Mitsubishi electric corporation (20240282725). POWER AMPLIFIER simplified abstract
Contents
POWER AMPLIFIER
Organization Name
mitsubishi electric corporation
Inventor(s)
Yoshinobu Sasaki of Tokyo (JP)
POWER AMPLIFIER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240282725 titled 'POWER AMPLIFIER
The abstract describes a patent application for a FET chip that includes a FET cell, a fundamental wave gate pad, and a second harmonic gate pad, all connected by gate wiring. A pre-match chip is also included, with a fundamental wave pre-match circuit and a second harmonic trap circuit connected by wires.
- FET chip with FET cell, fundamental wave gate pad, and second harmonic gate pad
- Gate wiring connecting FET cell to gate pads
- Pre-match chip with fundamental wave pre-match circuit and second harmonic trap circuit
- Wires connecting pre-match circuits to gate pads
Potential Applications: - Integrated circuits - Wireless communication devices - Signal processing systems
Problems Solved: - Improved signal processing efficiency - Enhanced circuit performance - Reduced interference in wireless communication
Benefits: - Higher data transmission speeds - Better signal quality - Increased overall system reliability
Commercial Applications: - Semiconductor industry - Telecommunications sector - Consumer electronics market
Questions about the technology: 1. How does the FET chip improve signal processing efficiency? 2. What are the advantages of using a pre-match chip in wireless communication devices?
Frequently Updated Research: - Ongoing developments in semiconductor technology - Advancements in wireless communication systems
Overall, this patent application introduces a novel FET chip design with pre-match capabilities, offering potential benefits for various industries and applications.
Original Abstract Submitted
a fet chip (t) includes a fet cell (cl,cl), a fundamental wave gate pad (gp,g) and a second harmonic gate pad (gp) separated from each other, and gate wiring (gb,gb) connecting a gate electrode (g,g) of the fet cell (cl,cl) to the fundamental wave gate pad (gp,g) and the second harmonic gate pad (gp). a pre-match chip (p) includes a fundamental wave pre-match circuit (pa,pa) and a second harmonic trap circuit (pa). a fundamental wave wire (w,w) connects the fundamental wave pre-match circuit (pa,pa) and the fundamental wave gate pad (gp,g). a second harmonic wire (w,w) connects the second harmonic trap circuit (pa) and the second harmonic gate pad (gp).
