Murata manufacturing co., ltd. (20240305271). ACOUSTIC WAVE DEVICE simplified abstract
Contents
ACOUSTIC WAVE DEVICE
Organization Name
murata manufacturing co., ltd.
Inventor(s)
Sunao Yamazaki of Nagaokakyo-shi (JP)
ACOUSTIC WAVE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240305271 titled 'ACOUSTIC WAVE DEVICE
The abstract describes an acoustic wave device with a piezoelectric substrate, functional electrode, support layers, covering portion, silicon oxide layer, and inductor.
- Piezoelectric substrate with a piezoelectric layer and functional electrode
- Support layers surrounding the functional electrode
- Covering portion made of silicon with a silicon oxide layer
- Inductor made of wire on the silicon oxide layer
- Amorphous silicon or polysilicon layer between the covering portion and silicon oxide layer
Potential Applications: - Acoustic wave sensors - Medical ultrasound devices - Communication technology
Problems Solved: - Efficient acoustic wave transmission - Improved sensor sensitivity - Enhanced signal processing
Benefits: - High-performance acoustic wave device - Increased durability and reliability - Precise signal detection
Commercial Applications: Title: Advanced Acoustic Wave Devices for Sensing Applications Description: This technology can be utilized in various industries such as healthcare, telecommunications, and automotive for advanced sensing applications, leading to improved performance and accuracy in signal processing.
Questions about Acoustic Wave Devices: 1. How does the piezoelectric substrate contribute to the functionality of the acoustic wave device? - The piezoelectric substrate generates acoustic waves when subjected to an electric field, enabling efficient signal transmission.
2. What are the advantages of using a silicon oxide layer in the covering portion of the acoustic wave device? - The silicon oxide layer provides insulation and protection for the inductor, enhancing the device's performance and longevity.
Original Abstract Submitted
an acoustic wave device according to the present invention includes a piezoelectric substrate including a piezoelectric layer, a functional electrode provided on the piezoelectric layer, a first support layer provided on the piezoelectric substrate so as to surround the functional electrode, a covering portion provided on or above the first support layer and including a first main surface positioned on the functional electrode side and a second main surface opposite to the first main surface, a silicon oxide layer provided on the first main surface side of the covering portion, and an inductor provided on the silicon oxide layer and made of a wire. the covering portion is made of silicon. the acoustic wave device further includes one of an amorphous silicon layer and a polysilicon layer provided between the covering portion and the silicon oxide layer.
