Mitsubishi electric corporation (20240297479). OPTICAL SEMICONDUCTOR DEVICE simplified abstract
Contents
OPTICAL SEMICONDUCTOR DEVICE
Organization Name
mitsubishi electric corporation
Inventor(s)
Keisuke Matsumoto of Tokyo (JP)
OPTICAL SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240297479 titled 'OPTICAL SEMICONDUCTOR DEVICE
Simplified Explanation: The patent application describes an optical semiconductor with a semiconductor substrate and a semiconductor structure containing an optical waveguide layer. The structure includes a cladding layer connected to both faces of the substrate and a heater layer to heat the optical waveguide layer.
- The optical semiconductor includes a semiconductor substrate and a semiconductor structure with an optical waveguide layer.
- A cladding layer is connected to both faces of the semiconductor substrate.
- A heater layer made of semiconductor material is used to heat the optical waveguide layer.
- The heater layer can heat the waveguide layer from either face of the substrate through the cladding layer.
Potential Applications: 1. Optical communication systems 2. Fiber optic networks 3. Photonic integrated circuits
Problems Solved: 1. Efficient heating of the optical waveguide layer 2. Improved performance of optical semiconductor devices
Benefits: 1. Enhanced functionality of optical semiconductor devices 2. Increased efficiency in optical communication systems
Commercial Applications: Optical semiconductors can be used in telecommunications, data centers, and other industries requiring high-speed data transmission.
Questions about Optical Semiconductors: 1. How does the heater layer impact the performance of the optical waveguide layer? 2. What are the potential limitations of using optical semiconductors in practical applications?
Original Abstract Submitted
an optical semiconductor comprises a semiconductor substrate and a semiconductor structure part including an optical waveguide layer that is formed on the semiconductor substrate. the semiconductor structure part includes a cladding layer connected to a first face that is the face on the side of the semiconductor substrate in the optical waveguide layer and to a second face that is the face on the opposite side of the semiconductor substrate, and a heater layer made of a semiconductor material to heat the optical waveguide layer from the side of the first face or/and from the side of the second face in the optical waveguide layer through the cladding layer.
