Murata manufacturing co., ltd. (20240304660). SEMICONDUCTOR DEVICE, MATCHING CIRCUIT, AND FILTERING CIRCUIT simplified abstract
Contents
SEMICONDUCTOR DEVICE, MATCHING CIRCUIT, AND FILTERING CIRCUIT
Organization Name
murata manufacturing co., ltd.
Inventor(s)
Korekiyo Ito of Nagaokakyo-shi (JP)
SEMICONDUCTOR DEVICE, MATCHING CIRCUIT, AND FILTERING CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304660 titled 'SEMICONDUCTOR DEVICE, MATCHING CIRCUIT, AND FILTERING CIRCUIT
The semiconductor device described in the patent application consists of a substrate, a first electrode layer, a dielectric film containing silicon oxide with a specific ratio of three-membered ring structures to four-membered ring structures, a second electrode layer, a protective layer, and outer electrodes.
- The dielectric film in the device contains silicon oxide with a ratio of three-membered ring structures to four-membered ring structures of 0.46 or less.
- The protective layer covers the first electrode layer and the second electrode layer.
- Outer electrodes pierce the protective layer to provide connectivity.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It may find applications in the development of high-performance integrated circuits and sensors.
Problems Solved: - The technology addresses the need for improved dielectric films with specific structural properties for enhanced device performance. - It solves the challenge of ensuring proper connectivity and protection in semiconductor devices.
Benefits: - Enhanced performance and reliability of semiconductor devices. - Improved efficiency in electronic applications. - Potential for miniaturization and increased functionality in electronic devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could have significant implications in the semiconductor industry, particularly in the development of advanced electronic devices for various commercial applications. It may lead to the production of more efficient and reliable electronic components, driving innovation in sectors such as telecommunications, computing, and consumer electronics.
Prior Art: Readers interested in exploring prior art related to this technology may consider researching patents and publications in the field of semiconductor device manufacturing, dielectric films, and silicon oxide structures.
Frequently Updated Research: Researchers and industry professionals may want to stay updated on advancements in dielectric film technology, semiconductor device manufacturing, and materials science to further enhance the performance and capabilities of electronic devices. Regularly checking academic journals, industry publications, and attending conferences in these areas can provide valuable insights into the latest research developments.
Questions about the Technology: 1. How does the specific ratio of three-membered ring structures to four-membered ring structures in the silicon oxide impact the performance of the semiconductor device? - The ratio of three-membered ring structures to four-membered ring structures in the silicon oxide affects the dielectric properties of the film, influencing the overall performance and reliability of the semiconductor device.
2. What are the potential challenges in implementing this technology on a larger scale for commercial production? - Scaling up the production of semiconductor devices with this technology may involve challenges related to manufacturing processes, quality control, and cost-effectiveness. Collaborating with industry partners and investing in research and development can help address these challenges.
Original Abstract Submitted
a semiconductor device that includes a substrate; a first electrode layer on the substrate; a dielectric film on the first electrode layer, the dielectric film containing silicon oxide, and a ratio of three-membered ring structures to four-membered ring structures in the silicon oxide is 0.46 or less; a second electrode layer on the dielectric film; a protective layer covering the first electrode layer and the second electrode layer, and outer electrodes piercing the protective layer.
