro Martinez Lopez of Mountain View CA (US) for samsung electronics co., ltd., Sergio Perdices-Gonzalez of Sunnyvale CA (US) for samsung electronics co., ltd., Sajid Hassan Sadi of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06T15/04, G01J3/28
Abstract: in one embodiment, a method includes, by an electromagnetic device, emitting optical radiation on one or more objects disposed inside an interior of the electronic device, where the optical radiation is emitted by one or more radiation sources, capturing a set of 2d images of the one or more objects illuminated by the optical radiation, where variation of illumination or of an imaging process permits the set of 2d images to be combined into a representation of the one or more objects, determining whether the set of images comprises a representation of the one or more objects as imaged, in response to determining that the set of images comprises a representation of the one or more objects as imaged, generating a three-dimensional (3d) spectral data cube of the one or more first objects based on spectral information of the first set of images, and storing the 3d spectral data cube for processing by the electronic device.
Inventor(s): Michael Scott Brown of Toronto (CA) for samsung electronics co., ltd., Abhijith Punnappurath of North York (CA) for samsung electronics co., ltd., Abdelrahman Abdelhamed of Scarborough (CA) for samsung electronics co., ltd., Luxi Zhao of Toronto (CA) for samsung electronics co., ltd.
IPC Code(s): G06V20/00, G06V10/82
Abstract: an electronic device may be provided to identify fake pixels from an image that is processed via an image processor that uses artificial intelligence (ai) technology and/or an ai camera module to perform image authentication. the electronic device may be configured to: obtain an input image; obtain a processed image of the input image via ai-based model; generate authentication metadata that indicates fake pixels that have been generated by the ai-based model; store the authentication metadata in association with the processed image in the at least one memory; and output the processed image with an indication of the fake pixels.
Inventor(s): Jeongwan Park of Suwon-si (KR) for samsung electronics co., ltd., Jihoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Donghyuk Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V30/32, G06V30/22, G06V30/148, G06V30/19
Abstract: according to various embodiments, an electronic device may comprise a display, a memory for storing a machine learning algorithm related to character separation, and at least one processor, wherein the at least one processor is configured to receive a handwriting input via the display; extract feature information between a series of consecutive strokes corresponding to the handwriting input; merge or separate the strokes through the machine learning algorithm on the basis of the extracted feature information; and perform handwriting recognition on the basis of the result of the merging or separation. various other embodiments may be provided.
Inventor(s): Bongjae RHEE of Suwon-si (KR) for samsung electronics co., ltd., Suna KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V40/13, H10N30/05, H10N30/03, H10N30/071, H10N30/88, H10N30/30, G06F3/01
Abstract: an electronic apparatus according to an embodiment comprises: a housing; and a piezoelectric module including a first region that detects biometric information by using ultrasonic waves and a second region that provides haptic feedback, wherein the piezoelectric module includes: a first electrode layer and a second electrode layer facing each other; and a piezoelectric layer which is positioned between the first electrode layer and the second electrode layer, at least one portion of the piezoelectric layer positioned in the first region of the piezoelectric module may vibrate in a first frequency band to emit the ultrasonic waves, and at least one portion of the piezoelectric layer positioned in the second region of the piezoelectric module may vibrate in a second frequency band lower than the first frequency hand.
Inventor(s): Jeonghoo KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V40/60, G06V40/13, G06V40/12, G06V10/94
Abstract: an electronic device is provided. the electronic device includes a memory, a fingerprint sensor, a display module, and a processor operatively connected to the memory, the fingerprint sensor, and the display module. the processor may acquire a fingerprint image through the fingerprint sensor, if the first fingerprint recognition operation fails, acquire the first fingerprint image up to the release time of a touch for fingerprint recognition, if the touch is released, determine whether a second fingerprint image is acquired for a predetermined time, if the second fingerprint image is acquired for the predetermined time, determine whether the similarity between the first fingerprint image and the second fingerprint image is greater than or equal to a predetermined threshold, and if the similarity between the first fingerprint image and the second fingerprint image is greater than or equal to the predetermined threshold, recognize the fingerprint.
Inventor(s): Hyeongwook YANG of Suwon-si (KR) for samsung electronics co., ltd., Dasom LEE of Suwon-si (KR) for samsung electronics co., ltd., Yongha CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V40/60, G06V40/12, G06V40/13, G06V20/20
Abstract: an electronic device is provided. the electronic device includes a display, a communication module, a memory, and at least one processor configured to be operatively connected to the display, the communication module, and the memory. the at least one processor may be configured to detect an occurrence of an event for executing a remaining fingerprint theft prevention service. the at least one processor may be configured to receive remaining fingerprint candidate group data corresponding to a fingerprint candidate area. the at least one processor may be configured to determine authentication validity of the fingerprint candidate area. the at least one processor may be configured to transmit a security level obtained by evaluating a security risk of remaining fingerprints remaining on the display. the at least one processor may be configured to output security guidance information on the remaining fingerprints of the display.
Inventor(s): Sungjin LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/00, G09G3/3233, G09G3/20
Abstract: a display apparatus includes: a display panel including a first region and a second region; a controller to process source data and to generate an image signal; a timing controller to generate a driving signal for driving the display panel based on the image signal; and a cable connected to the display panel and to transmit the driving signal to the display panel. the controller transmits, to the timing controller, a pattern image signal for displaying a pattern image on the first and the second regions in a sequential manner; and determines a connection state of the cable based on (i) a first current value, which is output based on the pattern image displayed in the first region and (ii) a second current value, which is output based on the pattern image displayed in the second region.
Inventor(s): Changju LEE of Suwon-si (KR) for samsung electronics co., ltd., Sooyong KIM of Suwon-si (KR) for samsung electronics co., ltd., Taesung KIM of Suwon-si (KR) for samsung electronics co., ltd., Junho HUH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/20, G09G3/3233
Abstract: a display driving circuit for receiving image data from a host and driving a display panel, the display driving circuit including: an interface configured to receive the image data from the host; and a timing controller configured to control a first interrupt signal for waking up the host in a low-power mode and to control a second interrupt signal based on a light emission control signal, wherein the light emission control signal is for controlling a light emission time of a pixel included in the display panel, and wherein the timing controller is further configured to control a level of the second interrupt signal based on whether the image data has started to be received from the host in response to the first interrupt signal and the second interrupt signal.
Inventor(s): Dongheon SHIN of Suwon-si (KR) for samsung electronics co., ltd., Taejin PARK of Suwon-si (KR) for samsung electronics co., ltd., Donghwy KIM of Suwon-si (KR) for samsung electronics co., ltd., Jiyong KIM of Suwon-si (KR) for samsung electronics co., ltd., Heekeun PARK of Suwon-si (KR) for samsung electronics co., ltd., Minwoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Hoondo HEO of Suwon-si (KR) for samsung electronics co., ltd., Minho KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyojong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/34
Abstract: an electronic device configured to configure brightness of a display by using an illuminance sensor is provided. the electronic device includes acquiring a second front-surface sensing value smaller than a first front-surface sensing value through a first illuminance sensor while the brightness is a first brightness, comparing the second front-surface sensing value with a first rear-surface sensing value detected through a second illuminance sensor, determining, when the second front-surface sensing value is greater than the first rear-surface sensing value, whether a touch input is detected through a designated region of the display, maintaining the brightness at the first brightness when the touch input is detected, and when the touch input is not detected, adjusting the brightness of the display to a value lower than that of the first brightness, based on a first lut stored in a memory, or maintaining the brightness of the display at the first brightness.
Inventor(s): Nitin Jain of Noida (IN) for samsung electronics co., ltd., Ashutosh Gupta of Noida (IN) for samsung electronics co., ltd., Shreya Yadav of Noida (IN) for samsung electronics co., ltd.
IPC Code(s): G10L15/08
Abstract: provided is a system to provide natural utterance by a voice assistant and method thereof, wherein the system comprises an automatic speech recognition module for converting one or more unsegmented voice inputs into textual format in real-time. further, a natural language understanding module extracts the information and intent of the user from the converted textual inputs, wherein the natural language understanding module comprises a communication classification unit for classifying the user inputs into one or more pre-defined classes. further, the system comprises a processing module for analyzing and processing the inputs from the natural language understanding module and activity identification module, wherein the processing module provides real-time intuitive mingling responses based on the responses, contextual pauses and ongoing activity of the user.
Inventor(s): Sivakumar Balasubramanian of Sunnyvale CA (US) for samsung electronics co., ltd., Gowtham Srinivasan of San Jose CA (US) for samsung electronics co., ltd., Srinivasa Rao Ponakala of Sunnyvale CA (US) for samsung electronics co., ltd., Vijendra Raj Apsingekar of San Jose CA (US) for samsung electronics co., ltd., Anil Sunder Yadav of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G10L15/197, G10L15/06, G10L15/22
Abstract: a method comprises obtaining an audio input. the method also includes providing at least a portion of the audio input to a frame-level detector model. the method also includes obtaining a first output of the frame-level detector model including frame-level predictions associated with at least the portion of the audio input. the method also includes providing at least one chunked audio frame to a word-level verifier model. the method also includes obtaining a second output of the word-level verifier model including word-level probabilities associated with the at least one chunked audio frame. the method also includes instructing performance of automatic speech recognition on the audio input based on the word-level probabilities associated with the at least one chunked audio frame.
Inventor(s): Chanwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Yu-Sung Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C5/14
Abstract: a storage device which includes a non-volatile memory, a storage controller that is connected with the non-volatile memory and is configured to calculate a real-time power value of the storage device through at least one current value and at least one voltage value received from an adc module, and to generate a clock control signal based on the real-time power value. the adc module may be connected with at least one line that supplies a power to the storage device, and the adc module may measure the at least one current value and the at least one voltage value. the storage device may include a clock adjustment unit that adjusts a plurality of clock signals used to drive the storage controller based on the clock control signal and sends the plurality of clock signals to the storage controller.
Inventor(s): Younggil Go of Suwon-si (KR) for samsung electronics co., ltd., Hundae Choi of Suwon-si (KR) for samsung electronics co., ltd., Yoochang Sung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C7/10, G11C7/22, G11C7/08
Abstract: an offset calibration training method for adjusting a data receiver offset and a memory device therefor are provided. a method of performing a data receiver offset calibration includes storing a first parameter code, which is used to set a default data receiver offset calibration for the data receiver offset calibration, in a mode register, storing a second parameter code, which is used to set an optional data receiver offset calibration for the data receiver offset calibration, in the mode register, training the default data receiver offset calibration based on the first parameter code for the data receiver offset calibration, and training the optional data receiver offset calibration based on the second parameter code for the data receiver offset calibration.
Inventor(s): JONGPIL SON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/406, G11C11/4093
Abstract: a memory device is provided. the memory device includes: a first memory cell array including a first row and a second row; and a self-refresh circuit configured to control refresh in response to a first self-refresh entry signal, and stop refresh of the second row after refreshing the first row in response to a self-refresh exit signal.
Inventor(s): Dongil Lee of Suwon-si (KR) for samsung electronics co., ltd., Younghun Seo of Suwon-si (KR) for samsung electronics co., ltd., Sun Young Kim of Suwon-si (KR) for samsung electronics co., ltd., Hoseok Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4091, G11C11/4094
Abstract: a method of operating a bit line sense amplifier may include performing a normal precharge operation by charging a bit line, a complementary bit line, a sensing bit line, and a complementary sensing bit line to a precharge voltage, and then performing a first offset compensation operation by connecting the bit line to the sensing bit line, connecting the complementary bit line to the complementary sensing bit line, applying a first internal voltage greater than the precharge voltage to a p-type sense amplifier, and applying a second internal voltage less than the precharge voltage to an n-type sense amplifier. a second offset compensation operation is performed by applying the precharge voltage to the p-type sense amplifier concurrently with applying the second internal voltage to the n-type sense amplifier. a bit line offset detection operation is performed by separating the bit line from the sensing bit line, separating the complementary bit line from the complementary sensing bit line, connecting the sensing bit line to the complementary sensing bit line, and applying the precharge voltage to the n-type sense amplifier.
Inventor(s): Tae-Hong KWON of Suwon-si (KR) for samsung electronics co., ltd., Kiwhan Song of Suwon-si (KR) for samsung electronics co., ltd., Gyosoo Choo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/26, G11C16/20, G11C16/04
Abstract: various example embodiments provide a flash memory device, comprising a cell string having a plurality of memory cells; a page buffer connected to the cell string and a bit line and configured to sense data stored in a selected memory cell from among the plurality of memory cells by precharging a sensing node connected to the bit line; and a voltage regulator providing a source voltage to the page buffer. the page buffer comprises a latch including first and second inverters coupled between a latch node and an inverted latch node; and a pull-down nmos transistor for ping the sensing result of the selected memory cell to the latch node. the voltage regulator adjusts a trip voltage by providing the source voltage to the pull-down nmos transistor. the flash memory device according to the embodiment of the present invention may reduce a trip voltage variation range by using only the pull-down nmos transistor characteristics. also, according to the present invention, an off cell margin and an on cell margin may be sufficiently secured by adjusting the level of the trip voltage vtrip using the source voltage vs.
Inventor(s): Yujung Song of Suwon-si (KR) for samsung electronics co., ltd., Sungrae Kim of Suwon-si (KR) for samsung electronics co., ltd., Gilyoung Kang of Suwon-si (KR) for samsung electronics co., ltd., Hyeran Kim of Suwon-si (KR) for samsung electronics co., ltd., Chisung Oh of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C29/42, G11C29/46, G11C29/12
Abstract: a semiconductor memory device includes a memory cell array, an on-die error correction code (ecc) engine and a control logic circuit. the on-die ecc engine includes a first latch and a second latch. the control logic circuit sets the semiconductor memory device to a test mode in response to a first mode register set command. the on-die ecc engine, in the test mode, cuts off a connection with the memory cell array, receives a test data, stores the test data in the first latch, performs an ecc decoding on the test data stored in the first latch and a test parity data, stored in the second latch in response to a read command and provides an external device with a severity signal indicating whether the test data and the test parity data includes at least one error bit and the at least one error bit is correctable.
Inventor(s): Sehwan PARK of Yibgin-si (KR) for samsung electronics co., ltd., Jinyoung KIM of Seoul (KR) for samsung electronics co., ltd., Ilhan PARK of Suwon-si (KR) for samsung electronics co., ltd., Kyoman KANG of Gunpo-si (KR) for samsung electronics co., ltd., Sangwan NAM of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C29/50, G11C7/10, G11C8/18, G11C16/28, G11C29/44
Abstract: a non-volatile memory device includes a memory cell array including a plurality of memory blocks that includes a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a row decoder configured to select one among the plurality of memory blocks, based on an address, a voltage generator configured to apply word line voltages corresponding to selected word lines and unselected word lines, among the plurality of word lines, page buffers connected to the plurality of bit lines and configured to read data from a memory cell connected to one among the selected word lines of the selected one among the plurality of memory blocks, and a control logic configured to control the row decoder, the voltage generator, and the page buffers.
Inventor(s): Intak Jeon of Suwon-si (KR) for samsung electronics co., ltd., Hanjin Lim of Suwon-si (KR) for samsung electronics co., ltd., Hyungsuk Jung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/02, H01L21/3105
Abstract: in a method of a method of depositing a layer, a substrate is loaded on a substrate stage within a chamber. a precursor gas and a reaction gas are alternately supplied into the chamber to form at least one atomic layer. a surface of the at least one atomic layer is planarized by applying pressure on the surface of the at least one atomic layer to diffuse atoms located on the surface having a relatively high curvature. the precursor gas and the reaction gas are alternately supplied into the chamber to form at least one atomic layer on the planarized atomic layer.
Inventor(s): Seungmin Shin of Suwon-si (KR) for samsung electronics co., ltd., Joonyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Kijong Park of Suwon-si (KR) for samsung electronics co., ltd., Sunjoong Song of Suwon-si (KR) for samsung electronics co., ltd., Seungcheol Chae of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/311, H01L21/67, H01L21/687
Abstract: provided is an atomic layer etching (ale) method including operation (a) of loading a substrate having a first surface and a second surface facing each other onto a chuck, operation (b) of cooling the substrate to a first temperature through a cooling fluid, operation (c) of forming a modified layer on the substrate through a reaction between a first source gas and the first surface of the substrate by spraying the first source gas toward the substrate from a shower head positioned above the chuck, operation (d) of heating the substrate to a second temperature through a laser beam, and operation (e) of removing the modified layer of the substrate through a reaction between a second source gas and the modified layer of the substrate by spraying the second source gas from the shower head toward the first surface of the substrate.
Inventor(s): Byung Hoon KO of Suwon-si (KR) for samsung electronics co., ltd., Seung Woo Noh of Suwon-si (KR) for samsung electronics co., ltd., Sang Yun Park of Suwon-si (KR) for samsung electronics co., ltd., Jin Woo Choi of Suwon-si (KR) for samsung electronics co., ltd., Youn Ho Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/68, H01L21/67, H01L21/687, G01B11/14
Abstract: a wafer-type sensor for wafer alignment includes a dummy wafer; a sensor module disposed in the dummy wafer, and a processor configured to control the sensor module to measure a distance between a side surface of the dummy wafer and a ring formed around a periphery of an electrostatic chuck based on the dummy wafer being mounted on the electrostatic chuck by a transfer robot.
Inventor(s): Mingi HONG of Suwon-shi (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, H10B80/00, H01L21/56
Abstract: a method of manufacturing a semiconductor package includes disposing a buffer die on a support carrier; forming a plurality of memory dies, each of the plurality of memory dies having a body layer and an active layer on a surface of the body layer, wherein the body layer includes a light transmitting region; stacking the plurality of memory dies on the buffer die in a vertical direction to form a semiconductor device; measuring respective distances between the buffer die and the plurality of memory dies by irradiating light on the semiconductor device in the vertical direction; and forming a molding member encapsulating the semiconductor device.
Inventor(s): Minki Kim of Suwon-si (KR) for samsung electronics co., ltd., Seungduk Baek of Suwon-si (KR) for samsung electronics co., ltd., Hyuekjae Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, H01L23/00, H01L25/065
Abstract: a semiconductor device includes a base structure comprising a first bonding pad and a first test pad, and a semiconductor chip comprising a second bonding pad being in contact with the first bonding pad of the base structure and a second test pad being in contact with the first test pad of the base structure. a width of the second bonding pad of the semiconductor chip is less than a width of the second test pad of the semiconductor chip. an air gap is provided between the first test pad of the base structure and the second test pad of the semiconductor chip.
Inventor(s): SANGHYEON JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/16, H01L25/065, H01L25/00, H01L21/48, H01L23/13
Abstract: a package includes a lower substrate, a lower chip provided on the lower substrate, posts provided on an edge of the lower substrate and outside of the lower chip, an upper substrate provided on the posts and the lower chip, the upper substrate including a cavity formed on a bottom surface of the upper substrate, and a crack stiffener provided at an edge of the cavity, where the crack stiffener is configured to reduce formation of a crack in the upper substrate.
Inventor(s): Yikoan HONG of Suwon-si (KR) for samsung electronics co., ltd., Seokho KIM of Suwon-si (KR) for samsung electronics co., ltd., Kwangjin MOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/34, H01L25/065, H01L23/00
Abstract: a semiconductor package includes a semiconductor substrate and a semiconductor chip in contact with the semiconductor substrate. the semiconductor chip has a first surface facing the semiconductor substrate and an opposite second surface. the semiconductor chip has a die region, an edge region extending around the die region and a plurality of air exhaust passages extending from the die region to an outer surface of the edge region in the first surface of the semiconductor chip. each of the air exhaust passages includes an inlet having a first passage area, and an outlet having a second passage area greater than the first passage area.
20240030089.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Eunseok Cho of Asan-si (KR) for samsung electronics co., ltd., Minjeong Gu of Asan-si (KR) for samsung electronics co., ltd., Joonsung Kim of Suwon-si (KR) for samsung electronics co., ltd., Jaehoon Choi of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/367, H01L23/498, H01L23/552, H01L21/48, H01L21/56, H01L23/00, H01L25/18, H01L25/065, H01L23/31
Abstract: a method of manufacturing a semiconductor package is provided and includes: forming a lower redistribution structure, the lower redistribution structure including lower redistribution patterns having lower connection pads; forming an upper redistribution structure on a boundary surface of the lower redistribution structure, the upper redistribution structure including upper redistribution patterns having upper connection pads electrically connected to the lower connection pads; forming openings exposing at least a portion of each of the lower connection pads; disposing an interposer substrate, including the lower redistribution structure and the upper redistribution structure, on a base substrate, the lower connection pads of the interposer substrate electrically connected to wiring patterns of the base substrate through lower connection bumps disposed on the openings; and disposing at least one of semiconductor chips, including connection pads, on the interposer substrate, the connection pads electrically connected to the upper connection pads through upper connection bumps.
20240030103.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Taeyoung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L25/065
Abstract: a semiconductor package includes: a first semiconductor chip including a plurality of first through-electrodes and a plurality of first shared electrodes, wherein the first through-electrodes are arranged in a first direction, wherein the plurality of first shared.
20240030103.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Taeyoung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L25/065
Abstract: electrodes are spaced apart from the plurality of first through-electrodes in a second direction, intersecting the first direction, and are electrically connected to the plurality of first through-electrodes, respectively; and a second semiconductor chip including a plurality of second through-electrodes and a plurality of second shared electrodes, wherein the plurality of second through-electrodes are disposed on the first semiconductor chip and are arranged in the first direction, wherein the plurality of second shared electrodes are spaced apart from the plurality of second through-electrodes in the second direction and are electrically connected to the plurality of second through-electrodes, respectively.
20240030104.SEMICONDUCTOR PACKAGES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Chulyong Jang of Anyang-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L23/498, H01L23/538, H01L25/065, H01L23/31, H01L23/00
Abstract: a method of manufacturing a semiconductor package includes: forming through-vias extending from a front side of a semiconductor substrate into the substrate; forming, on the front side of the semiconductor substrate, a circuit structure including a wiring structure electrically connected to the through-vias; removing a portion of the semiconductor substrate so that at least a portion of each of the through-vias protrudes to a rear side of the semiconductor substrate; forming a passivation layer covering the protruding portion of each of the through-vias; forming trenches recessed along a periphery of a corresponding one of the through-vias; removing a portion of the passivation layer so that one end of each of the through-vias is exposed to the upper surface of the passivation layer; and forming backside pads including a dam structure in each of the trenches, the dam structure being spaced apart from the corresponding one of the through-vias.
Inventor(s): Myungsam KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/15, H01L25/065, H01L23/48
Abstract: a package substrate includes a ceramic substrate including a plurality of first insulating layers and a first circuit wiring layer disposed in the plurality of first insulating layers, a redistribution structure disposed on an upper surface of the ceramic substrate, and including a plurality of second insulating layers and a second circuit wiring layer disposed in the plurality of second insulating layers and electrically connected to the first circuit wiring layer, and a capacitor structure provided at an interface between the ceramic substrate and the redistribution structure, and including a lower electrode layer disposed at the same vertical level as at least a portion of the first circuit wiring layer, a dielectric layer disposed between the ceramic substrate and the redistribution structure, and an upper electrode layer disposed on an upper surface of the dielectric layer.
20240030119.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): DONGKYU KIM of Anyang-si (KR) for samsung electronics co., ltd., SEOKHYUN LEE of Hwaseong-si (KR) for samsung electronics co., ltd., KYOUNG LIM SUK of Suwon-si (KR) for samsung electronics co., ltd., JAEGWON JANG of Hwaseong-si (KR) for samsung electronics co., ltd., GWANGJAE JEON of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L25/065
Abstract: a semiconductor package may include a redistribution substrate, a connection terminal, and a semiconductor chip sequentially stacked. the redistribution substrate may include an insulating layer, a plurality of redistribution patterns, which are vertically stacked in the insulating layer, and each of which includes interconnection and via portions, and a bonding pad on the interconnection portion of the topmost redistribution pattern. the topmost redistribution pattern and the bonding pad may include different metallic materials. the bonding pad may have first and second surfaces opposite to each other. the first surface of the bonding pad may be in contact with a top surface of the interconnection portion of the topmost redistribution pattern. a portion of the second surface of the bonding pad may be in contact with the connection terminal. the insulating layer may be extended to be in contact with the remaining portion of the second surface.
20240030127.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Suhyun Bark of Suwon-si (KR) for samsung electronics co., ltd., Kyeongbeom Park of Hwaseong-si (KR) for samsung electronics co., ltd., Jongmin Baek of Seoul (KR) for samsung electronics co., ltd., Jangho Lee of Hwaseong-si (KR) for samsung electronics co., ltd., Wookyung You of Hwaseong-si (KR) for samsung electronics co., ltd., Deokyoung Jung of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/522, H01L23/528, H01L27/088
Abstract: a semiconductor device includes transistors on a substrate, a first interlayer insulating layer on the transistors, a lower interconnection line in an upper portion of the first interlayer insulating layer, an etch stop layer on the first interlayer insulating layer and the lower interconnection line, a second interlayer insulating layer on the etch stop layer, an upper interconnection line in the second interlayer insulating layer, the upper interconnection line including a via portion penetrating the etch stop layer to contact the lower interconnection line, and an etch stop pattern on the etch stop layer and in contact with a first sidewall of the via portion. the second interlayer insulating layer extends on the etch stop pattern and a top surface of the etch stop layer free of the etch stop pattern. a dielectric constant of the etch stop pattern is higher than a dielectric constant of the etch stop layer.
Inventor(s): Jaepil Lee of Suwon-si (KR) for samsung electronics co., ltd., Junbae Kim of Suwon-si (KR) for samsung electronics co., ltd., Jinkwan Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/522, H10B12/00
Abstract: a semiconductor device may include a substrate, an element layer including circuit elements arranged on the substrate, a wiring layer on the element layer, and a redistribution layer on the wiring layer. the redistribution layer may include a redistribution insulating layer and a redistribution conductive layer on the redistribution insulating layer. the redistribution conductive layer may include a connection pad and first and second inductor structures respectively including first and second inductor redistribution lines having a planar coil shape, and a connection pad. the first and second inductor redistribution lines respectively included in the first and second inductor structures may have different thicknesses.
Inventor(s): YONG KONG SIEW of SUWON-SI (KR) for samsung electronics co., ltd., WEI HSIUNG TSENG of SEONGNAM-SI (KR) for samsung electronics co., ltd., CHANGHWA KIM of HWASEONG-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/535, H01L23/485, H01L21/768, H01L29/06, H01L29/417, H01L29/66, H01L29/78
Abstract: a semiconductor device includes a substrate having an active region, a gate structure disposed on the active region, a source/drain region disposed in the active region at a side of the gate structure, a first interlayer insulating layer and a second interlayer insulating layer sequentially disposed on the gate structure and the source/drain region, a first contact plug connected to the source/drain region through the first interlayer insulating layer, a second contact plug connected to the gate structure through the first interlayer insulating layer and the second interlayer insulating layer, a first metal line disposed on the second interlayer insulating layer, and having a metal via disposed in the second interlayer insulating layer and connected to the first contact plug, and a second metal line disposed on the second interlayer insulating layer, and directly connected to the second contact plug.
20240030145.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Myungsam KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/538, H10B80/00, H01L23/00, H01L21/48
Abstract: a semiconductor package includes a connection substrate with a cavity, a first semiconductor chip and a second semiconductor chip on the connection substrate, a third semiconductor chip in the cavity of the connection substrate, the first semiconductor chip and the second semiconductor chip being on the third semiconductor chip and being connected to each other through the third semiconductor chip, and a molding layer that covers the first semiconductor chip, the second semiconductor chip, and the third semiconductor chip, wherein the third semiconductor chip includes first bumps that are exposed through the molding layer and are connected to the first semiconductor chip and the second semiconductor chip.
Inventor(s): Dongho KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Jihwang KIM of Cheonan-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/498, H01L23/31
Abstract: a semiconductor package including a semiconductor chip, a lower redistribution layer under the semiconductor chip, the lower redistribution layer including a lower insulating layer at a central region and at a portion of an edge region, and a trench at a remaining portion of the edge region, a plurality of outer connecting terminals under the lower redistribution layer, a molding layer including a first molding section and the second molding section, the first molding section being on the lower redistribution layer and surrounding a side surface of the semiconductor chip and the second molding section being in the trench and contacting a side surface of the lower insulating layer, and an upper redistribution layer on the molding layer may be provided. the side surface of the lower insulating layer and a side surface of the second molding section may be coplanar with each other.
Inventor(s): Aruldas DIVAKARAN of Bengaluru (IN) for samsung electronics co., ltd., Subramanian NARASIMHAMOORTHY of Bengaluru (IN) for samsung electronics co., ltd., Mallikarjungouda S PATIL of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): H01L23/60, H01L23/367, H01L23/48, H01L23/528
Abstract: a semiconductor device includes a substrate, a plurality of metal rails embedded in the substrate, and a power grid embedded in the substrate, at least one of the plurality of metal rails being part of the power grid and being directly connected to the substrate to control an electrostatic discharge (esd) in the semiconductor device.
Inventor(s): Woon Chun KIM of Suwon-si (KR) for samsung electronics co., ltd., Dae Seo PARK of Suwon-si (KR) for samsung electronics co., ltd., Jumyong PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00
Abstract: a semiconductor device includes a lower structure and an upper structure on the lower structure. the lower structure includes a first semiconductor substrate, a first pad and a first dielectric layer. the first dielectric layer surrounds the first pad and exposes a top surface of the first pad. the upper structure includes a second semiconductor substrate, a second pad and a second dielectric layer. the second dielectric layer surrounds the second pad and exposes a bottom surface of the second pad. the first pad and the second pad are bonded to each other across an interfacial layer to couple the upper and lower structures to each other. the first and second pads and the interfacial layer include a same metallic material. the first and second pads have a substantially same average grain size and the interfacial layer has a different average grain size than the first and second pads.
Inventor(s): Ji-Yong PARK of Suwon-si (KR) for samsung electronics co., ltd., Jeong Hyun Lee of Suwon-si (KR) for samsung electronics co., ltd., Choon Bin Yim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L21/56, H01L21/48, H01L23/31, H01L23/498, H01L23/13
Abstract: a method of fabricating a semiconductor package includes providing a semiconductor chip having solder balls formed on a bottom surface thereof, forming an adhesive layer on a top surface of the semiconductor chip, mounting the semiconductor chip on a first wafer using the solder balls, bonding a second wafer to the first wafer and to the adhesive layer of the semiconductor chip that is mounted on the first wafer, forming a molding layer between the first wafer and the second wafer, and cutting the first wafer, the molding layer and the second wafer.
20240030185.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): JU-YOUN CHOI of Suwon-si (KR) for samsung electronics co., ltd., Seunggeol RYU of Suwon-si (KR) for samsung electronics co., ltd., YUN SEOK CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/498, H01L23/31, H01L23/48, H01L23/538
Abstract: a semiconductor package comprising a main semiconductor chip having a first thickness, at least one semiconductor device on one side of the main semiconductor chip and having a second thickness less than the first thickness, a first molding layer that covers the main semiconductor chip and the semiconductor device so as to expose a top surface of the semiconductor device and to expose a top surface and a portion of a lateral surface of the main semiconductor chip, a first redistribution substrate below the first molding layer, a second redistribution substrate on the first molding layer, and a mold via that penetrates the first molding layer and connects the first redistribution substrate to the second redistribution substrate.
Inventor(s): Hyunsoo Chung of Suwon-si (KR) for samsung electronics co., ltd., Younglyong Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/48, H01L23/00
Abstract: a semiconductor package includes a first semiconductor chip including a first substrate, a plurality of first pads on the first substrate, and a plurality of through-electrodes extending through the first substrate and connected to the plurality of first pads, and a second semiconductor chip on the first semiconductor chip, the second semiconductor chip including a second substrate, and a plurality of second pads below the second substrate and in contact with the plurality of first pads. the plurality of first pads includes a first group of first pads each including a first base layer including a first recess, and a first conductive pattern layer and a first insulating pattern layer alternately disposed in the first recess, and a second group of first pads each including a second base layer including a second recess, and a second conductive pattern layer disposed in the second recess.
20240030210.DISPLAY APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Juyeon Jeong of Suwon-si (KR) for samsung electronics co., ltd., Mihyun Kim of Suwon-si (KR) for samsung electronics co., ltd., Sihan Kim of Suwon-si (KR) for samsung electronics co., ltd., Hankyu Seong of Suwon-si (KR) for samsung electronics co., ltd., Jusong Eom of Suwon-si (KR) for samsung electronics co., ltd., Jihye Yeon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/18, H01L27/15, H01L23/00
Abstract: a display apparatus includes: a circuit board including a driving circuit; and a pixel array disposed on the circuit board and including pixels, each of the pixels having a plurality of sub-pixels. the pixel array includes: a semiconductor stack, a conductive partition structure and wavelength conversion portions. the semiconductor stack includes led cells respectively constituting the plurality of sub-pixels. each of the led cells includes at least an active layer and a second conductivity-type semiconductor layer. the conductive partition structure is provided between sub-pixel spaces, respectively overlaps the led cells on the semiconductor stack, and is provided as a first electrode. the wavelength conversion portions are respectively disposed on the sub-pixel spaces.
20240030214.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sang Cheon PARK of Hwaseong-si (KR) for samsung electronics co., ltd., Dae-Woo Kim of Suwon-si (KR) for samsung electronics co., ltd., Taehun Kim of Asan-si (KR) for samsung electronics co., ltd., Hyuekjae Lee of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/18, H01L23/31, H01L23/48, H01L23/498
Abstract: a semiconductor package includes a redistribution substrate, a first memory chip provided on the redistribution substrate, the first memory chip comprising a first base layer, a first circuit layer provided on a top surface of the first base layer, and a first via penetrating the first base layer and connected to the first circuit layer and the redistribution substrate, a logic chip provided on the first memory chip, and a first molding layer surrounding the first memory chip. an outer side surface of the first molding layer is coplanar with a side surface of the logic chip. at an interface of the logic chip and the first memory chip, a first chip pad provided in the first circuit layer of the first memory chip and a second chip pad of the logic chip are formed of the same material and constitute one body.
Inventor(s): Youngmin Yun of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
Abstract: a semiconductor package includes a package substrate, an image sensor chip on the package substrate, a transparent substrate on the image sensor chip, and a dam structure on an edge of the image sensor chip and between the image sensor chip and the transparent substrate. the image sensor chip includes a semiconductor substrate including a pixel array region and a pad region around the pixel array region, the pixel array region including a light receiving region and a light blocking region between the light receiving region and the pad region, color filters on the light receiving region of the semiconductor substrate, a light blocking pattern on the light blocking region of the semiconductor substrate, micro lenses on the color filters, and a lens structure on the light blocking pattern and surrounding the light receiving region. the dam structure may be on at least a portion of the lens structure.
Inventor(s): Taeyoung Song of Suwon-si (KR) for samsung electronics co., ltd., Eun Sub Shim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
Abstract: a method of fabricating an image sensor includes providing a semiconductor substrate, forming a trench in the semiconductor substrate to define pixel regions, doping the trench with dopants of a first conductivity type, doping the trench with dopants of a second conductivity type after doping the trench with dopants of the first conductivity type, forming an insulating liner pattern in the trench after the doping of the trench, performing a first thermal treatment process on the semiconductor substrate after forming the insulating liner pattern, and forming a filling pattern filling an inner space of the trench after performing the first thermal treatment process. a diffusion coefficient of the dopants of the first conductivity type is greater than a diffusion coefficient of the dopants of the second conductivity type. the first thermal treatment process diffuses the dopants of the first and second conductivity types into the semiconductor substrate simultaneously.
Inventor(s): Kook Tae KIM of Suwon-si (KR) for samsung electronics co., ltd., Jingyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Byeongtaek BAE of Suwon-si (KR) for samsung electronics co., ltd., Seunghwi YOO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
Abstract: an image sensor comprises a substrate having first and second surfaces opposite to each other, a fixed charge layer in contact with the second surface, an interlayer dielectric layer covering the first surface, a device isolation part adjacent to the first surface in the substrate, and a pixel isolation part in the substrate. the pixel isolation part includes a conductive pattern, a buried dielectric pattern, and an isolation dielectric pattern that is simultaneously in contact with the fixed charge layer and the interlayer dielectric layer. the isolation dielectric layer has a first thickness at a level between the buried dielectric pattern and the conductive pattern. the isolation dielectric layer has a second thickness at a level of a bottom surface of the fixed charge layer. the second thickness is different from the first thickness.
Inventor(s): Jungmin PARK of Seoul (KR) for samsung electronics co., ltd., Haeryong KIM of Seongnam-si (KR) for samsung electronics co., ltd., Young-Geun PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: a semiconductor device includes a capacitor including a lower electrode an upper electrode, and a dielectric layer between the lower electrode and the upper electrode. the lower electrode includes abowhere ‘a’ is a first metal element and ‘b’ is a second metal element having a work function greater than that of the first metal element. the dielectric layer includes cdowhere ‘c’ is a third metal element and ‘d’ is a fourth metal element. the lower electrode includes a first layer and a second layer which are alternately and repeatedly stacked. the first layer includes the first metal element and oxygen. the second layer includes the second metal element and oxygen. the dielectric layer is in contact with the lower electrode at a first contact surface the first contact surface corresponding to the second layer.
Inventor(s): JUNGMIN PARK of Suwon-si (KR) for samsung electronics co., ltd., HANJIN LIM of Suwon-si (KR) for samsung electronics co., ltd., HYUNGSUK JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/02
Abstract: a semiconductor device comprising a substrate, lower electrodes vertically extended on the substrate and horizontally spaced apart from each other, a conductive pattern provided on the substrate to conformally cover the lower electrodes, supporting patterns provided to penetrate the conductive pattern and connected to portions of side surfaces of the lower electrodes, and conductive islands disposed on surfaces of the supporting patterns. the conductive islands may be distributed on the surfaces of the supporting patterns to be spaced apart from each other, and the conductive pattern may be spaced apart from and electrically disconnected from the conductive islands.
20240030283.INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jooho JUNG of Suwon-si (KR) for samsung electronics co., ltd., Junggil YANG of Suwon-si (KR) for samsung electronics co., ltd., Deokhwan KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L27/092, H01L29/66, H01L29/423, H01L29/775, H01L29/786
Abstract: an integrated circuit device includes: a fin-type active region protruding from a substrate and extending in a first lateral direction, wherein the fin-type active region includes a first sub-fin-type active region, a second sub-fin-type active region, and a third sub-fin-type active region that is disposed between the first sub-fin-type active region and the second sub-fin-type active region; a first gate line extending in a second lateral direction on the first sub-fin-type active region, wherein the second lateral direction intersects with the first lateral direction; a second gate line extending in the second lateral direction on the second sub-fin-type active region; a diffusion break structure passing through a portion of the third sub-fin-type active region in a vertical direction, wherein the diffusion break structure has a groove portion in an upper portion thereof; and a crack filler filling the groove portion.
20240030286.INTEGRATED CIRCUIT DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yoon Heo of Suwon-si (KR) for samsung electronics co., ltd., Seokhoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Jungtaek Kim of Suwon-si (KR) for samsung electronics co., ltd., Pankwi Park of Suwon-si (KR) for samsung electronics co., ltd., Moonseung Yang of Suwon-si (KR) for samsung electronics co., ltd., Sumin Yu of Suwon-si (KR) for samsung electronics co., ltd., Seojin Jeong of Suwon-si (KR) for samsung electronics co., ltd., Edward Namkyu Cho of Suwon-si (KR) for samsung electronics co., ltd., Ryong Ha of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/08, H01L27/092, H01L29/06, H01L29/423, H01L29/775, H01L21/02, H01L29/66
Abstract: an integrated circuit device includes a plurality of fin-type active areas extending in a first horizontal direction on a substrate, a plurality of channel regions respectively on the plurality of fin-type active areas, a plurality of gate lines surrounding the plurality of channel regions on the plurality of fin-type active areas and extending in a second horizontal direction that crosses the first horizontal direction, and a plurality of source/drain regions respectively at positions adjacent to the plurality of gate lines on the plurality of fin-type active areas and respectively in contact with the plurality of channel regions, and the plurality of source/drain regions respectively include a plurality of semiconductor layers and at least one air gap located therein.
20240030287.SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Choeun LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyungho KIM of Suwon-si (KR) for samsung electronics co., ltd., Kanghun MOON of Suwon-si (KR) for samsung electronics co., ltd., Kihwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Yonguk JEON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/08, H01L29/06, H01L29/161, H01L29/423, H01L29/417, H01L29/775, H01L21/02, H01L29/66
Abstract: a semiconductor device includes a plurality of channel layers on an active region on a substrate, a gate structure surrounding each of the plurality of channel layers, and a source/drain region contacting the plurality of channel layers. the source/drain region comprises a first epitaxial layer including first layers, disposed on side surfaces of the plurality of channel layers, and a second layer, disposed at a lower end of the source/drain region on the active region, and having first impurities, a second epitaxial layer on the active region, filling a space between the first layers and the second layer, having second impurities, different from the first impurities, and having a recessed upper surface, and a third epitaxial layer on the second epitaxial layer. at least a portion of the third epitaxial layer may not include the first impurities and the second impurities.
Inventor(s): SUNGMIN KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/10, H01L27/092, H01L21/74, H01L21/8238
Abstract: disclosed are semiconductor devices and their fabrication methods. the semiconductor device comprises a substrate provided with an active pattern, a gate electrode that runs across the active pattern and extends in a first direction, source/drain patterns on the active pattern on opposite sides of the gate electrode, a channel pattern formed of a portion of the active pattern between the source/drain patterns, and a buried layer below the source/drain patterns and the channel pattern. the buried layer includes first segments below the source/drain patterns and a second segment below the channel pattern. the first segments have a first level. the second segment has a second level. the first level is lower than the second level.
Inventor(s): Minsu SEOL of Suwon-si (KR) for samsung electronics co., ltd., Junyoung KWON of Suwon-si (KR) for samsung electronics co., ltd., Jitak NAM of Suwon-si (KR) for samsung electronics co., ltd., Minseok Yoo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/18, H01L29/16, H01L29/417, H01L21/02
Abstract: a semiconductor device may include at least one first two-dimensional material layer; a source electrode and a drain electrode that are respectively on both sides of the at least one first two-dimensional material layer; second two-dimensional material layers respectively on a side of the source electrode and a side of the drain electrode and connected to the at least one first two-dimensional material layer; a gate insulating layer surrounding the at least one first two-dimensional material layer; and a gate electrode on the gate insulating layer.
Inventor(s): Munhyeon KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Myung Gil KANG of Suwon-si (KR) for samsung electronics co., ltd., Wandon KIM of Seongnam-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/423, H01L29/06, H01L29/49, H01L29/786
Abstract: disclosed are a semiconductor device and a method of fabricating the same. the device may include a substrate, an active pattern in an upper portion of the substrate and is extending in a first direction, a gate electrode crossing the active pattern and extending in a second direction intersecting the first direction, a first gate spacer covering a side surface of the gate electrode, a first inhibition layer between the gate electrode and the first gate spacer, and a gate insulating layer between the gate electrode and the active pattern. the gate insulating layer may include a high-k dielectric layer and a gate oxide layer. the gate oxide layer may be between the high-k dielectric layer and the active pattern. the high-k dielectric layer may be between the gate oxide layer and the gate electrode.
20240030305.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jaehyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Jonghan LEE of Suwon-si (KR) for samsung electronics co., ltd., Jonghoon BAEK of Suwon-si (KR) for samsung electronics co., ltd., Taegon KIM of Suwon-si (KR) for samsung electronics co., ltd., Yujin JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/423, H01L29/06, H01L29/775, H01L29/786
Abstract: the present disclosure provides for semiconductor devices including field effect transistors. in some embodiments, the semiconductor device includes active structures extending in a first direction on a substrate, an isolation pattern formed in a trench between the active structures, gate structures extending in a second direction across the active structures, a cutting insulation pattern formed between end portions of the gate structures in the second direction, and a lower impurity region at an upper portion of the isolation pattern. a first shape of a lower portion of the cutting insulation pattern disposed under an uppermost surface of the isolation pattern is different from a second shape of a lower portion of the gate structures disposed under the uppermost surface of the isolation pattern. the gate structures are formed on the active structures and the isolation pattern. the lower impurity region contacts at least a portion of the cutting insulation pattern.
Inventor(s): Seungmin SONG of Suwon-si (KR) for samsung electronics co., ltd., Bongsoo Kim of Suwon-si (KR) for samsung electronics co., ltd., Soojin Jeong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/66, H01L29/40, H01L21/311, H01L21/3115, H01L29/08, H01L21/02, H01L29/423
Abstract: a semiconductor device includes a substrate including an active pattern, a pair of channel patterns spaced apart from each other in a first direction on the active pattern, each of the pair of channel patterns including vertically stacked semiconductor patterns, a source/drain pattern between the pair of channel patterns, a pair of gate electrodes on the channel patterns, an active contact between the pair of gate electrodes, and outer spacers on side surfaces of the pair of gate electrodes. a distance between the outer spacers spaced apart from each other with the active contact therebetween is smaller than a width of the source/drain pattern in the first direction at a first level at which an upper surface of an uppermost semiconductor pattern among the semiconductor patterns is positioned.
Inventor(s): Sora YOU of Suwon-si (KR) for samsung electronics co., ltd., Kyoungwoo Lee of Suwon-si (KR) for samsung electronics co., ltd., Sungmoon Lee of Suwon-si (KR) for samsung electronics co., ltd., Seungmin Cha of Suwon-si (KR) for samsung electronics co., ltd., Hagju Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/775, H01L27/088, H01L29/423, H01L29/06
Abstract: a semiconductor device includes parallel active regions on a substrate and extending in a first horizontal direction; gate structures intersecting the active regions, extending in a second horizontal direction, and including first and second gate structures opposing each other in the second horizontal direction; source/drain regions including first and second source/drain regions, on at least one side of the gate structures and on the active regions; a gate separation pattern between the first and second gate structures; a vertical conductive structure in the gate separation pattern; contact plugs including a first contact plug electrically connected to the first source/drain region and the vertical conductive structure, and a second contact plug electrically connected to the second source/drain region and spaced apart from the vertical conductive structure; and a contact separation pattern separating the first and second contact plugs, having a portion contacting an upper surface of the vertical conductive structure.
20240030342.SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sanghoon Uhm of Suwon-si (KR) for samsung electronics co., ltd., Minhee Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/78, H01L29/788, H01L29/792, H01L21/768, H01L29/786
Abstract: a semiconductor device includes bit lines, gate electrodes, a gate insulation pattern and a channel structure on a substrate. each of the bit lines extends in a first direction, and the bit lines may be spaced apart from each other in a second direction. the gate electrodes are spaced apart from each other in the first direction, and each of the gate electrodes extends in the second direction.
20240030342.SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sanghoon Uhm of Suwon-si (KR) for samsung electronics co., ltd., Minhee Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/78, H01L29/788, H01L29/792, H01L21/768, H01L29/786
Abstract: for each of the gate electrodes, a gate insulation pattern is formed on a sidewall in the first direction of the gate electrode, and a channel structure is formed on a sidewall in the first direction of the gate insulation pattern. the channel structure includes a first amorphous channel including an amorphous oxide semiconductor and a first crystalline channel including a crystalline oxide semiconductor and contacting an upper surface of the first amorphous channel.
Inventor(s): Doohyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Heonjong Shin of Suwon-si (KR) for samsung electronics co., ltd., Seon-Bae Kim of Suwon-si (KR) for samsung electronics co., ltd., Jaeran Jang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/78, H01L29/66, H01L29/08
Abstract: in some embodiments, the semiconductor device includes a substrate comprising a cell region, a dummy region spaced apart from the cell region in a first direction, and a border region between the cell region and the dummy region, an active pattern on the cell region, a device isolation layer on the substrate, source/drain patterns on the active pattern and channel patterns between the source/drain patterns, cell gate electrodes crossing the channel patterns in a second direction, active contacts disposed on the cell region and between the cell gate electrodes and coupled to the source/drain patterns, dummy gate electrodes on the dummy region and on the device isolation layer, dummy contacts on the dummy region and on a side surface of each of the dummy gate electrodes, an interlayer insulating layer on the side surface of each of the dummy gate electrodes, and a dam structure on the border region.
20240030355.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seungmin SONG of Hwaseong-si (KR) for samsung electronics co., ltd., Taeyong KWON of Suwon-si (KR) for samsung electronics co., ltd., Jaehyeoung MA of Seongnam-si (KR) for samsung electronics co., ltd., Namhyun LEE of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/786, H01L27/092, H01L29/06, H01L29/417, H01L29/423, H01L29/66, H01L21/8238, H01L21/02
Abstract: a semiconductor device including a substrate including a division region extending in a first direction, first and second active patterns on the substrate with the division region interposed therebetween, the first and the second active patterns being spaced apart from each other in a second direction perpendicular to the first direction, gate electrodes extending in the first direction and crossing the first and second active patterns, a first channel pattern on the first active pattern, and a second channel pattern on the second active pattern may be provided. the smallest width of the first active pattern may be smaller than the smallest width of the second active pattern, in the first direction. an end portion of the first channel pattern adjacent to the division region may include a protruding portion extending in the first direction, and the protruding portion may have a triangle shape in a plan view.
Inventor(s): Kwangjin Park of Seongnam-si (KR) for samsung electronics co., ltd., Dongsu Ko of Seoul (KR) for samsung electronics co., ltd., Kyoungmin Min of Suwon-si (KR) for samsung electronics co., ltd., Changhoon Jung of Seoul (KR) for samsung electronics co., ltd., Byungjin Choi of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H01M4/525, H01M10/052, H01M4/505, H01M4/1391, H01M4/36, H01M4/04, H01M4/485
Abstract: a composite cathode active material and a cathode and a lithium battery including the composite cathode active material. the composite cathode active material has a core including a plurality of primary particles including a nickel-containing first lithium transition metal oxide having a layered crystal structure; a grain boundary disposed between adjacent primary particles of the plurality of primary particles; and a shell on the core, the shell including a second lithium transition metal oxide having a spinel crystal structure, wherein the grain boundary includes a first composition having a spinel crystal structure.
Inventor(s): Inhyuk SON of Yongin-si (KR) for samsung electronics co., ltd., Mijong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jumyeung LEE of Suwon-si (KR) for samsung electronics co., ltd., Minwoo LIM of Hwaseong-si (KR) for samsung electronics co., ltd., Junghyun CHOI of Yongin-si (KR) for samsung electronics co., ltd., Sungsoo HAN of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01M4/62, H01M4/38, H01M4/36, H01M4/583, H01M10/0565, H01M4/1393, H01M4/1395, H01M10/0525, H01M4/134, H01M4/02, H01M4/04
Abstract: a porous silicon composite includes: a porous core including a porous silicon composite secondary particle; and a shell disposed on a surface of the porous core and surrounding the porous core, wherein the porous silicon composite secondary particle includes an aggregate of silicon composite primary particles, each including silicon, a silicon suboxide on a surface of the silicon, and a first graphene on a surface of the silicon suboxide, wherein the shell include a second graphene, and at least one of the first graphene and the second graphene includes at least one element selected from nitrogen, phosphorus, and sulfur.
Inventor(s): Eunseok HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q1/24, H01Q1/38, H01Q9/04
Abstract: disclosed is an electronic device including a housing, a support member, a printed circuit board, an antenna, and a processor. the antenna structure comprises: a first conductive patch disposed on a first layer and electrically connected to the first transmission line; a second conductive patch disposed to be spaced apart from the first conductive patch in the first layer and electrically connected to the second transmission line; a third conductive patch disposed spaced apart from the first conductive patch and the second conductive patch in the first layer and electrically connected to the third transmission line; and a shielding member disposed on the second layer, and the processor may be set to receive a wireless signal of a designated band by supplying power to the first conductive patch, the second conductive patch, and the third conductive patch by using a wireless communication circuit.
Inventor(s): Myeongsu OH of Suwon-si (KR) for samsung electronics co., ltd., Yongyoun KIM of Suwon-si (KR) for samsung electronics co., ltd., Duho CHU of Suwon-si (KR) for samsung electronics co., ltd., Youngjune HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q1/24, H05K7/14, H05K1/02, H01Q1/48, H04M1/02
Abstract: an electronic apparatus includes: a housing including a coupling region; and a printed circuit board (pcb) including: an overlap region that overlaps the coupling region; a non-overlap region that does not overlap the coupling region; a plurality of metal layers including a plurality of lines; and a void portion in which a portion of at least one metal layer, among the plurality of metal layers, is not formed so that the at least one metal layer is discontinuous or terminated in the void portion, the at least one metal layer including a metal layer that is closest to the coupling region among the plurality of metal layers.
20240030648.RECEPTACLE CONNECTOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Waneui JUNG of Suwon-si (KR) for samsung electronics co., ltd., Hanseok MUN of Suwon-si (KR) for samsung electronics co., ltd., Jaeryong HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01R13/52
Abstract: a receptacle connector includes a shell including a shell body and a shell stopper connected to the shell body; a terminal provided inside the shell body; a core body including a core base supporting the terminal and a parting part protruding from the core base; and a main body including: a center part including a main protrusion configured to move in a first direction in the shell and to be caught by the shell stopper; an exposed part protruding from the center part in the first direction and covering at least a portion of the terminal; and a non-exposed part protruding from the center part in a second direction opposite to the first direction, wherein the parting part is bonded to the center part or the non-exposed part.
Inventor(s): Tae Won SONG of Suwon-si (KR) for samsung electronics co., ltd., Jinho KIM of Suwon-si (KR) for samsung electronics co., ltd., Ju Wan LIM of Suwon-si (KR) for samsung electronics co., ltd., Duk Jin OH of Suwon-si (KR) for samsung electronics co., ltd., Terrance Christopher HUANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02J7/00, G01R31/392, G01R31/396, G01R31/367
Abstract: a processor-implemented method with battery cell charging includes: for each degradation parameter set comprising one or more degradation parameters related to degradation, communicating with a server configured to generate and store a look-up table (lut) comprising charge data for each index combination of the one or more degradation parameters comprised in the degradation parameter set; determining a current value of the one or more of the degradation parameters corresponding to a target battery cell of an electronic device and transmitting the current value to the server; receiving an lut corresponding to the current value of the one or more degradation parameters from the server; and charging the target battery cell based on a charging profile that is generated by charge data of the received lut.
Inventor(s): Hyunku PARK of Suwon-si (KR) for samsung electronics co., ltd., Jungoh SUNG of Suwon-si (KR) for samsung electronics co., ltd., Juhyang LEE of Suwon-si (KR) for samsung electronics co., ltd., Jeonggyu JO of Suwon-si (KR) for samsung electronics co., ltd., Hyunju HONG of Suwon-si (KR) for samsung electronics co., ltd., Woogeun KWAK of Suwon-si (KR) for samsung electronics co., ltd., Jungsik PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02J7/00
Abstract: an electronic device includes: a wireless charging circuit; at least one sensor; and at least one processor operatively connected to the wireless charging circuit and the at least one sensor. the at least one processor is configured to: perform charging using the wireless charging circuit; sense a temperature of the electronic device via the at least one sensor; control, based on the temperature of the electronic device, heat generation during the charging; and change a charging condition based on a charging duration time determined based on the heat controlled by the at least one processor.
Inventor(s): Sungmin YOO of Seoul (KR) for samsung electronics co., ltd., Taehwang KONG of Suwon-si (KR) for samsung electronics co., ltd., Sangho KIM of Suwon-si (KR) for samsung electronics co., ltd., Junhyeok YANG of Seoul (KR) for samsung electronics co., ltd., Hyungmin LEE of Seoul (KR) for samsung electronics co., ltd., Yunho LEE of Seoul (KR) for samsung electronics co., ltd., Woojoong JUNG of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H02M3/158, H02M3/157, H02M1/08
Abstract: a direct-current (dc)-dc converter includes a converting circuit including an inductor element. the converting circuit is configured to generate an output voltage from an input voltage based on a switching operation. an inductor current emulator is configured to adjust at least one parameter for changing a current peak value of the inductor element in response to a change in a level of the input voltage and is configured to generate an internal voltage based on the at least one parameter, which is adjusted. the inductor current emulator is configured to generate a control signal for controlling the switching operation such that current of the inductor element has a pattern corresponding to a pattern of the internal voltage.
Inventor(s): Changkyu SEOL of OSAN-SI (KR) for samsung electronics co., ltd., Jiyoup KIM of HWASEONG-SI (KR) for samsung electronics co., ltd., Hyejeong SO of SEOUL (KR) for samsung electronics co., ltd., Myoungbo KWAK of SEOUL (KR) for samsung electronics co., ltd., Pilsang YOON of HWASEONG-SI (KR) for samsung electronics co., ltd., Sucheol LEE of HWASEONG-SI (KR) for samsung electronics co., ltd., Youngdon CHOI of SEOUL (KR) for samsung electronics co., ltd., Junghwan CHOI of HWASEONG-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H03M7/14
Abstract: encoding and decoding apparatuses and methods for implementing multi-mode coding are provided. the apparatus includes a transmitter and a receiver connected to a data bus. when data bursts are converted by the transmitter into codewords each including a plurality of symbols and/or a codeword received by the receiver is recovered as data bursts, maximum transition avoidance (mta) codeword mappings in which no maximum transition (mt) event occurs between the plurality of symbols and minimum dc current (mdc) codeword mappings related to minimum power consumption of the plurality of symbols are used.
Inventor(s): Harksoo KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B1/403, H04B1/00, H04B1/48
Abstract: an electronic device according to an embodiment of the present disclosure may comprise: a processor; a memory electrically connected to the processor; a power management integrated circuit (pmic) electrically connected to the processor; a radio frequency integrated circuit (rfic) electrically connected to the processor; a power supply module including a power supply electrically connected to the pmic and the processor; a front-end module including circuitry\electrically connected to the pmic, the rfic, and the power supply module, and is configured to modulate and amplify an rf signal received from the rfic; a variable notch filter electrically connected to the power supply module and the front-end module, and connected to a transmission signal amplifier of the front-end module and configured to remove a harmonic frequency; and an antenna electrically connected to the front-end module, wherein the processor is configured to: control the pmic and the power supply module to supply power to the front-end module; control a wireless communication operation to be performed using multiple frequency bands; and based on performing the wireless communication operation using the multiple frequency bands, control impedance of the variable notch filter to adjust a frequency removal band of the variable notch filter based on a parameter pre-stored in the memory.
Inventor(s): Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd.
IPC Code(s): H04B7/0417, H04B7/06, H04L5/00, H04W72/0453, H04W80/08, H04W72/21
Abstract: a method for operating a user equipment (ue) for channel state information (csi) feedback in a wireless communication system is provided. the method comprises receiving, from a base station (bs), csi reference signals (csi-rss) and csi feedback configuration information, estimating a channel based on the received csi-rss, determining, based on the estimated channel and the csi feedback configuration information, a number of non-zero coefficients (k) for each layer (l) of a total number of � layers, wherein �≥1 is a rank value, and a sum of the kacross each of the � layers as a total number of non-zero coefficients (k), where k=�k. the method further comprises transmitting, to the bs, the csi feedback including the kvalue over an uplink (ul) channel.
Inventor(s): Eunsung Jeon of Suwon-si (KR) for samsung electronics co., ltd., Chulho Chung of Suwon-si (KR) for samsung electronics co., ltd., Jinmin Kim of Suwon-si (KR) for samsung electronics co., ltd., Ravi Hiranand Gidvani of Suwon-si (KR) for samsung electronics co., ltd., Myeongjin Kim of Suwon-si (KR) for samsung electronics co., ltd., Jonghun Han of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B7/06, H04L5/00, H04B7/0456
Abstract: an operating method of a first device communicating with a second device in a wireless local area network (wlan), includes: receiving, from the second device, a physical layer protocol data unit (ppdu) including a payload that includes a trigger frame; preparing an uplink beamforming matrix based on a value of an uplink beamforming-related first sub-field included in a preamble of the ppdu; beamforming, according to the uplink beamforming matrix, the ppdu; and transmitting the beamformed ppdu to the second device based on a value of an uplink beamforming-related second sub-field included in the trigger frame.
Inventor(s): Wonjun KIM of Suwon-si (KR) for samsung electronics co., ltd., Suhwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Seunghyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyeondeok JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B7/06
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transfer rate than a 4g communication system such as lte. according to an embodiment, a method performed by a terminal in a wireless communication system may include transmitting, to a base station, training capability information of the terminal relating to artificial intelligence (ai) model training of an autoencoder configured to compress and reconstruct feedback information for a channel state information-reference signal (csi-rs), receiving, from the base station, information on a training completion time point and decoder information determined based on the training capability information, generating a training dataset for the autoencoder, based on at least one received csi-rs, training the autoencoder, based on the decoder information, the information on the training completion time point, and the generated training dataset, and transmitting training result information of the autoencoder to the base station.
Inventor(s): Sangyeob JUNG of Suwon-si (KR) for samsung electronics co., ltd., Himke VAN DER VELDE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B17/15, H04W76/27, H04B17/00
Abstract: the present disclosure relates to a method performed by a user equipment (ue) in a wireless communication system. the method may include receiving, from a base station (bs), configuration information associated with a logged minimization of driving test (mdt), and performing measurement logging in a plurality of logging intervals, based on the configuration information when the ue transitions to an idle state or an inactive state. the performing of the measurement logging may include, when reporttype is set to eventtriggered, detecting whether an in-device coexistence (idc) problem has occurred in a last logging interval from among the plurality of logging intervals while the measurement logging is performed, and when it is detected that the idc problem has occurred, logging a flag indicating the occurrence of the idc problem.
Inventor(s): Youngjoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Kwonjong LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyojin LEE of Suwon-si (KR) for samsung electronics co., ltd., Juho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B17/345, H04L5/14
Abstract: the present disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate than a 4g communication system such as lte. the present disclosure provides a method for measuring self-interference by a first node and an apparatus for performing same, the method comprising the steps of: acquiring self-interference channel measurement configuration; transmitting a measurement signal for self-interference measurement on the basis of the self-interference channel measurement configuration; and on the basis of the self-interference channel measurement configuration, measuring the self-interference that occurs, by means of the measurement signal for the self-interference channel measurement.
Inventor(s): Vinay Kumar SHIRIVASTAVA of Bangalore (IN) for samsung electronics co., ltd., Fasil Abdul LATHEEF of Bangalore (CA) for samsung electronics co., ltd., Sangkyu BAEK of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04L1/1607, H04L1/1829, H04W36/00
Abstract: the present disclosure relates to a 5g communication system or a 6g communication system for supporting higher data rates beyond a 4g communication system such as long term evolution (lte). embodiments herein disclose methods for handling lossless operations for a mbs in a wireless communication network (). the method includes receiving, by a network entity (), a pdcp status report from a ue (). the pdcp status report includes missing pdu. the missing pdu is detected during at least one of a mbs bearer type change, a mbs data transfer and a handover procedure involving a mbs bearer. further, the method includes determining, by the network entity (), a pdcp pdu for retransmission of the missing pdu. further, the method includes retransmitting, by the network entity (), the determined pdcp pdu to the ue () over a ptp path. the method can be used to is enable reliability with efficient retransmission during a ptm-ptp switching, a handover and a normal operation for a nr mbs. based on the proposed method, a ue mbs service reception performance is enhanced.
Inventor(s): Satya Kumar VANKAYALA of Bangalore (IN) for samsung electronics co., ltd., Abhay Kumar SAH of Bangalore (IN) for samsung electronics co., ltd., Anshuman NIGAM of Bangalore (IN) for samsung electronics co., ltd., Satya Venkata Uma Kishore GODAVARTI of Bangalore (IN) for samsung electronics co., ltd., Tirthankar MITTRA of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04L1/1812
Abstract: the present disclosure relates to a pre-5-generation (5g) or 5g communication system to be provided for supporting higher data rates beyond 4-generation (4g) communication system such as long term evolution (lte).
Inventor(s): Satya Kumar VANKAYALA of Bangalore (IN) for samsung electronics co., ltd., Abhay Kumar SAH of Bangalore (IN) for samsung electronics co., ltd., Anshuman NIGAM of Bangalore (IN) for samsung electronics co., ltd., Satya Venkata Uma Kishore GODAVARTI of Bangalore (IN) for samsung electronics co., ltd., Tirthankar MITTRA of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04L1/1812
Abstract: embodiments of present disclosure relates to apparatus and method for enabling optimized decoding of data packet in harq based communication in wireless communication network. initially, unsuccessful decoding of instant data packet received from transmitting unit is identified. if number of previous data packets, received preceding the instant data packet, is greater than one, subsequent decoding is enabled in the receiving unit for the instant data packet. the subsequent decoding includes generating sequentially, modified versions of data packets, for decoding. the modified versions comprises all possible weighted combinations of the data packets with at least one of the instant data packet and one or more of the previous data packets. each of the modified versions is decoded individually and a subsequent modified version from the modified versions is generated when unsuccessful decoding is identified for previously generated modified version from the modified versions.
Inventor(s): Emad N. Farag of Flanders NJ (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd., Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd., Dalin Zhu of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04L5/00
Abstract: systems and methods for joint and separate beam indication in a wireless communication system. a method of operating a user equipment (ue) includes receiving configuration information for a first set of transmission configuration indicator (tci) states for joint tci states or downlink (dl) tci states and for a second set of tci states for uplink (ul) tci states if configured to operate with separate beam indication; receiving m tci state code points; and if m>1, receiving downlink control information (dci) that indicates at least one tci state code point from the m tci state code points. the method further includes determining a tci state to apply to at least one of dl channels and ul channels; updating one or more spatial filters based on the determined tci state; and at least one of receiving and transmitting the dl channels and the ul channels, respectively, based on the updated spatial filters.
Inventor(s): Sungtaek KIM of Suwon-si (KR) for samsung electronics co., ltd., Kyuho SHIN of Suwon-si (KR) for samsung electronics co., ltd., Pyoje CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L12/18
Abstract: disclosed are an electronic device for providing personalized group service and a control method. the electronic device includes a touchscreen display, communication circuitry, and at least one processor. the at least one processor may be set to: detect at least one external electronic device positioned around the electronic device by the communication circuitry, receive a request for generating a group including the at least one external electronic device and the electronic device, determine, in response to receiving the request, whether a number of communications between the at least one detected external electronic device and the electronic device is at least a pre-designated number, determine a attributes of the group including the at least one external electronic device based on at least the result of the determination and display an indicator, indicating the at least one detected external electronic device, on the touch screen display according to the attribute.
Inventor(s): Yoonseon HAN of Suwon-si (KR) for samsung electronics co., ltd., Jungje SON of Suwon-si (KR) for samsung electronics co., ltd., Joonwoo KIM of Seoul (KR) for samsung electronics co., ltd., Sangheon PACK of Seoul (KR) for samsung electronics co., ltd., Jaewook LEE of Seoul (KR) for samsung electronics co., ltd., Yujin TAE of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H04L43/028, H04L41/0806, H04L45/24, H04L61/2521
Abstract: provided are a method and apparatus for transmitting and receiving a data packet in a wireless communication system, the method including: provisioning at least one virtual network function (vnf) corresponding to some or all of a plurality of network functions (nfs) included in a first core network; registering, in the first core network, the provisioned at least one vnf; receiving a first packet from a user equipment (ue) and determining a path through which the first packet is to be transmitted, from among a first path between a user plane function (upf) of the first core network and an electronic device and a second path between a upf of a second core network and the electronic device; and transmitting the first packet through the determined path.
Inventor(s): Jeonghwa Lee of Suwon-si (KR) for samsung electronics co., ltd., Euikyum Moon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L43/028, H04L43/062, H04L67/14
Abstract: the present disclosure provides methods and apparatuses for provisioning a bidirectional filter. in some embodiments, a method of a first network entity performing a session management function (smf) in a communication system includes obtaining a first filter for a first direction and a second filter for a second direction that are associated with an application, identifying whether the first filter is a bidirectional filter based on a result of comparing the first filter and the second filter, identifying whether a second network entity performing a user plane function (upf) supports a function of obtaining the second filter, based on the first filter being identified as the bidirectional filter, and transmitting, to the second network entity, a first message including the first filter and information indicating that the first filter is the bidirectional filter, based on identifying that the second network entity supports the function of obtaining the second filter.
Inventor(s): Youngwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Wonbo LEE of Suwon-si (KR) for samsung electronics co., ltd., Youngki HONG of Suwon-si (KR) for samsung electronics co., ltd., Sungin KIM of Suwon-si (KR) for samsung electronics co., ltd., Hongshik KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangsoo LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L47/24, H04L47/12, H04L49/9005
Abstract: an electronic device is provided. the electronic device includes an application processor comprising a plurality of cores, and a communication processor electrically connected to the application processor. the application processor may configure at least one session associated with respective applications based on quality of service (qos) so as to correspond to at least one core from among the plurality of cores, transmit, to the communication processor, information corresponding to a first core configured for a first session from among the at least one session, receive a data packet of the first session from the communication processor, and process the received data packet of the first session by means of the first core configured for the first session, based on the information corresponding to the first core.
Inventor(s): Mehrdad SHARIAT of Staines (GB) for samsung electronics co., ltd.
IPC Code(s): H04L67/1034, H04L41/40, H04W24/10
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by a first network data analytics function (nwdaf) is provided. the method comprises: receiving, from a nwdaf service consumer, a first request for first analytics information, the first request including first time information on a first time duration when the first analytics information is needed for the nwdaf service consumer; transmitting, to a second nwdaf, a second request for second analytics information, the second request including second time information on a second time duration when the second analytics information is needed for the first nwdaf; receiving, from the second nwdaf, a second response including the second analytics information; and transmitting, to the nwdaf service consumer, a first response including the first analytics information generated based on second analytics information received from the at least one second nwdaf.
Inventor(s): Taejeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Byounggyu PARK of Suwon-si (KR) for samsung electronics co., ltd., Hyunsuk CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jongkeun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jusung MAENG of Suwon-si (KR) for samsung electronics co., ltd., Garam LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyunghwan SONG of Suwon-si (KR) for samsung electronics co., ltd., Kidoc SON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04M1/02, G06F1/16
Abstract: according to an embodiment of the disclosure, an electronic device may comprise a first housing, a second housing, a hinge structure, and/or a flexible display. the hinge structure may be rotatably connect the second housing to the first housing. the flexible display may be at least partially bendable in response to the rotation of the second housing relative to the first housing. the hinge structure may include at least one rotating member, at least one detent member, and/or at least one pin member. the rotating member may include a first detent member coupled to the first housing and rotatable about a first rotational axis and/or a second detent member coupled to the second housing and rotatable about a second rotational axis parallel to the first rotational axis. the detent member may include a first detent member disposed in the first rotating member and including a first detent slot and/or a second detent member disposed in the second rotating member and including a second detent slot. the pin member may include a first pin member slidably connected to the first detent slot and/or a second pin member slidably connected to the second detent slot. the first detent member may be configured to provide an elastic force to the first pin member. the second detent member may be configured to provide an elastic force to the second pin member.
Inventor(s): Namhyun KANG of Suwon-si (KR) for samsung electronics co., ltd., Minah KOH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04M1/72454, G06F3/0354
Abstract: an electronic device includes a communication module for communication with an accessory cover including a first cover and a second cover, at least one sensor module, a display module, a memory and a processor operatively connected to the communication module, the at least one sensor module, the display module, and the memory. the processor may detect mounting of the accessory cover through the communication module, check sensing information regarding the first cover and the second cover by using the at least one sensor module, and change, on the basis of the sensing information, configuration information for the display module when the first cover is open and the second cover is closed.
Inventor(s): Mahesh P J of Bengaluru (IN) for samsung electronics co., ltd., Pavan SUDHEENDRA of Bengaluru (IN) for samsung electronics co., ltd., Narasimha Gopalakrishna PAI of Bengaluru (IN) for samsung electronics co., ltd., Prityush CHANDRA of Bengaluru (IN) for samsung electronics co., ltd., Chevuru SAI JASWANTH of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): H04N5/262, G06T9/00, H04N23/959, G06T7/10
Abstract: a method and a system for generation of a plurality of portrait effects in an electronic device are provided. the method includes feeding an image captured from the electronic device into an encoder pre-learned using a plurality of features corresponding to the plurality of portrait effects and extracting, using the encoder, at least one of one or more low level features and one or more high level features from the image. the method includes generating, for the image, one or more first portrait effects of the plurality of portrait effects by passing the image through one or more first decoders. the method includes generating, for the image, one or more second portrait effects of the plurality of portrait effects by passing the image through one or more second decoders, wherein each of the one or more first portrait effect, and the one or more second portrait effects is generated in a single inference.
Inventor(s): Kwangseok BYON of Suwon-si (KR) for samsung electronics co., ltd., Bongchan KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaehyoung PARK of Suwon-si (KR) for samsung electronics co., ltd., Jonghoon WON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/68, G03B5/06, H04N23/90
Abstract: a camera module according an embodiment includes: a lens assembly, an image sensor, an optical image stabilization (ois) carrier configured to simultaneously rotate the lens assembly and the image sensor based on an axis perpendicular to an optical axis, a housing, a first ois coil disposed to a first side surface of the ois carrier, a second ois coil disposed to a second side surface of the ois carrier, a first ois magnet disposed to face the first ois coil, a second ois magnet disposed to face the second ois coil, a frame including a first portion disposed between the third side surface of the ois carrier opposite the first side surface and the housing and including at least one first guide portion, and a second portion extending from the first portion and disposed between the fourth side surface of the ois carrier opposite the second side surface and the housing, at least one first object disposed between the first portion and the third side surface, and at least one second object disposed between the second portion and the housing. the at least one first object may be configured to roll along the at least one first guide portion based on the ois carrier rotating.
Inventor(s): DONG-JIN PARK of Suwon-si (KR) for samsung electronics co., ltd., SEONGWOOK SONG of Suwon-si (KR) for samsung electronics co., ltd., JEEHONG LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyukjung Lee of Suwon-si (KR) for samsung electronics co., ltd., Sunghyuk Yim of Suwon-si (KR) for samsung electronics co., ltd., WOOSEOK CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/443, H04N25/46, H04N25/78, H04N23/67
Abstract: an image sensor includes a pixel array including a plurality of pixels arranged in a row direction and a column direction and a read-out circuit that generates image data and phase data based on a sensing signal received from the pixel array. the image sensor is configured the resolution of the phase data output by read-out circuit depending on target area information for the pixel array, the target area information received from outside of the image sensor.
Inventor(s): Wonchul CHOI of Suwon-si (KR) for samsung electronics co., ltd., Kyungho LEE of Suwon-si (KR) for samsung electronics co., ltd., Heesang KWON of Suwon-si (KR) for samsung electronics co., ltd., Seoyun PARK of Suwon-si (KR) for samsung electronics co., ltd., Jung Bin YUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/704, H04N25/78, H04N25/77
Abstract: an image sensor according to the present disclosure includes: a first pixel group, which includes a first pixel unit corresponding to a first color, and a plurality of first pixels arranged with an m�n form. the image sensor further includes a second pixel unit, which corresponds to a second color, and a plurality of second pixels arranged with the m�n form. the image sensor further includes a third pixel unit, which corresponds to a third color, and a plurality of third pixels arranged with the m�n form, and m and n are natural numbers greater than or equal to 3. a first micro lens is formed on the first pixel unit and shared by at least two adjacent first pixels in a first direction among the plurality of first pixels.
Inventor(s): Moo Young KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/75, H04N25/79
Abstract: an image sensor includes first and second column lines, and a read circuit configured to receive pixel signals through the first and second column lines. the first column line and the second column line each include a main wire, a first wire between one end of the main wire and the first interlayer connection region, and a second wire connected with an opposite end of the main wire. a first distance between the first and second column lines is longer than a second distance between a connection point of the first column line and the first interlayer connection region and a connection point of the second column line and the first interlayer connection region. a length of the first wire of the first column line is greater than a length of the first wire of the second column line.
Inventor(s): Sang Un BANG of Seongnam-si (KR) for samsung electronics co., ltd., Yong Hwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Arom LEE of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H04R1/10
Abstract: an electronic device that includes a first mobile device, and a second mobile device directly connected with the first mobile device through a power line, the second mobile device being configured to perform power line communication with the first mobile device through the power line for a first time period, and perform wireless communication with an external device for a second time period, the second time period not overlapping the first time period.
20240031727.HEADSET INCLUDING IN-EAR MICROPHONE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Haekeu PARK of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Kyeongcheol YOON of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Hyeonyeong JEONG of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Sunghoon CHO of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Seonmi KIM of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Jeock LEE of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Seyoun KWON of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04R1/10
Abstract: a headset including an in-ear microphone is disclosed, the headset including a first frame including a first surface toward a first direction, a second surface toward a second direction opposite to the first direction, and a side surface surrounding at least part of a space between the first surface and the second surface, a speaker seating portion formed by recessing by a specific depth from a first portion of the first surface toward the second surface, a space formed between the speaker seating portion and the second surface, a speaker hole penetrated from the speaker seating portion to the space, a microphone hole penetrated from a second portion of the first surface to the space, an acoustic hole formed by penetrating the second surface from the space, a speaker seated in the speaker seating portion, a first printed circuit board disposed on the second portion and having a via hole connected with the microphone hole, a second printed circuit board electrically connected with the first printed circuit board and a connection unit of the speaker, and a microphone mounted at a position aligned with the via hole on the first printed circuit board. various other embodiments identified in this document are also possible.
Inventor(s): Sungjin KIM of Suwon-si (KR) for samsung electronics co., ltd., Chulhan KIM of Suwon-si (KR) for samsung electronics co., ltd., Kiwook HAN of Suwon-si (KR) for samsung electronics co., ltd., Sohee KIM of Suwon-si (KR) for samsung electronics co., ltd., Haekeu PARK of Suwon-si (KR) for samsung electronics co., ltd., Juhee CHANG of Suwon-si (KR) for samsung electronics co., ltd., Sigyung JUNG of Suwon-si (KR) for samsung electronics co., ltd., Hyeonyeong JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04R1/10, H05K1/02, H05K1/16
Abstract: an electronic device according to an embodiment of the disclosure may include: a battery including an anode having a first length and a cathode having a second length different from the first length, a flexible printed circuit board electrically connected to the battery and surrounding at least part of a side surface of the battery, and a speaker stacked with the battery. the flexible printed circuit board may include a power wiring electrically connected to the anode and a ground wiring electrically connected to the cathode. a first current of a first winding direction generated due to a length difference between the cathode and the anode may flow in the battery, and a second current of a second winding direction opposite to the first winding direction may flow in a wiring disposed closer to the speaker between the power wiring and the ground wiring.
Inventor(s): Chamin PARK of Suwon-si (KR) for samsung electronics co., ltd., Jonghong KIM of Suwon-si (KR) for samsung electronics co., ltd., Cheongno YUN of Suwon-si (KR) for samsung electronics co., ltd., Soojung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04R1/28, H04R1/02
Abstract: an audio output device is provided. the audio output device includes a speaker, a case surrounding the speaker and including a first opening connected to the resonance space within the case, a plurality of air adsorbents disposed within the speaker, an adhesive member disposed on the first opening and including a second opening overlapping the first opening, and a mesh layer disposed on the adhesive member and covering the second opening. a diameter of the first opening is larger than a diameter of each of the plurality of air adsorbents, and a diameter of the second opening is smaller than the diameter of the first opening.
Inventor(s): Jang-ho JIN of Hwaseong-si (KR) for samsung electronics co., ltd., Myung-jae KIM of Suwon-si (KR) for samsung electronics co., ltd., Ji-hun PARK of Seoul (KR) for samsung electronics co., ltd., Young-jun RYU of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04R29/00, A63J17/00, G10H1/00, G06T13/20, G06F16/438, G06T13/80
Abstract: an electronic device and a method for controlling the electronic device, the method including receiving an input of a command to reproduce music contents, determining audio characteristics information on the music contents and situation information on an environment where the music contents are being reproduced; and displaying a visualization effect of visualizing the music contents using the audio characteristics information and the situation information, and reproducing the music contents.
Inventor(s): Basavaraj Jayawant PATTAN of Bangalore (IN) for samsung electronics co., ltd., Ricky Kumar KAURA of Middlesex (GB) for samsung electronics co., ltd.
IPC Code(s): H04W4/14, H04W24/02
Abstract: embodiments herein provide a method for managing short data service (sds) communication in a mission critical data (mcdata) communication system. the method includes determining, by a transmitting mcdata ue, whether a pre-determined criteria is met for transmitting a one-to-one standalone sds message or a group standalone sds message to receiving mcdata ue (s). further, the method includes determining data size of the one-to-one standalone sds message or group standalone sds message. furthermore, the method includes transmitting the one-to-one standalone sds message to the receiving mcdata ue for one-to-one communication or group communication using one of a signaling control plane and a media plane based the determined data size of the one-to-one standalone sds message or group standalone sds message.
Inventor(s): Kyungjoo SUH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W8/06, H04W60/00
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. the disclosure provides a method, an apparatus, and a system for supporting mobility of a terminal.
Inventor(s): Jicheol LEE of Suwon-si (KR) for samsung electronics co., ltd., Erik GUTTMAN of Staines (GB) for samsung electronics co., ltd., Hyesung KIM of Suwon-si (KR) for samsung electronics co., ltd., Duckey LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W12/06, H04W12/69, H04W8/18
Abstract: disclosed is a method and device for binding a user and a ue in a mobile communication system. a method by a network entity may comprise receiving provisioning information for a user from a service provider, receiving a binding request message including verification information and a digital user identifier from a user equipment completing user authentication for the service provider, verifying the verification information using the provisioning information, and the verification information being successfully verified, binding the digital user identifier with the ue's subscriber information and storing in a subscriber database. the subscriber database may be used to provide a service corresponding to a service invocation to the ue in response to receiving the service invocation including the digital user identifier from the service provider.
Inventor(s): Kyeongin Jeong of Allen TX (US) for samsung electronics co., ltd., Shiyang Leng of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W24/08, H04W64/00, H04B7/185
Abstract: methods and apparatuses for an enhanced radio link failure (rlf) detection in a non-terrestrial network (ntn) are provided. a method of operating a user equipment (ue) includes identifying a value of a timer and a time value and determining that the timer has started upon detection of a radio link problem. the radio link problem is based on a first counter. the method further includes determining that a current time is passed the time value and detecting a radio link failure based on a determination that the timer has started and the current time is passed the time value.
Inventor(s): Hyeongjoo OH of Suwon-si (KR) for samsung electronics co., ltd., Kyoungwoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaewoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Sungsoo KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W24/10, H04W24/08
Abstract: an electronic device may include: a first antenna configured to transmit a signal or receive a signal; a second antenna configured to receive the signal; a communication circuit connected to the first antenna and the second antenna, and configured to receive data from or transmit data to a network via a first node; and a communication processor, wherein the communication processor may receive a measurement object including information related to a second node adjacent to the first node from the network. the communication processor may identify a first quality of the signal received through the first antenna and a second quality of the signal received through the second antenna. the communication processor may identify whether the first quality satisfies a report condition included in the measurement object, based on that the electronic device satisfies a designated condition. the communication processor may be configured to transmit a measurement report including the first quality to the network, based on that the first quality satisfies the report condition.
Inventor(s): Dalin Zhu of Allen TX (US) for samsung electronics co., ltd., Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd., Emad N. Farag of Flanders NJ (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W24/10, H04L43/0823, H04W72/044
Abstract: a method of operating a user equipment (ue) includes receiving first information for a physical cell identifier (pci) different from a serving cell pci; receiving second information for source or measurement reference signals (rss) for the pci; determining, based on one or more transmission configuration indicator (tci) states, the first information, and the second information, a reception spatial domain filter for reception of at least one of downlink (dl) rss and channels from the pci; and measuring, based on the first information and the second information, the measurement rs. the method further includes determining, based on the measured measurement rss, the first information, and the second information, a beam report and transmitting the beam report for the pci on an uplink (ul) channel. a beam refers to a spatial property used to receive or transmit a source rs or a channel.
Inventor(s): Sangsoo JEONG of Suwon-si (KR) for samsung electronics co., ltd., Hoyeon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W28/02, H04W76/25
Abstract: the disclosure relates to a method and a device for controlling a data rate in a network slice of a wireless communication system. a method for controlling a bit rate of a network slice by a session management function (smf) device of a wireless communication system is provided. the method includes receiving a slice control policy information from a policy and charging function (pcf) device, transmitting, to a user plane function (upf) device, a parameter for controlling each slice based on the received slice control information, and receiving, from the upf device, a response signal for whether the transmitted parameter is acceptable.
Inventor(s): Heungseop AHN of Suwon-si (KR) for samsung electronics co., ltd., Hanjung PARK of Suwon-si (KR) for samsung electronics co., ltd., Joonhwan KWON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W28/084, H04W28/08, H04L5/00
Abstract: a schedule coordinator schedules an air resource of a virtual distributed unit (vdu) in a wireless communication system. the schedule coordinator identifies a radio unit (ru) to be migrated to a target vdu, from among one or more rus connected to a source vdu, requests the source vdu to exclusively transmit or receive first information including synchronization information of one or more user equipments (ues) connected to the ru. the schedule coordinator allocates a source vdu-dedicated air resource to the source vdu, and allocates a target vdu-dedicated air resource to the target vdu. when a migration of the ru is completed, the schedule coordinator requests the target vdu to exclusively transmit or receive the first information, and requests the source vdu to stop transmitting or receiving the first information.
Inventor(s): Sangyeob JUNG of Suwon-si (KR) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd., Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W36/08, H04W48/20, H04W48/16, H04W8/08, H04W36/00, H04W24/10, H04W36/30, H04W36/32, H04W72/542
Abstract: a method of relaxing frequency measurement by a terminal in a wireless communication system is provided. the method includes receiving, from a base station, system information comprising first configuration information associated with frequency measurement and second configuration information associated with relaxed frequency measurement, the second configuration information comprising at least one of first information associated with a criterion for the terminal with low mobility (low mobility criterion) or second information associated with a criterion for the terminal not at cell edge (not at cell edge criterion), identifying whether at least one of the low mobility criterion or the not at cell edge criterion is fulfilled, and determining whether to perform frequency measurement based on the identifying.
Inventor(s): Jinkyu KANG of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngbum KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Taehyoung KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Taehan BAE of Gyeonggi-do (KR) for samsung electronics co., ltd., Jeongho YEO of Gyeonggi-do (KR) for samsung electronics co., ltd., Jinyoung OH of Gyeonggi-do (KR) for samsung electronics co., ltd., Seunghoon CHOI of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W52/14, H04W52/24, H04L5/00, H04W52/42, H04W52/08
Abstract: a method, performed by a terminal, of transmitting and receiving a signal in a wireless communication system is provided. the method includes receiving a first reference signal (rs) on a first downlink bandwidth part (bwp) of a first carrier of a serving cell; determining first pathloss information for a transmission of a physical uplink control channel (pucch) based on the first rs received on the first downlink bwp of the first carrier of the serving cell; determining a transmission power for the pucch based on the first pathloss information; receiving a second rs on a second downlink bwp of a second carrier of the serving cell; determining second pathloss information for a transmission of a physical uplink shared channel (pusch) based on the second rs received on the second downlink bwp of the second carrier of the serving cell; and determining a transmission power for the pusch based on the second pathloss information.
Inventor(s): Haedong YEON of SUWON-SI (KR) for samsung electronics co., ltd., Joohyun DO of SUWON-SI (KR) for samsung electronics co., ltd., Hyunseok YU of SUWON-SI (KR) for samsung electronics co., ltd., Youngik CHO of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H04W52/36, H04W52/32
Abstract: an operating method of a wireless communications device includes identifying a modulation order and resource allocation information of a first uplink signal transmitted in a first symbol and a second uplink signal transmitted in a second symbol preceding the first symbol, controlling a difference between a supply modulator output voltage value for the first uplink signal and a supply modulator output voltage value for the second uplink signal, based on the identified order or information, and transmitting the first uplink signal, based on the controlled difference between the supply modulator output voltage values.
Inventor(s): Kyungjoo SUH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W60/00, H04W48/02, H04W12/06
Abstract: the disclosure relates to a 5g or 6g communication system for supporting higher data transmission rates. a method of a terminal in a wireless communication system according to the disclosure includes transmitting a first registration request message to an access and mobility management function (amf) through a base station, receiving, as a response to the first registration request message, a registration rejection message from the amf through the base station, and transmitting, based on the registration rejection message, a second registration request message to the amf through the base station.
Inventor(s): Fuyuan LI of Beijing (CN) for samsung electronics co., ltd., Lixiang XU of Beijing (CN) for samsung electronics co., ltd., Bin WANG of Beijing (CN) for samsung electronics co., ltd., Weiwei WANG of Beijing (CN) for samsung electronics co., ltd., Hong WANG of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W68/02, H04W56/00, H04W36/08
Abstract: a method and an apparatus for paging in a wireless communication system are provided. the method includes determining, by a radio access network (ran) node, information for paging, where the information for paging includes information for paging a user equipment (ue) which is related to a synchronization signal block (ssb) beam; and paging, by the ran node, the ue in an idle state or inactive state, based on the information for paging. the method can page a ue more accurately.
Inventor(s): Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W68/02, H04W72/232
Abstract: the present disclosure relates to a communication method and system for converging a 5th-generation (5g) communication system for supporting higher data rates beyond a 4th-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. the method performed by a terminal in a wireless communication system is provided. the method comprises identifying a first value of a time offset between a physical downlink control channel (pdcch) slot and a physical downlink shared channel (pdsch) slot; receiving, from a base station, downlink control information (dci) on a pdcch associated with a paging, the dci indicating a second value of the time offset larger than the first value; and receiving, from the base station, a paging message on a pdsch based on the second value.
Inventor(s): Xiaowan KE of Beijing (CN) for samsung electronics co., ltd., Hong WANG of Beijing (CN) for samsung electronics co., ltd., Lixiang XU of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W68/02, H04W76/10, H04W68/00, H04W76/25, H04W8/02, H04W76/28
Abstract: the present disclosure relates to a communication method and system for converging a 5-generation (5g) communication system for supporting higher data rates beyond a 4-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services.
Inventor(s): Xiaowan KE of Beijing (CN) for samsung electronics co., ltd., Hong WANG of Beijing (CN) for samsung electronics co., ltd., Lixiang XU of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W68/02, H04W76/10, H04W68/00, H04W76/25, H04W8/02, H04W76/28
Abstract: the present application provides a method for light connection control for a user equipment (ue), comprising the following steps of: acquiring, by a first radio access network node, light connection information for a ue; storing, by the first radio access network node, the acquired light connection information; and, performing, by the first radio access network node, light connection control of the ue based on the acquired light connection information for the ue. by adopting the technical scheme disclosed in the present application, the signaling overhead can be saved, and the delay of the ue access network can be reduced.
Inventor(s): Emad N. Farag of Flanders NJ (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd., Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W72/20
Abstract: an apparatus for beam management includes a transceiver configured to receive configuration information for one or more transmission configuration indicator (tci) states and corresponding channels, receive one or more tci state identifiers (ids) on a channel for conveying tci state ids from among the corresponding channels, and transmit an acknowledgement message in response to the reception of the one or more tci state ids. the apparatus further includes a processor configured to determine, based on the one or more tci state ids, tci states for data and control channels, respectively, from among the corresponding channels, and update spatial filters for the data and control channels based on the determined tci states for the data channels and the control channels, respectively. the transceiver is further configured to receive the data channels and the control channels based on the updated spatial filters for the data and the control channels, respectively.
Inventor(s): Sungjin PARK of Gyeonggi-do (KR) for samsung electronics co., ltd., Jeongho YEO of Gyeonggi-do (KR) for samsung electronics co., ltd., Younsun KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Jinyoung OH of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/23, H04W72/0453
Abstract: the present invention relates to a communication technique for convergence of an iot technology and a 5g communication system for supporting a higher data transmission rate beyond a 4g system, and a system therefor. the present disclosure can be applied to an intelligent service (for example, a smart home, a smart building, a smart city, a smart car or connected car, health care, digital education, retail business, security and safety-related service, etc.) on the basis of a 5g communication technology and an iot-related technology. a method for communicating by a base station according to the present invention comprises transmitting control information relating to at least two services to a terminal; and transmitting data relating to the at least two services to the terminal, wherein at least one of a control region for transmitting the control information and a data region for transmitting the data may include at least two frequency bandwidths corresponding to each of the at least two services.
Inventor(s): Jinyoung OH of Suwon-si (KR) for samsung electronics co., ltd., Taehyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinhyun PARK of Suwon-si (KR) for samsung electronics co., ltd., Youngrok JANG of Suwon-si (KR) for samsung electronics co., ltd., Hyoungju JI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/231, H04B7/06, H04L5/00
Abstract: the present disclosure relates to a communication technique for merging iot technology with a 5g communication system for supporting a data transmission rate higher than that of a 4g system, and a system therefor. the present disclosure can be applied to intelligent services (for example, smart homes, smart buildings, smart cities, smart cars or connected cars, healthcare, digital education, retail businesses, security- and safety-related services, and the like) on the basis of 5g communication technology and iot-related technology. embodiments of the present disclosure relate to a wireless communication system and, more particularly, to a cell activation method and device in a wireless communication system.
Inventor(s): Ebrahim MolavianJazi of San Jose CA (US) for samsung electronics co., ltd., Aristides Papasakellariou of Houston TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W72/232, H04W72/1268, H04W16/32
Abstract: downlink control information (dci) size alignment for a scheduled cell with multiple scheduling cells. a includes receiving: first information for first fields of a first dci format when on a primary cell (pcell) and second information for second fields of the first dci format when on a secondary cell (scell). the method further includes determining: a first size for the first dci format on the pcell, a second size for the first dci format on the scell, and a first number of padding bits equal to an absolute difference between the first size and the second size. when the scell is deactivated, the second size is determined based on a first reference downlink (dl) bandwidth part (bwp) for the scell. the method further includes receiving the first dci format in a physical downlink control channel (pdcch) reception on the pcell or the scell.
Inventor(s): Carmela Cozzo of San Diego CA (US) for samsung electronics co., ltd., Hongbo Si of Plano TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W74/08, H04W74/00
Abstract: methods and apparatuses for multiple physical random access channel (prach) transmissions in a wireless communication system. a method includes receiving a system information block (sib) that indicates a first number of multiple prach transmissions, a first partition of prach occasions (ros) associated with multiple prach transmissions, a second partition of ros associated with one prach transmission, and one or more first sets of multiple ros associated with the first number of multiple prach transmissions. the one or more first sets include ros from the first partition of ros but not from the second partition of ros the method further includes determining a group of ros from the one or more first sets of multiple ros, determining a prach preamble for transmission in a first number of ros of the group of ros, and transmitting the prach preamble in the first number of ros of the group of ros.
Inventor(s): Gupil CHEONG of Suwon-si (KR) for samsung electronics co., ltd., Moonseok KANG of Suwon-si (KR) for samsung electronics co., ltd., Doosuk KANG of Suwon-si (KR) for samsung electronics co., ltd., Bokun CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/15, H04W48/10, H04W72/542
Abstract: disclosed is an electronic device comprising: a first communication circuit configured to support communication according to a bluetooth protocol; a second communication circuit configured to support communication according to an ultra-wideband (uwb) protocol; a processor; and a memory. the electronic device can be configured to: receive a first signal from a second external electronic device; transmit, to at least one first external electronic device, first quality information related to communication with the second external electronic device; receive, from the at least one first external electronic device, second quality information related to communication between the at least one first external electronic device and the second external electronic device; and, based on the first quality information and the second quality information, determine, from among the electronic device and the at least one first external electronic device, a device to communicate with the second external electronic device on the basis of the uwb protocol.
Inventor(s): Daesung AN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/18
Abstract: provided is a user terminal device. the user terminal device includes a communication interface, a display, and a processor to control the user terminal device by being connected with the communication interface and the display, and the processor controls the communication interface to provide, to a home appliance operating through a soft access point, information about an access point, and based on joining failure information about the access point being received from the home appliance through the communication interface, control the display to display a screen guiding of joining failure based on the joining failure information.
Inventor(s): Sangkyu BAEK of Suwon-si (KR) for samsung electronics co., ltd., Hyunjeong KANG of Suwon-si (KR) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/19, H04W76/15, H04W76/27
Abstract: the present disclosure relates to a pre-5-generation (5g) or 5g communication system to be provided for supporting higher data rates beyond 4-generation (4g) communication system such as long term evolution (lte). according to various embodiments of the present disclosure, a method for operating a user equipment (ue) supporting carrier aggregation (ca) with a master cell group (mcg) and a secondary cell group (scg) in a wireless communication system is provided. the method comprising: detecting a radio link failure (rlf) of the mcg; when the rlf of the mcg is detected, determining whether a transmission to the scg is suspended; and when the transmission to the scg is determined to be suspended, initiating a connection re-establishment procedure.
20240032188.SUBSTRATE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sun Jun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K1/02, H05K1/14
Abstract: a substrate including a base substrate and first to fourth identification codes on the base substrate, wherein the substrate is one of a plurality of substrates at a row ‘c’ and a column ‘d’ in a (b)th strip of an (a)th panel, where ‘a’, ‘b’, ‘c’ and ‘d’ are natural numbers, the plurality of substrates being included in the (b)th strip of the (a)th panel, the first identification code includes information on the ‘a’, the second identification code includes information on the ‘b’, the third identification code includes information on the ‘c’, and the fourth identification code includes information on the ‘d’, may be provided.
Inventor(s): Youngbae KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K1/11, H05K1/18, H05K1/02
Abstract: a film package includes a film substrate extending in a first direction and including a first side and a second side facing each other, the film substrate including a device region between the first side and the second side, and the film substrate including a reinforcing region adjacent to at least one side of the device region in a second direction, the second direction intersecting the first direction. the film package includes a semiconductor chip having an elongated rod shape, and the semiconductor chip on the device region of the film substrate in the first direction, interconnection patterns electrically connected to the semiconductor chip, the interconnection patterns comprising input patterns extending toward the first side on the film substrate, and output patterns extending toward the second side on the film substrate, and a protective layer on the film substrate to cover at least a portion of the interconnection patterns.
Inventor(s): Taihwan CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jongdoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Jongmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Ungki MIN of Suwon-si (KR) for samsung electronics co., ltd., Gunhee PARK of Suwon-si (KR) for samsung electronics co., ltd., Daeseung PARK of Suwon-si (KR) for samsung electronics co., ltd., Garam YU of Suwon-si (KR) for samsung electronics co., ltd., Bongyeol LEE of Suwon-si (KR) for samsung electronics co., ltd., Hanyeop LEE of Suwon-si (KR) for samsung electronics co., ltd., Gun LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K1/18
Abstract: an electronic device is provided. the electronic device includes an electronic component including a coil therein, and a printed circuit board that is disposed to surround at least a part of the electronic component and includes plural slits disposed at preset intervals in at least one of regions facing the electronic component, wherein each of the plural slits may include a central slit portion extended along a center of the slit, and a symmetric slit portion extended to be symmetric with respect to the central slit portion.
20240032217.DISPLAY APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Dowan KIM of Suwon-si (KR) for samsung electronics co., ltd., Kiwoong KIM of Suwon-si (KR) for samsung electronics co., ltd., Yoonah KIM of Suwon-si (KR) for samsung electronics co., ltd., Chiun PARK of Suwon-si (KR) for samsung electronics co., ltd., Kwangsung HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K5/02, H05K5/00, H01L25/075
Abstract: a display apparatus includes: a display module including a substrate on which a plurality of light emitting diodes (leds) are mounted; a cabinet provided to support the display module; and a circuit case attached to the cabinet. the display module is provided to be detachable from and mountable on a front side of the cabinet, and the display module is provided to be detachable from and mountable on a rear side of the cabinet.
Inventor(s): Moohyun BAEK of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Daeyoung NOH of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H05K5/02, H05K5/03
Abstract: an electronic device includes: a first surface plate, a second surface plate positioned on a side opposite to the first surface plate, and a frame module including a frame enclosing at least a portion of a space formed between the first surface plate and the second surface plate. the frame module includes a bracket having a bracket end surface, an outer cover comprising a first cover surface and a second cover surface opposite to the first cover surface, and enclosing the bracket, and a buffer groove defining a space between the bracket end surface of the bracket and at least a portion of the second cover surface of the outer cover which face each other, and the buffer groove is filled with a buffer member comprising a buffer material.
Inventor(s): Kwonho SONG of Suwon-si (KR) for samsung electronics co., ltd., Hyeoncheol JEONG of Suwon-si (KR) for samsung electronics co., ltd., Seungbum CHOI of Suwon-si (KR) for samsung electronics co., ltd., Wonho LEE of Suwon-si (KR) for samsung electronics co., ltd., Jeonggyu JO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K5/02
Abstract: an electronic device includes: a first housing; a second housing; a hinge device connecting the first housing and the second housing to be foldable relative to each other; and a flexible display supported by the first housing and the second housing, wherein the flexible display may include: a window layer; a display panel laminated under the window layer; a bending part bent from the display panel to a rear surface of the flexible display at a first edge of the flexible display; and a first filling member in a first space, within the electronic device, such as to surround at least a part of the first edge together with the bending part, wherein the first filling member is not within a second space between the window layer and the display panel.
20240032269.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): MINGYU KIM of Suwon-si (KR) for samsung electronics co., ltd., MUNHYEON KIM of Hwaseong-si (KR) for samsung electronics co., ltd., DAEWON HA of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H10B10/00, H01L29/10, G11C11/412
Abstract: a method of manufacturing a semiconductor device includes forming a first sacrificial and first active layer on a substrate; forming a first mask pattern on a portion of the substrate; etching the first sacrificial and first active layer partially using the first mask pattern to expose a portion of a top surface of the substrate; forming a semiconductor layer on the exposed top surface of the substrate; forming sacrificial layers and active layers on the first active and semiconductor layer, the active layers including an uppermost second active layer; forming a second mask pattern on a portion of the second active layer; forming a trench using the second mask pattern, the trench defining a first and second active pattern; and removing the sacrificial layers to form a first and second channel patterns on the first and second active patterns, respectively, wherein the first active pattern includes the semiconductor layer.
20240032275.SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sanghoon Uhm of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: a semiconductor device includes bit lines, gate electrodes, a gate insulation pattern, a channel structure, a metal oxide pattern and a metal pattern on a substrate. the bit lines extend in a first direction and are spaced apart from each other in a second direction. the gate electrodes are disposed on the bit lines, spaced apart from each other in the first direction, and extend in the second direction. the gate insulation pattern is formed on a sidewall in the first direction of the gate electrodes. the channel structure is formed on a sidewall in the first direction of the gate insulation pattern. the metal oxide pattern is formed on a sidewall in the first direction of the channel structure. the metal pattern is formed on a sidewall in the first direction of the metal oxide pattern.
20240032276.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jimin CHAE of Suwon-si (KR) for samsung electronics co., ltd., Younglim PARK of Suwon-si (KR) for samsung electronics co., ltd., Dongmin SHIN of Suwon-si (KR) for samsung electronics co., ltd., Wooseop LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00, H10B53/30
Abstract: a semiconductor device includes a lower structure; a plurality of lower electrodes on the lower structure; an upper electrode on the plurality of lower electrodes; a dielectric layer between the plurality of lower electrodes and the upper electrode, and including a ferroelectric layer or an antiferroelectric layer; and a plurality of interfacial layers between the plurality of lower electrodes and the dielectric layer, wherein the plurality of interfacial layers include a first layer contacting the plurality of lower electrodes, and including a first metal element, a second metal element, different from the first metal element, and elemental nitrogen; and a second layer between the first layer and the dielectric layer, and including the first metal element, the second metal element, and elemental oxygen, and wherein a concentration of the second metal element in the first layer is lower than a concentration of the second metal element in the second layer.
Inventor(s): Taejin PARK of Suwon-si (KR) for samsung electronics co., ltd., Kyujin KIM of Suwon-si (KR) for samsung electronics co., ltd., Bongsoo KIM of Suwon-see (KR) for samsung electronics co., ltd., Huijung KIM of Suwon-si (KR) for samsung electronics co., ltd., Chulkwon PARK of Suwon-si (KR) for samsung electronics co., ltd., Gyunghyun YOON of Suwon-si (KR) for samsung electronics co., ltd., Heejae CHAE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: an integrated circuit (ic) semiconductor device includes: field insulating layers buried in field trenches disposed apart from each other inside a substrate; active regions defined by the field insulating layers; and active fins disposed on the active regions and protruding from surfaces of the field insulating layers. the field insulating layers include a first subfield insulating layer and a second subfield insulating layer, and a surface of the first subfield insulating layer is disposed at a level lower than a level of a surface of the second subfield insulating layer.
20240032286.INTEGRATED CIRCUIT DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Chansic Yoon of Suwon-si (KR) for samsung electronics co., ltd., Jongmin Kim of Suwon-si (KR) for samsung electronics co., ltd., Kiseok Lee of Suwon-si (KR) for samsung electronics co., ltd., Junhyeok Ahn of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00, H01L29/423
Abstract: provided is an integrated circuit device including a substrate that includes an active region defined by a trench isolation, a word line that extends in a first horizontal direction inside the substrate across the active region, a bit line that extends on the word line in a second horizontal direction orthogonal to the first horizontal direction, a direct contact that electrically connects the bit line to the active region, a pad that is on the active region and has a horizontal width that is greater than that of the active region, a buried contact that contacts a sidewall of the pad, and a conductive landing pad that extends on the buried contact in a vertical direction and faces the bit line in the first horizontal direction.
20240032287.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Eunjung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaehyung PARK of Suwon-si (KR) for samsung electronics co., ltd., Kihyung NAM of Suwon-si (KR) for samsung electronics co., ltd., Hoju SONG of Suwon-si (KR) for samsung electronics co., ltd., Yunjae LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: a semiconductor device including a substrate including a cell array region and a peripheral circuit region, the substrate including first active region defined in the cell array region and second active region defined in the peripheral circuit region, a plurality of word lines in the substrate and extending in a first direction, a bit line in the cell array region and extending in a second direction perpendicular to the first direction, a plurality of first pad separation patterns on corresponding once of the word lines, respectively, and extending in the first direction, a cell pad structure on the substrate and between two adjacent ones of the first pad separation patterns, and a second pad separation pattern between two adjacent ones of the first pad separation patterns and being adjacent to the cell pad structure may be provided.
Inventor(s): Kyeonghoon PARK of Suwon-si (KR) for samsung electronics co., ltd., Juseong MIN of Suwon-si (KR) for samsung electronics co., ltd., Jaebok BAEK of Suwon-si (KR) for samsung electronics co., ltd., Donghyuck JANG of Suwon-si (KR) for samsung electronics co., ltd., Sanghun CHUN of Suwon-si (KR) for samsung electronics co., ltd., Jeehoon HAN of Suwon-si (KR) for samsung electronics co., ltd., Taeyoon HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/40, H10B43/10, H10B43/27, H01L23/522, H01L23/528, H10B43/35, H10B41/10, H10B41/27, H10B41/35, H10B41/40, G11C5/06
Abstract: a semiconductor device includes a peripheral circuit structure including circuits, wiring layers, and via contacts, a plate common source line covering the peripheral circuit structure, an insulating plug passing through the plate common source line, a lateral insulating spacer between the peripheral circuit structure and the plate common source line, a memory stack structure including gate lines on the plate common source line, a through contact passing through at least one of the gate lines and the insulating plug, the through contact being connected to a first via contact of the via contacts, and a source line contact passing through the lateral insulating spacer, the source line contact being between a second via contact of the via contacts and the plate common source line, wherein a width of the first via contact is greater than a width of the insulating plug in a lateral direction.
Inventor(s): Jongho WOO of Suwon-si (KR) for samsung electronics co., ltd., Youngji Noh of Suwon-si (KR) for samsung electronics co., ltd., Minjun Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B51/20, H10B51/30, H10B51/40
Abstract: a three-dimensional semiconductor device includes a plate common source line, first and second word lines spaced apart from each other to at least partially define a vertical space therebetween, a channel pattern in the vertical space, a ferroelectric layer including a first portion between the channel pattern and the first word line, a second portion between the channel pattern and the second word line, and a third portion contacting the plate common source line, a bit line in the vertical space to contact the channel pattern and having a first width in a first horizontal direction, and a source line spaced apart from the bit line in the vertical space to contact the channel pattern, having a second width greater than the first width in the first horizontal direction, and having a source line contact portion inside the plate common source line.
Inventor(s): Wooyoung YANG of Suwon-si (KR) for samsung electronics co., ltd., Bonwon KOO of Suwon-si (KR) for samsung electronics co., ltd., Chungman KIM of Suwon-si (KR) for samsung electronics co., ltd., Kwangmin PARK of Seoul (KR) for samsung electronics co., ltd., Hajun SUNG of Hwaseong-si (KR) for samsung electronics co., ltd., Dongho AHN of Hwaseong-si (KR) for samsung electronics co., ltd., Changseung LEE of Yongin-si (KR) for samsung electronics co., ltd., Minwoo CHOI of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B63/00, G11C13/00, H10B61/00, H10N50/01, H10N50/80, H10N70/20, H10N70/00
Abstract: a chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. the switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (b), aluminum (al), scandium (sc), manganese (mn), strontium (sr), and/or indium (in) in a thickness direction thereof. the switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).
20240032310.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kyungdon MUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B80/00, H01L23/538, H01L23/00
Abstract: a semiconductor package may include a base wiring structure, a first bridge chip and a cache memory chip on the base wiring structure and spaced apart from each other in a horizontal direction, and logic semiconductor chips adjacent to each other on the first bridge chip and the cache memory chip. logic semiconductor chips each may include a cache memory. the first bridge chip may overlap at least two of the logic semiconductor chips in a vertical direction and the first bridge chip may include first bridge wirings electrically connecting at least two of the logic semiconductor chips. the cache memory chip may overlap the cache memory of at least one of the logic semiconductor chips in the vertical direction and the cache memory chip may be electrically connected to the cache memory of at least one of the logic semiconductor chips.
20240032311.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hyunsoo Chung of Suwon-si (KR) for samsung electronics co., ltd., Young Lyong Kim of Suwon-si (KR) for samsung electronics co., ltd., Inhyo Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B80/00, H10B41/27, H10B43/27
Abstract: a semiconductor device includes a peripheral circuit structure including peripheral circuits on a substrate and first bonding pads electrically connected to the peripheral circuits and a cell array structure including memory cells on a semiconductor layer and second bonding pads electrically connected to the memory cells and bonded to the first bonding pads. the cell array structure includes a stacked structure including insulating layers and electrodes, an external connection pad on a surface of the semiconductor layer, a dummy pattern at a same level as the semiconductor layer relative to the substrate, and a photosensitive insulating layer on the semiconductor layer and the dummy pattern. a first thickness of a portion of the photosensitive insulating layer vertically overlapping the external connection pad is greater than a second thickness of another portion of the photosensitive insulating layer vertically overlapping the dummy pattern.
Inventor(s): Taeyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyungdon MUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B80/00, H01L25/065, H01L23/00, H01L23/538
Abstract: a semiconductor chip stack structure may include a buffer chip, a first memory chip on the buffer chip and including a plurality of first banks, a second memory chip on the first memory chip and including a plurality of second banks, first chiplets between the first memory chip and the second memory chip and configured to perform calculations on data stored in the plurality of first banks of the first memory chip, second chiplets between the first memory chip and the second memory chip and configured to perform calculations on data stored in the plurality of second banks of the second memory chip, and a third memory chip on the buffer chip. the third memory chip may include a plurality of third banks. the third memory chip may be electrically connected to the first memory chip and the second memory chip.
SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
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