SAMSUNG ELECTRONICS CO., LTD. patent applications on April 25th, 2024
Patent Applications by SAMSUNG ELECTRONICS CO., LTD. on April 25th, 2024
SAMSUNG ELECTRONICS CO., LTD.: 177 patent applications
SAMSUNG ELECTRONICS CO., LTD. has applied for patents in the areas of H01L23/00 (16), H01L29/775 (15), H01L23/498 (14), H10B80/00 (12), H01L24/16 (11)
With keywords such as: device, layer, based, signal, configured, pattern, including, semiconductor, data, and circuit in patent application abstracts.
Patent Applications by SAMSUNG ELECTRONICS CO., LTD.
Inventor(s): Jongsoo HONG of Suwon-si (KR) for samsung electronics co., ltd., Jeehoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Chunseong KIM of Suwon-si (KR) for samsung electronics co., ltd., Byoungwoo KO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A47L11/40, A47L11/282
Abstract: a cleaner including a wet cloth brush to which a pad is installable so as to be below a bottom surface of the wet cloth brush, the wet cloth brush including a pad motor configured to rotate a pad installed to the wet cloth brush, a water supplier configured to spray water to a surface to be cleaned, a light source configured to irradiate light to the pad installed to the wet cloth brush, and a processor configured to, based on an intensity of the light reflected from the pad, control a rotation speed of the pad motor, and/or control an amount of water sprayed by the water supplier to the surface to be cleaned.
Inventor(s): Jeongsik IN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A63F13/77, G06F9/50
Abstract: an electronic device according to an embodiment includes: a scaling server configured to execute a first event occurring in a first region allocated a plurality of cells, at least one game server configured to execute a second event occurring in at least one second region adjacent to the first region, and at least one processor configured to process the scaling server and the at least one game server. the at least one processor configured to control at least one of the scaling server or the at least one game server so that at least one cell is transferred between the first region and the second region, based on a first load by the first event and a second load by the second event.
Inventor(s): Shailabh Kumar of Pasadena CA (US) for samsung electronics co., ltd., Haeri Park Hanania of San Gabriel CA (US) for samsung electronics co., ltd., Radwanul Hasan Siddique of Monrovia CA (US) for samsung electronics co., ltd.
IPC Code(s): B01L3/00, G02B6/42
Abstract: a plasmonic device including a support layer extending along a first direction and a second direction, an insulating layer on the support layer, and a plasmonic layer on the insulating layer and defining a cavity extending along the first direction, the cavity having a three-dimensionally (3d) tapered structure and being configured to propagate an electromagnetic field along the first direction and to concentrate the electromagnetic field at a tip of the cavity, wherein the support layer, the insulating layer, and the plasmonic layer define an opening therein, the opening being at the tip of the cavity and being configured to pass-through target molecules of a solution present on the plasmonic layer.
20240131563.Preventing Sensor Contamination_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yufeng Wu of Mountain View CA (US) for samsung electronics co., ltd., Nigel Clarke of Mountain View CA (US) for samsung electronics co., ltd., Brian Patton of San Francisco CA (US) for samsung electronics co., ltd., Pedro Martinez Lopez of Mountain View CA (US) for samsung electronics co., ltd., Forrest Gia-Bao Tran of Milpitas CA (US) for samsung electronics co., ltd.
IPC Code(s): B08B5/02, B08B13/00, B08B17/02, G01J5/00
Abstract: in one embodiment, a system includes a sensor and an airflow generator coupled to an airflow guide configured to direct airflow from the airflow generator toward and past the sensor. the system includes one or more processors and a non-transitory computer readable storage media embodying instructions coupled to the one or more processors, the one or more processors operable to execute the instructions to acquire data about an operational state of the system, wherein the operational state is related to at least one air contaminant generated by the system; and to control the airflow from the airflow generator based on the data about the operational state of the system.
[[20240132834.RECOMBINANT MICROORGANISM INCLUDING GENETIC MODIFICATION THAT INCREASES EXPRESSION OF IRON STORAGE PROTEIN WITH HEME STRUCTURE, AND METHOD OF REDUCING CONCENTRATION OF NITROGEN OXIDE IN SAMPLE USING THE SAME_simplified_abstract_(samsung electronics co., ltd.)]]
Inventor(s): Yu Kyung Jung of Suwon-si (KR) for samsung electronics co., ltd., Jae-Young Kim of Suwon-si (KR) for samsung electronics co., ltd., Seung Hoon Song of Suwon-si (KR) for samsung electronics co., ltd., Woo Yong Shim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C12N1/20, C07K14/195
Abstract: provided are a recombinant microorganisms having a genetic modification that increases the expression of bacterioferritin, a composition comprising the recombinant microorganism for use in reducing a nitrogen oxide concentration in a sample, and a method of reducing a nitrogen oxide concentration in a sample.
Inventor(s): Yoonhee CHOI of Suwon-si (KR) for samsung electronics co., ltd., Seongjoo HAN of Suwon-si (KR) for samsung electronics co., ltd., Keehwan KA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): D06F34/18, D06F33/32, H04N23/61
Abstract: an electronic device and a control method thereof are provided. the electronic device includes a communication interface and at least one processor. the at least one processor obtains identification information of an object. the at least one processor controls the communication information to receive operation-related information of a household appliance. the at least one processor maps setting information selected from among the obtained operation-related information of the household appliance to the obtained identification information of the object.
Inventor(s): Atsushi OHYAGI of Yokohama (JP) for samsung electronics co., ltd., Hitoshi MINAI of Yokohama (JP) for samsung electronics co., ltd., Takashi ANDO of Yokohama (JP) for samsung electronics co., ltd., Tomoyuki OKUNO of Yokohama (JP) for samsung electronics co., ltd., Yasushi URAI of Yokohama (JP) for samsung electronics co., ltd.
IPC Code(s): D06F39/00, C02F1/42, D06F23/02, D06F34/22, D06F39/02, D06F39/12
Abstract: a disclosed drum-type washing machine having a softening apparatus comprises: a cylindrical water tank accommodating laundry and having a rotating drum; a case for accommodating the water tank; and a softening apparatus having a hardness component remover for removing hardness components from washing water, and a regeneration agent accommodation unit spaced apart from the hardness component remover on opposite sides from a center of the tub, and for accommodating a regeneration agent that regenerates a function of the hardness component remover.
Inventor(s): Dongpil SEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): D06F58/10, D06F58/04, D06F58/22
Abstract: provided is a flow path switching unit of a dryer configured to dry a drying material. the flow path switching unit includes a body portion, and a flow path guide dividing an internal space of the body portion to selectively form one of a first flow path of air for drying the drying material and a second flow path of air for dehumidifying outside air, according to an arrangement position of the body portion, and at a first position, the path switching unit provides the first flow path to guide air from a drum of the dryer toward a heat exchanger of the dryer, and at a second position, the path switching unit provides the second flow path to guide the outside air introduced from an outside of the dryer.
20240133559.COOKING APPLIANCE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jaehee JO of Suwon-si (KR) for samsung electronics co., ltd., Sangwon YUN of Suwon-si (KR) for samsung electronics co., ltd., Myoungkeun KWON of Suwon-si (KR) for samsung electronics co., ltd., Sangjin KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeokkyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Changhyun SON of Suwon-si (KR) for samsung electronics co., ltd., Sungmin OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F24C15/00, F21V29/67, G03B17/55, H05K7/20
Abstract: provided is a cooking appliance including: a main body including a cooking chamber, a door positioned at a front of the main body to open and close the cooking chamber, a camera disposed toward the cooking chamber to obtain a photograph an inside of the cooking chamber, a camera cooling fan configured to intake external air to cool the camera, and an air guide configured to form a flow path such that external air is provided toward the camera by the camera cooling fan. the air guide guides air passed through the camera to be discharged toward a front of the camera cooling fan.
20240133673.SEMICONDUCTOR MEASUREMENT APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Garam CHOI of Suwon-si (KR) for samsung electronics co., ltd., Wookrae KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinseob KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinyong KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungho JANG of Suwon-si (KR) for samsung electronics co., ltd., Younguk JIN of Suwon-si (KR) for samsung electronics co., ltd., Daehoon HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01B9/02, G01B9/02097
Abstract: a semiconductor measurement apparatus may include an illumination unit configured to irradiate light to the sample, an image sensor configured to receive light reflected from the sample and output multiple interference images representing interference patterns of polarization components of light, an optical unit in a path through which the image sensor receives light and including an objective lens above the sample, and a control unit configured to obtain, by processing the multi-interference image, measurement parameters determined from the polarization components at each of a plurality of azimuth angles defined on a plane perpendicular to a path of light incident to the image sensor. the control unit may be configured to determine a selected critical dimension to be measured from a structure in the sample based on measurement parameters. the illumination unit and/or the optical unit may include a polarizer and a compensator having a � wave plate.
Inventor(s): Inho KWAK of Suwon-si (KR) for samsung electronics co., ltd., Jinsun KIM of Suwon-si (KR) for samsung electronics co., ltd., Moosong LEE of Suwon-si (KR) for samsung electronics co., ltd., Seungyoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Jeongjin LEE of Suwon-si (KR) for samsung electronics co., ltd., Chan HWANG of Suwon-si (KR) for samsung electronics co., ltd., Dohyeon PARK of Suwon-si (KR) for samsung electronics co., ltd., Yeeun HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01B15/00
Abstract: in an overlay measurement method, an overlay mark having programmed overlay values is provided. the overlay mark is scanned with an electron beam to obtain a voltage contrast image. a defect function that changes according to the overlay value is obtained from voltage contrast image data. self-cross correlation is performed on the defect function to determine an overlay.
Inventor(s): Younghwa JUNG of Suwon-si (KR) for samsung electronics co., ltd., Seho SHIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01C21/20
Abstract: a processor-implemented method includes: generating initial information comprising any one or any combination of any two or more of map information, departure information, and arrival information; generating a plurality of paths by inputting the initial information to a planner ensemble; and training a path distribution estimation model to output a path distribution corresponding to the plurality of paths.
Inventor(s): Gyubaek Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01Q80/00, G01Q60/24
Abstract: the inventive concept provides a method of removing and collecting particles from a photomask including fabricating the photomask on a substrate, generating a first map indicating locations of particles on a surface of the photomask by inspecting the surface of the photomask using a probe tip, vertically moving the probe tip to a first vertical height that is lower than a height of the particle, horizontally moving the probe tip parallel to the surface of the photomask at the first vertical height, generating a second map indicating locations of particles on the surface of the photomask using the probe tip, vertically moving the probe tip to a second vertical height that is lower than the first vertical height, and horizontally moving the probe tip parallel to the surface of the photomask at the second vertical height.
Inventor(s): Ju Wan LIM of Suwon-si (KR) for samsung electronics co., ltd., Jinho KIM of Suwon-si (KR) for samsung electronics co., ltd., Tae Won SONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01R31/374, G01R31/367, G01R31/388
Abstract: a method for adjusting a current of a battery includes obtaining one or more parameters of a battery including the current of the battery, a voltage and a temperature of the battery, determining a first correction parameter relating to a variation in current due to charging and discharging of the battery, based on at least a portion of the one or more parameters, determining a difference between an electrolyte concentration of an anode surface and an electrolyte concentration of a cathode surface of the battery, based on at least a portion of the one or more parameters, determining a temperature parameter based on the temperature of the battery, determining a second correction parameter relating to a temperature of the battery, based on the difference and the temperature parameter, and determining a correction value for the current of the battery based on the first correction parameter and the second correction parameter.
Inventor(s): Sivagaminathan BALASUBRAMANIAN of Bengaluru (IN) for samsung electronics co., ltd., Jinho KIM of Suwon-si (KR) for samsung electronics co., ltd., Myeongjae LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01R31/392, G01R31/36, G01R31/367, G01R31/3835
Abstract: a method of estimating a short circuit resistance in a battery using open cell voltage (ocv) includes: determining a rest period ocv for a rest period of the battery; determining a no-short ocv of a no-short condition based on a predetermined parameter, a first state-of-health (soh) parameter, and a first temperature of the battery; determining that an internal short is present in the battery based on the no-short ocv and the rest period ocv, and based thereon extending the rest period of the battery; determining an extended ocv of the battery for the extended rest period based on the predetermined parameter, a second soh parameter, and a second temperature of the battery; and estimating the short circuit resistance based on the no-short ocv, the predetermined parameter, and the extended ocv.
Inventor(s): Debo SUN of Milpitas CA (US) for samsung electronics co., ltd., William Bradley STEWART of Monte Sereno CA (US) for samsung electronics co., ltd.
IPC Code(s): G01S19/19, G01S19/39, G01S19/52
Abstract: a system and a method are disclosed for tracking a position of a body. the system and method including the steps of receiving combined movement data, the combined movement data including first movement data of the body and second movement data of an object connected to the body, wherein the second movement data is data of a movement occurring relative to the body; transforming the first movement data using a first transformation technique; transforming the second movement data using a second transformation technique that is different than the first transformation technique; determining a velocity estimation bias of the body based on a combination of the transformed first movement data and the transformed second movement data; and generating a velocity estimation of the body with the determined velocity estimation bias of the body.
Inventor(s): Sanghun LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaewon BANG of Suwon-si (KR) for samsung electronics co., ltd., Donghyun YEOM of Suwon-si (KR) for samsung electronics co., ltd., Moonsoo CHANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02B27/01, G06V10/764, G06V20/40, H04N23/667
Abstract: a processor of a wearable device may display, based on identifying a location in a first area based on data of a sensor, a visual object. the processor may be configured to adjust, based on an input indicating selection of the visual object, the state of the camera to a first state for recording media. the processor may be configured to identify whether the location of the wearable device moves to a second area in the first area. the processor may be configured to obtain, based on identifying that the location of the wearable device moves into the second area, media based on the camera of the first state. the present disclosure relates to a metaverse service for enhancing interconnectivity between a real-world object and a virtual object, and the metaverse service may be provided over a network based on 5generation (5g) and/or 6generation (6g) communication systems.
Inventor(s): Inbeom Yim of Suwon-si (KR) for samsung electronics co., ltd., Junseong Yoon of Suwon-si (KR) for samsung electronics co., ltd., Seungyoon Lee of Suwon-si (KR) for samsung electronics co., ltd., Jeongjin Lee of Suwon-si (KR) for samsung electronics co., ltd., Chan Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/20, G03F7/00, H01L21/66
Abstract: provided are a method of selecting multi-wavelengths for overlay measurement, for accurately measuring overlay, and an overlay measurement method and a semiconductor device manufacturing method using the multi-wavelengths. the method of selecting multi-wavelengths for overlay measurement includes measuring an overlay at multiple positions on a wafer at each of a plurality of wavelengths within a set first wavelength range, selecting representative wavelengths that simulate the overlay of the plurality of wavelengths, from among the plurality of wavelengths, and allocating weights to the representative wavelengths, respectively.
20240134380.ROBOT AND CONTROL METHOD THEREOF_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Dongeui SHIN of Suwon-si (KR) for samsung electronics co., ltd., Daehwan JUNG of Suwon-s (KR) for samsung electronics co., ltd., Minsu HWANGBO of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G05D1/02
Abstract: a robot, includes: a driver; a plurality of sensors; a memory; and at least one processor configured to transmit a first signal for identifying a presence or absence of an object within a sensing area of the plurality of sensors through a first sensor operating in the signal transmitting mode from among the plurality of sensors during a first time period, identify, a second sensor to transmit a second signal during a third time period after elapse of the second time period from among the plurality of sensors, transmit the second signal by operating the identified second sensor in the signal transmitting mode, identify a location of the object based on whether a second reflection signal corresponding to the second signal is received at the second sensor, and control the driver to travel by avoiding the object based on the identified location of the object.
Inventor(s): Hyunki HONG of Suwon-si (KR) for samsung electronics co., ltd., Youngil KOH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G05D1/646, G05D1/243
Abstract: a robot includes: a plurality of wheels; a plurality of motors; at least one sensor; a memory configured to store first information on a size of the robot; and a processor. the processor is configured to: acquire image data of an escalator from the at least one sensor, acquire second information on a size of a plurality of steps included in the escalator based on the image data, based on the first information and the second information, identify both a boarding position available for the robot to board the escalator among the plurality of steps, and a posture of the robot configured to allow the robot to board at the boarding position, acquire control information for controlling the robot to board at the boarding position in the posture when the boarding position and the posture have been identified, and control the plurality of motors based on the control information.
Inventor(s): Myungjune Jung of Suwon-Si (KR) for samsung electronics co., ltd., Euiseong Seo of Seongnam-Si (KR) for samsung electronics co., ltd., Hwaseok Oh of Suwon-Si (KR) for samsung electronics co., ltd., Jooyoung Hwang of Suwon-Si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F1/26
Abstract: a device includes a storage device to receive a first power and transfer data, a computing device to receive a second power and perform computations on the data; a storage power manager to generate a storage power demand value from previous operation of the storage device; a computing power manager to generate a computing power demand value from previous operation of the computing device; and a global power manager to generate a storage target power value indicating a next power limit for the storage device and a computing target power value indicating a next power limit for the computing device, from both of the storage and computing power demand values, wherein the storage power manager provides the first power to the storage device based on the storage target power value, and the computing power manager provides the second power to the computing device based on the computing target power value.
Inventor(s): JAEWOONG CHOI of SUWON-SI (KR) for samsung electronics co., ltd., DONGYOUNG LEE of SUWON-SI (KR) for samsung electronics co., ltd., DASOL PARK of SUWON-SI (KR) for samsung electronics co., ltd., JINSOO BAE of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
Abstract: a storage device may include a memory, a humidity sensor that collects humidity information of the storage device, and a storage controller that performs a heating operation set to increase a temperature of the storage device through the memory if a humidity value of the humidity information exceeds a reference humidity value.
Inventor(s): SEONGWOOK PARK of Suwon-si (KR) for samsung electronics co., ltd., DEOK JAE OH of Suwon-si (KR) for samsung electronics co., ltd., YOUNGSAM SHIN of Suwon-si (KR) for samsung electronics co., ltd., YEONGON CHO of Suwon-si (KR) for samsung electronics co., ltd., YONGMIN TAI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
Abstract: a near-memory processing unit is configured to compress a page present in a normal memory space of a memory when receiving a swap-out command from a host, allocate a memory area in which the compressed page is to be stored in a compressed memory space which is a memory area previously allocated by the host, copy the compressed page into the allocated memory area, generate an entry corresponding to the compressed page, and insert the generated entry into an entry tree.
Inventor(s): Madhava Krishnan RAMANATHAN of Blacksburg VA (US) for samsung electronics co., ltd., Naga Sanjana BIKONDA of San Jose CA (US) for samsung electronics co., ltd., Shashwat JAIN of Blacksburg VA (US) for samsung electronics co., ltd., Vishwanath MARAM of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
Abstract: a high endurance persistent storage device. in some embodiments, the persistent storage device includes: a controller circuit; persistent storage media, connected to the controller circuit; nonvolatile memory, connected to the controller circuit; and volatile memory, connected to the controller circuit.
Inventor(s): JONG WON LEE of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
Abstract: a method for operating a computational storage device includes receiving by a storage controller and from a host device: (1) a compute namespace setting instruction instructing the setting of a compute namespace; (2) a latency threshold value related to the compute namespace; (3) a program; (4) a first execute command using the program; and (5) a second execute command using the program. additionally, the method includes transmitting, by the storage controller and to the host device, a latency message in response to the second execute command.
Inventor(s): Wooseok YI of Suwon-si (KR) for samsung electronics co., ltd., Soon-Wan KWON of Suwon-si (KR) for samsung electronics co., ltd., Seungchul JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F7/544, G06F7/556
Abstract: a memory device includes: a computing module; and an in-memory computing (imc) macro comprising: a memory comprising a plurality of bit cells storing pieces of fraction data of a first data set; and an imc computing module configured to perform an operation between the pieces of fraction data of the first data set read from the memory and pieces of fraction data of a second data set received from an input control module, wherein a plurality of pieces of data included in the first data set share a first exponent, and wherein a plurality of pieces of data included in the second data set share a second exponent.
Inventor(s): Sungwon JEONG of Suwon-si (KR) for samsung electronics co., ltd., Moonsang KWON of Suwon-si (KR) for samsung electronics co., ltd., Younghoi HEO of Uijeongbu-si (KR) for samsung electronics co., ltd., Jaeshin LEE of Seoul (KR) for samsung electronics co., ltd., Eun JUNG of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/10, G06N20/00
Abstract: a storage device and an operating method thereof are provided. the storage device includes a non-volatile memory and a storage controller. the storage controller includes a command and address generator, an error detection module, and an interface circuit. the command and address generator generates a first command, an address, and a second command, the second command including an error detection signal for detecting a communication error in the first command and the address. the error detection module generates the error detection signal from the first command and the address. the interface circuit sequentially transmits the first command, the address, and the second command to the non-volatile memory. the first command indicates a type of a memory operation to be performed in the non-volatile memory, and the second command corresponds to a confirm command.
Inventor(s): Boram HWANG of Suwon-si (KR) for samsung electronics co., ltd., Chulmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunjoon CHA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/10, G06F11/07
Abstract: according to various embodiments, an electronic device comprises: at least one processor; and memory operatively connected to the at least one processor, wherein the memory may store instructions which, when executed by the at least one processor, cause the electronic device to: obtain, from a kernel, at least one address for a first memory area accessible through the kernel; store the at least one address in a second memory area accessible through a hypervisor; based on obtaining an address stored in a kernel stack from the kernel, identify whether the obtained address is defective, on the basis of the at least one stored address; and restore the defective address using at least one address stored in the second memory area in response to identifying the defect in the address.
Inventor(s): Jihong KIM of Suwon-si (KR) for samsung electronics co., ltd., Yongkoo JEONG of Suwon-si (KR) for samsung electronics co., ltd., Jooyoung KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/10, G06F11/07
Abstract: a storage device includes a non-volatile memory device that includes memory blocks each including one or more memory cells, a combo integrated circuit (ic) that includes a temperature sensor and a memory, and a controller that is connected with the combo ic through first channels and controls the non-volatile memory device to write or read data in or from selected memory cells. when the controller determines that a first event occurs based on temperature data read from the combo ic, the controller records first event data in the memory of the combo ic. in a first operation mode, the combo ic outputs the first event data to the controller through the first channels. in a second operation mode, under control of an external host, the combo ic outputs the first event data to the external host through second channels different from the first channels.
Inventor(s): Jae-Eon Jo of Suwon-si (KR) for samsung electronics co., ltd., Rohyoung Myung of Suwon-si (KR) for samsung electronics co., ltd., Hans Gustav Åhlman of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/36
Abstract: an electronic device includes: one or more processors; a memory storing instructions configured to cause the one or more processors to: install instrumentation points in respective tasks of an application, the instrumentation points including a source instrumentation point installed in a source task and a target instrumentation point installed in a target task, wherein the source task and the target task are configured to execute in parallel on the one or more processors, and wherein each task includes a respective sequence of instructions executable by the one or more processors, and determine a measure of a causal relationship between the source instrumentation point and the target instrumentation point based on observation of a delay in the target instrumentation point induced by a delay amount generated by the source instrumentation point.
Inventor(s): Haitao HU of SHAANXI (CN) for samsung electronics co., ltd., Zhu FU of SHAANXI (CN) for samsung electronics co., ltd., Huan GUO of SHAANXI (CN) for samsung electronics co., ltd., Hao YAN of SHAANXI (CN) for samsung electronics co., ltd., Zhenan TANG of SHAANXI (CN) for samsung electronics co., ltd.
IPC Code(s): G06F11/36
Abstract: a black-box fuzzing testing method includes: generating a plurality of testcases; executing a target program based on each of the generated testcases to obtain a plurality of execution results; determining a plurality of execution paths of the target program using the execution results; and determining a code coverage of the target program from the execution paths.
Inventor(s): Shuyi PEI of Santa Clara CA (US) for samsung electronics co., ltd., Jing YANG of Glen Allen VA (US) for samsung electronics co., ltd., Rekha PITCHUMANI of Oak Hill VA (US) for samsung electronics co., ltd.
IPC Code(s): G06F12/0831, G06F12/0888, G06F12/0891
Abstract: systems and methods for persistent storage with a dual interface. in some embodiments, a persistent storage device includes: a processing circuit; a cache; and persistent storage. the processing circuit may be configured to perform a method, the method including: receiving a first write request according to a first protocol; saving a data payload of the first write request in a first portion of the cache; receiving a second write request according to a second protocol; and saving a data payload of the second write request in a second portion of the cache.
Inventor(s): Marie Mai NGUYEN of Pittsburgh PA (US) for samsung electronics co., ltd., Rekha PITCHUMANI of Oak Hill VA (US) for samsung electronics co., ltd., Yang Seok KI of Palo Alto CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F12/0882, G06F12/02, G06F12/0891
Abstract: methods and memory devices are provided. a request is received from a host device at a memory device in a first state. in case that the request is a read request, first data is read from a cache of the memory device based on the read request, and the first data is output to the host device. the cache is loaded with data with the memory device in a second state. in case that the request is a write request, a block of the cache is modified to remove cache data, the cache data and corresponding data from the cache are written to a flash memory of the memory device, and second data is written to the block of the cache based on the received write request.
Inventor(s): Ilgu HONG of Santa Clara CA (US) for samsung electronics co., ltd., Changho CHOI of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F21/55
Abstract: a computational storage device (csd) and a method thereof are provided. the method includes receiving, from a user device, a computational storage (cs) request, identifying the cs request as an attack, comparing a total attack value of the user device to a threshold, wherein the total attack value is based on a number of attacks received from the user device, and identifying the user device as an attacker based on the comparison.
Inventor(s): Eunsang Jang of Hwaseong-si (KR) for samsung electronics co., ltd., Junho Kim of Seoul (KR) for samsung electronics co., ltd., Inhyuk Kim of Hanam-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06K19/07, G06K19/077, H02M3/335
Abstract: an internal voltage generation circuit of a smart card to perform fingerprint authentication and a smart card includes a first contact switch, a second contact switch, a switched capacitor converter and a bidirectional switched capacitor converter. the first contact switch selectively switches a contact voltage to a first node based on a first switching enable signal, in a contact mode. the second contact switch selectively switches the contact voltage to a second node based on a second switching enable signal, in the contact mode. the bidirectional switched capacitor converter steps down a first driving voltage of the first node to provide a second voltage to the second node in the contactless mode and either steps down the first driving voltage or boosts a second driving voltage of the second node based on a level of the contact voltage to provide a boosted voltage to the first node in the contact mode.
Inventor(s): Jung Ho AHN of Seoul (KR) for samsung electronics co., ltd., Sun Jung LEE of Seoul (KR) for samsung electronics co., ltd., Jae Wan CHOI of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/0455
Abstract: a device including processors configured to execute instructions and memories storing the instructions, which when executed by the processors configure the processors to perform an operation for training a transformer model having a plurality of encoders and a plurality of decoders by configuring the processors to identify the batches of training data into a plurality of micro-batches, select layer pairs for the plurality of micro-batches, assemble a processing order of the layer pairs, determining resource information to be allocated to the layer pairs, and allocate resources to the layer pairs based on the determined resource information to be allocated to the layer pairs, dependent con the processing order of the layer pairs.
Inventor(s): Dohwan LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyuhong KIM of Seoul (KR) for samsung electronics co., ltd., Jaejoon HAN of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/08, G06F18/214, G06F18/23213, G06F18/2413, G06F18/40, G06V10/82, G06V40/16
Abstract: an on-device training-based user recognition method includes performing on-device training on a feature extractor based on reference data corresponding to generalized users and user data, determining a registration feature vector based on an output from the feature extractor in response to the input of the user data, determining a test feature vector based on an output from the feature extractor in response to an input of test data, and performing user recognition on a test user based on a result of comparing the registration feature vector to the test feature vector.
Inventor(s): Gokulkrishna M of Bengaluru (IN) for samsung electronics co., ltd., Siva Kailash SACHITHANANDAM of Bengaluru (IN) for samsung electronics co., ltd., Prasanna R of Bengaluru (IN) for samsung electronics co., ltd., Rajath Elias SOANS of Bengaluru (IN) for samsung electronics co., ltd., Alladi Ashok Kumar SENAPATI of Bengaluru (IN) for samsung electronics co., ltd., Praveen Doreswamy NAIDU of Bengaluru (IN) for samsung electronics co., ltd., Pradeep NELAHONNE SHIVAMURTHAPPA of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): G06N3/08, G06N3/045
Abstract: a method for validating a trained artificial intelligence (ai) model on a device is provided. the method includes deploying a validation model generated by applying a plurality of anticipated configurational changes associated with the trained ai model requiring validation. further, the method includes providing input data to each of the validation model and the trained ai model for receiving an output from each of the validation model and the trained ai model, wherein the output of the validation model is further based on one or more actual configurational deviations that occurred during training of the trained ai model since deployment of the trained ai model on the device. furthermore, the method includes combining the output of each of the validation model and the trained ai model to validate the trained ai model.
Inventor(s): Taegeon UM of Suwon-si (KR) for samsung electronics co., ltd., Minhyeok Kweun of Suwon-si (KR) for samsung electronics co., ltd., Byungsoo Oh of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/091
Abstract: an electronic device and a controlling method of the electronic device are provided. the electronic device includes a communicator; at least one memory configured to store data for a neural network model; at least one first processor configured to perform a training process of the neural network model; and at least one second processor configured to: perform a plurality of preprocessing processes for the training process, determine a first operation speed of at least one preprocessing process of the plurality of preprocessing processes performed by the at least one second processor and a second operation speed of the training process performed by the at least one first processor, based on the first operation speed being slower than the second operation speed, control the communicator to transmit at least one input value for the at least one preprocessing process to an external device connected to the electronic device, and obtain an output value corresponding to the at least one input value by receiving, through the communicator, a processing result of the external device for the at least one input value from the external device.
Inventor(s): Minyoung KIM of Staines (GB) for samsung electronics co., ltd., Timothy HOSPEDALES of Staines (GB) for samsung electronics co., ltd.
IPC Code(s): G06N3/098
Abstract: broadly speaking, embodiments of the present techniques provide a method for training a machine learning, ml, model to update global and local versions of a model. we propose a novel hierarchical bayesian approach to federated learning (fl), where our models reasonably describe the generative process of clients' local data via hierarchical bayesian modeling: constituting random variables of local models for clients that are governed by a higher-level global variate. interestingly, the variational inference in our bayesian model leads to an optimisation problem whose block-coordinate descent solution becomes a distributed algorithm that is separable over clients and allows them not to reveal their own private data at all, thus fully compatible with fl.
Inventor(s): Junsang Yu of Suwon-si (KR) for samsung electronics co., ltd., Kinam Kwon of Suwon-si (KR) for samsung electronics co., ltd., Jaehyoung Yoo of Suwon-si (KR) for samsung electronics co., ltd., Sangwon Lee of Suwon-si (KR) for samsung electronics co., ltd., Hyong Euk Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T5/00, G06T5/50, G06T7/00, G06T7/90
Abstract: a method, implemented by a processor, of correcting lighting of an image includes inputting an input image to a first neural network and generating predicted lighting data corresponding to lighting of the input image and embedding data corresponding to a feature of the input image, inputting the generated predicted lighting data, the generated embedding data, and sensor data to a second neural network and generating a lighting weight corresponding to the input image, and generating correction lighting data for the input image by applying the generated lighting weight to preset basis lighting data corresponding to the input image.
Inventor(s): Taesoo Shin of Suwon-si (KR) for samsung electronics co., ltd., Seulgi Ok of Suwon-si (KR) for samsung electronics co., ltd., Kibum Lee of Suwon-si (KR) for samsung electronics co., ltd., Sungwook Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/00
Abstract: a method of predicting a semiconductor yield includes receiving wafer level data generated by measuring a plurality of wafers, generating a plurality of virtual chips corresponding to the plurality of wafers based on the wafer level data, mapping a test result of the plurality of wafers to the plurality of virtual chips, computing a defect rate of the plurality of virtual chips according to defects based on a result of the mapping, and computing a defect index of the equipment based on the defect rate.
Inventor(s): Fang LIU of Xi'an (CN) for samsung electronics co., ltd., Fengtao XIE of Xi'an (CN) for samsung electronics co., ltd., Fangfang DU of Xi'an (CN) for samsung electronics co., ltd., Ke LU of Xi'an (CN) for samsung electronics co., ltd., Pengfei ZHAO of Xi'an (CN) for samsung electronics co., ltd.
IPC Code(s): G06T7/11, G06V10/764
Abstract: a method and an electronic device with image data generating are disclosed. the electronic device includes: one or more processors; and memory storing instructions configured to cause the one or more processors to: input an input image to a target model that performs segmenting on the input image to generate a segmented image whose pixels have respective class labels predicted by the target model, calculate an optimization value for the input image based on the segmented image and based on a class label of a first grid area among a plurality of grid areas of a guide image, and optimize the input image based on the optimization value.
Inventor(s): Sung Kwang CHO of Suwon-si (KR) for samsung electronics co., ltd., Geonwoo Kim of Suwon-si (KR) for samsung electronics co., ltd., Yang Ho Cho of Suwon-si (KR) for samsung electronics co., ltd., Dong Kyung Nam of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/90
Abstract: a method of learning a parameter of a sensor filter and an apparatus for performing the method are provided. the learning method may include performing a simulation on a target image for each spectrum of a sensor filter, obtaining an output value by inputting the simulated image to a vision model for a vision task, and learning a parameter of the sensor filter based on a loss between a label of the vision model and the output value of the vision model.
Inventor(s): Young Chun AHN of Suwon-si (KR) for samsung electronics co., ltd., Nahyup KANG of Suwon-si (KR) for samsung electronics co., ltd., Seokhwan JANG of Suwon-si (KR) for samsung electronics co., ltd., Jiyeon KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T15/08, G06T3/00, G06T7/194, G06T7/50, G06T15/06
Abstract: a method and apparatus for neural rendering based on view augmentation are provided. a method of training a neural scene representation (nsr) model includes: receiving original training images of a target scene, the original training images respectively corresponding to base views of the target scene; generating augmented images of the target scene by warping the original training images, the augmented images respectively corresponding to new views of the target scene; performing background-foreground segmentation on the original training images and the augmented images to generate segmentation masks; and training a neural scene representation (nsr) model to be configured for volume rendering of the target scene by using the original training images, the augmented images, and the segmentation masks.
Inventor(s): Donghoon SAGONG of Suwon-si (KR) for samsung electronics co., ltd., Nahyup KANG of Suwon-si (KR) for samsung electronics co., ltd., Jiyeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyewon MOON of Suwon-si (KR) for samsung electronics co., ltd., Seokhwan JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T15/20, G06T7/73, G06T15/06
Abstract: a device including a processor configured to generate, for each of plural query inputs, point information using factors individually extracted from a plurality of pieces of factor data for a corresponding query input and generate pixel information of a pixel position using the point information of points, the plural query inputs being of the points, in a 3d space, on a view direction from a viewpoint toward a pixel position of a two-dimensional (2d) scene.
Inventor(s): Hwajun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T19/00, G06F3/01, G06F3/16
Abstract: according to an embodiment, at least one processor of a wearable device may display, based on an input for entering a virtual space, on a display the virtual space. the at least processor may display within the virtual space a first avatar which is a current representation of a user and has a first appearance. the at least processor may display within the virtual space a first avatar together with a visual object for a second avatar which is a previous representation of the user and has a second appearance different from the first appearance of the first avatar. for example, the metaverse service is provided through a network based on 5g (fifth generation), and/or 6g (sixth generation).
Inventor(s): Inwoo HA of Seongnam-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T19/00, G06T15/00, G06T15/60, G06T15/80
Abstract: a method and apparatus for processing augmented reality (ar) including determining a compensation parameter to compensate for light attenuation of visual information caused by a display area of an ar device as the visual information corresponding to a target scene is displayed through the display area, generating a background image without the light attenuation by capturing the target scene using a camera of the ar device, generating a compensation image by reducing brightness of the background image using the compensation parameter, generating a virtual object image to be overlaid on the target scene, generating a display image by synthesizing the compensation image and the virtual object image, and displaying the display image in the display area.
Inventor(s): Yibo Xu of Plano TX (US) for samsung electronics co., ltd., Weidi Liu of Houston TX (US) for samsung electronics co., ltd., Hamid R. Sheikh of Allen TX (US) for samsung electronics co., ltd., John Seokjun Lee of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): G06V10/70, G06T5/00, G06V10/60
Abstract: a method includes obtaining an under-display camera (udc) image captured using a camera located under a display. the method also includes processing, using at least one processing device of an electronic device, the udc image based on a machine learning model to restore the udc image. the method further includes displaying or storing the restored image corresponding to the udc image. the machine learning model is trained using (i) a ground truth image and (ii) a synthetic image generated using the ground truth image and a point spread function that is based on an optical transmission model of the display.
Inventor(s): Chan-Hyun Youn of Daejeon (KR) for samsung electronics co., ltd., Taewoo Kim of Daejeon (KR) for samsung electronics co., ltd., Changha Lee of Daejeon (KR) for samsung electronics co., ltd., Minsu Jeon of Daejeon (KR) for samsung electronics co., ltd.
IPC Code(s): G06V10/771, G06V10/764, G06V20/13
Abstract: an electronic device includes a memory configured to store at least one instruction; and at least one processor configured to execute the at least one instruction to: input first data to a first artificial intelligence model including a plurality of convolution blocks sequentially connected with a pooling layer interposed therebetween to obtain a plurality of feature maps that are output by corresponding ones of the plurality of convolution blocks, input the first data and the plurality of feature maps to a second artificial intelligence model including a plurality of local attention blocks sequentially connected to obtain a plurality of attention maps that are output by corresponding ones of the plurality of local attention blocks, output an amplified feature map by amplifying a region corresponding to a last attention map among the plurality of attention maps in a last feature map among the plurality of feature maps, and input the amplified feature map to a classifier to output a classification result for the first data.
Inventor(s): Jaeyong Ju of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V10/774, G06T7/80, G06V10/82, G06V20/70, H04N23/90
Abstract: provided is a computer-implemented method of training a neural network model by augmenting images representing objects. the method includes: obtaining a first object recognition result predicted by a first neural network model using, as an input, a first image captured by a first camera capturing, from a first viewpoint, a space including at least one object; converting the obtained first object recognition result, based on a conversion relationship between a first camera coordinate system corresponding to the first camera and a second camera coordinate system corresponding to a second camera capturing, from a second viewpoint, the space; generating, based on the first object recognition result converted with respect to the second viewpoint, training data by performing labeling on a second image that corresponds to the first image, the second image being captured by the second camera; and training a second neural network model by using the generated training data.
Inventor(s): Ilhyun CHO of Suwon-si (KR) for samsung electronics co., ltd., Wookhyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jayoon KOO of Suwon-si (KR) for samsung electronics co., ltd., Namuk KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V10/82, G06T3/40
Abstract: an electronic apparatus includes a memory configured to store a neural network model including a first network and a second network. the electronic apparatus also includes at least one processor connected to the memory. the at least one processor is configured to obtain description information corresponding to a first image by inputting the first image to the first network, obtain a second image based on the description information, obtain a third image representing a region of interest of the first image by inputting the first image and the second image to the second network. the neural network model is a model trained based on a plurality of sample images, a plurality of sample description information corresponding to the plurality of sample images, and a sample region of interest of the plurality of sample images.
Inventor(s): Jaeeun KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungyong JOO of Suwon-si (KR) for samsung electronics co., ltd., Jiwon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/00, G09G5/10
Abstract: a display device according to an embodiment includes a display, a first power module that outputs a first power, and a second power module that outputs a second power. the first power and the second power are supplied to the display. the first power module is configured to cut off the first power when an amount of input current exceeds an overload criterion, to identify whether the second power module is abnormal based on the second power, and to change the overload criterion from a first threshold current amount to a second threshold current amount that exceeds the first threshold current amount, in an abnormal state of the second power module
Inventor(s): Ying-Da Chang of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Chulho Choi of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Yu-Chieh Huang of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Ching-Chieh Wu of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Hajoon Shin of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Zhen-Guo Ding of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Jia-Way Chen of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Kyunlyeol Lee of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Yongjoo Song of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/20
Abstract: a gamma tap circuit includes: (i) a first gamma division circuit configured to generate a first gamma tap voltage by performing voltage division of an upper gamma tap voltage and a lower gamma tap voltage, in-sync with a first clock signal ck and a first complementary clock signal ck, which is 180� out-of-phase relative to ck, (ii) a second gamma division circuit configured to generate a second gamma tap voltage by performing voltage division of the upper gamma tap voltage and the first gamma tap voltage, in-sync with a second clock signal ck and a second complementary clock signal ck, which is 180� out-of-phase relative to ck, and (iii) a third gamma division circuit configured to generate a third gamma tap voltage by performing voltage division of the first gamma tap voltage and the lower gamma tap voltage, in response to ck and ck, which have a lower frequency relative to ck and ck
Inventor(s): Hangseok CHOI of Suwon-si (KR) for samsung electronics co., ltd., Sangwoo KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/3225
Abstract: an example electronic device including a power supply circuit may include a battery; a display module including a display panel; a regulator; a power supply circuit configured to: based on an input voltage of the battery, provide a first voltage and a second voltage to the display module, and provide a third voltage to the regulator; and a switch control circuit configured to: control a switching operation of the power supply circuit, wherein the power supply circuit includes: a first power circuit and a second power circuit, wherein the first power circuit includes multiple switch elements, a first capacitor, a second capacitor, a third capacitor, and a first inductor, and is configured to: for a first time interval, based on a drive signal of the switch control circuit, charge the first capacitor and the second capacitor, based on a current of the first inductor and discharge the third capacitor to provide a first output current to the display module, and for a second time interval, based on a drive signal of the switch control circuit, charge the third capacitor and discharge the first capacitor and the second capacitor to provide the first output current and a second output current to the display module, and wherein the second power circuit is configured to: convert a voltage level of the input voltage of the battery to provide a second voltage to the display module.
Inventor(s): Gilho Lee of Suwon-si (KR) for samsung electronics co., ltd., Gajin Song of Suwon-si (KR) for samsung electronics co., ltd., Hoseon Shin of Suwon-si (KR) for samsung electronics co., ltd., Jungin Lee of Suwon-si (KR) for samsung electronics co., ltd., Seokyeong Jeong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/22, G06F40/279, G10L15/26
Abstract: an electronic device according to an embodiment may include a microphone, a memory, and at least one processor(s). according to an embodiment, the at least one processor may be configured to acquire speech data corresponding to a user's speech via the microphone. the at least one processor according to an embodiment may be configured to acquire first text recognized on speech data by at least partially performing automatic speech recognition and/or natural language understanding. the at least one processor according to an embodiment may be configured to identify, based on the first text, second text stored in the memory. the at least one processor according to an embodiment may be configured to control to output the first text or the second text as a speech recognition result of the speech data, based on a difference between the first text and the second text. the at least one processor according to an embodiment may be configured to acquire training data for recognition of the user's speech, based on relevance between the first text and the second text with respect to the speech data.
Inventor(s): Kyunghak HYUN of Suwon-si (KR) for samsung electronics co., ltd., Kyungtae KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/22, G02B27/01, G06F3/01, G06F3/04817, G06F3/0488
Abstract: an electronic device is provided. the electronic device includes a microphone. the electronic device includes a display. the electronic device includes a processor. the processor is configured to display, via the display, a screen including a plurality of executable objects. the processor is configured to enable the microphone for the executable object based on an executable object focused on among the plurality of executable objects, and display at least one visual object indicating that the microphone is enabled for receiving an input on the executable object among the plurality of executable objects, via the display. the processor is configured to identify whether a voice signal obtained via the microphone while the at least one visual object is displayed corresponds to a voice command allocated to the executable object. the processor is configured to execute a function of the executable object associated with the voice command, based on the voice signal corresponding to the voice command.
Inventor(s): HOON SHIN of Suwon-si (KR) for samsung electronics co., ltd., JAEWOOK LEE of Seoul (KR) for samsung electronics co., ltd., DONGHWEE KIM of Suwon-si (KR) for samsung electronics co., ltd., RIHAE PARK of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G11C7/12, G11C7/08, G11C7/10, G11C7/14
Abstract: a memory device and an operating method of a memory controller are described in which the operating method includes determining that a not operation for data of a cell is to be performed by the memory device; forming, in a bit line connected to the cell, a reference voltage between a first voltage corresponding to the data and a second voltage corresponding to inversion data of the data; forming, in the bit line, a third voltage between the second voltage and the reference voltage by connecting the bit line and a bit line bar; forming the reference voltage in the bit line bar; and sensing the inversion data based on the third voltage formed in the bit line and the reference voltage formed in the bit line bar, wherein the inversion data comprises an output of the not operation for the data of the cell.
Inventor(s): Myungkyu Lee of Suwon-si (KR) for samsung electronics co., ltd., Eunae Lee of Suwon-si (KR) for samsung electronics co., ltd., Sunghye Cho of Suwon-si (KR) for samsung electronics co., ltd., Kyomin Sohn of Suwon-si (KR) for samsung electronics co., ltd., Kijun Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/406, G06F12/02
Abstract: a semiconductor memory device includes a memory cell array with a plurality of rows of memory cells therein, and a row hammer management (rhm) circuit including a hammer address queue. the rhm circuit is configured to: (i) receive first access row addresses from an external memory controller during a reference time interval, (ii) store a first row address randomly selected from the first access row addresses and second row addresses consecutively received from the memory controller after selecting the first row address, in the hammer address queue as candidate hammer addresses, and (iii) sequentially output the candidate hammer addresses as a hammer address. a refresh control circuit is provided to receive the hammer address and to perform a hammer refresh operation on one or more victim memory cell rows, which are physically adjacent to a memory cell row corresponding to the hammer address.
Inventor(s): Jongpil Son of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/406, G11C11/408
Abstract: disclosed is a semiconductor memory device that includes a memory cell array including a plurality of memory banks, a command decoder configured to decode a per-bank refresh command and a remaining bank refresh command received from an external source, and a refresh controller configured to control the cell array to perform a per-bank refresh operation for refreshing one memory bank among the plurality of memory banks that is based on a decoding result of the per-bank refresh command of the command decoder, wherein the refresh controller is configured to perform a remaining bank refresh operation for refreshing remaining memory banks other than the one memory bank among the plurality of memory banks, in response to the remaining bank refresh command during one refresh cycle.
Inventor(s): Seunghwan Hong of Suwon-si (KR) for samsung electronics co., ltd., Jang-Woo Ryu of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4076, G06F1/12, G11C11/408, H03K3/037, H03K19/20
Abstract: a semiconductor device includes a chip select signal flip-flop configured to: latch a chip select signal in-sync with a first propagation clock signal, and output a first chip select enable signal, and latch the chip select signal in-sync with a second propagation clock signal having a phase opposite to a phase of the first propagation clock signal, and output a second chip select enable signal; and a clock control circuit configured to generate the first propagation clock signal and the second propagation clock signal based on a clock signal, and selectively output one of the first propagation clock signal and the second propagation clock signal based on an enable level of the first chip select enable signal and an enable level of the second chip select enable signal.
Inventor(s): DONGGEON KIM of Suwon-si (KR) for samsung electronics co., ltd., BOK-YEON WON of Suwon-si (KR) for samsung electronics co., ltd., SELYUNG YOON of Suwon-si (KR) for samsung electronics co., ltd., JONGHYUK KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4091, G11C11/4094, G11C11/4096
Abstract: a bit line sense amplifier of a semiconductor memory device includes: sense amplifier blocks including a pmos driver or an nmos driver that detects and amplifies a signal difference between a bit line and a complimentary bit line, and sequentially arranged in a bit line extending direction; column selection units that connect the bit line and a local input/output line according to a first column selection signal; complimentary column selection units that connect the complimentary bit line and a complimentary local input/output line according to a second column selection signal; column selection lines that transmit the first column selection signal to each of the column selection units; and complimentary column selection lines that transmit the second column selection signal to each of the complimentary column selection units. the column selection units and the complimentary column selection units may be disposed to be distributed between the sense amplifier blocks.
Inventor(s): Lun YAO of Xi'an (CN) for samsung electronics co., ltd., Jiali PANG of Xi’an (CN) for samsung electronics co., ltd., Ihor VASYLTSOV of Suwon-si (KR) for samsung electronics co., ltd., Gang SUN of Xi’an (CN) for samsung electronics co., ltd., Zhen ZHANG of Xi’an (CN) for samsung electronics co., ltd.
IPC Code(s): G16C10/00
Abstract: a processor-implemented method with molecular dynamics simulation includes: setting a precision of first data used for a molecular dynamics simulation to be a first precision; setting a precision of second data used for the molecular dynamics simulation to be a second precision that is different from the first precision; and conducting the molecular dynamics simulation based on the first data of the first precision and the second data of the second precision.
Inventor(s): Changho KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeongmo KANG of Suwon-si (KR) for samsung electronics co., ltd., Illsang KO of Suwon-si (KR) for samsung electronics co., ltd., Dooyoung GWAK of Suwon-si (KR) for samsung electronics co., ltd., Kyungsun KIM of Suwon-si (KR) for samsung electronics co., ltd., Namkyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Yirop KIM of Suwon-si (KR) for samsung electronics co., ltd., Jihwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungbo SHIM of Suwon-si (KR) for samsung electronics co., ltd., Minyoung HUR of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01J37/32
Abstract: provided is a plasma control method including applying gas to a chamber having a wafer loaded therein, generating plasma by applying both radio frequency (rf) power associated with a first voltage at a first frequency and a second voltage at a second frequency that is lower than the first frequency to the chamber for a first time, cutting off the rf power after the first time elapses, continuously applying the second voltage of the second frequency to the chamber for a second time, cutting off the second voltage after the second time elapses, continuously maintaining an off state of the rf power and an off state of the voltage for a third time, and performing an etching process on the wafer by using the plasma formed by the rf power and the second voltage after the third time elapses, wherein the rf power is a sine wave, and the second voltage is a square wave of a periodic pulse form.
Inventor(s): Yuseon HEO of Suwon-si (KR) for samsung electronics co., ltd., Junhyeong Park of Suwon-si (KR) for samsung electronics co., ltd., Jieun Park of Suwon-si (KR) for samsung electronics co., ltd., Jihye Shim of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/48, H01L23/31, H01L23/498, H01L25/18, H10B80/00
Abstract: provided is a method of manufacturing a semiconductor package, the method including forming a first wiring structure, coating a high transmittance photoresist on the first wiring structure a plurality of number of times, forming a plurality of openings by exposing and developing the high transmittance photoresist, forming a plurality of conductive posts by filling the plurality of openings with a conductive material, removing the high transmittance photoresist, disposing a semiconductor chip on the first wiring structure, forming an encapsulant surrounding the semiconductor chip and the plurality of conductive posts, and forming a second wiring structure on the encapsulant, wherein the light transmittance of the high transmittance photoresist at a portion where the first wiring structure and the high transmittance photoresist contact each other is greater than or equal to 3.2%.
20240136216.WAFER PROCESSING APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Youngho Hwang of Suwon-si (KR) for samsung electronics co., ltd., Sanghyun Lim of Suwon-si (KR) for samsung electronics co., ltd., Jaehong Lim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/683, H01L21/67, H01L21/687
Abstract: provided is a wafer processing apparatus including a plate having a plurality of support pins configured such that a wafer is mounted on the plurality of support pins and a plurality of vacuum ports positioned between the plurality of support pins, a heater configured to heat the plate, a flow regulator configured to provide a vacuum pressure for fixing the wafer to the plurality of vacuum ports, and configured to adjust a flow rate of a fluid flowing into the plurality of vacuum ports to be a target flow rate, and a chuck controller configured to control the target flow of the fluid set in the flow regulator, wherein the chuck controller is configured to generate a flow control signal for reducing the target flow rate of the fluid and send the flow control signal to the flow regulator during a heating process of the wafer.
Inventor(s): Keetae KIM of Suwon-si (KR) for samsung electronics co., ltd., Seulgi YUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/8234, H01L29/40
Abstract: a method of manufacturing a semiconductor device includes forming a gate insulation layer on a substrate having first and second regions. a first gate electrode layer is formed on the gate insulation layer in the first and second regions. a first sacrificial layer pattern is formed on the first gate electrode layer in the second region. a second gate electrode layer is formed on the first gate electrode layer in the first region and the first sacrificial layer pattern in the second region. the second gate electrode layer and the first sacrificial layer pattern in the second region are removed to form a first gate electrode including the gate insulation layer, the first gate electrode layer and the second gate electrode layers stacked on each other in the first region, and a second gate electrode including the first gate electrode layer on the gate insulation layer in the second region.
Inventor(s): Donggap SHIN of Suwon-si (KR) for samsung electronics co., ltd., Yongin LEE of Suwon-si (KR) for samsung electronics co., ltd., Wooyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Bumki MOON of Suwon-si (KR) for samsung electronics co., ltd., Jiwon MOON of Suwon-si (KR) for samsung electronics co., ltd., Seungdae SEOK of Suwon-si (KR) for samsung electronics co., ltd., Siwoong WOO of Suwon-si (KR) for samsung electronics co., ltd., Byeongtak PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, H01L23/00
Abstract: an apparatus for measuring an adhesion force, the apparatus comprising a stage configured to support a specimen, and a sensor adhered to the specimen, wherein the sensor detects the adhesion force of the specimen, the adhesion force of the specimen being a force for detaching the sensor from the specimen.
Inventor(s): Inkeun BAEK of Suwon-si (KR) for samsung electronics co., ltd., Suhwan PARK of Suwon-si (KR) for samsung electronics co., ltd., Ikseon JEON of Suwon-si (KR) for samsung electronics co., ltd., Namil KOO of Suwon-si (KR) for samsung electronics co., ltd., Ingi KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaeho KIM of Suwon-si (KR) for samsung electronics co., ltd., Junbum PARK of Suwon-si (KR) for samsung electronics co., ltd., Sunhong JUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, G01N21/95
Abstract: provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer, and a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves to obtain data including information about the first electromagnetic wave and the second electromagnetic wave, and separating a first pulse of the first electromagnetic wave and a second pulse of the second electromagnetic wave from each other in the data and obtaining property data of the target layer.
Inventor(s): Mingyoo CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jinsun Kim of Suwon-si (KR) for samsung electronics co., ltd., Seunghak Park of Suwon-si (KR) for samsung electronics co., ltd., Jongsu Park of Suwon-si (KR) for samsung electronics co., ltd., Sunkak Jo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, H01L21/311
Abstract: a method of measuring an overlay offset, the method includes: providing a substrate including a lower pattern and an upper pattern, wherein the lower pattern is disposed in a cell area, and the upper pattern is disposed on the lower pattern; acquiring a first piece of overlay information about a first position of the lower pattern and a second position of the upper pattern by detecting a pupil image of a joint position that is between the upper pattern and the lower pattern; detecting an overlay offset of the second position of the upper pattern relative to the first position of the lower pattern through zernike polynomial modeling; and acquiring compensation overlay information on the upper pattern from the overlay offset of the second position, wherein the overlay offset includes a radial tilting component.
Inventor(s): Changui Hong of Suwon-si (KR) for samsung electronics co., ltd., Minho Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, G01R31/52, G01R31/64, H01L23/498
Abstract: a substrate includes a first input/output region; a first input pad provided in the first input/output region; a first output pad provided in the first input/output region; a first mounting region; a first positive pad provided in the first mounting region and connected to the first input pad; a first negative pad provided in the first mounting region connected to the first output pad; a second positive pad provided in the first mounting region; a second negative pad provided in the first mounting region; a second mounting region; a third positive pad provided in the second mounting region and connected to the second positive pad; a third negative pad provided in the second mounting region and connected to the second negative pad; a fourth positive pad provided in the second mounting region; a fourth negative pad provided in the second mounting region; a second input/output region; a second input pad provided in the second input/output region and connected to the fourth positive pad; and a second output pad provided in the second input/output region and connected to the fourth negative pad.
Inventor(s): Yeonho Jang of Suwon-si (KR) for samsung electronics co., ltd., Inhyung Song of Suwon-si (KR) for samsung electronics co., ltd., Kyungdon Mun of Suwon-si (KR) for samsung electronics co., ltd., Hyeonjeong Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/373, H01L23/00, H01L23/31, H01L23/498, H01L25/065, H01L25/16
Abstract: the present disclosure provides semiconductor packages including a heat dissipation structure. in some embodiments, the semiconductor package includes a package substrate, a stacked chip disposed on the package substrate and including a lower chip and an upper chip, a memory chip disposed on the package substrate adjacent to the stacked chip, and an encapsulant encapsulating at least a portion of the stacked chip and the memory chip on the package substrate. an upper surface of the upper chip is exposed from the encapsulant. a dummy silicon chip is in contact with the upper chip on the lower chip.
20240136254.INTEGRATED CIRCUIT DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sangkoo KANG of Suwon-si (KR) for samsung electronics co., ltd., Wookyung YOU of Suwon-si (KR) for samsung electronics co., ltd., Minjae KANG of Suwon-si (KR) for samsung electronics co., ltd., Koungmin RYU of Suwon-si (KR) for samsung electronics co., ltd., Hoonseok SEO of Suwon-si (KR) for samsung electronics co., ltd., Woojin LEE of Suwon-si (KR) for samsung electronics co., ltd., Junchae LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L21/762, H01L21/768, H01L27/088
Abstract: an integrated circuit (ic) device includes a substrate, a pair of fin-type active regions protruding from the substrate to define a trench region on the substrate, the fin-type active regions extending in a first lateral direction, a pair of source/drain regions on the fin-type active regions, respectively, a device isolation film in the trench region, the device isolation film apart from the substrate in a vertical direction, an etch stop structure filling at least a portion of the trench region between the substrate and the device isolation film, a via power rail between the pair of fin-type active regions and between the pair of source/drain regions, the via power rail passing through at least a portion of the etch stop structure, and a backside power rail passing through the substrate, the backside power rail in contact with one end of the via power rail.
Inventor(s): Bongwee YU of Suwon-si (KR) for samsung electronics co., ltd., Junho HUH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L23/00, H01L23/498, H01L25/065
Abstract: an integrated circuit device including a first semiconductor chip, a plurality of signal through silicon vias (tsv), a second semiconductor chip, a plurality of signal bumps and an interposer may be provided. the signal tsvs may be in the first semiconductor chip by a first pitch. the second semiconductor chip may be on the first semiconductor chip. the signal bumps may be on a lower surface of the second semiconductor chip by a second pitch wider than the first pitch. the interposer may be interposed between the first semiconductor chip and the second semiconductor chip and may be electrically connecting the signal tsvs with the signal bumps. thus, an occupying area of the signal tsvs in the first semiconductor chip may be decreased so that the integrated circuit device may have a smaller size.
Inventor(s): SEUNGWAN SHIN of Suwon-si (KR) for samsung electronics co., ltd., JUNGHOON KANG of Suwon-si (KR) for samsung electronics co., ltd., BYUNGMIN YU of Suwon-si (KR) for samsung electronics co., ltd., JUNG HYUN LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/31
Abstract: a semiconductor package includes: a first redistribution substrate; a semiconductor chip provided on the first redistribution substrate; a molding material molding the semiconductor chip and the first redistribution substrate; and a second redistribution substrate provided on the molding material, wherein the second redistribution substrate includes: at least one redistribution line; a metal pad; and a dielectric layer molding the at least one redistribution line and the metal pad, wherein the dielectric layer includes a marking region on the metal pad, and the metal pad includes a plurality of concave portions.
Inventor(s): DONGHYEON JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L21/48, H01L23/15
Abstract: the present disclosure relates to a semiconductor package and a manufacturing method thereof, and a manufacturing method of a semiconductor package according to an embodiment includes: preparing a glass substrate that includes a groove and a hole positioned around the groove; forming a conductive connection member to fill inside the hole of the glass substrate; attaching a semiconductor chip inside the groove of the glass substrate; forming a first redistribution structure for connection with the semiconductor chip and the conductive connection member on a first side of the glass substrate; and forming a second redistribution structure for connection with the conductive connection member on a second side of the glass substrate.
Inventor(s): Chiwan SONG of Suwon-si (KR) for samsung electronics co., ltd., Hyunna BAE of Suwon-si (KR) for samsung electronics co., ltd., Joohyung LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaewook JUNG of Suwon-si (KR) for samsung electronics co., ltd., Seungmin BAEK of Suwon-si (KR) for samsung electronics co., ltd., Junghyun CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L23/48, H01L25/10
Abstract: a semiconductor package includes: a chip-via composite substrate including a substrate, a semiconductor chip, and a plurality of through vias, wherein the substrate has a first surface and a second surface opposite to the first surface and includes a first region and a second region around the first region, wherein the semiconductor chip is provided in the first region and has chip pads and circuit patterns that are electrically connected to the chip pads, and wherein the plurality of through vias is provided in the second region and penetrate the substrate; a first redistribution wiring layer provided on the first surface of the substrate and having first redistribution wirings that are electrically connected to the chip pads and the through vias; and a second redistribution wiring layer provided on the second surface of the substrate and having second redistribution wirings that are electrically connected to the through vias.
20240136266.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Choongbin YIM of Suwon-si (KR) for samsung electronics co., ltd., Jiyong PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L23/31, H01L25/10
Abstract: a semiconductor package includes a first redistribution structure including a first redistribution layer and a first redistribution bonding pad, the first redistribution bonding pad electrically connected to the first redistribution layer, a first semiconductor chip on the first redistribution structure, and a second redistribution structure on the first semiconductor chip, the second redistribution structure including a second redistribution layer and a second redistribution bonding pad, the second redistribution layer electrically connected to the second redistribution layer. the semiconductor package includes a bonding wire electrically connecting the second redistribution bonding pad and the first redistribution bonding pad to each other, and a molding layer covering at least a portion the first semiconductor chip, the second redistribution structure, and the bonding wire on the first redistribution structure.
Inventor(s): KEUNYOUNG LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L21/48
Abstract: a semiconductor package includes a substrate. a pattern layer is disposed on a first surface of the substrate. the pattern layer includes a plurality of pads and a plating wire positioned between adjacent pads of the plurality of pads. a first protection layer is disposed on the first surface of the substrate to cover the pattern layer and expose the plurality of pads. at least one pad of the plurality of pads is physically separated from the plating wire.
20240136272.SEMICONDUCTOR PACKAGES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Eunsu Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L21/48, H01L25/10, H10B80/00
Abstract: a semiconductor package including: a front redistribution structure including an insulating layer defining an upper surface, a lower surface opposing the upper surface, and a side surface, front redistribution layers including a first redistribution layer on a first level adjacent to the lower surface and second redistribution layers on a second level higher than the first level relative to the lower surface, the second redistribution layers having an inner redistribution layer and an outer redistribution layer, a recess exposing at least a portion of the outer redistribution layer, and a dam on at least one side of the recess; connection bumps including a first bump electrically connected to the first redistribution layer and a second bump electrically connected to the outer redistribution layer within the recess; and an underfill that extends along a side surface of the second bump and a side surface of the dam within the recess.
Inventor(s): Geunwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungeun JO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L23/433, H01L25/00, H01L25/18, H10B80/00
Abstract: a semiconductor package includes: a first redistribution wiring layer having first redistribution wirings; a second redistribution wiring layer arranged on the first redistribution wiring layer, and including a first region, a second region, and a second redistribution wirings; a first semiconductor chip arranged on the first region of the second redistribution wiring layer; a plurality of second semiconductor chips spaced apart from each other on the upper surface of the second region of the second redistribution wiring layer; a plurality of third semiconductor chips arranged in the second region of the second redistribution wiring layer and spaced apart from each other between the first and second redistribution wiring layers; and a heat transfer medium arranged on the first region of the second redistribution wiring layer and overlapping the first semiconductor chip with the second redistribution wiring layer interposed between the first semiconductor chip and the heat transfer medium.
Inventor(s): Cheoljin CHO of Hwaseong-si (KR) for samsung electronics co., ltd., Jungmin PARK of Seoul (KR) for samsung electronics co., ltd., Hanjin LIM of Seoul (KR) for samsung electronics co., ltd., Jaehyoung CHOI of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/528
Abstract: a semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode including an outer protective layer, a conductive layer between opposing sidewalls of the outer protective layer, and an inner protective layer between opposing sidewalls of the conductive layer, a first supporter pattern on a side surface of the lower electrode, the first supporter pattern including a supporter hole, a dielectric layer on a surface of each of the lower electrode and the first supporter pattern, and an upper electrode on the dielectric layer. the outer protective layer includes titanium oxide, the conductive layer includes titanium nitride, and the inner protective layer includes titanium silicon nitride. in a horizontal cross-sectional view, the outer protective layer has an arc shape that extends between the dielectric layer and the conductive layer.
Inventor(s): Jee Woong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jin Kyu KIM of Suwon-si (KR) for samsung electronics co., ltd., Ho Jun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jae Hyun AHN of Suwon-si (KR) for samsung electronics co., ltd., So Ra YOU of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/528, H01L23/48, H01L29/417, H01L29/78
Abstract: a semiconductor device having simplicity in design and improved performance and methods for fabricating the same are provided. the semiconductor device includes a substrate including a frontside and a backside opposite the frontside, an electronic device on the frontside of the substrate, an interlayer insulating layer covering the electronic device, a frontside wiring structure on the interlayer insulating layer, a backside wiring structure on the backside of the substrate, and at least one unit chain connecting the electronic device with the backside wiring structure, the unit chain including a through plug passing through the substrate, a connection contact on the interlayer insulating layer, a first chain plug passing through the interlayer insulating layer to connect the through plug with the connection contact, and a second chain plug passing through the interlayer insulating layer to be connected to the through plug.
20240136307.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Geunwoo KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/498
Abstract: a semiconductor package includes a semiconductor chip including a semiconductor substrate having a first surface and a second surface opposite to the first surface, a chip pad located on the first surface and including a conductive layer, a support pad positioned on the first surface, spaced apart from the chip pad and including an insulating layer, a support bump connected to the support pad, a wiring substrate disposed to face the semiconductor substrate, a support bonding on trace (bot) pad disposed on the wiring substrate and bonded to the support bump, and a dummy area disposed on the wiring substrate and spaced apart from the support bot pad.
20240136311.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): GWANGJAE JEON of Suwon-si (KR) for samsung electronics co., ltd., MINKI KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyungchul SHIN of Suwon-si (KR) for samsung electronics co., ltd., WON IL LEE of Suwon-si (KR) for samsung electronics co., ltd., HYUEKJAE LEE of Suwon-si (KR) for samsung electronics co., ltd., Enbin JO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/48
Abstract: disclosed is a semiconductor package comprising lower and upper structure. the lower structure includes a first semiconductor substrate, first through vias vertically penetrating the first semiconductor substrate, first signal pads connected to the first through vias, first dummy pads between the first signal pads and electrically separated from the first through vias, and a first dielectric layer surrounding the first signal pads and the first dummy pads. the upper structure includes a second semiconductor substrate, second signal pads and second dummy pads, and a second dielectric layer surrounding the second signal pads and the second dummy pads. the first signal pad is in contact with one of the second signal pads. the first dummy pad is in contact with one of the second dummy pads. a first interval between the first dummy pads is 0.5 to 1.5 times a second interval between the first signal pads.
Inventor(s): Cheolan KWON of Suwon-si (KR) for samsung electronics co., ltd., Jingyu MOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, B23K3/02
Abstract: semiconductor manufacturing equipment including a main body having a bonding head, a head heater at a bottom of the bonding head, the head heater including a thermal compression surface, negative pressure channels recessed from the thermal compression surface and the negative pressure channels including holes therein, and a bonding tool having a first surface, a second surface, grooves at the first surface, the first surface configured to contact the thermal compression surface, and the second surface opposite to the first surface contacting a semiconductor chip for thermal compression may be provided.
Inventor(s): AENEE JANG of SUWON-SI (KR) for samsung electronics co., ltd., SEUNGDUK BAEK of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L25/00, H10B80/00
Abstract: a semiconductor package includes a package substrate including a first pad; a first memory device arranged on the package substrate and including first and second semiconductor chips stacked in a vertical direction; and a first chip connecting member electrically connecting the first semiconductor chip to the package substrate. the first semiconductor chip includes a first cell structure; a first peripheral circuit structure; a first bonding pad; and a first input/output pad electrically connected to the first pad of the package substrate through the first chip connection member. the second semiconductor chip includes a second cell structure; and a second bonding pad connected to the first bonding pad. a part of the first peripheral circuit structure protrudes from a sidewall of the second semiconductor chip so as not to overlap the second semiconductor chip.
20240136329.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hyuekjae Lee of Suwon-si (KR) for samsung electronics co., ltd., Dae-Woo Kim of Seongnam-si (KR) for samsung electronics co., ltd., Eunseok Song of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L25/10, H01L25/18
Abstract: a semiconductor package includes a first semiconductor chip including a first wiring layer including a first wiring structure and providing a first rear surface, and a first through via for first through via for power electrically connected to the first wiring structure; and a second semiconductor chip including a second wiring layer including a second wiring structure and providing a second rear surface, and a second through via for second through via for power electrically connected to the second wiring structure, wherein the first and second semiconductor chips have different widths, wherein the first semiconductor chip receives power through the first wiring structure and the first through via for first through via for power, wherein the second semiconductor chip receives power through the second wiring structure and the second through via for second through via for power.
20240136331.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hyun Soo CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Young Lyong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/31, H01L23/498, H10B80/00
Abstract: a semiconductor package may include a circuit board, an interposer structure on the circuit board, a mold layer, and a first semiconductor chip and a second semiconductor chip spaced apart from each other in a first direction on a center region of the interposer structure and electrically connected to the interposer structure. the interposer structure may include a plurality of trenches in an edge region of the interposer structure and extending through the interposer structure. the mold layer may be in the plurality of trenches and may wrap the first and second semiconductor chips. the mold layer may include a penetrating portion in the plurality of trenches and a stack portion on the interposer structure. a bottom surface of the penetrating portion of the mold layer may be on a same plane as a bottom surface of the interposer structure.
20240136334.SEMICONDUCTOR PACKAGES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jinnam KIM of Suwon-si (KR) for samsung electronics co., ltd., Seokho KIM of Suwon-si (KR) for samsung electronics co., ltd., Hoonjoo NA of Suwon-si (KR) for samsung electronics co., ltd., Kwangjin MOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/48, H01L25/18
Abstract: a semiconductor package includes a first structure including a first semiconductor chip comprising a first semiconductor integrated circuit, and a second structure on the first structure. the second structure includes a second semiconductor chip including a second semiconductor integrated circuit, a semiconductor pattern horizontally spaced apart from the second semiconductor chip and on a side surface of the second semiconductor chip, an insulating pattern between the second semiconductor chip and the semiconductor pattern, and through-electrode structures. at least one of the through-electrode structures penetrates through at least a portion of the second semiconductor chip or penetrates through the semiconductor pattern. the semiconductor pattern has a first side surface facing the side surface of the second semiconductor chip and a second side surface opposing the first side surface. the second side surface of the semiconductor pattern is vertically aligned with a side surface of the first semiconductor chip.
20240136340.SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Mina Choi of Suwon-si (KR) for samsung electronics co., ltd., Heejung Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/10, H01L23/00, H01L23/31, H01L23/48, H01L23/498
Abstract: a first package structure including a first redistribution structure, at least one first semiconductor chip disposed on the first redistribution structure, a first encapsulant covering the at least one first semiconductor chip, and a first through-via passing through the first encapsulant; a second package structure including a second redistribution structure, at least one second semiconductor chip disposed on the second redistribution structure, a second encapsulant covering the at least one second semiconductor chip, and a second through-via passing through the second encapsulant. the second package structure is disposed on the first package structure. at least one of a first upper end of the first through-via or a second upper end of the second through-via is between a first non-active surface and a second non-active surface.
Inventor(s): Seokgeun AHN of Suwon-si (KR) for samsung electronics co., ltd., Daewoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Seokhyun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/10, H01L23/00, H01L23/31, H01L23/48, H01L23/538, H01L25/00
Abstract: a semiconductor package, comprising: a first redistribution wiring layer including first and second surfaces opposite to each other, wherein the first redistribution wiring layer includes a first chip mounting region and a second chip mounting region adjacent to the first chip mounting region; a connection layer on the first surface of the first redistribution wiring layer; a first semiconductor chip on the first chip mounting region on the connection layer; a second semiconductor chip spaced apart from the first semiconductor chip on the second chip mounting region on the connection layer, wherein the second semiconductor chip includes through electrodes; a molding member on the first and second semiconductor chips on the connection layer; and a second redistribution wiring layer on the molding member, wherein the second redistribution wiring layer is electrically connected to the first redistribution wiring layer through the through electrodes.
Inventor(s): KEUMSEOK PARK of Slingerlands NY (US) for samsung electronics co., ltd., SOOYOUNG PARK of Halfmoon NY (US) for samsung electronics co., ltd., JAEJIK BAEK of Watervliet NY (US) for samsung electronics co., ltd., KANG-ILL SEO of Springfield VA (US) for samsung electronics co., ltd.
IPC Code(s): H01L27/088, H01L21/8234, H01L29/06, H01L29/08, H01L29/786
Abstract: integrated circuit devices and methods of forming the same are provided. an integrated circuit device may include a substrate and a transistor stack on the substrate, the transistor stack including a first transistor and a second transistor on the first transistor. the first transistor may be between the substrate and the second transistor and the first transistor may include first and second source/drain regions, a first channel region between the first and second source/drain regions, and a first gate structure on the first channel region. a lower surface of the first source/drain region may be higher than a lower surface of the first gate structure relative to the substrate.
20240136356.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Byeol Hae EOM of Suwon-si (KR) for samsung electronics co., ltd., Byung Ha CHOI of Suwon-si (KR) for samsung electronics co., ltd., Keun Hwi CHO of Suwon-si (KR) for samsung electronics co., ltd., Sung Won KIM of Suwon-si (KR) for samsung electronics co., ltd., Yuri MASUOKA of Suwon-si (KR) for samsung electronics co., ltd., Won Cheol JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/092, H01L29/06, H01L29/417, H01L29/423, H01L29/775
Abstract: a semiconductor device includes a first element separation structure, a second element separation structure, and a third element separation structure sequentially disposed along a first direction and extending in a second direction intersecting the first direction; a first active pattern extending in the first direction between the first element separation structure and the second element separation structure; a second active pattern extending in the first direction between the second element separation structure and the third element separation structure and separated from the first active pattern by the second element separation structure; a first gate electrode extending in the second direction on the first active pattern; and a plurality of second gate electrodes extending in the second direction on the second active pattern, wherein a width of the first active pattern in the second direction is greater than a width of the second active pattern in the second direction.
20240136374.IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jung Wook LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
Abstract: an image sensor comprises a first sub-pixel comprising a first photoelectric conversion region, a first floating diffusion region, and a first transfer transistor to transfer charges accumulated in the first photoelectric conversion region to the first floating diffusion region; and a second sub-pixel adjacent to the first sub-pixel, and comprising a second photoelectric conversion region, a second floating diffusion region, and a second transfer transistor to transfer charges accumulated in the second photoelectric conversion region to the second floating diffusion region. the first photoelectric conversion region may comprise a first and a second sub-region partitioned by a potential level isolation region that blocks movement of charges, and the first transfer transistor may comprise a first sub-transfer transistor to transfer charges accumulated in the first sub-region to the first floating diffusion region, and a second sub-transfer transistor to transfer charges accumulated in the second sub-region to the first floating diffusion region.
20240136375.IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Masato FUJITA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
Abstract: an image sensor, comprising a semiconductor substrate having first and second surfaces opposed to each other, a photoelectric conversion region in the semiconductor substrate, a floating diffusion region adjacent to the first surface in the semiconductor substrate, and a vertical transfer gate on the first surface of the semiconductor substrate, and extending in a direction perpendicular to the first surface and connected to the photoelectric conversion region. the vertical transfer gate may transfer photocharges collected in the photoelectric conversion region to the floating diffusion region. the vertical transfer gate includes a first vertical electrode portion and a second vertical electrode portion extending from the first surface of the semiconductor substrate in the vertical direction, and connected to the photoelectric conversion region, respectively.
Inventor(s): Minkwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Inyong Park of Suwon-si (KR) for samsung electronics co., ltd., Jinsun Pyo of Suwon-si (KR) for samsung electronics co., ltd., Beomsuk Lee of Suwon-si (KR) for samsung electronics co., ltd., Sungeun Lee of Suwon-si (KR) for samsung electronics co., ltd., In Sung Joe of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, G02B3/00
Abstract: image sensors and fabrication methods thereof. for example, the image sensor may include a first substrate having a first surface and a second surface that are opposite to each other, a plurality of pixels provided in the first substrate and arranged in pixel groups, each pixel group including four pixels arranged in two columns and two rows, a pixel separation structure in the first substrate and including a pixel group separation part that separates each pixel group from adjacent pixel groups and a pixel separation part that separates the pixels in each pixel group from each other, and a plurality of microlenses on the first surface and respectively overlapping the plurality of pixel groups. each of the microlenses includes a central part that has a first curvature and an edge part that has a second curvature. the first curvature is less than the second curvature.
Inventor(s): Hyukwoo KWON of Suwon-si (KR) for samsung electronics co., ltd., Munjun KIM of Suwon-si (KR) for samsung electronics co., ltd., Junwon LEE of Suwon-si (KR) for samsung electronics co., ltd., Younseok CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: a capacitor structure includes a lower electrode structure having a lower electrode on a substrate and an electrode structure including electrode patterns stacked on the lower electrode in a vertical direction substantially perpendicular to an upper surface of the substrate, a dielectric pattern contacting the lower electrode structure, and an upper electrode contacting the dielectric pattern.
20240136396.SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jiho Yoo of Suwon-si (KR) for samsung electronics co., ltd., Kihyung Ko of Suwon-si (KR) for samsung electronics co., ltd., Junsoo Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyunsup Kim of Suwon-si (KR) for samsung electronics co., ltd., Jihoon Cha of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L29/66
Abstract: a semiconductor device may include an active pattern on a substrate; an isolation pattern on the substrate, the isolation pattern covering opposite sidewalls of the active pattern; a liner on the isolation pattern, a liner including a material different from the isolation pattern; a gate structure contacting an upper surface of the active pattern and an upper surface of the liner; and a plurality of channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the plurality of channels extending through the gate structure.
20240136398.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Junmo PARK of Suwon-si (JP) for samsung electronics co., ltd., Wookhyun KWON of Suwon-si (JP) for samsung electronics co., ltd., Yeonho PARK of Suwon-si (KR) for samsung electronics co., ltd., Jongmin SHIN of Suwon-si (KR) for samsung electronics co., ltd., Heonjong SHIN of Suwon-si (JP) for samsung electronics co., ltd., Jongmin JUN of Suwon-si (JP) for samsung electronics co., ltd., Kyubong CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L29/24, H01L29/423, H01L29/775, H01L29/786
Abstract: a semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, a source/drain pattern, a gate electrode, and an insulation pattern. the channel pattern may include semiconductor patterns that are spaced apart from each other and vertically stacked. a lowermost one of the semiconductor patterns may be a first semiconductor pattern. the source/drain pattern may be connected to the semiconductor patterns. the gate electrode may be on the semiconductor patterns and may include a plurality of inner electrodes below the semiconductor patterns except the first semiconductor pattern. the insulation pattern may be between the first semiconductor pattern and the active pattern. the insulation pattern may include a dielectric pattern and a protection layer. the protection layer may be between the dielectric pattern and the first semiconductor pattern. the protection layer may be between the dielectric pattern and the active pattern.
20240136416.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jun Ki Park of Suwon-si (KR) for samsung electronics co., ltd., Sung Hwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Wan Don Kim of Suwon-si (KR) for samsung electronics co., ltd., Heung Seok Ryu of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/417, H01L21/285, H01L29/06, H01L29/40, H01L29/423, H01L29/45, H01L29/66, H01L29/775
Abstract: a semiconductor device includes an active pattern extending in a first direction, a plurality of gate structures on the active pattern spaced in the first direction, and including a gate electrode extending in a second direction, a source/drain pattern between adjacent gate structures, a silicide mask pattern on the source/drain pattern, an upper surface of the silicide mask pattern being lower than an upper surface of the gate electrode, a source/drain contact on the source/drain pattern connected to the source/drain pattern, and a contact silicide film between the source/drain contact and the source/drain pattern in contact with a bottom surface of the silicide mask pattern, wherein a height from a lowermost part of the source/drain pattern to a lowermost part of the source/drain contact is smaller than a height from the lowermost part of the source/drain pattern to the bottom surface of the silicide mask pattern.
Inventor(s): Edwardnamkyu Cho of Suwon-si (KR) for samsung electronics co., ltd., Seokhoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Jungtaek Kim of Suwon-si (KR) for samsung electronics co., ltd., Pankwi Park of Suwon-si (KR) for samsung electronics co., ltd., Sumin Yu of Suwon-si (KR) for samsung electronics co., ltd., Seojin Jeong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/66, H01L29/06, H01L29/423, H01L29/775, H01L29/786
Abstract: a manufacturing method of a semiconductor device, includes forming a plurality of main gate sacrificial patterns spaced apart from each other on a stacked structure of subgate sacrificial patterns and semiconductor patterns; forming a first insulating layer between main gate sacrificial patterns; removing the main gate sacrificial patterns; removing the subgate sacrificial patterns; forming a main gate dummy pattern in a space from which the main gate sacrificial patterns are removed; forming a plurality of subgate dummy patterns in a space from which the subgate sacrificial patterns are removed; forming a recess under a space where the first insulating layer is removed; forming a source/drain pattern within the recess; forming a second insulating layer on the source/drain pattern; removing the main gate dummy pattern and the subgate dummy patterns; and forming a gate electrode in a space where the main gate dummy pattern and the subgate dummy patterns are removed.
Inventor(s): Seungheon Lee of Suwon-si (KR) for samsung electronics co., ltd., Donghyun Roh of Suwon-si (KR) for samsung electronics co., ltd., Jangho Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/66, H01L21/8234, H01L27/088, H01L29/06, H01L29/423, H01L29/775, H01L29/786
Abstract: a method of manufacturing a semiconductor device, includes forming a mask layer on a semiconductor structure having a plurality of gate lines and a plurality of intergate insulating portions, forming an opening that exposes a cut region of the plurality of gate lines in the mask layer, forming a separation hole by removing a portion of a gate capping layer exposed by the opening, forming a pyrolysis material pattern in the separation hole, forming an etch stop layer on an upper surface of the mask layer and on a side wall portion of the separation hole from which the pyrolysis material pattern is removed, while the pyrolysis material pattern is decomposed and removed, and removing a portion of the gate electrode exposed by the separation hole using the etch stop layer.
20240136430.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jongmin SHIN of Suwon-si (KR) for samsung electronics co., ltd., Wook Hyun KWON of Suwon-si (KR) for samsung electronics co., ltd., Su-Hyeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Jun Mo PARK of Suwon-si (KR) for samsung electronics co., ltd., Kyu Bong CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/775, H01L27/088, H01L29/06, H01L29/423
Abstract: a semiconductor device includes a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern and second sheet patterns, a height of the second lower pattern being smaller than a height of the first lower pattern; a first gate structure on the first lower pattern; a second gate structure on the second lower pattern; a first source/drain pattern on the first lower pattern and connected to the first sheet patterns; and a second source/drain pattern on the second lower pattern and connected to the second sheet patterns, wherein a width of an upper surface of the first lower pattern is different from a width of an upper surface of the second lower pattern, and wherein a number of first sheet patterns is different from a number of second sheet patterns.
[[20240136584.CATHODE HYBRID ELECTROLYTE FOR SOLID SECONDARY BATTERY, CATHODE INCLUDING THE CATHODE HYBRID ELECTROLYTE, METHOD OF PREPARING THE CATHODE, AND SOLID SECONDARY BATTERY INCLUDING THE CATHODE HYBRID ELECTROLYTE_simplified_abstract_(samsung electronics co., ltd.)]]
Inventor(s): Myungjin Lee of Seoul (KR) for samsung electronics co., ltd., Jusik Kim of Hwaseong-si (KR) for samsung electronics co., ltd., Ryounghee Kim of Uiwang-si (KR) for samsung electronics co., ltd., Victor ROEV of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01M10/0568, C08F112/14, C08F120/38, H01M4/36, H01M4/62, H01M10/0562
Abstract: provided are a cathode hybrid electrolyte for a solid secondary battery, a cathode including the cathode hybrid electrolyte, a method of preparing the cathode, and a solid secondary battery including the cathode hybrid electrolyte, wherein the cathode hybrid electrolyte includes an ion conductor represented by formula 1, and an ionic liquid, where at least a portion of the anions of the ionic liquid comprise the same anionic moiety —y of the ion conductor,
[[20240136584.CATHODE HYBRID ELECTROLYTE FOR SOLID SECONDARY BATTERY, CATHODE INCLUDING THE CATHODE HYBRID ELECTROLYTE, METHOD OF PREPARING THE CATHODE, AND SOLID SECONDARY BATTERY INCLUDING THE CATHODE HYBRID ELECTROLYTE_simplified_abstract_(samsung electronics co., ltd.)]]
Inventor(s): Myungjin Lee of Seoul (KR) for samsung electronics co., ltd., Jusik Kim of Hwaseong-si (KR) for samsung electronics co., ltd., Ryounghee Kim of Uiwang-si (KR) for samsung electronics co., ltd., Victor ROEV of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01M10/0568, C08F112/14, C08F120/38, H01M4/36, H01M4/62, H01M10/0562
Abstract:
[[20240136584.CATHODE HYBRID ELECTROLYTE FOR SOLID SECONDARY BATTERY, CATHODE INCLUDING THE CATHODE HYBRID ELECTROLYTE, METHOD OF PREPARING THE CATHODE, AND SOLID SECONDARY BATTERY INCLUDING THE CATHODE HYBRID ELECTROLYTE_simplified_abstract_(samsung electronics co., ltd.)]]
Inventor(s): Myungjin Lee of Seoul (KR) for samsung electronics co., ltd., Jusik Kim of Hwaseong-si (KR) for samsung electronics co., ltd., Ryounghee Kim of Uiwang-si (KR) for samsung electronics co., ltd., Victor ROEV of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01M10/0568, C08F112/14, C08F120/38, H01M4/36, H01M4/62, H01M10/0562
Abstract: where, in formula 1, x, rto r, y, and n are the same as defined in the detailed description.
Inventor(s): Kyungkyun KANG of Suwon-si (KR) for samsung electronics co., ltd., Yongsub Lee of Suwon-si (KR) for samsung electronics co., ltd., Jaeho Lim of Suwon-si (KR) for samsung electronics co., ltd., Sangmin Han of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q1/24, H01Q1/38, H01Q1/44, H04M1/02
Abstract: an electronic device includes a display, a rear cover, a first frame including a first portion in which at least one speaker hole is formed in a region and a second portion extending from the first portion in a first direction, a second frame coupled to the second portion of the first frame, a speaker disposed in a space between the second frame and the second portion of the first frame, an acoustic duct formed in the first frame, a film including a conductive pattern, and a wireless communication circuit electrically coupled to the first conductive pattern. the acoustic duct includes a first acoustic duct portion and a second acoustic duct portion, at least one region of the first film covers an entirety of the opening, and the wireless communication circuit is configured to feed power to a point of the first conductive pattern to receive a signal of a first frequency band.
Inventor(s): Dongjin JUNG of Gyeonggi-do (KR) for samsung electronics co., ltd., Chanju PARK of Gyeonggi-do (KR) for samsung electronics co., ltd., Jungi JEONG of Gyeonggi-do (KR) for samsung electronics co., ltd., Taeksun KWON of Gyeonggi-do (KR) for samsung electronics co., ltd., Jungwoo SEO of Gyeonggi-do (KR) for samsung electronics co., ltd., Junhwa OH of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q1/24, H01Q1/38, H01Q21/00
Abstract: an antenna module, according to various embodiments, may comprise: a first layer including a first etching region, a first via pad disposed to be spaced apart from an edge of the first etching region, and a first via hole disposed on one surface of the first via pad; and a second layer stacked on one surface of the first layer, and including a second etching region, a plurality of second via pads disposed to be spaced apart from an edge of the second etching region, a plurality of second via holes disposed on one surface of the plurality of second via pads, and a plurality of second dividing lines electrically connecting the plurality of second via pads.
Inventor(s): Gennadiy Aleksandrovich EVTYUSHKIN of Moscow (RU) for samsung electronics co., ltd., Elena Aleksandrovna SHEPELEVA of Moscow (RU) for samsung electronics co., ltd., Anton Sergeevich LUKYANOV of Moscow (RU) for samsung electronics co., ltd.
IPC Code(s): H01Q9/04, H01Q21/06
Abstract: the disclosure relates to radio engineering, for example to a termination load embedded in a printed circuit board substrate and an antenna array including the termination load. the disclosure reduces the complexity and size and increases the reliability of the termination load, as well as in increasing the reliability and speed of wireless data transmission in antenna arrays that use the termination loads. the termination load embedded in the printed circuit board substrate comprises: a fragment of at least one feeding line, a transitional patch, a top resonator patch, a top metal ground layer coplanar with the top patch, wherein a resistive material is disposed in a gap between the top resonator patch and the top metal layer, said fragment of the at least one feeding line terminates in the termination load in the form of an excitation probe, said at least one feeding line is located in the printed circuit board between the bottom ground layer of the printed circuit board and the top layer of the printed circuit board, in which the top resonator patch, the resistive material and the top metal layer are located, the transitional patch is located in the printed circuit board between the layer in which at least one feeding line is located and said top layer, the excitation probe, the transitional patch and the top resonator patch are coupled to each other by electromagnetic coupling.
Inventor(s): Juneseok LEE of Suwon-si (KR) for samsung electronics co., ltd., Jinsu Heo of Suwon-si (KR) for samsung electronics co., ltd., Youngsub Kim of Suwon-si (KR) for samsung electronics co., ltd., Jungho Park of Suwon-si (KR) for samsung electronics co., ltd., Kwanghyun Baek of Suwon-si (KR) for samsung electronics co., ltd., Youngju Lee of Suwon-si (KR) for samsung electronics co., ltd., Kyoungho Jeong of Suwon-si (KR) for samsung electronics co., ltd., Dohyuk Ha of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q21/06, H01Q1/24, H01Q9/04
Abstract: according to various embodiments of the disclosure, an antenna device comprises: a first antenna array including an array of a plurality of first radiation patches, a communication circuit configured to transmit and/or receive a radio signal using at least one of the first radiation patches, and at least one first isolator comprising a conductor disposed in an area between two adjacent first radiation patches among the first radiation patches. the first isolator may include a first portion, a second portion disposed in parallel with the first portion, and a third portion electrically connecting the first portion with the second portion. the first portion and the second portion may be configured to generate current flows having a phase difference of 180 degrees with respect to each other.
Inventor(s): Eonguk Kim of Suwon-si (KR) for samsung electronics co., ltd., Chanhee Jeon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02H9/04, H03K19/0185
Abstract: a semiconductor device includes: a voltage clamping circuit including a plurality of first elements operating upon receiving a voltage having a first level and configured to output a clamp signal swinging in the first level by adjusting a voltage of an external input signal swinging in a second level more than twice the first level; a first buffer circuit configured to buffer the clamp signal; a level down shifter circuit configured to reduce the voltage of the clamp signal and output an internal input signal swinging in the first level between a predetermined reference voltage and a first power supply voltage higher than the reference voltage; and a second buffer circuit configured to buffer the internal input signal and transmits the internal input signal to a core circuit.
Inventor(s): Sukjin KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangyoung CHO of Suwon-si (KR) for samsung electronics co., ltd., Eonguk KIM of Suwon-si (KR) for samsung electronics co., ltd., Chanhee JEON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02H9/04
Abstract: an electrostatic discharge clamp circuit includes a resistor connected between a first node and a second node, a first capacitor connected between the second node and a third node, a second capacitor connected between a fourth node and the third node, a third capacitor connected between a fifth node and the third node, a first inverter providing a power supply voltage or a voltage of the fourth node based on a voltage of the second node, a second inverter providing an output voltage of the first inverter or a voltage of the fifth node based on the voltage of the fourth node, a third inverter configured to provide an output voltage of the second inverter or the ground voltage based on the voltage of the fifth node.
Inventor(s): Daewoong CHO of Suwon-si (KR) for samsung electronics co., ltd., Kyeseok YOON of Suwon-si (KR) for samsung electronics co., ltd., Seunghoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeongdu YOO of Suwon-si (KR) for samsung electronics co., ltd., Sungwoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Jungwook HEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02J7/00
Abstract: a circuit includes: an overcurrent limiting (ocl) detector configured to detect whether a level of an inductor current reaches an ocl level and to generate an ocl detection voltage; a control loop circuit configured to generate a reset voltage by comparing a ramp voltage reflecting the level of the inductor current with an error voltage generated based on an operating condition that is out of a preset operating condition; an adaptive ocl controller configured to generate an ocl control current by counting a number of pulses of the ocl detection voltage and a number of pulses of the reset voltage; an oscillator configured to generate an oscillation voltage wherein a frequency of the oscillation voltage varies based on a magnitude of the overcurrent limit control current; and a switching transistor for switching the inductor current based on the oscillation voltage.
Inventor(s): JUNHAN BAE of Suwon-si (KR) for samsung electronics co., ltd., DONGJOON KIM of Suwon-si (KR) for samsung electronics co., ltd., DUSEUNG OH of Suwon-si (KR) for samsung electronics co., ltd., WOONHYUNG HEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02J7/00, H02H7/18
Abstract: an electronic device including: a connector including a voltage terminal; a battery; a corruption detection circuit configured to detect whether the connector is corrupted; a voltage cutoff circuit configured to electrically connect the voltage terminal with an internal node when corruption of the connector is not detected by the corruption detection circuit and to electrically disconnect the voltage terminal from the internal node when the corruption is detected by the corruption detection circuit; a charging pin connected with the internal node, and configured to transfer a voltage of the internal node to an external device when the charging pin is connected with the external device; and a power management integrated circuit connected between the internal node and the battery, and configured to charge the battery by using the voltage of the internal node or to generate the voltage of the internal node by using a voltage of the battery.
Inventor(s): Wonmyung Woo of Suwon-si (KR) for samsung electronics co., ltd., Duhee Jang of Suwon-si (KR) for samsung electronics co., ltd., Jeongil Kang of Suwon-si (KR) for samsung electronics co., ltd., Hyungwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Sanghoon Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02M1/42, H02M1/38
Abstract: the present disclosure provides power supply apparatuses and controlling methods thereof. in some embodiments, a power supply apparatus includes a power factor correction (pfc) circuit, and a control circuit configured to control the pfc circuit. the pfc circuit includes a power inputter configured to receive alternating current voltage to be rectified, an inductor having an end coupled to an end of the power inputter, a first switching element configured to be turned on and off according to a first control signal, a second switching element configured to be turned on and off according to a second control signal, and an outputter configured to output a direct current voltage through an output capacitor. the control circuit is further configured to respectively apply the first and second control signals to the first and second switching elements such that the first and the second switching elements are alternately turned on.
Inventor(s): Byounggon Kang of Suwon-si (KR) for samsung electronics co., ltd., Dalhee Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H03K3/037, G06F1/08, H03K19/20
Abstract: a clock gating cell is provided. the clock gating cell includes: an inverter circuit configured to generate an inverted clock signal by inverting a clock signal; a first control circuit configured to receive the inverted clock signal, an enable signal, and a scan enable signal, and output a first internal signal at a first node; a second control circuit configured to receive the first internal signal, the clock signal, the enable signal, and the scan enable signal, and output a second internal signal at a second node; and an output driver configured to receive the second internal signal, and output an output clock signal to an output node and a third internal signal to a third node. the first control circuit and the second control circuit are configured to receive the third internal signal at the third node.
Inventor(s): Eonguk Kim of Suwon-si (KR) for samsung electronics co., ltd., Jinsu Jeong of Suwon-si (KR) for samsung electronics co., ltd., Chanhee Jeon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H03K19/0185, H03K3/356
Abstract: a level shifter includes: an input circuit receiving an input signal swinging between a reference voltage and a first power supply voltage having a level higher than a level of the reference voltage; an output circuit outputting an output signal swinging between a second power supply voltage having a level higher than the level of the first power supply voltage and a third power supply voltage having a level higher than the level of the second power supply voltage; and a tolerant circuit connected between the input circuit and the output circuit, and configured to limit an output voltage of the input circuit to a range between the reference voltage and the second power supply voltage.
Inventor(s): JOO-HAN KIM of SUWON-SI (KR) for samsung electronics co., ltd., JUNGSU HAN of SUWON-SI (KR) for samsung electronics co., ltd., BEOM KON KIM of SUWON-SI (KR) for samsung electronics co., ltd., JOOHYUN DO of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H03M1/06, H03M1/12
Abstract: a digital signal processing circuit includes an analog gain compensator that compensates for an analog gain of a baseband signal including a plurality of component carriers (ccs) to output a compensated baseband signal; an analog-to-digital converter (adc) that converts the compensated baseband signal into a first digital signal; a plurality of filtering circuits that generate a second digital signal from the first digital signal; and a control circuit. each filtering circuit sequentially filters the first digital signal so that a corresponding one of the second digital signals retains one cc among the ccs, compensates for a digital gain, and a performs down-sampling. the control circuit generates an analog gain control signal for controlling the analog gain based on the second digital signals and a digital gain control signal for controlling the digital gain.
Inventor(s): Avner DOR of Kfar Saba (IL) for samsung electronics co., ltd., Yaron SHANY of Kfar Saba (IL) for samsung electronics co., ltd., Ariel DOUBCHAK of Herzliya (IL) for samsung electronics co., ltd., Amit BERMAN of Binyamina (IL) for samsung electronics co., ltd.
IPC Code(s): H03M13/15, H03M13/11
Abstract: a soft-decision decoding computes a first syndrome polynomial in accordance with a received word, computes a second syndrome polynomial by multiplying the first syndrome polynomial by a locator polynomial based on locations of erasures within the received word, finds a basis and private solution to an affine space of polynomials that solve key equations based on the second syndrome polynomial, determines a weak set of a locations of symbols in the received word with confidence below a certain confidence level, computes a matrix from the basis, the private solution and the weak set, determines sub-matrices in the matrix whose rank is equal to a rank of the matrix, determines error locator polynomial (elp) candidates from the sub-matrices, the basis, and the private solution, and corrects the received word using a selected one of the elp candidates.
Inventor(s): Janghyun NAM of Suwon-si (KR) for samsung electronics co., ltd., Kyuhyuck KWAK of Suwon-si (KR) for samsung electronics co., ltd., Hyoseok NA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B1/04, H04W76/10, H04W76/30
Abstract: an electronic device may include at least one antenna, at least one rf circuit including at least one rfic, at least one pa, and at least one divider, a connection part, and at least one processor operatively connected to the connection part and the at least one rf circuit. the at least one processor may be configured to turn off the at least one pa based on a connection between the electronic device and an external electronic device (), convert, via the at least one rfic, data for transmission to the external electronic device into an rf signal, and direct the rf signal to the connection part via the at least one divider, the rf signal being directed to the external electronic device via the connection part.
20240137052.ELECTRONIC DEVICE INCLUDING COUPLER_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): John Moon of Suwon-si (KR) for samsung electronics co., ltd., Hyoseok Na of Suwon-si (KR) for samsung electronics co., ltd., Dongil Yang of Suwon-si (KR) for samsung electronics co., ltd., Doohwan Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B1/04, H03F3/24, H04B1/44
Abstract: provided is an electronic device including a transceiver configured to output a first transmission signal, a first radio frequency (rf) module configured to amplify the first transmission signal obtained from the transceiver to generate an amplified first transmission signal, a first antenna configured to transmit the amplified first transmission signal, and a main coupler provided outside the first rf module along a transmission path between the first rf module and the first antenna, and configured to output a first coupling signal corresponding to the first transmission signal. the first rf module includes at least one power amplifier configured to amplify the first transmission signal, and a switch configured to connect one of a plurality of input ports, including at least one input port connected to the main coupler and configured to receive the first coupling signal output by the main coupler, with an output port connected to the transceiver.
Inventor(s): Gyoungil KWAK of Suwon-si (KR) for samsung electronics co., ltd., Jinho KIM of Suwon-si (KR) for samsung electronics co., ltd., Sunyoung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B7/0456, H04L5/00, H04L25/02
Abstract: an electronic device includes processing circuitry configured to calculate an intra metric based on cross correlation of first reference signal symbols (rss) included in a first precoding resource block group (prg) to which a target resource element (re) belongs, calculate an inter metric based on cross correlation of one or more second rss and one or more among the first rss, the one or more second rss being included in a second prg adjacent to the first prg along a frequency axis of a physical channel, the one or more second rss being in proximity to the target re, and the physical channel being received from a base station, compare a first ratio between the intra metric and the inter metric with a threshold ratio to obtain a comparison result, and determine a channel estimation mode with respect to the target re based on the comparison result.
Inventor(s): Jaehyun LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngjoon KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Ilju NA of Gyeonggi-do (KR) for samsung electronics co., ltd., Kitaek BAE of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04B7/145
Abstract: disclosed is a method performed by a reconfigurable intelligent surface (ris) device, the method including configuring a number of fixed beams for a beam, a fixed reflection pattern for the beam, and a fixed period for the beam; and reflecting a signal based on the number of the fixed beams, the fixed reflection pattern, and the fixed period, with the fixed reflection pattern being related to an amplitude and a phase of the reflected signal.
Inventor(s): Mojtaba Rahmati of San Diego CA (US) for samsung electronics co., ltd., Hyukjoon Kwon of San Diego CA (US) for samsung electronics co., ltd., Dongwoon Bai of San Diego CA (US) for samsung electronics co., ltd.
IPC Code(s): H04L1/00, H04W52/02
Abstract: a system and a method are disclosed for determining early termination during an iterative detection and decoding (idd) procedure. the method may include computing, during the idd procedure, one or more log-likelihood ratios (llrs) of one or more cyclic-redundancy checks (crc), and determining that at least one of the llrs predict a failure of a crc check and, in response, terminating the idd procedure.
Inventor(s): Ameha Tsegaye ABEBE of Gyeonggi-do (KR) for samsung electronics co., ltd., Dhivagar BASKARAN of Bangalore (IN) for samsung electronics co., ltd., Youngrok JANG of Gyeonggi-do (KR) for samsung electronics co., ltd., Younsun KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Seongmok LIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Hyoungju JI of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04L5/00
Abstract: the present disclosure relates to a communication method and system for converging a 5th-generation (5g) communication system for supporting higher data rates beyond a 4th-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. the present disclosure relates to the field of 5g communication networks and more particularly to the behaviour of user equipment (ue) towards selecting a default beam and pathloss reference signal (pl-rs) for the transmission of physical uplink control channel (pucch).
Inventor(s): Hoon-dong NOH of Gyeonggi-do (KR) for samsung electronics co., ltd., Young-woo KWAK of Gyeonggi-do (KR) for samsung electronics co., ltd., Cheol-kyu SHIN of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04L5/00, H04W72/044, H04W72/23
Abstract: the disclosure relates to a wireless communication system, in which a method performed by a user equipment includes receiving, from a base station, information configuring a plurality of sounding reference signal (srs) resources that are related with one channel state information-reference signal (csi-rs) resource, receiving an srs resource indicator (sri) indicating at least one srs resource from among the plurality of srs resources, obtaining, based on an implicit precoding being indicated for an uplink channel, precoding information for the uplink channel based on the csi-rs resource related with a most recently transmitted srs of the at least one srs resource indicated by the sri, and transmitting, to the base station, the uplink channel based on the precoding information.
Inventor(s): Kyungho RYU of Suwon-si (KR) for samsung electronics co., ltd., Hyunwook LIM of Suwon-si (KR) for samsung electronics co., ltd., Beomcheol KIM of Suwon-si (KR) for samsung electronics co., ltd., Jung-Pil LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L25/03
Abstract: a receiver includes a first equalizer that receives an input data signal through a communication channel and equalizes the input data signal based on a first control code to generate a first equalization signal, a second equalizer that equalizes the first equalization signal based on a clock signal and a second control code to generate a second equalization signal, a clock data recovery circuit that restores the clock signal based on the second equalization signal, deserializes the second equalization signal, and outputs a deserialized second equalization signal, and a controller that adjusts the first control code and the second control code based on the deserialized second equalization signal.
Inventor(s): Seungsik EOM of Suwon-si (KR) for samsung electronics co., ltd., Youngjin CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Sangyun HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L25/06, G06F8/65, H04L25/03
Abstract: an electronic device includes an analog front end (afe) circuit including plural modules, and a processor that provides a user interface for a firmware update, determines a target module, of which offset calibration is to be performed, among the plural modules, based on a user input to the user interface, determines a position within in the afe circuit to which a common mode voltage is to be applied to perform the offset calibration of the target module, and determines an offset calibration sequence including the target module and the position.
Inventor(s): Seokwon YANG of Daejeon (KR) for samsung electronics co., ltd., Song Min KIM of Daejeon (KR) for samsung electronics co., ltd., Minseok KIM of Daejeon (KR) for samsung electronics co., ltd.
IPC Code(s): H04L27/38, H04L5/00, H04L25/03, H04L27/34
Abstract: provided is an electronic device including processing circuitry configured to generate at least one signal according to a first communication protocol by referencing a lookup table, the lookup table including simulation waveform information, and the simulation waveform information simulating a second communication protocol different from the first communication protocol, and transmit the at least one signal, the at least one signal including a data packet.
Inventor(s): Deepanshu GAUTAM of Bangalore (IN) for samsung electronics co., ltd., Ashutosh KAUSHIK of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04L43/04, H04L43/062
Abstract: a method and an apparatus for logging events in a communication system is provided. the method comprises receiving, from a network function, a request for creating a managed object instance (moi) of an information object class (ioc) for registering logs associated with a plurality of management services of a communication network. the method further comprises creating a fragment of network resource model (nrm) for logging events associated with the plurality of management services, based on the moi, wherein the nrm comprises a set of mois. additionally, creating the fragment comprises generating the set mois for logging events related to the plurality of management services, wherein the set of mois comprise an moi for registration of a log, an moi for information of the log, and an moi for entry of the log. advantageously, the present disclosure enables logging of events in communication networks.
Inventor(s): Jinhyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Wonbo Lee of Suwon-si (KR) for samsung electronics co., ltd., Sungin Kim of Suwon-si (KR) for samsung electronics co., ltd., Taewan Kim of Suwon-si (KR) for samsung electronics co., ltd., Hongshik Kim of Suwon-si (KR) for samsung electronics co., ltd., Jaewon Jang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L47/283, H04L61/5007
Abstract: various embodiments of the disclosure relate to a device and a method for modifying a upf in an electronic device. the electronic device may include: a communication circuit and a processor. the processor may be configured to: perform data communication through a pdu session and ip address , identify ip address of the pdu session related to modification of the upf, identify an rtt in which the ip address is used and an rtt in which the ip address is used, in a state in which the ip address and the ip address of the pdu session are allocated, modify the data path to ip address , based on a result of comparing the rtt in which ip address is used and the rtt in which ip address is used, prior to expiration of a valid lifetime of ip address , and release the ip address based on modification of the data path to the ip address
Inventor(s): Dowan KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinsoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Sooyong EOM of Suwon-si (KR) for samsung electronics co., ltd., Yoserb YI of Suwon-si (KR) for samsung electronics co., ltd., Jubong LEE of Suwon-si (KR) for samsung electronics co., ltd., Seokhyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Junhyung PARK of Suwon-si (KR) for samsung electronics co., ltd., Gajin SONG of Suwon-si (KR) for samsung electronics co., ltd., Sunkey LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L9/40, H04L9/08, H04L9/32, H04L61/5007, H04L67/02
Abstract: an electronic device includes a communication circuit, and at least one processor connected to the communication circuit. the at least one processor may be configured to broadcast a device identification (id) of the electronic device and an internet protocol (ip) address of the electronic device through the communication circuit. the at least one processor may be configured to receive a token encrypted by an external electronic device and data of the external electronic device through the communication circuit. the at least one processor may be configured to decrypt the encrypted token by using a private key of the electronic device. the at least one processor may be configured to transmit the data of the external electronic device to a server in a cloud by using the decrypted token through the communication circuit.
Inventor(s): Seong-wook JEONG of Seoul (KR) for samsung electronics co., ltd., Sung-hye LEE of Seoul (KR) for samsung electronics co., ltd., Sung-hyun JANG of Seoul (KR) for samsung electronics co., ltd., Kwan-min LEE of Seoul (KR) for samsung electronics co., ltd., Sang-hee LEE of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H04N7/14, G06F3/16, H04N5/445, H04N21/422, H04N21/4223, H04N21/431, H04N21/439, H04N21/44, H04N21/47, H04N21/4788
Abstract: a display apparatus includes a communication interface configured to communicate with another display apparatus, a display configured to display contents being shared with the other display apparatus and a video call user interface (ui) for a video call with a user of the other display apparatus, and a processor, in response to at least one of a gesture and a voice of the user included in video call data received from the other display apparatus satisfying a predetermined condition, configured to control the display to change a size of the video call ui displayed on the display.
Inventor(s): Sangyun Lee of Yongin-si (KR) for samsung electronics co., ltd., Moongi Kang of Seoul (KR) for samsung electronics co., ltd., Seokho Yun of Seoul (KR) for samsung electronics co., ltd., Jonghyun Kim of Goyang-si (KR) for samsung electronics co., ltd., Kyeonghoon Jeong of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H04N9/01, G02B27/10, H04N9/64, H04N23/84, H04N23/88, H04N25/13
Abstract: an apparatus for acquiring images includes an image sensor and a signal processor. the image sensor may include a sensor substrate and a color separation lens array, wherein the sensor substrate includes a plurality of photo-sensing cells, and the color separation lens array may separate an incident light into a plurality of lights having different wavelengths and forms a phase distribution for condensing the plurality of lights having the different wavelengths on adjacent photo-sensing cells of the plurality of photo-sensing cells. the signal processor may perform deconvolution on sensing signals of the plurality of photo-sensing cells to obtain a sub-sampled image, perform demosaicing to restore a full resolution image having a full resolution from the sub-sampled image, and correct a color of the full resolution image using a point spread function (psf) of the color separation lens array.
Inventor(s): Rajan Laxman Joshi of San Diego CA (US) for samsung electronics co., ltd., Madhukar Budagavi of Plano TX (US) for samsung electronics co., ltd.
IPC Code(s): H04N19/463, H04N19/136, H04N19/186
Abstract: an apparatus includes a communication interface configured to receive a bitstream for a compressed video and a processor operably coupled to the communication interface. the processor is configured to identify a video format for the compressed video. the processor is also configured to determine, from one or more of at least one signaling element and the identified video format, a displacement data packing arrangement. the processor is also configured to retrieve displacement data according to the determined displacement data packing arrangement.
Inventor(s): Madhukar Budagavi of Plano TX (US) for samsung electronics co., ltd., Rajan Laxman Joshi of San Diego CA (US) for samsung electronics co., ltd.
IPC Code(s): H04N19/54, H04N19/52, H04N19/597, H04N19/70
Abstract: an apparatus includes a communication interface configured to receive a compressed video bitstream and a processor operably coupled to the communication interface. the processor is configured to determine, for a vertex in the compressed video bitstream, one or more vertex neighbors based on a signaled limit to a number of the one or more vertex neighbors. the processor is also configured to identify, based on a vertex motion vector (vmv) identifier signaled in the compressed video bitstream, a vmv predictor from among a plurality of vmv predictors to use for the vertex. the processor is also configured to reconstruct a mesh frame based on the determined one or more vertex neighbors and the identified vmv predictor.
Inventor(s): Jihye KWON of Suwon-si (KR) for samsung electronics co., ltd., Youngchan WOO of Suwon-si (KR) for samsung electronics co., ltd., Joayoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Insik MYUNG of Suwon-si (KR) for samsung electronics co., ltd., Miyoung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N21/439, H04N21/442
Abstract: a method of controlling a sound output of a first audio reproducing device that is operable in a simultaneous listening mode with a second audio reproducing device such that, in the simultaneous listening mode, each of the first audio reproducing device and the second audio reproducing device operate to output content sound based on an audio content signal streamed from a corresponding content providing device through a communication connection, according to their respective sound output settings, the method including detecting a conversation request from the second audio reproducing device; controlling the first audio reproducing device to exit the simultaneous listening mode, enter a conversation mode, and change the sound output setting of the first audio reproducing device, in response to detecting the conversation request; and controlling the first audio reproducing device to output the content sound based on the changed sound output setting while operating in the conversation mode.
Inventor(s): Wooseok KANG of Suwon-si (KR) for samsung electronics co., ltd., Doohyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Minho KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N21/44, H04N21/442
Abstract: disclosed is an electronic apparatus. the electronic apparatus includes: a communication interface comprising communication circuitry, a display, a memory configured to store at least one instruction, and one or more processors connected to the communication interface, the display, and the memory and configured to control the electronic apparatus, wherein the one or more processors, by executing the at least one instruction, may be configured to: control the display to display content streamed from an external server through the communication interface, based on receiving delay characteristic information corresponding to the streamed content from the external server, identify a critical value of a stream buffer in which the streamed content is stored based on the delay characteristic information, and control at least one of a decoding speed of the content or output speed of the display based on the critical value of the stream buffer and a state of the stream buffer.
Inventor(s): Liudmila Igorevna BURMAK of Moscow (RU) for samsung electronics co., ltd., Petr POHL of Moscow (RU) for samsung electronics co., ltd., Xenya Iurevna PETROVA of Moscow (RU) for samsung electronics co., ltd., Imran Kazbekovich NAVRUZBEKOV of Moscow (RU) for samsung electronics co., ltd., Alexey Viktorovich KLIUEV of Moscow (RU) for samsung electronics co., ltd.
IPC Code(s): H04N23/55, G02B5/20, G06T3/40, G06T15/00, G06V10/25, G06V10/56, H04N23/54
Abstract: a device for gathering image sets includes: n digital cameras including one or more ground truth cameras for capturing high quality ground truth images and one or more target cameras for capturing low quality target images, the n digital cameras being optically coupled via n−1 beam splitters, at least n−1 cameras of the n digital cameras being mounted on automatically adjustable mounts; and at least one computer readable storage device storing instructions executable by at least one processor. the instructions cause the at least one processor to adjust the at least n−1 cameras by actuating the automatically adjustable mounts on which the at least n−1 cameras are mounted; synchronize image capture by the digital cameras; and control the digital cameras to gather sets of n images. the at least n−1 cameras are adjusted based on at least one set of n images of the scene.
Inventor(s): Dongchan KIM of Suwon-si (KR) for samsung electronics co., ltd., Dongnam Byun of Suwon-si (KR) for samsung electronics co., ltd., Jaewook Shin of Suwon-si (KR) for samsung electronics co., ltd., Jinyoung Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/60, G06T7/246, G06T7/55, G06T7/73, H04N23/63
Abstract: provided are a method and an electronic device for generating a point cloud. the method includes obtaining, from at least one sensor of the electronic device, first sensing data corresponding to an object, obtaining a first point cloud corresponding to the object, based on the first sensing data, identifying, by using at least one artificial intelligence model, at least one outlier point indicating violation of at least one predefined rule in the first point cloud, and providing a re-photographing location guide for re-photographing the object, based on the at least one outlier point.
Inventor(s): Seongjae JI of Suwon-si (KR) for samsung electronics co., ltd., Sanghyun YEO of Suwon-si (KR) for samsung electronics co., ltd., Jaeseok LEE of Suwon-si (KR) for samsung electronics co., ltd., Jihyung HA of Suwon-si (KR) for samsung electronics co., ltd., Moonkyu KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaegyeong MA of Suwon-si (KR) for samsung electronics co., ltd., Byungduck SEO of Suwon-si (KR) for samsung electronics co., ltd., Sunghoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Jongho LEE of Suwon-si (KR) for samsung electronics co., ltd., Seungcheol JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/81, F24C15/00, H04N23/52
Abstract: a cooking apparatus includes a case, a cooking chamber formed inside the case, a camera configured to obtain an image inside of the cooking chamber, a transparent member, a camera cooling fan configured to blow air toward the camera, a motor configured to rotate the camera cooling fan, and a controller to be electrically connected to the camera and the motor. the controller is configured to operate the camera to obtain a first image inside of the cooking chamber, configured to identify foreign substance-related information of a lens of the camera or the transparent member based on the first image, and configured to control an operation of the motor to perform a cleaning mode, in which the camera cooling fan is rotated at a first rotation speed for a first rotation time, based on the determining that the foreign substance is present.
Inventor(s): Yang Ho Cho of Suwon-si (KR) for samsung electronics co., ltd., Kiwoo Lee of Suwon-si (KR) for samsung electronics co., ltd., Dong Kyung Nam of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/84, G06T5/00, G06T7/90, H01L27/146, H04N25/11
Abstract: an image sensor includes a color filter array including a first color filter including a first number of blue pass filtering elements, the first number of red pass filtering elements, and green pass filtering elements in a first pattern, wherein a number of the green pass filtering elements in the first pattern is twice the first number, and a second color filter including a second number of blue pass filtering elements, the second number of red pass filtering elements, and green pass filtering elements in a second pattern, wherein a number of green pass filtering elements in the second pattern is twice the second number, and the second number is greater than the first number. the second color filter may surround an area of the first color filter.
Inventor(s): Heesu Lee of Suwon-si (KR) for samsung electronics co., ltd., Daekwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Taeshick Wang of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/704, H01L27/146
Abstract: a camera device includes an image sensor including a pixel array and a logic circuit, with the camera device further comprising an optical module that includes a plurality of lenses arranged in a path of travel of light incident on the image sensor. the pixel array includes a plurality of pixels having a general pixel, a first autofocus pixel and a second autofocus pixel, and at least one of the plurality of lenses has an edge that extends in a first direction. a height of an upper surface of the microlens, included in the first autofocus pixel, is different from a height of an upper surface of the microlens included in the second autofocus pixel.
Inventor(s): Dongjae HAN of Suwon-si (KR) for samsung electronics co., ltd., Haneul JUNG of Suwon-si (KR) for samsung electronics co., ltd., YOUNGHYUN YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/78, H03K4/48
Abstract: disclosed is a ramp signal generator. the ramp signal generator includes: a first unit current source including first sub-unit current sources, and configured to output a first unit current during a first time period; and a second unit current source including second sub-unit current sources, and configured to output a second unit current during a second time period. the first sub-unit current sources are configured to operate according to first sub-ramp control signals, respectively. the second sub-unit current sources are configured to operate according to second sub-ramp control signals, respectively. n first sub-ramp control signals among the first sub-ramp control signals are activated, and m sub-ramp control signals among the second sub-ramp control signals are activated, n and m being different natural numbers.
Inventor(s): Seongkwan YANG of Suwon-si (KR) for samsung electronics co., ltd., Changtaek Kang of Suwon-si (KR) for samsung electronics co., ltd., Jonghan Kim of Suwon-si (KR) for samsung electronics co., ltd., Jaeha Park of Suwon-si (KR) for samsung electronics co., ltd., Hochul Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04R1/02, H01F7/02, H04R1/10, H04R9/04
Abstract: a speaker module includes a yoke plate, a first speaker including a first magnet coupled to the yoke plate, a diaphragm spaced apart from the yoke plate and a first coil coupled to the diaphragm, and a second speaker including a housing coupled to the yoke plate and on a side of the first speaker, a second coil provided in the housing and coupled to the yoke plate, and a second magnet spaced apart from the second coil in the housing and coupled to the housing.
Inventor(s): Kyungho JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W4/70, H04W12/06, H04W76/10, H04W88/08
Abstract: a method of operating an iot device comprising receiving a device change request from an iot server. the method includes releasing a connection between an internet-of-things (iot) device and a first device based on receiving the device change request, switching an operation of the iot device to a pairing mode to establish a wireless communication link, based on the releasing of the connection between the iot device and the first device. the method includes establishing a wireless communication link between the iot device and a second device while the iot device is in the pairing mode. the method includes identifying whether the second device is associated with the device change request, and receiving information about an access point (ap) connecting the second device and the iot server from the second device based on the second device being identified as being associated with the device change request.
Inventor(s): Nivedya Parambath SASI of Bangalore (IN) for samsung electronics co., ltd., Rohini RAJENDRAN of Bangalore (IN) for samsung electronics co., ltd., Rajavelsamy RAJADURAI of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W8/18, H04L41/082
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. embodiments herein is to provide a method for providing user consent for ue in a 5g network () by a ue (). the method includes receiving a request message from a network apparatus () to check with the ue () whether the network apparatus () can provide subscribed event information to a nwdaf (). the request message includes the subscribed event information and a consumer nf id to obtain consent from the ue (). further, the method includes determining, by the ue (), using the preconfigured data whether a consent can be provided for the subscribed event information to the nwdaf (). further, the method includes sending, by the ue (), a response message to the network apparatus (), wherein the response message comprises a consent indication allowing the network apparatus () to provide the subscribed event information to the nwdaf ().
Inventor(s): Sangho LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Sooeun SONG of Gyeonggi-do (KR) for samsung electronics co., ltd., Deokhui LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Jaehong YI of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W8/22
Abstract: a method by which a user equipment (ue) operates in a wireless communication system includes obtaining status information of the ue, identifying an execution mode of each function of a plurality of functions being executed by the ue, identifying at least one function whose execution mode is to be changed among the functions being executed by the ue, based on the status information of the ue, and changing the execution mode of the identified at least one function.
Inventor(s): Donggun KIM of Seoul (KR) for samsung electronics co., ltd., Seungri JIN of Suwon-si (KR) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd., Alexander SAYENKO of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H04W28/02, H04W28/06, H04W80/02
Abstract: according to the present invention, a method by which a terminal transmits a buffer status report (bsr) in a wireless communication system comprises the steps of: receiving, from a base station, a message including information for a bsr request; and triggering the bsr on the basis of the information; and transmitting the bsr to the base station. the triggered bsr is a periodic bsr, and the triggering step causes a timer for the periodic bsr to expire. the information for a bsr request is indicated by a polling field included in a medium access control (mac) sub-head.
Inventor(s): Junho Lee of Suwon si (KR) for samsung electronics co., ltd., Jaein Kim of Suwon si (KR) for samsung electronics co., ltd., Jinwoo Oh of Suwon si (KR) for samsung electronics co., ltd., Hongsik Yoon of Suwon si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W28/06, H04L5/00
Abstract: provided is an operating method of a wireless communication device, the method including receiving a channel state information reference signal (csi-rs) from a base station, generating channel information by estimating a channel between the wireless communication device and the base station, based on the csi-rs, and reporting the channel information to the base station, wherein the generating of the channel information includes generating first compressed data by compressing, in a spatial domain, channel characteristic information of a subband in which the csi-rs is received, generating second compressed data by compressing the first compressed data in a frequency domain by using a first discrete fourier transform (dft) function having a size corresponding to the number of subbands in which the csi-rs is received in a bandwidth part (bwp) for communication with the base station, and generating the channel information, based on the second compressed data.
Inventor(s): Hoyeon LEE of Suwon-si (KR) for samsung electronics co., ltd., Sangsoo JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W36/00, H04W36/14
Abstract: a method performed by a user equipment (ue) in a wireless communication system is provided. the method includes transmitting, to an access and mobility function (amf), a registration request message for moving to a first public land mobile network (plmn) from a second plmn, receiving, from the amf, a registration accept message including first single-network slice selection assistance information (s-nssai) corresponding to the first plmn of the amf, determining whether second s-nssai associated with a protocol data unit (pdu) session established for the ue matches to the first s-nssai, wherein the second s-nssai corresponds to the second plmn, and locally updating the pdu session based on a result of the determining.
Inventor(s): Milos TESANOVIC of Staines (GB) for samsung electronics co., ltd.
IPC Code(s): H04W40/22, H04W28/02
Abstract: a method of operating a first node in a wireless communication network is provided. the method comprises: receiving an ingress data packet; determining routing; and transmitting the ingress data packet. determining routing may comprise determining a next hop node for the ingress data packet taking account of first level routing information indicating target next hop nodes. alternatively, determining routing may comprise determining, for a target next hop node, a channel on which to transmit the ingress data packet taking account of second level routing information.
Inventor(s): Changsung LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Suhwook KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Hyeondeok JANG of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W48/08, H04W24/10
Abstract: the present disclosure relates to a 5g communication system or a 6g communication system for supporting higher data rates beyond a 4g communication system such as long term evolution (lte). a method performed by a base station in a wireless communication system may include determining a first synchronization signal block (ssb) beam sweeping pattern, based on distribution of a plurality of user equipments (ues), transmitting information indicating the first ssb beam sweeping pattern to a neighbor base station and the plurality of ues, transmitting an ssb to the plurality of ues, based on the first ssb beam sweeping pattern, receiving information about an ssb beam sweeping pattern of the neighboring base station from the neighbor base station, receiving parameter information for updating the first ssb beam sweeping pattern from a core network, updating the first ssb beam sweeping pattern to a second ssb beam sweeping pattern, based on second location information received in response to a request transmitted to the plurality of ues, based on the parameter information, transmitting information indicating the second ssb beam sweeping pattern to the neighbor base station and the plurality of ues, and transmitting an ssb to the plurality of ues, based on the second ssb beam sweeping pattern.
Inventor(s): Suha YOON of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok RYU of Suwon-si (KR) for samsung electronics co., ltd., Youngbum KIM of Suwon-si (KR) for samsung electronics co., ltd., Seho MYUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W56/00, H04L27/26, H04W76/28
Abstract: the present disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. in addition, the present disclosure relates to a method carried out by a base station of a wireless communication system, and a device for carrying out same, the method comprising the steps of: determining whether a frequency band operated by a base station uses a bandwidth that is narrower than a preset bandwidth; if a bandwidth that is narrower than the preset bandwidth is used, determining a subcarrier spacing (scs) that is narrower than a preset scs; generating a synchronization signal block (ssb) using the determined scs; and transmitting the ssb, wherein the determined scs is smaller than 15 khz.
Inventor(s): Dahae Chong of Suwon-si (KR) for samsung electronics co., ltd., Gunyoung Ko of Suwon-si (KR) for samsung electronics co., ltd., Beomkon Kim of Suwon-si (KR) for samsung electronics co., ltd., Joohyun Do of Suwon-si (KR) for samsung electronics co., ltd., Myungjoon Shim of Suwon-si (KR) for samsung electronics co., ltd., Yujin Sim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W56/00, H04B17/318, H04B17/336
Abstract: a device may receive a first synchronization signal including at least one first synchronization signal block (ssb) from a serving base station and a second synchronization signal including at least one second ssb from a neighboring base station, where the second synchronization signal overlaps a slot through which data is transmitted from the serving base station. additionally, the device may measure a first received power and a received reference signal received power (rsrp) of each of the first synchronization signal and the second synchronization signal received on the slot. the device may calculate an effective rsrp corresponding to at least one additional ssb received from the serving base station, the effective rsrp calculated based on a correlation power, where the correlation power is based on a cross correlation between the received rsrp, the first received power, the data, and the at least one additional ssb.
Inventor(s): Woojae JEONG of Gyeonggi-do (KR) for samsung electronics co., ltd., Donggu KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Seunghyun LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Jungsoo JUNG of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W56/00, H04B7/04
Abstract: the present disclosure relates to a fifth generation (5g) communication system or a sixth generation (6g) communication system for supporting higher data rates beyond a 4g communication system such as long term evolution (lte). in a wireless communication system, a method performed by a base station includes identifying a delay time caused by a radio unit (ru) buffer, determining an ris offset value for synchronization of signals transmitted to a reconfigurable intelligent surface (ris), based on the delay time caused by the ru buffer, transmitting, to the ris, a first signal to be transmitted to a terminal through a reflection plane of the ris at a first time point, and transmitting, to the ris, a second signal for controlling a reflection pattern of the ris at a second time point to which the ris offset value is applied.
Inventor(s): Mythri HUNUKUMBURE of Staines (GB) for samsung electronics co., ltd., David Gutierrez ESTEVEZ of Staines (GB) for samsung electronics co., ltd.
IPC Code(s): H04W64/00, H04W28/02
Abstract: a method of performing localisation of a user equipment, ue, in a telecommunication network is provided. the method comprises receiving from a second network entity a location request, and identifying multiple quality of service, qos, class for location services comprising a plurality of qos requirements based on the location request.
Inventor(s): Sapan Pramodkumar SHAH of Bangalore (IN) for samsung electronics co., ltd., Basavaraj Jayawant PATTAN of Bangalore (IN) for samsung electronics co., ltd., Narendranath Durga TANGUDU of Bangalore (IN) for samsung electronics co., ltd., Nishant GUPTA of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W64/00
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. embodiments herein provide a method for location management in off-network. the method includes sending, by a first ue (a), a request including a configuration to a second ue (b), where the configuration allows the second ue (b) to report location information of the second ue (b) to the first ue (a) in off-network. the method includes storing, by the second ue (b), the configuration and sending a response to first ue (a), where the first ue (a) acknowledges to the second ue (b) upon on receiving the response from the second ue (b). the method includes detecting, by the second ue (b), a trigger of a location reporting event based on the configuration, and reports the location information of the second ue (b) to the first ue (a) in the off-network, where the first ue (a) acknowledges to the second ue (b) upon receiving the location information.
Inventor(s): Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W68/02
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by a user equipment (ue) in a wireless communication system is provided. the method may include: receiving, from a base station, paging early indication (pei) configuration information including a parameter indicating a number of ue identity (id) based paging subgroups; determining a paging subgroup id corresponding to the ue, based on a maximum value of the parameter; monitoring pei information on a pei occasion, based on the pei configuration information; and in case that the pei information indicates the paging subgroup id, monitoring paging downlink control information (dci) on a paging occasion (po).
Inventor(s): Hyoungjin LIM of Suwon-si (KR) for samsung electronics co., ltd., Song KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyeri BANG of Suwon-si (KR) for samsung electronics co., ltd., Jongho OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/04, H04L27/26
Abstract: a method performed by a distributed unit (du) in a wireless communication system is provided. the method includes identifying a subblock in one section. the method includes generating a control plane (c-plane) message including section extension information including modulation compression information corresponding to the subblock. the method includes transmitting, to a radio unit (ru), the c-plane message through a fronthaul interface.
Inventor(s): Jinwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyoungjoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Minho YANG of Suwon-si (KR) for samsung electronics co., ltd., Taeyoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Euichang JUNG of Suwon-si (KR) for samsung electronics co., ltd., Chaeman LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/0453, H04L5/00, H04W24/10, H04W76/30
Abstract: an electronic device may include at least one antenna, a wireless communication circuit configured to support a first communication protocol and a second communication protocol, and at least one processor. the at least one processor may control the wireless communication circuit to communicate with a base station through at least one first cell using the first communication protocol in at least one frequency band, and may control the wireless communication circuit to receive, from the base station, configuration information on a second cell using the second communication protocol different from the first communication protocol. the at least one processor may determine, based on the configuration information on the second cell, whether a frequency band of the second cell is included in the at least one frequency band, may determine whether a blocking condition is satisfied, and may control the wireless communication circuit to transmit a measurement result of the second cell to the base station or control the measurement result of the second cell not to be reported to the base station.
Inventor(s): Hongsik YOON of Suwon-si (KR) for samsung electronics co., ltd., Jungmin PARK of Suwon-si (KR) for samsung electronics co., ltd., Jonghyun BANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/232, H04W72/56, H04W76/20
Abstract: an operating method of a terminal to communicate with a base station, includes: detecting at least one overlapped third control channel element (cce) in a plurality of first cces included in first search spaces corresponding to a first physical downlink control channel (pdcch) received from a first transmission and reception point (trp) of the base station, and in a plurality of second cces included in second search spaces corresponding to a second pdcch received from the first trp and a second trp of the base station; determining, based on the at least one overlapped third cce, object cces from the plurality of first cces and the plurality of second cces; and performing channel estimation of the object cces by using a first memory.
Inventor(s): Youngchan WOO of Suwon-si (KR) for samsung electronics co., ltd., Jihye KWON of Suwon-si (KR) for samsung electronics co., ltd., Joayoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Miyoung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/25, G06F3/0482, G06F9/54
Abstract: a mobile device and a method of controlling the same. a control method according to an embodiment comprises displaying a user interface (ui) screen which includes a plurality of ui elements, detecting a first user input associated with a first ui element among the plurality of ui elements, identifying one or more identification codes associated with the first ui element based on the detecting of the first user input, detecting one or more neighboring devices based on the one or more identification codes, displaying a window which includes one or more ui elements associated with the one or more neighboring devices, detecting a second user input associated with a second ui element among the one or more ui elements, determining a neighboring device associated with the second ui element, among the one or more neighboring devices, as a controlled device controllable through the second ui element, based on detecting of the second user input, and transmitting a control command related to the first ui element to the neighboring device determined as the controlled device.
Inventor(s): Hyunseok RYU of Suwon-si (KR) for samsung electronics co., ltd., Jonghyun BANG of Suwon-si (KR) for samsung electronics co., ltd., Cheolkyu SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jeongho YEO of Suwon-si (KR) for samsung electronics co., ltd., Jinyoung OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/53, H04L5/00, H04W8/24, H04W52/24, H04W52/36, H04W56/00, H04W72/044, H04W72/20
Abstract: a method performed by a terminal in a wireless communication system is provided. the method includes receiving, from at least one other terminal, at least one physical sidelink shared channel (pssch), in response to the receiving of the at least one pssch, determining the number of at least one physical sidelink feedback channel (psfch) based on the maximum number of the at least one psfch for simultaneous transmission, and transmitting, to the at least one other terminal, one or more psfchs, based on the number of the at least one psfch.
Inventor(s): Pavan Kumar DEVARAYANIGARI of Bengaluru (IN) for samsung electronics co., ltd., Rohit KUMAR of Bengaluru (IN) for samsung electronics co., ltd., Shalini GOVIL of Bengaluru (IN) for samsung electronics co., ltd., Pushpa RAMU of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): H04W76/19, H04L5/00
Abstract: embodiments herein disclose methods and devices for managing data traffic on a receiver. a method disclosed herein includes detecting, by a receiver, at least one out of order radio link control (rlc) protocol data unit (pdu) in a plurality of rlc pdus received from a transmitter, performing, by the receiver, a recovery action based on a packet data convergence protocol (pdcp) reordering time to recover the at least one out of order rlc pdu; and causing, by the receiver, an rlc layer to send a plurality of rlc service data units (sdus) to a higher layer after the performing the recovery action, the plurality of rlc sdus corresponding to the plurality of rlc pdus.
Inventor(s): Euichang JUNG of Suwon-si (KR) for samsung electronics co., ltd., Youngrok JANG of Suwon-si (KR) for samsung electronics co., ltd., Suha YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/19, H04W24/08, H04W72/1268, H04W72/1273, H04W72/232, H04W76/20
Abstract: the present disclosure relates to a communication system. the present disclosure may be applied to intelligent services on the basis of 5g communication technology and iot-related technology. according to the present disclosure, a method performed by a terminal may comprise the steps of: receiving an rrc message, including information on one or more bfd sets, from a base station; identifying whether beam failure is detected for one or more reference signals included in the one or more bfd sets; when beam failure is detected for at least one of the one or more bfd sets, identifying at least one candidate beam reference signal on the basis of a candidate beam set associated with the bfd sets for which beam failure is detected; and transmitting a bfr request message including information about the at least one candidate beam reference signal.
Inventor(s): Junyung YI of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngbum KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Hyunseok RYU of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngrok JANG of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/28, H04W52/02
Abstract: the disclosure relates to a 5g communication system or a 6g communication system for supporting higher data rates beyond a 4g communication system such as lte. a method performed by a bs in a wireless communication system includes transmitting, to a ue, via an rrc signaling, first information configuring a dtx for an energy saving of the base station; transmitting, to the ue, dci indicating an activation or deactivation of the dtx; and transmitting, to the ue, a downlink signal based on the activation or deactivation of the dtx.
Inventor(s): Jieun KIM of Suwon-si (KR) for samsung electronics co., ltd., Eunha CHOI of Suwon-si (KR) for samsung electronics co., ltd., Joayoung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05B47/11, G06T7/90, H05B45/10, H05B45/20
Abstract: a lighting apparatus including a lighting module configured to emit light; and at least one processor configured to determine a color and a brightness of a current scene of content displayed on a display apparatus, and to control the lighting module to emit, in a space in which the display apparatus is located, light with a color and brightness corresponding to the determined color and brightness of the current scene of the content.
Inventor(s): Seunghui SUNWOO of Suwon-si (KR) for samsung electronics co., ltd., Suyoun KIM of Suwon-si (KR) for samsung electronics co., ltd., Youngmin BAE of Suwon-si (KR) for samsung electronics co., ltd., Daekyu LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K5/00, H04M1/02, H05K5/03
Abstract: an electronic device is provided. the electronic device includes a foldable display, a decoration member made of a resin material to surround at least a portion of the foldable display, a support member configured to support the foldable display and including a metal area connected to the decoration member, and a conductive member disposed on the decoration member and electrically connected to the metal area. the conductive member may include a first conductive member arranged to face the support member and a second conductive member arranged parallel to the first conductive member and electrically connected to the first conductive member.
Inventor(s): Jeewoong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B10/00, H01L23/48, H01L29/06, H01L29/417, H01L29/423, H01L29/786
Abstract: a semiconductor memory device includes a substrate including first and second surfaces opposite to each other, a first active pattern on the first surface, a first channel pattern on the first active pattern and a first source/drain pattern connected to the first channel pattern, a gate electrode provided on the first channel pattern and extending in a first direction, the gate electrode adjacent to the first source/drain pattern in a second direction intersecting the first direction, a shared contact provided under the first source/drain pattern and the gate electrode and electrically connecting the first source/drain pattern and the gate electrode to each other, and a backside metal layer on the second surface.
20240138137.SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jung Gun YOU of Suwon-si (KR) for samsung electronics co., ltd., Sug Hyun SUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B10/00, H01L29/06, H01L29/08, H01L29/423, H01L29/775
Abstract: a semiconductor device includes a substrate including first and second regions; a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern, a height of the second lower pattern being identical to a height of the first lower pattern, and second sheet patterns; a first gate structure including a first gate insulating film and a first gate electrode; a second gate structure including a second gate insulating film, and a second gate electrode, a width of the second gate electrode being greater than a width of the first gate electrode; a first source/drain pattern on the first lower pattern and connected to the first sheet patterns; and a second source/drain pattern on the second lower pattern and connected to the second sheet patterns, wherein a number of first sheet patterns is smaller than a number of second sheet patterns.
Inventor(s): Giyong Chung of Seoul (KR) for samsung electronics co., ltd., Youngjin Kwon of Gwacheon-si (KR) for samsung electronics co., ltd., Dongseog Eun of Seongnam-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: a vertical-type nonvolatile memory device has a multi-stack structure with reduced susceptibility to mis-alignment of a vertical channel layer. this nonvolatile memory device includes: (i) a main chip area including a cell area and an extension area arranged to have a stepped structure, with the cell area and the extension area formed in a multi-stack structure, and (ii) an outer chip area, which surrounds the main chip area and includes a step key therein. the main chip area includes a first layer on a substrate and a second layer on the first layer. a lower vertical channel layer is arranged in the first layer. the step key includes an alignment vertical channel layer, and a top surface of the alignment vertical channel layer is lower than a top surface of the lower vertical channel layer.
20240138142.SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jul Pin PARK of Suwon-si (KR) for samsung electronics co., ltd., Jae Joon SONG of Suwon-si (KR) for samsung electronics co., ltd., Heon Jun HA of Suwon-si (KR) for samsung electronics co., ltd., Dong-Sik PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00, H01L23/528
Abstract: disclosed is a semiconductor memory device including a peripheral gate structure on a substrate, bitlines disposed on the peripheral gate structure and extending in a first direction, a protruding insulating pattern including channel trenches, extending in a second direction intersecting the first direction, channel structures disposed on the bitlines in the channel trenches and including a metal oxide, first wordlines disposed on the channel structures and extending in the second direction, second wordlines disposed on the channel structures, extending in the second direction, and spaced apart from the first wordlines in the first direction, landing pads disposed on the channel structures and connected to the channel structures, pad separation patterns disposed on the protruding insulating pattern and separating the landing pads, first passage patterns connected to the protruding insulating pattern through pad separation patterns and formed of an oxide-based insulating material, and data storage patterns disposed on the landing pads.
20240138143.SEMICONDUCTOR MEMORY DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Taejin PARK of Yongin-si (KR) for samsung electronics co., ltd., Kyujin KIM of Seoul (KR) for samsung electronics co., ltd., Chulkwon PARK of Hwaseong-si (KR) for samsung electronics co., ltd., Sunghee HAN of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
Abstract: a semiconductor memory device includes a substrate comprising a memory cell region and a dummy cell region surrounding the memory cell region, the memory cell region including a plurality of memory cells, a plurality of active regions in the memory cell region, each of the plurality of active regions extending in a long axis direction, the long axis direction being a diagonal direction with respect to a first horizontal direction and a second horizontal direction orthogonal to the first horizontal direction, each of the plurality of active regions having a first width in a short axis direction orthogonal to the long axis direction, and a plurality of dummy active regions in the dummy cell region, each extending in the long axis direction, each of the plurality of dummy active regions having a second width greater than the first width in the short axis direction.
Inventor(s): JIWON KIM of Suwon-si (KR) for samsung electronics co., ltd., Dohyung Kim of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Sukkang Sung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B80/00, H01L23/00, H01L25/00, H01L25/065, H01L25/18
Abstract: a three-dimensional semiconductor memory device may include a peripheral structure and a cell structure on the peripheral structure. the cell structure may include a substrate having first and second surfaces, which are opposite to each other, a stack including gate electrodes, which are stacked on the first surface of the substrate, an insulating layer on the second surface of the substrate, a penetration contact plug penetrating the first surface of the substrate, a first gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and spaced apart from the penetration contact plug, a second gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and connected to the penetration contact plug, a first gapfill spacer between the first gapfill conductive pattern and the substrate, and a second gapfill spacer between the second gapfill conductive pattern and the substrate.
20240138166.IMAGE SENSORS AND ELECTRONIC DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Younhee LIM of Suwon-si (KR) for samsung electronics co., ltd., Kyung Bae PARK of Suwon-si (KR) for samsung electronics co., ltd., Sungyoung YUN of Suwon-si (KR) for samsung electronics co., ltd., Juhyung LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K39/32
Abstract: an image sensor includes a semiconductor substrate in which a plurality of photo-sensing elements are integrated, an organic active layer on the semiconductor substrate, an interlayer between the organic active layer and the semiconductor substrate, and optionally a color filter layer on the organic active layer. the organic active layer includes a singlet fission material. the interlayer includes a dielectric selected from an oxide, a nitride, oxynitride, fluoride, oxyfluoride, and any combination thereof.
Inventor(s): Jaehyeong LEE of Suwon-si (KR) for samsung electronics co., ltd., Gilho LEE of Pohang-si (KR) for samsung electronics co., ltd., Jinhyoun KANG of Suwon-si (KR) for samsung electronics co., ltd., Jaeho SHIN of Suwon-si (KR) for samsung electronics co., ltd., Seunghan LEE of Pohang-si (KR) for samsung electronics co., ltd., Daeseok HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10N69/00
Abstract: a superconducting quantum interferometric device (squid) includes: a conductive material region formed on a partial region of a substrate; a first superconducting material layer including a first loop including first and second extension units that are spaced apart from each other to form a proximity josephson junction and that form a stack structure with the conductive material region; a second superconducting material layer including a second loop including first and second end units spaced apart from each other; and a tunnel josephson junction formed by a stack structure including a tunnel thin film layer forming and the first and second end units, wherein at least a portion of the second loop forms a stack structure with the first loop.
SAMSUNG ELECTRONICS CO., LTD. patent applications on April 25th, 2024
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