Mitsubishi electric corporation (20240313095). RC-IGBT simplified abstract
Contents
RC-IGBT
Organization Name
mitsubishi electric corporation
Inventor(s)
RC-IGBT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313095 titled 'RC-IGBT
The abstract describes an RC-IGBT (Reverse Conducting Insulated Gate Bipolar Transistor) with a semiconductor substrate containing different regions such as a cell region, a wiring region, and a termination region. The substrate includes a diffusion layer of a second conductivity type on the first main surface side of a drift layer in various regions of the device.
- The diffusion layer consists of a base layer in the IGBT region, an anode layer in the diode region, a wiring well layer in the wiring region, and a termination well layer in the termination region.
- The depth of the base layer is shallower than the depths of the trench gates but deeper than the depths of the anode layer, wiring well layer, and termination well layer.
Potential Applications: - Power electronics - Renewable energy systems - Electric vehicles
Problems Solved: - Improved efficiency in power conversion - Enhanced performance in high-power applications - Increased reliability in electronic systems
Benefits: - Higher efficiency - Better performance - Increased reliability
Commercial Applications: Title: Enhanced Power Electronics Solutions for Various Industries This technology can be utilized in industries such as renewable energy, automotive, and industrial automation for improved power conversion and performance.
Prior Art: Readers can explore prior patents related to RC-IGBT technology, semiconductor devices, and power electronics to understand the evolution of this innovation.
Frequently Updated Research: Researchers are continually exploring ways to enhance the efficiency and performance of RC-IGBTs in various applications to meet the growing demand for energy-efficient solutions.
Questions about RC-IGBTs: 1. How does the diffusion layer in an RC-IGBT contribute to its overall performance? 2. What are the key differences between traditional IGBTs and RC-IGBTs in terms of functionality and efficiency?
Original Abstract Submitted
an rc-igbt includes a semiconductor substrate having a cell region, a wiring region, and a termination region. the semiconductor substrate includes a diffusion layer of a second conductivity type provided on a first main surface side of a drift layer in an igbt region, a diode region, the wiring region, and the termination region. the diffusion layer includes a base layer in the igbt region, an anode layer in the diode region, a wiring well layer in the wiring region, and a termination well layer in the termination region. a depth of the base layer is less than depths of a plurality of trench gates, and is equal to or more than depths of the anode layer, the wiring well layer, and the termination well layer.
