Micron technology, inc. (20240311311). ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE simplified abstract
Contents
ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE
Organization Name
Inventor(s)
Li-Te Chang of San Jose CA (US)
Murong Lang of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240311311 titled 'ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE
The abstract of this patent application describes a method for identifying a block of memory and determining a threshold voltage offset for a wordline associated with the block. This threshold voltage offset is based on a table that corresponds to various metrics such as media state, wordline group, or the difference between the wordline and a boundary wordline of the block. A read operation is then performed on the block using a modified read level voltage that incorporates the threshold voltage offset.
- Identification of memory block and threshold voltage offset for associated wordline
- Threshold voltage offset table based on metrics like media state and wordline group
- Read operation performed using modified read level voltage with threshold voltage offset
- Optimization of read level voltage for improved memory access
- Enhanced performance and reliability of memory devices
Potential Applications: - Improved memory access in solid-state drives - Enhanced data retention in flash memory - Increased efficiency in memory-intensive applications
Problems Solved: - Addressing variability in memory cell behavior - Improving read accuracy and speed in memory devices
Benefits: - Enhanced memory performance - Increased data reliability - Improved overall system efficiency
Commercial Applications: Title: "Enhanced Memory Access Technology for Improved Data Retention" This technology could be utilized in various commercial applications such as: - Consumer electronics - Data centers - Automotive systems
Questions about Enhanced Memory Access Technology: 1. How does the threshold voltage offset table improve memory access? The threshold voltage offset table helps optimize the read level voltage for better performance and reliability in memory devices.
2. What are the potential benefits of using a modified read level voltage in memory operations? Using a modified read level voltage can lead to improved data retention, faster read speeds, and overall enhanced memory performance.
Original Abstract Submitted
a block of a memory device is identified. a threshold voltage offset corresponding to a wordline associated with the block is identified based on a threshold voltage offset table. the threshold voltage offset table corresponds to at least one of: a value of a media state metric associated with the block, a wordline group of the wordline, or a difference between the wordline and a boundary wordline of the block. a read operations is performed on the block using a read level voltage modified by the threshold voltage offset, wherein the read level voltage is associated with the block.
