Rohm co., ltd. (20240282851). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yoshinori Fukuda of Kyoto-shi (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240282851 titled 'SEMICONDUCTOR DEVICE
The present disclosure introduces a semiconductor device with unique features.
- The semiconductor device comprises a main transistor, a monitoring transistor, and a pair of separation portions located in a gate space between adjacent trench gate structures.
- There is a body region divided into a monitoring body region between the separation portions and a main body region on the opposite side of the monitoring body region across the separation portions.
- The trench gate structures consist of a first gate structure next to the monitoring body region and the main body region in a first direction, and a second gate structure adjacent to the separation portions.
- The first gate structure is a multi-electrode structure, while the second gate structure is a single-electrode structure.
Potential Applications: - Power electronics - Semiconductor industry - Electrical engineering
Problems Solved: - Improved performance of semiconductor devices - Enhanced monitoring capabilities - Efficient use of gate space
Benefits: - Higher efficiency - Better control and monitoring - Increased reliability
Commercial Applications: Title: Advanced Semiconductor Devices for Power Electronics This technology can be used in various commercial applications such as power supplies, electric vehicles, renewable energy systems, and industrial automation.
Questions about the technology: 1. How does this semiconductor device improve monitoring capabilities compared to traditional devices? 2. What are the potential challenges in implementing this technology in commercial products?
Frequently Updated Research: Researchers are constantly exploring new materials and designs to further enhance the performance and efficiency of semiconductor devices in various applications. Stay updated on the latest advancements in this field for potential future developments.
Original Abstract Submitted
the present disclosure provides a semiconductor device. the semiconductor device includes a main transistor, a monitoring transistor and a pair of separation portions selectively formed in a gate space sandwiched between adjacent trench gate structures. a body region is separated into a monitoring body region sandwiched between the pair of separation portions and a main body region at an opposite side of the monitoring body region across the pair of separation portions. the trench gate structures include: a first gate structure adjacent to the monitoring body region and the main body region along a first direction; and a second gate structure adjacent to the pair of separation portions. the first gate structure is a multi-electrode structure and the second gate structure is a single-electrode structure.
