Micron technology, inc. (20240321745). MEMORY DEVICES INCLUDING SLOT STRUCTURES simplified abstract
Contents
MEMORY DEVICES INCLUDING SLOT STRUCTURES
Organization Name
Inventor(s)
Adam W. Saxler of Boise ID (US)
MEMORY DEVICES INCLUDING SLOT STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321745 titled 'MEMORY DEVICES INCLUDING SLOT STRUCTURES
The microelectronic device described in the abstract consists of a stack structure with slot structures vertically extending through it, dividing it into block structures. Each slot structure includes an insulative liner material and grains of a material in contact with the liner material.
- The device features slot structures that divide the stack structure into block structures.
- Each slot structure contains an insulative liner material and grains of a material in contact with the liner material.
- The grains of the material include first grains that span the entire width between the sidewalls of the insulative liner material.
Potential Applications: This technology could be applied in the development of advanced memory devices, electronic systems, and other microelectronic applications that require precise and efficient vertical integration.
Problems Solved: This innovation addresses the need for improved vertical integration in microelectronic devices, enhancing their performance and functionality.
Benefits: The use of slot structures with insulative liner materials and grains of a material allows for more efficient and reliable vertical integration in microelectronic devices, leading to enhanced performance and functionality.
Commercial Applications: This technology could have significant commercial applications in the semiconductor industry, particularly in the development of memory devices, electronic systems, and other microelectronic products.
Questions about the technology: 1. How does the use of slot structures with insulative liner materials improve the performance of microelectronic devices? 2. What are the potential implications of this technology for the semiconductor industry?
Frequently Updated Research: Researchers are continually exploring new materials and techniques to further enhance the performance and efficiency of microelectronic devices, including advancements in vertical integration technologies.
Original Abstract Submitted
a microelectronic device comprises a stack structure, and slot structures vertically extending through the stack structure and dividing the stack structure into block structures. each of the slot structures individually comprises an insulative liner material vertically extending through the slot structure and contacting sidewalls of the insulative levels and the conductive levels defining the slot structure, and grains of a material in contact with sidewalls of the insulative liner material. the grains of the material comprise first grains spanning an entire width between the sidewalls of the insulative liner material. related memory devices, electronic systems, and methods are also described.
