Rheinisch-Westfälische Technische Hochschule (RWTH Aachen) (20240304706). QUBIT ELEMENT simplified abstract
Contents
QUBIT ELEMENT
Organization Name
Rheinisch-Westfälische Technische Hochschule (RWTH Aachen)
Inventor(s)
[[:Category:Matthias K�nne of Aachen (DE)|Matthias K�nne of Aachen (DE)]][[Category:Matthias K�nne of Aachen (DE)]]
QUBIT ELEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304706 titled 'QUBIT ELEMENT
The abstract describes a qubit element with a quantum well structure that forms a quantum dot. The structure includes electrodes that restrict the movement of charge carriers in multiple directions, creating the quantum dot. Additionally, a backgate is positioned against the quantum well structure.
- Quantum well structure with a quantum dot formation
- Electrode arrangement restricting charge carrier movement in multiple directions
- Backgate positioned against the quantum well structure
Potential Applications: - Quantum computing - Nanotechnology - Semiconductor industry
Problems Solved: - Controlling charge carrier movement in quantum structures - Enhancing qubit stability
Benefits: - Improved qubit performance - Enhanced quantum computing capabilities
Commercial Applications: Title: Quantum Dot Technology for Advanced Computing This technology can be used in quantum computers, nanotechnology devices, and semiconductor manufacturing, leading to faster and more efficient computing systems.
Frequently Updated Research: Researchers are continuously exploring new ways to optimize quantum dot structures for better qubit performance and stability.
Questions about Quantum Dot Technology: 1. How does the electrode arrangement restrict charge carrier movement in the quantum well structure? 2. What are the potential challenges in scaling up this technology for commercial applications?
Original Abstract Submitted
qubit element (), comprising: quantum well structure (), within which a quantum well () is formed along a first direction (x), an electrode arrangement () arranged spaced apart from the quantum well structure () in the first direction (x) and adapted to restrict a movement of a charge carrier in the quantum well () in and against a second direction (y) and in and against a third direction (z), in order to form a quantum dot (), wherein the first direction (x), the second direction (y) and the third direction (z) are respectively perpendicular to each other in pairs, a backgate () arranged spaced apart from the quantum well structure () against the first direction (x).
