ROHM CO., LTD. patent applications on August 22nd, 2024

Patent Applications by ROHM CO., LTD. on August 22nd, 2024

ROHM CO., LTD.: 29 patent applications

ROHM CO., LTD. has applied for patents in the areas of H01L23/00 (15), H01L23/31 (11), H01L23/495 (7), H01L23/29 (5), H01L23/498 (5) H01L25/0655 (2), H01L23/49541 (2), G05F1/575 (1), H03K19/018507 (1), H03K17/6872 (1)

With keywords such as: surface, portion, main, semiconductor, direction, electrode, terminal, layer, side, and device in patent application abstracts.

Patent Applications by ROHM CO., LTD.

20240281014. POWER CONTROL DEVICE AND POWER SUPPLY DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Tatsuya OKADA of Kyoto (JP) for rohm co., ltd.

IPC Code(s): G05F1/575, G05F3/26

CPC Code(s): G05F1/575

Abstract: a power control device serves as a main controlling agent in a power supply device which generates an output voltage from an input voltage using an output transistor, and includes: an output feedback circuit configured to receive the output voltage or a feedback voltage corresponding to it to generate a driving signal for the output transistor; a current feedback signal generation circuit configured to generate a current feedback signal for adjusting the phase characteristics of the output feedback circuit according to an output current of the power supply device; and a delay circuit configured to delay a change in the current feedback signal in response to a change in the output current.

20240282593. MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Yuki NAKANO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L21/56, H01L21/78, H01L23/00

CPC Code(s): H01L21/565

Abstract: a manufacturing method for a semiconductor device includes a step of preparing a wafer structure that includes a wafer having a main surface, and a main surface electrode arranged on the main surface, a step of forming a terminal electrode on the main surface electrode, a step of preparing a mask member that has a frame portion demarcating an opening portion exposing an inner portion of the main surface and configuring to overlap a peripheral edge portion of the main surface, and arranging the mask member on the main surface such that the frame portion overlaps the peripheral edge portion of the main surface, a step of supplying a sealant including a liquid thermosetting resin into the opening portion such as to cover the terminal electrode and a step of forming a sealing insulator by thermally curing the sealant.

20240282634. MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Yuki NAKANO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L21/78, H01L21/56, H01L23/00

CPC Code(s): H01L21/78

Abstract: a manufacturing method for a semiconductor device includes a step of preparing a wafer source that has a first main surface on one side and a second main surface on the other side, a step of forming a main surface electrode on the first main surface, a step of forming a terminal electrode on the main surface electrode, a step of forming a sealing insulator that covers a periphery of the terminal electrode on the first main surface such as to expose a part of the terminal electrode, and a step of cutting the wafer source in a horizontal direction along the first main surface from an intermediate portion of a thickness range of the wafer source, and separating the wafer source into a sealed wafer on the sealing insulator side and an unsealed wafer on the second surface side.

20240282656. SEMICONDUCTOR MODULE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Yuki NAKANO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/31, H01L23/00, H01L23/29

CPC Code(s): H01L23/3135

Abstract: a semiconductor module includes a housing that has a housing space, a semiconductor device that is arranged in the housing space, and that has a chip having a main surface, a main surface electrode arranged on the main surface, a terminal electrode arranged on the main surface electrode, and a sealing insulator covering a periphery of the terminal electrode on the main surface such as to expose a part of the terminal electrode, and an insulating gel-like filling agent that is filled in the housing space such as to contact the sealing insulator, and that seals the semiconductor device in the housing space.

20240282657. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Yuki NAKANO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/31, H01L23/00, H01L23/29

CPC Code(s): H01L23/3157

Abstract: a semiconductor device includes a chip that has a main surface, a main surface electrode that is arranged on the main surface, a terminal electrode that is arranged on the main surface electrode such as to expose a part of the main surface electrode; and a sealing insulator that covers a periphery of the terminal electrode such as to expose a part of the terminal electrode, and that has a portion directly covering the main surface electrode.

20240282675. POWER MODULE SEMICONDUCTOR DEVICE AND INVERTER EQUIPMENT, AND FABRICATION METHOD OF THE POWER MODULE SEMICONDUCTOR DEVICE, AND METALLIC MOLD_simplified_abstract_(rohm co., ltd.)

Inventor(s): Toshio HANADA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/482, H01L21/50, H01L21/56, H01L23/00, H01L23/31, H01L23/373, H01L23/498, H01L23/538, H01L25/07, H01L25/11, H01L25/18, H02M7/00

CPC Code(s): H01L23/482

Abstract: the power module semiconductor device () includes: an insulating substrate (); a first pattern () (d) disposed on the insulating substrate (); a semiconductor chip (q) disposed on the first pattern; a power terminal (st, dt) and a signal terminal (cs, g, ss) electrically connected to the semiconductor chip; and a resin layer () configured to cover the semiconductor chip and the insulating substrate. the signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.

20240282676. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Ryotaro KAKIZAKI of Kyoto-shi (JP) for rohm co., ltd., Yasumasa KASUYA of Kyoto-shi (JP) for rohm co., ltd., Koshun SAITO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/495, H01L23/00, H01L23/31

CPC Code(s): H01L23/49513

Abstract: a semiconductor device includes a semiconductor element, a lead and a sealing resin. the lead includes a die pad and terminal. the die pad includes a lead obverse surface facing a first side in a thickness direction for mounting the semiconductor element, and a lead reverse surface facing a second side in the thickness direction. the sealing resin includes a first resin surface facing the first side in the thickness direction, a second resin surface facing the second side in the thickness direction, and a third resin surface facing a first side in a first direction orthogonal to the thickness direction. the sealing covers resin the semiconductor element and a part of the die pad. the lead reverse surface includes a portion exposed from the second resin surface and located on the first side in the first direction from the third resin surface as viewed in the thickness direction.

20240282677. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Masaaki MORI of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/495, H01L23/00, H01L23/29, H01L23/31

CPC Code(s): H01L23/49541

Abstract: a semiconductor device includes a semiconductor element; a first lead including a die pad portion and a first terminal portion, and a sealing resin. a first lead reverse surface is exposed from a second resin surface. the first terminal portion includes a first portion extending outward from a third resin surface to a first side in an x direction, a second portion located on a first side in a z direction relative to the first portion and used for mounting, and a third portion interposed between the first portion and the second portion. the second portion overlaps with the sealing resin as viewed in the z direction.

20240282678. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Ryotaro KAKIZAKI of Kyoto-shi (JP) for rohm co., ltd., Yasumasa KASUYA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/495, H01L23/00, H01L23/29, H01L23/31

CPC Code(s): H01L23/49541

Abstract: a semiconductor device includes: a semiconductor element; a first lead including a die pad portion and a first terminal portion; and a sealing resin. a first lead reverse surface is exposed from a second resin surface and spaced apart from a third resin surface in a first direction. the first terminal portion includes a first portion and a second portion. only one set of the first portion passes through the third resin surface. the first portion is spaced apart from the second resin surface in a z direction. the second portion is located on a first side in the z direction relative to the first portion and used for mounting.

20240282681. SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MOUNTING BODY_simplified_abstract_(rohm co., ltd.)

Inventor(s): Masashi HAYASHIGUCHI of Kyoto-shi (JP) for rohm co., ltd., Hidetoshi ABE of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/495, H01L23/29, H01L23/31, H01L23/367, H01L25/07

CPC Code(s): H01L23/49562

Abstract: a semiconductor device includes a semiconductor element and a first terminal electrically connected to the semiconductor element. the first terminal includes a first portion at least a portion of which extends in a first direction and a second portion extending in the first direction. the second portion overlaps with the first portion as viewed in a second direction orthogonal to the first direction. the first terminal may include a third portion connecting the first portion and the second portion. the third portion may protrude beyond the first portion and the second portion as viewed in the first direction. the second section may be spaced apart from the first section.

20240282682. SEMICONDUCTOR PACKAGE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Yuki NAKANO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/495, H01L23/00, H01L25/065

CPC Code(s): H01L23/49575

Abstract: a semiconductor package includes a die pad, a semiconductor device that is arranged on the die pad, and that has a chip having a main surface, a main surface electrode arranged on the main surface, a terminal electrode arranged on the main surface electrode, and a sealing insulator including a first matrix resin and first fillers, and covering a periphery of the terminal electrode on the main surface such as to expose a part of the terminal electrode, and a package body that includes a second matrix resin and second fillers, and that seals the die pad and the semiconductor device such as to cover the sealing insulator.

20240282690. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Kota ISE of Kyoto-shi (JP) for rohm co., ltd., Koshun SAITO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/498, H01L23/00, H01L23/31

CPC Code(s): H01L23/49838

Abstract: a semiconductor device includes a lead with a terminal, and a sealing resin partially covering the terminal. the lead includes a base and metal layer covering the base. the base has a first terminal-extending portion forming the terminal. the first terminal-extending portion, exposed from the sealing resin, extends in a first direction crossing the thickness direction. the first terminal-extending portion includes a first end facing in the first direction and a first side wall facing in a second direction crossing the thickness and first directions. the first side wall has, in the first direction, a first side closer to the first end, a second side closer to the sealing resin, and a third side between the first side and the second side. the metal layer, covering the first end, the first side and the second side, is provided at a location avoiding the third side.

20240282692. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Yo MOCHIZUKI of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/498, H01L23/00, H01L23/367, H01L23/373, H01L25/07

CPC Code(s): H01L23/49844

Abstract: a semiconductor device includes a conductive member, a semiconductor element, and a sealing resin. the conductive member includes an obverse surface and a reverse surface facing away from each other in a thickness direction. the semiconductor element is bonded to the obverse surface. the sealing resin covers the conductive member and the semiconductor element. as viewed in the thickness direction, the obverse surface is surrounded by the reverse surface. the conductive member includes a first end surface located between the obverse surface and the reverse surface in the thickness direction. the first end surface is inclined relative to the reverse surface. the first end surface overlaps with the reverse surface as viewed in the thickness direction.

20240282699. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Bungo TANAKA of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H01L23/522, H01L23/00, H01L23/48, H01L23/498, H01L25/065

CPC Code(s): H01L23/5228

Abstract: a semiconductor device includes: a substrate; an element insulating layer provided on the substrate; and a semiconductor resistance layer provided on the element insulating layer. the semiconductor resistance layer includes: a front surface side resistance layer extending in a first direction perpendicular to a thickness direction of the substrate; a substrate side resistance layer arranged closer to the substrate than the front surface side resistance layer in the thickness direction; and an internal connector that electrically connects the front surface side resistance layer and the substrate side resistance layer in series.

20240282738. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Yuki NAKANO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/00, H01L23/31, H01L23/495, H01L29/06, H01L29/16, H01L29/417, H01L29/78

CPC Code(s): H01L24/13

Abstract: a semiconductor device includes a chip having a main surface, a main surface electrode arranged on the main surface, and a terminal electrode that has a conductor layer covering the main surface electrode and a gap portion penetrating the conductor layer in a thickness direction as viewed in cross section, and that is fixed to a same potential as that of the main surface electrode.

20240282748. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Tomohira KIKUCHI of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L25/065, H01L23/00, H01L23/31, H01L23/495, H01L23/522, H01L23/544

CPC Code(s): H01L25/0655

Abstract: a semiconductor device includes a conductive support member, a control element, an insulating element, a driver element and a sealing resin. the conductive support member includes a first lead and a second lead. the first lead has a first pad portion. the second lead has a second pad portion. the second pad portion is adjacent to the first pad portion in a first direction perpendicular to a thickness direction of the first pad portion. the control element is mounted on the first pad portion. the insulating element is mounted on the first pad portion and electrically connected to the control element. the driver element is mounted on the second pad portion and electrically connected to the insulating element. the sealing resin covers the first pad portion, the second pad portion, the control element, the insulating element and the driver element. as viewed in the thickness direction, the first pad portion has a first edge adjacent to the second pad portion in the first direction and extending in a second direction perpendicular to the thickness direction and the first direction. the first edge has a first end and a second end opposite in the second direction. as viewed in the thickness direction, the second pad portion has a second edge adjacent to the first edge in the first direction and extending in the second direction. the second edge has a third end and a fourth end opposite in the second direction. one of the third end and the fourth end is located between the first end and the second end in the second direction.

20240282749. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Yuki NAKANO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L25/065, H01L23/00, H01L23/498

CPC Code(s): H01L25/0655

Abstract: a semiconductor device includes a chip that has a main surface, a main surface electrode that covers the main surface, pillar electrodes that are arranged on the main surface electrode at an interval, a sealing insulator that covers a region between the pillar electrodes on the main surface electrode such as to expose parts of the pillar electrodes, and at least one terminal film that covers at least one of the pillar electrodes on the sealing insulator.

20240282762. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Shota IZUMI of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H01L27/02, H01L21/74, H01L21/762, H01L21/768

CPC Code(s): H01L27/0207

Abstract: a semiconductor device includes: a semiconductor chip including first and second main surfaces; and an element isolation portion partitioning a device region at the first main surface and including: an isolation trench at the first main surface; an isolation insulating film at an inner wall of the isolation trench; and an isolation conductor buried in the isolation trench via the isolation insulating film, wherein the isolation insulating film includes thin and thick film portions respectively having a first height from a bottom of the isolation trench and a second height from an upper end of the thin film portion up to a surface layer of the first main surface, and wherein the semiconductor chip includes an electric field concentration portion covered with the thick film portion at an intermediate portion of the isolation trench and applied with a stronger electric field than the bottom of the isolation trench.

20240282805. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Bungo TANAKA of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H01L23/522

CPC Code(s): H01L28/20

Abstract: the present disclosure provides a semiconductor device. the semiconductor device includes: a substrate; an element insulating layer, disposed on the substrate; and a semiconductor resistive layer, disposed within the element insulating layer. the semiconductor resistive layer extends along a first direction perpendicular to a thickness direction of the substrate and includes an uneven portion along the thickness direction.

20240282825. SiC SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Masaya UENO of Kyoto-shi (JP) for rohm co., ltd., Yuki NAKANO of Kyoto-shi (JP) for rohm co., ltd., Sawa HARUYAMA of Kyoto-shi (JP) for rohm co., ltd., Yasuhiro KAWAKAMI of Kyoto-shi (JP) for rohm co., ltd., Seiya NAKAZAWA of Kyoto-shi (JP) for rohm co., ltd., Yasunori KUTSUMA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/16, H01L29/04

CPC Code(s): H01L29/1608

Abstract: an sic semiconductor device includes an sic semiconductor layer including an sic monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the sic semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the sic semiconductor layer and modified to be of a property differing from the sic monocrystal.

20240282826. NITRIDE SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Hirotaka OTAKE of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/20, H01L29/423, H01L29/778

CPC Code(s): H01L29/2003

Abstract: the present disclosure provides a nitride semiconductor device. the nitride semiconductor device includes an electron travelling layer, an electron supply layer, a gate layer, a gate electrode, a source electrode, a drain electrode and a passivation layer. the gate layer includes a gate layer side surface located at an end portion of a side of the source electrode along a first direction, which is a direction in which the gate layer, the source electrode and the drain electrode are arranged. the passivation layer includes a passivation first side surface facing the source electrode along the first direction. the nitride semiconductor device further includes a source insulator film that covers the gate layer side surface and the passivation first side surface. the source insulator film insulates the gate layer from the source electrode.

20240282836. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Yuki NAKANO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/423, H01L23/31, H01L29/16

CPC Code(s): H01L29/4238

Abstract: a semiconductor device includes a chip that has a main surface, a main surface electrode that is arranged on the main surface, a terminal electrode that is arrange on the main surface electrode, a sealing insulator that covers a periphery of the terminal electrode on the main surface such as to expose a part of the terminal electrode, and a terminal film that covers the terminal electrode.

20240282846. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Shinya UMEKI of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/739, H01L23/522, H01L29/06, H01L29/10, H01L29/66

CPC Code(s): H01L29/7397

Abstract: provided is a semiconductor device including a semiconductor layer which has opposing first and second principal surfaces, an igbt region which is formed in the semiconductor layer, a diode region which is formed in the semiconductor layer and adjacent to the igbt region, a first impurity region of a first conductivity type which is formed inside the semiconductor layer.

20240282851. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Yuji OSUMI of Kyoto-shi (JP) for rohm co., ltd., Yoshinori FUKUDA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/78, H01L27/06, H01L27/088, H01L29/10

CPC Code(s): H01L29/7813

Abstract: the present disclosure provides a semiconductor device. the semiconductor device includes a main transistor, a monitoring transistor and a pair of separation portions selectively formed in a gate space sandwiched between adjacent trench gate structures. a body region is separated into a monitoring body region sandwiched between the pair of separation portions and a main body region at an opposite side of the monitoring body region across the pair of separation portions. the trench gate structures include: a first gate structure adjacent to the monitoring body region and the main body region along a first direction; and a second gate structure adjacent to the pair of separation portions. the first gate structure is a multi-electrode structure and the second gate structure is a single-electrode structure.

20240283439. SWITCH DRIVING DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Kenji HAMA of Kyoto (JP) for rohm co., ltd., Takahiro KOTANI of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H03K17/081, H02M1/08, H03K17/06

CPC Code(s): H03K17/08104

Abstract: for example, the switching drive device includes a driver configured to drive an n-type semiconductor switch element, a current limiter configured to limit a current fed to a boot capacitor bc included in a bootstrap circuit btc, and a current controller configured to control the operation of the current limiter . the current controller is configured to drive the current limiter to limit the current fed to the boot capacitor bc when the charge voltage across the boot capacitor bc is higher than a threshold value.

20240283445. GATE DRIVER CIRCUIT_simplified_abstract_(rohm co., ltd.)

Inventor(s): Hisashi SUGIE of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H03K17/284, H02P27/00

CPC Code(s): H03K17/284

Abstract: the present disclosure provides a gate driver circuit. an external resistor is connected to a setting pin. a high-side dead time circuit is configured to receive a first high-side control signal and generate a second high-side control signal. an analog delay circuit is configured to delay the first high-side control signal by a delay time corresponding to a resistance value of the external resistor to generate a delayed high-side control signal. a selector is configured to receive the first high-side control signal and the delayed high-side control signal, select one according to an electrical state of the setting pin, and output the selected signal as the second high-side control signal.

20240283449. DRIVER CIRCUIT OF SWITCHING TRANSISTOR, LASER DRIVER CIRCUIT, AND CONTROLLER CIRCUIT OF CONVERTER_simplified_abstract_(rohm co., ltd.)

Inventor(s): Taketo TSUKASA of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H03K17/687, H03K17/16

CPC Code(s): H03K17/6872

Abstract: a driver circuit that drives a switching transistor which is a gan-hemt (high electron mobility transistor), includes: an output line connected to a gate of the switching transistor; a low-side line connected to a source of the switching transistor; a high-side line; a first pmos transistor that is connected between the high-side line and the output line; a first nmos transistor that is connected between the output line and the low-side line; a second pmos transistor that is connected between the high-side line and the output line; a second nmos transistor that is connected between the output line and the low-side line; a third nmos transistor that is connected between the high-side line and the output line; and a control circuit that generates the p gate signal, the first n gate signal, and the second n gate signal.

20240283455. LEVEL SHIFTER, DRIVE CIRCUIT, SWITCHING POWER SUPPLY DEVICE, AND VEHICLE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Isao Takobe of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H03K19/0185, B60R16/03, H02M1/08, H02M3/158

CPC Code(s): H03K19/018507

Abstract: a level shifter includes first to third signal generators, wherein the first and second signal generators use, as an upper-side power supply voltage, a first internal voltage based on a first voltage when the first voltage is higher than a second voltage, and a second internal voltage based on the second voltage when the second voltage is higher than the first voltage, wherein the third signal generator uses the second voltage as an upper-side power supply voltage, wherein the first signal generator uses, as a lower-side power supply voltage, a third internal voltage based on a third voltage when the third voltage is higher than a fourth voltage, and a fourth internal voltage based on the fourth voltage when the fourth voltage is higher than the third voltage, and wherein the third voltage is lower than the first voltage and the fourth voltage is lower than the second voltage.

20240284681. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Noriyuki Shimoji of Kyoto (JP) for rohm co., ltd., Shinichi Tahara of Kyoto (JP) for rohm co., ltd., Ken Nakahara of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H10B51/30, H01L29/20, H01L29/51, H01L29/778

CPC Code(s): H10B51/30

Abstract: provided is a semiconductor device including a field effect transistor that has a first terminal connected to a load, a second terminal conducting to the first terminal via a channel, and a control terminal that controls conduction and interruption of the channel by an electric field, and a nonvolatile memory that is a nonvolatile memory connected to the control terminal and has a second control terminal supplied with a voltage that changes a direction of the electric field from the control terminal.

ROHM CO., LTD. patent applications on August 22nd, 2024