Micron technology, inc. (20240311042). ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR WORDLINES AT CORNER TEMPERATURES IN A MEMORY SUB-SYSTEM simplified abstract
Contents
- 1 ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR WORDLINES AT CORNER TEMPERATURES IN A MEMORY SUB-SYSTEM
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR WORDLINES AT CORNER TEMPERATURES IN A MEMORY SUB-SYSTEM - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Adaptive Memory Access Systems
- 1.13 Original Abstract Submitted
ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR WORDLINES AT CORNER TEMPERATURES IN A MEMORY SUB-SYSTEM
Organization Name
Inventor(s)
Zhenming Zhou of San Jose CA (US)
Ching-Huang Lu of Fremont CA (US)
Murong Lang of San Jose CA (US)
ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR WORDLINES AT CORNER TEMPERATURES IN A MEMORY SUB-SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240311042 titled 'ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR WORDLINES AT CORNER TEMPERATURES IN A MEMORY SUB-SYSTEM
Simplified Explanation
The patent application describes a system that can adjust memory access operations based on the temperature of the memory device.
- The system receives a request to access memory cells associated with a wordline.
- It checks if the temperature of the memory device meets a certain threshold.
- It determines the type of memory access operation needed.
- It then performs the memory access operation using a specific time sense parameter based on the operation type and temperature.
Key Features and Innovation
- Adaptive memory access operations based on temperature.
- Efficient utilization of memory resources.
- Enhanced performance and reliability of memory devices.
Potential Applications
This technology can be applied in:
- Data centers
- Mobile devices
- Embedded systems
Problems Solved
- Optimizing memory access operations for varying temperatures.
- Improving overall memory device performance.
- Reducing errors and data loss.
Benefits
- Increased efficiency and reliability of memory devices.
- Enhanced performance in different operating conditions.
- Extended lifespan of memory devices.
Commercial Applications
Title: Adaptive Memory Access System for Enhanced Performance This technology can be used in various commercial applications such as:
- Server systems
- Mobile phones
- Automotive electronics
- IoT devices
Prior Art
Readers can explore prior art related to adaptive memory access systems, temperature-based memory operations, and memory device optimization techniques.
Frequently Updated Research
Stay updated on research related to memory device optimization, temperature-aware computing, and adaptive memory access systems.
Questions about Adaptive Memory Access Systems
How does temperature affect memory access operations?
The temperature of the memory device can impact the speed and reliability of memory access operations. By adjusting parameters based on temperature, the system can optimize performance.
What are the potential benefits of adaptive memory access systems?
Adaptive memory access systems can lead to improved efficiency, reliability, and performance of memory devices, making them suitable for a wide range of applications.
Original Abstract Submitted
a system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a memory access operation on a set of cells associated with a wordline of the memory device; determining that a temperature associated with the memory device satisfies a threshold criterion; determining a memory access operation type of the memory access operation; and performing the memory access operation on the set of cells associated with the wordline using a first time sense parameter, wherein the first time sense parameter corresponds to the memory access operation type and the temperature associated with the memory device.
