Micron technology, inc. (20240339437). SEMICONDUCTOR DEVICE ASSEMBLIES AND SYSTEMS WITH IMPROVED THERMAL PERFORMANCE AND METHODS FOR MAKING THE SAME simplified abstract
SEMICONDUCTOR DEVICE ASSEMBLIES AND SYSTEMS WITH IMPROVED THERMAL PERFORMANCE AND METHODS FOR MAKING THE SAME
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SEMICONDUCTOR DEVICE ASSEMBLIES AND SYSTEMS WITH IMPROVED THERMAL PERFORMANCE AND METHODS FOR MAKING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339437 titled 'SEMICONDUCTOR DEVICE ASSEMBLIES AND SYSTEMS WITH IMPROVED THERMAL PERFORMANCE AND METHODS FOR MAKING THE SAME
The abstract describes semiconductor device assemblies with thermally conductive material between adjacent semiconductor dies in a vertical stack to dissipate heat.
- The thermally conductive material can conduct heat laterally towards the outer edge of the assembly.
- The material includes allotropes of carbon such as diamond, graphene, graphite, carbon nanotubes, or a combination.
- The material can be deposited or adhered as a film onto the semiconductor dies.
Potential Applications: - High-performance computing - Data centers - Automotive electronics - Aerospace technology
Problems Solved: - Heat dissipation in densely packed semiconductor devices - Thermal management in high-power applications
Benefits: - Improved performance and reliability - Extended lifespan of semiconductor devices - Enhanced thermal efficiency
Commercial Applications: Title: "Advanced Thermal Management Solutions for Semiconductor Devices" This technology can be used in various industries such as electronics, automotive, aerospace, and telecommunications to improve the thermal performance of semiconductor devices.
Questions about the technology: 1. How does the use of allotropes of carbon improve heat dissipation in semiconductor device assemblies? 2. What are the potential challenges in implementing this technology in high-power applications?
Original Abstract Submitted
semiconductor device assemblies are provided with one or more layers of thermally conductive material disposed between adjacent semiconductor dies in a vertical stack. the thermally conductive material can be configured to conduct heat generated by one or more of the semiconductor dies in laterally outward towards an outer edge of the assembly. the layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. the layer of thermally conductive material can be provided via deposition (e.g., sputtering, pvd, cvd, or ald), or via adhering a film comprising the layer of thermally conductive material to one or more of the semiconductor dies.
