Micron technology, inc. (20240312498). SEMICONDUCTOR DEVICE HAVING OUTPUT BUFFER simplified abstract
Contents
SEMICONDUCTOR DEVICE HAVING OUTPUT BUFFER
Organization Name
Inventor(s)
Kazuyuki Morishige of Sagamihara (JP)
Tetsuya Arai of Sagamihara (JP)
SEMICONDUCTOR DEVICE HAVING OUTPUT BUFFER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240312498 titled 'SEMICONDUCTOR DEVICE HAVING OUTPUT BUFFER
The patent application describes an apparatus with a semiconductor substrate, gate electrodes, wiring layers, and via conductors for improved performance in electronic devices.
- The apparatus includes source regions and drain regions arranged alternately in a first direction on the semiconductor substrate.
- Gate electrodes are positioned between the source and drain regions to control the flow of current.
- A first wiring layer consists of conductive patterns covering the source and drain regions, with via conductors connecting them.
- A second wiring layer, placed over the first layer, includes additional conductive patterns and via conductors for enhanced connectivity.
- The fourth via conductors in the second wiring layer are shifted from the third via conductors in a perpendicular direction, optimizing the layout for efficient operation.
Potential Applications: - This technology can be applied in the manufacturing of integrated circuits for various electronic devices. - It can improve the performance and reliability of semiconductor devices such as microprocessors and memory chips.
Problems Solved: - Enhances the connectivity and efficiency of electronic devices. - Optimizes the layout of components for better functionality.
Benefits: - Improved performance and reliability of electronic devices. - Enhanced connectivity and efficiency in semiconductor devices.
Commercial Applications: - This technology can be utilized in the production of advanced electronic devices, leading to improved performance and reliability in the market.
Questions about the technology: 1. How does the shifting of via conductors in the second wiring layer improve the functionality of the apparatus? 2. What are the potential implications of this technology in the semiconductor industry?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor technology to further enhance the performance of electronic devices.
Original Abstract Submitted
some embodiments provide an apparatus including a semiconductor substrate having source regions and regions alternately arranged in a first direction; gate electrodes between the source regions and the drain regions; a first wiring layer including first conductive patterns covering the source regions and second conductive patterns covering the drain regions; first via conductors between the first conductive patterns and the source regions; second via conductors between the second conductive patterns and the drain regions; a second wiring layer over the first wiring layer, including third conductive patterns covering the first conductive patterns and fourth conductive patterns covering the second conductive patterns; third via conductors between the third conductive patterns and the first conductive patterns; and fourth via conductors between the fourth conductive patterns and the second conductive patterns. the fourth via conductors are shifted from the third via conductors in a second direction perpendicular to the first direction.
