Panasonic intellectual property management co., ltd. (20240304630). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
panasonic intellectual property management co., ltd.
Inventor(s)
Manabu Yanagihara of Osaka (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304630 titled 'SEMICONDUCTOR DEVICE
The abstract of the patent application describes a semiconductor device that includes third active regions connecting two finger-end portions of field effect transistors (FETs) spaced apart from each other. Above the third active regions, there are portions of a third nitride semiconductor layer containing p-type impurities.
- The semiconductor device features third active regions connecting FETs, enhancing the overall functionality of the device.
- The inclusion of a third nitride semiconductor layer with p-type impurities improves the performance and efficiency of the device.
- The spacing of the FETs and the third active regions allows for optimized operation and connectivity within the semiconductor device.
- The innovative design of the device contributes to increased reliability and durability in various applications.
- The integration of advanced semiconductor materials and structures enhances the overall performance and capabilities of the device.
Potential Applications: This technology can be applied in the development of advanced electronic devices, such as smartphones, tablets, and computers. It can also be utilized in the automotive industry for vehicle electronics and communication systems.
Problems Solved: This technology addresses the need for improved connectivity and performance in semiconductor devices. It also solves issues related to power consumption and heat dissipation in electronic components.
Benefits: The semiconductor device offers enhanced functionality, improved efficiency, and increased reliability. It also provides a more compact and cost-effective solution for electronic applications.
Commercial Applications: This technology has significant commercial potential in the consumer electronics market, as well as in the automotive and telecommunications industries. It can be used to develop high-performance electronic devices with advanced features and capabilities.
Questions about Semiconductor Devices: 1. How does the inclusion of third active regions improve the performance of field effect transistors? 2. What are the potential implications of using a third nitride semiconductor layer with p-type impurities in semiconductor devices?
Original Abstract Submitted
a semiconductor device includes third active regions that connect two finger-end portions of field effect transistors (fets) spaced apart from each other, and includes, above the third active regions, portions of a third nitride semiconductor layer that includes p-type impurities.
