Robert bosch gmbh (20240213366). VERTICAL TRANSISTORS AND METHOD FOR PRODUCING THE SAME simplified abstract
Contents
VERTICAL TRANSISTORS AND METHOD FOR PRODUCING THE SAME
Organization Name
Inventor(s)
Christian Huber of Ludwigsburg (DE)
Jens Baringhaus of Sindelfingen (DE)
Roland Puesche of Rommelsbach (DE)
VERTICAL TRANSISTORS AND METHOD FOR PRODUCING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213366 titled 'VERTICAL TRANSISTORS AND METHOD FOR PRODUCING THE SAME
Simplified Explanation: The patent application describes a vertical transistor with an outer region and a membrane region, where the semiconductor substrate is structured to have a rear trench in the membrane region. A masking layer is used to control the lateral extension of the layer stack in the membrane region.
- The patent describes a vertical transistor design with specific regions for different functions.
- The semiconductor substrate is arranged in the outer region and structured to have a rear trench in the membrane region.
- A masking layer is used to control the lateral extension of the layer stack, which includes drift layers, component-defining layers, and control terminals like gate electrodes.
Potential Applications: 1. Semiconductor devices manufacturing. 2. Power electronics. 3. Integrated circuits.
Problems Solved: 1. Controlling the lateral extension of the layer stack in a vertical transistor. 2. Enhancing the performance and efficiency of semiconductor devices.
Benefits: 1. Improved control over transistor design. 2. Enhanced functionality and performance of semiconductor devices. 3. Potential for increased efficiency in power electronics.
Commercial Applications: Vertical transistors with controlled lateral extension can be used in various semiconductor devices, power electronics, and integrated circuits, leading to more efficient and high-performance products in the market.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching vertical transistor designs, semiconductor substrate structuring, and masking layer techniques in semiconductor device manufacturing.
Frequently Updated Research: Researchers are continually exploring new ways to optimize vertical transistor designs for better performance and efficiency in semiconductor devices.
Questions about Vertical Transistors: 1. How do vertical transistors differ from traditional horizontal transistors? 2. What are the key advantages of using a masking layer in controlling the lateral extension of the layer stack in a vertical transistor?
Original Abstract Submitted
a vertical transistor with an outer region and a membrane region. at least a portion of a semiconductor substrate is arranged in the outer region. the semiconductor substrate is structured in such a way that a rear trench is arranged in the membrane region. the rear trench is free of semiconductor substrate. a masking layer is arranged in the outer region and/or in the membrane region. a layer stack is arranged in the membrane region, wherein the layer stack includes at least one drift layer, at least one component-defining layer system, and at least one control terminal, preferably a gate electrode. the masking layer is configured such that the region on the masking layer is substantially free of the layer stack so that the lateral extension of the layer stack is adjusted by means of the masking layer.
