Mitsubishi electric corporation (20240304574). SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract
Contents
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Organization Name
mitsubishi electric corporation
Inventor(s)
Toshihiro Imasaka of Tokyo (JP)
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304574 titled 'SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Simplified Explanation:
This semiconductor device consists of a substrate, breakdown voltage holding insulating film, element portion with lower and upper elements, lead-out wire, first electrode pad, second electrode pad (part of the upper element), and a top layer protective film covering the upper element.
Key Features and Innovation:
- Semiconductor device with breakdown voltage holding insulating film and top layer protective film extending beyond the first electrode pad.
- Electrically conductive pad double stack portion on the upper surface of the second electrode pad.
- Top layer protective film covering the peripheral portion of the pad double stack portion.
Potential Applications: This technology can be used in various semiconductor devices, power electronics, and integrated circuits.
Problems Solved: This technology addresses the need for improved insulation and protection in semiconductor devices.
Benefits:
- Enhanced breakdown voltage holding capabilities.
- Improved protection for the electrode pads.
- Increased reliability and longevity of semiconductor devices.
Commercial Applications: Potential commercial applications include power electronics, automotive electronics, and consumer electronics markets.
Prior Art: Prior art related to this technology may include patents or research on semiconductor device insulation and protection methods.
Frequently Updated Research: Stay updated on the latest research in semiconductor device insulation and protection technologies for advancements in the field.
Questions about Semiconductor Device Insulation and Protection: 1. What are the key components of a semiconductor device for insulation and protection? 2. How does the breakdown voltage holding insulating film contribute to the performance of the device?
Original Abstract Submitted
a semiconductor device includes: a substrate; a breakdown voltage holding insulating film; an element portion including a lower element and an upper element; a lead-out wire; a first electrode pad; a second electrode pad being one end portion of the upper element; and a top layer protective film covering the upper element so that the second electrode pad is exposed from a second contact hole. the breakdown voltage holding insulating film and the top layer protective film extend to a region outside the first electrode pad in a direction of extension of the lead-out wire. an electrically conductive pad double stack portion is disposed on an upper surface of the second electrode pad. the top layer protective film covers a peripheral portion of the pad double stack portion.
