Nanya technology corporation (20240349518). SEMICONDUCTOR DEVICE STRUCTURE simplified abstract
Contents
SEMICONDUCTOR DEVICE STRUCTURE
Organization Name
Inventor(s)
SHING-YIH Shih of NEW TAIPEI CITY (TW)
SEMICONDUCTOR DEVICE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240349518 titled 'SEMICONDUCTOR DEVICE STRUCTURE
The abstract describes a semiconductor device structure that includes an interposer and a first electronic component. The interposer consists of a first semiconductor die and a second semiconductor die, with the first die containing a cache memory and a memory control circuit, and the second die containing a cache memory and a memory control circuit. The first electronic component is placed on the interposer and communicates with both semiconductor dies.
- The semiconductor device structure includes an interposer with two semiconductor dies and a first electronic component.
- The first semiconductor die houses a cache memory and a memory control circuit, while the second semiconductor die also has a cache memory and a memory control circuit.
- The first electronic component is in communication with both semiconductor dies on the interposer.
Potential Applications: - High-performance computing systems - Data centers - Networking equipment
Problems Solved: - Improved data processing speed and efficiency - Enhanced communication between electronic components
Benefits: - Faster data access and retrieval - Increased overall system performance - Enhanced reliability and stability
Commercial Applications: Title: "Advanced Semiconductor Device Structure for High-Performance Computing" This technology can be utilized in high-performance computing systems, data centers, and networking equipment to enhance data processing speed and efficiency, leading to improved overall system performance and reliability.
Questions about the technology: 1. How does the interposer improve communication between the semiconductor dies? 2. What are the specific advantages of having cache memory and memory control circuits on separate semiconductor dies?
Original Abstract Submitted
a semiconductor device structure and method of manufacturing the same are provided. the semiconductor device structure includes an interposer and a first electronic component. the interposer includes a first semiconductor die and a second semiconductor die. the first semiconductor die includes a first cache memory and a first memory control circuit. the second semiconductor die includes a second cache memory and a second memory control circuit. the first electronic component is disposed on the interposer and in communication with the first semiconductor die and the second semiconductor die.
