Mitsubishi electric corporation (20240234338). HIGH-FREQUENCY SEMICONDUCTOR PACKAGE simplified abstract
Contents
HIGH-FREQUENCY SEMICONDUCTOR PACKAGE
Organization Name
mitsubishi electric corporation
Inventor(s)
Hiroaki Minamide of Tokyo (JP)
HIGH-FREQUENCY SEMICONDUCTOR PACKAGE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240234338 titled 'HIGH-FREQUENCY SEMICONDUCTOR PACKAGE
The patent application describes a semiconductor device with input and output feedthroughs wire-connected to pads on the semiconductor chip, a metal seal ring on the substrate electrically connected to a metal plate, and a conductive cap covering the semiconductor chip.
- The metal seal ring is electrically connected to the metal plate via a through-hole.
- A conductive cap is bonded to the metal seal ring and covers the area above the semiconductor chip.
- An isolation metal wire is connected to the metal plate and forms an isolation wall partitioning the inner space into regions for the input and output feedthroughs.
Potential Applications: - This technology can be used in various semiconductor devices requiring efficient input and output connections. - It can be applied in electronic devices that need reliable electrical connections and isolation.
Problems Solved: - Provides a secure and efficient way to connect input and output feedthroughs to a semiconductor chip. - Ensures proper isolation between different regions of the semiconductor device.
Benefits: - Improved electrical connectivity and isolation in semiconductor devices. - Enhanced reliability and performance of electronic devices utilizing this technology.
Commercial Applications: - This technology can be valuable in the manufacturing of medical devices, communication equipment, and other electronic devices where precise input and output connections are crucial.
Questions about the Technology: 1. How does the metal seal ring contribute to the overall functionality of the semiconductor device? 2. What are the advantages of using an isolation metal wire in this technology?
Frequently Updated Research: - Stay updated on advancements in semiconductor device manufacturing techniques that could enhance the efficiency and performance of this technology.
Original Abstract Submitted
an input feedthrough () and an output feedthrough () provided on the substrate () are wire-connected to an input pad () and an output pad () of the semiconductor chip () respectively. a metal seal ring () is provided on the substrate () is electrically connected to the metal plate () by a through-hole (). a conductive cap () is bonded to the metal seal ring () and covers a place above the semiconductor chip (). both ends of an isolation metal wire () are electrically connected to the metal plate () and a loop comes into contact with a lower surface of the conductive cap (). the isolation metal wire () constitutes an isolation wall partitioning an inner space into a region including the input feedthrough () and a region including the output feedthrough ().
