Micron technology, inc. (20240304250). ONE-LADDER READ OF MEMORY CELLS COARSELY PROGRAMMED VIA INTERLEAVED TWO-PASS DATA PROGRAMMING TECHNIQUES simplified abstract
ONE-LADDER READ OF MEMORY CELLS COARSELY PROGRAMMED VIA INTERLEAVED TWO-PASS DATA PROGRAMMING TECHNIQUES
Organization Name
Inventor(s)
Phong Sy Nguyen of Livermore CA (US)
James Fitzpatrick of Laguna Niguel CA (US)
Kishore Kumar Muchherla of Fremont CA (US)
ONE-LADDER READ OF MEMORY CELLS COARSELY PROGRAMMED VIA INTERLEAVED TWO-PASS DATA PROGRAMMING TECHNIQUES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240304250 titled 'ONE-LADDER READ OF MEMORY CELLS COARSELY PROGRAMMED VIA INTERLEAVED TWO-PASS DATA PROGRAMMING TECHNIQUES
Simplified Explanation:
This patent application describes a memory system that can store multiple bits of data in a single memory cell by programming the threshold voltage of the cell to represent different combinations of bit values. The memory device uses a mapping between bit value combinations and threshold levels to program the cell. The threshold levels are grouped and associated with specific read voltages to enable accurate reading of the stored data.
Key Features and Innovation:
- Memory system stores multiple bits of data in a single memory cell.
- Threshold voltage of the memory cell is programmed to represent different combinations of bit values.
- Mapping between bit value combinations and threshold levels is used for programming.
- Threshold levels are grouped and associated with specific read voltages for accurate reading.
Potential Applications: This technology could be used in:
- Solid-state drives
- Non-volatile memory devices
- Embedded systems
- IoT devices
Problems Solved:
- Efficient storage of multiple bits in a single memory cell
- Accurate reading of stored data
- Improved memory system performance
Benefits:
- Increased data storage capacity
- Enhanced memory system efficiency
- Improved reliability of data storage
Commercial Applications: Potential commercial uses include:
- Memory chip manufacturing
- Data storage solutions
- Consumer electronics industry
Prior Art: Readers can explore prior art related to this technology in the field of non-volatile memory devices and memory cell programming techniques.
Frequently Updated Research: Researchers are constantly working on improving memory systems to increase data storage capacity and enhance performance.
Questions about Memory Systems: 1. How does this memory system compare to traditional memory storage methods? 2. What are the potential challenges in implementing this technology in real-world applications?
Original Abstract Submitted
a memory system to store multiple bits of data in a memory cell. a memory device coarsely programs a threshold voltage of the memory cell to a first level representative of a combination of bit values according to a mapping between bit value combinations and threshold levels. the threshold levels are partitioned into groups, each containing a subset of the threshold levels and having associated read voltages separating threshold levels in the subset. a group identification of a first group, among the groups, containing the first level is determined for the memory cell. the memory device applies read voltages of different groups, interleaved in an increasing order in a sequence, to read the memory cell when a read voltage applied is associated with the first group. the data bits read back from the memory cell are used to finely program the threshold voltage of the memory cell.
