Nvidia corporation (20240161815). DUAL PORT DUAL POWER RAIL MEMORY ARCHITECTURE simplified abstract
Contents
- 1 DUAL PORT DUAL POWER RAIL MEMORY ARCHITECTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DUAL PORT DUAL POWER RAIL MEMORY ARCHITECTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
DUAL PORT DUAL POWER RAIL MEMORY ARCHITECTURE
Organization Name
Inventor(s)
Lalit Gupta of FREMONT CA (US)
Jason Golbus of Palo Alto CA (US)
Jesse San-Jey Wang of Santa Clara CA (US)
DUAL PORT DUAL POWER RAIL MEMORY ARCHITECTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240161815 titled 'DUAL PORT DUAL POWER RAIL MEMORY ARCHITECTURE
Simplified Explanation
The patent application describes multi-ported memories with write peripheral logic operating in one voltage domain, read peripheral logic operating in a different voltage domain, and at least one bit cell array with voltage domain crossings localized within the bit cells.
- Write peripheral logic operates in a first voltage domain
- Read peripheral logic operates in a second voltage domain
- Voltage domain crossings are localized in bit cells of the bit cell array
Potential Applications
The technology could be applied in high-performance computing systems, data centers, and networking equipment where fast and efficient memory access is crucial.
Problems Solved
This innovation solves the challenge of integrating different voltage domain peripherals in multi-ported memories while maintaining efficient operation and data integrity.
Benefits
The technology allows for improved performance, reduced power consumption, and enhanced reliability in memory systems with multiple ports and different voltage requirements.
Potential Commercial Applications
- "Enhanced Memory Systems for High-Performance Computing"
Possible Prior Art
There may be prior art related to multi-ported memories with separate voltage domains for read and write operations, but specific examples would need to be researched.
What are the specific voltage requirements for the write and read peripheral logic in this technology?
The specific voltage requirements for the write and read peripheral logic are not provided in the abstract. Further details from the full patent application would be needed to answer this question accurately.
How does the localization of voltage domain crossings within the bit cells contribute to the overall efficiency of the memory system?
The abstract mentions that voltage domain crossings are localized within the bit cells, but it does not elaborate on how this localization contributes to the efficiency of the memory system. This aspect would need to be explored further in the detailed description of the patent application.
Original Abstract Submitted
multi-ported memories that include write peripheral logic configured to operate in a first voltage domain, read peripheral logic configured to operate in a second voltage domain, and at least one bit cell array, wherein the write peripheral logic and the read peripheral logic are disposed on opposite sides of the bit cell array and voltage domain crossings between the first voltage domain and the second voltage domain are localized in bit cells of the at least one bit cell array.
