Rohm co., ltd. (20240282846). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shinya Umeki of Kyoto-shi (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240282846 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a semiconductor layer with opposing first and second principal surfaces, an IGBT region, a diode region, and a first impurity region of a first conductivity type.
- The semiconductor device features an IGBT region and a diode region formed within the semiconductor layer.
- The device includes a first impurity region of a first conductivity type located inside the semiconductor layer.
- The IGBT region and diode region are adjacent to each other within the semiconductor layer.
- The first impurity region plays a crucial role in the functionality of the semiconductor device.
- The design of the semiconductor device allows for efficient operation and performance.
Potential Applications: - Power electronics - Renewable energy systems - Electric vehicles - Industrial automation - Consumer electronics
Problems Solved: - Improved efficiency in power conversion - Enhanced performance of electronic devices - Increased reliability of semiconductor components
Benefits: - Higher energy efficiency - Better power management - Increased reliability and durability - Enhanced overall performance of electronic systems
Commercial Applications: Title: "Advanced Semiconductor Devices for Power Electronics Applications" This technology can be utilized in various industries such as renewable energy, automotive, industrial automation, and consumer electronics. The market implications include improved energy efficiency, enhanced performance, and increased reliability of electronic systems.
Questions about Semiconductor Devices: 1. How do semiconductor devices impact the efficiency of power conversion?
- Semiconductor devices play a crucial role in improving the efficiency of power conversion by controlling the flow of electrical current.
2. What are the key differences between IGBT and diode regions in semiconductor devices?
- The IGBT region is responsible for switching and amplifying signals, while the diode region allows current to flow in one direction.
Original Abstract Submitted
provided is a semiconductor device including a semiconductor layer which has opposing first and second principal surfaces, an igbt region which is formed in the semiconductor layer, a diode region which is formed in the semiconductor layer and adjacent to the igbt region, a first impurity region of a first conductivity type which is formed inside the semiconductor layer.
