Micron technology, inc. (20250089318). Transistor and Methods of Forming Transistors
Contents
Transistor and Methods of Forming Transistors
Organization Name
Inventor(s)
Vassil N. Antonov of Boise ID (US)
Kamal M. Karda of Boise ID (US)
Michael Mutch of Meridian ID (US)
Hung-Wei Liu of Meridian ID (US)
Jeffery B. Hull of Boise ID (US)
Transistor and Methods of Forming Transistors
This abstract first appeared for US patent application 20250089318 titled 'Transistor and Methods of Forming Transistors
Original Abstract Submitted
a transistor comprises a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region. the channel region is crystalline and comprises a plurality of vertically-elongated crystal grains that individually are directly against both of the top source/drain region and the bottom source/drain region. other embodiments, including methods, are disclosed.
