Micron technology, inc. (20240345946). MEMORY SUB-SYSTEM LUN BYPASSING simplified abstract
Contents
MEMORY SUB-SYSTEM LUN BYPASSING
Organization Name
Inventor(s)
Meng Wei of Pudong New District (CN)
MEMORY SUB-SYSTEM LUN BYPASSING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240345946 titled 'MEMORY SUB-SYSTEM LUN BYPASSING
The method described in the abstract involves assigning initial credit values to each logical unit number (LUN) of a block stripe, performing an erase operation across the block stripe, reducing the initial credit values in response to the erase operation, refraining from programming to LUNs with reduced credit values of zero, and programming only to LUNs with reduced credit values greater than zero.
- Assigning initial credit values to LUNs of a block stripe
- Performing an erase operation across the block stripe
- Reducing initial credit values in response to the erase operation
- Refraining from programming to LUNs with reduced credit values of zero
- Programming only to LUNs with reduced credit values greater than zero
Potential Applications: - This technology could be applied in solid-state drives (SSDs) to optimize data programming and erase operations. - It could be used in flash memory systems to improve performance and longevity.
Problems Solved: - Efficient management of data programming and erase operations in storage devices. - Enhancing the lifespan and performance of flash memory systems.
Benefits: - Improved data programming efficiency. - Extended lifespan of storage devices. - Enhanced performance of flash memory systems.
Commercial Applications: Title: "Optimized Data Programming Method for Solid-State Drives" This technology could be utilized in the manufacturing of SSDs to enhance their performance and durability, leading to increased market competitiveness and customer satisfaction.
Questions about the technology: 1. How does this method improve the efficiency of data programming in storage devices? 2. What impact does reducing initial credit values have on the overall performance of flash memory systems?
Original Abstract Submitted
a method includes assigning a respective initial credit value to each lun of a block stripe; performing an erase operation across the block stripe; reducing, in response to the erase operation, each respective initial credit value by a unit increment to provide a respective reduced credit value; refraining from programming to each lun of the block stripe having a respective reduced credit value equal to zero; and programming to each lun of the block stripe having a respective reduced credit value greater than zero.
