Micron technology, inc. (20240312554). EFFICIENT READ DISTURB SCANNING simplified abstract
Contents
EFFICIENT READ DISTURB SCANNING
Organization Name
Inventor(s)
Chun Sum Yeung of San Jose CA (US)
EFFICIENT READ DISTURB SCANNING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240312554 titled 'EFFICIENT READ DISTURB SCANNING
The patent application describes methods, systems, and devices for efficient read disturb scanning in a memory system. The system limits the quantity of word lines scanned during a read disturb scan by selecting a threshold quantity of word lines based on their characterization, such as higher bit error rates.
- The memory system selects one or more word lines with higher bit error rates for the read disturb scan.
- It determines failure bit counts of the selected word lines and excludes unselected word lines from the scan.
- The system decides whether to perform a refresh operation on the block based on the failure bit counts meeting a threshold.
Potential Applications: - Memory systems in electronic devices - Data storage systems in computers
Problems Solved: - Efficient read disturb scanning in memory systems - Reducing unnecessary scans and refresh operations
Benefits: - Improved memory system performance - Enhanced data integrity - Extended lifespan of memory components
Commercial Applications: Title: "Efficient Read Disturb Scanning Technology for Memory Systems" This technology can be used in various electronic devices and data storage systems, enhancing their performance and reliability. It can be particularly beneficial in industries that rely heavily on data storage and memory systems.
Prior Art: Prior research in memory systems and data storage technologies may provide insights into similar approaches to efficient read disturb scanning.
Frequently Updated Research: Researchers may be exploring new techniques and algorithms to further optimize read disturb scanning in memory systems. Stay updated on the latest advancements in this field for potential improvements in performance and reliability.
Questions about Efficient Read Disturb Scanning: 1. How does efficient read disturb scanning impact the overall performance of memory systems? Efficient read disturb scanning can improve the reliability and longevity of memory components by reducing unnecessary scans and refresh operations, leading to enhanced system performance.
2. What are the potential challenges in implementing efficient read disturb scanning in memory systems? Implementing efficient read disturb scanning may require sophisticated algorithms and hardware capabilities to accurately select and scan word lines based on their characterization, which could pose technical challenges in system integration and optimization.
Original Abstract Submitted
methods, systems, and devices for efficient read disturb scanning are described. a memory system may limit a quantity of word lines scanned as part of a read disturb scan. for example, the memory system may select a threshold quantity of word lines of a block for the read disturb scan based on a characterization of the word lines, such as selecting one or more word lines having higher bit error rates than other word lines of the block. the memory system may perform the read disturb scan on the selected one or more word lines to determine respective failure bit counts of the selected word lines and exclude unselected word lines of the block from the read disturb scan. the memory system may determine whether to perform a refresh operation on the block based on whether a respective failure bit count satisfies a threshold failure bit count.
